[go: up one dir, main page]

CN112382334A - Testing device and testing method for mobile memory - Google Patents

Testing device and testing method for mobile memory Download PDF

Info

Publication number
CN112382334A
CN112382334A CN202011230058.7A CN202011230058A CN112382334A CN 112382334 A CN112382334 A CN 112382334A CN 202011230058 A CN202011230058 A CN 202011230058A CN 112382334 A CN112382334 A CN 112382334A
Authority
CN
China
Prior art keywords
test
memory
tested
application processor
boards
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202011230058.7A
Other languages
Chinese (zh)
Inventor
张磊
陈世兴
颜振亮
罗文良
姜文贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Runsheng System Testing Shenzhen Co ltd
Original Assignee
Runsheng System Testing Shenzhen Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Runsheng System Testing Shenzhen Co ltd filed Critical Runsheng System Testing Shenzhen Co ltd
Priority to CN202011230058.7A priority Critical patent/CN112382334A/en
Priority to TW109141769A priority patent/TWI789651B/en
Priority to TW109215680U priority patent/TWM609546U/en
Publication of CN112382334A publication Critical patent/CN112382334A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

本发明提供一种用于行动内存的内存测试装置以及内存测试方法。内存测试装置包括主机以及多个测试板。主机提供多个测试流程。所述多个待测内存芯片以一对一方式或多对一方式被对应设置在所述多个测试板上。各所述多个测试板包括至少一应用处理器。应用处理器分別一对一方式与对应待测内存芯片直接连接。被启动后的各所述多个测试板的应用处理器接收储存在对应测试板的所述多个测试流程的至少其中之一,并基于所述多个测试流程的至少其中之一对对应待测内存芯片进行测试。

Figure 202011230058

The present invention provides a memory testing device and a memory testing method for mobile memory. The memory test device includes a host and a plurality of test boards. The host provides multiple test flows. The plurality of memory chips to be tested are correspondingly arranged on the plurality of test boards in a one-to-one manner or a multi-to-one manner. Each of the plurality of test boards includes at least one application processor. The application processors are directly connected to the corresponding memory chips to be tested in a one-to-one manner. The activated application processor of each of the plurality of test boards receives at least one of the plurality of test procedures stored in the corresponding test board, and based on at least one of the plurality of test procedures, corresponds to the corresponding test procedure. Test the memory chip.

Figure 202011230058

Description

Testing device and testing method for mobile memory
Technical Field
The present invention relates to a test apparatus and a test method, and more particularly, to a memory test apparatus and a memory test method capable of testing a plurality of memory chips to be tested.
Background
Generally, a memory test device uses a single motherboard to test at least one memory chip under test. In order to test a plurality of memory chips to be tested, the testing apparatus may test the plurality of memory chips to be tested simultaneously by a testing host. Based on the large increase in the demand of the memory chips, the testing apparatus needs to further accelerate the test throughput (throughput) of the memory chips to be tested, and can also test the memory chips to be tested simultaneously with different test conditions. The above-mentioned need is one of the subjects which the skilled person endeavors to investigate.
Disclosure of Invention
The invention provides a memory test device and a memory test method, which can accelerate the test output of a plurality of memory chips to be tested and can automatically test the plurality of memory chips to be tested simultaneously by using different test conditions.
The memory test device is used for testing a plurality of memory chips to be tested. The memory test device comprises a host and a plurality of test boards. The host is configured to provide a plurality of test flows. The test boards are respectively coupled to the host to receive the test flows and store the test flows. The memory chips to be tested are correspondingly arranged on the test boards in a one-to-one mode or a many-to-one mode. Each of the plurality of test boards includes at least one application processor. The at least one application processor is respectively directly connected with the corresponding memory chips to be tested in the plurality of memory chips to be tested in a one-to-one mode. The at least one application processor is a reduced instruction set processor. The at least one application processor of each of the plurality of test boards after being started receives at least one of the plurality of test procedures stored on the corresponding test board, and tests the corresponding memory chip to be tested based on the at least one of the plurality of test procedures.
The memory test method is used for testing a plurality of memory chips to be tested by the memory test device. The memory test device comprises a plurality of test boards. Each of the plurality of test boards includes at least one application processor. The at least one application processor is a reduced instruction set processor. The memory test method comprises the following steps: storing a plurality of test procedures by the plurality of test boards; correspondingly arranging the memory chips to be tested on a plurality of test boards in a one-to-one mode or a many-to-one mode, so that each application processor is directly connected with the corresponding memory chip to be tested in the memory chips to be tested in a one-to-one mode; and receiving at least one of a plurality of test procedures stored on the corresponding test board by the at least one application processor of each of the plurality of test boards after being started, and testing the corresponding memory chip to be tested based on at least one of the plurality of test procedures.
Based on the above, the memory test apparatus and the memory test method of the present invention enable the memory chips to be tested to be correspondingly disposed on the plurality of test boards in a one-to-one manner or a many-to-one manner, and the application processor is directly connected to the corresponding memory chips to be tested in a one-to-one manner. Therefore, the application processor can directly perform one-to-one test on the corresponding memory chip to be tested. Therefore, the invention can accelerate the test output of a plurality of memory chips to be tested and can automatically test the plurality of memory chips to be tested simultaneously under different test conditions.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a schematic diagram illustrating an apparatus of a memory test apparatus according to an embodiment of the invention;
fig. 2 is a flowchart illustrating a method of testing a memory according to an embodiment of the invention;
FIG. 3 is a diagram illustrating a host according to an embodiment of the invention;
FIG. 4 is a schematic diagram of a testing board according to an embodiment of the present invention;
fig. 5 is a flowchart illustrating another method for testing a memory according to an embodiment of the invention.
Description of the reference numerals
100: a memory test device;
110: a host;
111: an operating system;
112: a writing tool;
113: a database;
120_1 to 120_ n: a test board;
121_1 to 121_ n: an application processor;
122_ 1: a storage circuit;
123_ 1: testing the power supply;
124_ 1: an adapter;
1231: a power management controller;
1232: a voltage regulator;
130: a sorter;
ADD: testing the address;
CMD: a test command;
CS: a control signal;
DP _ 1: a drive power supply;
DAT1, DAT 2: data;
DUT _1 to DUT _ n: a memory chip to be tested;
EP: an external power supply;
TI _1 to TI _ n: testing information;
TP 01-TP 40: testing process;
s100, S200: a memory test method;
s110 to S130: a step of;
s201 to S212: a step of;
VDD1, VDD2, VDDQ: and testing the power supply.
Detailed Description
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
Referring to fig. 1, fig. 1 is a schematic device diagram illustrating a memory test apparatus according to an embodiment of the invention. In this embodiment, the memory test apparatus 100 is suitable for testing the memory chips DUT _1 to DUT _ n to be tested. The memory test device 100 includes a host 110 and test boards 120_1 to 120_ n. The host 110 may provide 40 test flows TP 01-TP 40 (the number of test flows is not limited in the present invention). The host 110 may be any type of central control electronic device, such as an industrial computer, a notebook computer, or a personal computer with an operation interface. In this embodiment, the Memory chips DUT _1 to DUT _ n are Dynamic Random Access Memory (DRAM) chips applied to the mobile electronic device, respectively. Further, the memory chips DUT _1 to DUT _ n to be tested are Low Power Double Data Rate (LPDDR) dram chips, such as LPDDR4, LPDDR4X, LPDDR5 or higher specification dram chips, respectively. In this embodiment, n may be any integer greater than 2 (e.g., 128 or 256).
In the present embodiment, the test boards 120_1 to 120_ n are respectively coupled to the host 110. The testing boards 120_1 to 120_ n receive the testing processes TP01 to TP40 from the host 110, respectively, and store the testing processes TP01 to TP40, respectively. In the present embodiment, the memory chips DUT _1 to DUT _ n to be tested are correspondingly disposed on the test boards 120_1 to 120_ n in a one-to-one manner or a many-to-one manner. For example, the test boards 120_ 1-120 _ n can communicate with the host 110 through any type of communication interface (e.g., USB, UART, WiFi, etc.). The memory chip under test DUT _1 is disposed on the test board 120_ 1. The memory chip under test DUT _2 is disposed on the test board 120_2, and so on.
In the present embodiment, each of the test boards 120_ 1-120 _ n includes an Application Processor (Application Processor)121_ 1-121 _ n. The application processors 121_ 1-121 _ n are directly connected with the corresponding memory chips DUT _ 1-DUT _ n to be tested. For example, on the test board 120_1, the application processor 121_1 is directly connected to the memory chip under test DUT _ 1. On the test board 120_2, the application processor 121_2 is directly connected to the memory chip under test DUT _2, and so on. In the embodiment, the application processors 121_1 to 121_ n receive at least one of the test flows TP01 to TP40 stored in the corresponding test boards 120_1 to 120_ n, and test the corresponding memory chips DUT _1 to DUT _ n to be tested based on the received at least one of the test flows TP01 to TP 40. In the embodiment, the application processors 121_1 to 121_ n are processors (e.g., ARM processors) conforming to various versions of Reduced Instruction Set (RISC/RISC-V) standards.
For example, the application processor 121_1 receives the test procedures TP 01-TP 20 stored in the test board 120_1, and tests the memory chip DUT _1 according to the test procedures TP 01-TP 20. The application processor 121_2 receives the testing processes TP 01-TP 20 stored in the testing board 120_2, and tests the memory chip DUT _2 to be tested according to the testing processes TP 01-TP 20. The application processor 121_ n receives the testing processes TP 30-TP 40 stored in the testing board 120_ n, and tests the memory chip DUT _ n to be tested according to the testing processes TP 30-TP 40.
It should be noted that the memory chips DUT _1 to DUT _ n to be tested are correspondingly disposed on the test boards 120_1 to 120_ n in a one-to-one manner. The application processors 121_1 to 121_ n respectively disposed on the test boards 120_1 to 120_ n are directly connected to the corresponding memory chips DUT _1 to DUT _ n to be tested in a one-to-one manner. Therefore, the application processors 121_1 to 121_ n can directly perform one-to-one test on the corresponding memory chips DUT _1 to DUT _ n to be tested. Compared to Application Specific Integrated Circuits (ASICs) or Field Programmable Gate Arrays (FPGAs) used in a general test apparatus, the Application processors 121_1 to 121_ n of the present embodiment have higher processing performance. In this way, the memory test apparatus 100 can accelerate the test throughput of the memory chips DUT _1 to DUT _ n to be tested, and can automatically test the memory chips DUT _1 to DUT _ n to be tested simultaneously under different test conditions.
In this embodiment, the memory test apparatus 100 can also automatically test the memory chips DUT _1 to DUT _ n to be tested through different test flows with different test speeds to obtain test results corresponding to the different test speeds. The memory test apparatus 100 also classifies the memory chips DUT _1 to DUT _ n to be tested based on the test results corresponding to the different test speeds.
In addition, the application processors 121_1 to 121_ n are processors conforming to various versions of the reduced instruction set. Compared with the CPU, the application processors 121_1 to 121_ n of the present embodiment have lower cost. Therefore, the cost of the memory test apparatus 100 can be reduced. In addition, the automatic test of the application processors 121_1 to 121_ n for testing the memory chips DUT _1 to DUT _ n is close to the access of the mobile device to the memory chips.
In this embodiment, the application processor 121_1 tests the memory chip DUT _1 to be tested to obtain the test information TI _1, and provides the obtained test information TI _1 to the host 110. The test information TI _1 is information for representing whether the memory chip DUT _1 under test passes the test. The application processor 121_2 tests the memory chip under test DUT _2 to obtain test information TI _2, and provides the obtained test information TI _2 to the host 110. The test information TI _2 is used to represent whether the memory chip DUT _2 under test passes the test, and so on.
In this embodiment, the memory test apparatus 100 further includes a sorter 130. The sorter 130 may be coupled to the host 110 via a wired or wireless communication interface. In the present embodiment, the communication interface is, for example, RJ45 (the invention is not limited thereto). The memory test apparatus 100 is capable of correspondingly disposing the memory chips DUT _1 to DUT _ n to be tested on the test boards 120_1 to 120_ n in a one-to-one manner by the sorter 130. The host 110 instructs the sorter 130 to sort the memory chips DUT _1 to DUT _ n to be tested according to the test information TI _1 to TI _ n.
For example, the test information TI _1 represents that the memory chip DUT _1 under test Passes (PASS). The test information TI _2 represents that the memory chip under test DUT _2 passes the test (PASS). The test information TI _ n indicates that the memory chip DUT _ n under test FAILs the test (FAIL). After the test is finished, the host 110 controls the classifier 130 according to the test information TI _1, TI _2, TI _ n. The handler 130 takes the memory chip under test DUT _1 out of the test board 120_1 in response to the control of the host 110 and moves the memory chip under test DUT _1 to a first tray (not shown). The first tray is a tray for receiving memory modules that PASS a test (PASS). The handler 130 takes the memory chip under test DUT _2 out of the test board 120_2 and moves the memory chip under test DUT _2 to the first tray. The sorter 130 takes the memory chip under test DUT _ n out of the test board 120_ n and moves the memory chip under test DUT _ n to a second tray (not shown). The second tray is a tray for receiving memory modules that FAIL a test (FAIL).
In some embodiments, at least one of the test boards 120_ 1-120 _ n may each include a plurality of application processors. Here, the test board 120_1 includes 3 application processors for example. The 3 memory chips to be tested are correspondingly arranged on the test board 120_1 in a many-to-one manner. The 3 application processors disposed in the test board 120_1 test the 3 memory chips to be tested in a one-to-one manner. For example, the first application processor of the 3 application processors tests the first to-be-tested memory chip of the 3 to-be-tested memory chips. And a second application processor in the 3 application processors tests a second memory chip to be tested in the 3 memory chips to be tested. And the third application processor in the 3 application processors tests a third memory chip to be tested in the 3 memory chips to be tested.
Referring to fig. 1 and fig. 2, fig. 2 is a flowchart illustrating a method for testing a memory according to an embodiment of the invention. In the embodiment, the memory test method S100 is applicable to the memory test apparatus 100. In step S110, the test boards 120_1 to 120_ n receive the test flows TP01 to TP40, respectively. In the case where no additional test flow is generated, step S110 may not be performed any more. Once the new test flow is generated, the host 110 can execute step S110 according to the actual test requirement, so as to provide the new test flow to the test boards 120_1 to 120_ n. In step S120, the memory chips DUT _1 to DUT _ n to be tested are correspondingly disposed on the test boards 120_1 to 120_ n in a one-to-one manner, or are correspondingly disposed on at least one of the test boards 120_1 to 120_ n in a many-to-one manner, so that the application processors 121_1 to 121_ n are directly connected to the corresponding memory chips DUT _1 to DUT _ n to be tested in a one-to-one manner, respectively. The implementation details of steps S110 and S120 can be sufficiently taught or explained in the related embodiment of fig. 1, and therefore cannot be reiterated here. In step S130, the memory test device 100 attempts to boot up the test boards 120_1 to 120_ n. If the memory test device 100 knows that at least one of the test boards 120_ 1-120 _ n cannot be activated, the memory test device 100 determines that the test board that cannot be activated is Failed (FAIL) and cannot be tested. The application processor of the test board successfully started receives at least one of the test flows TP 01-TP 40 stored in the test board, and tests the corresponding memory chip to be tested based on at least one of the test flows TP 01-TP 40. For example, taking test board 120_1 as an example, if test board 120_1 successfully boots up, application processor 121_1 receives test flows TP 01-TP 20 stored in test board 120_1, and tests the memory chip DUT _1 under test based on test flows TP 01-TP 20.
It should be noted that, before testing, the test flows TP 01-TP 40 are pre-stored in test board 120_ 1. Therefore, once the test board 120_1 is successfully booted, the application processor 121_1 obtains the test procedures TP 01-TP 20 from the test board 120_1, instead of obtaining the test procedures TP 01-TP 20 from the host 110. Thus, the time for the application processor 121_1 to obtain the test flows TP 01-TP 20 can be shortened.
In the present embodiment, step S110 is performed before step S120. However, the invention is not limited thereto. In some embodiments, step S110 may be performed between steps S120, S130.
Referring to fig. 1 and fig. 3, fig. 3 is a schematic diagram of a host according to an embodiment of the invention. In the present embodiment, the host 110 includes an operating system 111 and a writing tool 112. The operating system 111 is operated to edit the test flows TP 01-TP 40. The writing tool 112 is coupled to the operating system 111. The write tool 112 is operated to provide the edited test flows TP 01-TP 40 to the test boards 120_ 1-120 _ n in advance. In this embodiment, the host 110 further includes a database 113. The database 113 is coupled to the operating system 111. The database 113 can at least store the edited test flows TP 01-TP 40, the test information TI _ 1-TI _ n of the memory chips DUT _ 1-DUT _ n to be tested, and the statistical results associated with the test information TI _ 1-TI _ n. In this embodiment, the database 113 may be implemented by a server or a storage device. In some embodiments, the database 113 may be located external to the host 110.
Referring to fig. 1 and fig. 4, fig. 4 is a schematic view of a test board according to an embodiment of the invention. In the present embodiment, the test board 120_1 includes an application processor 121_1, a storage circuit 122_1, and a test power supply 123_ 1. The storage circuit 122_1 is coupled to the host 110 and the application processor 121_ 1. The storage circuit 122_1 stores the test flows TP 01-TP 40 from the host 110. The host 110 writes the test flows TP 01-TP 40 into the storage circuit 122_1 through the write tool 112 shown in FIG. 3, for example. After the test board 120_1 is activated, the application processor 121_1 receives the test procedures TP 01-TP 20 from the storage circuit 122_1, for example. In the embodiment, the storage circuit 122_1 may be a Flash memory (Flash memory), for example. In some embodiments, the storage circuit 122_1 may also be implemented by other memories.
For example, the application processor 121_1 can inform the host 110 of the address block to write or record to the storage circuit 122_ 1. Before testing (as step S110 in fig. 2), the host 110 can write or write the test procedures TP 01-TP 40 into a specified address block (e.g., a pre-loader or a lite kernel block in a flash memory) of the storage circuit 122_1 according to the instruction of the application processor 121_ 1. In this way, when starting the test (as step S130 in fig. 2), the application processor 121_1 can receive at least one of the test flows TP 01-TP 40 from the designated address block of the storage circuit 122_ 1.
In the embodiment, the test power supply 123_1 is coupled to the application processor 121_ 1. The test power supply 123_1 provides at least one test power to the memory chip under test DUT _1 in response to the control of the application processor 121_ 1. In the present embodiment, the test power supply 123_1 includes a power management controller 1231 and a voltage regulator 1232. The power management controller 1231 provides the corresponding control signal CS according to one of the test procedures TP 01-TP 20. The voltage regulator 1232 regulates the voltage of the plurality of test power supplies (e.g., VDD1, VDD2, VDDQ, but not limited thereto) to a voltage corresponding to one of the test procedures TP 01-TP 20 according to the control signal CS. For example, during a test period, the power management controller 1231 provides the control signal CS corresponding to the test flow TP01 according to the test flow TP 01. The voltage regulator 1232 adjusts the voltages of the test power supplies VDD1, VDD2, VDDQ to the voltage corresponding to the test flow TP01 according to the control signal CS, and the voltage regulator 1232 further provides the adjusted test power supplies VDD1, VDD2, VDDQ to the memory chip DUT _1 under test.
