CN112307656A - Method, system and device for acquiring electric heating parameters of power semiconductor module - Google Patents
Method, system and device for acquiring electric heating parameters of power semiconductor module Download PDFInfo
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Abstract
The invention discloses a method, a system and a device for acquiring an electric heating parameter of a power semiconductor module; the method is obtained based on the combined simulation of PLECS simulation software and ANSYS ICEPAK simulation software, simulation platforms with different circuit topological structures, modulation methods, power and other conditions can be established according to practical application through the combined simulation of the PLECS simulation software and ANSYS ICEPAK simulation software, meanwhile, practical conditions such as fluid conditions, temperature distribution and the like are established into the simulation as simulation conditions, the combined simulation calculates electric heating parameters of each chip in the power semiconductor module, the electric heating parameters comprise temperature saving and power loss, and the output electric heating parameters are close to the practical application and accurate. The invention can be widely applied to the technical field of electric heating parameter simulation of power electronics.
Description
Technical Field
The invention relates to the technical field of electric and thermal parameter simulation of power electronics, in particular to a method, a system and a device for acquiring electric and thermal parameters of a power semiconductor module.
Background
The electrothermal parameters of the power semiconductor device are one of the most important parameters in the application of power electronic products, temperature data of each chip inside a module of the power semiconductor module in practical application are mostly measured through an NTC resistor carried by the module, the measured temperature is not the temperature saving of the power semiconductor, so that the obtained result has larger difference with the actual result, and the thermal damage accounts for a large proportion of the damage of the power semiconductor device of the power electronic product, including the occurrence of a fryer event of the power semiconductor module in operation, which is almost caused by improper thermal parameter management in the product application.
Because ANSYS ICEPAK simulation is to establish the thermal parameter characteristic of the three-dimensional geometric model simulation product according to the real object, the loss and thermal parameter of the power semiconductor applied in different fields can not be obtained; the PLECS simulation is to establish a model of the power semiconductor module based on datasheet data, the thermal model has no function of simulating fluid heat dissipation, and if data of a single chip connected in parallel in the power semiconductor module cannot be obtained and actual fluid heat dissipation cannot be simulated, working electric heating parameters of the single chip in the power semiconductor module cannot be output. The prior art therefore suffers from the following drawbacks:
(1) in practical application, the electric heating parameters of each chip inside the power semiconductor module are difficult to obtain reliable data;
(2) the PLECS simulation software or ANSYS ICEPAK simulation software is used for independent simulation, the simulation conditions are greatly different from the actual application conditions, and the electric heating parameters cannot be acquired or are inaccurate.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, the invention provides a method, a system and a device for acquiring an electrothermal parameter of a power semiconductor module.
The technical scheme adopted by the invention is as follows: in one aspect, an embodiment of the present invention includes a method for obtaining an electrothermal parameter of a power semiconductor module, including:
simulating and outputting first data through ANSYS ICEPAK simulation software, wherein the first data comprises the junction-to-shell thermal resistance of each chip inside the power semiconductor module;
according to data in the datasheet and the first data, building a model of the power semiconductor module through PLECS simulation software, and simulating and outputting second data, wherein the second data comprises first loss power and first temperature of the power semiconductor module;
acquiring the second data through ANSYS ICEPAK simulation software, and inputting the second data into a three-dimensional geometric model of the power semiconductor module;
simulating and outputting third data through ANSYS ICEPAK simulation software, wherein the third data comprises the thermal model parameters of each chip in the power semiconductor module and the temperature distribution of the power semiconductor module shell;
resetting the temperature of the radiator of the power semiconductor module through PLECS simulation software according to the third data, and simulating and outputting fourth data, wherein the fourth data are electric heating parameters of the power semiconductor module, and the electric heating parameters comprise second power loss and second temperature saving.
Further, the step of outputting the first data through the simulation software of ANSYS ICEPAK specifically includes:
constructing the three-dimensional geometric model through ANSYS ICEPAK simulation software according to a physical structure inside the power semiconductor module;
and simulating by using the three-dimensional geometric model to obtain first data and outputting the first data.
Further, before the building a model of the power semiconductor module by the pledce simulation software according to the data in the datasheet and the first data, the method further includes:
and constructing a simulation platform through PLECS simulation software, wherein the simulation platform comprises different circuit topologies and corresponding modulation algorithms.
Further, after the acquiring the second data by the ANSYS ICEPAK simulation software, the method further includes:
fluid conditions including water temperature, flow rate, wind speed and air temperature are input in the ANSYS ICEPAK simulation software.
Further, the step of resetting the temperature of the heat sink of the power semiconductor module by the plccs simulation software according to the third data specifically includes:
determining that the electrical index parameter is unchanged, and acquiring the temperature distribution condition of the power semiconductor module shell in the third data;
and resetting the substrate temperature corresponding to each chip of the power semiconductor module according to the temperature distribution condition of the power semiconductor module shell.
On the other hand, the embodiment of the invention also comprises a system for acquiring the electrothermal parameters of the power semiconductor module, which comprises:
the first data output module is used for outputting first data through ANSYS ICEPAK simulation software, wherein the first data comprises the junction-to-shell thermal resistance of each chip inside the power semiconductor module;
the second data output module is used for constructing a model of the power semiconductor module through PLECS simulation software according to data in the datasheet and the first data and simulating and outputting second data, wherein the second data comprises first loss power and first temperature of the power semiconductor module;
the second data input module is used for acquiring the second data through ANSYS ICEPAK simulation software and inputting the second data into the three-dimensional geometric model of the power semiconductor module;
a third data output module for outputting third data through ANSYS ICEPAK simulation software, wherein the third data comprises thermal model parameters of each chip inside the power semiconductor module and temperature distribution of the power semiconductor module shell;
and the fourth data output module is used for resetting the temperature of the radiator of the power semiconductor module through PLECS simulation software according to the third data and outputting fourth data in a simulation mode, wherein the fourth data are electric heating parameters of the power semiconductor module, and the electric heating parameters comprise second power loss and second temperature saving.
Further, the first data output module includes:
a model construction unit: the three-dimensional geometric model is constructed through ANSYS ICEPAK simulation software according to the physical structure inside the power semiconductor module;
and the simulation unit is used for performing simulation by using the three-dimensional geometric model to obtain first data and outputting the first data.
Further, the fourth data output module includes:
the acquisition unit is used for determining that the electrical index parameters are unchanged and acquiring the temperature distribution condition of the power semiconductor module shell in the third data;
and the setting unit is used for resetting the substrate temperature corresponding to each chip of the power semiconductor module according to the temperature distribution condition of the power semiconductor module shell.
On the other hand, the embodiment of the invention also comprises a device for acquiring the electrothermal parameters of the power semiconductor module, which comprises:
at least one processor;
at least one memory for storing at least one program;
when the at least one program is executed by the at least one processor, the at least one processor is enabled to implement the method for obtaining the electrothermal parameters of the power semiconductor module.
In another aspect, the embodiment of the present invention further includes a computer readable storage medium, on which a program executable by a processor is stored, and when the program executable by the processor is executed by the processor, the program is used for implementing the method for acquiring the electrothermal parameters of the power semiconductor module.
The invention has the beneficial effects that:
according to the invention, through the combined simulation of PLECS simulation software and ANSYS ICEPAK simulation software, simulation platforms of different circuit topological structures, modulation methods, power and other conditions can be established according to practical application, meanwhile, the practical conditions such as fluid conditions, temperature distribution and the like are established into the simulation as simulation conditions, the electric heating parameters of each chip in the power semiconductor module are calculated through the combined simulation, the electric heating parameters comprise temperature saving and power loss, and the output electric heating parameters are close to the practical application and are accurate.
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The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which
FIG. 1 is a flowchart illustrating steps of a method for obtaining electrothermal parameters of a power semiconductor module according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an apparatus for acquiring an electrothermal parameter of a power semiconductor module according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, the meaning of a plurality of means is one or more, and the meaning of a plurality of means is two or more, and larger, smaller, larger, etc. are understood to exclude the essential numbers. If there is a description to first, second, third etc. for the purpose of distinguishing between technical features, it is not intended to indicate or imply relative importance or to implicitly indicate the number of technical features indicated or to implicitly indicate the precedence of technical features indicated.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
In order to obtain the electric heating parameters of the power semiconductor module closer to practical application in simulation, the embodiment of the invention provides a combined simulation method of the electric heating parameters of the power semiconductor module based on PLECS simulation software and ANSYS ICEPAK simulation software, which can build a simulation circuit and a structural platform according to application conditions and calculate the electric heating parameters of the semiconductor module.
Referring to fig. 1, fig. 1 shows a method for obtaining electrothermal parameters of a power semiconductor module, including but not limited to the following steps:
s1, simulating and outputting first data through ANSYS ICEPAK simulation software, wherein the first data comprise the junction-shell thermal resistance of each chip in a power semiconductor module;
s2, according to data in the datasheet and the first data, a model of the power semiconductor module is built through PLECS simulation software, and second data are output in a simulation mode, wherein the second data comprise first loss power and first temperature of the power semiconductor module;
s3, acquiring the second data through ANSYS ICEPAK simulation software, and inputting the second data into a three-dimensional geometric model of the power semiconductor module;
s4, simulating and outputting third data through ANSYS ICEPAK simulation software, wherein the third data comprise the thermal model parameters of each chip in the power semiconductor module and the temperature distribution of the shell of the power semiconductor module;
s5, resetting the temperature of the radiator of the power semiconductor module through PLECS simulation software according to the third data, and outputting fourth data in a simulation mode, wherein the fourth data are electric heating parameters of the power semiconductor module, and the electric heating parameters comprise second power loss and second temperature saving.
At present, most of simulation software applied in the power electronic industry is common software such as saber or MATLAB, and the course data on the network is relatively complete; the teaching course data of PLECS simulation software is few, so that a few technicians are used in the industry; however, the PLECS simulation software can directly output parameters such as loss, temperature saving and the like of the device through modeling simulation, and is simpler and more convenient in the field of power electronic electrothermal simulation compared with software such as saber, MATLAB and the like.
The PLECS simulation software is a professional time domain simulation software of a power electronic system, provides an integrated solution for modeling a complex circuit and complex control in a single environment, and comprises a powerful thermal analysis function, wherein a heat function library enables a user to integrate a thermal design into the electronic design of the power circuit, the user can define temperature-related heat conduction and switching loss energy distribution of each semiconductor element, and in addition, the software also supports data sampling, so that the modeling efficiency can be greatly improved.
Specifically, in this embodiment, an electrothermal simulation is applied to the power semiconductor device in the PLECS simulation software, and a user may build a model according to parameters of the power semiconductor module, build a simulation platform according to an application environment, collect energy lost by the power semiconductor module, and simulate a thermal behavior using a thermal resistor and a capacitor element.
ANSYS ICEPAK simulation software can provide a powerful electronic cooling solution for thermal and fluid flow analysis of Integrated Circuits (ICs), packages, Printed Circuit Boards (PCBs), and electronic components using the industry leading ANSYS Fluent Computational Fluid Dynamics (CFD) solver. The ANSYS ICEPAKCFD solver provides a CAD-centric solution using an ANSYS Electronics Desktop (AEDT) Graphical User Interface (GUI), which in turn allows easy-to-use ribbon interfaces to manage thermal problems within the same unified framework as ANSYS HFSS, ANSYS Maxwell, and ANSYS Q3D Extractor.
Specifically, in this embodiment, in ANSYS ICEPAK simulation software, a three-dimensional geometric model may be established according to an internal physical structure of the power semiconductor module, and crusting thermal resistance data may be obtained through simulation, where the data may be steady-state thermal resistance data.
In the embodiment, the electrothermal parameters of the yield semiconductor module are obtained through the joint simulation of PLECS simulation software and ANSYS ICEPAK simulation software, and the obtained electrothermal parameters are close to actual application and accurate.
