CN112397997A - Semiconductor laser and manufacturing method thereof - Google Patents
Semiconductor laser and manufacturing method thereof Download PDFInfo
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- CN112397997A CN112397997A CN202011278124.8A CN202011278124A CN112397997A CN 112397997 A CN112397997 A CN 112397997A CN 202011278124 A CN202011278124 A CN 202011278124A CN 112397997 A CN112397997 A CN 112397997A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 121
- 239000000203 mixture Substances 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 24
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 15
- 230000003287 optical effect Effects 0.000 abstract description 11
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- 238000002347 injection Methods 0.000 description 5
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- 238000005520 cutting process Methods 0.000 description 2
- 230000007123 defense Effects 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000012994 industrial processing Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004372 laser cladding Methods 0.000 description 2
- 238000007648 laser printing Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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Abstract
The invention provides a semiconductor laser and a manufacturing method thereof, wherein the number of quantum wells included In the semiconductor laser is increased, the In component of an InGaAs well layer In an ith quantum well layer is set to be larger than that of the InGaAs well layer In an i +1 th quantum well layer, the refractive index of the InGaAs well layer is increased along with the increase of the In component, the optical field of the semiconductor laser can be further limited, the position of a light emitting point of the semiconductor laser is enabled to be deviated to the side of a substrate, and the divergence angle of the semiconductor laser is effectively reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a semiconductor laser and a manufacturing method thereof.
Background
In recent years, semiconductor lasers have been widely and profoundly used in the fields of military, industrial processing, precision measurement, laser medical treatment, optical communication, optical storage, laser printing, and the like, due to their characteristics of high conversion efficiency, small size, light weight, long life, high reliability, direct modulation, easy integration with other semiconductor devices, and the like. The high-power semiconductor laser has the characteristic of high output power, and is rapidly developed in the industrial fields of metal cutting, laser cladding, deep fusion welding and the like, and the fields of aerospace, national defense and military application and the like.
Disclosure of Invention
In view of this, the present invention provides a semiconductor laser and a method for manufacturing the same, which can limit an optical field of the semiconductor laser while increasing the number of quantum wells included in the semiconductor laser, so that a light emitting point of the semiconductor laser is biased to a substrate side, and a divergence angle of the semiconductor laser is effectively reduced.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a semiconductor laser comprising:
the light-emitting diode comprises a substrate, an N-type DBR (distributed Bragg Reflector) layer, a light-emitting epitaxial structure, an oxide layer and a P-type DBR layer, wherein the substrate, the N-type DBR layer, the light-emitting epitaxial structure, the oxide layer and the P-type DBR layer are sequentially arranged in a stacking mode in a first direction;
wherein the In composition of the InGaAs well layer In the i-th quantum well layer is greater than the In composition of the InGaAs well layer In the i + 1-th quantum well layer, N is an integer greater than or equal to 2, and i is an integer greater than or equal to 1 and less than N.
Optionally, N is 3, wherein the light emitting epitaxial structure includes a first waveguide layer, a first quantum well layer, a second waveguide layer, a first P-type layer, a first N-type layer, an N-type waveguide layer, a second quantum well layer, an AlGaAs layer, a second P-type layer, a second N-type layer, a third quantum well layer, and a P-type waveguide layer, which are sequentially arranged in the first direction.
Optionally, the first quantum well includes a GaAs barrier layer, the second quantum well layer includes an AlGaAs barrier layer, and the third quantum well layer includes an inalgas barrier layer.
Optionally, the Al component of the AlGaAs barrier layer is greater than 0.05 and less than 0.25.
Optionally, the first waveguide layer is a first AlGaAs waveguide layer, and the Al composition of the first AlGaAs waveguide layer is greater than 0.2 and less than 0.6;
the second waveguide layer is a second AlGaAs waveguide layer, and the Al component of the second AlGaAs waveguide layer is more than 0.1 and less than 0.6;
the first P type layer is a first P type AlGaAs layer, the Al component of the first P type AlGaAs layer is more than 0.1 and less than 0.6, the doping source of the first P type AlGaAs layer is Mg or C, the doping concentration of the first P type AlGaAs layer is 5E19-2E20 including end points, and the V/III ratio of the first P type AlGaAs layer is 10-500 including end points;
the first N-type layer is a first N-type AlGaAs layer, the Al component of the first N-type AlGaAs layer is more than 0 and less than 0.6, the doping source of the first N-type AlGaAs layer is Si or Te, the doping concentration of the first N-type AlGaAs layer is 1E18-5E19 including end points, and the V/III ratio of the first N-type AlGaAs layer is 10-500 including end points;
the N-type waveguide layer is an N-type AlGaAs waveguide layer, and the Al component of the N-type AlGaAs waveguide layer is more than 0.2 and less than 0.6;
the Al component of the AlGaAs layer is more than 0.05 and less than 0.25;
the second P-type layer is a second P-type AlGaAs layer, the Al component of the second P-type AlGaAs layer is more than 0.05 and less than 0.25, the doping source of the second P-type AlGaAs layer is Mg or C, the doping concentration of the second P-type AlGaAs layer is 5E19-2E20, inclusive, and the V/III ratio of the second P-type AlGaAs layer is 10-500, inclusive;
the second N-type layer is a second N-type AlGaAs layer, the Al component of the second N-type AlGaAs layer is more than 00.5 and less than 0.25, the doping source of the second N-type AlGaAs layer is Si or Te, the doping concentration of the second N-type AlGaAs layer is 1E18-5E19, inclusive, and the V/III ratio of the second N-type AlGaAs layer is 10-500, inclusive;
the P-type waveguide layer is a P-type AlGaAs waveguide layer, and the Al component of the P-type AlGaAs waveguide layer is more than 0.2 and less than 0.6.
Optionally, the semiconductor laser further includes a buffer layer between the substrate and the N-type DBR mirror layer.
Optionally, the buffer layer is a GaAs buffer layer.
Optionally, the semiconductor laser further includes a P-type AlGaAs layer located on a side of the P-type DBR mirror layer facing away from the substrate.
Optionally, the semiconductor laser further includes a P-type GaAs layer located on a side of the P-type AlGaAs layer facing away from the substrate.
Correspondingly, the invention also provides a manufacturing method of the semiconductor laser, which comprises the following steps:
providing a substrate;
forming an N-type DBR mirror layer, a light-emitting epitaxial structure, an oxide layer and a P-type DBR mirror layer which are sequentially overlapped in a first direction on the substrate, wherein the light-emitting epitaxial structure comprises a first quantum well layer to an N-th quantum well layer which are sequentially arranged in the first direction, and any one of the first quantum well layer to the N-th quantum well layer comprises an InGaAs well layer; wherein the In composition of the InGaAs well layer In the i-th quantum well layer is greater than the In composition of the InGaAs well layer In the i + 1-th quantum well layer, N is an integer greater than or equal to 2, and i is an integer greater than or equal to 1 and less than N.
Compared with the prior art, the technical scheme provided by the invention at least has the following advantages:
the invention provides a semiconductor laser and a manufacturing method thereof, comprising the following steps: the light-emitting diode comprises a substrate, an N-type DBR (distributed Bragg Reflector) layer, a light-emitting epitaxial structure, an oxide layer and a P-type DBR layer, wherein the substrate, the N-type DBR layer, the light-emitting epitaxial structure, the oxide layer and the P-type DBR layer are sequentially arranged in a stacking mode in a first direction; wherein the In composition of the InGaAs well layer In the i-th quantum well layer is greater than the In composition of the InGaAs well layer In the i + 1-th quantum well layer, N is an integer greater than or equal to 2, and i is an integer greater than or equal to 1 and less than N.
As can be seen from the above, according to the technical scheme provided by the present invention, while the number of quantum wells included In the semiconductor laser is increased, the In component of the InGaAs well layer In the i-th quantum well layer is set to be greater than the In component of the InGaAs well layer In the i + 1-th quantum well layer, and since the refractive index of the InGaAs well layer increases with the increase of the In component, the optical field of the semiconductor laser can be further limited, so that the light emitting point position of the semiconductor laser is biased to the substrate side, and the divergence angle of the semiconductor laser is effectively reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a semiconductor laser according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another semiconductor laser provided in an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another semiconductor laser according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another semiconductor laser according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As described in the background art, in recent years, semiconductor lasers have been widely and deeply used in the fields of military, industrial processing, precision measurement, laser medical treatment, optical communication, optical storage, and laser printing, due to their characteristics of high conversion efficiency, small size, light weight, long lifetime, high reliability, direct modulation, and easy integration with other semiconductor devices. The high-power semiconductor laser has the characteristic of high output power, and is rapidly developed in the industrial fields of metal cutting, laser cladding, deep fusion welding and the like, and the fields of aerospace, national defense and military application and the like.
Based on this, the embodiment of the invention provides a semiconductor laser and a manufacturing method thereof, which can limit the optical field of the semiconductor laser while increasing the number of quantum wells included in the semiconductor laser, so that the light emitting point position of the semiconductor laser is deviated to the substrate side, and the divergence angle of the semiconductor laser is effectively reduced.
To achieve the above object, the technical solutions provided by the embodiments of the present invention are described in detail below, specifically with reference to fig. 1 to 4.
Referring to fig. 1, a schematic structural diagram of a semiconductor laser according to an embodiment of the present invention is shown, where the semiconductor laser includes:
the light-emitting diode comprises a substrate 100, an N-type DBR mirror layer 200, a light-emitting epitaxial structure 300, an oxide layer 400 and a P-type DBR mirror layer 500 which are sequentially arranged in a stacking mode in a first direction, wherein the light-emitting epitaxial structure 300 comprises a first quantum well layer to an Nth quantum well layer which are sequentially arranged in the first direction, and any one of the first quantum well layer to the Nth quantum well layer comprises an InGaAs well layer.
Wherein the In composition of the InGaAs well layer In the i-th quantum well layer is greater than the In composition of the InGaAs well layer In the i + 1-th quantum well layer, N is an integer greater than or equal to 2, and i is an integer greater than or equal to 1 and less than N.
As can be seen from the above, according to the technical scheme provided by the embodiment of the present invention, while the number of quantum wells included In the semiconductor laser is increased, the In component of the InGaAs well layer In the i-th quantum well layer is set to be greater than the In component of the InGaAs well layer In the i + 1-th quantum well layer, and since the refractive index of the InGaAs well layer increases with the increase of the In component, the optical field of the semiconductor laser can be further limited, so that the light emitting point of the semiconductor laser is biased to the substrate side, and the divergence angle of the semiconductor laser is effectively reduced.
In an embodiment of the present invention, the semiconductor laser provided by the present invention may include three quantum well layers, as shown in fig. 2, which is a schematic structural diagram of another semiconductor laser provided by the embodiment of the present invention, where N provided by the embodiment of the present invention is 3, where the light emitting epitaxial structure 300 includes a first waveguide layer 301, a first quantum well layer 302, a second waveguide layer 303, a first P-type layer 304, a first N-type layer 305, an N-type waveguide layer 306, a second quantum well layer 307, an AlGaAs layer 308, a second P-type layer 309, a second N-type layer 310, a third quantum well layer 311, and a P-type waveguide layer 312, which are sequentially disposed in the first direction.
Any one of the first quantum well layer to the nth quantum well layer provided by the embodiment of the present invention includes an InGaAs well layer, and the first quantum well layer provided by the embodiment of the present invention includes a GaAs barrier layer, the second quantum well layer includes an AlGaAs barrier layer, and the third quantum well layer includes an inalgas barrier layer. The quantum well layer provided by the embodiment of the invention does not specifically limit the number of the periodic repetitions of the well layer and the barrier layer, and the quantum well layer needs to be specifically designed according to practical application.
In the InGaAs well layer of the first quantum well layer provided by the embodiment of the invention, the composition of In is greater than 0.1 and less than 0.3, the thickness of the well layer of the first quantum well layer can be 5-10nm, including end points, and the thickness of the barrier layer of the first quantum well layer can be 5-15nm, including end points; the well layer growth temperature of the first quantum well layer provided by the embodiment of the invention can be 550-700 ℃, including an end value, and the growth pressure can be 50-500mbar, including an end value; and the barrier layer growth temperature of the first quantum well layer can be 550-700 ℃, inclusive, and the growth pressure can be 50-500mbar, inclusive.
