CN112394546B - Method and system for regulating and controlling integrated termination resistance of traveling wave electrode modulator - Google Patents
Method and system for regulating and controlling integrated termination resistance of traveling wave electrode modulator Download PDFInfo
- Publication number
- CN112394546B CN112394546B CN202011269494.5A CN202011269494A CN112394546B CN 112394546 B CN112394546 B CN 112394546B CN 202011269494 A CN202011269494 A CN 202011269494A CN 112394546 B CN112394546 B CN 112394546B
- Authority
- CN
- China
- Prior art keywords
- traveling wave
- wave electrode
- resistance
- termination resistor
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 69
- 230000001276 controlling effect Effects 0.000 title claims abstract description 33
- 230000001105 regulatory effect Effects 0.000 title claims abstract description 22
- 238000009966 trimming Methods 0.000 claims abstract description 66
- 238000012360 testing method Methods 0.000 claims description 61
- 239000000463 material Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000000608 laser ablation Methods 0.000 claims description 7
- 150000002736 metal compounds Chemical class 0.000 claims description 6
- 230000033228 biological regulation Effects 0.000 claims description 4
- 238000003698 laser cutting Methods 0.000 claims description 3
- 238000013532 laser treatment Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000012545 processing Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 82
- 230000003287 optical effect Effects 0.000 description 14
- 238000001459 lithography Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000009740 moulding (composite fabrication) Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The invention provides a regulating and controlling method and a regulating and controlling system for an integrated termination resistor of a traveling wave electrode modulator, wherein the regulating and controlling method comprises the following steps: providing a wafer provided with a plurality of traveling wave electrode modulators, wherein the traveling wave electrode modulators are distributed at different positions in the wafer surface; obtaining characteristic parameters of the travelling wave electrode modulator at different positions in the wafer surface; determining ideal resistance values of termination resistors of the traveling wave electrode modulators at different positions in the wafer surface according to the characteristic parameters; and trimming the resistance value of the termination resistor according to the ideal resistance value. According to the invention, the ideal resistance values of the termination resistors at different positions are determined by collecting the characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface, and the resistance values of the termination resistors at different positions are regulated and controlled by laser processing, so that impedance matching can be effectively realized, the influence of process non-uniformity in the wafer surface is eliminated, and the device production yield is improved.
Description
Technical Field
The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a method and a system for regulating and controlling an integrated termination resistor of a traveling wave electrode modulator.
Background
An electro-optic modulator is a modulator made using the electro-optic effect. Modulation of the phase, amplitude, intensity, and polarization state of an optical signal is achieved by applying and varying an electrical signal. The traveling wave electrode is widely used in high-speed electro-optical modulators as a scheme for effectively improving the bandwidth of the electro-optical modulator, but the traveling wave electrode modulator needs to add a matched termination resistor at the electrode end to eliminate the microwave reflection at the electrode end. This is because the microwave reflection is superimposed on the microwave signal, resulting in a poor modulation effect.
At present, two schemes for adding a termination resistor at the tail end of an electrode are mainly adopted, one is that the device is externally connected with an off-chip resistor through a lead, and the other is that an on-chip integrated resistor is prepared in the device. The two schemes can realize impedance matching, eliminate microwave reflection and effectively improve the adjustment effect.
However, the external connection of the external resistors to the leads generally introduces longer connection lines, which brings additional parasitic effects, is unfavorable for impedance matching, and the scheme of external connection of the external resistors to each modulator is not suitable for the manufacture procedure of the large-scale integrated optical circuit containing a large number of modulators; although the scheme for preparing the on-chip integrated resistor in the device avoids the defects, the scheme has the defects of fixed resistance and incapability of regulating and controlling the resistance, and the on-chip integrated resistor is also easily affected by the process non-uniformity in the wafer surface in the process, so that impedance matching is difficult to realize.
Therefore, it is necessary to propose a new method and system for adjusting and controlling the integrated termination resistance of the traveling wave electrode modulator, which solve the above-mentioned problems.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an objective of the present invention is to provide a method and a system for adjusting and controlling an integrated termination resistor of a traveling wave electrode modulator, which are used for solving the problems of fixed resistance and susceptibility to process non-uniformity of the termination resistor integrated in a chip in the prior art.
To achieve the above and other related objects, the present invention provides a method for adjusting and controlling an integrated termination resistor of a traveling wave electrode modulator, comprising the steps of:
providing a wafer provided with a plurality of traveling wave electrode modulators, wherein the traveling wave electrode modulators are distributed at different positions in the wafer surface;
Obtaining characteristic parameters of the travelling wave electrode modulator at different positions in the wafer surface;
Determining ideal resistance values of termination resistors of the traveling wave electrode modulators at different positions in the wafer surface according to the characteristic parameters;
and trimming the resistance value of the termination resistor according to the ideal resistance value.
As an alternative of the present invention, the characteristic parameters include: line width, thickness and sheet resistance of the material layer constituting the termination resistor.
As an alternative of the present invention, the traveling wave electrode modulator includes a silicon-based modulator; the characteristic parameters further include: PN junction capacitance value and PN junction series resistance value of unit length of PN junction for electro-optical modulation.
As an alternative scheme of the invention, a plurality of test devices are also prepared on the wafer, the plurality of test devices are distributed at different positions in the wafer surface, and the characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface are obtained by testing the test devices.
As an alternative of the present invention, the material layer constituting the termination resistor includes a metal layer, a metal compound layer, or a doped silicon layer.
