CN112466750A - Etching method, micro OLED and preparation method thereof - Google Patents
Etching method, micro OLED and preparation method thereof Download PDFInfo
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- CN112466750A CN112466750A CN202011293689.3A CN202011293689A CN112466750A CN 112466750 A CN112466750 A CN 112466750A CN 202011293689 A CN202011293689 A CN 202011293689A CN 112466750 A CN112466750 A CN 112466750A
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- 238000005530 etching Methods 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000011265 semifinished product Substances 0.000 claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000151 deposition Methods 0.000 claims description 17
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000004026 adhesive bonding Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
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- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an etching method, a micro OLED and a preparation method thereof, wherein the etching method in the micro OLED production process comprises the following steps: obtaining a semi-finished product after a medium film layer is deposited on the silicon-based substrate; and putting the semi-finished product into an etching machine, introducing Cl-based gas for primary etching, and introducing F-based gas for secondary etching until the etching angle of the dielectric film layer is equal to the preset angle. The invention can reduce the angle of the etched medium and improve the color gamut and yield of the OLED.
Description
Technical Field
The invention relates to the field of micro OLED production processes, in particular to an etching method, a micro OLED and a preparation method thereof.
Background
In the OLED in the current industry, F-based gas is basically selected for medium etching, but PR (photo resist) of a medium film layer and an insulating layer is not very thick when the photoresist is yellow light with high precision, the selection of PR by the F-based gas is low, when a thick medium or a deep groove medium is etched, the photoresist is often not thick enough, the angle of the etched back angle is large, a cathode is easy to break after OLED deposition, and the etching requirement cannot be met.
Disclosure of Invention
The invention aims to provide an etching method, a micro OLED and a preparation method thereof, which can reduce the angle of an etched medium and improve the color gamut and yield of the OLED.
In order to achieve the above object, the present invention provides an etching method in a micro OLED production process, including: obtaining a semi-finished product after a medium film layer is deposited on the silicon-based substrate; and putting the semi-finished product into an etching machine, introducing Cl-based gas for primary etching, and introducing F-based gas for secondary etching until the etching angle of the dielectric film layer is equal to the preset angle.
Preferably, the method for obtaining a semi-finished product after depositing the dielectric film layer on the silicon-based substrate comprises: manufacturing a silicon-based substrate; depositing and etching an anode pattern on the silicon-based substrate; and depositing a medium pattern on the silicon-based substrate with the etched anode pattern to obtain a semi-finished product.
Preferably, the depositing and etching an anode pattern on the silicon-based substrate includes: depositing an anode structure on the surface of the silicon-based substrate, and sequentially performing gluing, exposure and development on the anode structure to obtain an anode pattern layer; and etching the anode pattern layer to obtain an anode pattern.
Preferably, the method for performing primary etching by introducing Cl-based gas includes the following steps: introducing Cl-based gas, adding upper and lower electrode radio frequency, controlling etching time, setting ICP radio frequency power, setting Bias radio frequency power and setting miller temperature.
Preferably, the method for performing the secondary etching by introducing the F-based gas includes: f-based gas is introduced, ICP radio frequency power is set, Bias power is set, and the temperature of the muller is set.
Preferably, the preset angle is configured to be 55 °.
Preferably, after the etching angle of the dielectric film layer is equal to a preset angle, the etching method in the micro-OLED production process includes: and (4) removing the photoresist of the semi-finished product after the secondary etching, cleaning and evaporating an organic film layer.
In addition, the invention provides a preparation method of the micro OLED, and the preparation method of the micro OLED adopts the etching method in the micro OLED production process.
In addition, the invention provides a micro-OLED, which is prepared by using the etching method in the micro-OLED production process.
According to the technical scheme, the method utilizes the mode of matching the primary etching and the secondary etching, can reduce the angle of the passivation layer in the aspect of micro display, protects the anode and the cathode of the OLED lap joint area from being broken, can effectively play a role in preventing crosstalk, can increase the etching angle in the semiconductor shallow trench etching, controls the angle and can control the interconnection between metals with poor ductility.
Additional features and advantages of the invention will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a flow chart illustrating the etching method in a micro OLED production process according to the present invention;
FIG. 2 is a schematic structural diagram of a semi-finished product before etching by the etching method of the present invention; and
fig. 3 is a schematic structural diagram of a semi-finished product after etching by using the etching method of the invention.
Description of the reference numerals
1 semi-finished product 2 dielectric film layer
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
In the present invention, unless otherwise specified, the directional words included in the terms such as "up, down, left, right" and the like merely represent the directions of the terms in a conventional use state or are colloquially known by those skilled in the art, and should not be construed as limiting the terms.
Fig. 1 is an etching method in a micro-OLED production process provided by the present invention, as shown in fig. 1, the etching method in the micro-OLED production process includes:
s101, obtaining a semi-finished product 1 after a dielectric film layer 2 is deposited on a silicon-based substrate, wherein the structure of the semi-finished product is shown in figure 2 and etching is not carried out; and
s102, placing the semi-finished product 1 into an AMAT P5000 etching machine, introducing Cl-based gas for primary etching, and introducing F-based gas for secondary etching until the etching angle of the dielectric film layer 2 is equal to the preset angle, wherein the structure is shown in figure 3, and the etching is finished.
The angle is adjustable when Cl-based gas is etched, the range is 40-85 degrees, and the etching characteristics of F-based gas are matched, so that the micro-display requirement can be met, and the angle formed after semiconductor shallow channel medium etching can also be met.
Preferably, the method for obtaining the semi-finished product 1 after depositing the dielectric film layer 2 on the silicon-based substrate comprises the following steps: manufacturing a silicon-based substrate; depositing and etching an anode pattern on the silicon-based substrate; and depositing a layer on the silicon-based substrate with the etched anode pattern by CVD (plasma enhanced process), and depositing a medium pattern by yellow light operation to obtain a semi-finished product 1.
Preferably, the depositing and etching an anode pattern on the silicon-based substrate includes: depositing anode structures of different metals on the surface of the Si base or SiOx of the silicon-based substrate, and sequentially performing gluing, exposure and development on the anode structures to obtain an anode pattern layer; and etching the anode pattern layer to obtain an anode pattern, wherein the etching selects a North China GSE series etching machine.
Preferably, the method for performing primary etching by introducing Cl-based gas includes the following steps: introducing Cl-based gas, adding radio frequencies of an upper electrode and a lower electrode, controlling etching time, setting ICP radio frequency power of 400W, setting Bias radio frequency power of 160W and setting the temperature of a miller to be 20 ℃. The F-based gas etch is switched towards the end of the etch.
Preferably, the method for performing the secondary etching by introducing the F-based gas includes: f-based gas is introduced, ICP radio frequency power is set to be 200W, Bias power is set to be 15W, and the temperature of the muller is set to be 20 ℃. Until the dielectric film layer 2 is slightly over-etched.
Preferably, the preset angle is configured to be 55 °, so that the micro-display insulation isolation and crosstalk prevention effects can be satisfied.
Preferably, after the etching angle of the dielectric film layer 2 is equal to a preset angle, the etching method in the micro OLED production process includes:
and (4) removing the photoresist of the semi-finished product 1 after the secondary etching and cleaning, and sending the semi-finished product to an OLED (organic light emitting diode) for evaporation and plating of a required organic film layer. The angle of the film layer after evaporation on the anode can be obviously reduced, and the cathode fracture is reduced.
In addition, the invention also provides a preparation method of the micro OLED, and the preparation method of the micro OLED adopts the etching method in the micro OLED production process.
Compared with the prior art, the preparation method of the micro OLED has the same distinguishing technical characteristics and technical effects as the etching method in the micro OLED production process, and details are not repeated here.
In addition, the invention also provides a micro OLED which is prepared by using the etching method in the micro OLED production process.
Compared with the prior art, the micro OLED has the same distinguishing technical characteristics and technical effects as the etching method in the micro OLED production process, and details are not repeated herein.
The above are merely examples of the present application and are not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (9)
1. An etching method in a micro OLED production process is characterized by comprising the following steps:
obtaining a semi-finished product after a medium film layer is deposited on the silicon-based substrate; and
and putting the semi-finished product into an etching machine, introducing Cl-based gas for primary etching, and introducing F-based gas for secondary etching until the etching angle of the dielectric film layer is equal to the preset angle.
2. The etching method in the micro-OLED production process according to claim 1, wherein the method for obtaining the semi-finished product after depositing the dielectric film layer on the silicon-based substrate comprises:
manufacturing a silicon-based substrate;
depositing and etching an anode pattern on the silicon-based substrate; and
and depositing a medium pattern on the silicon-based substrate with the etched anode pattern to obtain a semi-finished product.
