CN112582307A - Wafer cleaning method capable of dynamically adjusting posture - Google Patents
Wafer cleaning method capable of dynamically adjusting posture Download PDFInfo
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- CN112582307A CN112582307A CN202011472568.5A CN202011472568A CN112582307A CN 112582307 A CN112582307 A CN 112582307A CN 202011472568 A CN202011472568 A CN 202011472568A CN 112582307 A CN112582307 A CN 112582307A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 219
- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000008569 process Effects 0.000 claims abstract description 12
- 235000012431 wafers Nutrition 0.000 claims description 160
- 238000005406 washing Methods 0.000 claims description 27
- 230000003247 decreasing effect Effects 0.000 claims description 5
- 239000011295 pitch Substances 0.000 claims 1
- 230000001680 brushing effect Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 8
- 238000005507 spraying Methods 0.000 abstract description 6
- 230000036544 posture Effects 0.000 abstract description 4
- 230000035484 reaction time Effects 0.000 abstract description 4
- 239000000126 substance Substances 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 5
- 239000003344 environmental pollutant Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 231100000719 pollutant Toxicity 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
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- 239000013043 chemical agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
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- 238000001035 drying Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a wafer cleaning method capable of dynamically adjusting postures, which comprises the following steps: in the wafer cleaning process, a rotating speed sensor is used for acquiring the rotating speed of the wafer and detecting whether the rotating speed belongs to a normal range; and if the rotating speed does not belong to the normal range, adjusting the included angle between the two cleaning brushes according to the rotating speed. The invention realizes the purpose of maintaining stable rotating speed during wafer brushing, improves the consistency of the spraying of the cleaning solution and the reaction time of the cleaning solution on the surface of the wafer, and improves the cleaning effect.
Description
Technical Field
The invention belongs to the technical field of cleaning after chemical mechanical polishing, and particularly relates to a wafer cleaning method capable of dynamically adjusting the posture.
Background
Chemical Mechanical Polishing (CMP) is a globally planarizing ultra-precise surface processing technique. Since the chemical agents and abrasives used in the chemical mechanical polishing process are in large quantities, a large amount of contaminants such as abrasive particles and abrasive byproducts remain on the wafer surface after the polishing process is completed, and the contaminants adversely affect the subsequent process and may cause the wafer yield loss. Since the cleanliness of the wafer surface is one of the important factors affecting the reliability of the semiconductor device, in order to achieve the purpose of being contaminant-free, the contaminants on the wafer surface need to be removed to prevent the contaminants from being re-remained on the wafer surface before the process. Therefore, in the wafer manufacturing process, it is necessary to perform surface cleaning many times to remove contaminants such as metal ions, atoms, organic substances, and particles attached to the wafer surface.
The wafer cleaning method includes roller brush cleaning, megasonic cleaning, and the like, wherein the roller brush cleaning is widely applied. The method comprises the steps of separating pollutants on the surface of the wafer into the cleaning liquid by using a mechanical action, and dissolving the pollutants into the cleaning liquid by using a chemical reaction between the cleaning liquid and the pollutants on the surface of the wafer, so that the pollutants are removed from the surface of the wafer. Patent CN102768974B discloses a wafer cleaning apparatus. The wafer cleaning equipment comprises: a frame; the wafer cleaning device is arranged on the rack; the wafer brushing device is arranged on the rack and is positioned at the downstream side of the wafer cleaning device; the wafer drying device is arranged on the rack and is positioned on the downstream side of the wafer brushing device; and the mechanical arm is movably arranged on the rack and used for vertically clamping the wafer and carrying the wafer.
However, in the prior art, the problem of unstable rotation speed during wafer brushing exists, which affects the spraying consistency of the cleaning solution, so that the reaction time of the cleaning solution on the surface of the wafer is inconsistent, and finally the cleaning effect is affected.
Disclosure of Invention
The embodiment of the invention provides a wafer cleaning method capable of dynamically adjusting an attitude, and aims to at least solve one of the technical problems in the prior art.
The embodiment of the invention provides a wafer cleaning method capable of dynamically adjusting postures, which comprises the following steps:
in the wafer cleaning process, a rotating speed sensor is used for acquiring the rotating speed of the wafer and detecting whether the rotating speed belongs to a normal range;
and if the rotating speed does not belong to the normal range, adjusting the included angle between the two cleaning brushes according to the rotating speed.
In one embodiment, adjusting the included angle between the two washing brushes according to the rotation speed comprises:
when the rotating speed is lower, the included angle between the two cleaning brushes is increased so as to increase the friction torque of the cleaning brushes on the wafer;
when the rotating speed is higher than the set rotating speed, the included angle between the two cleaning brushes is reduced so as to reduce the friction torque of the cleaning brushes on the wafer.
In one embodiment, the manner of adjusting the included angle between the two washing brushes comprises: and fixing the distance between the same ends of the two cleaning brushes, and increasing or decreasing the distance between the other ends of the two cleaning brushes.
In one embodiment, the manner of adjusting the included angle between the two washing brushes comprises: the distance between the two washing brushes is adjusted simultaneously according to the same or opposite trend.
In one embodiment, the normal range of rotation speed is 40rpm to 60 rpm.
In one embodiment, the included angle is controlled to keep the difference between the distances between the two ends of the two washing brushes between 0.1mm and 0.5 mm.
In one embodiment, the wafer cleaning method further includes:
recording the accumulated operation amount of the cleaning brush, wherein the accumulated operation amount of the cleaning brush is the accumulated operation time length of the cleaning brush or the accumulated number of wafers brushed by the cleaning brush;
and when the accumulated operation amount of the cleaning brush reaches a preset amount, adjusting a set value of the clamping stroke of the cleaning brush, wherein the set value of the clamping stroke of the cleaning brush is the distance from the starting position to the wafer clamping position of the preset cleaning brush.
In one embodiment, the preset amount is determined by the consumable type of the washing brush.
In one embodiment, the wafer cleaning method further includes: and recording the wafer rotating speed of the cleaning brush at different running amounts, and setting the running amount of the cleaning brush at the moment as a preset amount when the wafer rotating speed reaches a critical value.
In one embodiment, the wafer cleaning method further includes: and controlling the cleaning brush to move to the wafer clamping position according to the set value of the cleaning brush clamping stroke, and executing the wafer cleaning process.
The embodiment of the invention has the beneficial effects that: the wafer cleaning device has the advantages that the rotating speed is kept stable during wafer cleaning, the spraying of cleaning liquid and the consistency of the reaction time of the cleaning liquid on the surface of the wafer are improved, and the cleaning effect is improved.
Drawings
The advantages of the invention will become clearer and more readily appreciated from the detailed description given with reference to the following drawings, which are given by way of illustration only and do not limit the scope of protection of the invention, wherein:
FIG. 1 is a schematic structural diagram of a wafer cleaning apparatus according to an embodiment of the present invention;
FIG. 2 is a flow chart illustrating a wafer cleaning operation according to one embodiment of the present invention;
fig. 3 is a schematic diagram of a cleaning process according to an embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail with reference to the following embodiments and accompanying drawings. The embodiments described herein are specific embodiments of the present invention for the purpose of illustrating the concepts of the invention; the description is intended to be illustrative and exemplary and should not be taken to limit the scope of the invention. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification thereof, and these technical solutions include technical solutions which make any obvious replacement or modification of the embodiments described herein. It should be understood that, unless otherwise specified, the following description of the embodiments of the present invention is made for the convenience of understanding, and the description is made in a natural state where relevant devices, apparatuses, components, etc. are originally at rest and no external control signals and driving forces are given.
Further, it is also noted that terms used herein such as front, back, up, down, left, right, top, bottom, front, back, horizontal, vertical, and the like, to denote orientation, are used merely for convenience of description to facilitate understanding of relative positions or orientations, and are not intended to limit the orientation of any device or structure.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
In the present application, Chemical Mechanical Polishing (Chemical Mechanical Polishing) is also referred to as Chemical Mechanical Planarization (Chemical Mechanical Planarization). The substrate (also called wafer) is equivalent in meaning and function to the actual wafer.
Fig. 1 is a schematic structural diagram of a dynamically attitude-adjustable wafer cleaning apparatus 1 according to an embodiment of the present invention, where the wafer cleaning apparatus 1 includes a base 10, a wafer rotation assembly 20, two cleaning brushes 30, a cleaning brush movement mechanism, and a controller (not shown).
As shown in fig. 1, a wafer rotating assembly 20 is disposed at an upper portion of the pedestal 10, and a wafer W to be cleaned is supported by the wafer rotating assembly 20 and rotates about an axis of the wafer W.
The wafer rotating assembly 20 comprises a fixing seat, a pair of driving rollers and driven rollers, wherein the driving rollers and the driven rollers are provided with clamping grooves for supporting wafers, and the clamping grooves are arranged around the outer peripheral sides of the rollers. The driving roller and the driven roller are arranged on the fixing seat, and the clamping grooves are located in the same plane. Driven running roller set up in the middle part of fixing base, initiative running roller symmetry sets up in driven running roller's both sides. The pair of driving rollers and the driven rollers are arranged along the outline of the outer edge of the wafer, the wafer W placed on the wafer rotating assembly 20 is limited by the clamping groove, and the outer edge of the wafer is tangent to the bottom surface of the clamping groove. The driving roller is provided with a driving motor, and the driving motor drives the driving roller to rotate. The friction between the outer edge of the wafer and the roller drives the wafer to rotate around the axis of the wafer.
In one embodiment, a rotation speed sensor for detecting the rotation speed of the wafer is arranged on the driving roller, and the rotation speed sensor can be realized by a hall sensor or a photoelectric switch sensor.
As shown in fig. 1, the washing brush 30 has a cylindrical structure, and is made of a material having good water absorbency, such as polyvinyl alcohol. The two cleaning brushes 30 are a first cleaning brush and a second cleaning brush, respectively, and are respectively disposed on both sides of the wafer W to be cleaned, and can roll around their own axes to contact the surface of the wafer W to be cleaned.
As shown in fig. 1, the cleaning brush movement mechanism is configured to drive the two cleaning brushes to move oppositely and clamp the wafer at a certain included angle for cleaning. The washing brush moving mechanism includes a washing brush supporting assembly 40 and a washing brush moving assembly 50.
And a cleaning brush supporting assembly 40 for supporting the two cleaning brushes 30 positioned at both sides of the wafer W to be cleaned.
And a cleaning brush moving assembly 50 connected to the cleaning brush supporting assembly 40 to drive the entire movement of the cleaning brush supporting assembly 40 and the cleaning brush 30 thereon. The cleaning brush moving assembly 50 includes a guide rail, a lead screw and a driving member, the guide rail and the lead screw are respectively connected to the cleaning brush supporting assembly 40 to move the cleaning brush supporting assembly 40 along the guide rail under the driving of the lead screw, the driving member is disposed at the end portion of the lead screw, and the driving member drives the lead screw to move, so as to drive the cleaning brush supporting assembly 40 and the cleaning brush 30 to integrally move, so that both ends of the cleaning brush 30 are simultaneously contacted with or away from the wafer. Furthermore, the two ends of the cleaning brush are respectively provided with the screw rods, so that the moving distances of the two ends of the cleaning brush can be respectively adjusted.
The controller provided by the embodiment of the invention is used for acquiring the rotating speed of the wafer detected by the rotating speed sensor and adjusting the included angle between the two cleaning brushes when the rotating speed does not belong to the normal range.
In one embodiment of the invention, the controller comprises:
the first control module is used for increasing the included angle between the two cleaning brushes so as to increase the friction torque of the cleaning brushes on the wafer when the rotating speed is lower;
and the second control module is used for reducing the included angle between the two cleaning brushes so as to reduce the friction torque of the cleaning brushes on the wafer when the rotating speed is higher.
In this embodiment, one end of the cleaning brush, which is in the same rotation direction as the wafer, holds the wafer tightly, that is, the end with a small pitch, and can provide a rotational driving force to the wafer during cleaning, so that when the rotation speed is relatively low, the friction torque is increased to increase the driving force. One end of the cleaning brush opposite to the rotation direction of the wafer clamps the wafer loosely, namely the end with a large space, and can apply resistance to the wafer during brushing, so that when the rotation speed is higher, the friction torque is reduced to improve the resistance. One end of the cleaning brush is clamped in the same direction as the rotation direction of the wafer, and the wafer is driven to rotate integrally through friction torque.
Further, the first control module and the second control module can independently or in combination move to realize the increase or decrease of the included angle, and one control is not necessarily increased, and the other control is not necessarily decreased.
In one embodiment of the present invention, the controller further comprises:
the storage module is used for recording the accumulated operation quantity of the cleaning brush, wherein the accumulated operation quantity of the cleaning brush is the accumulated operation duration of the cleaning brush or the accumulated number of wafers brushed by the cleaning brush;
and the pre-control module is used for adjusting a set value of the clamping stroke of the cleaning brush when the accumulated operation amount of the cleaning brush reaches a preset amount, wherein the set value of the clamping stroke of the cleaning brush is the preset distance for moving the cleaning brush from the initial position to the wafer clamping position.
The angle between the two washing brushes means that the two washing brushes in a washing module are not perfectly parallel but form a very small angle. For example, when the wafer rotates, the linear velocity of the wafer near the inner side of the cleaning module is upward, and the linear velocity of the wafer near the outer side of the cleaning module is downward. In this case, the distance between the outer ends of the two brushes is slightly smaller than the distance between the inner ends, that is, the distance between the first end of the first brush and the first end of the second brush is smaller than the distance between the second end of the first brush and the second end of the second brush, and the difference in the distances is preferably 0.1mm to 0.2 mm.
Referring to fig. 2, the operation of wafer cleaning will be briefly described with reference to fig. 1.
Firstly, a wafer W to be cleaned is placed on the wafer rotating assembly 20 by a manipulator, and at the moment, a certain distance is reserved between a cleaning brush 30 and the side surface of the wafer W, so that an operation space is provided for the manipulator;
secondly, the wafer W is rotated around its axis by the wafer rotation assembly 20, and a fluid spraying device (not shown) sprays a cleaning solution, such as an acidic or alkaline cleaning solution, toward the rotating wafer W;
in the third step, the two cleaning brushes 30 are rolled around the axes thereof and moved toward the position of the wafer W so that the cleaning brushes 30 are in contact with the surface of the wafer W and the first cleaning brush and the second cleaning brush are not perfectly parallel with each other with a certain angle therebetween. For example, the first end of the first cleaning brush and the first end of the second cleaning brush grip the wafer, and the second end of the first cleaning brush and the second end of the second cleaning brush slightly contact the wafer. In other words, the spacing between the first end of the first cleaning brush and the first end of the second cleaning brush is less than the spacing between the second end of the first cleaning brush and the second end of the second cleaning brush;
fourthly, the cleaning brush 30 rolls to brush the surface of the wafer W, so that pollutants on the surface of the wafer are removed, and the surface of the wafer is brushed;
fifthly, after the wafer is scrubbed, the cleaning brush 30 moves towards the outer side of the wafer W, and the cleaning brush 30 is separated from the surface of the wafer W;
sixthly, the fluid spraying device (not shown) continues to spray the cleaning fluid toward the rotating wafer W, the wafer W stops rotating after the rinsing is continued for a certain period of time, and the robot transfers the wafer W which has been cleaned to the next process.
As can be seen from the operation method of cleaning the wafer, the position of the cleaning brush 30 needs to be moved at the start stage and the end stage of the wafer cleaning. Since the distance between the brush 30 and the wafer W determines the contact state between the brush 30 and the wafer W, the contact state between the two is directly related to the wafer surface cleaning effect. Therefore, it is required to precisely control the moving distance and the angle of the two washing brushes 30.
Based on the above analysis, an embodiment of the present invention provides a wafer cleaning method capable of dynamically adjusting an attitude, including:
step S1, in the wafer cleaning process, a rotation speed sensor is used for acquiring the rotation speed of the wafer, and whether the rotation speed belongs to a normal range is detected;
and step S2, if the rotating speed does not belong to the normal range, adjusting the included angle between the two cleaning brushes according to the rotating speed.
The normal range of the rotation speed of the wafer is 40rpm to 60rpm, preferably 50rpm ± 10%. The included angle between the two washing brushes is controlled so that the difference between the distances between the two ends of the two washing brushes is maintained between 0.1mm and 0.5mm, preferably between 0.1mm and 0.2 mm. It can be understood that the difference in the interval between both ends of the two washing brushes is the difference in the interval between the first end of the first washing brush and the first end of the second washing brush and the interval between the second end of the first washing brush and the second end of the second washing brush.
Because the wafer may be overspeed or dropped during the cleaning process due to the conditions of the abrasion condition of the cleaning brush, the cleaning environment, the equipment use condition, etc., the rotating speed of the wafer cannot be kept constant, and therefore, it is necessary to solve the problem of stable rotating speed. The embodiment of the invention realizes the purpose of maintaining stable rotating speed during wafer brushing, improves the consistency of the spraying of the cleaning solution and the reaction time of the cleaning solution on the surface of the wafer, and improves the cleaning effect.
In one embodiment of the present invention, step S2 includes:
step S21, when the rotating speed is lower, increasing the included angle between the two cleaning brushes to reduce the friction of the cleaning brushes for cleaning the wafer;
and step S22, when the rotating speed is higher, reducing the included angle between the two cleaning brushes so as to improve the friction force of the cleaning brushes for cleaning the wafer.
Specifically, the following two ways are provided for adjusting the included angle.
In one embodiment, the manner of adjusting the included angle between the two washing brushes comprises: and fixing the distance between the same ends of the two cleaning brushes, and increasing or decreasing the distance between the other ends of the two cleaning brushes. For example, the distance between the first end of the first cleaning brush and the first end of the second cleaning brush is fixed, and the distance between the second end of the first cleaning brush and the second end of the second cleaning brush is increased or decreased, so that the distance can be controlled by lead screws arranged at both ends of the cleaning brush.
In another embodiment, the way of adjusting the angle between the two washing brushes comprises: the distance between the two washing brushes is adjusted simultaneously according to the same or opposite trend.
In addition, since the surface of the brush is worn as the number of times of use increases, the frictional force against the wafer is reduced as the brush is used for the same chucking stroke, resulting in deterioration of the cleaning effect. Therefore, it is also necessary to control the grip stroke of the brush.
In an embodiment of the invention, the wafer cleaning method further includes:
and step S3, recording the accumulated operation amount of the cleaning brush, wherein the accumulated operation amount of the cleaning brush is the accumulated operation time length of the cleaning brush or the accumulated number of the cleaning brush for brushing the wafer.
And step S4, when the accumulated operation amount of the cleaning brush reaches a preset amount, adjusting the set value of the clamping stroke of the cleaning brush, wherein the set value of the clamping stroke of the cleaning brush is the preset distance for moving the cleaning brush from the initial position to the wafer clamping position. For example, when the brush handles 100 wafers, the brush holding stroke setting value is adjusted so that the pitch of the two brushes is reduced but the frictional force against the wafer is kept stable.
And step S5, controlling the cleaning brush to move to the wafer clamping position according to the set value of the cleaning brush clamping stroke, and executing the wafer cleaning process.
In this embodiment, the distance that the initial cleaning brush is moved to the wafer, that is, the set value of the holding stroke of the cleaning brush, that is, the moving distance of the cleaning brush in the third step shown in fig. 2 is adjusted according to the operation condition of the cleaning brush, so that the friction force during cleaning is kept stable, and it is ensured that the cleaning effect is not deteriorated due to the time accumulation.
In the present application, the distance of the clamping movement of the two ends of each cleaning brush is controlled by the cleaning brush movement mechanism, for example, the set value of the clamping stroke of the cleaning brush is initially set to 10mm, and when the cleaning brush cleans 100 wafers, the set value is adjusted from 10mm to 10.1mm in order to keep the clamping force on the wafers consistent due to the abrasion of the cleaning brush and the like.
Preferably, in one embodiment, the preset amount in the step S4 may be determined by the consumable type of the washing brush, and the preset amount is different for the consumable type of the washing brush.
In one embodiment, the wafer rotation speed of the brush is recorded at different operation amounts, and the operation amount of the brush at this time is set to a preset amount when the wafer rotation speed reaches a threshold value.
For convenience of understanding, as shown in fig. 3, a specific application scenario is taken as an example to illustrate the wafer cleaning method provided by the embodiment of the present invention.
1) After starting, judging whether the accumulated operation amount of the cleaning brush reaches a preset amount;
2) if so, adjusting the set value of the clamping stroke of the cleaning brush, for example, reducing the distance between the cleaning brushes;
3) starting rotation of the wafer, controlling the cleaning brush to rotate and clamping the wafer according to the adjusted stroke set value;
4) judging whether brushing finishing time is reached;
5) if the brushing finish time is not reached, detecting whether the rotating speed of the wafer belongs to a normal range;
6) if so, continuing to clean and continuously detecting the rotating speed of the wafer, and if not, finely adjusting the included angle between the two cleaning brushes;
7) and if the brushing finish time is reached, driving the cleaning brush to open, and stopping rotating after the wafer is washed to finish cleaning.
In summary, the embodiment of the invention can fine tune the included angle of the cleaning brush at any time according to the change of the wafer rotation speed to maintain the stable wafer rotation speed, and can actively adjust the clamping stroke according to the operation duration of the consumable items, thereby maintaining the level with better cleaning effect and prolonging the service life of the cleaning brush.
The drawings in the present specification are schematic views to assist in explaining the concept of the present invention, and schematically show the shapes of respective portions and their mutual relationships. It should be understood that the drawings are not necessarily to scale, the same reference numerals being used to identify the same elements in the drawings in order to clearly show the structure of the elements of the embodiments of the invention.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (10)
1. A wafer cleaning method capable of dynamically adjusting the posture is characterized by comprising the following steps:
in the wafer cleaning process, a rotating speed sensor is used for acquiring the rotating speed of the wafer and detecting whether the rotating speed belongs to a normal range;
and if the rotating speed does not belong to the normal range, adjusting the included angle between the two cleaning brushes according to the rotating speed.
2. The wafer cleaning method as recited in claim 1, wherein adjusting the included angle between the two cleaning brushes according to the rotation speed comprises:
when the rotating speed is lower, the included angle between the two cleaning brushes is increased so as to increase the friction torque of the cleaning brushes on the wafer;
when the rotating speed is higher than the set rotating speed, the included angle between the two cleaning brushes is reduced so as to reduce the friction torque of the cleaning brushes on the wafer.
3. A method for cleaning a wafer as recited in claim 1, wherein adjusting the included angle between the two cleaning brushes comprises: and fixing the distance between the same ends of the two cleaning brushes, and increasing or decreasing the distance between the other ends of the two cleaning brushes.
4. A method for cleaning a wafer as recited in claim 1, wherein adjusting the included angle between the two cleaning brushes comprises: the distance between the two washing brushes is adjusted simultaneously according to the same or opposite trend.
5. The wafer cleaning method according to claim 1, wherein the normal range of the rotation speed is 40rpm to 60 rpm.
6. The wafer cleaning method according to claim 1, wherein the included angle is controlled so that the difference between the pitches of both ends of the two cleaning brushes is maintained between 0.1mm and 0.5 mm.
7. The wafer cleaning method of claim 1, further comprising: recording the accumulated operation amount of the cleaning brush, wherein the accumulated operation amount of the cleaning brush is the accumulated operation time length of the cleaning brush or the accumulated number of wafers brushed by the cleaning brush;
and when the accumulated operation amount of the cleaning brush reaches a preset amount, adjusting a set value of the clamping stroke of the cleaning brush, wherein the set value of the clamping stroke of the cleaning brush is the distance from the starting position to the wafer clamping position of the preset cleaning brush.
8. The wafer cleaning method according to claim 7, wherein the preset amount is determined by a consumable type of the cleaning brush.
9. The wafer cleaning method of claim 7, further comprising: and recording the wafer rotating speed of the cleaning brush at different running amounts, and setting the running amount of the cleaning brush at the moment as a preset amount when the wafer rotating speed reaches a critical value.
10. The wafer cleaning method of claim 7, further comprising: and controlling the cleaning brush to move to the wafer clamping position according to the set value of the cleaning brush clamping stroke, and executing the wafer cleaning process.
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| CN202011472568.5A CN112582307A (en) | 2020-12-15 | 2020-12-15 | Wafer cleaning method capable of dynamically adjusting posture |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003045235A (en) * | 2001-07-27 | 2003-02-14 | Mitsui Chemicals Inc | Anisotropy conductive paste |
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| CN102074455A (en) * | 2010-09-03 | 2011-05-25 | 清华大学 | Scrubbing device for wafer |
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