As an alternative of the present invention, after obtaining the characteristic parameters of different positions in the wafer plane, the method further includes a step of obtaining a prediction model of the characteristic parameters according to the position in the wafer plane through the characteristic parameters.
As an alternative of the present invention, after obtaining the characteristic parameters of different positions in the wafer plane, the method further includes a step of obtaining prediction models of the traveling wave electrode impedance and the resistance sheet resistance of the different positions in the wafer plane through the characteristic parameters.
As an alternative of the present invention, the termination resistor includes a thin film resistor; the method for trimming the resistance value of the termination resistor comprises the following steps: and removing part of the area of the thin film resistor by adopting laser so as to reduce the cross-sectional area of at least part of the area in the thin film resistor in the conductive direction.
As an alternative of the present invention, the termination resistor includes a parallel circuit formed of a plurality of sub resistors; the method for trimming the resistance value of the termination resistor comprises the following steps: at least one of the sub-resistances is disconnected from the parallel circuit of termination resistances.
As an alternative of the present invention, the method for trimming the resistance of the termination resistor includes: laser ablation is employed to turn off at least one of the sub-resistors.
As an alternative of the present invention, the method for trimming the resistance of the termination resistor includes: laser cutting is used to break the connection line of at least one of the sub-resistors.
The invention also provides a regulating and controlling system of the integrated termination resistor of the traveling wave electrode modulator, which is characterized by comprising the following components:
Preparing a wafer with a plurality of traveling wave electrode modulators, wherein the traveling wave electrode modulators are distributed at different positions in the wafer surface;
the characteristic parameter testing module is used for testing and obtaining characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface;
The resistance value determining module is connected with the characteristic parameter testing module and is used for acquiring the characteristic parameters from the characteristic parameter testing module and determining ideal resistance values of termination resistors of the traveling wave electrode modulators at different positions in the wafer surface;
and the resistance trimming module is used for trimming the resistance of the termination resistor according to the ideal resistance.
As an alternative of the present invention, the feature parameters tested by the feature parameter testing module include: line width, thickness and sheet resistance of the material layer constituting the termination resistor.
As an alternative of the present invention, the traveling wave electrode modulator includes a silicon-based modulator; the characteristic parameters further include: PN junction capacitance value and PN junction series resistance value of unit length of PN junction for electro-optical modulation.
As an alternative scheme of the invention, a plurality of test devices are also prepared on the wafer, the plurality of test devices are distributed at different positions in the wafer surface, and the characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface are obtained by testing the test devices.
As an alternative of the present invention, the material layer constituting the termination resistor includes a metal layer, a metal compound layer, or a doped silicon layer.
As an alternative of the present invention, the termination resistor includes a thin film resistor; the thin film resistor is provided with a resistance trimming area which traverses the thin film resistor; the resistance trimming module comprises a laser; the method for trimming the resistance value of the termination resistor by the resistance value trimming module comprises the following steps: and removing the thin film resistor on the resistance trimming area by laser of a laser so as to reduce the cross section area of the resistance trimming area in the conductive direction.
As an alternative of the present invention, the termination resistor includes a parallel circuit formed of a plurality of sub resistors; the method for trimming the resistance value of the termination resistor by the resistance value trimming module comprises the following steps: at least one of the sub-resistances is disconnected from the parallel circuit of termination resistances.
As an alternative of the present invention, the resistance trimming module includes a laser; the sub-resistor includes a truncated region traversing the sub-resistor; the method for trimming the resistance value of the termination resistor comprises the following steps: cutting the cut-off region by a laser to cut off at least one of the sub-resistors.
As an alternative of the present invention, the resistance trimming module includes a laser; the two ends of the sub resistor are connected to the connecting wire; the method for trimming the resistance value of the termination resistor comprises the following steps: cutting off a connecting wire at one end of at least one of the sub-resistors by laser to disconnect at least one of the sub-resistors.
As described above, the invention provides a method and a system for regulating and controlling an integrated termination resistor of a traveling wave electrode modulator, which have the following beneficial effects:
According to the invention, the ideal resistance values of the termination resistors at different positions are determined by collecting the characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface, and the resistance values of the termination resistors at different positions are regulated and controlled by laser processing, so that impedance matching can be effectively realized, the influence of process non-uniformity in the wafer surface is eliminated, and the device production yield is improved.
Drawings
Fig. 1 is a schematic top view of a traveling wave electrode modulator.
Fig. 2 is a schematic top view of a traveling wave electrode modulator employing an off-chip resistor connected to a lead.
Fig. 3 shows a schematic top view of a traveling wave electrode modulator employing on-chip integrated resistors.
Fig. 4 is a flowchart of a method for adjusting and controlling an integrated termination resistor of a traveling wave electrode modulator according to a first embodiment of the present invention.
Fig. 5 is a schematic view of a wafer provided with a plurality of traveling wave electrode modulators according to a first embodiment of the present invention.
Fig. 6 is a cross-sectional view of a termination resistor in a device structure provided in a first embodiment of the invention.
Fig. 7 is a top view of a termination resistor in a device structure according to a first embodiment of the present invention.
Fig. 8 is a top view of the termination resistor according to the first embodiment of the invention after trimming.
Fig. 9 is a cross-sectional view showing a termination resistor in a device structure provided in a second embodiment of the present invention.
Fig. 10 is a top view of a termination resistor in a device structure according to a second embodiment of the present invention.
Fig. 11 is a top view of a modified termination resistor according to a second embodiment of the invention.
