CN112382698A - 适用于碱抛工艺单晶perc-se双面电池制作方法 - Google Patents
适用于碱抛工艺单晶perc-se双面电池制作方法 Download PDFInfo
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Abstract
本发明涉及太阳能电池生产领域。适用于碱抛工艺单晶PERC‑SE双面电池制作方法，顺序按照清洗制绒、扩散制结、激光掺杂、PSG+碱抛、二氧化硅层制备、背钝化膜制备、正面氮化硅层制备、背面激光开槽、正背面电极制备的工艺步骤制备，二氧化硅层制备时，采用热氧化方法在硅片正、背面沉积一层二氧化硅薄膜，其中，热氧化温度：300‑900℃，氧气流量：100‑10000sccm，时间：2‑50min。采用碱抛SE工艺，SE实现降低硅片和电极之间的接触电阻，又降低了表面的复合，提高了少子寿命，使得短路电流、开路电压和填充因子都能得到较好的改善，从而提高转换效率。
Description
技术领域
本发明涉及太阳能电池生产领域。
背景技术
随着光伏发电技术的不断发展，各种新型高效的太阳能电池层出不穷。尤其随着平价上网时代的到来，如何制作更加高效稳定的电池及成本最低化成为光伏行业的首要任务。碱抛工艺单晶PERC-SE双面电池正反面都可以接受光照，双面均可发电，提升了单位面积的电量输出，大大提升了电池片的利用率。同时，叠加了SE，使金属栅线与硅片接触部位及其附近进行高浓度掺杂，而在电极以外的区域进行低浓度掺杂。这样的结构既降低了硅片和电极之间的接触电阻，又降低了表面的复合，提高了少子寿命，使得短路电流、开路电压和填充因子都能得到较好的改善，从而提高转换效率。
同时，匹配的是碱抛工艺，碱抛工艺与酸刻蚀工艺相比，碱抛工艺的温度是30-120℃，时间是10-1000s，所用的碱抛光液中KOH体积比为1％-50％、抛光添加剂的体积比为1％-50％。常规酸抛光配方必须使用大量的HNO3和HF，才能保证抛光效果，碱抛光可以避免使用HNO3和HF，大大降低了含N污水的排放，为污水处理降低了很大成本同时也保护了环境。
发明内容
本发明所要解决的技术问题是：如何实现碱抛工艺叠加SE的PERC双面电池，从而提高了电池转化效率、提高了电池的利用率同时降低了制造成本。
本发明所采用的技术方案是：适用于碱抛工艺单晶PERC-SE双面电池制作方法，顺序按照清洗制绒、扩散制结、激光掺杂、PSG+碱抛、二氧化硅层制备、背钝化膜制备、正面氮化硅层制备、背面激光开槽、正背面电极制备的工艺步骤制备，二氧化硅层制备时，采用热氧化方法在硅片正、背面沉积一层二氧化硅薄膜，其中，热氧化温度：300-900℃，氧气流量：100-10000sccm，时间：2- 50min；背钝化膜制备时，使用管式PECVD法在硅片背面制备Alx1Oy1/ Six2Ny2Oz/Six3Ny3叠层膜，其中，Alx1Oy1膜厚度为3-50nm，折射率：1.0--5.0；Six2Oy2Nz膜厚度：10-100nm，折射率：1.0-5.0；Six3Ny3膜厚度：20-200nm，折射率：1.0-5.0，其中，x1、y1、z、x2、y2、x3、y3为分子式中的原子个数。
Alx1Oy1膜、Six2Oy2Nz膜、Six3Ny3膜的折射率相同；Alx1Oy1膜工艺条件为，温度在100-800度、时间5-1000s、TMA10-500sccm、笑气100-10000sccm、压力100-5000pa、功率500-30000、占空比1/3——1/1000；Six2Oy2Nz膜工艺条件为，温度100-800度、时间30-2000s、笑气100-10000sccm、氨气100-20000sccm、压力100-5000pa、功率500-30000、占空比1/3——1/1000；Six3Ny3膜的工艺条件为，温度100-800度、时间100-2000s、硅烷100-10000sccm、氨气100-20000sccm、压力100-5000pa、功率500-30000、占空比1/3——1/1000。
