CN112289925B - Method for preparing magnetic sensor - Google Patents
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- CN112289925B CN112289925B CN202011266518.1A CN202011266518A CN112289925B CN 112289925 B CN112289925 B CN 112289925B CN 202011266518 A CN202011266518 A CN 202011266518A CN 112289925 B CN112289925 B CN 112289925B
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 69
- 239000002184 metal Substances 0.000 claims abstract description 69
- 239000000696 magnetic material Substances 0.000 claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 16
- 239000010410 layer Substances 0.000 claims description 183
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 230000004888 barrier function Effects 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 239000011241 protective layer Substances 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 230000000903 blocking effect Effects 0.000 claims description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000005121 nitriding Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 230000001568 sexual effect Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention provides a preparation method of a magnetic sensor, which comprises the following steps: first, a trench is formed in the dielectric layer on the semiconductor substrate, the trench exposing a portion of the first metal layer. Then, a magnetic material film layer is formed on the dielectric layer and in the groove. And removing the magnetic material film layer at the bottom of the groove to expose part of the first metal layer. And finally, forming a second metal layer in the groove, wherein the second metal layer fills and covers the groove. Therefore, the invention passes through a groove, and the magnetic material film layer is formed in the groove, and then the second metal layer is formed, so that the magnetic material film layer is interconnected with the semiconductor substrate through the second metal layer and the first metal layer. The connection between the first metal layer and the second metal layer is realized without forming a metal contact hole structure. Therefore, the invention not only simplifies the process flow, but also reduces the use of masks, greatly reduces the preparation cost and improves the preparation efficiency.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a preparation method of a magnetic sensor.
Background
Magnetic sensors can be classified into the following categories according to their principle: hall elements, magneto-sensitive diodes, anisotropic Magnetoresistance (AMR) elements, tunnel junction magnetoresistance (TMR) elements, giant Magnetoresistance (GMR) elements, induction coils, superconducting quantum interference magnetometers, and the like. In recent years, anisotropic Magnetoresistance (AMR) elements have been widely used in mobile phones, electronic compasses, and automotive electronics due to the rapid development of consumer electronics.
An Anisotropic Magnetoresistance (AMR) element is a component fabricated based on the anisotropic magnetoresistance effect, which refers to the phenomenon in which the resistivity of ferromagnetic materials changes as the magnetization itself and the angle between the directions of current flow change. At present, a magnetic sensor manufactured by integrating a MEMS device manufactured based on AMR and a CMOS integrated circuit has the characteristics of high sensitivity, good thermal stability, low material cost and the like, and has become a direction of future development.
Wherein the interconnection process of the MEMS device and the CMOS integrated circuit based on AMR manufacture is an important process for preparing the magnetic sensor. However, the current interconnection process is to make a metal contact hole and a metal layer to connect the magnetic material and the CMOS integrated circuit. That is, one mask is required to form the metal contact hole, and one mask is required to form the metal layer, so that the whole preparation process is complicated, and the preparation cost is high.
Therefore, a new preparation method is needed, which not only can realize interconnection between the magnetic material and the CMOS integrated circuit, but also can reduce masks, reduce cost and simplify process flow.
Disclosure of Invention
The invention aims to provide a preparation method of a magnetic sensor, which aims to solve the problems of complicated process flow and high cost of interconnection of a magnetic material and a semiconductor substrate.
In order to solve the above technical problems, the present invention provides a method for preparing a magnetic sensor, including:
providing a semiconductor substrate, wherein a first metal layer and a dielectric layer are sequentially formed on the semiconductor substrate;
forming a groove in the dielectric layer, wherein part of the first metal layer is exposed by the groove;
forming a magnetic material film layer, wherein the magnetic material film layer covers the dielectric layer and the groove;
removing the magnetic material film layer at the bottom of the groove to expose part of the first metal layer;
forming a second metal layer in the groove, wherein the second metal layer fills the groove;
wherein the magnetic material film layer is interconnected with the semiconductor substrate via the second metal layer and the first metal layer.
Optionally, in the method for manufacturing a magnetic sensor, before forming the magnetic material film layer, the method for manufacturing a magnetic sensor further includes:
a first barrier layer is formed within the trench.
Optionally, in the method for manufacturing a magnetic sensor, the material of the first barrier layer includes silicon nitride, and the thickness range of the first barrier layer is:
optionally, in the method for manufacturing a magnetic sensor, after removing the magnetic material film layer at the bottom of the trench, the first blocking layer at the bottom of the trench is removed.
Optionally, in the method for manufacturing a magnetic sensor, before removing the magnetic material film layer at the bottom of the trench to expose a portion of the first metal layer, the method for manufacturing a magnetic sensor further includes:
and forming a protective layer and a second barrier layer on the magnetic material film layer in sequence.
Optionally, in the method for manufacturing a magnetic sensor, the material of the protective layer includes a nitriding tan; the material of the second barrier layer comprises silicon nitride, and the thickness range of the second barrier layer is as follows:
optionally, in the method for manufacturing a magnetic sensor, before removing the magnetic material film layer at the bottom of the trench, the second barrier layer and the protective layer at the bottom of the trench are sequentially removed.
Optionally, in the method for manufacturing a magnetic sensor, an ion beam etching process is used to remove the magnetic material film layer at the bottom of the trench.
Optionally, in the method for manufacturing a magnetic sensor, the material of the magnetic material film layer includes nickel-iron alloy; the materials of the first metal layer and the second metal layer comprise aluminum or titanium nitride.
Optionally, in the method for manufacturing a magnetic sensor, a cmos circuit is formed on the semiconductor substrate.
In summary, the present invention provides a method for preparing a magnetic sensor, including: first, a trench is formed in the dielectric layer on the semiconductor substrate, the trench exposing a portion of the first metal layer. Then, a magnetic material film layer is formed on the dielectric layer and in the groove. And removing the magnetic material film layer at the bottom of the groove to expose part of the first metal layer. And finally, forming a second metal layer in the groove, wherein the second metal layer fills and covers the groove. Therefore, the invention passes through a groove, and the magnetic material film layer is formed in the groove, and then the second metal layer is formed, so that the magnetic material film layer is interconnected with the semiconductor substrate through the second metal layer and the first metal layer. The first metal layer and the second metal layer are connected without forming a metal contact hole structure, so that the invention not only simplifies the process flow, but also reduces the use of masks, greatly reduces the preparation cost and improves the preparation efficiency.
Drawings
FIGS. 1-4 are schematic structural views of a magnetic sensor according to the present invention formed by the steps of a method for manufacturing the magnetic sensor;
FIG. 5 is a flowchart of a method for manufacturing a magnetic sensor according to an embodiment of the present invention;
FIGS. 6-10 are schematic structural views of a magnetic sensor according to an embodiment of the present invention;
wherein, the reference numerals illustrate:
100-a substrate; 101-a first connection layer; 102-a dielectric layer; 103 a-unfilled contact holes; 103 b-the filled contact hole; 104-a second connection layer; 105-a magnetic device layer;
10-a semiconductor substrate; 11-a first metal layer; 12-a dielectric layer; 13-a hard mask layer; 14-a first barrier layer; 15-a magnetic material film layer; 16-a protective layer; 17-a second barrier layer; 18-a second metal layer; p-trenches.
Detailed Description
As can be seen from the foregoing, in the conventional interconnection process between the MEMS device manufactured based on AMR and the CMOS integrated circuit, as shown in fig. 1 to 4, the first connection layer 101 and the dielectric layer 102 are formed on the substrate 100 where the CMOS integrated circuit is located, and a plurality of contact holes 103a are formed in the dielectric layer 102, and then tungsten material is filled in the contact holes 103 a. Next, a second connection layer 104 is formed on the contact hole 103b filled with tungsten material. Wherein, the materials of the first connection layer 101 and the second connection layer 104 include metals, which may be selected from: aluminum or titanium nitride. Finally, after the second connection layer 104 is formed, a patterned magnetic device layer 105 is formed on the second connection layer 104, thereby realizing interconnection of the MEMS device manufactured based on AMR with the CMOS integrated circuit through the first connection layer 101, the contact hole 103b, and the second connection layer 104.
However, in terms of the existing process flow, a corresponding mask layer needs to be prepared when the contact hole 103b is prepared and the second connection layer 104 is formed, which not only causes complicated process flow, but also causes high preparation cost. Therefore, the invention provides a novel preparation method of the magnetic sensor, which is used for reducing the preparation of a mask layer, lowering the cost and simplifying the flow.
The following describes a method for manufacturing a magnetic sensor according to the present invention in further detail with reference to the accompanying drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention. Furthermore, the structures shown in the drawings are often part of actual structures. In particular, the drawings are shown with different emphasis instead being placed upon illustrating the various embodiments.
In order to solve the above-mentioned technical problems, this embodiment provides a method for manufacturing a magnetic sensor, please refer to fig. 5, which includes:
step one S10: providing a semiconductor substrate, wherein a first metal layer and a dielectric layer are sequentially formed on the semiconductor substrate;
step two S20: forming a groove in the dielectric layer, wherein part of the first metal layer is exposed by the groove;
step three S30: forming a magnetic material film layer, wherein the magnetic material film layer covers the dielectric layer and the groove;
step four, S40: removing the magnetic material film layer at the bottom of the groove to expose part of the first metal layer;
step five S50: forming a second metal layer in the groove, wherein the second metal layer fills the groove;
wherein the magnetic material film layer is interconnected with the semiconductor substrate via the second metal layer and the first metal layer.
The following specifically describes a method for manufacturing the magnetic sensor according to the present embodiment according to fig. 6 to 10:
step one S10: referring to fig. 6, a semiconductor substrate 10 is provided, and a first metal layer 11 and a dielectric layer 12 are sequentially formed on the semiconductor substrate 10.
The semiconductor substrate 10 has a CMOS circuit formed thereon. Optionally, the material of the first metal layer 11 includes, but is not limited to, aluminum or titanium nitride, for interconnecting the CMOS circuit on the semiconductor substrate 10 with other semiconductor structures. The dielectric layer 12 is made of silicon oxide to isolate and protect the semiconductor substrate 10.
Step two S20: referring to fig. 7, a trench P is formed in the dielectric layer 12, and the trench P exposes a portion of the first metal layer 11.
In order to form the trench P in the dielectric layer 12, a common process is to form a hard mask layer 13 on the dielectric layer 12, where the hard mask layer 13 is made of silicon nitride. After patterning, an opening is formed in the hard mask layer 13 at the position where the trench P is to be formed on the dielectric layer 12, that is, the dielectric layer 12 is etched by using the hard mask layer 13 as a mask, so as to form the trench P. The trench P penetrates the dielectric layer 12. Further, there are various methods for etching to form the trench P, and alternatively, a dry etching or wet etching process is used, which is not limited to this embodiment.
Step three S30: referring to fig. 8, a magnetic material film layer 15 is formed, and the magnetic material film layer 15 covers the dielectric layer 12 and the trench. The magnetic material film 15 is made of nickel-iron alloy, which is a common material in magnetic sensors.
After the trench P is formed, the hard mask layer 13 is removed, and a device layer of the magnetic sensor is further formed. Wherein, before forming the magnetic material film layer 15, a first barrier layer 14 is formed for isolating and protecting the semiconductor substrate 10 and the magnetic material film layer 15.Optionally, the material of the first barrier layer 14 includes silicon nitride, and the thickness of the first barrier layer 14 ranges from:optionally +.>Or->
After the magnetic material film layer 15 is formed, a protective layer 16 is formed on the first magnetic material layer, and a second barrier layer 17 is formed on the protective layer 16. The material of the protection layer 16 includes a nitriding pad. The protective layer 16 and the magnetic material film layer 15 are combined into a magnetic device layer. Wherein the protection layer 16 is mainly used for protecting the magnetic material film layer 15. The second barrier layer 17 is used to isolate and protect the protective layer 16 and the magnetic material film layer 15. The material of the second barrier layer 17 includes silicon nitride, and the thickness of the second barrier layer 17 ranges from:can be selected asOr->
Step four, S40: referring to fig. 9, the magnetic material film layer 15 at the bottom of the trench P is removed to expose a portion of the first metal layer 11.
Since the bottom of the trench P has the first barrier layer 14, the magnetic material film layer 15, the protective layer 16, and the second barrier layer 17 in this order. Therefore, in step four, the second barrier layer 17, the protective layer 16, the magnetic material film layer 15, and the first barrier layer 14 need to be removed one by one, so that a portion of the first metal layer 11 opposite to the trench bottom is exposed. Further, an ion beam etching process may be used to remove the second blocking layer 17, the protective layer 16, the magnetic material film layer 15, and the first blocking layer 14, respectively.
Step five S50: referring to fig. 10, a second metal layer 18 is formed in the trench, and the second metal layer 18 fills the trench P.
Alternatively, the trench P is filled using a physical vapor deposition or sputtering process or the like to form the second metal layer 18. The material of the first metal layer 11 includes, but is not limited to, aluminum or titanium nitride. Thus, the connection of the magnetic material film layer 19 to the semiconductor substrate 10 can be achieved by the interconnection of the second metal layer 18 and the first metal layer 11 without preparing a metal hole structure.
In summary, in the method for manufacturing a magnetic sensor according to the present embodiment, the trench P is formed to replace the contact hole 103b in the prior art, and in addition, the magnetic material film layer 15 is formed in the trench P, and then the second metal layer 18 is formed, so that the second metal layer 18 is directly connected to the first metal layer 11, so as to implement interconnection between the magnetic material film layer 15 and the semiconductor substrate 10. Not only simplifying the process flow, but also reducing the use of masks, greatly reducing the preparation cost and improving the preparation efficiency.
The above description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.
Claims (9)
1. A method for manufacturing a magnetic sensor, the method comprising:
providing a semiconductor substrate, wherein a first metal layer and a dielectric layer are sequentially formed on the semiconductor substrate;
forming a hard mask layer on the dielectric layer, and carrying out patterning treatment on the hard mask layer;
forming a groove in the dielectric layer by taking the hard mask layer after patterning treatment as a mask, wherein part of the first metal layer is exposed by the groove;
forming a magnetic material film layer, wherein the magnetic material film layer covers the dielectric layer and the groove;
removing the magnetic material film layer at the bottom of the groove by adopting an ion beam etching process so as to expose part of the first metal layer;
forming a second metal layer in the groove, wherein the second metal layer fills the groove;
wherein the film of the sexual material is interconnected with the semiconductor substrate via the second metal layer and the first metal layer.
2. The method for manufacturing a magnetic sensor according to claim 1, wherein before forming the magnetic material film layer, the method for manufacturing a magnetic sensor further comprises:
a first barrier layer is formed within the trench.
3. The method for manufacturing a magnetic sensor according to claim 2, wherein the material of the first blocking layer comprises silicon nitride, and the thickness of the first blocking layer ranges from:
4. the method of manufacturing a magnetic sensor according to claim 2, wherein the first blocking layer at the bottom of the trench is removed after the magnetic material film layer at the bottom of the trench is removed.
5. The method of manufacturing a magnetic sensor according to claim 1, wherein before removing the magnetic material film layer at the bottom of the trench to expose a part of the first metal layer, the method of manufacturing a magnetic sensor further comprises:
and forming a protective layer and a second barrier layer on the magnetic material film layer in sequence.
6. The method of manufacturing a magnetic sensor according to claim 5, wherein the material of the protective layer comprises a nitriding tan; the material of the second barrier layer comprises silicon nitride, and the thickness range of the second barrier layer is as follows:
7. a method for manufacturing a magnetic sensor according to claim 5, wherein the second blocking layer and the protective layer at the bottom of the trench are sequentially removed before the magnetic material film layer at the bottom of the trench is removed.
8. The method of manufacturing a magnetic sensor according to claim 1, wherein the magnetic material film layer comprises nickel-iron alloy; the materials of the first metal layer and the second metal layer comprise aluminum or titanium nitride.
9. The method of manufacturing a magnetic sensor according to claim 1, wherein a COMS circuit is formed on the semiconductor substrate.
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| CN202011266518.1A CN112289925B (en) | 2020-11-12 | 2020-11-12 | Method for preparing magnetic sensor |
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| CN202011266518.1A CN112289925B (en) | 2020-11-12 | 2020-11-12 | Method for preparing magnetic sensor |
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| CN104347488A (en) * | 2013-08-07 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | Forming method of interconnection structure |
| CN110040679A (en) * | 2019-04-19 | 2019-07-23 | 上海华虹宏力半导体制造有限公司 | A kind of magnetic sensor and preparation method thereof |
| CN110137345A (en) * | 2019-05-30 | 2019-08-16 | 上海华虹宏力半导体制造有限公司 | A kind of magnetic sensor and preparation method thereof |
| CN110444531A (en) * | 2019-08-23 | 2019-11-12 | 上海华虹宏力半导体制造有限公司 | Electric leakage current test structure of 3D Magnetic Sensor and forming method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3157060B1 (en) * | 2010-12-17 | 2018-03-07 | Everspin Technologies, Inc. | Magnetic random access memory integration having improved scaling |
| CN105336847A (en) * | 2014-06-03 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of three-dimensional magnetic resistance sensor, and electronic device |
| US10270026B2 (en) * | 2017-02-24 | 2019-04-23 | Taiwan Semiconductor Manufacturing Company Ltd. | Multilayered spacer structure for a magnetic tunneling junction and method of manufacturing |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104347488A (en) * | 2013-08-07 | 2015-02-11 | 中芯国际集成电路制造(上海)有限公司 | Forming method of interconnection structure |
| CN110040679A (en) * | 2019-04-19 | 2019-07-23 | 上海华虹宏力半导体制造有限公司 | A kind of magnetic sensor and preparation method thereof |
| CN110137345A (en) * | 2019-05-30 | 2019-08-16 | 上海华虹宏力半导体制造有限公司 | A kind of magnetic sensor and preparation method thereof |
| CN110444531A (en) * | 2019-08-23 | 2019-11-12 | 上海华虹宏力半导体制造有限公司 | Electric leakage current test structure of 3D Magnetic Sensor and forming method thereof |
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