Fig. 12 is a cross-sectional view showing a termination resistor in a device structure provided in the third embodiment of the present invention.
Fig. 13 is a top view showing a termination resistor in a device structure according to a third embodiment of the present invention.
Fig. 14 is a top view of a modified termination resistor according to a third embodiment of the present invention.
Description of element reference numerals
101. Device chip
102. Optical waveguide
102A input terminal
102B output terminal
103. Travelling wave electrode
201. Device chip
202. Optical waveguide
203. Travelling wave electrode
204. Off-chip resistor
301. Device chip
302. Optical waveguide
303. Travelling wave electrode
304. Off-chip resistor
400. Wafer with a plurality of wafers
400A lithography exposure area
400B test lithography exposure area
401. Termination resistor
401A notch region
402. Through hole conductive structure
403. Metal wiring layer
501A truncated region
501B sub-resistor
502. Through hole conductive structure
503. Metal wiring layer
601B sub-resistor
602. Through hole conductive structure
603. Metal wiring layer
604. Connecting wire
604A truncated area
S1-S4 steps 1) -4)
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 to 14. It should be noted that, the illustrations provided in the present embodiment are merely schematic illustrations of the basic concepts of the present invention, and only the components related to the present invention are shown in the illustrations, rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 1, a schematic top view of a traveling wave electrode modulator is shown. An optical waveguide 102 and a traveling wave electrode 103 are prepared on a device chip 101. An optical signal enters the optical waveguide 102 from an input end 102a of the optical waveguide 102, and is output from an output end 102b after being modulated. The traveling wave electrode modulator may modulate parameters such as phase, amplitude, intensity, and polarization of the optical signal passing through the optical waveguide 102 by providing the traveling wave electrode 103 and applying an electrical signal.
In a traveling wave electrode modulator, the ends of the traveling wave electrode typically also need to be connected to matched termination resistors to eliminate microwave reflections from the electrode ends.
Fig. 2 is a schematic top view of a traveling wave electrode modulator using an off-chip resistor connected to the lead. An optical waveguide 202 and a traveling wave electrode 203 are prepared on the device chip 201. Wherein the end of the traveling wave electrode 203 is connected to an off-chip resistor 204 by a wire. Impedance matching is performed by the off-chip resistor 204 to eliminate microwave reflection and improve tuning. However, the connection between the off-chip resistor 204 and the traveling wave electrode 203 needs to be made through a longer wire, which generates additional parasitic effects, which is disadvantageous for realizing impedance matching. Furthermore, the one-to-one external-tab external resistance scheme for each modulator is not suitable for use in large scale integrated optical circuit manufacturing processes that include a large number of modulators.
As shown in fig. 3, a schematic top view of a traveling wave electrode modulator using on-chip integrated resistors is shown. An optical waveguide 302 and a traveling wave electrode 303 are prepared on a device chip 301. Wherein the end of the traveling wave electrode 303 is connected to an on-chip integrated resistor 304. Impedance matching is performed through the on-chip integrated resistor 304 to eliminate microwave reflection and improve the adjustment effect. However, the on-chip integrated resistor 304 is manufactured by integrating the resistor in the manufacturing process of the row-wave electrode modulator, and the resistor value is fixed after the row-wave electrode modulator is manufactured, and cannot be adjusted according to the impedance matching requirement. In addition, in the existing process, each step process for preparing the traveling wave electrode modulator has non-uniformity in the wafer plane, which also directly results in different ideal matching resistances required by the traveling wave electrode modulator at different positions in the wafer plane, which is also disadvantageous for impedance matching.
Example 1
Referring to fig. 4 to 8, the present embodiment provides a method for adjusting and controlling an integrated termination resistor of a traveling wave electrode modulator, which is characterized by comprising the following steps:
1) Providing a wafer provided with a plurality of traveling wave electrode modulators, wherein the traveling wave electrode modulators are distributed at different positions in the wafer surface;
2) Obtaining characteristic parameters of the travelling wave electrode modulator at different positions in the wafer surface;
3) Determining ideal resistance values of termination resistors of the traveling wave electrode modulators at different positions in the wafer surface according to the characteristic parameters;
4) And trimming the resistance value of the termination resistor according to the ideal resistance value.
In step 1), referring to step S1 of fig. 4 and fig. 5, a wafer 400 is provided, in which a plurality of traveling wave electrode modulators are prepared, and the traveling wave electrode modulators are distributed at different positions within the surface of the wafer 400.
As shown in fig. 5, a schematic diagram of a wafer 400 with a plurality of traveling wave electrode modulators is provided in this embodiment. The wafer 400 is divided into a plurality of lithography exposure areas 400a (shots), and a plurality of traveling wave electrode modulators are further formed in the lithography exposure areas 400 a. Optionally, a test device for testing the characteristic parameter is further disposed at the scribe line or the like of the wafer 400. And the test devices are distributed at different positions in the wafer surface, and the characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface are obtained by testing the test devices. The characteristic parameters include: line width, thickness and sheet resistance of the material layer constituting the termination resistor. When the traveling wave electrode modulator comprises a silicon-based modulator, the characteristic parameters further comprise: PN junction capacitance value and PN junction series resistance value of unit length of PN junction for electro-optical modulation. In addition, when the characteristic parameters can be obtained directly from the test of the travelling wave electrode modulator in the device area, an additional test device can be omitted.