背面激光开槽时，利用激光相融原理进行背面钝化膜局部开槽，背面激光图形参数为：线数：50-200根；光斑直径：5-100μm，激光线的间距：100-10000μm；激光功率：5-100W。
正背面电极制备的工艺步骤制备时，背面印刷背面电极和铝栅线，采用铝栅线宽度100-10000um的网版，通过抓取Mark点定位使其铝栅线完全将激光槽覆盖，副栅根数：50-200根；正面印刷正面电极银栅线，采用银栅线宽度15-75um的网版，通过抓取Mark点定位使其银栅线完全填充在Laser激光光斑内，再经过高温烧结，制得单晶PERC双面电池。
本发明的有益效果是：采用碱抛SE工艺，SE实现降低硅片和电极之间的接触电阻，又降低了表面的复合，提高了少子寿命，使得短路电流、开路电压和填充因子都能得到较好的改善，从而提高转换效率。与常规酸抛光相比，酸抛光配方必须使用大量的HNO3和HF，才能保证抛光效果，碱抛光可以避免使用HNO3和HF，大大降低了含N污水的排放，为污水处理降低了很大成本同时也保护了环境。采用正面采用二氧化硅膜+氮氧化硅膜结构代替常规单一氮化硅膜层，折射率可调控，可有效解决正面PID问题；，此外，可以吸收更多的入射光，增加光生载流子，提高电池短路电流；背面采用AlxOy/SixNyOz/SixNy叠层膜，通过改进的工艺，降低了单晶PERC电池背表面界面态的复合速率，提升了电池背表面的钝化效果,同时具有很好的化学稳定性和很强的抗杂质扩散和水汽渗透能力；SixNy薄膜硬度高，具有优越的机械性能、热特性、抗腐蚀性、耐磨性及抗辐射性，化学性能更稳定；SixNyOz/SixNy膜层相比常规SiNx膜层，可有效解决背面PID问题，此外，SixNyOz/SixNy膜层的折射率可根据不同反应气体的比例而变化，具有良好的光学和电学特性。
具体实施方式
一种适用于碱抛工艺单晶PERC-SE双面电池制作方法，包括以下步骤：
清洗制绒：选取电阻率为0 .1～4Ω·cm的轻掺杂的p型单晶硅片，对P型硅进行碱制绒，在碱溶液下经过各向异性腐蚀形成双面金字塔状的减反射绒面，制绒减重范围0.1～1g，反射率：5%-20%。
扩散制结：采用液态磷源法置于500～900℃的炉管中进行P(磷)扩散，时间为20min—12min，在硅片表面形成PSG层，即形成N型发射极，再进行低温P(磷)扩散，保证PSG中存在一定比例的磷原子，为激光掺杂提供磷源，低温P(磷)扩散的温度500～900℃，时间2min-50min；形成PN结，方阻：50-170Ω。
激光掺杂，采用激光掺杂方法在正面电极区域形成重掺区，方阻为：20-120Ω；其中，Laser参数：光斑为70-160um的正方形、激光能量为200-1500、激光频率50-1000HZ、雕刻速度1000-50000；
去PSG+碱抛：去PSG去除电池片背面磷硅玻璃及氧化层；碱抛，通过采用无极碱（KOH/NaOH）在刻蚀工艺中对硅片背面及边缘进行刻蚀抛光处理，减重0.05-1.0g，背面反射率：15-55%；
二氧化硅层制备：通入适量的高纯度氧气，采用热氧化方法在硅片正、背面沉积一层二氧化硅薄膜，其中，热氧化温度：300-900℃，氧气流量：100-10000sccm，时间：2-50min；
背钝化膜制备：使用管式PECVD法在硅片背面制备AlxOy/ SixNyOz /SixNy叠层膜，其中，AlxOy膜厚度为3-50nm，折射率：1 .0--5.0；采用不同比例均匀混合的SiH4、NH3和N2O制备SixNyOz膜，厚度：10-100nm，折射率：1.0-5.0；采用不同比例均匀混合的SiH4和NH3制备SixNy膜，厚度：20-200nm，折射率：1.0-5.0；使用管式PECVD法在硅片背面制备AlxOy/SixOyNz /SixNy叠层膜，
正面氮化硅层制备：至少一层膜结构的正面氮化硅层制备的条件为：沉积温度：100-800℃，SiH4流量：100-10000sccm，NH3流量：100-20000sccm，压力 ：100-5000pa，沉积时间：100-2000s；占空比1/3——1/1000；；
背面激光开槽：利用激光相融原理进行背面钝化膜局部开槽，背面激光图形参数为：线数：50-200根；光斑直径：5-100μm，激光线的间距：100-10000μm；激光功率：5-100W；
正、背面电极制备：背面印刷背面电极和铝栅线，采用铝栅线宽度100-10000um的网版，通过抓取Mark点定位使其铝栅线完全将激光槽覆盖，副栅根数：50-200根；正面印刷正面电极银栅线，采用银栅线宽度15-75um的网版，通过抓取Mark点定位使其银栅线完全填充在Laser激光光斑内，再经过高温烧结，制得单晶PERC双面电池。
去PSG+碱抛，采用去PSG+碱抛设备，碱抛工艺与酸刻蚀工艺相比，碱抛工艺的温度是30-120℃，时间是10-1000s，所用的碱抛光液中KOH体积比为1％-50％、抛光添加剂的体积比为1％-50％。常规酸抛光配方必须使用大量的HNO3和HF，才能保证抛光效果，碱抛光可以避免使用HNO3和HF，大大降低了含N污水的排放，为污水处理降低了很大成本同时也保护了环境。
正、背面电极制备，采用有色光源对硅片进行拍照抓取硅片上预先制备的Mark点，从而进行精确定位，实现，铝栅线将激光开的槽全部覆盖住，烧结后实现良好的欧姆接触；实现，银栅线能够完全填充在步骤W3Laser制备的光斑内实现降低硅片和电极之间的接触电阻，又降低了表面的复合，提高了少子寿命，使得短路电流、开路电压和填充因子都能得到较好的改善，从而提高转换效率。
Claims (4)
1.适用于碱抛工艺单晶PERC-SE双面电池制作方法，其特征在于：顺序按照清洗制绒、扩散制结、激光掺杂、PSG+碱抛、二氧化硅层制备、背钝化膜制备、正面氮化硅层制备、背面激光开槽、正背面电极制备的工艺步骤制备，二氧化硅层制备时，采用热氧化方法在硅片正、背面沉积一层二氧化硅薄膜，其中，热氧化温度：300-900℃，氧气流量：100-10000sccm，时间：2- 50min；背钝化膜制备时，使用管式PECVD法在硅片背面制备Alx1Oy1/ Six2Ny2Oz/Six3Ny3叠层膜，其中，Alx1Oy1膜厚度为3-50nm，折射率：1.0--5.0；Six2Oy2Nz膜厚度：10-100nm，折射率：1.0-5.0；Six3Ny3膜厚度：20-200nm，折射率：1.0-5.0，其中，x1、y1、z、x2、y2、x3、y3为分子式中的原子个数。
2.根据权利要求1所述的适用于碱抛工艺单晶PERC-SE双面电池制作方法，其特征在于：Alx1Oy1膜、Six2Oy2Nz膜、Six3Ny3膜的折射率相同；Alx1Oy1膜工艺条件为，温度在100-800度、时间5-1000s、TMA10-500sccm、笑气100-10000sccm、压力100-5000pa、功率500-30000、占空比1/3——1/1000；Six2Oy2Nz膜工艺条件为，温度100-800度、时间30-2000s、笑气100-10000sccm、氨气100-20000sccm、压力100-5000pa、功率500-30000、占空比1/3——1/1000；Six3Ny3膜的工艺条件为，温度100-800度、时间100-2000s、硅烷100-10000sccm、氨气100-20000sccm、压力100-5000pa、功率500-30000、占空比1/3——1/1000。
3.根据权利要求1所述的适用于碱抛工艺单晶PERC-SE双面电池制作方法，其特征在于：背面激光开槽时，利用激光相融原理进行背面钝化膜局部开槽，背面激光图形参数为：线数：50-200根；光斑直径：5-100μm，激光线的间距：100-10000μm；激光功率：5-100W。
4.根据权利要求1所述的适用于碱抛工艺单晶PERC-SE双面电池制作方法，其特征在于：正背面电极制备的工艺步骤制备时，背面印刷背面电极和铝栅线，采用铝栅线宽度100-10000um的网版，通过抓取Mark点定位使其铝栅线完全将激光槽覆盖，副栅根数：50-200根；正面印刷正面电极银栅线，采用银栅线宽度15-75um的网版，通过抓取Mark点定位使其银栅线完全填充在Laser激光光斑内，再经过高温烧结，制得单晶PERC双面电池。
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