CN112397619A - Multi-quantum well structure with different widths for widening spectral width of super-radiation light-emitting diode - Google Patents
Multi-quantum well structure with different widths for widening spectral width of super-radiation light-emitting diode Download PDFInfo
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Abstract
The invention discloses a multi-quantum well structure with different widths for widening the spectral width of a super-radiation light-emitting diode, which comprises the following components in a laminated manner: the active layer comprises a plurality of quantum well layers with different thicknesses, and barrier layers are arranged between the quantum well layers. The active layer is made of AlGaInAs material and comprises four quantum well layers with the thicknesses of 7nm, 7.5nm, 8nm and 8.5nm respectively, and the quantum well layers adopt In0.76Ga0.12Al0.12As material, the thickness of the barrier layer between the quantum well layers is 20nm, and the barrier layer is made of Al0.31Ga0.18In0.51As material. The upper surface of the P-surface electrode is provided with a ridge-shaped strip which is used as a P-side electric injection region, the upper surface of the P-surface electrode and one side of the ridge-shaped strip are provided with optical absorption regions, and the ridge-shaped strip is obliquely arranged. Wide-spectrum antireflection films are evaporated on the front cavity surface and the rear cavity surface of the ridge-shaped strip.
Description
Technical Field
The invention relates to the field of super-radiation light-emitting diodes, in particular to a multi-quantum well structure with different widths for widening the spectral width of a super-radiation light-emitting diode.
Background
A super radiation light emitting diode is a semiconductor light emitting device developed in recent years, and has light emitting characteristics between a laser and a light emitting diode, and the semiconductor super radiation diode has higher power output and a narrower divergence angle than the semiconductor light emitting diode; compared with a semiconductor laser, the laser has the advantages of larger spectral width, better stability, ideal beam directivity and short coherence length. The optical power is high, the system precision and sensitivity can be improved, the wide spectrum can reduce the coherent error of light in the optical fiber caused by Rayleigh scattering, Kerr effect and the like, and therefore, the super-radiation light-emitting device is an ideal light source of the optical fiber gyroscope. Its emergence and development are driven in large part by fiber optic gyroscopes and become an important light source. At present, the superluminescent light emitting diode is also widely applied to wavelength division multiplexing technology, optical coherence tomography technology, tunable external cavity lasers and the like. The main application fields at present require superluminescent light-emitting diodes to have a spectral width as large as possible while having a large output power.
When a superluminescent light emitting diode is developed at present, light oscillation between front and rear cavity surfaces of a Fabry-Perot (F-P) type is destroyed through various local structure adjustments on the basis of a traditional laser structure, and further, the occurrence of light lasing is inhibited. Although the suppression is carried out, the F-P cavity exists all the time, or only one optical oscillation mode of the F-P oscillation exists all the time, and when the current is increased, the spectral width is gradually reduced, so that the output power of the device has a certain constraint relation with the spectrum. When the driving current is increased to a certain degree or partial aging is inhibited, the device is subjected to lasing, spontaneous superradiation is replaced by lasing, and the device fails.
CN109217106, "a method for suppressing F-P lasing of 1550nm SLD device by using multi-period surface DFB optical feedback system", is mainly to enhance optical feedback of some specific wavelengths by using DFB structure and suppress optical feedback of other wavelengths to enhance power of required wavelengths. The disadvantage of this method is that the maximum output power is significantly limited by improving the surface structure without improving its epitaxial structure, and when the current is increased further, the spectral width is narrowed and the superradiation is gradually replaced by lasing.
Disclosure of Invention
The invention aims to provide a multi-quantum well structure with different widths for widening the spectral width of a super-radiation light-emitting diode, so as to solve the problems in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
a multi-quantum well structure with different widths for broadening the spectral width of a super-radiation light-emitting diode comprises the following components in a stacked arrangement: the active layer comprises a plurality of quantum well layers with different thicknesses, and barrier layers are arranged between the quantum well layers.
The active layer is made of AlGaInAs material and comprises four quantum well layers with the thicknesses of 7nm, 7.5nm, 8nm and 8.5nm respectively, and the quantum well layers adopt In0.76Ga0.12Al0.12As material, the thickness of the barrier layer between the quantum well layers is 20nm, and the barrier layer is made of Al0.31Ga0.18In0.51As material.