In the wafer manufacturing process for preparing the travelling wave electrode modulator, the processes of each step such as film forming, photoetching and etching have non-uniformity in the wafer surface. For example, in a film forming or dry etching process, there may be non-uniformity in film forming thickness or etching rate in the center region and the edge region of the wafer, i.e., non-uniformity in the radial direction of the wafer; in a photolithographic process, there may be non-uniformity in feature sizes in different photolithographic exposure areas, as well as non-uniformity in different locations in the same photolithographic exposure area; in the wet etching process, non-uniformity may occur in a direction along which the wafer enters and exits the wet groove; in addition, unexpected environmental factors such as particle contamination may introduce random irregularities in the wafer surface. The non-uniformity may cause a large performance difference of the traveling wave electrode modulator at different positions in the wafer surface, and a large difference will occur in the ideal termination resistance value required for impedance matching. If a unified on-chip integrated resistor design is adopted, the impedance matching requirement of the traveling wave electrode modulator at different positions of the wafer cannot be met due to the fact that the design resistance is limited to a fixed design resistance, and therefore the traveling wave electrode modulator in a partial area cannot achieve effective impedance matching to eliminate microwave reflection. Therefore, how to purposefully adjust the termination resistance of the traveling wave electrode modulator according to the performance differences of the traveling wave electrode modulators at different positions of the wafer so as to effectively realize impedance matching is a key for solving the problems and improving the product yield.
In step 2), referring to step S2 of fig. 4 and fig. 5, characteristic parameters of the traveling wave electrode modulator at different positions in the plane of the wafer 400 are obtained. As described above, the characteristic parameters include the line width, thickness, and sheet resistance of the material layer of the termination resistor, the PN junction capacitance value per unit length and the PN junction series resistance value of the PN junction for electro-optical modulation. The characteristic parameters can be obtained by testing the test devices arranged at different positions of the wafer.
As an example, as shown in fig. 5, a plurality of test lithography exposure areas 400b are selected at different positions of the wafer 400, and test devices in the respective lithography exposure areas are tested respectively to obtain the required feature parameters at different positions of the wafer. It should be noted that the test lithography exposure area 400b may be selected to cover as many different locations as possible, such as the center area and the edge area of the wafer, to characterize the wafer process non-uniformity.
In step 3), referring to step S3 of fig. 4 and fig. 5, the ideal resistance of the termination resistance of the traveling wave electrode modulator at different positions in the wafer plane is determined according to the characteristic parameters.
As an example, to determine the ideal resistance value of the termination resistance of the traveling wave electrode modulator at different positions in the wafer plane, after obtaining the characteristic parameters of the different positions in the wafer plane, the method further includes the step of obtaining a prediction model of the characteristic parameters along with the position changes in the wafer plane through the characteristic parameters, and the step of obtaining the prediction model of the traveling wave electrode impedance and the resistance sheet resistance at the different positions in the wafer plane through the characteristic parameters.
For example, as shown in FIG. 5, the characteristic parameters described above that represent the respective lithographic exposure areas are obtained by testing the respective test devices in the respective test lithographic exposure areas 400 b. According to the characteristic parameters, the position information of the characteristic parameters in the wafer is combined, and a prediction model of the characteristic parameters along with the position change in the wafer plane can be established so as to predict the numerical values of the characteristic parameters at other positions which are not tested. For example, in one embodiment of the present invention, the characteristic parameters of other positions of the wafer, such as the line width of the material layer, can be estimated by combining the variation trend of the non-uniformity of the wafer in the radial direction or in a single direction; in another embodiment of the present invention, the characteristic parameters of a certain lithographic exposure area located between two test lithographic exposure areas 400b may also be simply taken as the average of the characteristic parameters of the two test lithographic exposure areas 400 b. Based on characteristic parameter data of different positions in the wafer surface, the prediction model of the traveling wave electrode impedance and the resistance sheet resistance of the different positions in the wafer surface can be further obtained through electromagnetic simulation, and the ideal resistance value of the termination resistance of the traveling wave electrode modulator of each position is determined according to the impedance prediction values of the different positions. For example, the resistance value of the material layer can be calculated by measuring the line width and the thickness of the material layer, whether the termination resistance value and the traveling wave electrode resistance value are matched can be estimated by calculating the termination resistance value and the traveling wave electrode resistance value respectively, and when the termination resistance value and the traveling wave electrode resistance value are not matched, for example, when the resistance values are not equal, the termination resistance value can be obtained and the adjustment of the termination resistance value is needed to be carried out so as to achieve the ideal resistance value for realizing the matching.
In step 4), referring to step S4 of fig. 4 and fig. 6 to 8, the resistance of the termination resistor 401 is trimmed according to the ideal resistance. Optionally, the material layer constituting the termination resistor 401 includes a metal layer, a metal compound layer, or a doped silicon layer, and the termination resistor 401 includes a thin film resistor composed of the above material layer.
Fig. 6 is a cross-sectional view of the termination resistor 401 in the device structure according to the present embodiment, and fig. 7 is a top view thereof. It should be noted that, in order to clearly show the termination resistor 401 and the connection relationship thereof, the dielectric layer covering the termination resistor and the metal wiring structure is omitted in the related schematic diagram of the present embodiment. In fig. 6, both ends of the terminating resistor 401 are connected to an upper metal wiring layer 403 through a via conductive structure 402, and the metal wiring layer 403 is further connected to the traveling wave electrode terminal. Optionally, as shown in fig. 8, the method for trimming the resistance value of the termination resistor 401 includes: a laser is used to remove a portion of the termination resistor 401 to reduce the cross-sectional area of at least a portion of the termination resistor 401 in the conductive direction. In fig. 8, after removing a part of the terminating resistor 401 by laser melting or vaporizing the material layer, a notch area 401a is formed, which effectively reduces the cross-sectional area of the terminating resistor 401 in the conductive direction at that position, thereby increasing the resistance of the terminating resistor 401. Since the laser ablation process generally only increases the resistance, the resistance of the terminating resistor can be designed to be smaller in the wafer process, and then the resistance is increased by the laser ablation process according to the ideal resistance that can achieve matching.
Example two
Referring to fig. 9 to 11, the present embodiment provides a method for adjusting and controlling an integrated termination resistor of a traveling wave electrode modulator, which is different from the first embodiment at least in that: the termination resistor comprises a plurality of parallel sub-resistors 501b; the method for trimming the resistance value of the termination resistor comprises the following steps: at least one of the sub-resistors 501b is disconnected from the parallel circuit of the termination resistors. Specifically, laser ablation is employed to break at least one of the sub-resistors 501b.
Fig. 9 is a cross-sectional view of the termination resistor in the device structure according to the present embodiment, and fig. 10 is a top view thereof. It should be noted that, in order to clearly show the termination resistor and the connection relationship thereof, the dielectric layer covering the termination resistor and the metal wiring structure is omitted in the related schematic diagram of the present embodiment. In fig. 9, both ends of a plurality of parallel sub-resistors 501b are connected to an upper metal wiring layer 503 through a via hole conductive structure 502, and the metal wiring layer 503 is further connected to the traveling wave electrode terminal. As shown in fig. 11, the method for trimming the resistance of the termination resistor includes: laser ablation is employed to turn off at least one of the sub-resistors 501b. In fig. 11, a cut region 501a is formed by laser melting or vaporizing a material layer, cutting off one of a plurality of sub-resistors 501b, and further increasing the resistance value of the termination resistor.
Compared with the first embodiment, in the present embodiment, by adopting a plurality of parallel sub-resistors 501b, at least one of the sub-resistors 501b is cut off when the resistance value is regulated by laser ablation, so that the resistance value change is more accurate and controllable, the operation is more standard and simple, and errors are not easy to occur.
Other embodiments of this embodiment are the same as those of embodiment one, and will not be described here again.
Example III
Referring to fig. 12 to 14, the present embodiment provides a method for adjusting and controlling an integrated termination resistor of a traveling wave electrode modulator, which is different from the embodiment at least in that: when the resistance value of the terminating resistor is trimmed, laser cutting is adopted to cut off the connecting line of at least one sub resistor.
Fig. 12 is a cross-sectional view of the termination resistor in the device structure according to the present embodiment, and fig. 13 is a top view thereof. It should be noted that, in order to clearly show the termination resistor and the connection relationship thereof, the dielectric layer covering the termination resistor and the metal wiring structure is omitted in the related schematic diagram of the present embodiment. In fig. 12, two ends of a plurality of parallel sub-resistors 601b are connected to an upper metal wiring layer 603 through a via conductive structure 602, the metal wiring layer 603 is further connected to the end of the traveling wave electrode, and the series sub-resistors 601b are also connected through a connection line 604. As shown in fig. 14, the method for trimming the resistance of the termination resistor includes: a laser cut is used to break the connection line 604 of at least one of said sub-resistors 601 b. In fig. 14, a cutting region 604a is formed by laser melting or vaporizing the material layer, one connecting line 604 of the plurality of sub-resistors 601b is cut off, the sub-resistors 601b on both sides thereof are disconnected from the parallel circuit, and the resistance value of the termination resistor is increased. It should be noted that this embodiment only illustrates a connection relationship between a sub-resistor and a connection line, and in other embodiments of the present invention, the connection line that may be cut off may be disposed at other positions in series with the sub-resistor.
In comparison with the second embodiment, the present embodiment opens the sub-resistor from the parallel circuit of the terminating resistor by disconnecting the connection line of the sub-resistor. The connecting wire in the semiconductor integrated circuit is generally made of metal materials with lower melting points such as aluminum, copper and the like, and for the terminating resistor made of material layers with higher melting points such as doped silicon and the like, the scheme of cutting off the connecting wire by laser in the embodiment can realize the disconnection of the sub-resistor at lower temperature and prevent the chip from being damaged due to the high temperature of laser heating.
Other embodiments of this example are the same as the examples and will not be described here again.
Example IV
Referring to fig. 5 to 14, the present embodiment provides a system for adjusting and controlling an integrated termination resistor of a traveling wave electrode modulator, which is characterized by comprising:
Preparing a wafer with a plurality of traveling wave electrode modulators, wherein the traveling wave electrode modulators are distributed at different positions in the wafer surface;
the characteristic parameter testing module is used for testing and obtaining characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface;
The resistance value determining module is connected with the characteristic parameter testing module and is used for acquiring the characteristic parameters from the characteristic parameter testing module and determining ideal resistance values of termination resistors of the traveling wave electrode modulators at different positions in the wafer surface;
and the resistance trimming module is used for trimming the resistance of the termination resistor according to the ideal resistance.
As shown in fig. 5, a wafer 400 prepared with a plurality of traveling wave electrode modulators is divided into a plurality of photolithographic exposure areas 400a in which the plurality of traveling wave electrode modulators are formed. Optionally, a test device for testing the characteristic parameter is further disposed at the scribe line or the like of the wafer 400. The test devices are distributed at different positions in the wafer surface, and the characteristic parameter test module is used for obtaining characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface by testing the test devices.
