CN112435913B - Semiconductor device and lower electrode thereof - Google Patents
Semiconductor device and lower electrode thereof Download PDFInfo
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- CN112435913B CN112435913B CN202011324753.XA CN202011324753A CN112435913B CN 112435913 B CN112435913 B CN 112435913B CN 202011324753 A CN202011324753 A CN 202011324753A CN 112435913 B CN112435913 B CN 112435913B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000001514 detection method Methods 0.000 claims abstract description 123
- 230000008093 supporting effect Effects 0.000 claims abstract description 88
- 238000009434 installation Methods 0.000 claims abstract description 14
- 238000004891 communication Methods 0.000 claims description 33
- 239000012212 insulator Substances 0.000 claims description 19
- 238000007789 sealing Methods 0.000 claims description 11
- 230000000694 effects Effects 0.000 abstract description 7
- 230000002411 adverse Effects 0.000 abstract description 6
- 238000005530 etching Methods 0.000 description 36
- 238000000034 method Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000005484 gravity Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- 230000004580 weight loss Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
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- 238000012544 monitoring process Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
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- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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Abstract
The invention discloses a semiconductor device and a lower electrode thereof, wherein the lower electrode comprises a base; the insulating piece is fixed on the base and is provided with at least three mounting through holes; at least three pressure detection supporting parts, wherein the at least three pressure detection supporting parts are installed in the at least three installation through holes in a one-to-one correspondence manner, the at least three pressure detection supporting parts are supported by the base, and the surfaces of the at least three pressure detection supporting parts are higher than the surface of the insulating piece; the pressure detection support parts are contacted with the bearing piece and are used for supporting the bearing piece and the focusing ring and detecting the pressure of the bearing piece and the focusing ring. The technical scheme can solve the problems that whether the focusing ring should be replaced or not can not be accurately known at present, so that the focusing ring with great adverse effect on the uniformity of the wafer is still used, and the yield of the wafer is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to semiconductor equipment and a lower electrode thereof.
Background
Etchers are important devices in semiconductor processing, focus rings are typically provided outside the wafer during etching of the wafer, and plasma can enter gaps between the focus rings and the wafer during etching of the wafer, thereby causing both the outer edge of the wafer and the inner edge of the focus rings to be etched. In the initial stage of the use of the focusing ring, the etching rate of the outer edge of the wafer is basically equal to the etching rate of the surface of the wafer because the focusing ring is not etched or is etched to a light degree, so that the wafer can be ensured to have higher uniformity.
However, as the service life of the focus ring increases, more and more parts are etched away from the inner side of the focus ring, resulting in larger and larger gaps between the focus ring and the wafer, and the etching rate of the outer edge of the wafer is larger than that of the surface of the wafer, which affects the overall uniformity of the wafer. At present, only the approximate time duration of the focusing ring can be deduced according to the previous data, and the uncertainty of etching is relatively large, so that the situation that the replacement time is not yet reached yet, but the focusing ring in use is etched to have a great adverse effect on the uniformity of the wafer still exists, and the yield of the wafer is reduced.
Disclosure of Invention
The invention discloses a semiconductor device and a lower electrode thereof, which are used for solving the problems that whether a focusing ring should be replaced or not can not be known accurately at present, so that the focusing ring with great adverse effect on the uniformity of a wafer is still used and the yield of the wafer is reduced.
In order to solve the problems, the invention adopts the following technical scheme:
in a first aspect, embodiments of the present invention disclose a lower electrode, comprising:
a base;
the insulating piece is fixed on the base and is provided with at least three mounting through holes;
at least three pressure detection supporting parts, wherein the at least three pressure detection supporting parts are installed in the at least three installation through holes in a one-to-one correspondence manner, the at least three pressure detection supporting parts are supported by the base, and the surfaces of the at least three pressure detection supporting parts are higher than the surface of the insulating piece;
the pressure detection support parts are contacted with the bearing piece and are used for supporting the bearing piece and the focusing ring and detecting the pressure of the bearing piece and the focusing ring.
In a second aspect, an embodiment of the present invention discloses a semiconductor device including the above-described lower electrode.