In addition, during the test process, the application processor 121_1 provides the test command CMD, the test address ADD and the data DAT1 with corresponding timing to the memory chip DUT _1 under test based on one of the test flows TP01 to TP20, and receives the data DAT2 fed back by the memory chip DUT _1 under test. Application processor 121_1 obtains test information TI _1 according to data DAT2 and provides test information TI _1 to host 110. The host 110 determines whether the memory chip DUT _1 under test passes the test according to the test information TI _ 1. In some embodiments, the application processor 121_1 may also determine whether the memory chip DUT _1 under test passes the test according to the test information TI _ 1.
In this embodiment, the test board 120_1 further includes an adapter 124_ 1. The adaptor 124_1 receives the external power EP and converts the external power EP into the driving power DP _1 to drive at least the application processor 121_ 1. That is, the driving power sources of the test boards 120_ 1-120 _ n are independent of each other.
Referring to fig. 1, fig. 4 and fig. 5, fig. 5 is a flowchart illustrating another method for testing a memory according to an embodiment of the invention. In the embodiment, the memory test method S200 is applicable to the memory test apparatus 100. The test board of this embodiment is exemplified by test board 120_ 1. In step S201, the test board 120_1 first receives the test flows TP01 to TP40, and stores the test flows TP01 to TP40 in the storage circuit 122_ 1. In step S202, the memory chip under test DUT _1 is correspondingly disposed on the test board 120_1, such that the application processor 121_1 is directly connected to the memory chip under test DUT _ 1.
In step S203, the test board 120_1 starts to be activated. If the test board 120_1 is not successfully booted, the memory test method S200 proceeds to step S204 to determine that the test board 120_1 fails. On the other hand, if the test board 120_1 is successfully activated, the application processor 121_1 receives at least one of the test procedures TP 01-TP 40 from the storage circuit 122_1 in step S205. In the embodiment, the application processor 121_1 receives the test flow TP01 from the storage circuit 122_1 as an example. In step S205, the application processor 121_1 knows the supply timing of the data DAT1, the supply timing of the test power (e.g., VDD1, VDD2, VDDQ, although the invention is not limited thereto), and the test address ADD based on the test flow TP 01. In step S206, the application processor 121_1 defines a test address range of the test address ADD based on the test flow TP 01. After steps S205 and S206 are completed, the application processor 121_1 tests the memory chip DUT _1 to be tested in step S207. In this embodiment, the test addresses of the test address range may be consecutive or scattered.
In step S207, the application processor 121_1 tests each test address ADD of the memory chip DUT _1 to be tested based on the test flow TP 01. In the test, the application processor 121_1 determines whether the tested address is the last address in the test address range after each test address ADD is tested (step S208). If the application processor 121_1 confirms that the currently tested test address ADD is not the last address in the test address range, it indicates that the test flow TP01 has not yet ended. The application processor 121_1 counts the tested addresses (step S209). On the other hand, if the application processor 121_1 confirms that the current test address ADD is the last address in the test address range, it indicates that the test flow TP01 ends. The application processor 121_1 obtains test information TI _ 1.
For example, in step S207, the application processor 121_1 starts testing a first address in the test address ADD of the memory chip DUT _1 to be tested, and in step S208, determines that the tested first address is not a last address in the test address range. Therefore, the application processor 121_1 counts in step S209 to generate a count value, and goes to step S207 to test the second address in the test address ADD, and determines in step S208 that the tested second address is not the last address in the test address range. Therefore, the application processor 121_1 counts in step S209, and so on. In the present embodiment, it can be seen that, in the case that the tested address is not the last address in the test address range, the application processor 121_1 executes the loop of steps S207 to S209. The operation of counting described above is an Increment (Increment) count. The count value is incremented by 1 every time the loop of steps S207-S209 is executed. Under some test requirements, such as requirements of having a larger test address range or having a longer test time, the test flow TP01 may need to be completed in a segmented manner. Therefore, the application processor 121_1 obtains the count value after completing the first segment test in the test flow TP 01. This count value is associated with the last tested address in the first segment test. In this way, the application processor 121_1 can continue to perform the next segment test in the test flow TP01 according to the count value.
In some embodiments, the operation of counting may be counting by decrementing (Decrement). The application processor 121_1 is capable of determining an initial count value (e.g., a number of bits greater than or equal to the test address range) when defining the test address range for the test address ADD. The count value is decremented by 1 every time the loop of steps S207-S209 is executed. Thus, the count value obtained in the down-count manner may also be associated with the last tested address.
In the present embodiment, the application processor 121_1 provides the test information TI _1 to the host 110 after obtaining the test information TI _ 1. When the memory chip DUT _1 under test is determined to pass the test in step S210, the host 110 determines that the memory chip DUT _1 under test is qualified in step S211. On the other hand, when the memory chip DUT _1 under test is determined not to pass the test in step S210, the host 110 determines the memory chip DUT _1 under test as a fail in step S212.
In summary, the memory test apparatus and the memory test method of the invention enable the memory modules to be tested to be correspondingly disposed on the plurality of test boards in a one-to-one manner. The application processor of the test board is directly connected to the corresponding memory chip to be tested. Therefore, the application processor can directly perform one-to-one test on the memory chips to be tested on each test board. Therefore, the invention can greatly accelerate the test output of a plurality of memory chips to be tested and can automatically test the plurality of memory chips to be tested simultaneously under different test conditions.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (16)