The multiple quantum well structure with different widths for widening the spectral width of the super-radiation light emitting diode is an epitaxial structure of the super-radiation light emitting diode, and is designed into an InP substrate, an AlInAs limiting layer with the thickness of 100nm, an AlGaInAs waveguide layer with the thickness of 500nm, an AlGaInAs quantum well layer with the thickness of 8.5nm, an AlGaInAs barrier layer with the thickness of 20nm, an AlGaInAs quantum well layer with the thickness of 8nm, an AlGaInAs barrier layer with the thickness of 20nm, an AlGaInAs quantum well layer with the thickness of 7.5nm, an AlGaInAs barrier layer with the thickness of 20nm, an AlGaInAs quantum well layer with the thickness of 7nm, an AlGaInAsP type waveguide layer with the thickness of 500nm, and an AlInAsP. The AlInAs limiting layer on the InP substrate can effectively improve the light limiting capability of the device and effectively improve the luminous efficiency of the device. The AlGaInAs waveguide layer provides a transmission path for light. Except that the thickness of the quantum well has a specific meaning, the thicknesses of the other layers are considered in the aspects of resistance, light absorptivity and the like, and the matching of the specific thickness and each parameter has been proved by detailed experiments in the prior art, and is not described in detail herein.
In of different thickness0.76Ga0.12Al0.12As quantum wells can provide carrier recombination regions emitting different central wavelengths, and the spectral width of the device can be effectively widened. The quantum well material and well width (thickness) determine the wavelength of emergent wave, and In is selected0.76Ga0.12Al0.12As is used As a quantum well material and is matched with the optical lattice of light with the wavelength near 1550nm, the luminous efficiency is good, and In is obtained by simulation analysis In Crosslight software0.76Ga0.12Al0.12As has a strain amount of about 1.6% when being excited by light, and compared with materials with other components, the larger strain amount can enhance the band shearing effect and increase the luminous efficiency. In is selected0.76Ga0.12Al0.12Under the condition that As is used As a quantum well material, the luminescence wavelengths corresponding to different thicknesses are respectively analyzed, then quantum wells with the thicknesses of 8.5nm, 8nm, 7.5nm and 7nm are respectively selected, barrier layers are additionally arranged among the quantum wells to define boundaries, four layers of luminescent layers with different luminescence wavelengths are manufactured, and the measured luminescence wavelengths are 1570nm corresponding to the quantum well with the well width of 8nm, 1560nm corresponding to the quantum well with the well width of 8nm, 1550nm corresponding to the quantum well with the quantum well width of 7.5nm and 1540nm corresponding to the quantum well with the well width of 7.5 nm; the light source has larger luminous power in the wavelength range of 1500-1600 nm instead of being concentrated on a certain wavelength, thereby essentially widening the spectral width of the light source. In the application of the invention (super-radiation light-emitting diode), the quantum well widths corresponding to the several wavelengths are selected in a targeted manner, and the spectral width and the spectral distribution can be changed purposefully, so that the characteristic customization is achieved.
The upper surface of the P-surface electrode is provided with a ridge-shaped strip which is used as a P-side electric injection region, the upper surface of the P-surface electrode and one side of the ridge-shaped strip are provided with optical absorption regions, and the length direction of the ridge-shaped strip and a perpendicular line of the ridge-shaped strip, which is close to the side end surface of the optical absorption region, form an acute angle. The absorption region is prepared by electrochemical corrosion, has a higher absorption coefficient, can effectively reduce the feedback of light and reduce the F-P lasing probability, meanwhile, the ridge-shaped strip has a certain inclination angle, the inclined strip-shaped structure can effectively reduce the oscillation of the light on the front cavity surface and the back cavity surface, the F-P lasing is reduced, the F-P lasing probability is reduced from two aspects, and the F-P lasing cannot occur on a certain wavelength while the output power is improved.
The angle between the length direction of the ridge-shaped strip and the perpendicular line of the ridge-shaped strip close to the side end face of the optical absorption area is 1.3-3 degrees. Too large a tilt makes the optical path design difficult, and too small a tilt weakens the function of eliminating F-P lasing.
Wide-spectrum antireflection films are evaporated on the front cavity surface and the rear cavity surface of the ridge-shaped strip. The reflectivity of the broad-spectrum antireflection film is less than 2 percent. The center wavelength of the broad spectrum antireflection film is located at 1550 nmm. The spectral width of the broad-spectrum antireflection film is more than 80 nm. The antireflection film increases transmission, reduces reflection probability, further inhibits F-P lasing of front and rear cavity surfaces, inhibits the F-P lasing together with the inclined ridge strip and the optical absorption region, and effectively solves the restriction relation between the output power and the output spectrum width of the super-radiation light-emitting diode.
Compared with the prior art, the invention has the beneficial effects that: the invention effectively widens the spectral width of the device by emitting different central wavelengths through the multi-quantum well structure and adopts In0.76Ga0.12Al0.12As materials are used As quantum well materials, the quantity of strain of the As materials is 1.6%, and the luminous efficiency can be effectively increased. The surface of the device adopts an inclined ridge strip structure, wide-spectrum antireflection films with reflectivity less than 2% are evaporated on the front cavity surface and the rear cavity surface, an optical absorption area is manufactured at the non-light-emitting end of the device, F-P lasing is effectively inhibited through the above 3 methods, and emergent light is ensured to be super-radiation light; the method can effectively widen the spectral width of the super-radiation light-emitting diode while improving the maximum power of the device, does not need secondary epitaxy, does not need a complex tube core structure, has a simple preparation process, and can realize large-scale batch production.
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In order that the present invention may be more readily and clearly understood, a more particular description of the invention briefly described above will be rendered by reference to specific embodiments that are illustrated in the appended drawings.
FIG. 1 is a schematic view of an epitaxial structure of the present invention;
FIG. 2 is a spectrum of a device prepared in accordance with the present invention;
fig. 3 is a schematic top view of an epitaxial structure of the present invention after the upper absorbing region and ridge stripe are formed.
In the figure: 1. a P-side electrode; 2. a P-type confinement layer; 3. a P-type waveguide layer; 4. a 7nm thick AlGaInAs quantum well layer; 5. a 7.5nm thick AlGaInAs quantum well layer; 6. an 8nm thick AlGaInAs quantum well layer; 7. an 8.5nm thick AlGaInAs quantum well layer; 8. an N-type waveguide layer; 9. an N-type confinement layer; 10. an InP substrate; 11. an N-face electrode; 12. an absorption zone; 13. a ridge-shaped strip.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, a multiple quantum well structure with different widths for broadening the spectral width of super-radiation light emitting diode comprises: the active layer comprises a plurality of quantum well layers with different thicknesses, and barrier layers are arranged between the quantum well layers.
The active layer is made of AlGaInAs material and comprises four quantum well layers 4, 5, 6 and 7 with thicknesses of 7nm, 7.5nm, 8nm and 8.5nm respectively, wherein the quantum well layer adopts In0.76Ga0.12Al0.12As material, the thickness of the barrier layer between the quantum well layers is 15-25 nm, and the barrier layer is made of Al0.31Ga0.18In0.51As material.
The quantum well structure with different widths for widening the spectral width of the super-radiation light emitting diode is an epitaxial structure of the super-radiation light emitting diode, and is designed into an InP substrate 10, an AlInAs limiting layer (doped with Si) 9 with the wavelength of 100nm, an AlGaInAs waveguide layer 8 with the wavelength of 500nm, an AlGaInAs quantum well layer 7 with the wavelength of 8.5nm, an AlGaInAs barrier layer with the wavelength of 20nm, an AlGaInAs quantum well layer 6 with the wavelength of 8nm, an AlGaInAs barrier layer with the wavelength of 20nm, an AlGaInAs quantum well layer 5 with the wavelength of 7.5nm, an AlGaInAs barrier layer with the wavelength of 20nm, an AlGaInAs quantum well layer 4 with the wavelength of 7nm, an AlGaInAsP type waveguide layer 3 with the wavelength of 500nm and an AlInAsP type limiting layer (doped with Zn). The AlInAs limiting layer on the InP substrate can effectively improve the light limiting capability of the device and effectively improve the luminous efficiency of the device. The AlGaInAs waveguide layer provides a transmission path for light. Except that the thickness of the quantum well has a specific meaning, the thicknesses of the other layers are considered in the aspects of resistance, light absorptivity and the like, and the matching of the specific thickness and each parameter has been proved by detailed experiments in the prior art, and is not described in detail herein.
In of different thickness0.76Ga0.12Al0.12As quantum wells can provide carrier recombination regions emitting different central wavelengths, and the spectral width of the device can be effectively widened. The quantum well material and well width (thickness) determine the wavelength of emergent wave, and In is selected0.76Ga0.12Al0.12As is used As a quantum well material and is matched with the optical lattice of light with the wavelength near 1550nm, the luminous efficiency is good, and In is obtained by simulation analysis In Crosslight software0.76Ga0.12Al0.12As has a strain amount of about 1.6% when being excited by light, and compared with materials with other components, the larger strain amount can enhance the band shearing effect and increase the luminous efficiency. In is selected0.76Ga0.12Al0.12Respectively analyzing the luminescence wavelengths corresponding to different thicknesses under the condition that As is used As a quantum well material, then respectively selecting quantum wells with the thicknesses of 8.5nm, 8nm, 7.5nm and 7nm, additionally arranging barrier layers between the quantum wells to define boundaries, thereby manufacturing four luminescent layers with different luminescence wavelengths, and measuring to obtain the luminescent layers with the quantum wells with the well width of 8.5nm corresponding to the wavelength of 1570nm, the quantum wells with the well width of 8nm corresponding to the wavelength of 1560nm and the quantum wells with the well width of 7.5nm corresponding to the quantum wellsThe quantum well with the wavelength of 1550nm and the well width of 7.5nm corresponds to the wavelength of 1540 nm; as shown in FIG. 2, the light source has larger luminous power in the wavelength range of 1500-1600 nm, rather than being concentrated on a certain wavelength, thereby essentially widening the spectral width of the light source. In the application of the invention (super-radiation light-emitting diode), the quantum well widths corresponding to the several wavelengths are selected in a targeted manner, and the spectral width and the spectral distribution can be changed purposefully, so that the characteristic customization is achieved.
As shown in fig. 3, a ridge stripe 13 is disposed on the upper surface of the P-plane electrode 1, the ridge stripe 13 is used as a P-side electric injection region, an optical absorption region 12 is disposed on the upper surface of the P-plane electrode 1 and on one side of the ridge stripe 13, and the length direction of the ridge stripe 13 forms an acute angle with a perpendicular line of the ridge stripe 13 near the end surface of the optical absorption region 12. The absorption region is prepared by electrochemical corrosion, has a higher absorption coefficient, can effectively reduce the feedback of light and reduce the F-P lasing probability, meanwhile, the ridge strip 13 has a certain inclination angle, the inclined strip structure can effectively reduce the oscillation of light on the front cavity surface and the back cavity surface, reduce the F-P lasing probability from two aspects, and the F-P lasing cannot occur on a certain wavelength while the output power is improved.
The angle between the length direction of the ridge stripe 13 and the perpendicular line of the ridge stripe 13 near the side end face of the optical absorption region 12 is 1.3-3 deg. Too large a tilt makes the optical path design difficult, and too small a tilt weakens the function of eliminating F-P lasing.
Wide-spectrum antireflection films are evaporated on the front cavity surface and the rear cavity surface of the ridge strip 13. The reflectivity of the broad-spectrum antireflection film is less than 2 percent. The center wavelength of the broad spectrum antireflection film is located at 1550 nmm. The spectral width of the broad-spectrum antireflection film is more than 80 nm. The antireflection film increases transmission, reduces reflection probability, further inhibits F-P lasing of front and rear cavity surfaces, inhibits the F-P lasing together with the inclined ridge-shaped strip 13 and the optical absorption region 12, and effectively solves the restriction relation between the output power and the output spectral width of the super-radiation light-emitting diode.
The working principle of the invention is as follows: current is injected into the structure from the outside through the ridge strips 13 to the P-face electrode 1 and the N-face electrode 11, when the current passes through the active region, the current is compounded with the active region to generate light quanta, In0.76Ga0.12Al0.12As quantum wells with different thicknesses can provide carrier compound regions emitting different central wavelengths, the spectral width of a device is effectively widened, after the preparation of an epitaxial wafer is completed, an inclined ridge structure and an optical absorption region are respectively manufactured, and a wide-spectrum antireflection film is evaporated on the cavity surface to inhibit F-P lasing.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1068682A (en) * | 1992-05-19 | 1993-02-03 | 吉林大学 | Super-radiant luminotron of dip absorb area type |
| JPH0923040A (en) * | 1995-07-05 | 1997-01-21 | Nippondenso Co Ltd | Semiconductor light emitting element |
| CN1490887A (en) * | 2002-10-17 | 2004-04-21 | 中国科学院半导体研究所 | A superluminescent tube with self-organized quantum dots as the active region |
| CN2646872Y (en) * | 2003-05-23 | 2004-10-06 | 武汉光迅科技有限责任公司 | High coupling efficiency superradiation LED |
| CN1549353A (en) * | 2003-05-23 | 2004-11-24 | 武汉光迅科技有限责任公司 | Method for producing super radiation luminous diode and luminous diode thereof |
| US20060086941A1 (en) * | 2004-10-27 | 2006-04-27 | Han Il K | Superluminescent diode including active layer formed of various sized quantum dots and method of manufacturing the same |
| US20090152528A1 (en) * | 2007-09-18 | 2009-06-18 | Electronics And Telecommunications Research Institute | High-power, broad-band, superluminescent diode and method of fabricating the same |
| US20100193769A1 (en) * | 2007-05-01 | 2010-08-05 | Exalos Ag | Light source, and device |
| CN105590997A (en) * | 2016-03-24 | 2016-05-18 | 福建中科光芯光电科技有限公司 | Method for preparing superradiance light-emitting diodes |
| CN105870267A (en) * | 2016-04-28 | 2016-08-17 | 中国科学院福建物质结构研究所 | Quantum dot super luminescent diode and manufacturing method thereof |
| CN210245533U (en) * | 2019-08-12 | 2020-04-03 | 山东华光光电子股份有限公司 | Multi-quantum well structure with different widths for widening spectral width of super-radiation light-emitting diode |
-
2019
- 2019-08-12 CN CN201910739543.8A patent/CN112397619A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1068682A (en) * | 1992-05-19 | 1993-02-03 | 吉林大学 | Super-radiant luminotron of dip absorb area type |
| JPH0923040A (en) * | 1995-07-05 | 1997-01-21 | Nippondenso Co Ltd | Semiconductor light emitting element |
| CN1490887A (en) * | 2002-10-17 | 2004-04-21 | 中国科学院半导体研究所 | A superluminescent tube with self-organized quantum dots as the active region |
| CN2646872Y (en) * | 2003-05-23 | 2004-10-06 | 武汉光迅科技有限责任公司 | High coupling efficiency superradiation LED |
| CN1549353A (en) * | 2003-05-23 | 2004-11-24 | 武汉光迅科技有限责任公司 | Method for producing super radiation luminous diode and luminous diode thereof |
| US20060086941A1 (en) * | 2004-10-27 | 2006-04-27 | Han Il K | Superluminescent diode including active layer formed of various sized quantum dots and method of manufacturing the same |
| US20100193769A1 (en) * | 2007-05-01 | 2010-08-05 | Exalos Ag | Light source, and device |
| US20090152528A1 (en) * | 2007-09-18 | 2009-06-18 | Electronics And Telecommunications Research Institute | High-power, broad-band, superluminescent diode and method of fabricating the same |
| CN105590997A (en) * | 2016-03-24 | 2016-05-18 | 福建中科光芯光电科技有限公司 | Method for preparing superradiance light-emitting diodes |
| CN105870267A (en) * | 2016-04-28 | 2016-08-17 | 中国科学院福建物质结构研究所 | Quantum dot super luminescent diode and manufacturing method thereof |
| CN210245533U (en) * | 2019-08-12 | 2020-04-03 | 山东华光光电子股份有限公司 | Multi-quantum well structure with different widths for widening spectral width of super-radiation light-emitting diode |
Non-Patent Citations (1)
| Title |
|---|
| 孙春明: ""1550nm超辐射发光管结构设计与制作"", 《中国优秀硕士学位论文全文数据库信息科技辑》2019年第01期, 15 January 2019 (2019-01-15), pages 13 - 35 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2023119363A1 (en) * | 2021-12-20 | 2023-06-29 | ||
| WO2023119363A1 (en) * | 2021-12-20 | 2023-06-29 | 日本電信電話株式会社 | Light-emitting device |
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