Further, step S1, namely the step of simulating the output of the first data by the ANSYS ICEPAK simulation software, specifically includes:
s101, according to a physical structure in the power semiconductor module, constructing the three-dimensional geometric model through ANSYS ICEPAK simulation software;
and S102, simulating by using the three-dimensional geometric model to obtain first data and outputting the first data.
In this embodiment, ANSYS ICEPAK simulation software is used to construct a three-dimensional geometric model according to a physical structure inside the power semiconductor module, and then simulation is performed to obtain the junction-to-shell thermal resistance of each chip inside the power semiconductor module, that is, first data.
In some embodiments, before the building a model of the power semiconductor module according to the data in the datasheet and the first data by the PLECS simulation software, the method further includes:
and constructing a simulation platform through PLECS simulation software, wherein the simulation platform comprises different circuit topologies and corresponding modulation algorithms.
In this embodiment, using the PLECS simulation software, a simulation platform of different circuit topologies and modulation algorithms used can be established according to field applications, and then modeling is performed in the simulation platform.
In some embodiments, after the acquiring the second data by the ANSYS ICEPAK simulation software, the method further includes:
fluid conditions including water temperature, flow rate, wind speed and air temperature are input in the ANSYS ICEPAK simulation software.
In this embodiment, in the ANSYS ICEPAK simulation software, the fluid conditions such as water temperature, flow rate, wind speed, air temperature, etc. are input into the application environment, and since the fluid has the function of carrying away energy, the temperatures of the fluid inlet and the fluid outlet are different, and therefore, the housing of the power semiconductor module has different temperature distributions.
In step S5, the resetting the temperature of the heat sink of the power semiconductor module by the pledcs simulation software according to the third data specifically includes:
s501, determining that the electrical index parameters are unchanged, and acquiring the temperature distribution condition of the power semiconductor module shell in the third data;
s502, resetting the substrate temperature corresponding to each chip of the power semiconductor module according to the temperature distribution condition of the shell of the power semiconductor module.
In this embodiment, in the plccs simulation software, the same electrical index parameter as that in step S2 is used for simulation, the case temperature distribution of the power semiconductor module is simulated, and then the substrate temperature corresponding to each chip is set in the plccs simulation software again, so that different power losses occur when the power semiconductor module operates at different temperatures, and the temperature saving of the chips inside the power semiconductor module is different.
In summary, the method for obtaining the electric heating parameter of the power semiconductor module in the embodiment at least has the following beneficial effects:
according to the invention, through the combined simulation of PLECS simulation software and ANSYS ICEPAK simulation software, simulation platforms of different circuit topological structures, modulation methods, power and other conditions can be established according to practical application, meanwhile, the practical conditions such as fluid conditions, temperature distribution and the like are established into the simulation as simulation conditions, the electric heating parameters of each chip in the power semiconductor module are calculated through the combined simulation, the electric heating parameters comprise temperature saving and power loss, and the output electric heating parameters are close to the practical application and are accurate.
On the other hand, the embodiment of the invention also provides a system for acquiring the electrothermal parameters of the power semiconductor module, which comprises:
the first data output module is used for outputting first data through ANSYS ICEPAK simulation software, wherein the first data comprises the junction-to-shell thermal resistance of each chip inside the power semiconductor module;
the second data output module is used for constructing a model of the power semiconductor module through PLECS simulation software according to data in the datasheet and the first data and simulating and outputting second data, wherein the second data comprises first loss power and first temperature of the power semiconductor module;
the second data input module is used for acquiring the second data through ANSYS ICEPAK simulation software and inputting the second data into the three-dimensional geometric model of the power semiconductor module;
a third data output module for outputting third data through ANSYS ICEPAK simulation software, wherein the third data comprises thermal model parameters of each chip inside the power semiconductor module and temperature distribution of the power semiconductor module shell;
and the fourth data output module is used for resetting the temperature of the radiator of the power semiconductor module through PLECS simulation software according to the third data and outputting fourth data in a simulation mode, wherein the fourth data are electric heating parameters of the power semiconductor module, and the electric heating parameters comprise second power loss and second temperature saving.
Further, the first data output module includes:
a model construction unit: the three-dimensional geometric model is constructed through ANSYS ICEPAK simulation software according to the physical structure inside the power semiconductor module;
and the simulation unit is used for performing simulation by using the three-dimensional geometric model to obtain first data and outputting the first data.
Further, the fourth data output module includes:
the acquisition unit is used for determining that the electrical index parameters are unchanged and acquiring the temperature distribution condition of the power semiconductor module shell in the third data;
and the setting unit is used for resetting the substrate temperature corresponding to each chip of the power semiconductor module according to the temperature distribution condition of the power semiconductor module shell.
Referring to fig. 2, an embodiment of the present invention further provides an apparatus 200 for obtaining an electrothermal parameter of a power semiconductor module, which specifically includes:
at least one processor 210;
at least one memory 220 for storing at least one program;
when executed by the at least one processor 210, causes the at least one processor 210 to implement the method as shown in fig. 1.
The memory 220, which is a non-transitory computer-readable storage medium, may be used to store non-transitory software programs and non-transitory computer-executable programs. The memory 220 may include high speed random access memory and may also include non-transitory memory, such as at least one magnetic disk storage device, flash memory device, or other non-transitory solid state storage device. In some embodiments, memory 220 may optionally include remote memory located remotely from processor 210, and such remote memory may be connected to processor 210 via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
It will be understood that the device configuration shown in fig. 2 is not intended to be limiting of device 200, and may include more or fewer components than shown, or some components may be combined, or a different arrangement of components.
In the apparatus 200 shown in fig. 2, the processor 210 may retrieve the program stored in the memory 220 and execute, but is not limited to, the steps of the embodiment shown in fig. 1.
The above-described embodiments of the apparatus 200 are merely illustrative, and the units illustrated as separate components may or may not be physically separate, may be located in one place, or may be distributed over a plurality of network units. Some or all of the modules can be selected according to actual needs to achieve the purposes of the embodiments.
Embodiments of the present invention also provide a computer-readable storage medium, which stores a program executable by a processor, and the program executable by the processor is used for implementing the method shown in fig. 1 when being executed by the processor.
The embodiment of the application also discloses a computer program product or a computer program, which comprises computer instructions, and the computer instructions are stored in a computer readable storage medium. The computer instructions may be read by a processor of a computer device from a computer-readable storage medium, and executed by the processor to cause the computer device to perform the method illustrated in fig. 1.
It will be understood that all or some of the steps, systems of methods disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as is well known to those of ordinary skill in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can accessed by a computer. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to those skilled in the art.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the above embodiments, and various changes can be made within the knowledge of those skilled in the art without departing from the gist of the present invention.
Claims (10)
1. A method for acquiring electric heating parameters of a power semiconductor module is based on joint simulation acquisition of a plurality of simulation software and is characterized by comprising the following steps:
simulating and outputting first data through ANSYS ICEPAK simulation software, wherein the first data comprises the junction-to-shell thermal resistance of each chip inside the power semiconductor module;
according to data in the datasheet and the first data, building a model of the power semiconductor module through PLECS simulation software, and simulating and outputting second data, wherein the second data comprises first loss power and first temperature of the power semiconductor module;
acquiring the second data through ANSYS ICEPAK simulation software, and inputting the second data into a three-dimensional geometric model of the power semiconductor module;
simulating and outputting third data through ANSYS ICEPAK simulation software, wherein the third data comprises the thermal model parameters of each chip in the power semiconductor module and the temperature distribution of the power semiconductor module shell;
resetting the temperature of the radiator of the power semiconductor module through PLECS simulation software according to the third data, and simulating and outputting fourth data, wherein the fourth data are electric heating parameters of the power semiconductor module, and the electric heating parameters comprise second power loss and second temperature saving.
2. The method for obtaining electrothermal parameters of a power semiconductor module according to claim 1, wherein the step of outputting the first data through simulation software ANSYS ICEPAK specifically comprises:
constructing the three-dimensional geometric model through ANSYS ICEPAK simulation software according to a physical structure inside the power semiconductor module;
and simulating by using the three-dimensional geometric model to obtain first data and outputting the first data.
3. The method for obtaining the electrothermal parameters of the power semiconductor module according to claim 1, wherein before constructing the model of the power semiconductor module according to the data in the datasheet and the first data by PLECS simulation software, the method further comprises:
and constructing a simulation platform through PLECS simulation software, wherein the simulation platform comprises different circuit topologies and corresponding modulation algorithms.
4. The method for obtaining electrothermal parameters of a power semiconductor module according to claim 1, wherein after the obtaining of the second data by ANSYS ICEPAK simulation software, the method further comprises:
fluid conditions including water temperature, flow rate, wind speed and air temperature are input in the ANSYS ICEPAK simulation software.
5. The method for obtaining the electrothermal parameters of the power semiconductor module according to claim 1, wherein the step of resetting the temperature of the heat sink of the power semiconductor module according to the third data by using PLECS simulation software specifically comprises:
determining that the electrical index parameter is unchanged, and acquiring the temperature distribution condition of the power semiconductor module shell in the third data;
and resetting the substrate temperature corresponding to each chip of the power semiconductor module according to the temperature distribution condition of the power semiconductor module shell.
6. A system for obtaining electrothermal parameters of a power semiconductor module, comprising:
the first data output module is used for outputting first data through ANSYS ICEPAK simulation software, wherein the first data comprises the junction-to-shell thermal resistance of each chip inside the power semiconductor module;
the second data output module is used for constructing a model of the power semiconductor module through PLECS simulation software according to data in the datasheet and the first data and simulating and outputting second data, wherein the second data comprises first loss power and first temperature of the power semiconductor module;
the second data input module is used for acquiring the second data through ANSYS ICEPAK simulation software and inputting the second data into the three-dimensional geometric model of the power semiconductor module;
a third data output module for outputting third data through ANSYS ICEPAK simulation software, wherein the third data comprises thermal model parameters of each chip inside the power semiconductor module and temperature distribution of the power semiconductor module shell;
and the fourth data output module is used for resetting the temperature of the radiator of the power semiconductor module through PLECS simulation software according to the third data and outputting fourth data in a simulation mode, wherein the fourth data are electric heating parameters of the power semiconductor module, and the electric heating parameters comprise second power loss and second temperature saving.
7. The system of claim 6, wherein the first data output module comprises:
a model construction unit: the three-dimensional geometric model is constructed through ANSYS ICEPAK simulation software according to the physical structure inside the power semiconductor module;
and the simulation unit is used for performing simulation by using the three-dimensional geometric model to obtain first data and outputting the first data.
8. The system of claim 6, wherein the fourth data output module comprises:
the acquisition unit is used for determining that the electrical index parameters are unchanged and acquiring the temperature distribution condition of the power semiconductor module shell in the third data;
and the setting unit is used for resetting the substrate temperature corresponding to each chip of the power semiconductor module according to the temperature distribution condition of the power semiconductor module shell.
9. An apparatus for obtaining electrothermal parameters of a power semiconductor module, comprising:
at least one processor;
at least one memory for storing at least one program;
when the at least one program is executed by the at least one processor, the at least one processor is caused to implement the method of obtaining an electrothermal parameter of a power semiconductor module according to any one of claims 1 to 5.
10. Computer-readable storage medium, characterized in that a processor-executable program is stored thereon, which, when being executed by a processor, is adapted to carry out the method of obtaining an electrical heating parameter of a power semiconductor module according to any one of claims 1-5.
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| CN113657064A (en) * | 2021-08-20 | 2021-11-16 | 华中科技大学 | Multi-physical-field joint simulation method for power semiconductor module |
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| CN115128422A (en) * | 2022-06-28 | 2022-09-30 | 上海交通大学 | All-in-one test system and test method for electrical and thermal parameters of power semiconductor devices |
| CN116186990A (en) * | 2022-12-19 | 2023-05-30 | 中国华能集团清洁能源技术研究院有限公司 | A thermoelectric co-simulation method and device |
| CN116186990B (en) * | 2022-12-19 | 2024-12-06 | 中国华能集团清洁能源技术研究院有限公司 | A thermal power combined simulation method and device |
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