CN112467327B - Waveguide-coplanar waveguide transition structure based on electromagnetic band gap and back-to-back structure - Google Patents
Waveguide-coplanar waveguide transition structure based on electromagnetic band gap and back-to-back structure Download PDFInfo
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- CN112467327B CN112467327B CN202011358477.9A CN202011358477A CN112467327B CN 112467327 B CN112467327 B CN 112467327B CN 202011358477 A CN202011358477 A CN 202011358477A CN 112467327 B CN112467327 B CN 112467327B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2005—Electromagnetic photonic bandgaps [EPB], or photonic bandgaps [PBG]
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Abstract
The invention discloses a waveguide-coplanar waveguide transition structure and a back-to-back structure based on an electromagnetic band gap structure, wherein the waveguide-coplanar waveguide transition structure comprises a rectangular waveguide, an E-surface probe unit and an electromagnetic band gap unit, the input end of the rectangular waveguide is a standard rectangular waveguide port, the output end of the rectangular waveguide is coupled with the E-surface probe unit, the E surface of the rectangular waveguide is provided with the electromagnetic band gap unit, the electromagnetic band gap unit comprises an upper-layer pin assembly and a lower-layer pin assembly, an air gap is reserved between the upper-layer pin assembly and the lower-layer pin assembly, and the upper-layer pin assembly and the lower-layer pin assembly are arranged in a mutually staggered mode. Compared with the traditional electromagnetic band gap structure, the electromagnetic band gap structure has the advantages that the distance between the adjacent pins is increased under the condition that a stop band is not influenced, the high-frequency millimeter wave processing is facilitated, and the problem of energy leakage of the rectangular waveguide in the assembling process is solved.
Description
Technical Field
The invention relates to the technical field of millimeter wave communication, in particular to a waveguide-coplanar waveguide transition structure and a back-to-back structure based on an electromagnetic band gap.
Background
With the development of millimeter wave technology in modern wireless communication systems, millimeter wave hybrid integrated circuits and monolithic integrated circuits are widely used in communication, radar, guidance, and other systems. The coplanar waveguide has the advantages of small dispersion, low loss, easy manufacture, easy realization of series connection and parallel connection of passive and active devices, improvement of circuit density and the like, thereby becoming an important transmission line form in a microwave millimeter wave integrated circuit. The rectangular waveguide has the characteristics of large power capacity, small loss, no radiation loss and simple structure, and is widely applied to microwave and millimeter wave circuits and systems. At present, input and output ports of a plurality of millimeter wave test systems and devices are in waveguide forms, and the two transmission line forms are often required to be converted in microwave/millimeter wave circuits and systems, so that the transition of effective standard waveguides and coplanar waveguides is realized to become important content of microwave and millimeter wave technical research.
The traditional rectangular cavity waveguide is processed by dividing the waveguide into a front surface and a floor, and the front surface and the floor are assembled together through screws. In a millimeter wave frequency band, a little gap is left in assembly to cause electromagnetic wave leakage, so that the waveguide transmission performance is deteriorated, the electromagnetic band gap structure well overcomes the defect that air gaps are introduced in rectangular waveguide assembly and processing to cause energy leakage, and strict electric contact is not needed in processing and assembly. The traditional pin type electromagnetic band gap structure is mainly processed by a milling process, and has the advantages of shorter wavelength, smaller size, larger processing difficulty and higher cost in a high-frequency millimeter wave band. It is therefore desirable to find a low loss, easy to machine transition structure between a waveguide and a coplanar waveguide.
Disclosure of Invention
In order to solve the problem that energy is easily leaked in high-frequency processing and assembly of the conventional rectangular waveguide, the invention provides a waveguide-coplanar waveguide transition structure based on an electromagnetic band gap, which comprises a rectangular waveguide, an E-surface probe unit and an electromagnetic band gap unit, wherein the input end of the rectangular waveguide is a standard rectangular waveguide port, the output end of the rectangular waveguide is coupled with the E-surface probe unit, the E surface of the rectangular waveguide is provided with the electromagnetic band gap unit, the electromagnetic band gap unit comprises an upper-layer pin assembly and a lower-layer pin assembly, an air gap is reserved between the upper-layer pin assembly and the lower-layer pin assembly, and the upper-layer pin assembly and the lower-layer pin assembly are arranged in a staggered mode.
