Background
A Liquid Crystal Display (LCD) is a new Display device that has been rapidly developed recently and occupies the mainstream Display application market, and has many advantages of light weight, high resolution, fast response speed, low power consumption, good Display quality, and the like. The method is widely applied to the application fields of common display devices such as televisions, electronic instruments, mobile phones and computers. The promotion of living standard is driving "intellectuality" to walk into the life, if the TV only possesses the display function, can progressively be eliminated in the life of coming, consequently, the LCD display trade is also constantly upgrading to adapt to more work and life occasion, like electronic contest screen, on-vehicle screen, folding screen, touch screen etc..
In the LCD display module in the prior art, the entire surface of the transparent conductive layer ITO is covered on the color filter substrate, and the area of the transparent conductive layer ITO is equal to the area of the color filter substrate. The design of the transparent conductive layer ITO can not fully utilize the design space of the color filter substrate, and is not beneficial to the in-plane integrated design of the LCD display module, and the ITO signal of the transparent conductive layer covered on the whole surface can shield the in-plane communication signal of the LCD display module.
Disclosure of Invention
In order to overcome the defects of the prior art, embodiments of the present application provide an LCD display module and a method for manufacturing the same, in which an area covered by a transparent conductive layer ITO is changed, and an integrated area is manufactured in an area not covered by the transparent conductive layer ITO, so as to implement in-plane integration of the LCD display module.
The embodiment of the invention provides an LCD display module, which comprises an operable area and a non-operable area; the operable area is arranged in the central area of the LCD display module, and the non-operable area is arranged at the periphery of the operable area; the area of the operable region is larger than that of the non-operable region; an integration region is also disposed within the non-operational region.
According to the LCD display module provided by the embodiment of the invention, the LCD display module at least comprises a thin film transistor substrate, a color filter substrate and a transparent conducting layer, wherein the color filter substrate is arranged on the thin film transistor substrate, and the transparent conducting layer is arranged on the color filter substrate.
According to the LCD display module provided by the embodiment of the invention, the transparent conductive layer partially covers the color filter substrate.
According to the LCD display module provided by the embodiment of the invention, the transparent conducting layer covers the operable area of the LCD display module, and the area of the transparent conducting layer is equal to that of the operable area of the LCD display module; the non-operable area is positioned at the peripheral edge of the color filter substrate.
According to the LCD display module provided by the embodiment of the present invention, the transparent conductive layer is made of ito.
According to the LCD display module provided by the embodiment of the present invention, the integrated area in the non-operable area is designed as a whole, that is, the whole integrated area has an integrated function.
According to the LCD display module provided by the embodiment of the present invention, the integrated area in the non-operable area is designed in a blocking manner, that is, the integrated area has a plurality of blocks, the integrated area realizes a plurality of integration functions, and each block of the integrated area has an integration function.
The embodiment of the invention also provides a manufacturing method of the LCD display module, which comprises the following steps:
step S1, manufacturing a layer of color filter substrate on the thin film transistor substrate;
step S2, depositing a transparent conductive layer on the color filter substrate;
step S3, manufacturing an integrated area at the peripheral edge of the color filter substrate;
the thin film transistor substrate comprises an operable region and a non-operable region, the area of the operable region is larger than that of the non-operable region, the transparent conducting layer covers the operable region, and the integration region is arranged in the non-operable region.
According to the method for manufacturing the LCD display module, the integrated area in the non-operable area is designed integrally, namely the whole integrated area has an integrated function.
According to the method for manufacturing the LCD display module, the integrated area in the non-operable area is designed in a blocking mode, namely the integrated area is provided with a plurality of blocks, the integrated area achieves multiple integration functions, and each block of the integrated area has one integration function.
The invention has the beneficial effects that: according to the LCD display module and the manufacturing method thereof provided by the embodiment of the invention, the transparent conducting layer ITO which is covered with the color filter on the whole surface in the prior art is set to only cover the corresponding area of the operable area in the LCD display module, and the transparent conducting layer ITO is not arranged in the non-operable area in the LCD display module. And an integrated area is arranged in the non-operable area, and the integrated area is designed in a whole mode or in blocks. By adding various integration schemes in the non-operable area, for example, designing a metal coil in the integrated area, and introducing a Near Field Communication (NFC) function or other integration functions such as other antenna coils, the in-plane integration of the LCD display module is realized.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Fig. 1 is a schematic structural diagram of an LCD display module according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of an LCD display module according to an embodiment of the present invention.
Referring to fig. 1 and 2, the LCD display module may be specifically divided into an operable area 20 occupying a large portion of the LCD display module and a non-operable area 30 occupying a small portion and distributed around the operable area 20. The operable area 20 is disposed in a central area of the LCD display module, and the non-operable area 30 is disposed around the operable area 20. Wherein the operable region 20 has an area substantially larger than the non-operable region 30. An integrated area 104 is further disposed in the non-operable area 30, and the integrated area 104 has a plurality of integrated functions, including but not limited to an antenna coil function and other integrated functions such as a Near Field Communication (NFC) function.
Specifically, the LCD display module at least includes a thin film transistor substrate 101, a color filter substrate 102, and a transparent conductive layer 103. The color filter substrate 102 is disposed on the thin film transistor substrate 101, the transparent conductive layer 103 is disposed on the color filter substrate 102, and the transparent conductive layer 103 partially covers the color filter substrate 102. The material of the transparent conductive layer 103 is indium tin oxide.
As shown in fig. 3, the thin film transistor substrate 101 includes: a first polyimide film layer 1 disposed on the bottom; the insulating layer 2 is arranged above the first polyimide film layer 1; and the second polyimide film layer 3 is arranged above the isolation layer 2, and the second polyimide film layer 3 is isolated from the first polyimide film layer 1 through the isolation layer 2. A buffer layer 4, wherein the buffer layer 4 is disposed on the second polyimide thin film layer 3, and in the present embodiment, the buffer layer 4 is silicon oxide (SiO)x) The material is made; an active layer 5, the active layer 5 being disposed above the buffer layer 4, the active layer 5 being subjected to a patterning process; a first gate insulating layer 6, wherein the first gate insulating layer 6 is disposed above the active layer 5 and completely covers the active layer 5, and in the present embodiment, the first gate insulating layer 6 is silicon oxide (SiO)x) The material is made; a first gate layer 7, the first gate layer 7 being disposed on the first gate insulating layer 6, the first gate layer 7 being subjected to a patterning process; a second gate insulating layer 8, the second gate insulating layer 8 being disposed over the first gate layer 7The second gate insulating layer 8 completely covers the first gate layer 7; a second gate layer 9, the second gate layer 9 being disposed over the second gate insulating layer 8, the second gate layer 9 being subjected to a patterning process; the insulating isolation layer 10 is arranged above the second gate layer 9, and the insulating isolation layer 10 forms a via hole through photoetching and dry etching; the source drain layer 11 penetrates through the insulating isolation layer 10, the first gate insulating layer 6 and the second gate insulating layer 8 through the through holes to be connected with the active layer 5; the source drain layer 11 forms a data pattern by photolithography and wet etching. And the covering layer 12 is arranged above the source drain layer 11.
Specifically, as shown in fig. 1, the transparent conductive layer 103 covers only the operable region 20 of the LCD display module, that is, the area of the transparent conductive layer 103 is equal to the area of the operable region 20 of the LCD display module; the transparent conductive layer 103 is not disposed on the non-operable region 30, and the non-operable region 30 is located at a peripheral edge of the color filter substrate 102.
As shown in fig. 1, in the non-operational area 30, the integrated area 104 is designed as a whole, that is, the whole integrated area 104 realizes an integrated function. For example, a metal coil is added in the integrated area 104, an NFC function is introduced, or other integrated functions such as manufacturing an antenna coil and collecting signals are performed.
Fig. 4 is a schematic structural diagram of another LCD display module according to an embodiment of the present invention. Fig. 5 is a schematic cross-sectional view of another LCD display module structure according to an embodiment of the present invention.
Referring to fig. 4 and 5, the LCD display module can be specifically divided into an operable area 20 occupying a large portion of the LCD display module and a non-operable area 30 occupying a small portion and distributed around the operable area 20. The operable area 20 is disposed in a central area of the LCD display module, and the non-operable area 30 is disposed around the operable area 20. Wherein the operable region 20 has an area substantially larger than the non-operable region 30. An integrated area 104 is also disposed within the non-operational area 30, and the integrated area 104 has a plurality of integrated functions including, but not limited to, an antenna coil function and an NFC function.
Specifically, the LCD display module at least includes a thin film transistor substrate 101, a color filter substrate 102, and a transparent conductive layer 103. The color filter substrate 102 is disposed on the thin film transistor substrate 101, the transparent conductive layer 103 is disposed on the color filter substrate 102, and the transparent conductive layer 103 partially covers the color filter substrate 102. The material of the transparent conductive layer 103 is indium tin oxide.
As shown in fig. 3, the thin film transistor 101 includes: a first polyimide film layer 1 disposed on the bottom; the insulating layer 2 is arranged above the first polyimide film layer 1; and the second polyimide film layer 3 is arranged above the isolation layer 2, and the second polyimide film layer 3 is isolated from the first polyimide film layer 1 through the isolation layer 2. A buffer layer 4, wherein the buffer layer 4 is disposed on the second polyimide thin film layer 3, and in the present embodiment, the buffer layer 4 is silicon oxide (SiO)x) The material is made; an active layer 5, the active layer 5 being disposed above the buffer layer 4, the active layer 5 being subjected to a patterning process; a first gate insulating layer 6, wherein the first gate insulating layer 6 is disposed above the active layer 5 and completely covers the active layer 5, and in the present embodiment, the first gate insulating layer 6 is silicon oxide (SiO)x) The material is made; a first gate layer 7, the first gate layer 7 being disposed on the first gate insulating layer 6, the first gate layer 7 being subjected to a patterning process; a second gate insulating layer 8, the second gate insulating layer 8 being disposed over the first gate layer 7, the second gate insulating layer 8 completely covering the first gate layer 7; a second gate layer 9, the second gate layer 9 being disposed over the second gate insulating layer 8, the second gate layer 9 being subjected to a patterning process; an insulating and insulating layer 10, said insulating and insulating layer 10 being arranged onAbove the second gate layer 9, the insulating isolation layer 10 is subjected to photolithography and dry etching to form a via hole; the source drain layer 11 penetrates through the insulating isolation layer 10, the first gate insulating layer 6 and the second gate insulating layer 8 through the through holes to be connected with the active layer 5; the source drain layer 11 forms a data pattern by photolithography and wet etching. And the covering layer 12 is arranged above the source drain layer 11.
Specifically, as shown in fig. 4, the transparent conductive layer 103 only covers the operable region 20 of the LCD display module, that is, the area of the transparent conductive layer 103 is equal to the area of the operable region 20 of the LCD display module; the transparent conductive layer 103 is not disposed on the non-operable region 30, and the non-operable region 30 is located at a peripheral edge of the color filter substrate 102.
As shown in fig. 4, in the non-operational area 30, the integrated area 104 is designed as a block, that is, the whole integrated area 104 is divided into different blocks to respectively implement different integrated functions, and each block of the integrated area 104 has one integrated function. For example, different metal coils are respectively added to different blocks in the integration area 104, and an NFC function is introduced or other integration functions such as manufacturing an antenna coil and collecting signals are performed.
Fig. 6 is a schematic flow chart illustrating a method for manufacturing an LCD display module according to an embodiment of the present invention. Referring to fig. 6, the present embodiment further provides a method for manufacturing an LCD display module, including:
step S1, manufacturing a layer of color filter substrate on the thin film transistor substrate;
step S2, depositing a transparent conductive layer on the color filter substrate;
step S3, manufacturing an integrated area at the peripheral edge of the color filter;
the thin film transistor substrate comprises an operable region and a non-operable region, the area of the operable region is larger than that of the non-operable region, the transparent conducting layer covers the operable region, and the integration region is arranged in the non-operable region.
Specifically, in the step S3, within the non-operable area, the integrated area is designed as a whole, that is, the whole integrated area has an integrated function. For example, a metal coil is added in the integrated area, and an NFC function is introduced or other integrated functions such as manufacturing an antenna coil and collecting signals are performed.
Specifically, in step S3, the integrated area is designed as a block within the non-operable area, that is, the integrated area has a plurality of blocks, and the whole integrated area is divided into different blocks to realize different integrated functions respectively. For example, different metal coils are respectively added in different blocks in the integrated area, an NFC function is introduced or other integrated functions such as manufacturing an antenna coil and collecting signals are manufactured, and each block of the integrated area has one integrated function.
In the currently common LCD display module, the entire surface of the transparent conductive layer ITO is covered on the color filter substrate, and the area of the transparent conductive layer ITO is equal to the area of the color filter substrate. The design of the transparent conductive layer ITO can not fully utilize the design space of the color filter substrate, and is not beneficial to the in-plane integrated design of the LCD display module, and the ITO signal of the transparent conductive layer covered on the whole surface can shield the in-plane communication signal of the LCD display module. In the LCD display module and the method for manufacturing the same according to the embodiments of the present invention, the transparent conductive layer ITO that covers the entire color filter in the prior art is set to only cover the corresponding area of the operable area in the LCD display module, and the transparent conductive layer ITO is not set in the non-operable area in the LCD display module. And an integrated area is arranged in the non-operable area, and the integrated area is designed in a whole mode or in blocks. By adding various integration schemes in the non-operable area, such as designing a metal coil in the integrated area, introducing an NFC function or other integrated functions such as an antenna coil, and the like, the in-plane integration of the LCD display module is realized.
The LCD display module and the manufacturing method thereof provided by the embodiments of the present application are described in detail above, and the principles and embodiments of the present application are explained herein by applying specific examples, and the description of the embodiments above is only used to help understand the technical solutions and core ideas of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.