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CN112531000B - OLED display panel and manufacturing method thereof - Google Patents

OLED display panel and manufacturing method thereof Download PDF

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Publication number
CN112531000B
CN112531000B CN202011389591.8A CN202011389591A CN112531000B CN 112531000 B CN112531000 B CN 112531000B CN 202011389591 A CN202011389591 A CN 202011389591A CN 112531000 B CN112531000 B CN 112531000B
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layer
pixel
pixel defining
cavities
forming
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CN112531000A (en
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孙德瑞
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Shenzhen Zhongyoutu Technology Co ltd
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Shenzhen Zhongyoutu Technology Co ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

The invention provides an OLED display panel and a manufacturing method thereof.A sacrificial layer is utilized to pre-occupy the position in a pixel defining structure, and then the structure of the sacrificial layer is removed to obtain an air gap in the pixel defining structure, and the air gap can prevent the delamination and peeling of an organic light emitting layer and an anode layer when the display panel is bent.

Description

OLED display panel and manufacturing method thereof
Technical Field
The invention relates to the technical field of light emitting display, in particular to an OLED display panel and a manufacturing method thereof.
Background
In order to meet the requirements of different terminal structures, such as a head-mounted structure, a mobile phone, etc., an organic display panel is often required to be flexible, i.e., bendable. Since the organic light emitting layer is defined by the pixel defining layer, that is, the organic light emitting layer is tightly attached to the pixel defining layer, when bending occurs, a large bending force is generated between the pixel defining layer and the organic light emitting layer, which causes delamination and glass of the organic light emitting layer, and further, affects the quality of electrical connection of at least the anode layer of the organic light emitting layer.
Disclosure of Invention
In order to solve the above problems, the present invention provides an OLED display panel including:
a substrate;
a plurality of interlayer insulating layers disposed on the substrate;
a plurality of TFT elements disposed in the substrate;
a planarization layer disposed on the plurality of interlayer insulating layers;
a cathode layer disposed on the planarization layer;
a pixel defining structure disposed on the planarization layer, the pixel defining structure having a plurality of pixel cavities therein, the plurality of pixel cavities exposing the cathode layer;
an organic light emitting layer formed in the pixel cavities and on the cathode layer;
the anode layer is formed in the pixel cavities and positioned on the organic light-emitting layer;
wherein the pixel defining structure has air gaps therein between the plurality of pixel cavities.
Further, the pixel defining structure includes a pixel defining layer including a top surface remote from the substrate and side surfaces surrounding the plurality of pixel cavities, a spacer layer interposed between the side surfaces and the organic light emitting layer and the anode layer, and the air gap.
Further, the air gap is between the spacing layer and the side face, and the bottom of the air gap exposes the cathode layer.
Further, the pixel defining structure includes a pixel defining layer including a top surface remote from the substrate and a side surface surrounding the plurality of pixel cavities, and the air gap.
Further, the air gap is located in the pixel defining layer, and the air gap exposes the planarization layer.
The invention also provides a manufacturing method of the OLED display panel, which comprises the following steps:
(1) Providing a substrate;
(2) Forming a plurality of interlayer insulating layers including a plurality of TFT elements on the substrate;
(3) Forming a planarization layer on the plurality of interlayer insulating layers;
(4) Forming a cathode layer on the planarization layer;
(5) Forming a pixel defining structure on the planarization layer, the pixel defining structure having a plurality of pixel cavities therein, the plurality of pixel cavities exposing the cathode layer;
(6) Sequentially forming an organic light emitting layer and an anode layer on the cathode layers in the plurality of pixel cavities;
wherein the pixel defining structure has air gaps therein between the plurality of pixel cavities.
Further, forming the pixel defining structure specifically includes:
forming a pixel defining layer on the planarization layer, the pixel defining layer having the plurality of pixel cavities therein, the pixel defining layer including a top surface remote from the substrate and a side surface surrounding the plurality of pixel cavities;
forming a sacrificial layer on the side face;
covering a spacer layer on the top surface and the sacrificial layer;
sequentially forming an organic light emitting layer and an anode layer in the pixel cavities, wherein the side surfaces of the organic light emitting layer and the anode layer are in contact with the spacing layer;
removing the sacrificial layer to form the air gap between the spacer layer and the side surface, the bottom of the air gap exposing the cathode layer.
Further, forming the pixel defining structure specifically includes:
forming a sacrificial layer on the planarization layer;
covering a pixel defining layer on the sacrificial layer, the pixel defining layer having the plurality of pixel cavities therein, the pixel defining layer including a top surface remote from the substrate and side surfaces surrounding the plurality of pixel cavities;
removing the sacrificial layer to form the air gap in the pixel defining layer, the bottom of the air gap exposing the planarization layer.
Further, the sacrificial layer is made of a thermal decomposition material, and the pixel defining layer is made of an inorganic material such as silicon nitride or silicon oxide.
Further, the sacrificial layer is made of photoresist materials, and the pixel defining layer is made of polymer materials or materials such as silicon nitride and silicon oxide.
The invention uses the sacrificial layer to pre-occupy the position in the pixel defining structure, and then removes the sacrificial layer to obtain the air gap in the pixel defining structure, which can prevent the delamination and peeling of the organic light emitting layer and the anode layer when the display panel is bent.
Drawings
Fig. 1 is a sectional view of a display panel of the first embodiment;
FIGS. 2-7 are schematic views illustrating a manufacturing process of the display panel according to the first embodiment;
fig. 8 is a sectional view of a display panel of the second embodiment;
fig. 9 to 13 are schematic views illustrating a manufacturing process of the display panel according to the second embodiment.
Detailed Description
To make the objects, technical solutions and advantages of the embodiments of the present disclosure more apparent, the technical solutions of the embodiments of the present disclosure will be clearly and completely described below with reference to the drawings of the embodiments of the present disclosure. It is to be understood that the described embodiments are only a few embodiments of the present disclosure, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the disclosure without any inventive step, are within the scope of protection of the disclosure.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
First embodiment
Referring to fig. 1, the OLED display panel of the present invention includes a substrate 10. The substrate 10 may be formed of any suitable insulating material having flexibility. For example, the resin composition may be formed of a polymer material such as Polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyarylate (PAR), or glass Fiber Reinforced Plastic (FRP).
The substrate 10 includes a plurality of interlayer insulating layers 11, for example, a buffer layer, a gate insulating layer, a dielectric layer, and the like, on which a plurality of TFT elements 12 that control a plurality of pixels are provided. A planarization layer 13 is provided on the plurality of interlayer insulating layers 11, the planarization layer 13 is used to obtain a relatively flat upper surface, and the planarization layer 13 has a via structure therein to be electrically connected to the plurality of TFT elements 12.
Each of the plurality of pixels includes a cathode layer 14 electrically connected to the source or the drain of the TFT element 12, an organic light-emitting layer 20 on the cathode layer 14, and an anode layer 21 on the organic light-emitting layer 20. A cathode layer 14 is formed on the planarization layer 13 and is electrically connected to the plurality of TFT elements 12 through via holes in the planarization layer 13.
The anode layer 21 is a transparent electrode, and may be a metal oxide such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), zinc oxide (ZnO), or the like. Alternatively, the material of the cathode layer 14 may be a metal such as copper (Cu), silver (Ag), aluminum (Al), or a metal oxide such as Indium Tin Oxide (ITO), indium Zinc Oxide (IZO), or zinc oxide (ZnO), or an alloy such as aluminum fluoride/lithium (Al/LiF), or aluminum lithium (AlLi), which is not limited in the present invention.
On the planarization layer 13 there is a pixel defining structure comprising a pixel defining layer 15, a spacer layer 18 and an air gap 19. The pixel defining layer 15 is in the shape of an isosceles trapezoid in cross-section and has a top surface 17 remote from the substrate 10 and side surfaces 16 surrounding the plurality of pixel cavities. The air gap 19 is located between the spacer layer 18 and the side surface so that the air gap can release pressure when bent and ensure the integrity of the organic light emitting layer 20, and the spacer layer 18 can support the organic light emitting layer 20 and the anode layer 21.