Technical scheme more than adopting, upper pin assembly and lower floor's pin assembly all include assembly plate and a plurality of pin, and a plurality of pins are arranged on the assembly plate, and the pin that upper pin assembly contained and the pin that lower floor's pin assembly contained crisscross setting each other, and wherein the pin that lower floor's pin assembly contained is surrounded by the pin that upper pin assembly contained.
Technical scheme more than adopting, all leave the air gap between the assembly panel that upper pin assembly contained and the assembly panel that lower floor's pin assembly contained, between the pin that upper pin assembly contained and the assembly panel that lower floor's pin assembly contained.
By adopting the technical scheme, the E-surface probe unit comprises a dielectric substrate and a probe, wherein the probe is arranged on the dielectric substrate, and the dielectric substrate penetrates through the rectangular waveguide and is parallel to the waveguide transmission direction.
By adopting the technical scheme, the probe is embedded from the center of the wide side of the rectangular waveguide to the position of one quarter of the wavelength of the short-circuit surface of the terminal.
By adopting the technical scheme, the probe is of a rectangular patch structure.
Another object of the present invention is to provide a waveguide-coplanar waveguide transition back-to-back structure based on electromagnetic bandgap, which is constructed by adding 90 degree bent waveguides to two waveguide-coplanar waveguide transition structures based on electromagnetic bandgap.
Technical scheme more than adopting, including first rectangular waveguide, second rectangular waveguide, E face probe unit and electromagnetism band gap unit, the input of first rectangular waveguide and the output of second rectangular waveguide are standard rectangular waveguide port the output of first rectangular waveguide and the input coupling of second rectangular waveguide have E face probe unit the E face of first rectangular waveguide and second rectangular waveguide is equipped with the electromagnetism band gap unit, the electromagnetism band gap unit includes upper pin assembly and lower floor's pin assembly, leave the air gap between upper pin assembly and the lower floor's pin assembly, upper pin assembly and the crisscross setting each other of lower floor's pin assembly.
Technical scheme more than adopting, upper pin assembly and lower floor's pin assembly all include assembly plate and a plurality of pin, and a plurality of pins are arranged on the assembly plate, and the pin that upper pin assembly contained and the pin that lower floor's pin assembly contained crisscross setting each other, and wherein the pin that lower floor's pin assembly contained is surrounded by the pin that upper pin assembly contained.
Technical scheme more than adopting, it is single the E face of bent waveguide is equipped with the electromagnetism band gap unit, the electromagnetism band gap unit includes upper pin assembly and lower floor's pin assembly, leave the air gap between upper pin assembly and the lower floor's pin assembly, upper pin assembly and the crisscross setting each other of lower floor's pin assembly.
The invention has the beneficial effects that: the invention has compact structure, adds the electromagnetic band gap unit at the processing and splitting position of the rectangular waveguide, can effectively prevent energy leakage caused by air gaps introduced by processing and assembling errors, does not need strict electric contact at the same time, and adopts a pin type electromagnetic band gap structure with staggered upper and lower parts compared with the traditional pin type electromagnetic band gap structure with single-side arrangement, thereby increasing the distance between adjacent pins while obtaining approximate stop band bandwidth performance, reducing the processing difficulty and being more suitable for high-frequency millimeter wave design.
Drawings
Fig. 1 is a schematic structural diagram of a waveguide-coplanar waveguide transition structure based on an electromagnetic bandgap in embodiment 1 of the present invention.
FIG. 2 is a schematic structural view of an E-plane probe unit in example 1 of the present invention.
Fig. 3 is a schematic structural view of an electromagnetic bandgap cell in embodiment 1 of the present invention.
Fig. 4 is a left side view of fig. 3.
Fig. 5 is a dispersion curve diagram of an electromagnetic bandgap cell of example 1 of the present invention.
FIG. 6 shows different air gaps in example 1 of the present inventionsThe S parameter of the lower waveguide-coplanar waveguide transition structure is shown schematically.
Fig. 7 is a schematic diagram of the reflection coefficient of a waveguide-coplanar waveguide transition structure based on an electromagnetic bandgap in an operating frequency band according to embodiment 1 of the present invention.
Fig. 8 is a schematic diagram of the transmission coefficient of a waveguide-coplanar waveguide transition structure based on an electromagnetic bandgap in an operating frequency band according to embodiment 1 of the present invention.
