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CN112505638B - Multi-channel transmitting assembly gridding pulse modulation circuit - Google Patents

Multi-channel transmitting assembly gridding pulse modulation circuit Download PDF

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Publication number
CN112505638B
CN112505638B CN202011153467.1A CN202011153467A CN112505638B CN 112505638 B CN112505638 B CN 112505638B CN 202011153467 A CN202011153467 A CN 202011153467A CN 112505638 B CN112505638 B CN 112505638B
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China
Prior art keywords
drain voltage
grid
modulator
voltage
power supply
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CN202011153467.1A
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CN112505638A (en
Inventor
石成云
王立
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Beijing Institute of Radio Measurement
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Beijing Institute of Radio Measurement
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01SRADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/02Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
    • G01S7/28Details of pulse systems
    • G01S7/282Transmitters
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B1/0483Transmitters with multiple parallel paths
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B2001/0491Circuits with frequency synthesizers, frequency converters or modulators

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Signal Processing (AREA)
  • Amplifiers (AREA)

Abstract

One embodiment of the application discloses a multi-channel transmitting assembly gridding pulse modulation circuit, which comprises: the grid voltage modulators are M, the drain voltage modulators are N, and the power amplifiers are arranged in an array manner; the grid-type power amplifier has the advantages that the grid power supply control of the grid electrode of the power amplifier is increased, grid-type cross modulation is carried out on grid electrode and drain electrode power supply of the final-stage power amplifier, single-channel controllability can be achieved, the number of single-channel devices can be saved, the problems of miniaturization and cost of a multi-channel assembly are solved, good expandability is achieved, wiring of the multi-channel transmitting assembly is effectively reduced, cost is saved, and high integration is facilitated.

Description

Multi-channel transmitting assembly gridding pulse modulation circuit
Technical Field
The application relates to the technical field of modulation circuits, in particular to a multi-channel transmitting assembly gridding pulse modulation circuit.
Background
The phased array radar realizes the functions of ranging, angle measurement, imaging and the like by transmitting pulse power, and the transmission of the pulse power is realized by controlling each channel to perform pulse working mode on the power amplifier. On the other hand, the phased array radar array surface consists of thousands of channels, and the volume, weight and cost of a single channel directly influence the mobility and cost of the whole radar. In a traditional phased array radar transmitting channel, each channel modulates a transmitting power amplifier by carrying out power supply modulation on a drain electrode of a final power amplifier, and meanwhile, in order to meet single-channel controllability, each final power amplifier is required to be provided with a drain electrode power supply modulation circuit. On the premise of meeting the pulse power of the phased array radar, the reduction of the number of single-channel devices has become an urgent need for realizing light miniaturization and low cost of the phased array radar.
Disclosure of Invention
The application aims to provide a multi-channel transmitting assembly gridding pulse modulation circuit which solves the problems of large number of devices and high cost of the existing multi-channel assembly.
In order to achieve the above purpose, the application adopts the following technical scheme:
the application provides a multi-channel transmitting assembly gridding pulse modulation circuit, which comprises:
the grid voltage modulators are M, the drain voltage modulators are N, and the power amplifiers are arranged in an array manner;
wherein,
the gate voltage control input port of the mth gate voltage modulator is connected with the mth gate voltage control signal corresponding to the mth gate voltage modulator; the power supply input port is connected with a grid voltage power supply end common to the grid voltage modulators;
the drain voltage control input port of the nth drain voltage modulator is connected with the nth drain voltage control signal corresponding to the nth drain voltage modulator; the power supply input port is connected with a common leakage power supply end of the leakage modulator;
the grid voltage power supply port of the (m, n) th power amplifier is connected with the grid voltage output end of the corresponding m th grid voltage modulator, the drain voltage power supply port is connected with the drain voltage output end of the corresponding n drain voltage modulator, the radio frequency input end receives the radio frequency input signal corresponding to the drain voltage power supply port, and the radio frequency output end outputs a corresponding radio frequency output signal;
wherein,
m and N are natural numbers greater than or equal to 1, M is greater than or equal to 1 and less than or equal to M, and N is greater than or equal to 1 and less than or equal to N.
In one embodiment, the method of controlling the (m, n) th power amplifier to operate alone is as follows:
setting the corresponding grid voltage control signals of the mth row in a pulse working state, and setting M-1 grid voltage control signals of the rest rows in a non-working state;
and simultaneously, the corresponding drain voltage control signals of the nth row are placed in a pulse working state, and N-1 drain voltage control signals of the rest rows are placed in a non-working state.
In one embodiment, the method for controlling the simultaneous operation of m×n power amplifiers is as follows:
setting M grid voltage control signals in a pulse working state;
and simultaneously, N voltage leakage control signals are also placed in a pulse working state.
In a specific embodiment, the mth gate voltage control signal controls the mth gate voltage modulator corresponding thereto.
In a specific embodiment, the nth drain voltage control signal controls an nth drain voltage modulator corresponding to the nth drain voltage control signal.
In one embodiment, each of the gate voltage modulators controls the gate voltage supply ports of N power amplifiers connected thereto.
In one embodiment, each drain voltage modulator controls the drain voltage supply ports of M power amplifiers connected thereto.
In one embodiment, the M gate voltage modulators and the N drain voltage modulators control the m×n power amplifiers through meshing.
The beneficial effects of the application are as follows:
the grid-type power amplifier has the advantages that the grid power supply control of the grid electrode of the power amplifier is increased, grid-type cross modulation is carried out on grid electrode and drain electrode power supply of the final-stage power amplifier, single-channel controllability can be achieved, the number of single-channel devices can be saved, the problems of miniaturization and cost of a multi-channel assembly are solved, good expandability is achieved, wiring of the multi-channel transmitting assembly is effectively reduced, cost is saved, and high integration is facilitated.
Drawings
In order to more clearly illustrate the embodiments of the present application or the prior art, the drawings which are required in the description of the embodiments or the prior art will be briefly described, it being apparent that the drawings in the description below are one embodiment of the present application and that other drawings may be obtained according to the drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a schematic diagram of a multi-channel transmit assembly meshing pulse modulation circuit in accordance with one embodiment of the present application.
Fig. 2 is a schematic diagram of a single-channel operation control mode of a multi-channel transmitting component gridding pulse modulation circuit according to an embodiment of the present application.
Fig. 3 is a schematic diagram showing an operation control manner of all channels of the multi-channel transmitting component meshing pulse modulation circuit according to an embodiment of the present application.
Detailed Description