As an example, the characteristic parameters tested by the characteristic parameter testing module include: line width, thickness and sheet resistance of the material layer constituting the termination resistor. Optionally, when the travelling wave electrode modulator includes a silicon-based modulator, the characteristic parameters further include: PN junction capacitance value and PN junction series resistance value of unit length of PN junction for electro-optical modulation. The characteristic parameter testing module comprises a semiconductor parameter tester for testing electrical parameters such as capacitance, voltage, resistance and the like, characteristic dimension measuring equipment for measuring the line width of the material layer of the terminating resistor and film thickness measuring equipment for measuring the thickness of the material layer of the terminating resistor.
As an example, the material layer constituting the termination resistor includes a metal layer, a metal compound layer, or a doped silicon layer.
As an example, as shown in fig. 6 to 8, the termination resistor includes a thin film resistor; the thin film resistor is provided with a resistance trimming area 401b traversing the thin film resistor; the resistance trimming module comprises a laser; the method for trimming the resistance value of the termination resistor by the resistance value trimming module comprises the following steps: and removing the thin film resistor on the resistance trimming area by laser of a laser so as to reduce the cross section area of the resistance trimming area in the conductive direction. In fig. 6, both ends of the terminating resistor 401 are connected to an upper metal wiring layer 403 through a via conductive structure 402, and the metal wiring layer 403 is further connected to the traveling wave electrode terminal. Fig. 7 is a plan view thereof, defining a middle region of the termination resistor 401 as the resistance trimming region 401b. In fig. 8, a notch area 401a is formed by removing part of the sheet resistance on the resistance trimming area 401b in fig. 7 by laser light to reduce the cross-sectional area of the terminating resistance 401 in the conductive direction, thereby increasing the resistance value thereof. In other embodiments of the present invention, the trimming area 401b may be disposed at other suitable positions of the termination resistor 401.
As an example, as shown in fig. 9 to 14, the termination resistor includes a parallel circuit constituted by a plurality of sub resistors; the method for trimming the resistance value of the termination resistor by the resistance value trimming module comprises the following steps: at least one of the sub-resistances is disconnected from the parallel circuit of termination resistances.
As an example, as shown in fig. 9 to 11, an embodiment in which the trimming of the resistance value is achieved by switching off at least one of the sub-resistors itself. The resistance trimming module comprises a laser. As shown in fig. 9 and 10, two ends of the plurality of parallel sub-resistors 501b are connected to an upper metal wiring layer 503 through a via conductive structure 502, and the metal wiring layer 503 is further connected to the traveling wave electrode terminal. As shown in fig. 10, the sub-resistor includes a truncated region 501c that traverses the sub-resistor. As shown in fig. 11, the method for trimming the resistance of the termination resistor includes: the cut-off region 501c in fig. 10 is cut off by a laser to turn off at least one of the sub-resistors. Only one of the cut-off regions 501c is shown in fig. 10, and the cut-off region 501c may be provided on virtually all of the cuttable sub-resistors. The arrangement position of the intercepting region 501c may not be limited to the position shown in fig. 10.
As an example, as shown in fig. 12 to 14, an embodiment in which the trimming of the resistance value is achieved by the disconnection of the connection line of at least one of the sub-resistors is shown. The resistance trimming module comprises a laser. As shown in fig. 12 and 13, both ends of the sub-resistor are connected to a connection line. As shown in fig. 14, the method for trimming the resistance of the termination resistor includes: cutting off a connecting wire at one end of at least one of the sub-resistors by laser to disconnect at least one of the sub-resistors. Specifically, in fig. 14, by forming the cut-off region 604a, the connection line 604 is cut off, and the resistance value of the termination resistor is increased. In other embodiments of the present invention, the location of the connection line is not limited to that shown in the present embodiment, and the terminating resistor and the connection line may be connected in any other possible manner and cut according to the resistor trimming requirement.
In summary, the invention provides a method and a system for regulating and controlling an integrated termination resistor of a traveling wave electrode modulator, wherein the regulating and controlling method comprises the following steps: providing a wafer provided with a plurality of traveling wave electrode modulators, wherein the traveling wave electrode modulators are distributed at different positions in the wafer surface; obtaining characteristic parameters of the travelling wave electrode modulator at different positions in the wafer surface; determining ideal resistance values of termination resistors of the traveling wave electrode modulators at different positions in the wafer surface according to the characteristic parameters; and trimming the resistance value of the termination resistor according to the ideal resistance value. The regulation and control system of the integrated termination resistance of the traveling wave electrode modulator comprises: preparing a wafer with a plurality of traveling wave electrode modulators, wherein the traveling wave electrode modulators are distributed at different positions in the wafer surface; the characteristic parameter testing module is used for testing and obtaining characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface; the resistance value determining module is connected with the characteristic parameter testing module and is used for acquiring the characteristic parameters from the characteristic parameter testing module and determining ideal resistance values of termination resistors of the traveling wave electrode modulators at different positions in the wafer surface; and the resistance trimming module is used for trimming the resistance of the termination resistor according to the ideal resistance. According to the invention, the ideal resistance values of the termination resistors at different positions are determined by collecting the characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface, and the resistance values of the termination resistors at different positions are regulated and controlled by laser processing, so that impedance matching can be effectively realized, the influence of process non-uniformity in the wafer surface is eliminated, and the device production yield is improved.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (20)
1. The method for regulating and controlling the integrated termination resistance of the traveling wave electrode modulator is characterized by comprising the following steps of:
providing a wafer provided with a plurality of traveling wave electrode modulators, wherein the traveling wave electrode modulators are distributed at different positions in the wafer surface;
Obtaining characteristic parameters of the travelling wave electrode modulator at different positions in the wafer surface;
Determining ideal resistance values of termination resistors of the traveling wave electrode modulators at different positions in the wafer surface according to the characteristic parameters;
And trimming the resistance value of the termination resistor by adopting laser treatment according to the ideal resistance value.