Fig. 9 is a structural schematic diagram of a conventional electromagnetic bandgap structure.
Fig. 10 is a dispersion plot of a conventional electromagnetic bandgap structure.
Fig. 11 is a schematic structural diagram of a waveguide-coplanar waveguide transition back-to-back structure based on electromagnetic band gap in embodiment 2 of the present invention.
Fig. 12 is a schematic diagram of the reflection coefficient of a waveguide-coplanar waveguide transition back-to-back structure based on electromagnetic bandgap in the working frequency band in embodiment 2 of the present invention.
Fig. 13 is a schematic diagram of transmission coefficients of a waveguide-coplanar waveguide transition back-to-back structure based on electromagnetic band gaps in an operating frequency band according to embodiment 2 of the present invention.
The reference numbers in the figures illustrate: 1a, a rectangular waveguide; 2a, an E-plane probe unit; 21. a dielectric substrate; 22. a probe; 3a, an electromagnetic band gap unit; 31. assembling upper-layer pins; 32. assembling lower-layer pins; 33. a pin; 34. assembling a plate;
11b, a first rectangular waveguide; 12b, a first rectangular waveguide; 13b, bending the waveguide; 2b, an E-plane probe unit; 3b, an electromagnetic bandgap cell.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
Example 1
Referring to fig. 1 and 2, embodiment 1 of the present invention provides a waveguide-coplanar waveguide transition structure based on an electromagnetic bandgap, including a rectangular waveguide 1a, an E-plane probe unit 2a, and an electromagnetic bandgap unit 3a, where the E-plane probe unit 2a is coupled to an output end of the rectangular waveguide 1a, and the electromagnetic bandgap unit 3a is disposed on an E-plane of the rectangular waveguide 1 a.
Referring to fig. 2, the E-plane probe unit 2a includes a dielectric substrate 21 and a probe 22, the probe 22 is disposed on the dielectric substrate 21, and the dielectric substrate 21 passes through the rectangular waveguide 1a and is parallel to the waveguide transmission direction. Preferably, the probe 22 is embedded from the center of the wide side of the rectangular waveguide 1a to a quarter wavelength away from the terminal short-circuit surface, at this time, the probe 22 is located at the position where the mode electric field intensity of the main mode TE10 of the rectangular waveguide 1a is maximum, and the energy of the waveguide is coupled into the coplanar waveguide through the probe 22, so as to achieve the coupling efficiency as high as possible, thereby realizing the broadband transition from the waveguide to the planar circuit. And the probe 22 is of a rectangular patch structure, has a simple structure and wide bandwidth, is easy to adjust, and does not need an impedance transformer.
Specifically, the input end of the rectangular waveguide 1a of the present invention is a standard rectangular waveguide port WR-4. The dielectric substrate 21 is made of quartz material, and preferably, the dielectric substrate 21 has a relative dielectric constant of 3.78 and a thickness of 50 microns. The dielectric substrate 21 passes through the rectangular waveguide 1a and is fixed on the test chamber to provide positioning assurance for the dielectric substrate 21.
Referring to fig. 3 and 4, the electromagnetic bandgap unit 3a of the present invention includes an upper layer pin assembly 31 and a lower layer pin assembly 32, an air gap is left between the upper layer pin assembly 31 and the lower layer pin assembly 32, and the upper layer pin assembly 31 and the lower layer pin assembly 32 are arranged in a staggered manner. Compared with the traditional pin type electromagnetic band gap structure with single-side arrangement, the electromagnetic band gap unit 3a adopts the pin type electromagnetic band gap structure with the staggered upper and lower surfaces, so that the distance between the adjacent pins 33 is increased while the approximate stop band bandwidth performance is obtained, the processing difficulty is reduced, and the electromagnetic band gap unit is more suitable for high-frequency millimeter wave design.