The In composition In the InGaAs well layer of the second quantum well layer is more than 0.09 and less than 0.25, the well layer thickness of the second quantum well layer can be 5-10nm including an end value, and the barrier layer thickness of the second quantum well layer can be 5-15nm including an end value; the well layer growth temperature of the second quantum well layer provided by the embodiment of the invention can be 550-700 ℃, including an end value, and the growth pressure can be 50-500mbar, including an end value; and the barrier layer growth temperature of the second quantum well layer can be 550-700 ℃, inclusive, and the growth pressure can be 50-500mbar, inclusive.
The composition of In the InGaAs well layer of the third quantum well layer is greater than 0.05 and less than 0.15, the well layer thickness of the third quantum well layer may be 5-10nm, inclusive, and the barrier layer thickness of the third quantum well layer may be 5-15nm, inclusive. The Al component of the AlGaAs barrier layer provided by the embodiment of the invention is more than 0.05 and less than 0.25, and the In component of the InAlGaAs barrier layer is more than 0.05 and less than 0.25; the well layer growth temperature of the third quantum well layer provided by the embodiment of the invention can be 550-700 ℃, including an end point value, and the growth pressure can be 50-500mbar, including an end point value; and the barrier layer growth temperature of the third quantum well layer can be 550-700 ℃, inclusive, and the growth pressure can be 50-500mbar, inclusive.
It can be understood that the first quantum well layer provided by the embodiment of the invention can provide a deep-well and shallow-barrier active region, which can better confine electrons and is beneficial to injection of holes; meanwhile, the first quantum well layer of the deep well and the shallow barrier has a higher In component and a higher effective refractive index. The second quantum well layer enables better electron injection and hole injection, while the lower In composition of the second quantum well layer relative to the first quantum well layer makes its effective refractive index lower than that of the first quantum well layer. And the third quantum well layer can realize better electron injection and hole injection, and the effective refractive index of the third quantum well layer can be further reduced by reducing the In component, so that the In component of the InGaAs well layer In the ith quantum well layer is set to be larger than the In component of the InGaAs well layer In the (i + 1) th quantum well layer, the refractive index of the InGaAs well layer is increased along with the increase of the In component, the optical field of the semiconductor laser can be limited, the light emitting point position of the semiconductor laser is enabled to be deviated to the substrate side, and the divergence angle of the semiconductor laser is effectively reduced.
In an embodiment of the present invention, the first waveguide layer provided by the present invention is a first AlGaAs waveguide layer, the Al composition of the first AlGaAs waveguide layer is greater than 0.2 and less than 0.6, and the thickness of the first AlGaAs waveguide layer may be 50 nm; and the growth temperature of the first AlGaAs waveguide layer can be 650-800 ℃, including an end point value, and the growth pressure can be 50 mbar.
The second waveguide layer is a second AlGaAs waveguide layer, and the Al component of the second AlGaAs waveguide layer is more than 0.1 and less than 0.6; and the growth temperature of the second AlGaAs waveguide layer can be 600-800 ℃, inclusive, and the growth pressure can be 50-500mbar, inclusive.
The first P type layer is a first P type AlGaAs layer, the Al component of the first P type AlGaAs layer is more than 0.1 and less than 0.6, the doping source of the first P type AlGaAs layer is Mg or C, the doping concentration of the first P type AlGaAs layer is 5E19-2E20 including end points, and the V/III ratio of the first P type AlGaAs layer is 10-500 including end points; and the growth temperature of the first P-type AlGaAs layer can be 600-800 ℃, inclusive, and the growth pressure can be 50-500mbar, inclusive.
The first N-type layer is a first N-type AlGaAs layer, the Al component of the first N-type AlGaAs layer is more than 0 and less than 0.6, the doping source of the first N-type AlGaAs layer is Si or Te, the doping concentration of the first N-type AlGaAs layer is 1E18-5E19 including end points, and the V/III ratio of the first N-type AlGaAs layer is 10-500 including end points; and the growth temperature of the first N-type AlGaAs layer can be 600-800 ℃ inclusive, and the growth pressure can be 50-500mbar inclusive.