3. The etching method in the micro-OLED production process according to claim 2, wherein the depositing and etching an anode pattern on the silicon-based substrate comprises:
depositing an anode structure on the surface of the silicon-based substrate, and sequentially performing gluing, exposure and development on the anode structure to obtain an anode pattern layer; and
and etching the anode pattern layer to obtain an anode pattern.
4. The etching method in the micro OLED production process according to claim 1, wherein the method for performing the primary etching by introducing the Cl-based gas comprises the following steps:
introducing Cl-based gas, adding upper and lower electrode radio frequency, controlling etching time, setting ICP radio frequency power, setting Bias radio frequency power and setting miller temperature.
5. The etching method in the micro OLED production process according to claim 1, wherein the method for performing the secondary etching by introducing the F-based gas comprises the following steps:
f-based gas is introduced, ICP radio frequency power is set, Bias power is set, and the temperature of the muller is set.
6. Etching method in a micro-OLED production process according to claim 1, characterized in that the preset angle is configured to be 55 °.
7. The etching method in the micro-OLED production process according to claim 1, wherein after the etching angle of the dielectric film layer is equal to a preset angle, the etching method in the micro-OLED production process comprises:
and (4) removing the photoresist of the semi-finished product after the secondary etching, cleaning and evaporating an organic film layer.
8. A method for manufacturing a micro-OLED, characterized in that the method for manufacturing a micro-OLED uses an etching method in a micro-OLED production process according to any one of claims 1-7.
9. A micro-OLED, characterized in that it is produced using the etching method in the micro-OLED production process according to any one of claims 1-7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011293689.3A CN112466750A (en) | 2020-11-18 | 2020-11-18 | Etching method, micro OLED and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011293689.3A CN112466750A (en) | 2020-11-18 | 2020-11-18 | Etching method, micro OLED and preparation method thereof |
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| CN112466750A true CN112466750A (en) | 2021-03-09 |
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| CN202011293689.3A Pending CN112466750A (en) | 2020-11-18 | 2020-11-18 | Etching method, micro OLED and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113363407A (en) * | 2021-06-28 | 2021-09-07 | 安徽熙泰智能科技有限公司 | Preparation method of pixel definition layer of silicon-based Micro OLED Micro-display device |
| CN115185129A (en) * | 2022-06-07 | 2022-10-14 | 深圳技术大学 | Etching method of dielectric film via hole, liquid crystal display panel and liquid crystal display |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5728608A (en) * | 1995-10-11 | 1998-03-17 | Applied Komatsu Technology, Inc. | Tapered dielectric etch in semiconductor devices |
| CN101996877A (en) * | 2009-08-14 | 2011-03-30 | 中芯国际集成电路制造(上海)有限公司 | Etching method and method for forming shallow trench isolation structure |
| CN108831831A (en) * | 2018-06-20 | 2018-11-16 | 上海华虹宏力半导体制造有限公司 | Improve the lithographic method of leakage current and the forming method of fleet plough groove isolation structure |
| CN111048571A (en) * | 2019-12-26 | 2020-04-21 | 安徽熙泰智能科技有限公司 | Preparation method of silicon-based OLED micro-display |
-
2020
- 2020-11-18 CN CN202011293689.3A patent/CN112466750A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5728608A (en) * | 1995-10-11 | 1998-03-17 | Applied Komatsu Technology, Inc. | Tapered dielectric etch in semiconductor devices |
| CN101996877A (en) * | 2009-08-14 | 2011-03-30 | 中芯国际集成电路制造(上海)有限公司 | Etching method and method for forming shallow trench isolation structure |
| CN108831831A (en) * | 2018-06-20 | 2018-11-16 | 上海华虹宏力半导体制造有限公司 | Improve the lithographic method of leakage current and the forming method of fleet plough groove isolation structure |
| CN111048571A (en) * | 2019-12-26 | 2020-04-21 | 安徽熙泰智能科技有限公司 | Preparation method of silicon-based OLED micro-display |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113363407A (en) * | 2021-06-28 | 2021-09-07 | 安徽熙泰智能科技有限公司 | Preparation method of pixel definition layer of silicon-based Micro OLED Micro-display device |
| CN115185129A (en) * | 2022-06-07 | 2022-10-14 | 深圳技术大学 | Etching method of dielectric film via hole, liquid crystal display panel and liquid crystal display |
| CN115185129B (en) * | 2022-06-07 | 2024-02-09 | 深圳技术大学 | Etching method of dielectric film via hole, liquid crystal display panel and liquid crystal display |
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Application publication date: 20210309 |