1.一种内存测试装置,用以对多个待测内存芯片进行测试,其特征在于,所述内存测试装置包括:1. a memory testing device, in order to test a plurality of memory chips to be tested, it is characterized in that, described memory testing device comprises: 主机,经配置以提供多个测试流程;以及a host, configured to provide multiple test flows; and 多个测试板,分别耦接于所述主机以接收所述多个测试流程并储存所述多个测试流程,其中所述多个待测内存芯片以一对一方式或多对一方式被对应设置在所述多个测试板上,其中各所述多个测试板包括:a plurality of test boards, respectively coupled to the host to receive the plurality of test procedures and store the plurality of test procedures, wherein the plurality of memory chips to be tested are corresponding to one-to-one or many-to-one set on the multiple test boards, wherein each of the multiple test boards includes: 至少一应用处理器,分別以一对一方式与所述多个待测内存芯片中的对应待测内存芯片直接连接,其中所述至少一应用处理器是精简指令集(Reduced Instruction SetComputer,RISC)处理器,At least one application processor is directly connected to the corresponding memory chip to be tested among the plurality of memory chips to be tested in a one-to-one manner, wherein the at least one application processor is a reduced instruction set (Reduced Instruction Set Computer, RISC) processor, 其中,被启动后的各所述多个测试板的所述至少一应用处理器接收储存在对应测试板上的所述多个测试流程的至少其中之一,并基于所述多个测试流程的至少其中之一,对所述对应待测内存芯片进行测试。Wherein, the at least one application processor of each of the plurality of test boards after being started receives at least one of the plurality of test procedures stored on the corresponding test board, and based on the results of the plurality of test procedures At least one of them is to test the corresponding memory chip to be tested. 2.根据权利要求1所述的内存测试装置,其特征在于,所述多个待测内存芯片分别是应用于行动电子装置的动态随机存取内存芯片。2 . The memory testing device of claim 1 , wherein the plurality of memory chips to be tested are dynamic random access memory chips applied to mobile electronic devices, respectively. 3 . 3.根据权利要求1所述的内存测试装置,其特征在于,各所述多个测试板还包括:3. The memory test device according to claim 1, wherein each of the plurality of test boards further comprises: 储存电路,耦接于所述主机以及所述至少一应用处理器,经配置以储存所述多个测试流程,a storage circuit, coupled to the host and the at least one application processor, configured to store the plurality of test procedures, 其中当所述对应测试板被启动后,所述至少一应用处理器从所述储存电路接收所述多个测试流程的至少其中之一。Wherein, after the corresponding test board is activated, the at least one application processor receives at least one of the plurality of test procedures from the storage circuit. 4.根据权利要求1所述的内存测试装置,其特征在于,各所述多个测试板还包括:4. The memory test device according to claim 1, wherein each of the plurality of test boards further comprises: 测试电源供应器,包括:Test the power supply, including: 电源管理控制器,耦接于所述至少一应用处理器,经配置以依据所述测试流程的其中之一提供控制讯号;以及a power management controller, coupled to the at least one application processor, configured to provide control signals according to one of the test procedures; and 电压调节器,耦接于所述电源管理控制器,经配置以依据所述控制讯号提供至少一测试电源。A voltage regulator, coupled to the power management controller, is configured to provide at least one test power source according to the control signal. 5.根据权利要求1所述的内存测试装置,其特征在于,所述至少一应用处理器还经配置以基于所述多个测试流程的至少其中之一定义出测试地址范围,并依据所述测试地址范围以对所述对应待测内存芯片进行测试。5 . The memory testing apparatus of claim 1 , wherein the at least one application processor is further configured to define a test address range based on at least one of the plurality of test procedures, and according to the The address range is tested to test the corresponding memory chip under test. 6.根据权利要求1所述的内存测试装置,其特征在于,所述至少一应用处理器还经配置以对经测试的地址进行计数。6. The memory testing apparatus of claim 1, wherein the at least one application processor is further configured to count tested addresses. 7.根据权利要求1所述的内存测试装置,其特征在于:7. memory testing device according to claim 1, is characterized in that: 所述至少一应用处理器还经配置以对所述对应待测内存芯片进行测试以得到测试信息,并将所述测试信息提供至所述主机,并且the at least one application processor is also configured to test the corresponding memory chip under test to obtain test information and to provide the test information to the host, and 所述测试信息是用以表征所述对应待测内存芯片是否通过测试的信息。The test information is information used to represent whether the corresponding memory chip to be tested passes the test. 8.根据权利要求7所述的内存测试装置,其特征在于,所述内存测试装置还包括:8. The memory testing device according to claim 7, wherein the memory testing device further comprises: 分类机,其中所述主机还经配置以依据所述测试信息以指示该分类机对所述多个待测内存芯片进行分类。A sorter, wherein the host is further configured to instruct the sorter to sort the plurality of memory chips under test according to the test information. 9.一种内存测试方法,用以由内存测试装置对多个待测内存芯片进行测试,其中所述内存测试装置包括多个测试板,其中各所述多个测试板包括至少一应用处理器,其中所述应用处理器是精简指令集(Reduced Instruction Set Computer,RISC)处理器,其特征在于,所述内存测试方法包括:9. A memory testing method for testing a plurality of memory chips to be tested by a memory testing device, wherein the memory testing device comprises a plurality of test boards, wherein each of the plurality of test boards comprises at least one application processor , wherein the application processor is a Reduced Instruction Set Computer (RISC) processor, wherein the memory testing method includes: 由所述多个测试板储存多个测试流程;storing a plurality of test procedures by the plurality of test boards; 将所述多个待测内存芯片以一对一方式或多对一方式对应设置在多个测试板上,使得各所述至少一应用处理器以一对一方式与所述多个待测内存芯片中的对应待测内存芯片直接连接;以及The plurality of memory chips to be tested are correspondingly arranged on a plurality of test boards in a one-to-one manner or a multi-to-one manner, so that each of the at least one application processor is in a one-to-one manner with the plurality of memory chips to be tested The corresponding memory chip under test in the chip is directly connected; and 由被启动后的各所述多个测试板的所述至少一应用处理器接收储存在对应测试板上的多个测试流程的至少其中之一,并基于所述多个测试流程的至少其中之一,对所述对应待测内存芯片进行测试。At least one of the plurality of test procedures stored on the corresponding test board is received by the at least one application processor of each of the plurality of test boards after being activated, and based on at least one of the plurality of test procedures First, test the corresponding memory chip to be tested. 10.根据权利要求9所述的内存测试方法,其特征在于,所述多个待测内存芯片分别是应用于行动电子装置的动态随机存取内存芯片。10 . The memory testing method according to claim 9 , wherein the plurality of memory chips to be tested are respectively dynamic random access memory chips applied to mobile electronic devices. 11 . 11.根据权利要求9所述的内存测试方法,其特征在于,由被启动后的各所述多个测试板的所述至少一应用处理器接收所述多个测试流程的至少其中之一的步骤包括:11 . The memory testing method according to claim 9 , wherein the at least one application processor of each of the plurality of test boards after being started receives at least one of the plurality of test procedures. 11 . Steps include: 由储存电路储存所述多个测试流程;以及storing the plurality of test procedures by a storage circuit; and 当所述对应测试板被启动后,由所述至少一应用处理器从所述储存电路接收所述多个测试流程的至少其中之一。After the corresponding test board is activated, at least one of the plurality of test procedures is received from the storage circuit by the at least one application processor. 12.根据权利要求9所述的内存测试方法,其特征在于,所述内存测试方法还包括:12. The memory testing method according to claim 9, wherein the memory testing method further comprises: 反应于所述至少一应用处理器的控制对所述对应待测内存芯片提供至少一测试电源。At least one test power is provided to the corresponding memory chip under test in response to the control of the at least one application processor. 13.根据权利要求9所述的内存测试方法,其特征在于,基于所述多个测试流程的至少其中之一对所述对应待测内存芯片进行测试的步骤包括:13. The memory testing method according to claim 9, wherein the step of testing the corresponding memory chip under test based on at least one of the plurality of test procedures comprises: 基于所述多个测试流程的至少其中之一定义出测试地址范围,并依据所述测试地址范围以对所述对应待测内存芯片进行测试。A test address range is defined based on at least one of the plurality of test procedures, and the corresponding memory chip under test is tested according to the test address range. 14.根据权利要求9所述的内存测试方法,其特征在于,基于所述多个测试流程的至少其中之一对所述对应待测内存芯片进行测试的步骤包括:14. The memory testing method according to claim 9, wherein the step of testing the corresponding memory chip under test based on at least one of the plurality of test procedures comprises: 对经测试的地址进行计数。Count the tested addresses. 15.根据权利要求9所述的内存测试方法,其特征在于,所述内存测试方法还包括:15. The memory testing method according to claim 9, wherein the memory testing method further comprises: 对所述对应待测内存芯片进行测试以得到测试信息,其中所述测试信息是用以表征所述对应待测内存芯片是否通过测试的信息。The corresponding memory chip to be tested is tested to obtain test information, wherein the test information is information used to characterize whether the corresponding memory chip to be tested passes the test. 16.根据权利要求15所述的内存测试方法,其特征在于,所述内存测试方法还包括:16. The memory testing method according to claim 15, wherein the memory testing method further comprises: 依据所述测试信息以对所述多个待测内存芯片进行分类。The plurality of memory chips to be tested are classified according to the test information.
CN202011230058.7A 2020-11-06 2020-11-06 Testing device and testing method for mobile memory Pending CN112382334A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN202011230058.7A CN112382334A (en) 2020-11-06 2020-11-06 Testing device and testing method for mobile memory
TW109141769A TWI789651B (en) 2020-11-06 2020-11-27 Testing device and testing method for mobile memory
TW109215680U TWM609546U (en) 2020-11-06 2020-11-27 Testing device for mobile memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011230058.7A CN112382334A (en) 2020-11-06 2020-11-06 Testing device and testing method for mobile memory

Publications (1)

Publication Number Publication Date
CN112382334A true CN112382334A (en) 2021-02-19

Family

ID=74579111

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202011230058.7A Pending CN112382334A (en) 2020-11-06 2020-11-06 Testing device and testing method for mobile memory

Country Status (2)

Country Link
CN (1) CN112382334A (en)
TW (2) TWI789651B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115841842A (en) * 2022-12-16 2023-03-24 深圳市章江科技有限公司 Memory test method, system and computer readable storage medium

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12197303B2 (en) 2022-09-21 2025-01-14 Advantest Corporation Systems and methods for testing cxl enabled devices in parallel

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200944972A (en) * 2008-04-30 2009-11-01 Universal Scient Ind Co Ltd Testing apparatus
CN102857383A (en) * 2011-06-28 2013-01-02 鸿富锦精密工业(深圳)有限公司 Synchronism detection control method and system
CN104516798A (en) * 2013-09-26 2015-04-15 晨星半导体股份有限公司 Wireless one-to-many test system
CN106294053A (en) * 2016-07-28 2017-01-04 浪潮电子信息产业股份有限公司 A kind of internal memory performance method of testing and device
CN108039190A (en) * 2017-12-15 2018-05-15 北京京存技术有限公司 A kind of test method and device
CN109408301A (en) * 2017-08-16 2019-03-01 中国兵器装备集团自动化研究所 Internal storage testing method based on 64 bit processor of Godson under a kind of PMON
CN109960616A (en) * 2017-12-22 2019-07-02 龙芯中科技术有限公司 The adjustment method and system of processor-based memory parameters

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4291596B2 (en) * 2003-02-26 2009-07-08 株式会社ルネサステクノロジ Semiconductor integrated circuit testing apparatus and semiconductor integrated circuit manufacturing method using the same
US7757144B2 (en) * 2007-11-01 2010-07-13 Kingtiger Technology (Canada) Inc. System and method for testing integrated circuit modules comprising a plurality of integrated circuit devices
US7848899B2 (en) * 2008-06-09 2010-12-07 Kingtiger Technology (Canada) Inc. Systems and methods for testing integrated circuit devices
KR102581480B1 (en) * 2016-07-27 2023-09-21 삼성전자주식회사 Test board and test system for semiconductor package, method of manufacturing semiconductor package

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200944972A (en) * 2008-04-30 2009-11-01 Universal Scient Ind Co Ltd Testing apparatus
CN102857383A (en) * 2011-06-28 2013-01-02 鸿富锦精密工业(深圳)有限公司 Synchronism detection control method and system
CN104516798A (en) * 2013-09-26 2015-04-15 晨星半导体股份有限公司 Wireless one-to-many test system
CN106294053A (en) * 2016-07-28 2017-01-04 浪潮电子信息产业股份有限公司 A kind of internal memory performance method of testing and device
CN109408301A (en) * 2017-08-16 2019-03-01 中国兵器装备集团自动化研究所 Internal storage testing method based on 64 bit processor of Godson under a kind of PMON
CN108039190A (en) * 2017-12-15 2018-05-15 北京京存技术有限公司 A kind of test method and device
CN109960616A (en) * 2017-12-22 2019-07-02 龙芯中科技术有限公司 The adjustment method and system of processor-based memory parameters

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115841842A (en) * 2022-12-16 2023-03-24 深圳市章江科技有限公司 Memory test method, system and computer readable storage medium
CN115841842B (en) * 2022-12-16 2024-05-14 深圳市章江科技有限公司 Memory testing method, system and computer readable storage medium

Also Published As

Publication number Publication date
TW202219970A (en) 2022-05-16
TWM609546U (en) 2021-03-21
TWI789651B (en) 2023-01-11

Similar Documents

Publication Publication Date Title
CN111209152B (en) DRAM chip burn-in test apparatus, method, computer apparatus, and storage medium
KR100781431B1 (en) Method and apparatus for electively accessing and configuring individual chips of a semi-conductor wafer
US7958409B2 (en) Method for recording memory parameter and method for optimizing memory
US7278038B2 (en) Operational voltage control circuit and method
US10403383B2 (en) Repair device and semiconductor device including the repair device
US6851014B2 (en) Memory device having automatic protocol detection
CN112382328B (en) Memory test device and test voltage adjusting method
CN113160875A (en) Chip test system and test method
US20100131221A1 (en) Method for determining quality parameter and the electronic apparatus using the same
CN112382334A (en) Testing device and testing method for mobile memory
US8015448B2 (en) System and method for conducting BIST operations
US6549963B1 (en) Method of configuring devices on a communications channel
US7610456B2 (en) Automatically detecting types of external data flash devices
US7275186B2 (en) Memory bus checking procedure
KR20180089053A (en) Memory apparatus capable of determining failed region and test method thereof, memory module and system using the same
US7526691B1 (en) System and method for using TAP controllers
CN117077221A (en) Hard disk screen printing distribution method and device, computer equipment and medium
US11847325B2 (en) Semiconductor integrated apparatus, operating method thereof and data processing apparatus including the same
US5317712A (en) Method and apparatus for testing and configuring the width of portions of a memory
CN114121138B (en) Memory voltage testing methods, devices, computing devices and systems
CN118708124B (en) Storage device and control method of communication frequency thereof
CN118152197B (en) Chip testing method, system, device and storage medium
CN112540881A (en) Storage device test management method and storage device test management system
CN115061558B (en) Hot reset method and device of PCIE equipment, storage medium and PCIE equipment
US7231487B2 (en) Automatic decoding method for mapping and selecting a non-volatile memory device having a LPC serial communication interface in the available addressing area on motherboards

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20210219