2. The method for regulating and controlling the integrated termination resistance of the traveling wave electrode modulator according to claim 1, wherein the characteristic parameters include: line width, thickness and sheet resistance of the material layer constituting the termination resistor.
3. The method for regulating and controlling an integrated termination resistor of a traveling wave electrode modulator according to claim 2, wherein the traveling wave electrode modulator comprises a silicon-based modulator; the characteristic parameters further include: PN junction capacitance value and PN junction series resistance value of unit length of PN junction for electro-optical modulation.
4. The method for regulating and controlling the integrated termination resistance of the traveling wave electrode modulator according to claim 1, wherein a plurality of test devices are further prepared on the wafer, the plurality of test devices are distributed at different positions in the wafer surface, and characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface are obtained by testing the test devices.
5. The method for controlling an integrated termination resistor of a traveling wave electrode modulator according to claim 1, wherein the material layer constituting the termination resistor comprises a metal layer, a metal compound layer or a doped silicon layer.
6. The method for adjusting and controlling the integrated termination resistance of the traveling wave electrode modulator according to claim 1, further comprising the step of obtaining a prediction model of the variation of the characteristic parameter along with the position in the wafer plane through the characteristic parameter after obtaining the characteristic parameter of the different positions in the wafer plane.
7. The method for adjusting and controlling the integrated termination resistance of the traveling wave electrode modulator according to claim 1, further comprising the step of obtaining the prediction model of the traveling wave electrode impedance and the resistance sheet resistance at different positions in the wafer plane through the characteristic parameters after obtaining the characteristic parameters at the different positions in the wafer plane.
8. The method for regulating and controlling an integrated termination resistor of a traveling wave electrode modulator according to claim 1, wherein the termination resistor comprises a thin film resistor; the method for trimming the resistance value of the termination resistor comprises the following steps: and removing part of the area of the thin film resistor by adopting laser so as to reduce the cross-sectional area of at least part of the area in the thin film resistor in the conductive direction.
9. The method for regulating and controlling an integrated termination resistor of a traveling wave electrode modulator according to claim 1, wherein the termination resistor comprises a parallel circuit formed by a plurality of sub resistors; the method for trimming the resistance value of the termination resistor comprises the following steps: at least one of the sub-resistances is disconnected from the parallel circuit of termination resistances.
10. The method for adjusting and controlling an integrated termination resistor of a traveling wave electrode modulator according to claim 9, wherein the method for adjusting and controlling the resistance of the termination resistor comprises: laser ablation is employed to turn off at least one of the sub-resistors.
11. The method for adjusting and controlling an integrated termination resistor of a traveling wave electrode modulator according to claim 9, wherein the method for adjusting and controlling the resistance of the termination resistor comprises: laser cutting is used to break the connection line of at least one of the sub-resistors.
12. A regulation and control system for an integrated termination resistor of a traveling wave electrode modulator, comprising:
Preparing a wafer with a plurality of traveling wave electrode modulators, wherein the traveling wave electrode modulators are distributed at different positions in the wafer surface;
the characteristic parameter testing module is used for testing and obtaining characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface;
The resistance value determining module is connected with the characteristic parameter testing module and is used for acquiring the characteristic parameters from the characteristic parameter testing module and determining ideal resistance values of termination resistors of the traveling wave electrode modulators at different positions in the wafer surface;
and the resistance trimming module is used for trimming the resistance of the termination resistor by adopting laser treatment according to the ideal resistance.
13. The system for tuning the integrated termination resistance of a traveling wave electrode modulator of claim 12, wherein the characteristic parameters tested by the characteristic parameter testing module comprise: line width, thickness and sheet resistance of the material layer constituting the termination resistor.
14. The regulation and control system for an integrated termination resistor of a traveling wave electrode modulator of claim 13, wherein the traveling wave electrode modulator comprises a silicon-based modulator; the characteristic parameters further include: PN junction capacitance value and PN junction series resistance value of unit length of PN junction for electro-optical modulation.
15. The system for regulating and controlling the integrated termination resistance of the traveling wave electrode modulator according to claim 12, wherein a plurality of test devices are further prepared on the wafer, the plurality of test devices are distributed at different positions in the wafer surface, and the characteristic parameters of the traveling wave electrode modulator at different positions in the wafer surface are obtained by testing the test devices.
16. The tuning system of claim 12, wherein the material layer comprising the termination resistor comprises a metal layer, a metal compound layer, or a doped silicon layer.
17. The tuning system for a traveling wave electrode modulator integrated termination resistor of claim 12, wherein the termination resistor comprises a thin film resistor; the thin film resistor is provided with a resistance trimming area which traverses the thin film resistor; the resistance trimming module comprises a laser; the method for trimming the resistance value of the termination resistor by the resistance value trimming module comprises the following steps: and removing the thin film resistor on the resistance trimming area by laser of a laser so as to reduce the cross section area of the resistance trimming area in the conductive direction.
