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CN112313784A - Oscillating apparatus, method of processing substrate, oscillating module for receiving substrate from transfer chamber, and vacuum processing system - Google Patents

Oscillating apparatus, method of processing substrate, oscillating module for receiving substrate from transfer chamber, and vacuum processing system Download PDF

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Publication number
CN112313784A
CN112313784A CN201880094749.3A CN201880094749A CN112313784A CN 112313784 A CN112313784 A CN 112313784A CN 201880094749 A CN201880094749 A CN 201880094749A CN 112313784 A CN112313784 A CN 112313784A
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China
Prior art keywords
substrate
orientation
support body
processing
chamber
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Pending
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CN201880094749.3A
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Chinese (zh)
Inventor
金庆泰
洛克莎·雷迪
佐木马·山木甘
细川昭弘
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67718—Changing orientation of the substrate, e.g. from a horizontal position to a vertical position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

An oscillating apparatus for moving a substrate relative to one or more deposition sources having a longitudinal axis is described. The swing apparatus includes: a support body for holding the substrate; a rotation mechanism coupled to the support body to move the substrate about an axis of rotation by an angle to change the orientation of the substrate from a transfer or horizontal orientation to a process or vertical orientation at a process region; and a linear motion mechanism coupled to the support body to translate the substrate relative to a longitudinal axis of the deposition source when the substrate is in a processing orientation.

Description

Oscillating apparatus, method of processing substrate, oscillating module for receiving substrate from transfer chamber, and vacuum processing system
Technical Field
Embodiments of the present disclosure relate to swing apparatuses and modules for moving a substrate relative to one or more deposition sources. Furthermore, embodiments of the present disclosure relate to a method and a vacuum processing system for processing a substrate.
Background
Several methods for depositing materials on a substrate are known. For example, the substrate may be coated by using an evaporation process, a Physical Vapor Deposition (PVD) process such as a sputtering process, a spray coating process, or the like, or a Chemical Vapor Deposition (CVD) process. The process may be carried out in a process chamber of a deposition apparatus in which the substrate to be coated is located. A deposition material is provided in the process chamber. A layer of material, such as an insulating material layer, may be deposited on the substrate using a sputter deposition process. This involves ejecting material from a target onto a substrate. A target material to be deposited on the substrate is bombarded with ions generated in the plasma region to dislodge atoms of the target material from a surface of the target. The dislodged atoms may form a layer of material on the substrate. In a reactive sputter deposition process, the dislodged atoms can react with a gas (e.g., nitrogen or oxygen) in the plasma region to form an oxide, nitride, or oxynitride of the target material on the substrate. In addition, other processes may be performed in the process chamber, such as etching, structuring, annealing, or the like.
For example, in, for example, display manufacturing techniques, coating processes may be considered for large area substrates. The coated substrate can be used in several applications and in several technical fields. For example, these applications may include insulating panels, microelectronic devices (such as semiconductor devices), substrates with Thin Film Transistors (TFTs), color filters, or similar applications.
The trend toward larger substrates with more complex and thinner coatings has led to larger process modules. The series-connected vertical processing modules may have some drawbacks due to floor space, redundancy, and cost. For large area substrate coating, the glass can be aligned with the mask to avoid coating on the edge and/or backside of the glass and the process chamber sealed from the glass transport area. The fixture holds the substrate at its edge during processing. This can lead to particle and uniformity problems due to glass mask alignment (shadowing effects) and side deposition on the jig. Furthermore, the deposition of particles generated in the process chamber on parts of the process module outside the target substrate (e.g. on moving mechanical components) may negatively affect the performance and thus the reliability of the components.
In view of the foregoing, there is a need for apparatus, modules, methods, and systems that can provide improved deposited layer uniformity and reduced particle generation in or near the processing chamber.
Disclosure of Invention
An oscillating apparatus, a method for processing a substrate, an oscillating module for receiving a substrate from a transfer chamber, and a vacuum processing system are provided. Further features, details, aspects and modifications can be derived from the dependent claims, the description and the drawings.
According to one embodiment, an oscillating apparatus for moving a substrate relative to one or more deposition sources having a longitudinal axis is provided. The swing device includes: a support body for holding the substrate; a rotation mechanism coupled to the support body to move the substrate about an axis of rotation by an angle to change the orientation of the substrate from a transfer or horizontal orientation to a process or vertical orientation at a process region; and a linear motion mechanism coupled to the support body to translate the substrate relative to a longitudinal axis of the deposition source when the substrate is in the processing orientation.
According to another embodiment, a method for processing a substrate is provided. The method comprises the following steps: holding the substrate on the support body; moving a substrate relative to a deposition source having a longitudinal axis for processing the substrate, the movement of the substrate being performed through an angle about a rotational axis by a rotation mechanism coupled to a support body to change the substrate orientation from a transfer or horizontal orientation to a process or vertical orientation; treating a surface of a substrate with a deposition source; and translating the substrate relative to a longitudinal axis of the deposition source via a linear motion mechanism coupled to the support body when the substrate is in the processing orientation.
In accordance with another embodiment, an oscillating module for receiving a substrate from a transfer chamber of a vacuum processing system and for positioning the substrate in a processing region of a processing chamber of the vacuum processing system is provided. The swing module includes: a vacuum chamber; a support body for holding a substrate within the vacuum chamber; a rotation mechanism coupled to the support body for moving the substrate through an angle about a rotation axis to change an orientation of the substrate from a transfer or horizontal orientation to a process or vertical orientation; and a linear motion mechanism coupled to the support body for laterally translating the substrate relative to a longitudinal axis of the deposition source when the substrate is in a processing orientation.
In accordance with another embodiment, a vacuum processing system for processing a substrate is provided. The system comprises: at least one processing chamber comprising a deposition source for processing the substrate, the deposition source having a longitudinal axis; at least one swing module operatively coupled to the process chamber for positioning the substrate in a processing region of the process chamber; and a transfer chamber operatively coupled to the swing module for moving the substrate to the swing module. The swing module includes: a vacuum chamber; a support body for holding a substrate within the vacuum chamber; a rotation mechanism coupled to the support body for moving the substrate through an angle about a rotation axis to change an orientation of the substrate from a transfer or horizontal orientation to a process or vertical orientation; and a linear motion mechanism coupled to the support body for laterally translating the substrate relative to a longitudinal axis of the deposition source when the substrate is in a processing orientation.
Drawings
So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments. The accompanying drawings relate to embodiments of the present disclosure and are described below:
FIG. 1 shows a schematic view of an oscillating apparatus for moving a substrate relative to a deposition source;
fig. 2A shows a schematic top view of the swing device of fig. 1;
fig. 2B shows a schematic rear view of the swing device of fig. 1;
fig. 2C shows an exploded schematic view of the swing apparatus;
fig. 3 shows a schematic view of a swing module comprising a swing device;
FIG. 4 shows a schematic side view of a vacuum processing system;
FIG. 5 shows a schematic top view of a vacuum processing system; and is
Fig. 6 shows a flow chart of a method for processing a substrate.
Detailed Description
Reference will now be made in detail to the various embodiments of the disclosure, one or more examples of which are illustrated in the figures. In the following description of the drawings, like reference numerals designate like parts. Only the differences with respect to the respective embodiments are described. Various examples are provided by way of explanation of the disclosure, and are not meant as limitations of the disclosure. Furthermore, features illustrated or described as part of one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. It is intended that the present specification includes such modifications and variations.
Unless otherwise indicated, descriptions of a portion or aspect in one embodiment also apply to a corresponding portion or aspect in another embodiment.
Embodiments described herein may be used to inspect large areas of coated substrates, such as for manufactured displays. The substrate or substrate receiving area for which the apparatus and methods described herein are configured may be, for example, 1m in size2Or larger large area substrates. For example, the large area substrate or carrier may be: generations 4.5, 4.5 corresponding to about 0.67m2A substrate (0.73 × 0.92 m); generation 5, which generation 5 corresponds to about 1.4m2A substrate (1.1m × 1.3 m); generation 7.5, generation 7.5 corresponding to about 4.29m2A substrate (1.95m × 2.2 m); generation 8.5, generation 8.5 corresponding to about 5.7m2A substrate (2.2m × 2.5 m); or even generation 10, generation 10 corresponding to about 8.7m2Substrate (2.85m × 3.05 m). Even larger generations (such as 11 th and 12 th generations) and corresponding substrate areas may be similarly achieved. For example, for OLED display manufacturing, half the size of the above-described substrate generation (including GEN6) may be coated by evaporation with an apparatus for evaporating materials. Half the size of a substrate generation may result from some processes running on a full substrate size and subsequent processes running on half of a previously processed substrate.
The term "substrate" as used herein may particularly cover a substantially inflexible substrate, such as a wafer, a transparent crystal slide (such as sapphire or the like) or a glass plate. However, the present disclosure is not so limited and the term "substrate" may include flexible substrates, such as webs or foils. According to embodiments, which can be combined with any other embodiments described herein, the substrate can be made of any material suitable for material deposition. For example, the substrate may be made of a material selected from the group consisting of: glass (e.g., soda lime glass or borosilicate glass), metal, polymer, ceramic, composite, carbon fiber material, mica, or any other material or combination of materials that can be coated by a deposition process. For example, the thickness of the substrate in a direction perpendicular to the major surface of the substrate may be in the range of 0.1mm to 1.8mm, such as 0.7mm, 0.5mm or 0.3 mm. In some embodiments, the substrate may have a thickness of 50 μm or more. The thickness of the substrate may be 900 μm or less.
Fig. 1 shows a schematic side view of a swing apparatus 10 according to an embodiment of the present disclosure. The swing apparatus 10 is used to move the substrate 20 relative to the deposition source 30. The deposition source 30 has a longitudinal axis 31 and is intended for processing the substrate 20, in particular processing one surface, i.e. the front surface, of the substrate 20. According to some embodiments, one or more vertically oriented sputtering sources may be provided. According to some embodiments of the present disclosure, which can be combined with other embodiments described herein, the deposition source can be a line source. For example, one or more rotatable sputtering cathodes may be provided. The rotatable sputtering cathode can have a cylindrical target, such as a target of the material to be deposited. Two or more sputtering cathodes can form an array. The rotating cathode array may produce a ripple in the coated material layer.
The swing device 10 includes a support body 40 for holding the substrate 20. For example, a rear surface of the substrate 20 (opposite to the front surface processed by the deposition source 30) is in contact with the support body 40. The swing apparatus 10 also includes a rotation mechanism 42 coupled to the support body 40 to move the substrate 20 about an angle 12 about a rotation axis 44 from a transfer or horizontal orientation I to a processing or vertical orientation II at the processing region. Furthermore, the swing apparatus 10 comprises a linear motion mechanism 46 coupled to the support body 40 for laterally translating the substrate 20 with respect to the longitudinal axis 31 of the deposition source 30 when the substrate 20 is in the processing orientation II (better described in fig. 2A and 2B).
The movement of the support body 40 can be described by a rotation around a joint 43 arranged at the rotation mechanism 42, wherein the joint 43 forms a rotation axis 44. The movement of the support body 40 may also be understood as a folding or flip-up movement. Dashed outline 10' in fig. 1 shows that support body 40 is moved from transfer or horizontal orientation I by an angle 12 (e.g. about 90 degrees) to treatment or vertical orientation II. The term "transfer orientation" is intended to describe an orientation in which the front surface of the substrate 20 is directed upward so that the substrate 20 can be easily transferred to or from another chamber. The term "process orientation" is intended to describe an orientation in which the front surface of the substrate 20 faces the deposition source 30 so that target material can be deposited on the substrate 20. The arrow 32 in fig. 1 shows the direction of material or ions ejected from the source.
The substrate 20 is moved into the processing region 72 by, for example, rotating about axis 44 by angle 12. The movement of the substrate 20 through the angle 12 into the processing region 72 may be described as including an angular displacement. In an embodiment, the movement of the substrate 20 through the angle 12 may include a translational movement. For example, the axis of rotation may be offset with respect to the edge of the substrate, thereby providing a translational motion during the movement of the substrate through the angle. The axis of rotation may additionally be displaced, in particular towards the treatment zone 72. A support body 40 configured to move the substrate 20 by the angle 12 may be understood as a rotatably mounted support body 40 configured to rotate or swing at least about an axis 44, for example about a joint 43, to change the orientation of the substrate surface attached to the support body 40.
According to embodiments, which can be combined with other embodiments described herein, the support body 40 is configured to move the base plate 20 from a non-vertical orientation I to a non-horizontal orientation II. In particular when referring to the orientation of the substrate 20, the non-vertical orientation I may be understood as allowing deviations from the horizontal direction or orientation of +/-20 degrees or less, for example less than +/-10 degrees. Similarly, non-horizontal orientation II may be understood to allow deviation from the vertical or orientation by +/-20 degrees or less, such as less than +/-10 degrees. For example, deviating from the vertical orientation II of the substrate support during substrate processing, in particular during the layer deposition process, may result in a more stable substrate orientation. Furthermore, especially prior to moving the substrate 20 in the processing region 72, it may be advantageous to deviate from the horizontal orientation I of the substrate to facilitate transport and/or alignment of the substrate 20.
Fig. 2A and 2B show the swing device of fig. 1 from a top view and a rear view, respectively. It should be noted that the support body 40, and therefore the substrate 20, may be laterally translated with respect to the deposition source 30, and in particular with respect to the longitudinal axis 31 of said deposition source 30. The double arrow 14 in the figure indicates that the support body 40 can be translated on the right and left side of the deposition source 30. The lateral translation is performed when the substrate 20 is in the processing orientation II, i.e. when the front surface of the substrate 20 is facing the deposition source 30. In particular, said movement is made possible by actuating a linear movement mechanism 46 coupled to the supporting body 40 and located below the rotation mechanism 42.
The lateral movement of the substrate 20 relative to the deposition source 30 allows for improved uniformity of the deposited layer. For example, the corrugations of the deposition source array may be removed by movement of the substrate in a direction perpendicular to the axis of the deposition source (e.g., line source). This can be confirmed by a variety of measurement techniques, such as microwave photoconductivity attenuation measurement (μ PCD) or X-ray methods. For example, μ PCD can be used as an indicator of monolayer uniformity tuning.
The movement of the substrate 20 through the angle 12 into the processing region 72 may be described as a substantial angular displacement. In an embodiment, the movement of the substrate 20 through the angle 12 may have a portion of a translational movement. Referring to fig. 1, the support body 40 may perform a translational movement aligned with the horizontal direction and move an angle 12 around the rotation axis towards the treatment area 72. In other words, the support body 40 is configured to move the substrate 20 in a horizontal linear direction perpendicular to the longitudinal axis 31 of the deposition source 30 during the movement from the transfer orientation I to the processing orientation II, and vice versa; and provides a linear offset 48 between the edge of the substrate 20 facing the processing region 72 and the longitudinal axis 31 of the deposition source 30.
As shown in fig. 1 and 2B, the rotation mechanism 42 is located above the linear motion mechanism 46. In particular, the rotation mechanism 42 is supported by a linear motion mechanism 46. This results in the advantage of locating the moving parts of the mechanical rotation and translation mechanism in a more compact and limited area of the swing device 10.
According to an embodiment, which can be combined with any other embodiment described herein, the swing apparatus 10 comprises a protection unit 50 for reducing particles generated by the deposition source 30 within the processing area. The protection unit 50 may be a single element that protects (i.e., shields) the moving parts of the rotational mechanism 42 and/or the linear motion mechanism 46, or may be a combination of two or more elements, each element protecting a different portion of these moving parts. In this way, particle generation in or near the treatment region 72 is reduced, or entry of generated particles into the treatment region may be reduced.
For example, the protection unit 50 may include at least one bellows element. The rotation mechanism 42 may include at least one rotational shaft 47 positioned within the bellows member. The bellows may have the form of a rod tube or a flexible tube that surrounds and covers the rotational axis 47 of the rotational mechanism 42.
According to embodiments, which can be combined with any other embodiment described herein, the protection unit 50 can comprise at least one further or second bellows element, and the linear movement mechanism 46 can comprise a linear guide 49 located within said further or second bellows element. A linear guide 49, such as that schematically shown in fig. 3, is used to provide lateral translational movement of the substrate 20 relative to the deposition source 30. In this way, the one or more bellows may have the form of a rod tube or flexible tube that surrounds and covers the linear guide 49 of the linear motion mechanism 46. The bellows may cover and thus protect other components of the linear motion mechanism 46, such as a linear actuator coupled to a linear guide 49. Due to the fact that the rotation mechanism 42 is supported by the linear movement mechanism 46, a single bellows element may be constructed to protect both the rotation shaft 47 and the linear guide 49. Alternatively, two separate bellows may be used to protect the rotary shaft 47 of the rotary mechanism 42 and the linear guide 49 of the linear motion mechanism 46.
According to an embodiment, the support body 40 may be understood as an arrangement configured to hold the substrate 20. For example, the support body 40 may be a rigid body, such as a frame or a plate. In particular, the support body 40 may be configured to support a surface of the substrate 20, such as a back surface of the substrate 20.
According to embodiments, which can be combined with any other embodiment described herein, the support body 40 comprises a susceptor for heating the substrate 20. In particular, the support body 40 may include a heated plate that is in direct contact with the substrate 20 (i.e., the back surface of the substrate 20). Heating may occur during the deposition process of the target material in the processing region 72.
In the present disclosure, a clamping element may be understood as a holding arrangement configured to provide a fixing force for attaching the substrate 20 described in the present disclosure. In particular, the base plate 20 may be held at the edge to the support body 40 by a clamp.
Fig. 2C depicts the swing apparatus 10 with the components shown in an exploded view. For example, the rotating mechanism 42 includes at least two spline shaft connecting members 421 and at least two rotating motors 422 in order to move the base plate 20 (i.e., the support main 40) from the horizontal orientation by an angle to the vertical orientation. The swing device 10 includes two tubular bellows 52 that symmetrically cover the left and right portions of the rotation shaft 47 of the rotation mechanism 42. Positioned below the rotational axis 47 is a linear movement mechanism 46 with a linear guide 49, which may additionally be covered by a bellows 52. The swing apparatus may also include a vertical frame 22 positioned at the processing region 72. When the support body 40 is rotated and held in a vertical orientation, the substrate 20 is positioned at the processing region 72 and is ready for a deposition process.
According to an embodiment, the substrate 20 may be aligned with the support body 40 before the substrate 20 is arranged on the support body 40. This alignment may be performed, for example, by a transport frame that transports the substrate 20 in a horizontal orientation above the support body 40. An array of pins may be provided to position the substrate 20 on the support body 40 in an aligned or centered manner. The substrate 20 may also be aligned by a simple pusher before the substrate 20 is placed on the support body 40 and attached by a jig.
After alignment, the substrate 20 may be attached or clamped to the support body 40, for example in a horizontal orientation. The support body 40 may then be positioned in a vertical direction. The substrate 20 may experience sagging due to gravity as the orientation changes. According to some embodiments of the present disclosure, which may be combined with other embodiments described herein, a clamp may be provided at the edge to allow for reduced sagging and easy release of the combination of the substrate 20 from the support body 40 after processing.
In the present disclosure, with respect to the rotation mechanism 42, at least one actuator is provided to move the support body 40 about the axis 44. The actuator may be understood as a rotary motor or an extendable cylinder, e.g. a hydraulically, pneumatically, mechanically or electrically driven cylinder, configured to move the support body 40 around the shaft 44 in front of the processing station. An actuator may also be understood as a linear actuator having a rack and pinion system. The shaft, in particular the rotation shaft, can be configured as a pivot, swivel, swing or swivel joint. The shaft may include an actuator, for example, having a motor and a gear. The shaft may be driven directly. A motor and/or gears may be provided. The actuator may be self-driven or may be a rotatably mounted lever. The actuator may be fixed to the support body 40 and/or the shaft.
In the present disclosure, with respect to the linear motion mechanism 46, at least one actuator is provided for laterally translating the support body 40, and thus the substrate 20, with respect to the longitudinal axis 31 of the deposition source 30. For example, an actuator may be understood as a linear actuator having a rack and pinion system. The actuator may be a rod-type actuator that may be fluid-powered (e.g., pneumatic or hydraulic) or electric via a lead screw or ball screw. Alternatively, the actuator may be a rodless actuator, which may be hydrodynamic or electrical via a lead screw, ball screw, belt, or linear motor. Both types of actuators are applicable to the guiding system. The guide elements may be profiled tracks, circular tracks or other rolling or sliding systems.
Fig. 3 and 4 depict an oscillating module 60 for receiving a substrate 20 from a transfer chamber 80 of a vacuum processing system and for positioning the substrate 20 in a processing region 72 of a processing chamber 70 of the vacuum processing system. Swing module 60 includes a vacuum chamber 62 and a support body 40 positioned within vacuum chamber 62 for holding substrate 20. A rotation mechanism 42 coupled to the support body 40 is used to move the substrate 20 from the transfer or horizontal orientation I about the rotation axis 44 by an angle 12 to the process or vertical orientation II. Fig. 3 shows the substrate in the transfer orientation I. A linear motion mechanism 46 coupled to the support body 40 is used to laterally translate the substrate 20 relative to the longitudinal axis 31 of the deposition source 30 when the substrate 20 is in the processing orientation II. In order to perform the translational movement of the substrate as described above, the linear movement mechanism 46 is provided with a linear actuator coupled to a linear guide 49, which is located below the rotation mechanism 42. Further, a protection unit 50 is provided for protecting both the rotation mechanism 42 and the linear motion mechanism 46 from particles generated by the deposition source 30.
Fig. 4 illustrates an exemplary vacuum processing system 90, comprising: at least one processing chamber 70; at least one swing module 60 operatively coupled to the process chamber 70 to position the substrate 20 in a processing region 72 of the process chamber 70; and at least one transfer chamber 80 operatively coupled to the swing module 60 to move the substrate 20 to the swing module 60. In particular, swing module 60 includes a vacuum chamber 62 and a support body 40 for holding substrate 20 within vacuum chamber 62. Furthermore, swing module 60 includes a rotation mechanism 42 coupled to support body 40 to move substrate 26 from transfer or horizontal orientation I about rotation axis 44 by angle 12 to process or vertical orientation II. Furthermore, the swing module 60 comprises a linear motion mechanism 46 coupled to the support body 40 to laterally translate the substrate 20 with respect to the longitudinal axis 31 of the deposition source 30 when the substrate 20 is in the processing orientation II.
The vacuum chamber 62 and the transfer chamber 80 of the swing module 60 may be provided with a support 64. Swing module 60 may include or may be connected to a process chamber 70, which may be provided with support posts 74.
According to embodiments, which can be combined with other embodiments described herein, as shown in fig. 5, the vacuum processing system 90 can comprise a vacuum transfer chamber 80, wherein more than one, in particular two or more swing modules 60A, 60B, 60C and 60D are arranged adjacent to the vacuum transfer chamber 80. The substrate 20 (shown in phantom) is transferred to the vacuum transfer chamber 80, such as by a load lock or load module 92. The vacuum transfer chamber 80 may move the substrate 20 to the vacuum chamber of the first swing module 60A. The vacuum processing system 90 may include a support chamber disposed on the vacuum transfer chamber 80 to perform certain additional functions, such as substrate storage, etc. Further, more than one load lock chamber may be provided. For example, a load lock chamber may be provided to load substrates into the transfer chamber and a load lock chamber may be provided to unload substrates from the transfer chamber.
The substrate 20 may be disposed or attached on the support main 40 by a jig in the vacuum chamber of the first swing module 60A. As described herein, the support body 40 moves the substrate 20 from a non-vertical orientation I by an angle 12 to a non-horizontal orientation II in a processing region of the processing chamber 70A in front of a mask (not shown). After processing the substrate 20 in the processing region of the processing chamber 70A, the substrate 20 is moved into a non-vertical orientation I out of the processing region and into the vacuum chamber of the first swing module 60A. The substrate 20 is removed from the vacuum chamber of the swing module 60A and returned to the transfer chamber 80. After obtaining the substrate 20 from the vacuum chamber of the swing module 60A, the transfer chamber 80 may move the substrate 20 to another swing module 60B or 60C or 60D having another process chamber 70B, 70C, 70D, respectively.
According to an embodiment, the movement of the substrate 20 from the swing module 60A to the further swing modules 60B, 60C, 60D may be understood as a lateral movement of the substrate 20, wherein the substrate 20 is moved while being in the non-vertical orientation I. The transfer chamber 80 may be configured to rotate the substrate 20, for example, to enable alignment of the substrate 20 prior to moving the substrate 20 to the processing chamber. The substrate 20 may be moved by the transfer chamber 80 from the vacuum chamber of the first swing module 60A to any other vacuum chamber of the swing modules 60B, 60C, 60D, which are arranged on the transfer chamber 80 in an undetermined order.
According to embodiments, the vacuum processing system 90 may include more than one load module 92, transfer chamber 80, swing module 60, or process chamber 70.
The loading module 92 may be understood to be a module capable of receiving or accepting the substrate 20 and/or removing the substrate. The load module 92 or load lock chamber may be a chamber having an opening on one side configured to receive the substrate 20. The loading module 92 may be connected to a transfer device configured to transfer the substrate 20 to the loading module 92. For example, the loading module 92 may be understood as an airlock for transferring the substrate 20 to a chamber having a low pressure, in particular a chamber having a vacuum pressure. According to an embodiment, the loading module is connected to the transfer chamber 80.
The transfer chamber 80 may be understood as a chamber having a vacuum pressure that is connected to other substrate processing modules, chambers, or devices (i.e., swing module 60, load module 92). The transfer chamber 80 may be configured to move the substrate 20 to other modules or devices connected to the transfer chamber 80 for further substrate processing.
According to an embodiment, more than one swing module 60 is arranged at the transfer chamber 80, in particular at the outer wall of the transfer chamber 80. The transfer chamber 80 may form a transfer path configuration between the swing modules 60.
The transfer chamber 80 may be understood as a transfer path configuration in which several swing modules 60A, 60B, 60C and 60D and corresponding process chambers 70A, 70B, 70C and 70D are arranged at the side regions of the transfer path configuration. Each swing module or process chamber may be connected to the transfer path arrangement, for example, by an opening or a damper.
According to an embodiment, the vacuum processing system 90 may include more than one swing module 60 and process chamber 70 arranged adjacent to each other. As described herein, in the first swing module 60A, the actuator moves the support body 40 about the axis 44 into the processing region 72A of the first process chamber 70A. For further processing, the substrate 20 may be moved to additional swing modules 60B, 60C, 60D and process chambers 70B, 70C, 70D, wherein the substrate 20 is moved from one swing module 60 to another swing module 60 in a non-vertical orientation I.
According to embodiments, the transfer chamber 80 may have a polygonal shape design, i.e. may be a polygonal design, or may have a circular design. Polygonal designs may for example include triangular, square, pentagonal or hexagonal designs. The swing module 60 may be arranged on one or more edges or on each edge of the polygonal-shaped design of the transfer chamber 80. If more than one swing module 60 is provided, the transfer chamber 80 may be disposed in the middle or center of these swing modules. The arrangement of the transfer chamber 80 in the center or middle of the swing module 60 enables a cluster-like design of the vacuum processing system 90. More than one swing module 60 and corresponding process chambers 70 may be disposed on the transfer chamber 80, with each module/chamber being the same distance from the center point of the transfer chamber 80. A storage module for substrates or any other substrate support module may also be arranged at one or more edges of the polygonal shaped design of the transfer chamber 80.
According to embodiments, two or more cluster-like vacuum processing systems 90 described herein may be connected and enable substrate transfer and further substrate processing between the two or more vacuum processing systems 90.
According to an embodiment, the transfer chamber 80 is configured to transfer the substrate 20 attached to the support body 40 to the swing module 60. Attached substrate 20 may be understood as a substrate that remains attached and/or held by a clamp on support body 40 as it passes within swing module 60 into processing region 72. The movement of the substrate 20 may be understood as a displacement in the horizontal direction. The displacement may be performed by a guiding system with rollers or the like. An advantage of keeping the substrate 20 attached to the support body 40 is that additional attaching and detaching operations of the substrate 20 with the clamps of the support body 40 can be avoided when the substrate 20 enters the swing module 60 and approaches the processing area and/or enters the transfer chamber 80 again after processing. Keeping the substrate 20 attached to the support body 40 may speed up the substrate processing process.
According to embodiments, which can be combined with other embodiments described herein, the process chamber 70 includes one or more deposition sources 30 having a longitudinal axis 31. For example, an array of 4 or more linear deposition sources (e.g., rotating sputtering cathodes) may be provided.
In addition, the process chamber may also include an injection source, such as a vertical linear injection source. For example, for a deposition source or an implantation source, the term "linear" may be understood as the source having a major dimension and a minor dimension defining a particle or ion emission area (e.g., a substantially rectangular area), wherein the minor dimension is smaller than the major dimension. For example, the minor dimension may be less than 10% of the major dimension, particularly less than 5% of the major dimension, and more particularly less than 1% of the major dimension. The major dimension may extend substantially vertically. In other words, the at least one linear source may be a vertically linear source. According to some embodiments, the beam width, e.g. the emission area, of the particles or ions provided by the at least one linear source may be in the range of between 1mm and 300mm, in particular in the range of between 10mm and 100mm, and more in particular less than 50 mm. The beam width may be defined as the linear extension perpendicular to the at least one linear source.
Generally, in an embodiment, the linear source, which is an ion source, may be configured for a pre-treatment, cleaning process of the surface of the substrate 20, implanting ions into the substrate 20 or into a layer previously deposited on the substrate 20, or depositing a layer on the substrate 20. In an embodiment, the linear source may be configured for cleaning or pretreatment of the substrate 20, which may include, for example, removal of TiO.
In general, the width of the process chamber 70 in the dimension parallel to the substrate may be significantly greater than the width of the substrate 20 in the horizontal direction perpendicular to the substrate. It should be understood that the process chamber 70 having the deposition source 30 and a large width may also be applied in other configurations, such as in an apparatus having two or more such process chambers having deposition sources 30. The extended width of the processing chamber 70 allows for moving the substrate 20 along the deposition source 30 while enabling any section of the substrate surface to be affected by the beam 32 of the deposition source 30 during processing.
The deposition source 30 may be configured as a sputtering source or as a PLD source (pulsed laser deposition) in which a high-power pulsed laser beam is focused within a vacuum chamber to impinge on a target of the material to be deposited. The material is ablated or vaporized from the target and the resulting plasma plume is deposited as a thin film on the substrate 20. For sputter deposition, a magnetron sputtering source may generally be provided, for example a cylindrical target with a permanent magnet arranged in a target cylinder.
Referring illustratively to fig. 6, an embodiment of a method 100 of processing a substrate 20 is provided. The method 100 comprises: holding 102 the substrate 20 on the support body 40 of the oscillating device 10; moving 104 the substrate 20 from a transfer or horizontal orientation I through an angle 12 about an axis of rotation 44 to a processing or vertical orientation II with respect to a deposition source 30 having a longitudinal axis 31 for processing the substrate 20 by means of a rotation mechanism 42 coupled to the support body 40; and processing 106 the surface of the substrate 20 by the beam from the deposition source 30. Furthermore, the method 100 comprises laterally translating 108 the substrate 20 relative to the longitudinal axis 31 of the deposition source 30 by means of a linear motion mechanism 46 coupled to the support body 40 when the substrate 20 is in the processing orientation II.
Furthermore, the method comprises moving the substrate 20 in a horizontal linear direction perpendicular to the longitudinal axis 31 of the deposition source 30 during the movement from the transfer orientation I to the processing orientation II, and vice versa.
Embodiments according to the present disclosure have several advantages, including the possibility of improving the uniformity of the deposited layer. Furthermore, embodiments according to the present disclosure have the advantage of reducing particle generation in or near the process chamber.
While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims (17)

1.一种摆动设备(10)，所述摆动设备用于相对于具有纵轴(31)的一或多个沉积源(30)移动基板(20)，所述摆动设备(10)包括：1. An oscillating apparatus (10) for moving a substrate (20) relative to one or more deposition sources (30) having a longitudinal axis (31), the oscillating apparatus (10) comprising: 支撑主体(40)，所述支撑主体用于保持所述基板(20)；a support body (40) for holding the substrate (20); 旋转机构(42)，所述旋转机构耦接到所述支撑主体(40)以使所述基板(20)围绕旋转轴(44)移动一角度(12)，以将所述基板的取向从传递取向或水平取向(I)改变为在处理区域(72)处的处理取向或竖直取向(II)；和A rotation mechanism (42) coupled to the support body (40) to move the substrate (20) through an angle (12) about an axis of rotation (44) to transfer the orientation of the substrate from The orientation or horizontal orientation (I) is changed to the process orientation or vertical orientation (II) at the process area (72); and 线性运动机构(46)，所述线性运动机构耦接到所述支撑主体(40)，以当所述基板(20)处于所述处理取向(II)时相对于所述沉积源(30)的所述纵轴(31)平移所述基板(20)。a linear motion mechanism (46) coupled to the support body (40) for movement of the substrate (20) relative to the deposition source (30) when the substrate (20) is in the process orientation (II) The longitudinal axis (31) translates the substrate (20). 2.根据权利要求1所述的摆动设备(10)，其中所述支撑主体(40)被构造为在从所述传递取向(I)到所述处理取向(II)的移动期间在垂直于所述沉积源(30)的所述纵轴(31)的水平线性方向上移动所述基板(20)，反之亦然；并且在邻近所述处理区域(72)的所述基板(20)的边缘与所述沉积源(30)的所述纵轴(31)之间提供线性偏移(48)。2. The oscillating device (10) according to claim 1, wherein the support body (40) is configured during movement from the transfer orientation (I) to the processing orientation (II) in a direction perpendicular to the moving the substrate (20) in a horizontal linear direction of the longitudinal axis (31) of the deposition source (30) and vice versa; and at the edge of the substrate (20) adjacent to the processing region (72) A linear offset (48) is provided from the longitudinal axis (31) of the deposition source (30). 3.根据权利要求1或2中任一项所述的摆动设备(10)，其中所述旋转机构(42)由所述线性运动机构(46)支撑。3. The swing device (10) according to any one of claims 1 or 2, wherein the rotation mechanism (42) is supported by the linear motion mechanism (46). 4.根据前述权利要求中任一项所述的摆动设备(10)，所述摆动设备还包括：4. The swing device (10) according to any one of the preceding claims, further comprising: 保护单元(50)，所述保护单元用于沉积源，以减少所述处理区域中的颗粒。A protection unit (50) for a deposition source to reduce particles in the processing region. 5.根据权利要求4所述的摆动设备(10)，其中所述保护单元(50)包括至少一第一波纹管元件(52)，并且所述旋转机构(42)包括位于所述第一波纹管元件(52)内的至少一旋转轴(47)。5. The oscillating device (10) according to claim 4, wherein the protection unit (50) comprises at least a first bellows element (52), and the rotating mechanism (42) comprises a position located in the first bellows (52) At least one axis of rotation (47) within the tube element (52). 6.根据权利要求5所述的摆动设备，其中所述线性运动机构设置在所述第一波纹管元件内。6. The oscillating apparatus of claim 5, wherein the linear motion mechanism is disposed within the first bellows element. 7.根据权利要求4或5所述的摆动设备(10)，其中所述保护单元(50)包括至少一第二波纹管元件，并且所述线性运动机构(46)包括位于所述第二波纹管元件内的线性导向件(49)。7. Oscillating device (10) according to claim 4 or 5, wherein the protection unit (50) comprises at least a second bellows element, and the linear motion mechanism (46) comprises a bellows located at the second bellows Linear guides (49) in tube elements. 8.根据前述权利要求中任一项所述的摆动设备(10)，其中所述支撑主体(40)包括用于加热所述基板(20)的基座。8. The oscillating device (10) according to any one of the preceding claims, wherein the support body (40) comprises a base for heating the substrate (20). 9.根据前述权利要求中任一项所述的摆动设备(10)，其中所述旋转机构(42)包括至少两个花键轴连接元件(421)和至少两个旋转电机(422)。9. Oscillating device (10) according to any one of the preceding claims, wherein the rotating mechanism (42) comprises at least two splined shaft connecting elements (421) and at least two rotating electric machines (422). 10.根据前述权利要求中任一项所述的摆动设备(10)，其中所述基板(20)通过夹具保持到所述支撑主体(40)。10. Oscillating device (10) according to any one of the preceding claims, wherein the base plate (20) is held to the support body (40) by a clamp. 11.一种用于处理基板(20)的方法(100)，所述方法包括：11. A method (100) for processing a substrate (20), the method comprising: 将所述基板(20)保持(102)在支撑主体(40)上|；holding (102) the substrate (20) on the support body (40) |; 相对于具有纵轴(31)的用于处理所述基板(20)的沉积源(30)移动(104)所述基板(20)，所述基板(20)的所述移动是通过耦接到所述支撑主体(40)的旋转机构(42)而围绕旋转轴(44)经过一角度(12)进行的，以将所述基板的取向从传递取向或水平取向(I)改变为处理取向或竖直取向(II)；moving (104) the substrate (20) relative to a deposition source (30) having a longitudinal axis (31) for processing the substrate (20), the movement of the substrate (20) being coupled to The rotation mechanism (42) of the support body (40) is carried out through an angle (12) about the rotation axis (44) to change the orientation of the substrate from the transfer orientation or the horizontal orientation (I) to the process orientation or vertical orientation (II); 用所述沉积源(30)处理(106)所述基板(20)的表面；和treating (106) the surface of the substrate (20) with the deposition source (30); and 当所述基板(20)处于所述处理取向(II)时，通过耦接到所述支撑主体(40)的线性运动机构(46)相对于所述沉积源(30)的所述纵轴(31)平移(108)所述基板(20)。When the substrate (20) is in the process orientation (II), relative to the longitudinal axis ( 31) Translate (108) the substrate (20). 12.根据权利要求11所述的方法(100)，所述方法还包括：12. The method (100) of claim 11, further comprising: 在从所述传递取向(I)到所述处理取向(II)的所述移动期间，在垂直于所述沉积源(30)的所述纵轴(31)的水平线性方向上移动所述基板(20)，反之亦然。During the movement from the transfer orientation (I) to the process orientation (II), the substrate is moved in a horizontal linear direction perpendicular to the longitudinal axis (31) of the deposition source (30) (20), and vice versa. 13.一种摆动模块(60)，用于从真空处理系统的传递腔室(80)接收基板(20)，并且用于将所述基板(20)定位在所述真空处理系统的处理腔室(70)的处理区域(72)中，所述摆动模块(60)包括：13. A wobble module (60) for receiving a substrate (20) from a transfer chamber (80) of a vacuum processing system and for positioning the substrate (20) in the processing chamber of the vacuum processing system In the processing area (72) of (70), the swing module (60) includes: 真空腔室(62)，vacuum chamber (62), 支撑主体(40)，所述支撑主体用于将所述基板(20)保持在所述真空腔室(62)内；a support body (40) for holding the substrate (20) in the vacuum chamber (62); 旋转机构(42)，所述旋转机构耦接到所述支撑主体(40)以使所述基板(20)围绕旋转轴(44)移动一角度(12)，以将所述基板的取向从传递取向或水平取向(I)改变为处理取向或竖直取向(II)；和A rotation mechanism (42) coupled to the support body (40) to move the substrate (20) through an angle (12) about an axis of rotation (44) to transfer the orientation of the substrate from Orientation or horizontal orientation (I) is changed to handle orientation or vertical orientation (II); and 线性运动机构(46)，所述线性运动机构耦接到所述支撑主体(40)，以当所述基板(20)处于所述处理取向(II)时相对于所述沉积源(30)的所述纵轴(31)侧向平移所述基板(20)。a linear motion mechanism (46) coupled to the support body (40) for movement of the substrate (20) relative to the deposition source (30) when the substrate (20) is in the process orientation (II) The longitudinal axis (31) translates the base plate (20) laterally. 14.一种用于处理基板(20)的真空处理系统(90)，所述系统(90)包括：14. A vacuum processing system (90) for processing a substrate (20), the system (90) comprising: 至少一处理腔室(70)，所述处理腔室包括具有纵轴(31)的用于处理所述基板(20)的沉积源(30)；at least one processing chamber (70) comprising a deposition source (30) having a longitudinal axis (31) for processing the substrate (20); 至少一个摆动模块(60)，所述至少一个摆动模块被可操作地耦接到所述处理腔室(70)，用于将所述基板(20)定位在所述处理腔室(70)的处理区域(72)中；和At least one wobble module (60) operably coupled to the processing chamber (70) for positioning the substrate (20) within the processing chamber (70) in the processing area (72); and 传递腔室(80)，所述传递腔室被可操作地耦接到所述摆动模块(60)，用于将所述基板(20)移动到所述摆动模块(60)，a transfer chamber (80) operably coupled to the swing module (60) for moving the substrate (20) to the swing module (60), 所述摆动模块(60)包括：The swing module (60) includes: 真空腔室(62)；vacuum chamber (62); 支撑主体(40)，所述支撑主体用于将所述基板(20)保持在所述真空腔室(62)内；a support body (40) for holding the substrate (20) in the vacuum chamber (62); 旋转机构(42)，所述旋转机构耦接到所述支撑主体(40)以使所述基板(20)围绕旋转轴(44)移动一角度(12)，以将所述基板的取向从传递取向或水平取向(I)改变为处理取向或竖直取向(II)；和A rotation mechanism (42) coupled to the support body (40) to move the substrate (20) through an angle (12) about an axis of rotation (44) to transfer the orientation of the substrate from Orientation or horizontal orientation (I) is changed to handle orientation or vertical orientation (II); and 线性运动机构(46)，所述线性运动机构耦接到所述支撑主体(40)，以当所述基板(20)处于所述处理取向(II)时相对于所述沉积源(30)的所述纵轴(31)侧向平移所述基板(20)。a linear motion mechanism (46) coupled to the support body (40) for movement of the substrate (20) relative to the deposition source (30) when the substrate (20) is in the process orientation (II) The longitudinal axis (31) translates the base plate (20) laterally. 15.根据权利要求14所述的系统(90)，所述系统还包括至少一装载锁定腔室(92)，所述装载锁定腔室耦接到所述传递腔室(80)。15. The system (90) of claim 14, further comprising at least one load lock chamber (92) coupled to the transfer chamber (80). 16.根据权利要求14或15中任一项所述的系统(90)，其中所述传递腔室(80)具有多边形或圆形的形状，并且耦接到两个或更多个摆动模块(70)。16. The system (90) of any one of claims 14 or 15, wherein the transfer chamber (80) has a polygonal or circular shape and is coupled to two or more swing modules ( 70). 17.根据权利要求14至16中任一项所述的系统(90)，其中所述沉积源(30)是竖直线性沉积源，或者其中所述系统还包括竖直线性注入源。17. The system (90) of any one of claims 14 to 16, wherein the deposition source (30) is a vertical linear deposition source, or wherein the system further comprises a vertical linear implantation source.
CN201880094749.3A 2018-06-28 2018-06-28 Oscillating apparatus, method of processing substrate, oscillating module for receiving substrate from transfer chamber, and vacuum processing system Pending CN112313784A (en)

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CN113035752A (en) * 2021-03-05 2021-06-25 上海广川科技有限公司 Load lock device and substrate conveying method

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