The N-type waveguide layer is an N-type AlGaAs waveguide layer, the Al component of the N-type AlGaAs waveguide layer is more than 0.2 and less than 0.6, and the thickness of the N-type AlGaAs waveguide layer can be 50-200nm, including an end point value; and the growth temperature of the N-type AlGaAs waveguide layer can be 600-800 ℃, inclusive, and the growth pressure can be 50-500mbar, inclusive.
The Al composition of the AlGaAs layer is greater than 0.05 and less than 0.25, the AlGaAs layer may be 50-200nm in thickness, inclusive; and the AlGaAs layer may be grown at a temperature of 600-800 ℃ inclusive and at a pressure of 50-500mbar inclusive.
The second P-type layer is a second P-type AlGaAs layer, the Al component of the second P-type AlGaAs layer is more than 0.05 and less than 0.25, the doping source of the second P-type AlGaAs layer is Mg or C, the doping concentration of the second P-type AlGaAs layer is 5E19-2E20, inclusive, and the V/III ratio of the second P-type AlGaAs layer is 10-500, inclusive; and the growth temperature of the second P-type AlGaAs layer can be 600-800 ℃, inclusive, and the growth pressure can be 50-500mbar, inclusive.
The second N-type layer is a second N-type AlGaAs layer, the Al component of the second N-type AlGaAs layer is more than 00.5 and less than 0.25, the doping source of the second N-type AlGaAs layer is Si or Te, the doping concentration of the second N-type AlGaAs layer is 1E18-5E19, inclusive, and the V/III ratio of the second N-type AlGaAs layer is 10-500, inclusive; and the growth temperature of the second N-type AlGaAs layer can be 600-800 ℃ inclusive, and the growth pressure can be 50-500mbar inclusive.
The P-type waveguide layer is a P-type AlGaAs waveguide layer, the Al component of the P-type AlGaAs waveguide layer is more than 0.2 and less than 0.6, and the thickness of the P-type AlGaAs waveguide layer can be 50-200nm, including an end point value; and the growth temperature of the P-type AlGaAs waveguide layer can be 600-800 ℃, inclusive, and the growth pressure can be 50-500mbar, inclusive.
And, the substrate provided by the embodiments of the present invention may be a GaAs substrate; the thickness of the N-type DBR mirror layer can be 4 μm, the growth temperature of the N-type DBR mirror layer can be 650-800 ℃, including the end point value, and the growth pressure can be 50 mbar. The thickness of the oxide layer can be 100nm, the growth temperature of the oxide layer can be 650-800 ℃, including an end point value, and the growth pressure can be 50 mbar. The thickness of the P-type DBR mirror layer can be 3 μm, the growth temperature of the P-type DBR mirror layer can be 650-.
As shown in fig. 3, a schematic structural diagram of another semiconductor laser according to an embodiment of the present invention is provided, wherein, in order to improve the performance of the semiconductor laser, the semiconductor laser further includes a buffer layer 600 located between the substrate 100 and the N-type DBR mirror layer 200. Optionally, the buffer layer provided in the embodiment of the present invention is a GaAs buffer layer, and the thickness of the buffer layer may be 10 to 25nm, inclusive; and the growth temperature of the GaAs buffer layer can be 600-700 ℃, including the end point value, and the growth pressure can be 50 mbar.
As shown in fig. 4, the semiconductor laser further includes a P-type AlGaAs layer 700 located on a side of the P-type DBR mirror layer 500 facing away from the substrate 100, the thickness of the P-type AlGaAs layer may be greater than 0 and not greater than 100nm, the Al composition of the P-type AlGaAs layer is greater than 0 and less than 0.5, and the Ga composition is greater than 0.5 and less than 1; and the growth temperature of the P-type AlGaAs layer can be 600-800 ℃, inclusive, and the growth pressure can be 50 mbar. Further, the semiconductor laser provided by the embodiment of the invention further includes a P-type GaAs layer 800 located on a side of the P-type AlGaAs layer 700 away from the substrate 100, a thickness of the P-type GaAs layer may be greater than 0 and not greater than 50nm, a growth temperature of the P-type GaAs layer may be 600-.