The technical scheme adopted by the invention can achieve the following beneficial effects:
the embodiment of the invention discloses a lower electrode, an insulating part of the lower electrode is fixed on a base, an installation through hole is formed in the insulating part, a bearing part and a focusing ring are supported on the base through pressure detection supporting parts, the pressure detection supporting parts are installed in the installation through holes of the insulating part in a one-to-one correspondence mode, and each pressure detection supporting part is contacted with the bearing part, so that each pressure detection supporting part can perform pressure detection work, and the sum of pressure values detected by all the pressure detection supporting parts is the pressure value of the bearing part and the focusing ring supported on the bearing part. The initial weight of the focus ring can be determined from the sum of the pressure values detected by the pressure detection support portions before the etching process. Along with the continuous progress of etching work, the weight loss of the focusing ring can be determined through the real-time pressure measured by each pressure detection supporting part, and the etching degree of the insulating ring is further judged; moreover, a threshold value can be determined according to actual conditions by a person skilled in the art, when the weight loss of the focusing ring reaches or exceeds the threshold value, a new focusing ring is replaced, so that a worker can accurately grasp the replacing time of the focusing ring, the focusing ring which can have great adverse effect on the uniformity of the wafer is replaced in time, and the yield of the wafer is improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and do not constitute a limitation on the invention. In the drawings:
FIG. 1 is a schematic illustration of a gap between a wafer and a focus ring in a non-uniform state;
FIG. 2 is a schematic diagram illustrating the assembly of a lower electrode according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of a portion of the structure of a lower electrode according to an embodiment of the present invention;
FIG. 4 is an assembly schematic diagram of a part of the structure of the lower electrode according to the embodiment of the present invention;
FIG. 5 is a schematic view of the structure of an insulator in the bottom electrode according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of an insulator in a bottom electrode according to an embodiment of the present invention;
FIG. 7 is a schematic view of a susceptor in a lower electrode according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of a susceptor in a lower electrode according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of the center of gravity of a focus ring carrying an unetched focus ring on a lower electrode in accordance with an embodiment of the present invention;
FIG. 10 is a schematic diagram of the center of gravity of a focus ring carrying an etch on a bottom electrode according to an embodiment of the present invention.
Reference numerals illustrate:
100-base, 110-inner cavity, 130-communication hole, 150-wiring groove, 170-annular groove,
200-insulating member, 210-mounting through hole,
310-pressure detecting support part, 311-detecting part, 312-mounting part,
400-carrier,
510-focus ring, 511-center of gravity, 512-etch gap, 520-wafer, 530-electrostatic chuck, 540-wire, 550-nut, 570-seal ring, 590-pressure signal processor.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The technical scheme disclosed by each embodiment of the invention is described in detail below with reference to the accompanying drawings.
As shown in fig. 2 to 10, the embodiment of the present invention discloses a lower electrode which may be applied to a semiconductor device, and includes a base 100, an insulating member 200, a carrier 400, a focus ring 510, and at least three pressure detection supports 310. It should be noted that, the focus ring 510 is separable from other components in the lower electrode, so that in case the focus ring 510 is damaged or the like and needs to be replaced, the original focus ring 510 can be detached and replaced with a new focus ring 510.
The base 100 is a mounting base of other components in the lower electrode, the base 100 may be made of hard materials such as metal, so as to ensure that the base 100 has higher structural strength and provides stable supporting function for the other components, and more specifically, the base 100 may be formed by die casting of metal aluminum. The shape of the susceptor 100 may be determined according to a specific design of the semiconductor device, alternatively, the susceptor 100 may be a cylindrical structure, the susceptor 100 being provided with an inner cavity 110, and the pressure of the inner cavity 110 being substantially equal to the atmospheric pressure.
The insulator 200 is fixed to the susceptor 100 such that the opposite sides of the insulator 200, i.e., the susceptor 100 and the carrier 400, can be maintained in an insulated state from each other, preventing the etching process of the wafer 520 at the carrier 400 from being adversely affected. The insulating member 200 may be made of an insulating material such as rubber, or the insulating member 200 may be made of an insulating material such as rubber with high hardness to ensure that the bearing member 400 can be stably supported on the base 100 through the insulating member 200 in order to ensure that the insulating member 200 has high structural strength. At least three mounting through holes 210 are provided on the insulating member 200, and the mounting through holes 210 are adapted to be fitted with the pressure detecting support portion 310 hereinafter.
During operation of the lower electrode, the focus ring 510 may be supported on the carrier 400, so that the focus ring 510 may be indirectly supported on the susceptor 100, and the focus ring 510 may promote process uniformity of the wafer 520. Accordingly, the shapes of the carrier 400 and the insulator 200 may be the same as or similar to those of the base 100, and the sizes of the carrier 400 and the insulator 200 may be the same as or similar to those of the base 100, thereby providing stable and reliable supporting effect for the focus ring 510.
Since the wafer 520 is circular, and accordingly, the focus ring 510 is generally circular, and more specifically, the carrier 400, the insulator 200, and the base 100 may be circular structures, and the carrier 400 and the base 100 may be provided with cavities, and the cavities of the carrier 400 may be provided therein with devices for fixing the wafer 520, such as the electrostatic chuck 530, and the electrostatic chuck 530 is supported on the insulator 200, so that the potential of the electrostatic chuck 530 is not disturbed by the outside.
In order to accurately determine whether the focus ring 510 should be replaced, the lower electrode according to the embodiment of the present invention further includes at least three pressure detection support portions 310, where the pressure detection support portions 310 are installed in the installation through holes 210 of the insulator 200 in a one-to-one correspondence manner, and each pressure detection support portion 310 is supported on the base 100.
Specifically, in the case where the insulator 200 has a large hardness and the mounting through holes 210 are blind holes, each of the pressure detection support portions 310 may be indirectly supported on the base 100 through the insulator 200, while in other cases, the mounting through holes 210 may be penetrated through the insulator 200 and the pressure detection support portions 310 may be directly supported on the base 100 to ensure that the pressure detection support portions 310 may provide a stable supporting effect for the carrier 400.
And, the surfaces of the at least three pressure detecting supporting parts 310 are higher than the surfaces of the insulating member 200, so that the bearing member 400 can be supported only on the pressure detecting supporting parts 310, and the insulating member 200 cannot provide a supporting effect for the bearing member 400. It should be noted that, the surface of the pressure detecting support portion 310 refers to a surface of the pressure detecting support portion 310 that can contact the carrier 400 and provide a supporting function for the carrier 400, which may be a supporting surface or, in some cases, a supporting point. The surface of the insulating member 200 refers to a surface of the insulating member 200 opposite to the carrier 400 in the supporting direction, and if the structure of the insulating member 200 is relatively special, for example, the insulating member 200 protrudes outside the carrier 400, since the surface of the portion of the insulating member 200 located outside the carrier 400 cannot provide the supporting effect to the carrier 400, the surface of the portion may be higher than the surface of the pressure detection supporting portion 310, which does not affect the supporting of the carrier 400 only on the pressure detection supporting portion 310.
Each of the pressure detecting support parts 310 is in contact with the carrier 400 to support the carrier 400 and the focus ring 510 carried on the carrier 400, and an arrangement manner of the pressure detecting support parts 310 may be determined according to an actual number of the pressure detecting support parts 310, etc., to ensure that the carrier 400 can be stably supported on the pressure detecting support parts 310. Since each pressure detecting supporting portion 310 is in contact with the carrier 400, it is ensured that the pressure detecting supporting portions 310 can provide supporting function, and each pressure detecting supporting portion 310 can detect the pressures of the carrier 400 and the focus ring.
The pressure detection support 310 may be a pressure sensor, for example, the pressure detection support 310 may be a piezoelectric sensor or a diffused silicon sensor. In addition, the pressure data detected by each pressure detecting support portion 310 may be transmitted to an upper computer or the like by wireless transmission or the like, so that a worker can acquire the weight of the carrier 400 and the focus ring 510 supported on the carrier 400 in real time.
The embodiment of the invention discloses a lower electrode, an insulating member 200 of the lower electrode is fixed on a base 100, an installation through hole 210 is arranged on the insulating member 200, a bearing member 400 and a focusing ring 510 are supported on the base 100 through pressure detection supporting parts 310, the pressure detection supporting parts 310 are installed in the installation through holes 210 of the insulating member 200 in a one-to-one correspondence manner, and each pressure detection supporting part 310 is contacted with the bearing member 400, so that each pressure detection supporting part 310 can perform pressure detection work, and the sum of pressure values detected by all the pressure detection supporting parts 310 is the pressure value of the bearing member 400 and the focusing ring 510 supported on the bearing member 400. The initial weight of the focus ring 510 may be determined from the sum of the pressure values detected by the respective pressure detection support parts 310 before the etching process. As the etching work is continuously performed, the weight loss of the focus ring 510 can be determined by the real-time pressure measured by each pressure detection support part 310, and the etching degree of the insulating ring can be further determined; moreover, a person skilled in the art can determine a threshold according to the actual situation, and when the weight loss of the focus ring 510 reaches or exceeds the threshold, the new focus ring 510 is replaced, which can ensure that the worker can grasp the replacing time of the focus ring 510 more accurately, replace the focus ring 510 that may have a great adverse effect on the uniformity of the wafer 520 in time, and improve the yield of the wafer 520.
Alternatively, the aforementioned threshold may be specifically 2%, and when the weight change of the focus ring 510 reaches or exceeds 2% of the initial weight of the focus ring 510, it may be considered that a new focus ring 510 should be replaced at this time. Of course, the actual value of the threshold may be flexibly selected when the parameters such as the processing requirements and the processing conditions are different.
As described above, the arrangement manner of the pressure detecting support portions 310 may be determined according to the actual number of the pressure detecting support portions 310, and of course, when the pressure detecting support portions 310 are arranged, it is necessary to ensure that at least one pressure detecting support portion 310 is uniformly arranged on two opposite sides of a plane passing through the center of the carrier 400. More specifically, in the case where the number of the pressure detection supporting parts 310 is three, the outer centers of the triangle formed by the connecting lines between the three pressure detection supporting parts 310 need to be within the triangle, that is, the triangle formed by the connecting lines between the three pressure detection supporting parts 310 cannot be an obtuse triangle, in which case the carrier 400 can be stably supported on the three pressure detection supporting parts 310. Preferably, the triangle formed by the connecting lines between the three pressure detection support portions 310 may be an acute triangle, and more preferably, may be an equilateral triangle.
Further, in the process of transferring the wafer into the process chamber by using a device such as a robot, there may be some Xu Pianxie positions of the wafer 520 placed on the electrostatic chuck 530 each time, that is, the relative positions between the wafer 520 and the focus ring 510 after each transfer are different due to slight errors of the robot. More specifically, as shown in fig. 1 and 10, the size of the gap between focus rings 510 at different locations of the edge of wafer 520 may be different. Based on this, the degree to which the focus ring 510 is etched at different locations on the inner side surface during etching is also different. While the total weight of the focus ring 510 may remain within the weight range that does not require replacement as the etching operation continues, the degree of etching at a location on the focus ring 510 may be significant and the formation of the etch gap 512 may have a significant impact on the uniformity of the wafer 520.
Further, the lower electrode disclosed in the embodiment of the invention can also determine to a certain extent whether the focus ring 510 has uneven distribution of the etched portion. In detail, before etching, the pressure detection value of each pressure detection support portion 310 may be recorded in advance, and as the etching operation is continued, the pressure detection value of each pressure detection support portion 310 is recorded again after a period of time passes, and by comparing the pressure variation amounts of each pressure detection support portion 310 before and after the etching operation, it may be determined to a certain extent whether the focus ring 510 is uniformly etched.
Taking the number of the pressure detection supporting parts 310 as three as an example, the pressure value detected by each pressure detection supporting part 310 is the weight of the parts on the two opposite sides of the pressure detection supporting part, and whether the focus ring 510 has serious local etching problem can be determined by comparing the pressure variation of each pressure detection supporting part 310 before and after etching and according to the installation position of the pressure detection supporting part 310.
In order to further precisely focus the weight loss position of the ring 510, alternatively, the number of the pressure detection support parts 310 may be n, n be 4 or more, and n be an even number, that is, the number of the pressure detection support parts 310 is four, six, eight, or the like. Meanwhile, the plurality of pressure detection support parts 310 are arranged in groups of two, and two pressure detection support parts 310 in any one group are symmetrically arranged with respect to a plane passing through the center of the carrier 400. In the above embodiment, the carrier 400 and the focusing ring 510 are made of uniform materials, for example, if the carrier 400 and the focusing ring 510 are both circular structures, the center of the carrier 400 is the center of the carrier 400 and is also the center of gravity of the carrier 400. It should be noted that, in the two symmetrically arranged pressure detecting support portions 310 in each group, the symmetrically arranged structure may be a supporting point (or an equivalent supporting point) on the two pressure detecting support portions 310, or may be a supporting surface of the two pressure detecting support portions 310.
Specifically, taking the number of the pressure detecting supporting parts 310 as four as an example, the four pressure detecting supporting parts 310 are divided into two groups, namely a first group and a second group, the two pressure detecting supporting parts 310 in the first group are symmetrically arranged on two opposite sides of a first plane passing through the center of the carrier 400, and correspondingly, the two pressure detecting supporting parts 310 in the second group are symmetrically arranged on two opposite sides of a second plane passing through the center of the carrier 400, and the first plane and the second plane are not coplanar. In this case, by comparing the respective pressure variation amounts of the two pressure detecting support portions 310 in the first group, it is possible to obtain whether there is a serious local etching problem in the portion of the carrier 400 where the two pressure detecting support portions 310 in the first group are located, that is, in the two pressure detecting support portions 310 in the first group or the second group, if the difference between the pressure variation amount before and after etching of one pressure detecting support portion 310 and the pressure variation amount before and after etching of the other pressure detecting support portion 310 is large, it is indicated that there is a serious local etching condition of the focus ring 510, specifically, the position where the serious etching is the region or the periphery where the pressure detecting support portion 310 with the largest variation amount before and after etching is located. The foregoing difference may also be determined according to practical situations, and the difference may specifically be 1%, where when the difference between the pressure variation amounts of the two pressure detecting support portions 310 in the same group reaches or exceeds 1%, it is considered that the local etching condition of the focus ring 510 will have an influence on the uniformity of the wafer 520, and a new focus ring 510 may be replaced.
Accordingly, the same is true in the case where the number of the pressure detection support portions 310 is six, eight, or more. Also, in the case where the number of groups of the pressure detection support parts 310 is greater, by monitoring the pressure detection support parts 310 in pairs, it is possible to more precisely determine the position of the focus ring 510 where the serious etching occurs, so that it is possible to more rapidly and more precisely find that the focus ring 510 has a problem of serious local etching.
Further, the supporting points of the plurality of pressure detecting supporting portions 310 are located in the same plane, and of course, if the pressure detecting supporting portions 310 and the carrier 400 are in a surface contact manner, the supporting surfaces of the plurality of pressure detecting supporting portions 310 may be located in the same plane. Meanwhile, the plurality of pressure detection support portions 310 may be uniformly disposed. For example, in the case where the number of the pressure detection support portions 310 is four, the angle of the line between any adjacent two of the pressure detection support portions 310 and the center may be set to 90 °, and in the case where the number of the pressure detection support portions 310 is six, the angle of the line between any adjacent two of the pressure detection support portions 310 and the center may be set to 60 °.
When the technical scheme is adopted, under the condition that the focusing ring 510 is not etched and is supported on the plurality of pressure detection supporting parts 310, as shown in fig. 9, the gravity center 511 of the focusing ring 510 is basically positioned at the center of the circular focusing ring 510, so that the pressure values detected by each pressure detection supporting part 310 are equal or basically equal, and as the etching work continues, an etching notch 512 is etched at a certain position on the focusing ring 510, so that the gravity center 511 of the focusing ring 510 is deviated, and by adopting the technical scheme, the situation that the focusing ring 510 is etched can be found more easily by monitoring the pressure values of each pressure detection supporting part 310; accordingly, once the difference between the pressure values of the two pressure detection supporting portions 310 disposed on two opposite sides of the focus ring 510 is larger, a worker can also find that the focus ring 510 has serious local etching rapidly, and timely replace the focus ring 510, so as to ensure that the processing of the wafer 520 has higher uniformity.
Of course, since the pressure detection support portion 310 itself has a certain size, it is necessary to space any two adjacent pressure detection support portions 310 from each other in the process of laying out the pressure detection support portions 310, and in this case, it is possible to prevent the accuracy of pressure detection from being affected by the contact between the adjacent pressure detection support portions 310. More specifically, the number of the pressure detection support parts 310 is six, so that the amount of modification work of the lower electrode and the amount of installation work of the pressure detection support parts 310 are relatively small, and the difficulty of installation and design of the pressure detection support parts 310 can be reduced. The six pressure detecting support portions 310 can better provide a pressure detecting function, so that a worker can quickly learn that the focus ring 510 is severely etched, and meanwhile, by detecting the difference value of the pressure variation amounts of the two pressure detecting support portions 310 in each group, whether the focus ring 510 is severely etched locally or not can be accurately obtained.
As described above, the pressure detection support portion 310 may be directly mounted on the base 100 or may be indirectly mounted on the base 100. Preferably, the base 100 may be provided with a communication hole 130, the installation through hole 210 is provided through the insulating member 200, the communication hole 130 is communicated with the installation through hole 210, and a projection of the communication hole 130 along the supporting direction is located in the installation through hole 210, so that the pressure detection supporting portion 310 can pass through the insulating member 200 from one side of the insulating member 200 and extend into the communication hole 130, and in the case of adopting the above technical scheme, the supporting direction between the carrier 400 and the pressure detection supporting portion 310 can be parallel to the supporting direction between the pressure detection supporting portion 310 and the base 100, which makes the supporting effect provided by the base 100 for the pressure detection supporting portion 310 relatively good, and can prevent the pressure detection supporting portion 310 from influencing the pressure measurement accuracy due to the skew. The size and shape of the communication hole 130 may be correspondingly determined according to the shape and size of the pressure detection support portion 310, which is not limited herein. In addition, the number of the communication holes 130 may be plural, and the plurality of pressure detection support portions 310 may be installed in the plurality of communication holes 130 in one-to-one correspondence.
Specifically, the pressure detecting support portion 310 may be fixedly connected to the base 100 by means of a connector such as a clamp or a buckle, so as to provide a stable supporting effect for the carrier 400 and the focus ring 510. Of course, the pressure detecting support portion 310 may be directly supported on the bottom wall of the communication hole 130, which also ensures that the pressure detecting support portion 310 can be brought into a stable fixed connection relationship with the base 100.
As described above, the shapes of the mounting through hole 210 and the communication hole 130 may be correspondingly selected according to the actual structure and size of the pressure detection support part 310, alternatively, the pressure detection support part 310 includes the detection part 311 and the mounting part 312, the detection part 311 and the mounting part 312 are fixedly connected, the detection part 311 is accommodated in the mounting through hole 210, and the detection part 311 is used to provide the pressure detection function. The surface of the detection portion 311 is higher than the surface of the insulator 200. The mounting portion 312 extends into the communication hole 130 and is fixedly coupled with the base 100. Similarly, the mounting portion 312 may be fixedly attached to the base 100 by clamping or clipping, or the like, or the mounting portion 312 may be directly supported and fixed to the bottom wall of the communication hole 130.
Wherein the diameter of the detecting portion 311 is larger than the diameter of the mounting portion 312, the diameter of the mounting through hole 210 is larger than the diameter of the communication hole 130, and the detecting portion 311 is supported on the base 100. In the case of adopting the above technical solution, not only the mounting portion 312 may provide a fixing effect for the detecting portion 311, but also the detecting portion 311 may be directly supported on the surface of the base 100 facing the insulator 200, which may further improve the mounting stability of the detecting portion 311, thereby improving the stability of the supporting effect provided by the pressure detecting supporting portion 310 for the carrier 400 and the focus ring 510.
In another embodiment of the present invention, the mounting portion 312 is provided with external threads, the communication hole 130 is provided with a nut 550 therein, and the mounting portion 312 may be fixedly coupled with the nut 550 by threads. With the above technical solution, the fixing connection between the mounting portion 312 and the base 100 is easy to implement. Moreover, as the service life of the lower electrode increases, the contact relationship between the carrier 400 and the plurality of pressure detection support portions 310 may change slightly, so that a certain pressure detection support portion 310 may not form a stable contact support relationship with the carrier 400, and by mounting the mounting portion 312 on the base 100 according to the above technical solution, if a certain pressure detection support portion 310 cannot form a stable contact relationship with the carrier 400, the height of the detection portion 311 connected to the mounting portion 312 may be adjusted by screwing the mounting portion 312, so that each pressure detection support portion 310 may form a reliable contact relationship with the carrier 400, thereby ensuring that the carrier 410 may be stably supported on the base 100, and ensuring that the pressure value detected by each pressure detection support portion 310 has a high precision, thereby providing a precise guiding function for whether to replace the focus ring 510.
As described above, the plurality of pressure detection supports 310 may be connected to the pressure signal processor 590, and the pressure signal processor 590 may be disposed outside the base 100; the mounting hole 210 may be a blind hole or a through hole. Further, a hole may be provided at the outer side of the insulator 200 and communicate with the mounting through hole 210, so that the wire 540 may be introduced through the hole, the wire 540 may be connected to the pressure detection support part 310, and data detected by the pressure detection support part 310 may be transmitted. Specifically, the other end of the wire 540 may be connected to the pressure signal processor 590 or an upper computer, etc.
In order to ensure that the insulating member 200 has high structural strength, in another embodiment of the present invention, the pressure signal processor 590 may be optionally disposed in the inner cavity 110 of the base 100, so that only the mounting through hole 210 is formed on the insulating member 200, and no other holes for threading or the like are required to be formed on the insulating member 200, so that the insulating member 200 can be ensured to have high structural strength.
Based on the above embodiment, optionally, the base 100 may further be provided with a wiring groove 150, the wiring groove 150 is disposed below the communication hole 130, and the communication hole 130 communicates with the inner cavity 110 of the base 100 through the wiring groove 150. In the case where the number of the communication holes 130 is plural, the wiring groove 150 may be an annular groove, or a plurality of wiring grooves 150 may be provided on the base 100. The size of the wire slot 150 may be determined according to the actual situation of the wire 540, one end of the wire 540 may be connected to the pressure signal processor 590 disposed in the inner cavity 110 of the base 100, and the other end of the wire 540 extends into the communication hole 130 through the wire slot 150 to be connected to the pressure detection support portion 310, so that the wire 540 of each pressure detection support portion 310 can be electrically connected to the pressure signal processor 590 through the wire slot 150 for performing digital-to-analog signal conversion. In the case of the pressure signal processor 590, the pressure signal processor 590 may determine and analyze the real-time pressure detection results of the plurality of pressure detection support parts 310, and of course, the pressure signal processor 590 may be connected to an upper computer, so as to determine whether the focus ring 510 needs to be replaced according to the pressure detection values of the plurality of pressure detection support parts 310.
Generally, during the etching process of the wafer 520, the air pressure in the inner chamber 110 of the susceptor 100 is atmospheric pressure, and the outside of the susceptor 100 is in a vacuum or near-vacuum state, so that the pressure detection support portion 310 and the inner wall of the communication hole 130 may be bonded to each other in order to prevent the air in the inner chamber 110 of the susceptor 100 from leaking out of the susceptor 100 and affecting the normal etching process. Further, glue or the like may be poured therebetween, so that, on the one hand, a sealing effect may be provided for the communication hole 130, and, on the other hand, the firmness of the fixed relationship between the pressure detecting support portion 310 and the base 100 may be further stabilized.
In order to provide the base 100 with high sealing performance, the detecting portion 311 may be further attached to the surface of the base 100 facing the insulator 200, so as to further ensure that the inner cavity 110 of the base 100 and the outside of the base 100 are not mutually communicated through the communication hole 130 and the connection slot 150. Alternatively, a gasket made of a flexible material such as foam may be provided on a surface of the detection portion 311 facing the base 100, and the gasket may be pressed by a connection relationship between the mounting portion 312 and the nut 550, so as to further improve the sealing performance of the base 100.
More specifically, the annular groove 170 may be disposed on the surface of the base 100 facing the insulator 200, the outer diameter of the annular groove 170 is larger than the diameter of the communication hole 130 and smaller than the diameter of the mounting portion 312, the sealing ring 570 is disposed in the annular groove 170, the sealing ring 570 may be made of rubber or other materials, in the process of assembling the lower electrode, the detecting portion 311 presses the sealing ring 570, so that the sealing ring 570 has a tendency of recovering deformation, a gap between the detecting portion 311 and the base 100 is sealed, the base 100 is ensured to have a higher sealing performance, and the gas in the inner cavity 110 of the base 100 is prevented from leaking to affect the normal etching operation.
Based on the lower electrode disclosed in any one of the embodiments, the embodiment of the invention also discloses a semiconductor device, which comprises the lower electrode disclosed in any one of the embodiments.
The foregoing embodiments of the present invention mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The foregoing is merely exemplary of the present invention and is not intended to limit the present invention. Various modifications and variations of the present invention will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are to be included in the scope of the claims of the present invention.
Claims (10)
1. A lower electrode, comprising:
a base (100);
an insulating member (200), the insulating member (200) being fixed to the base (100), the insulating member (200) being provided with at least three mounting through holes (210);
at least three pressure detection supporting parts (310), at least three of the pressure detection supporting parts (310) are installed in at least three of the installation through holes (210) in a one-to-one correspondence manner, the at least three pressure detection supporting parts (310) are all supported by the base (100), and the surfaces of the at least three pressure detection supporting parts (310) are all higher than the surface of the insulator (200);
the device comprises a bearing piece (400) and a focusing ring (510) borne on the bearing piece (400), wherein the supporting points of a plurality of pressure detection supporting parts (310) are positioned in the same plane, and each pressure detection supporting part (310) is contacted with the bearing piece (400) and is used for supporting the bearing piece (400) and the focusing ring (510) and detecting the pressure of the bearing piece (400) and the focusing ring (510).
2. The bottom electrode according to claim 1, wherein the number of the pressure detection support portions (310) is n, n is 4 or more, and n is an even number; the plurality of pressure detection supporting parts (310) are arranged in pairs, and two pressure detection supporting parts (310) in any group are symmetrically arranged with respect to a plane passing through the center of the carrier (400).
3. The bottom electrode according to claim 2, wherein a plurality of the pressure detection support portions (310) are provided uniformly and at intervals.
4. A lower electrode according to claim 3, wherein the number of pressure detection supports (310) is six.
5. The bottom electrode according to claim 1, wherein the base (100) is provided with a communication hole (130), the communication hole (130) is in communication with the mounting through hole (210), and a projection of the communication hole (130) along a supporting direction is located in the mounting through hole (210), one end of the pressure detection support portion (310) facing away from the carrier (400) extends into the communication hole (130), and the pressure detection support portion (310) is fixedly connected with the base (100).
6. The bottom electrode according to claim 5, wherein the pressure detecting support portion (310) includes a detecting portion (311) and a mounting portion (312) fixedly connected, the detecting portion (311) is accommodated in the mounting through hole (210), a surface of the detecting portion (311) is higher than a surface of the insulating member (200), the mounting portion (312) extends into the communication hole (130) and is fixedly connected with the base (100), wherein a diameter of the detecting portion (311) is larger than a diameter of the mounting portion (312), a diameter of the mounting through hole (210) is larger than a diameter of the communication hole (130), and the detecting portion (311) is supported on the base (100).
7. The bottom electrode according to claim 6, wherein the mounting portion (312) is provided with an external thread, a nut (550) is provided in the communication hole (130), and the mounting portion (312) and the nut (550) are threaded and fixedly connected.
8. The bottom electrode of claim 6, further comprising a pressure signal processor (590), the pressure signal processor (590) disposed in the interior cavity (110) of the base (100);
the base (100) is further provided with a wiring groove (150), the wiring groove (150) is located below the communication hole (130), the communication hole (130) is communicated with the inner cavity (110) of the base (100) through the wiring groove (150), and the wires (540) of the pressure detection supporting parts (310) are electrically connected with the pressure signal processor (590) through the wiring groove (150).
9. The bottom electrode according to claim 8, wherein the surface of the base (100) facing the insulator (200) is further provided with an annular groove (170), the outer diameter of the annular groove (170) is larger than the diameter of the communication hole (130) and smaller than the diameter of the mounting portion (312), a sealing ring (570) is provided in the annular groove (170), and the detecting portion (311) is in sealing connection with the base (100) through the sealing ring (570).
10. A semiconductor device comprising the lower electrode of any one of claims 1-9.
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| CN113192876B (en) * | 2021-04-30 | 2024-07-23 | 北京北方华创微电子装备有限公司 | Semiconductor device and bearing device thereof |
| CN114373665B (en) * | 2021-12-22 | 2025-03-07 | 江苏鲁汶仪器股份有限公司 | An ion beam etching system with endpoint detection function |
| CN115799145A (en) * | 2022-12-28 | 2023-03-14 | 上海鼎泰匠芯科技有限公司 | Calibration jig, calibration system and calibration method |
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| WO2016041519A1 (en) * | 2014-09-19 | 2016-03-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bearing apparatus and semiconductor processing device |
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| US7582491B2 (en) * | 2006-10-27 | 2009-09-01 | Tokyo Electron Limited | Method for diagnosing electrostatic chuck, vacuum processing apparatus, and storage medium |
| WO2018183243A1 (en) * | 2017-03-31 | 2018-10-04 | Mattson Technology, Inc. | Pedestal assembly for plasma processing apparatus |
| JP7145041B2 (en) * | 2018-11-08 | 2022-09-30 | 東京エレクトロン株式会社 | Substrate support, plasma processing apparatus, and focus ring |
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| JP2002305188A (en) * | 1993-12-22 | 2002-10-18 | Tokyo Electron Ltd | Apparatus and method for processing |
| KR20110077575A (en) * | 2009-12-30 | 2011-07-07 | 주식회사 탑 엔지니어링 | Focus ring of plasma processing apparatus and plasma processing apparatus having same |
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