In order to make the technical scheme of the present application more clear, the present application will be further described in detail with reference to the accompanying drawings and examples. The present application will be described in detail with reference to the following examples, which are not intended to limit the scope of the application. Variations and modifications may be made by those skilled in the art without departing from the principles of the present application, and such variations and modifications may be considered to be within the scope of the present application.
Referring to fig. 1, fig. 1 shows a schematic diagram of a multi-channel transmit assembly meshing pulse modulation circuit according to one embodiment of the application.
As can be seen from fig. 1, a multi-channel transmitting assembly gridding pulse modulation circuit includes:
the grid voltage modulators are M, the drain voltage modulators are N, and the power amplifiers are arranged in an array manner;
wherein,
the gate voltage control input port of the mth gate voltage modulator is connected with the mth gate voltage control signal VG_CTRLm corresponding to the mth gate voltage modulator; the power supply input port is connected with a grid voltage power supply end VDD_VG common to the grid voltage modulators;
the drain voltage control input port of the nth drain voltage modulator is connected with the nth drain voltage control signal VD_CTRLn corresponding to the drain voltage control input port; the power supply input port is connected with a drain voltage power supply end VDD_VD common to the drain voltage modulators;
the grid voltage power supply port of the power amplifier of the nth row of the mth column (hereinafter referred to as the (m, n) th power amplifier) is connected with the grid voltage output end VGm of the mth grid voltage modulator corresponding to the grid voltage power supply port, the drain voltage power supply port is connected with the drain voltage output end VDn of the nth drain voltage modulator corresponding to the drain voltage power supply port, the radio frequency input end receives a corresponding radio frequency input signal RF_IN (m, n), and the radio frequency output end outputs a corresponding radio frequency output signal RF_OUT (m, n);
wherein,
m and N are natural numbers greater than or equal to 1, M is greater than or equal to 1 and less than or equal to M, and N is greater than or equal to 1 and less than or equal to N.
For example, in fig. 1, the gate voltage control input port of the gate voltage modulator 1 is connected to the first gate voltage control signal vg_ctrl1, and the power supply input port is connected to the gate voltage power supply terminal vdd_vg common to the gate voltage modulator;
the drain voltage control input port of the drain voltage modulator 1 is connected with a first drain voltage control signal VD_CTRL1, and the power supply input port is connected with a drain voltage power supply end VDD_VD common to the drain voltage modulator;
the grid voltage power supply port of the (1, 1) th power amplifier is connected with the grid voltage output end VG1 of the grid voltage modulator 1, and the drain voltage power supply port is connected with the drain voltage output end VD1 of the drain voltage modulator 1;
the radio frequency input terminal receives a corresponding radio frequency input signal rf_in (1, 1), and the radio frequency output terminal outputs a corresponding radio frequency output signal rf_out (1, 1). The connection of the other power amplifiers is the same.
The mth grid voltage control signal controls the mth grid voltage modulator corresponding to the mth grid voltage control signal; the nth drain voltage control signal controls the nth drain voltage modulator corresponding to the nth drain voltage control signal.
Each grid voltage modulator controls the grid voltage power supply ports of N power amplifiers connected with the grid voltage modulator; each drain voltage modulator controls the drain voltage supply ports of M power amplifiers connected with the drain voltage modulator; the M grid voltage modulators and the N drain voltage modulators control the M power amplifiers through grid.
Referring to fig. 2, fig. 2 is a schematic diagram illustrating a single-channel operation control mode of a meshed pulse modulation circuit of a multi-channel transmitting assembly according to an embodiment of the present application.
As can be seen from fig. 2, if the (M, n) th power amplifier is to be controlled to operate independently, the gate voltage control signal vg_ctrlm corresponding to the M th column is required to be set in the pulse operation state, and the gate voltage control signals of M-1 of the remaining columns are required to be set in the non-operation state;
simultaneously, the drain voltage control signal VD_CTRRn corresponding to the nth row is placed in a pulse working state, and N-1 drain voltage control signals of the rest rows are placed in a non-working state; thus, the (m, n) th power amplifier can be controlled to operate independently.
Referring to fig. 3, fig. 3 is a schematic diagram illustrating a mode of controlling operation of all channels of a meshed pulse modulation circuit of a multi-channel transmitting assembly according to an embodiment of the present application.
As can be seen from fig. 3, if m×n power amplifiers are to be controlled to operate simultaneously, M gate voltage control signals vg_ctrl1 to vg_ctrlm are required to be set in a pulse operation state;
simultaneously, N leakage voltage control signals VD_CTRL 1-VD_CTRLN are also placed in a pulse working state; thus, M.N power amplifiers can be controlled to work simultaneously.
The grid-type power amplifier has the advantages that the grid power supply control of the grid electrode of the power amplifier is increased, grid-type cross modulation is carried out on grid electrode and drain electrode power supply of the final-stage power amplifier, single-channel controllability can be achieved, the number of single-channel devices can be saved, the problems of miniaturization and cost of a multi-channel assembly are solved, good expandability is achieved, wiring of the multi-channel transmitting assembly is effectively reduced, cost is saved, and high integration is facilitated.
It should be understood that the foregoing examples of the present application are provided merely for clearly illustrating the present application and are not intended to limit the embodiments of the present application, and that various other changes and modifications may be made therein by one skilled in the art without departing from the spirit and scope of the present application as defined by the appended claims.

Claims (8)

1. A multi-channel transmit assembly gridding pulse modulation circuit, said circuit comprising:
the grid voltage modulators are M, the drain voltage modulators are N, and the power amplifiers are arranged in an array manner;
wherein,
the gate voltage control input port of the mth gate voltage modulator is connected with the mth gate voltage control signal corresponding to the mth gate voltage modulator; the power supply input port is connected with a grid voltage power supply end common to the grid voltage modulators;
the drain voltage control input port of the nth drain voltage modulator is connected with the nth drain voltage control signal corresponding to the nth drain voltage modulator; the power supply input port is connected with a common leakage power supply end of the leakage modulator;
the grid voltage power supply port of the (m, n) th power amplifier is connected with the grid voltage output end of the corresponding m th grid voltage modulator, the drain voltage power supply port is connected with the drain voltage output end of the corresponding n drain voltage modulator, the radio frequency input end receives the radio frequency input signal corresponding to the drain voltage power supply port, and the radio frequency output end outputs a corresponding radio frequency output signal;
wherein,
m and N are natural numbers greater than 1, M is greater than or equal to 1 and less than or equal to M, and N is greater than or equal to 1 and less than or equal to N.
2. A circuit according to claim 1, characterized in that the method of controlling the individual operation of the (m, n) th power amplifier is as follows:
setting the corresponding grid voltage control signals of the mth row in a pulse working state, and setting M-1 grid voltage control signals of the rest rows in a non-working state;
and simultaneously, the corresponding drain voltage control signals of the nth row are placed in a pulse working state, and N-1 drain voltage control signals of the rest rows are placed in a non-working state.
3. The circuit of claim 1 wherein the means for controlling the simultaneous operation of the M x N power amplifiers is as follows:
setting M grid voltage control signals in a pulse working state;
and simultaneously, N voltage leakage control signals are also placed in a pulse working state.
4. The circuit of claim 1, wherein the mth gate voltage control signal controls a corresponding mth gate voltage modulator.
5. The circuit of claim 1, wherein the nth drain voltage control signal controls a corresponding nth drain voltage modulator.
6. The circuit of claim 1, wherein each gate voltage modulator controls the gate voltage supply ports of N power amplifiers connected thereto.
7. The circuit of claim 1, wherein each drain voltage modulator controls drain voltage supply ports of M power amplifiers connected thereto.
8. The circuit of claim 1 wherein the M gate voltage modulators and the N drain voltage modulators control the M x N power amplifiers by meshing.
CN202011153467.1A 2020-10-26 2020-10-26 Multi-channel transmitting assembly gridding pulse modulation circuit Active CN112505638B (en)

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Citations (8)

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Publication number Priority date Publication date Assignee Title
JPH10301537A (en) * 1997-04-25 1998-11-13 Nec Corp Matrix display device
JP2017161359A (en) * 2016-03-09 2017-09-14 株式会社東芝 Antenna device and array antenna device
JP2018157486A (en) * 2017-03-21 2018-10-04 三菱電機株式会社 Gate bias voltage control arrangement and gate bias voltage control method for transmitter receiver
KR101973182B1 (en) * 2017-10-18 2019-04-26 국방과학연구소 A semiconductor device including structure in which a plurality of distributed power amplifiers are power-combined and a manufacturing method for the same
CN109995333A (en) * 2019-03-28 2019-07-09 西北核技术研究所 Method, circuit and power amplifier for improving efficiency of power amplifier overshoot suppression under excitation signal
CN110596649A (en) * 2019-09-18 2019-12-20 上海航天电子通讯设备研究所 T/R assembly
CN111258259A (en) * 2020-04-27 2020-06-09 浙江航芯源集成电路科技有限公司 Multi-channel high-integration surface-mounted TR component control chip
CN111654253A (en) * 2020-06-18 2020-09-11 上海大学 A signal acquisition and amplification circuit array

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102256069B1 (en) * 2014-09-03 2021-05-25 삼성디스플레이 주식회사 Display device and calibration method thereof
GB2551103B (en) * 2016-04-11 2022-03-23 Filtronic Broadband Ltd A method of optimising a mm wave power amplifier

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10301537A (en) * 1997-04-25 1998-11-13 Nec Corp Matrix display device
JP2017161359A (en) * 2016-03-09 2017-09-14 株式会社東芝 Antenna device and array antenna device
JP2018157486A (en) * 2017-03-21 2018-10-04 三菱電機株式会社 Gate bias voltage control arrangement and gate bias voltage control method for transmitter receiver
KR101973182B1 (en) * 2017-10-18 2019-04-26 국방과학연구소 A semiconductor device including structure in which a plurality of distributed power amplifiers are power-combined and a manufacturing method for the same
CN109995333A (en) * 2019-03-28 2019-07-09 西北核技术研究所 Method, circuit and power amplifier for improving efficiency of power amplifier overshoot suppression under excitation signal
CN110596649A (en) * 2019-09-18 2019-12-20 上海航天电子通讯设备研究所 T/R assembly
CN111258259A (en) * 2020-04-27 2020-06-09 浙江航芯源集成电路科技有限公司 Multi-channel high-integration surface-mounted TR component control chip
CN111654253A (en) * 2020-06-18 2020-09-11 上海大学 A signal acquisition and amplification circuit array

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