Correspondingly, the embodiment of the invention also provides a manufacturing method of the semiconductor laser, which comprises the following steps:
a substrate is provided.
Forming an N-type DBR mirror layer, a light-emitting epitaxial structure, an oxide layer and a P-type DBR mirror layer which are sequentially overlapped in a first direction on the substrate, wherein the light-emitting epitaxial structure comprises a first quantum well layer to an N-th quantum well layer which are sequentially arranged in the first direction, and any one of the first quantum well layer to the N-th quantum well layer comprises an InGaAs well layer; wherein the In composition of the InGaAs well layer In the i-th quantum well layer is greater than the In composition of the InGaAs well layer In the i + 1-th quantum well layer, N is an integer greater than or equal to 2, and i is an integer greater than or equal to 1 and less than N.
The N provided by the embodiment of the present invention is 3, wherein the light emitting epitaxial structure includes a first waveguide layer, a first quantum well layer, a second waveguide layer, a first P-type layer, a first N-type layer, an N-type waveguide layer, a second quantum well layer, an AlGaAs layer, a second P-type layer, a second N-type layer, a third quantum well layer, and a P-type waveguide layer, which are sequentially arranged in the first direction. Any one of the first quantum well layer to the nth quantum well layer provided by the embodiment of the present invention includes an InGaAs well layer, and the first quantum well layer provided by the embodiment of the present invention includes a GaAs barrier layer, the second quantum well layer includes an AlGaAs barrier layer, and the third quantum well layer includes an inalgas barrier layer.
In order to improve the performance of the semiconductor laser, the semiconductor laser provided by the embodiment of the invention further comprises a buffer layer located between the substrate and the N-type DBR mirror layer; and the P-type DBR reflector layer also comprises a P-type AlGaAs layer positioned on the side, away from the substrate, of the P-type DBR reflector layer, and a P-type GaAs layer positioned on the side, away from the substrate, of the P-type AlGaAs layer.
The embodiment of the invention provides a semiconductor laser and a manufacturing method thereof, wherein the semiconductor laser comprises the following steps: the light-emitting diode comprises a substrate, an N-type DBR (distributed Bragg Reflector) layer, a light-emitting epitaxial structure, an oxide layer and a P-type DBR layer, wherein the substrate, the N-type DBR layer, the light-emitting epitaxial structure, the oxide layer and the P-type DBR layer are sequentially arranged in a stacking mode in a first direction; wherein the In composition of the InGaAs well layer In the i-th quantum well layer is greater than the In composition of the InGaAs well layer In the i + 1-th quantum well layer, N is an integer greater than or equal to 2, and i is an integer greater than or equal to 1 and less than N.
As can be seen from the above, according to the technical scheme provided by the embodiment of the present invention, while the number of quantum wells included In the semiconductor laser is increased, the In component of the InGaAs well layer In the i-th quantum well layer is set to be greater than the In component of the InGaAs well layer In the i + 1-th quantum well layer, and since the refractive index of the InGaAs well layer increases with the increase of the In component, the optical field of the semiconductor laser can be further limited, so that the light emitting point of the semiconductor laser is biased to the substrate side, and the divergence angle of the semiconductor laser is effectively reduced.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A semiconductor laser, comprising:
the light-emitting diode comprises a substrate, an N-type DBR (distributed Bragg Reflector) layer, a light-emitting epitaxial structure, an oxide layer and a P-type DBR layer, wherein the substrate, the N-type DBR layer, the light-emitting epitaxial structure, the oxide layer and the P-type DBR layer are sequentially arranged in a stacking mode in a first direction;
wherein the In composition of the InGaAs well layer In the i-th quantum well layer is greater than the In composition of the InGaAs well layer In the i + 1-th quantum well layer, N is an integer greater than or equal to 2, and i is an integer greater than or equal to 1 and less than N.
2. The semiconductor laser of claim 1, wherein N is 3, and wherein the light emitting epitaxial structure comprises a first waveguide layer, a first quantum well layer, a second waveguide layer, a first P-type layer, a first N-type layer, an N-type waveguide layer, a second quantum well layer, an AlGaAs layer, a second P-type layer, a second N-type layer, a third quantum well layer, and a P-type waveguide layer disposed in that order in the first direction.
3. The semiconductor laser of claim 2, wherein the first quantum well comprises a GaAs barrier layer, the second quantum well layer comprises an AlGaAs barrier layer, and the third quantum well layer comprises an inalgas barrier layer.
4. A semiconductor laser as claimed in claim 3 wherein the Al composition of the AlGaAs barrier layer is greater than 0.05 and less than 0.25.
5. The semiconductor laser of claim 2 wherein the first waveguide layer is a first AlGaAs waveguide layer having an Al composition greater than 0.2 and less than 0.6;
the second waveguide layer is a second AlGaAs waveguide layer, and the Al component of the second AlGaAs waveguide layer is more than 0.1 and less than 0.6;
the first P type layer is a first P type AlGaAs layer, the Al component of the first P type AlGaAs layer is more than 0.1 and less than 0.6, the doping source of the first P type AlGaAs layer is Mg or C, the doping concentration of the first P type AlGaAs layer is 5E19-2E20 including end points, and the V/III ratio of the first P type AlGaAs layer is 10-500 including end points;
the first N-type layer is a first N-type AlGaAs layer, the Al component of the first N-type AlGaAs layer is more than 0 and less than 0.6, the doping source of the first N-type AlGaAs layer is Si or Te, the doping concentration of the first N-type AlGaAs layer is 1E18-5E19 including end points, and the V/III ratio of the first N-type AlGaAs layer is 10-500 including end points;
the N-type waveguide layer is an N-type AlGaAs waveguide layer, and the Al component of the N-type AlGaAs waveguide layer is more than 0.2 and less than 0.6;
the Al component of the AlGaAs layer is more than 0.05 and less than 0.25;
the second P-type layer is a second P-type AlGaAs layer, the Al component of the second P-type AlGaAs layer is more than 0.05 and less than 0.25, the doping source of the second P-type AlGaAs layer is Mg or C, the doping concentration of the second P-type AlGaAs layer is 5E19-2E20, inclusive, and the V/III ratio of the second P-type AlGaAs layer is 10-500, inclusive;
the second N-type layer is a second N-type AlGaAs layer, the Al component of the second N-type AlGaAs layer is more than 00.5 and less than 0.25, the doping source of the second N-type AlGaAs layer is Si or Te, the doping concentration of the second N-type AlGaAs layer is 1E18-5E19, inclusive, and the V/III ratio of the second N-type AlGaAs layer is 10-500, inclusive;
the P-type waveguide layer is a P-type AlGaAs waveguide layer, and the Al component of the P-type AlGaAs waveguide layer is more than 0.2 and less than 0.6.
6. A semiconductor laser as claimed in claim 1 further comprising a buffer layer between the substrate and the N-type DBR mirror layer.
7. A semiconductor laser as claimed in claim 6 wherein the buffer layer is a GaAs buffer layer.
8. A semiconductor laser as claimed in claim 1 further comprising a P-type AlGaAs layer on a side of the P-type DBR mirror layer facing away from the substrate.
9. A semiconductor laser as claimed in claim 8 further comprising a layer of P-GaAs on a side of the layer of P-AlGaAs facing away from the substrate.
10. A method of fabricating a semiconductor laser, comprising:
providing a substrate;
forming an N-type DBR mirror layer, a light-emitting epitaxial structure, an oxide layer and a P-type DBR mirror layer which are sequentially overlapped in a first direction on the substrate, wherein the light-emitting epitaxial structure comprises a first quantum well layer to an N-th quantum well layer which are sequentially arranged in the first direction, and any one of the first quantum well layer to the N-th quantum well layer comprises an InGaAs well layer; wherein the In composition of the InGaAs well layer In the i-th quantum well layer is greater than the In composition of the InGaAs well layer In the i + 1-th quantum well layer, N is an integer greater than or equal to 2, and i is an integer greater than or equal to 1 and less than N.
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