In this embodiment, the pixel defining layer 15 should be a suitable material that matches the material of the sacrificial layer 31 (see fig. 4) that forms the air gap 19. For example, the material of the sacrificial layer 31 may be a photoresist material, which needs to be removed by etching with an etching solution, and accordingly, the material of the pixel defining layer 15 and the spacer layer 18 cannot be etched by the etching solution, such as a polymer material or a material of silicon nitride, silicon oxide, etc.; the material of the sacrificial layer 31 may be a thermal decomposition material, which is a thermal decomposition polymer material commonly used in the art, and is not exemplified here, and accordingly, the melting point of the material of the pixel defining layer 15 and the spacer layer 18 is relatively high, and may be an inorganic material such as silicon nitride or silicon oxide.
As can be seen in fig. 1, the air gaps 19 are formed only at the side surfaces 16 of the pixel defining layer 15, while the spacer layer 18 extends to the top surface 17 of said pixel defining layer 15. And the spacer layer 18 should be an insulating material, which may be the same as or different from the material of the pixel defining layer 15.
The pixel defining structure defines a plurality of pixel cavities in which a plurality of pixels are formed, and specifically, the bottom of the plurality of pixel cavities exposes the cathode layer 14, the organic light emitting layer 20 and the anode layer 21 are sequentially formed in the plurality of pixel cavities, and the organic light emitting layer 20 is located above the cathode layer 14 and has a side surface contacting the spacer layer 18, so that the organic light emitting layer 20 abuts on the spacer layer 18. And an anode layer 21 covering the organic light emitting layer 20 and extending from the position of the organic light emitting layer 20 to above the top surface of the pixel defining layer 15, and in order to protect the anode layer and prevent the delamination problem when the display panel is bent, the lowest position of the anode layer 21 should be at the top surface 17 of the pixel defining layer 15, so that a portion of the anode layer 21 climbs along the spacer layer 18.
This embodiment provides an air gap 19 in the pixel defining structure, the air gap 19 being enclosed by the cathode layer 14, the pixel defining layer 15 and the spacer layer 18, which can prevent delamination and peeling of the organic light emitting layer 20 and the anode layer 21 when the display panel is bent.
The manufacturing method of the display panel of the present embodiment is also creative, and can be seen in fig. 2-7.
First, referring to fig. 2, a substrate 10 is provided, and a plurality of interlayer insulating layers 11 are formed on the substrate 10, wherein the plurality of interlayer insulating layers 11 include a plurality of TFT elements 12.
Then, a planarization layer 13 is formed on the plurality of interlayer insulating layers 11, and a cathode layer 14 is formed on the planarization layer 13.
Referring to fig. 3, a pixel defining layer 15 is formed on the planarization layer 13, the pixel defining layer 15 having the plurality of pixel cavities 30 therein, the pixel defining layer 15 including a top surface 17 remote from the substrate and a side surface 16 surrounding the plurality of pixel cavities 30.
Then, referring to fig. 4, a sacrificial layer 31 is formed on the side face 16 of the pixel defining layer 15. It may be formed in a form of a full-face coating and then patterning. The sacrificial layer 31 may be a photoresist material or a thermally decomposable material.
Referring to fig. 5, a spacer layer 18 is covered on the top surface 17 of the pixel defining layer 15 and the sacrificial layer 31.
Referring to fig. 6, an organic light emitting layer 20 and an anode layer 21 are sequentially formed in the plurality of pixel cavities 30, and side surfaces of the organic light emitting layer 20 and the anode layer 21 contact the spacer layer 18.
Referring to fig. 7, the sacrificial layer 31 is removed to form the air gap 19 between the spacer layer 18 and the side surface 16, and the bottom of the air gap 19 exposes the cathode layer 14. The removal step may include two ways: one is that when the sacrificial layer is made of photoresist material, a through hole exposing the sacrificial layer 31 needs to be formed above the spacer layer 18 to enable etching solution to enter into the etching; secondly, when the sacrificial layer 31 is a thermal decomposition material, heating is required to decompose and remove the sacrificial layer 31.
Second embodiment
The specific structure of this embodiment is shown in fig. 8, which is basically the same as that of the first embodiment (see fig. 1), except mainly for the difference in the pixel defining structure.
In the present embodiment, the pixel defining structure includes a pixel defining layer 40 and an air gap 41 in the pixel defining layer 40. The air gap 41 is formed substantially at the center between the adjacent pixel cavities 30 and has a substantially trapezoidal shape. The air gap 41 can be designed to be larger than the caliber (cross-sectional area) of the first embodiment to absorb bending stress.
Likewise, the organic light emitting layer 20 is positioned over the cathode layer 14, which has a side in contact with the pixel defining layer 40, such that the organic light emitting layer 20 abuts on the pixel defining layer 40. And the anode layer 21 covers the organic light emitting layer 20 and extends from the position of the organic light emitting layer 20 to above the top surface of the pixel defining layer 15, and, in order to protect the anode layer 21 and prevent the delamination problem when the display panel is bent, the lowest position of the anode layer 21 should be on the top surface of the pixel defining layer 40, so that a portion of the anode layer 21 climbs along the pixel defining layer 40.
The manufacturing method of the display panel of the present embodiment is also creative, and can be specifically seen in fig. 9-13.
First, referring to fig. 9, a substrate 10 is provided, and a plurality of interlayer insulating layers 11 are formed on the substrate 10, wherein the plurality of interlayer insulating layers 11 include a plurality of TFT elements 12.
Then, a planarization layer 13 is formed on the plurality of interlayer insulating layers 11, and a cathode layer 14 is formed on the planarization layer 13.
Referring to fig. 10, a sacrificial layer 42 is formed on the flat layer 13, and the sacrificial layer 42 should be in a grid shape in a plan view and have a trapezoidal shape in a cross-sectional view. The sacrificial layer 42 may be a photoresist material or a thermally decomposable material.
Referring to fig. 11, a pixel defining layer 40 is formed on the planarization layer 13, the pixel defining layer 40 having the plurality of pixel cavities 43 therein, the pixel defining layer 40 covering the sacrificial layer 42.
Then, referring to fig. 12, the sacrificial layer 42 is removed to form the air gap 41 in the pixel defining layer 40, and the flat layer 13 is exposed at the bottom of the air gap 41. This removal step may include two ways: one is that when the sacrificial layer 42 is made of photoresist material, a through hole exposing the sacrificial layer 42 needs to be formed on the upper surface of the pixel defining layer 40 to enable the etching solution to enter into the etching; secondly, when the sacrificial layer 42 is a thermal decomposition material, heating is required to decompose and remove the sacrificial layer 42.
Referring to fig. 13, the organic light emitting layer 20 and the anode layer 21 are sequentially formed in the plurality of pixel cavities 43, and side surfaces of the organic light emitting layer 20 and the anode layer 21 contact sides of the pixel defining layer 40.
The second embodiment is to form the air gap structure first and then form the organic light emitting layer 20 and the anode layer 21, but the first embodiment is just the opposite because the spacer layer 18 of the first embodiment needs to be relied upon bilaterally to prevent it from collapsing, and the second embodiment does not need to take this into account.
The invention also provides a display screen which comprises the display panel.
The expressions "exemplary embodiment," "example," and the like, as used herein, do not refer to the same embodiment, but are provided to emphasize different particular features. However, the above examples and exemplary embodiments do not preclude their implementation in combination with features of other examples. For example, even in a case where a description of a specific example is not provided in another example, unless otherwise stated or contrary to the description in the other example, the description may be understood as an explanation relating to the other example.
The terminology used in the present invention is for the purpose of illustrating examples only and is not intended to be limiting of the invention. Unless the context clearly dictates otherwise, singular expressions include plural expressions.
While example embodiments have been shown and described, it will be apparent to those skilled in the art that modifications and changes may be made without departing from the scope of the invention as defined by the claims.

Claims (4)

1. An OLED display panel, comprising:
a substrate;
a plurality of interlayer insulating layers disposed on the substrate;
a plurality of TFT elements disposed in the substrate;
a planarization layer disposed on the plurality of interlayer insulating layers;
a cathode layer disposed on the planarization layer;
a pixel defining structure disposed on the planar layer, the pixel defining structure having a plurality of pixel cavities therein, the plurality of pixel cavities exposing the cathode layer;
an organic light emitting layer formed in the pixel cavities and on the cathode layer;
the anode layer is formed in the pixel cavities and positioned above the organic light emitting layer;
wherein the pixel defining structure has air gaps therein between the plurality of pixel cavities; the pixel defining structure includes a pixel defining layer including a top surface remote from the substrate and side surfaces surrounding the plurality of pixel cavities, a spacer layer interposed between the side surfaces and the organic light emitting layer and the anode layer, and the air gap; the air gap is between the spacing layer and the side face, and the bottom of the air gap is exposed out of the cathode layer.
2. A method of manufacturing an OLED display panel, comprising:
(1) Providing a substrate;
(2) Forming a plurality of interlayer insulating layers including a plurality of TFT elements on the substrate;
(3) Forming a planarization layer on the plurality of interlayer insulating layers;
(4) Forming a cathode layer on the planarization layer;
(5) Forming a pixel defining structure on the planarization layer, the pixel defining structure having a plurality of pixel cavities therein, the plurality of pixel cavities exposing the cathode layer;
(6) Sequentially forming an organic light emitting layer and an anode layer on the cathode layers in the plurality of pixel cavities;
wherein the pixel defining structure has air gaps therein between the plurality of pixel cavities;
forming the pixel defining structure specifically includes:
forming a pixel defining layer on the planarization layer, the pixel defining layer having the plurality of pixel cavities therein, the pixel defining layer including a top surface remote from the substrate and a side surface surrounding the plurality of pixel cavities;
forming a sacrificial layer on the side face;
covering a spacer layer on the top surface and the sacrificial layer;
sequentially forming an organic light emitting layer and an anode layer in the plurality of pixel cavities, wherein the side surfaces of the organic light emitting layer and the anode layer contact the spacing layer;
removing the sacrificial layer to form the air gap between the spacer layer and the side face, the bottom of the air gap exposing the cathode layer;
or, forming the pixel defining structure specifically includes:
forming a sacrificial layer on the planarization layer;
covering a pixel defining layer on the sacrificial layer, the pixel defining layer having the plurality of pixel cavities therein, the pixel defining layer including a top surface remote from the substrate and side surfaces surrounding the plurality of pixel cavities;
removing the sacrificial layer to form the air gap in the pixel defining layer, the bottom of the air gap exposing the planarization layer.
3. The method of manufacturing an OLED display panel according to claim 2, wherein the sacrificial layer is a thermal decomposition material, and the pixel defining layer is a silicon nitride or silicon oxide inorganic material.
4. The method of claim 2, wherein the sacrificial layer is a photoresist material and the pixel defining layer is a polymer material, silicon nitride or silicon oxide material.
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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109256408A (en) * 2017-07-06 2019-01-22 三星显示有限公司 Display device, the method and pixel for manufacturing the display device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101373435B1 (en) * 2007-03-22 2014-03-14 엘지디스플레이 주식회사 Display substrate, organic emitting diode display device having the same and method of manufacturing thereof
KR101900501B1 (en) * 2012-03-05 2018-09-20 삼성디스플레이 주식회사 Organic light emitting display device and method for manufacturing thereof
CN104037357B (en) * 2014-06-05 2016-01-27 京东方科技集团股份有限公司 A kind of organic light-emitting display device and manufacture method thereof
WO2017048478A1 (en) * 2015-09-14 2017-03-23 Cressputi Research Llc Display with embedded components
KR20170083693A (en) * 2016-01-08 2017-07-19 삼성디스플레이 주식회사 Display device and manufacturing method thereof
CN206541858U (en) * 2017-01-20 2017-10-03 京东方科技集团股份有限公司 Organic Light Emitting Diode backboard and organic LED display device
US10944074B2 (en) * 2017-12-26 2021-03-09 Sakai Display Products Corporation Organic electroluminescent display device and method for producing same
KR102802220B1 (en) * 2019-05-03 2025-05-02 삼성디스플레이 주식회사 Display apparatus and the method for the manufacturing the same
CN111403449B (en) * 2020-03-26 2024-04-23 武汉华星光电半导体显示技术有限公司 Display panel and manufacturing method thereof
CN111584590B (en) * 2020-05-22 2023-04-11 京东方科技集团股份有限公司 Display substrate, display device and manufacturing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109256408A (en) * 2017-07-06 2019-01-22 三星显示有限公司 Display device, the method and pixel for manufacturing the display device

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