CN112230461A

CN112230461A - Radiation device

Info

Publication number: CN112230461A
Application number: CN202010362576.8A
Authority: CN
Inventors: 李汉郎; 李宜音; 洪堂钦; 陈佩娸
Original assignee: Innolux Display Corp
Current assignee: Innolux Corp
Priority date: 2019-07-15
Filing date: 2020-04-30
Publication date: 2021-01-15
Also published as: US11217884B2; US20210021023A1

Abstract

The present invention provides a radiation device comprising: a first substrate; a second substrate; the dielectric layer is arranged between the first substrate and the second substrate; the film layer structure is arranged on the first substrate; wherein the resistivity of the film layer structure is 10⁸To 5X 10¹⁴Ohm centimeter (omega cm).

Description

Radiation device

Technical Field

The present invention relates to a radiation device, and more particularly, to a radiation device that increases the frequency modulation range of a radiation signal.

Background

Some electronic products are equipped with communication capabilities, such as a radiation device, but the performance of the radiation device still needs to be improved, so that it can increase the frequency modulation range of the radiation signal, for example.

It is therefore an object of the present invention to provide a radiation device that increases the modulation range of the frequency of a radiation signal.

Disclosure of Invention

An embodiment of the present invention provides a radiation device including: a first substrate; a second substrate; the dielectric layer is arranged between the first substrate and the second substrate; the film layer structure is arranged on the first substrate; wherein the resistivity (resistivity) of the film layer structure is 10⁸To 5X 10¹⁴Ohm centimeter (omega cm).

Another embodiment of the present invention provides a radiation device including: a first substrate; a second substrate; the dielectric layer is arranged between the first substrate and the second substrate; the film layer structure is arranged on the first substrate; wherein the dielectric constant (dielectric constant) of the film structure is between 3.5 and 5.

The radiation device can increase the frequency modulation range of the radiation signal and improve the efficiency of the radiation device.

Drawings

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below, wherein:

fig. 1 is a top view of a radiation device according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view of a modulation unit of a radiation device according to an embodiment of the present invention.

Fig. 3 is a cross-sectional view of a modulation unit of a radiation device according to an embodiment of the present invention.

FIG. 4 is a graph showing the driving voltage versus capacitance for a radiation device with different alignment layers as the film structure.

Description of the symbols

1: radiation device

11: modulation unit

111: first substrate

1111: a first electrode

1112: a first insulating layer

1113: a first alignment layer

112: second substrate

1121: second electrode

1122: a second insulating layer

1123: second alignment layer

113: dielectric layer

114: film layer structure

115: film layer structure

h 1: thickness of

h 2: thickness of

Detailed Description

The following description provides many different embodiments, or examples, for implementing different features of the invention. The particular examples set forth below are illustrative only and are not intended to be limiting. For example, the description of a structure having a first feature over or on a second feature includes direct contact between the first and second features, or interposing a further feature between the first and second features, such that the first and second features are not in direct contact.

The terms first and second, etc. in this specification are used for clarity of explanation only and do not correspond to and limit the scope of the claims. The terms first feature, second feature, and the like are not intended to be limited to the same or different features.

Spatially relative terms, such as above or below, are used herein for ease of description of one element or feature relative to another element or feature in the figures. Devices used or operated in different orientations than those depicted in the figures are also included.

As used herein, the term "about" or "approximately" generally means within 10%, or within 5%, or within 3%, or within 2%, or within 1%, or within 0.5% of a given value or range. The quantities given herein are approximate quantities, i.e., the meanings of "about" and "approximately" are implied unless otherwise indicated. Moreover, the term "range between a first value and a second value" means that the range includes the first value, the second value, and other values therebetween.

In addition, the first element is not limited to being perpendicular to the second element at an angle of 90 degrees, but includes acceptable tolerance ranges, such as an angle between 85 degrees and 95 degrees. The first element described herein as being parallel to the second element is not limited to an included angle of 0 degrees between the first element and the second element, but includes acceptable tolerance ranges, such as an included angle of-5 degrees to 5 degrees between the first element and the second element.

The shapes, dimensions, and thicknesses of the figures may not be drawn to scale or simplified for clarity of illustration, but are provided for illustration only. According to some embodiments of the present invention, the radiation device may include an antenna device, a liquid crystal display device, a sensing device, a light emitting device, a splicing device, other suitable devices, or a combination thereof. The radiation device can be a bendable or flexible electronic device. The antenna device may be, for example, a liquid crystal antenna, but is not limited thereto. The splicing device may be, for example, an antenna splicing device, but is not limited thereto. It should be understood that the electronic device can be any permutation and combination of the foregoing, but the invention is not limited thereto. The radiation device in an embodiment of the present invention may be, for example, an antenna device, but is not limited thereto.

Please refer to fig. 1 and fig. 2. Fig. 1 is a top view of a radiation device 1 according to an embodiment of the present invention. The radiation device 1 of the present invention can be operated in a high frequency range, and may be, for example, a liquid crystal antenna operated in a high frequency range. The high frequency range is, for example, greater than or equal to 1 gigahertz (GHz) and less than or equal to 80 gigahertz (GHz), but is not limited thereto. The radiation device 1 may comprise a plurality of modulation units 11. The plurality of modulation units 11 form a modulation unit array, and each modulation unit 11 is controlled by an electrical signal to adjust the arrangement of media (e.g., liquid crystal molecules) in each modulation unit 11 so as to have different dielectric constants, so that the phase of the radiation signal transmitted or received by each modulation unit 11 can be controlled, and the direction of the radiation signal transmitted or received by the modulation unit array, that is, the radiation direction transmitted or received by the liquid crystal antenna, can be adjusted.

Fig. 2 is a sectional view of a line a-a' of the modulation unit 11 of the radiation device 1 according to an embodiment of the present invention. As shown in fig. 2, the modulation unit 11 may include a first substrate 111, a second substrate 112, and a dielectric layer 113. The first substrate 111 and the second substrate 112 are disposed opposite to each other, and the dielectric layer 113 is disposed between the first substrate 111 and the second substrate 112. In one embodiment, the first substrate 111 and the second substrate 112 may include a hard substrate or a soft substrate. The rigid substrate may comprise glass (glass), quartz (quartz), ceramic (ceramic), sapphire (sapphire), or other suitable materials, or combinations thereof. The flexible substrate may include Polyimide (PI), polyethylene terephthalate (PET), or other suitable materials, or combinations thereof. However, the materials of the first substrate 111 and the second substrate 112 are not limited thereto. The dielectric layer 113 may be a liquid crystal, such as a liquid crystal with electrically controlled Birefringence (electrically controlled Birefringence), but is not limited thereto.

The modulation unit 11 may further include a first electrode 1111 and a second electrode 1121. The first electrode 1111 may be directly or indirectly disposed on the first substrate 111, and the second electrode 1121 may be directly or indirectly disposed on the second substrate 112. The film structure 114 is disposed on the first electrode 1111, and the film structure 115 is disposed on the second electrode 1121. When the dielectric layer 113 is a liquid crystal, the film structure 114 may include a first alignment layer 1113, and the film structure 115 may include a second alignment layer 1123. The first alignment layer 1113 and the second alignment layer 1123 may include Polyimide (PI), but are not limited thereto. The surfaces of the first alignment layer 1113 and the second alignment layer 1123 can be rubbed to form grooves or photo-alignment to align the alignment directions of the liquid crystals, and provide a pre-tilt angle for the liquid crystals, so that the liquid crystals can have a better driving effect. In an embodiment, as shown in fig. 3, the film structure 114 may further include a first insulating layer 1112, and the first insulating layer 1112 is disposed between the first substrate 111 and the first alignment layer 1113. In one embodiment, as shown in fig. 3, the film structure 115 may further include a second insulating layer 1122, and the second insulating layer 1122 is disposed between the second substrate 112 and the second alignment layer 1123. The first and second insulating

layers

1112 and 1122 may include silicon oxide (SiOx), silicon nitride (SiNy), silicon oxynitride (SiOxNy), other suitable materials, or a combination thereof, but are not limited thereto. The structures of the first substrate 111 and the second substrate 112 in fig. 2 and 3 may be combined with each other, and are not limited to the combination of fig. 2 and 3.

The frequency modulation range of the radiation signal emitted by the radiation device 1 is affected by the modulation range of the equivalent capacitance in the modulation unit 11. Therefore, if the modulation range of the equivalent capacitance of the modulation unit 11 can be increased, the frequency modulation range of the radiation signal emitted by the radiation device 1 can be increased, and the performance of the radiation device can be improved. For example, as shown in fig. 2, the equivalent capacitance between the first electrode 1111 and the second electrode 1121 is the sum of the capacitance values of all the stacked layers between the two electrodes, including the film structure 114, the dielectric layer 113 and the film structure 115. For example, when the dielectric layer 113 is a liquid crystal, the equivalent capacitance between the first electrode 1111 and the second electrode 1121 is the sum of the capacitance of all the stacked layers between the two electrodes, including but not limited to the first alignment layer 1113, the dielectric layer 113, and the second alignment layer 1123.

In one embodiment of the present invention, the resistivity of at least one of the

film structures

114 and 115 is adjusted to increase the modulation range of the equivalent capacitance of the modulation unit 11. The voltage driving frequency of the radiation device 1 of the present invention, i.e. the driving frequency of the first electrode 1111 and the second electrode 1121 applying the voltage to the dielectric layer 113, can be between 1 hertz (Hz) and 1 kilohertz (KHz), but is not limited thereto. The resistivity of at least one of the film structure 114 or the film structure 115 may be adjusted to 10⁸To 5X 10¹⁴Ohm centimeter (Ω. Cm), or may be between 10¹²To 10¹⁴Between ohm centimeters. The modulation range of the equivalent capacitance of the radiation device 1 can be improved by adjusting the resistivity of the film structure 114 or the film structure 115. In one embodiment, the resistivities of the

film structures

114 and 115 may also be adjusted to 10⁸To 5X 10¹⁴Ohm cm, or may be between 10¹²To 10¹⁴Between ohm centimeters.

In one embodiment, for example, as shown in FIG. 2, when the first alignment layer 1113 is used as the film structure 114 and the second alignment layer 1123 is used as the film structure 115The resistivity of the first alignment layer 1113 or/and the second alignment layer 1123 may be adjusted to 10⁸To 5X 10¹⁴Ohm cm, or may be between 10¹²To 10¹⁴Between ohm centimeters, the modulation range of the equivalent capacitance of the radiation device 1 can be improved.

In one embodiment, for example, as shown in FIG. 3, when the film structure 114 includes the first alignment layer 1113 and the first insulating layer 1112, and the film structure 115 includes the second alignment layer 1123 and the second insulating layer 1122, the resistivity of the entire film structure 114 and/or the entire film structure 115 can be adjusted to 10⁸To 5X 10¹⁴Ohm cm, or may be between 10¹²To 10¹⁴Between ohm centimeters, the modulation range of the equivalent capacitance of the radiation device 1 can be improved.

In one embodiment, when the resistivity of the film structure 114 or the film structure 115 is adjusted within the above range, the thickness of at least one of the first alignment layer 1113 or the second alignment layer 1123 may be further adjusted to increase the modulation range of the equivalent capacitance of the modulation unit 11. For example, as shown in fig. 2 or fig. 3, the thickness of the first alignment layer 1113 in the film structure 114 and/or the thickness of the second alignment layer 1123 in the film structure 115 (e.g., h1 or h2 in fig. 2 or fig. 3) may be adjusted to be between 0.01 and 0.08 micrometers (μm), or may be adjusted to be between 0.03 and 0.06 micrometers, respectively. The thickness of the first alignment layer 1113 or/and the second alignment layer 1123 is adjusted to increase the modulation range of the equivalent capacitance of the radiation device 1, thereby increasing the frequency modulation range of the radiation signal emitted by the radiation device 1 and improving the performance of the radiation device.

In another embodiment, the dielectric constant of at least one of the

film structures

114 and 115 may be adjusted to increase the modulation range of the equivalent capacitance of the modulation unit 11. For example, the dielectric constant of at least one of the film structure 114 or the film structure 115 is adjusted to be between 3.5 and 5. In one embodiment, for example, as shown in fig. 2, when the first alignment layer 1113 is used as the film structure 114 and the second alignment layer 1123 is used as the film structure 115, the dielectric constant of the first alignment layer 1113 and/or the second alignment layer 1123 can be adjusted to be between 3.5 and 5, so as to improve the modulation range of the equivalent capacitance of the radiation device 1. In an embodiment, for example, as shown in fig. 3, when the film structure 114 includes the first alignment layer 1113 and the first insulating layer 1112, and the film structure 115 includes the second alignment layer 1123 and the second insulating layer 1122, the dielectric constant of the entire film structure 114 or/and the entire film structure 115 can be adjusted to be 3.5 to 5, so as to improve the modulation range of the equivalent capacitance of the radiation device 1.

In an embodiment, when the dielectric constant of the film structure 114 or the film structure 115 is adjusted within the foregoing range, the thickness of at least one of the film structure 114 or the film structure 115 may be further adjusted to increase the modulation range of the equivalent capacitance of the modulation unit 11. As described above, for example, as shown in fig. 2 or fig. 3, the thickness of the first alignment layer 1113 in the film structure 114 and/or the thickness of the second alignment layer 1123 in the film structure 115 may be adjusted to be between 0.01 and 0.08 micrometers, or may be adjusted to be between 0.03 and 0.06 micrometers, respectively, so as to enhance the performance of the radiation device.

The thickness of the first alignment layer 1113 is the maximum distance in the normal direction (e.g., Z direction in fig. 2 or 3) from the surface of the first substrate 111, and the thickness of the second alignment layer 1123 is the maximum distance in the normal direction (e.g., Z direction in fig. 2 or 3) from the surface of the second substrate 112.

According to the above embodiments, the radiation device 1 of the present invention can increase the modulation range of the equivalent capacitor of the modulation unit 11, thereby increasing the frequency modulation range of the radiation signal and improving the performance of the radiation device 1.

In the following, different embodiments of the invention are further described. In these embodiments, three alignment layers with different resistivities and different dielectric constants are used as the film structures to compare the modulation ranges of the equivalent capacitances of the modulation units 11 with the film structures with different characteristics.

These three alignment layers are referred to as PI-A, PI-B, PI-C, respectively. The resistivities and dielectric constants of the alignment layers PI-A, PI-B and PI-C are shown in Table 1 below. The alignment layers PI-a, PI-B, and PI-C are respectively applied to the film layer structure 114 and the film layer structure 115 of the modulation unit 11 of fig. 2, and are driven with a driving voltage frequency of 1 khz, and the equivalent capacitance of the modulation unit is measured when the driving voltage is from 0 volt (V) to 20V to obtain fig. 4. The modulation range of the equivalent capacitance of the modulation unit is also shown in table 1 below.

TABLE 1

The resistivity of the alignment layer PI-B is 7X 10¹³Ohm cm, dielectric constant 3.9, resistivity (10) as provided in one embodiment of the invention⁸To 5X 10¹⁴Ohm cm) and a dielectric constant (3.5 to 5). The resistivity of the alignment layer PI-A is 1.8X 10¹⁵Ohm cm, dielectric constant 4.5, resistivity greater than that provided by one embodiment of the invention (10)⁸To 5X 10¹⁴Ohm cm), but a dielectric constant in the range of the dielectric constant (3.5 to 5) proposed in one embodiment of the present invention. The resistivity of the alignment layer PI-C is 2X 10¹⁶Ohm cm, a dielectric constant of 3, a resistivity greater than that (10) provided by an embodiment of the present invention⁸To 5X 10¹⁴Ohm cm) and a dielectric constant less than the range of dielectric constants (3.5 to 5) set forth in one embodiment of the present invention. Therefore, the modulation ranges of the equivalent capacitances of the alignment layers PI-A and PI-B are measured respectively based on the alignment layer PI-C.

In fig. 4, the horizontal axis represents the driving voltage (in volts, V) and the vertical axis represents the capacitance (in farads, F). It can be seen from FIG. 4 that the capacitance values of the three are substantially the same when the driving voltage is 0V, and the equivalent capacitance value increases when the driving voltage increases, but when the driving voltage is 20V, the capacitance value of the modulation unit using the alignment layer PI-B is the largest, the capacitance value of the modulation unit using the alignment layer PI-A is the second largest, and the capacitance value of the modulation unit using the alignment layer PI-C is the smallest. Comparing the difference between the capacitance values of the three at 0V and 20V, for example, taking the difference of the equivalent capacitance of the modulation unit using the alignment layer PI-C as 100%, the modulation range of the equivalent capacitance using the alignment layer PI-A is 105%, and the modulation range of the equivalent capacitance using the alignment layer PI-B is 113.13%.

Through these embodiments, when the dielectric constant of the film structure is within the range provided by the present invention, the modulation range of the equivalent capacitance can be increased. When the resistivity of the film structure is within the range provided by the invention, the modulation range of the equivalent capacitance can be enlarged. Therefore, the invention enlarges the modulation range of the equivalent capacitor, increases the frequency modulation range of the radiation signal and improves the efficiency of the radiation device.

The above-disclosed features may be combined, modified, replaced, or interchanged with one or more of the disclosed embodiments in any suitable manner and are not limited to a particular embodiment.

While the present invention has been described with reference to various embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. Therefore, the above embodiments should not be taken as limiting the scope of the invention, which is defined by the following claims.

Claims

1. A radiation device, comprising:

a first substrate;

a second substrate;

the dielectric layer is arranged between the first substrate and the second substrate; and

the film layer structure is arranged on the first substrate;

wherein the resistivity of the film layer structure is 10⁸To 5X 10¹⁴Between ohm centimeters.

2. The inadiation apparatus of claim 1, wherein the film structure has a resistivity of 10¹²To 10¹⁴Between ohm centimeters.

3. The inadiation apparatus of claim 1, wherein the film structure comprises an alignment layer.

4. An irradiation device as set forth in claim 3, wherein said alignment layer has a thickness of between 0.01 and 0.08 μm.

5. The inadiation apparatus of claim 3, wherein the film structure further comprises:

an insulating layer disposed between the alignment layer and the first substrate.

6. A radiation device, comprising:

a first substrate;

a second substrate;

the film layer structure is arranged on the first substrate;

wherein the dielectric constant of the film layer structure is between 3.5 and 5.

7. The inadiation apparatus of claim 6, wherein the film structure comprises an alignment layer.

8. The inadiation apparatus of claim 7, wherein the alignment layer has a thickness between 0.01 and 0.08 microns.

9. The inadiation apparatus of claim 7, wherein the alignment layer has a thickness between 0.03 and 0.06 microns.

10. The inadiation apparatus of claim 7, wherein the film structure further comprises: