CN112447496B - Ion etching cleaning method for semiconductor - Google Patents
Ion etching cleaning method for semiconductor Download PDFInfo
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- CN112447496B CN112447496B CN201910800497.8A CN201910800497A CN112447496B CN 112447496 B CN112447496 B CN 112447496B CN 201910800497 A CN201910800497 A CN 201910800497A CN 112447496 B CN112447496 B CN 112447496B
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- ion etching
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- cleaning
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- 238000000992 sputter etching Methods 0.000 title claims abstract description 68
- 238000004140 cleaning Methods 0.000 title claims abstract description 65
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000002245 particle Substances 0.000 claims abstract description 68
- 239000007789 gas Substances 0.000 claims abstract description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052786 argon Inorganic materials 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims description 2
- 230000003631 expected effect Effects 0.000 abstract description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- -1 hydroxide ions Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
- H01L21/02049—Dry cleaning only with gaseous HF
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a semiconductor ion etching cleaning method, which comprises a first ion etching cleaning and a second ion etching cleaning; the technological parameters of the first ion etching cleaning are as follows: the pressure of the chamber is 30mT, the power is 1000W-1200W, the gas is argon or nitrogen, when argon is used, the gas flow is 600sccm, when nitrogen is used, the gas flow is 500sccm, and the time is 35-55 seconds; the technological parameters of the second ion etching cleaning are as follows: the pressure of the chamber is 20mT, the power is 1000W, the gas is oxygen or nitrogen, when oxygen is used, the gas flow is 50sccm, when nitrogen is used, the gas flow is 100-120 sccm, and the time is 60-80 seconds. According to the method, the particles with different particle diameters are gradually cleaned by adopting ion etching step by step, so that the particles on the surface of the semiconductor can be effectively removed, and the expected effect is achieved.
Description
Technical Field
The invention relates to semiconductor surface treatment, in particular to a semiconductor ion etching cleaning method.
Background
In semiconductor processing, there are typically many particles attached. Particle removal is conventionally accomplished by stripping particles from the wafer by a mixture of deionized water, hydrogen peroxide and ammonia. But due to the imbalance in particle size. The cleaning condition is difficult to meet, and the hydroxide ions have different corrosion rates under different temperature and concentration conditions, so that the control is difficult.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a semiconductor ion etching cleaning method.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: a semiconductor ion etching cleaning method comprises the following steps:
(1) Etching and cleaning by first ions;
(2) A second ion etching cleaning step;
The technological parameters of the first ion etching cleaning are as follows: the pressure of the chamber is 30mT, the power is 1000W-1200W, the gas is argon or nitrogen, when argon is used, the gas flow is 600sccm, when nitrogen is used, the gas flow is 500sccm, and the time is 35-55 seconds;
the technological parameters of the second ion etching cleaning are as follows: the pressure of the chamber is 20mT, the power is 1000W, the gas is oxygen or nitrogen, when oxygen is used, the gas flow is 50sccm, when nitrogen is used, the gas flow is 100-120 sccm, and the time is 60-80 seconds.
Generally, the main component of particles on the surface of a semiconductor is an inorganic material, and the particles are composed of silicon dioxide, and the particle size can be divided into two types, wherein the particle size of one type of particles is more than or equal to 30nm, and the particle size of the other type of particles is less than or equal to 30nm. The first ion etching mainly removes particles of 30-100nm, and the second ion etching mainly removes particles of 10-30 nm. According to the method, the particles with different particle sizes are gradually cleaned in a step-by-step manner by adopting an ion etching mode, so that the particles on the surface of the semiconductor can be effectively removed under the cleaning condition of the method, and the expected effect is achieved.
As a preferred implementation mode of the semiconductor ion etching cleaning method, when the size of the semiconductor surface particles is more than or equal to 30nm and the ratio of the semiconductor surface particles is less than or equal to 20%, the time of the first ion etching cleaning is 35 seconds;
when the size of the particles on the surface of the semiconductor is more than or equal to 30nm and the ratio of the particles is 20-50%, the time for cleaning by the first ion etching is 40 seconds;
when the size of the particles on the surface of the semiconductor is more than or equal to 30nm and the ratio of the particles is 50-70%, the time for cleaning by the first ion etching is 50 seconds;
and when the size of the particles on the surface of the semiconductor is more than or equal to 30nm and the ratio of the particles is 70-80%, the time for cleaning by the first ion etching is 55 seconds.
As a preferred implementation mode of the semiconductor ion etching cleaning method, when the ratio of the size of the particles on the surface of the semiconductor to be less than or equal to 30nm is 20-30%, the time of the second ion etching cleaning is 60 seconds;
when the size of the particles on the surface of the semiconductor is less than or equal to 30nm and the ratio of the particles is 30-50%, the second ion etching cleaning time is 65 seconds;
When the size of the particles on the surface of the semiconductor is less than or equal to 30nm and the ratio of the particles is 50-70%, the second ion etching cleaning time is 70 seconds;
and when the size of the particles on the surface of the semiconductor is less than or equal to 30nm and the ratio of the particles is 70-80%, the second ion etching cleaning time is 80 seconds.
When the particle contents of different particle sizes are different, the cleaning time needs to be changed, and the particle size range and the particle content of each particle are preferably the cleaning time, so that the cleaning effect is good, and the surface of the semiconductor is not damaged.
As a preferred implementation mode of the semiconductor ion etching cleaning method, the first ion etching cleaning method further comprises the step (1 a) of removing the oxide layer on the surface of the semiconductor by adopting ion etching cleaning, wherein the technological parameters are as follows: the chamber pressure was 5mT, the power was 300W, the gas inlet was CF 4, the gas flow was 50sccm, and the time was 5 seconds. The oxide layer on the surface of the semiconductor can be effectively cleaned by adopting the conditions.
As a preferred implementation mode of the semiconductor ion etching cleaning method, the gas used in the second ion etching cleaning is nitrogen, and the effect of the nitrogen cleaning is better than that of the oxygen.
The invention has the beneficial effects that: the invention provides a semiconductor ion etching cleaning method, which gradually cleans particles with different particle diameters in an ion etching mode step by step, and can effectively remove particles on the surface of a semiconductor under the cleaning condition of the invention so as to achieve the expected effect.
Detailed Description
For a better description of the objects, technical solutions and advantages of the present invention, the present invention will be further described with reference to the following specific examples.
Example 1
An embodiment of the method for cleaning a semiconductor by ion etching according to the present invention includes the following steps:
(1) The oxide layer on the surface of the semiconductor is removed by adopting ion etching cleaning, and the technological parameters are as follows: the pressure of the chamber is 5mT, the power is 300W, the gas is introduced into the chamber to be CF 4, the gas flow is 50sccm, and the time is 5 seconds;
(2) Ion etching is carried out on a semiconductor containing 70-80% of particles with the size more than or equal to 30nm, and the technological parameters are as follows: the pressure of the chamber is 30mT, the power is 1200W, the gas is argon, the gas flow is 600sccm, and the time is 55 seconds;
(3) Ion etching is carried out on a semiconductor containing particles with the size less than or equal to 30nm accounting for 20-30%, and the technological parameters are as follows: the chamber pressure was 20mT, the power was 1000W, the gas was oxygen, the gas flow was 50sccm, and the time was 60 seconds.
Example 2
An embodiment of the method for cleaning a semiconductor by ion etching according to the present invention includes the following steps:
(1) The oxide layer on the surface of the semiconductor is removed by adopting ion etching cleaning, and the technological parameters are as follows: the pressure of the chamber is 5mT, the power is 300W, the gas is introduced into the chamber to be CF 4, the gas flow is 50sccm, and the time is 5 seconds;
(2) Ion etching is carried out on a semiconductor containing 50-70% of particles with the size more than or equal to 30nm, and the technological parameters are as follows: the pressure of the chamber is 30mT, the power is 1000W, the gas is nitrogen, the gas flow is 500sccm, and the time is 50 seconds;
(3) Ion etching is carried out on a semiconductor containing 30-50% of particles with the size less than or equal to 30nm, and the technological parameters are as follows: the chamber pressure was 20mT, the power was 1000W, the gas was nitrogen, the gas flow was 120sccm, and the time was 65 seconds.
Example 3
An embodiment of the method for cleaning a semiconductor by ion etching according to the present invention includes the following steps:
(1) The oxide layer on the surface of the semiconductor is removed by adopting ion etching cleaning, and the technological parameters are as follows: the pressure of the chamber is 5mT, the power is 300W, the gas is introduced into the chamber to be CF 4, the gas flow is 50sccm, and the time is 5 seconds;
(2) Ion etching is carried out on a semiconductor containing particles with the size of more than or equal to 30nm accounting for 20-50%, and the technological parameters are as follows: the pressure of the chamber is 30mT, the power is 1100W, the gas is argon, the gas flow is 600sccm, and the time is 40 seconds;
(3) Ion etching is carried out on a semiconductor containing 50-80% of particles with the size less than or equal to 30nm, and the technological parameters are as follows: the chamber pressure was 20mT, the power was 1000W, the gas was nitrogen, the gas flow was 110sccm, and the time was 70 seconds.
Example 4
An embodiment of the method for cleaning a semiconductor by ion etching according to the present invention includes the following steps:
(1) The oxide layer on the surface of the semiconductor is removed by adopting ion etching cleaning, and the technological parameters are as follows: the pressure of the chamber is 5mT, the power is 300W, the gas is introduced into the chamber to be CF 4, the gas flow is 50sccm, and the time is 5 seconds;
(2) Ion etching is carried out on a semiconductor containing particles with the size of not more than 20 percent and not less than 30nm, and the technological parameters are as follows: the pressure of the chamber is 30mT, the power is 1000W, the gas is nitrogen, the gas flow is 500sccm, and the time is 35 seconds;
(3) Ion etching is carried out on a semiconductor containing particles with the size of more than or equal to 80 percent and less than or equal to 30nm, and the technological parameters are as follows: the chamber pressure was 20mT, the power was 1000W, the gas was nitrogen, the gas flow was 120sccm, and the time was 80 seconds.
The semiconductor surface particles cleaned by the semiconductor ion etching cleaning method described in embodiments 1-4 are reduced by more than 95% compared with the particles before cleaning.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention may be modified or substituted equally without departing from the spirit and scope of the technical solution of the present invention.
Claims (3)
1. The semiconductor ion etching cleaning method is characterized by comprising the following steps of:
(1) Etching and cleaning by first ions;
(2) A second ion etching cleaning step;
The technological parameters of the first ion etching cleaning are as follows: the pressure of the chamber is 30mT, the power is 1000W-1200W, the gas is argon or nitrogen, when argon is used, the gas flow is 600sccm, when nitrogen is used, the gas flow is 500sccm, and the time is 35-55 seconds;
the technological parameters of the second ion etching cleaning are as follows: the pressure of the chamber is 20mT, the power is 1000W, the gas is oxygen or nitrogen, when oxygen is used, the gas flow is 50sccm, when nitrogen is used, the gas flow is 100-120 sccm, and the time is 60-80 seconds;
when the size of the particles on the surface of the semiconductor is more than or equal to 30nm and the ratio of the particles is less than or equal to 20%, the time for cleaning by the first ion etching is 35 seconds;
when the size of the particles on the surface of the semiconductor is more than or equal to 30nm and the ratio of the particles is 20-50%, the time for cleaning by the first ion etching is 40 seconds;
when the size of the particles on the surface of the semiconductor is more than or equal to 30nm and the ratio of the particles is 50-70%, the time for cleaning by the first ion etching is 50 seconds;
When the size of the particles on the surface of the semiconductor is more than or equal to 30nm and the ratio of the particles is 70-80%, the time for cleaning by the first ion etching is 55 seconds;
when the size of the particles on the surface of the semiconductor is less than or equal to 30nm and the ratio of the particles is 20-30%, the second ion etching cleaning time is 60 seconds;
when the size of the particles on the surface of the semiconductor is less than or equal to 30nm and the ratio of the particles is 30-50%, the second ion etching cleaning time is 65 seconds;
When the size of the particles on the surface of the semiconductor is less than or equal to 30nm and the ratio of the particles is 50-70%, the second ion etching cleaning time is 70 seconds;
and when the size of the particles on the surface of the semiconductor is less than or equal to 30nm and the ratio of the particles is 70-80%, the second ion etching cleaning time is 80 seconds.
2. The method for ion etching and cleaning a semiconductor according to claim 1, wherein the first ion etching and cleaning process further comprises the step (1 a) of removing an oxide layer on the surface of the semiconductor by ion etching and cleaning, wherein the process parameters are as follows: the chamber pressure was 5mT, the power was 300W, the gas inlet was CF 4, the gas flow was 50sccm, and the time was 5 seconds.
3. The semiconductor ion etching cleaning method of claim 1, wherein the gas used for the second ion etching cleaning is nitrogen.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910800497.8A CN112447496B (en) | 2019-08-28 | 2019-08-28 | Ion etching cleaning method for semiconductor |
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| CN201910800497.8A CN112447496B (en) | 2019-08-28 | 2019-08-28 | Ion etching cleaning method for semiconductor |
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| CN112447496A CN112447496A (en) | 2021-03-05 |
| CN112447496B true CN112447496B (en) | 2024-10-18 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6144083A (en) * | 1998-06-10 | 2000-11-07 | Micron Technology, Inc. | Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby |
| JP2012256944A (en) * | 2012-09-20 | 2012-12-27 | Carl Zeiss Smt Gmbh | Method of removing contamination layer from optical surface, method of producing cleaning gas, and corresponding structure of cleaning and producing cleaning gas |
| CN103650117A (en) * | 2011-07-19 | 2014-03-19 | 东京毅力科创株式会社 | Cleaning method, processing device, and storage medium |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5328555A (en) * | 1992-11-24 | 1994-07-12 | Applied Materials, Inc. | Reducing particulate contamination during semiconductor device processing |
| KR100305506B1 (en) * | 1999-06-08 | 2001-11-14 | 황인길 | Removing methods of contamination particles produced in plasma etch process |
| KR20020000206A (en) * | 2000-06-23 | 2002-01-05 | 최승락 | Method cleaning Liquid Chrystal Display using Laser and Remote Plasma |
| CN100377308C (en) * | 2005-12-02 | 2008-03-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Particle-removing process before semiconductor etching |
| CN101483139A (en) * | 2008-01-07 | 2009-07-15 | 中芯国际集成电路制造(上海)有限公司 | Insulating medium production method capable of enhancing yield of devices |
| CN104508072A (en) * | 2012-02-15 | 2015-04-08 | 安格斯公司 | Post-CMP removal using compositions and method of use |
| JP5984424B2 (en) * | 2012-02-27 | 2016-09-06 | 国立大学法人京都大学 | Substrate cleaning method, substrate cleaning apparatus, and vacuum processing apparatus |
| CN105573068B (en) * | 2014-10-10 | 2019-11-05 | 中芯国际集成电路制造(上海)有限公司 | The reworking method of photoresist minimizing technology and photoetching process |
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- 2019-08-28 CN CN201910800497.8A patent/CN112447496B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6144083A (en) * | 1998-06-10 | 2000-11-07 | Micron Technology, Inc. | Method of reducing defects in anti-reflective coatings and semiconductor structures fabricated thereby |
| CN103650117A (en) * | 2011-07-19 | 2014-03-19 | 东京毅力科创株式会社 | Cleaning method, processing device, and storage medium |
| JP2012256944A (en) * | 2012-09-20 | 2012-12-27 | Carl Zeiss Smt Gmbh | Method of removing contamination layer from optical surface, method of producing cleaning gas, and corresponding structure of cleaning and producing cleaning gas |
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