Specifically, as shown in fig. 3 and 4, each of the upper pin assembly 31 and the lower pin assembly 32 includes an assembly plate 34 and a plurality of pins 33, the plurality of pins 33 are arranged on the assembly plate 34, and air gaps are left between the assembly plate 34 included in the upper pin assembly 31 and the pins 33 included in the lower pin assembly 32, and between the pins 33 included in the upper pin assembly 31 and the assembly plate 34 included in the lower pin assembly 32. The pins 33 included in the upper pin assembly 31 and the pins 33 included in the lower pin assembly 32 are staggered, wherein the pins 33 included in the lower pin assembly 32 are surrounded by the pins 33 included in the upper pin assembly 31, and the stop band range covers the whole operating frequency band. The main design parameters include: pin 33 side lengthaHeight of the pin 33hUnit periodpHeight of air gaps. The dispersion characteristic of the unit period structure can be solved by simulating the single period unit with the band gap structure by using the electromagnetic simulation software HFSS, as shown in FIG. 5, the stopband range is 135-543GHz, and the electromagnetic wave cannot leak to the side in the stopband range. Also simulated in FIG. 6 are different air gap heightssS parameter of lower waveguide-coplanar waveguide transition structure, withsAt certain low frequency points, transmission coefficientsS 21And drops sharply. The tolerance of the embodiment to the air gap is within 20 mu m, strict electric contact is not needed in the processing and assembling processes, and the fault tolerance to the processing precision and the error is high.
In order to compare the electromagnetic bandgap cell of the present invention with the conventional electromagnetic bandgap structure, fig. 9 shows the conventional electromagnetic bandgap structure, i.e. the metal pins are all on one side of the metal plate, and in the case that the design parameters are consistent with the parameters of the electromagnetic bandgap cell of the present invention, the dispersion characteristic curve is as shown in fig. 10, and the stop band range is 150-507 GHz. Therefore, the up-down staggered electromagnetic band gap units have similar stop band performance to the traditional electromagnetic band gap structure, but the up-down staggered structure greatly reduces the processing difficulty, and the up-down staggered structure has the greatest advantage that the distance between adjacent pins is twice as long as that of the traditional adjacent pin pieces under the same stop band frequency range, the processing difficulty of the milling cutter is reduced, and the advantage of the high-frequency millimeter wave band is more obvious.
With reference to fig. 7 and 8, in the wide frequency band of 170-260GHz, the insertion loss of a single probe is less than 0.38dB, and the return loss is below 20 dB.
In summary, compared with the traditional electromagnetic band gap structure, the novel up-and-down staggered electromagnetic band gap unit is added on the E surface of the rectangular waveguide, and the up-and-down staggered structure of the rectangular waveguide has the advantages that under the condition that the stop band is not influenced, the distance between the adjacent pins is increased, the high-frequency millimeter wave processing is facilitated, and meanwhile, the problem of energy leakage of the rectangular waveguide in the assembling process is solved.
Example 2
Considering that a standard rectangular waveguide port is adopted in the test, the test is convenient. Therefore, embodiment 2 of the present invention provides a waveguide-coplanar waveguide transition back-to-back structure based on electromagnetic bandgap, and the structure of the waveguide-coplanar waveguide transition back-to-back structure is shown in fig. 11, where the waveguide-coplanar waveguide transition back-to-back structure is constructed by adding 90-degree bent waveguides to two waveguide-coplanar waveguide transition structures based on electromagnetic bandgap in embodiment 1.
With reference to fig. 11, the waveguide-coplanar waveguide transition back-to-back structure includes a first rectangular waveguide 11b, a second rectangular waveguide 12b, an E-plane probe unit 2b, and an electromagnetic bandgap unit 3b, where an input end of the first rectangular waveguide 11b and an output end of the second rectangular waveguide 12b are both standard rectangular waveguide ports, an E-plane probe unit is coupled to an output end of the first rectangular waveguide 11b and an input end of the second rectangular waveguide 12b, and the electromagnetic bandgap unit 3b is disposed on the E-planes of the first rectangular waveguide 11b and the second rectangular waveguide 12b, and details about the electromagnetic bandgap unit have been described in embodiment 1, and embodiment 2 of the present invention is not described herein.
The E-plane of the single curved waveguide 13b is provided with the electromagnetic bandgap unit 3b, and details about the electromagnetic bandgap unit 3b have been described in detail in embodiment 1, and embodiment 2 of the present invention is not described herein again.
Referring to fig. 12 and 13, in the frequency range of 170-260GHz, the return loss is below 15dB, and the insertion loss is less than 1 dB.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (8)
1. A waveguide-coplanar waveguide transition structure based on electromagnetic band gap is characterized in that: the electromagnetic band gap device comprises a rectangular waveguide, an E-surface probe unit and an electromagnetic band gap unit, wherein the input end of the rectangular waveguide is a standard rectangular waveguide port, the output end of the rectangular waveguide is coupled with the E-surface probe unit, the E surface of the rectangular waveguide is provided with the electromagnetic band gap unit, the electromagnetic band gap unit comprises an upper-layer pin assembly and a lower-layer pin assembly, an air gap is reserved between the upper-layer pin assembly and the lower-layer pin assembly, and the upper-layer pin assembly and the lower-layer pin assembly are arranged in a staggered mode;
the upper-layer pin assembly and the lower-layer pin assembly respectively comprise an assembly plate and a plurality of pins, the plurality of pins are arranged on the assembly plate, the pins contained in the upper-layer pin assembly and the pins contained in the lower-layer pin assembly are arranged in a staggered mode, and the pins contained in the lower-layer pin assembly are surrounded by the pins contained in the upper-layer pin assembly;
the E-surface probe unit comprises a medium substrate and a probe, wherein the probe is arranged on the medium substrate, and the medium substrate penetrates through the rectangular waveguide and is parallel to the waveguide transmission direction.
2. The electromagnetic bandgap-based waveguide-coplanar waveguide transition structure of claim 1, wherein: air gaps are reserved between the assembly plates contained in the upper-layer pin assembly and the pins contained in the lower-layer pin assembly and between the pins contained in the upper-layer pin assembly and the assembly plates contained in the lower-layer pin assembly.
3. The electromagnetic bandgap-based waveguide-coplanar waveguide transition structure of claim 1, wherein: the probe is embedded from the center of the wide side of the rectangular waveguide to the quarter wavelength of the terminal short circuit surface.
4. The electromagnetic bandgap-based waveguide-coplanar waveguide transition structure of claim 3, wherein: the probe is in a rectangular patch structure.
5. A waveguide-coplanar waveguide transition back-to-back structure based on electromagnetic band gap is characterized in that: the waveguide-coplanar waveguide transition back-to-back structure is constructed by adding 90-degree bent waveguides to the two waveguide-coplanar waveguide transition structures based on the electromagnetic band gap as claimed in any one of claims 1 to 4.
6. The electromagnetic bandgap-based waveguide-coplanar waveguide transition back-to-back structure as recited in claim 5, wherein: including first rectangular waveguide, second rectangular waveguide, E face probe unit and electromagnetism band gap unit, the input of first rectangular waveguide and the output of second rectangular waveguide are standard rectangular waveguide port the output of first rectangular waveguide and the input coupling of second rectangular waveguide have E face probe unit the E face of first rectangular waveguide and second rectangular waveguide is equipped with the electromagnetism band gap unit, the electromagnetism band gap unit includes upper pin assembly and lower floor's pin assembly, leave the air gap between upper pin assembly and the lower floor's pin assembly, upper pin assembly and lower floor's pin assembly set up in a staggered way each other.
7. The electromagnetic bandgap-based waveguide-coplanar waveguide transition back-to-back structure as recited in claim 6, wherein: the upper pin assembly and the lower pin assembly all include assembly plate and a plurality of pin, and a plurality of pin are arranged on the assembly plate, and the pin that the upper pin assembly contains and the pin that the lower pin assembly contains set up crisscross each other, and wherein the pin that the lower pin assembly contains is surrounded by the pin that the upper pin assembly contains.
8. The electromagnetic bandgap-based waveguide-coplanar waveguide transition back-to-back structure as recited in claim 5, wherein: singly curved waveguide's E face is equipped with the electromagnetism band gap unit, the electromagnetism band gap unit includes upper pin assembly and lower floor's pin assembly, leave the air gap between upper pin assembly and the lower floor's pin assembly, upper pin assembly and lower floor's pin assembly set up in a staggered way each other.
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| CN114709585B (en) * | 2022-03-31 | 2022-09-30 | 西安电子科技大学 | Based on crisscross mushroom type double-deck clearance waveguide directional coupler |
| CN116130914B (en) * | 2023-02-20 | 2024-08-20 | 北京理工大学 | A millimeter wave and terahertz monolithic circuit transition structure and implementation method thereof |
| DE102023108329A1 (en) * | 2023-03-31 | 2024-10-02 | Friedrich-Alexander-Universität Erlangen-Nürnberg, Körperschaft des öffentlichen Rechts | waveguide component |
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