18. The regulation system of the traveling wave electrode modulator integrated termination resistor of claim 12, wherein the termination resistor comprises a parallel circuit of a plurality of sub-resistors; the method for trimming the resistance value of the termination resistor by the resistance value trimming module comprises the following steps: at least one of the sub-resistances is disconnected from the parallel circuit of termination resistances.
19. The tuning system of the traveling wave electrode modulator integrated termination resistor of claim 18, wherein the resistance trimming module comprises a laser; the sub-resistor includes a truncated region traversing the sub-resistor; the method for trimming the resistance value of the termination resistor comprises the following steps: cutting the cut-off region by a laser to cut off at least one of the sub-resistors.
20. The tuning system of the traveling wave electrode modulator integrated termination resistor of claim 18, wherein the resistance trimming module comprises a laser; the two ends of the sub resistor are connected to the connecting wire; the method for trimming the resistance value of the termination resistor comprises the following steps: cutting off a connecting wire at one end of at least one of the sub-resistors by laser to disconnect at least one of the sub-resistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011269494.5A CN112394546B (en) | 2020-11-13 | 2020-11-13 | Method and system for regulating and controlling integrated termination resistance of traveling wave electrode modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011269494.5A CN112394546B (en) | 2020-11-13 | 2020-11-13 | Method and system for regulating and controlling integrated termination resistance of traveling wave electrode modulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112394546A CN112394546A (en) | 2021-02-23 |
| CN112394546B true CN112394546B (en) | 2024-06-18 |
Family
ID=74600335
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011269494.5A Active CN112394546B (en) | 2020-11-13 | 2020-11-13 | Method and system for regulating and controlling integrated termination resistance of traveling wave electrode modulator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112394546B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108459653A (en) * | 2018-05-22 | 2018-08-28 | 龙迅半导体（合肥）股份有限公司 | A kind of terminating resistor calibration circuit and its control method |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4184405B2 (en) * | 2004-03-18 | 2008-11-19 | 日本電信電話株式会社 | Optical modulator and optical modulation method |
| US7940077B2 (en) * | 2006-09-05 | 2011-05-10 | Lecroy Corporation | Adjustable resistance |
| JP6063903B2 (en) * | 2014-06-30 | 2017-01-18 | 株式会社フジクラ | High frequency circuit and optical modulator |
| CN104409420B (en) * | 2014-10-11 | 2017-06-06 | 北京工业大学 | The preparation technology of Pt thin-film thermistors on a kind of GaAs power devices, the piece of microwave monolithic circuit |
| CN111384053B (en) * | 2018-12-29 | 2022-08-05 | 中芯集成电路（宁波）有限公司 | Microcontroller and manufacturing method thereof |
| CN110161625B (en) * | 2019-05-17 | 2021-03-30 | 上海交通大学 | Array integration method of silicon-based lithium niobate thin film electro-optic modulator |
| CN111176053B (en) * | 2020-02-19 | 2021-07-27 | 上海交通大学 | Monolithic integrated optical analog-to-digital conversion system and preparation method based on lithium niobate-silicon wafer |
| CN111290145B (en) * | 2020-03-03 | 2023-07-18 | 联合微电子中心有限责任公司 | High-speed modulator based on annular reflector |
-
2020
- 2020-11-13 CN CN202011269494.5A patent/CN112394546B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108459653A (en) * | 2018-05-22 | 2018-08-28 | 龙迅半导体（合肥）股份有限公司 | A kind of terminating resistor calibration circuit and its control method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112394546A (en) | 2021-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3974443A (en) | Conductive line width and resistivity measuring system | |
| US6717426B2 (en) | Blade-like connecting needle | |
| KR950013898B1 (en) | Manufacturing Method of Semiconductor Device | |
| JP4550457B2 (en) | Semiconductor device and manufacturing method thereof | |
| US20100059896A1 (en) | Coplaner waveguide and fabrication method thereof | |
| KR100381151B1 (en) | Semiconductor device for alignment detection | |
| CN112394546B (en) | Method and system for regulating and controlling integrated termination resistance of traveling wave electrode modulator | |
| US9553084B2 (en) | Switching element, semiconductor device, and semiconductor device manufacturing method | |
| US5557214A (en) | Micro beam probe semiconductor test interface | |
| CN116360223A (en) | Measurement pattern structure and method of using the same | |
| US12292625B2 (en) | Building block for electro-optical integrated indium-phosphide based phase modulator | |
| US7205880B2 (en) | Trimmer impedance component, semiconductor device and trimming method | |
| US6456082B2 (en) | Method for polysilicon crystalline line width measurement post etch in undoped-poly process | |
| US20010003050A1 (en) | Method of fabricating semiconductor device | |
| CN108807519B (en) | Electronic Fabry-Perot interference device and preparation method thereof | |
| CN112864091A (en) | Manufacturing method of 25Gbs high-speed modulation DFB laser chip | |
| CN107068580B (en) | Wafer level electrical testing for optical proximity correction and/or etch bias | |
| JP3818903B2 (en) | Element for measuring alignment error of semiconductor device | |
| US20080218249A1 (en) | Semiconductor device and trimming method therefor | |
| WO2024247010A1 (en) | Monitor circuit | |
| WO2024247015A1 (en) | Monitor circuit | |
| KR20010039899A (en) | Teg pattern for evaluating plasma damage | |
| US5786627A (en) | Integrated circuit device and fabricating thereof | |
| JP3641348B2 (en) | Manufacturing method of semiconductor devices | |
| KR19980017374A (en) | Manufacturing Method of Antistatic Liquid Crystal Display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |