CN112217097A - Optical communication semiconductor laser and method for butt-joint growth of aluminum-containing quantum well active layer thereof - Google Patents
Optical communication semiconductor laser and method for butt-joint growth of aluminum-containing quantum well active layer thereof Download PDFInfo
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 147
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 147
- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 42
- 230000003287 optical effect Effects 0.000 title claims abstract description 22
- 238000004891 communication Methods 0.000 title claims abstract description 21
- 238000000407 epitaxy Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 210000001503 joint Anatomy 0.000 claims abstract description 11
- 230000008878 coupling Effects 0.000 claims abstract description 8
- 238000010168 coupling process Methods 0.000 claims abstract description 8
- 238000005859 coupling reaction Methods 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 66
- 229910052681 coesite Inorganic materials 0.000 claims description 33
- 229910052906 cristobalite Inorganic materials 0.000 claims description 33
- 239000000377 silicon dioxide Substances 0.000 claims description 33
- 235000012239 silicon dioxide Nutrition 0.000 claims description 33
- 229910052682 stishovite Inorganic materials 0.000 claims description 33
- 229910052905 tridymite Inorganic materials 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 9
- 230000007797 corrosion Effects 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 8
- 238000001259 photo etching Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 27
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 230000003647 oxidation Effects 0.000 abstract description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 10
- 238000011065 in-situ storage Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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Abstract
The invention relates to an optical communication semiconductor laser and an aluminum-containing quantum well active layer butt joint growth method thereof, wherein the method comprises the following steps: growing an aluminum-free passive waveguide layer on a substrate to complete first epitaxy; removing an aluminum-free passive waveguide layer in a first aluminum-containing quantum well active layer region preset on the primary epitaxial wafer, performing secondary epitaxy, and growing a first aluminum-containing quantum well active layer; and continuously removing the aluminum-free passive waveguide layer in the second aluminum-containing quantum well active layer region preset on the secondary epitaxial wafer, carrying out third epitaxy, and growing a second aluminum-containing quantum well active layer, wherein the aluminum-free passive waveguide layer is arranged between the first aluminum-containing quantum well active layer and the second aluminum-containing quantum well active layer at intervals. The epitaxial growth of the aluminum-containing quantum well active layer is carried out on the aluminum-free passive waveguide layer, so that the problem of oxidation of aluminum-containing materials is avoided, and the butt coupling growth quality is improved. Meanwhile, the active layer is made of high-performance aluminum-containing materials, so that the performance of the component can be improved.
Description
Technical Field
The invention belongs to the technical field of optical communication semiconductor lasers, and particularly relates to an optical communication semiconductor laser and an aluminum-containing quantum well active layer butt joint growing method thereof.
Background
Active layers with different light-emitting wavelengths are generally required to be adopted for different components in the photoelectric integrated chip, so that technologies such as multi-active-layer superposition, selective epitaxial growth, active-layer butt growth and the like are generally adopted, and by taking a typical electric absorption modulation integrated laser (EML) as an example, the advantages and the disadvantages of the technologies such as multi-active-layer superposition, selective epitaxial growth, active-layer butt growth and the like are analyzed in detail:
1. the multi-active layer adding method comprises the steps that an upper laser active layer and a lower modulator active layer are divided, the laser active layer in a modulator area is removed, the upper laser active layer is gradually reduced in a transition area from a laser to a modulator, and a light field in the laser active layer is gradually transferred to the lower modulator active layer;
2. selecting an epitaxial growth method, generally carrying out material growth on a mask substrate with two parallel SiO2 strips, wherein the growth rate of a gap between the strips is higher than that of a plane area without mask coverage, so that epitaxial materials with different thicknesses and compositions are formed in the gap area and the plane area to obtain different light-emitting wavelengths, and the method has gradual transition between the gap area and the plane area and high optical coupling efficiency, but the light-emitting wavelength of the area is also gradual transition, and the light-emitting wavelengths of a modulator and a laser area cannot be completely independently optimized;
3. the butt-joint coupling growth method comprises the steps of generally growing a laser material, removing the laser material in a modulator region, selecting materials required by the epitaxial growth modulator region in the removed part, and realizing the direct butt joint of waveguide transmission in the two active regions. The light emitting wavelength of the modulator and the laser region can be completely independently optimized by the method, but the growth process of the butt joint interface is complex, particularly the butt joint growth of aluminum-containing materials has the problem of aluminum material oxidation, the problems of growth holes and the like are caused, and the butt joint coupling efficiency is reduced. Therefore, in-situ etching is generally required to be performed in the reaction chamber before growth, and the oxide layer is removed and then grown, which further increases the complexity of the process.
On the other hand, indium gallium arsenide phosphide (InGaAsP) materials do not have the problem of oxidation, but aluminum gallium arsenide phosphide (AlGaInAs) materials have the characteristics of better high-temperature characteristics and lower threshold current compared with indium gallium arsenide phosphide (InGaAsP) materials, and AlGaInAs is more commonly used than InGaAsP materials, so that a method which can use AlGaInAs aluminum-containing materials and can avoid the oxidation of secondary epitaxial growth aluminum materials is needed.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides an optical communication semiconductor laser and an aluminum-containing quantum well active layer butt-joint growth method thereof. Meanwhile, the active layer is made of high-performance aluminum-containing materials, so that the performance of the component can be improved.
The technical scheme of the invention is realized as follows: the invention discloses a butt joint growing method of an aluminum-containing quantum well active layer of an optical communication semiconductor laser, which comprises the following steps:
and (3) first epitaxy: growing a first semiconductor epitaxial layer containing an aluminum-free passive waveguide layer on a substrate to complete first epitaxy, and obtaining a first epitaxial wafer;
and (3) second epitaxy: removing an aluminum-free passive waveguide layer in a first aluminum-containing quantum well active layer region preset on the primary epitaxial wafer, performing secondary epitaxy, and growing a second semiconductor epitaxial layer containing the first aluminum-containing quantum well active layer to obtain a secondary epitaxial wafer;
and (3) third epitaxy: and continuously removing the aluminum-free passive waveguide layer in the second aluminum-containing quantum well active layer region preset on the secondary epitaxial wafer, performing third epitaxy, and growing a third semiconductor epitaxial layer containing the second aluminum-containing quantum well active layer to obtain a third epitaxial wafer, wherein the aluminum-free passive waveguide layer is arranged between the first aluminum-containing quantum well active layer and the second aluminum-containing quantum well active layer on the third epitaxial wafer at intervals.
Further, growing a first semiconductor epitaxial layer including an aluminum-free passive waveguide layer on the substrate to complete a first epitaxy, specifically including: and growing an N-type buffer layer on the N-type substrate, and then sequentially growing an aluminum-free passive waveguide layer, an InP limiting layer and a contact layer on the N-type buffer layer to finish the first epitaxy.
Further, removing the aluminum-free passive waveguide layer in the first aluminum-containing quantum well active layer region preset on the primary epitaxial wafer, performing secondary epitaxy, and growing a second semiconductor epitaxial layer containing the first aluminum-containing quantum well active layer, specifically comprising:
growing a SiO2 layer on the upper surface of the primary epitaxial wafer, removing SiO2 in a first aluminum-containing quantum well active layer area preset on the primary epitaxial wafer by utilizing a photoetching process, removing an aluminum-free passive waveguide layer in the first aluminum-containing quantum well active layer area by utilizing SiO2 as a mask, covering a SiO2 layer outside the first aluminum-containing quantum well active layer area, carrying out selective epitaxy by utilizing the SiO2 as a mask, and growing a second semiconductor epitaxial layer containing the first aluminum-containing quantum well active layer only in the place where the aluminum-free passive waveguide layer is removed;
the second semiconductor epitaxial layer comprises an N-type buffer layer, a first aluminum-containing quantum well active layer, a P-type InP upper limiting layer and a contact layer which are sequentially grown from bottom to top, and the total thickness of the second semiconductor epitaxial layer is the same as the corrosion depth of the first aluminum-containing quantum well active layer region;
the first aluminum-containing quantum well active layer comprises an N-type lower limiting layer, a lower waveguide layer, a first strained multi-quantum well layer, an upper waveguide layer and a P-type upper limiting layer which are sequentially grown from bottom to top;
the total thickness of the first aluminum-containing quantum well active layer is the same as the thickness of the aluminum-free passive waveguide layer.
Further, continuously removing the aluminum-free passive waveguide layer in the second aluminum-containing quantum well active layer area preset on the secondary epitaxial wafer, performing third epitaxy, growing a third semiconductor epitaxial layer containing the second aluminum-containing quantum well active layer, and obtaining a third epitaxial wafer, wherein the third epitaxial wafer specifically comprises:
removing the SiO2 layer on the upper surface of the secondary epitaxial wafer, regrowing a SiO2 layer, removing SiO2 in a preset second aluminum-containing quantum well active layer area on the secondary epitaxial wafer by utilizing a photoetching process, removing an aluminum-free passive waveguide layer in the second aluminum-containing quantum well active layer area by utilizing SiO2 as a mask, covering the SiO2 layer at the position outside the second aluminum-containing quantum well active layer area, carrying out selective epitaxy by utilizing the SiO2 as the mask, and growing a third semiconductor epitaxial layer containing the second aluminum-containing quantum well active layer only at the position where the aluminum-free passive waveguide layer is removed;
the third semiconductor epitaxial layer comprises an N-type buffer layer, a second aluminum-containing quantum well active layer, a P-type InP upper limiting layer and a contact layer which are sequentially grown from bottom to top, and the total thickness of the second semiconductor epitaxial layer is the same as the corrosion depth of the first aluminum-containing quantum well active layer region;
the second aluminum-containing quantum well active layer comprises an N-type lower limiting layer, a lower waveguide layer, a second strain multi-quantum well layer, an upper waveguide layer and a P-type upper limiting layer which are sequentially grown from bottom to top;
the total thickness of the second aluminum-containing quantum well active layer is the same as the thickness of the aluminum-free passive waveguide layer.
Further, repeating the third epitaxial step, and continuously growing more semiconductor epitaxial layers containing aluminum-containing quantum well active layers on the third epitaxial wafer, wherein the aluminum-containing quantum well active layers are spaced from each other by aluminum-free passive waveguide layers; the total thickness of each aluminum-containing quantum well active layer is the same as that of the aluminum-free passive waveguide layer.
Further, the respective aluminum-containing quantum well active layers on the semiconductor substrate differ in light emission wavelength.
The invention discloses an optical communication semiconductor laser, which comprises a substrate, wherein an aluminum-free passive waveguide layer and at least two aluminum-containing quantum well active layers are arranged on the substrate side by side in the same horizontal plane, and the aluminum-containing quantum well active layers are in butt joint coupling through the aluminum-free passive waveguide layer.
Furthermore, a buffer layer is arranged on the substrate, an aluminum-free passive waveguide layer and at least two aluminum-containing quantum well active layers are arranged on the buffer layer, an InP limiting layer and a contact layer are arranged on the aluminum-free passive waveguide layer and the at least two aluminum-containing quantum well active layers, and the contact layer is positioned above the InP limiting layer.
Further, the aluminum-containing quantum well active layer comprises an N-type lower limiting layer, a lower waveguide layer, a strain multi-quantum well layer, an upper waveguide layer and a P-type upper limiting layer which are sequentially arranged from bottom to top, and the total thickness of the aluminum-containing quantum well active layer is the same as the thickness of the aluminum-free passive waveguide layer.
Further, the emission wavelength of each aluminum-containing quantum well active layer on the substrate is different.
The invention has at least the following beneficial effects: firstly growing an InP buffer layer on an InP substrate, then growing an aluminum-free passive waveguide layer to complete first epitaxy, then removing the aluminum-free passive waveguide layer in a first aluminum-containing quantum well active layer region, carrying out second epitaxy, and growing a first aluminum-containing quantum well active layer; and continuously removing the aluminum-free passive waveguide layer in the second aluminum-containing quantum well active layer region, performing third epitaxy, and growing a second aluminum-containing quantum well active layer, wherein the aluminum-free passive waveguide layer is arranged between the first and second aluminum-containing quantum well active layers at intervals, or continuously growing a third or even more aluminum-containing quantum well active layers by the same method, wherein the aluminum-free passive waveguide layer is arranged between the aluminum-containing quantum well active layers at intervals. In the butt joint growth method, the aluminum-containing quantum well material is carried out on the aluminum-free passive waveguide layer, so that the problem of oxidation of the aluminum-containing material is avoided, and the butt joint coupling growth quality is improved. Meanwhile, the active layer is made of high-performance aluminum-containing materials, so that the performance of the component can be improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an optical communication semiconductor laser according to an embodiment of the present invention;
fig. 2 is a schematic view of an epitaxial structure of an aluminum-free passive waveguide layer according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a first aluminum-containing quantum well active layer structure according to an embodiment of the present invention;
fig. 4 is a schematic view of a second aluminum-containing quantum well active layer structure according to an embodiment of the invention.
In the figure, 1 is a substrate, 2 is a buffer layer, 3 is an aluminum-free passive waveguide layer, 4 is a first aluminum-containing quantum well active layer, 5 is a second aluminum-containing quantum well active layer, 6 is an InP confinement layer, and 7 is an InGaAs contact layer.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
As shown in fig. 1 to 4, an embodiment of the present invention provides a method for butt-joint growth of an aluminum-containing quantum well active layer of an optical communication semiconductor laser, including the following steps:
s1) growing an N-type InP buffer layer 2 on the N-type InP substrate 1, and then sequentially growing an InGaAsP aluminum-free passive waveguide layer 3, an InP confinement layer, and an InGaAs contact layer on the N-type InP buffer layer to complete the first epitaxy, thereby obtaining a primary epitaxial wafer, which has the structure shown in fig. 2. The thickness of the N-type InP buffer layer in this embodiment is 100-500 nm. The wavelength of the InGaAsP aluminum-free passive waveguide layer is 1.05um-1.4um, and the thickness is 0.05 um-0.6 um. The thickness of the InP limiting layer is 0.01-0.5 um. The thickness of the InGaAs contact layer is 0.01-0.5 um.
S2) growing a SiO2 layer with the thickness of 0.05-0.3um by using a PECVD method, removing SiO2 in a first aluminum-containing quantum well active layer area preset on the primary epitaxial wafer by using a photoetching process, and removing an aluminum-free passive waveguide layer in the first aluminum-containing quantum well active layer area by using SiO2 as a mask;
carrying out second selective epitaxy, wherein a SiO2 layer is still covered outside the first aluminum-containing quantum well active layer area, carrying out selective epitaxy by using the SiO2 as a mask, growing a semiconductor epitaxial layer containing the first aluminum-containing quantum well active layer 4 only in the place where the aluminum-free passive waveguide layer is removed, and when the first aluminum-containing quantum well active layer and the aluminum-free passive waveguide layer are grown in a contact mode, because the first aluminum-containing quantum well active layer is grown on the aluminum-free InGaAsP aluminum-free passive waveguide layer, the problem of oxidation of aluminum-containing materials does not exist, in-situ corrosion before material growth is not needed, and the growth process is simplified;
one embodiment of a semiconductor epitaxial layer comprising a first aluminum-containing quantum well active layer 4 comprises an n-type InP buffer layer, an n-type AlInAs lower limiting layer, Al grown in this order from bottom to topxGayIn1-x-yAs lower waveguide layer, AlGaInAs/AlGaInAs strained multi-quantum well layer (emission wavelength of lambda 1), and AlxGayIn1-x-yThe total thickness of the As upper waveguide layer, the P-type AlInAs upper limiting layer, the P-type InP upper limiting layer and the P-type InGaAs contact layer is the same As the corrosion depth of the aluminum-free passive waveguide layer, and the epitaxial structure of the As upper waveguide layer, the P-type AlInAs upper limiting layer and the P-type InGaAs contact layer is shown in figure 3.
S3) removing the SiO2 layer, regrowing the SiO2 layer by using a PECVD method, wherein the thickness is 0.05-0.3um, removing the SiO2 in the preset second aluminum-containing quantum well active layer area by using a photoetching process, and removing the aluminum-free passive waveguide layer in the second aluminum-containing quantum well active layer area by using SiO2 as a mask;
carrying out third selective epitaxy, wherein the part outside the second aluminum-containing quantum well active layer area is covered with a SiO2 layer so that epitaxial materials cannot grow, only growing the semiconductor epitaxial layer containing the second aluminum-containing quantum well active layer 5 at the position where the aluminum-free passive waveguide layer is removed, and carrying out butt-joint growth on the second aluminum-containing quantum well active layer and the aluminum-free passive waveguide layer, because the semiconductor epitaxial layer grows on the aluminum-free passive waveguide layer, the problem of oxidation of aluminum-containing materials does not exist, and in-situ corrosion before material growth is not needed;
one embodiment of the semiconductor epitaxial layer comprising the second aluminum-containing quantum well active layer 5 comprises an n-type InP buffer layer, an n-type AlInAs lower limiting layer, Al grown in this order from bottom to topxGayIn1-x-yAs lower waveguide layer, AlGaInAs/AlGaInAsy strained multi-quantum well layer (with light-emitting wavelength of lambda 2, lambda 2 ≠ lambda 1), and AlxGayIn1-x-yThe total thickness of the As upper waveguide layer, the P-type AlInAs upper limiting layer, the P-type InP upper limiting layer and the P-type InGaAs contact layer is the same As the corrosion depth of the aluminum-free passive waveguide layer, As shown in FIG. 4.
S4) may be further continued to grow third and even more aluminum-containing quantum well active layers as needed by the method of step S3), wherein the aluminum-containing quantum well active layers are separated by aluminum-free InGaAsP aluminum-free passive waveguide layers. The light emission wavelength of each aluminum-containing quantum well active layer on the substrate is different. In the growth method, the epitaxial growth of the aluminum-containing quantum well active layer is carried out on the aluminum-free InGaAsP aluminum-free passive waveguide layer, so that the problem of oxidization of aluminum-containing materials is avoided, and the butt coupling growth quality is improved. Meanwhile, the active layer is made of high-performance aluminum-containing materials, so that the performance of the component can be improved.
S5) obtaining a final epitaxial wafer after the growth of the required aluminum-containing quantum well active layer is completed, removing the InGaAs contact layer on the epitaxial wafer according to the requirement, and then epitaxially growing the InP limiting layer 6 and the InGaAs contact layer 7 for the last time, thereby achieving the design requirement.
Example two
As shown in fig. 1 to 4, the present embodiment discloses an optical communication semiconductor laser, which includes a substrate, on which an aluminum-free passive waveguide layer and at least two aluminum-containing quantum well active layers are disposed side by side in the same horizontal plane, and the aluminum-containing quantum well active layers are butt-coupled to each other through the aluminum-free passive waveguide layer.
Furthermore, a buffer layer is arranged on the substrate, an aluminum-free passive waveguide layer and at least two aluminum-containing quantum well active layers are arranged on the buffer layer, an InP limiting layer and a contact layer are arranged on the aluminum-free passive waveguide layer and the at least two aluminum-containing quantum well active layers, and the contact layer is positioned above the InP limiting layer.
Further, the aluminum-containing quantum well active layer comprises an N-type AlInAs lower limiting layer, a lower waveguide layer, a strain multi-quantum well layer, an upper waveguide layer and a P-type AlInAs upper limiting layer which are sequentially arranged from bottom to top, and the total thickness of the aluminum-containing quantum well active layer is the same as that of the aluminum-free passive waveguide layer.
Further, the emission wavelength of each aluminum-containing quantum well active layer on the substrate is different.
The invention provides an optimized aluminum-containing quantum well active layer butt-joint growth method aiming at the problem of aluminum-containing active layer butt-joint growth. Meanwhile, the active layer is made of high-performance aluminum-containing materials, so that the performance of the component can be improved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. An aluminum-containing quantum well active layer butt-joint growth method of an optical communication semiconductor laser is characterized by comprising the following steps: the method comprises the following steps:
and (3) first epitaxy: growing a first semiconductor epitaxial layer containing an aluminum-free passive waveguide layer on a substrate to complete first epitaxy, and obtaining a first epitaxial wafer;
and (3) second epitaxy: removing an aluminum-free passive waveguide layer in a first aluminum-containing quantum well active layer region preset on the primary epitaxial wafer, performing secondary epitaxy, and growing a second semiconductor epitaxial layer containing the first aluminum-containing quantum well active layer to obtain a secondary epitaxial wafer;
and (3) third epitaxy: and continuously removing the aluminum-free passive waveguide layer in the second aluminum-containing quantum well active layer region preset on the secondary epitaxial wafer, performing third epitaxy, and growing a third semiconductor epitaxial layer containing the second aluminum-containing quantum well active layer to obtain a third epitaxial wafer, wherein the aluminum-free passive waveguide layer is arranged between the first aluminum-containing quantum well active layer and the second aluminum-containing quantum well active layer on the third epitaxial wafer at intervals.
2. The method of claim 1, wherein the method comprises butt-growing an aluminum-containing quantum well active layer of an optical communication semiconductor laser, wherein: growing a first semiconductor epitaxial layer containing an aluminum-free passive waveguide layer on a substrate to complete first epitaxy, specifically comprising: and growing an N-type buffer layer on the N-type substrate, and then sequentially growing an aluminum-free passive waveguide layer, an InP limiting layer and a contact layer on the N-type buffer layer to finish the first epitaxy.
3. The method of claim 1, wherein the method comprises butt-growing an aluminum-containing quantum well active layer of an optical communication semiconductor laser, wherein: removing an aluminum-free passive waveguide layer in a first aluminum-containing quantum well active layer area preset on the primary epitaxial wafer, performing secondary epitaxy, and growing a second semiconductor epitaxial layer containing the first aluminum-containing quantum well active layer, wherein the method specifically comprises the following steps:
growing a SiO2 layer on the upper surface of the primary epitaxial wafer, removing SiO2 in a first aluminum-containing quantum well active layer area preset on the primary epitaxial wafer by utilizing a photoetching process, removing an aluminum-free passive waveguide layer in the first aluminum-containing quantum well active layer area by utilizing SiO2 as a mask, covering a SiO2 layer outside the first aluminum-containing quantum well active layer area, carrying out selective epitaxy by utilizing the SiO2 as a mask, and growing a second semiconductor epitaxial layer containing the first aluminum-containing quantum well active layer only in the place where the aluminum-free passive waveguide layer is removed;
the second semiconductor epitaxial layer comprises an N-type buffer layer, a first aluminum-containing quantum well active layer, a P-type InP upper limiting layer and a contact layer which are sequentially grown from bottom to top, and the total thickness of the second semiconductor epitaxial layer is the same as the corrosion depth of the first aluminum-containing quantum well active layer region;
the first aluminum-containing quantum well active layer comprises an N-type lower limiting layer, a lower waveguide layer, a first strained multi-quantum well layer, an upper waveguide layer and a P-type upper limiting layer which are sequentially grown from bottom to top;
the total thickness of the first aluminum-containing quantum well active layer is the same as the thickness of the aluminum-free passive waveguide layer.
4. The method of claim 1, wherein the method comprises butt-growing an aluminum-containing quantum well active layer of an optical communication semiconductor laser, wherein: continuously removing the aluminum-free passive waveguide layer in the second aluminum-containing quantum well active layer area preset on the secondary epitaxial wafer, performing third epitaxy, growing a third semiconductor epitaxial layer containing the second aluminum-containing quantum well active layer, and obtaining a third epitaxial wafer, wherein the third epitaxial wafer specifically comprises the following steps:
removing the SiO2 layer on the upper surface of the secondary epitaxial wafer, regrowing a SiO2 layer, removing SiO2 in a preset second aluminum-containing quantum well active layer area on the secondary epitaxial wafer by utilizing a photoetching process, removing an aluminum-free passive waveguide layer in the second aluminum-containing quantum well active layer area by utilizing SiO2 as a mask, covering the SiO2 layer at the position outside the second aluminum-containing quantum well active layer area, carrying out selective epitaxy by utilizing the SiO2 as the mask, and growing a third semiconductor epitaxial layer containing the second aluminum-containing quantum well active layer only at the position where the aluminum-free passive waveguide layer is removed;
the third semiconductor epitaxial layer comprises an N-type buffer layer, a second aluminum-containing quantum well active layer, a P-type InP upper limiting layer and a contact layer which are sequentially grown from bottom to top, and the total thickness of the second semiconductor epitaxial layer is the same as the corrosion depth of the first aluminum-containing quantum well active layer region;
the second aluminum-containing quantum well active layer comprises an N-type lower limiting layer, a lower waveguide layer, a second strain multi-quantum well layer, an upper waveguide layer and a P-type upper limiting layer which are sequentially grown from bottom to top;
the total thickness of the second aluminum-containing quantum well active layer is the same as the thickness of the aluminum-free passive waveguide layer.
5. The method of claim 1, wherein the method comprises butt-growing an aluminum-containing quantum well active layer of an optical communication semiconductor laser, wherein: repeating the third epitaxial step, and continuously growing more semiconductor epitaxial layers containing aluminum-containing quantum well active layers on the third epitaxial wafer, wherein aluminum-free passive waveguide layers are arranged between the aluminum-containing quantum well active layers at intervals; the total thickness of each aluminum-containing quantum well active layer is the same as that of the aluminum-free passive waveguide layer.
6. The method for butt-joint growth of an aluminum-containing quantum well active layer of an optical communication semiconductor laser as claimed in claim 1 or 3 or 4 or 5, wherein: the light emission wavelength of each aluminum-containing quantum well active layer on the semiconductor substrate is different.
7. An optical communication semiconductor laser comprising a substrate, characterized in that: an aluminum-free passive waveguide layer and at least two aluminum-containing quantum well active layers are arranged side by side in the same horizontal plane on the substrate, and the aluminum-containing quantum well active layers are in butt joint coupling with each other through the aluminum-free passive waveguide layer.
8. An optical communication semiconductor laser as claimed in claim 7 wherein: the substrate is provided with a buffer layer, the buffer layer is provided with an aluminum-free passive waveguide layer and at least two aluminum-containing quantum well active layers, the aluminum-free passive waveguide layer and the at least two aluminum-containing quantum well active layers are provided with an InP limiting layer and a contact layer, and the contact layer is positioned above the InP limiting layer.
9. An optical communication semiconductor laser as claimed in claim 7 wherein: the aluminum-containing quantum well active layer comprises an N-type lower limiting layer, a lower waveguide layer, a strain multi-quantum well layer, an upper waveguide layer and a P-type upper limiting layer which are sequentially arranged from bottom to top, and the total thickness of the aluminum-containing quantum well active layer is the same as that of the aluminum-free passive waveguide layer.
10. An optical communication semiconductor laser as claimed in claim 7 wherein: the light emission wavelength of each aluminum-containing quantum well active layer on the substrate is different.
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| CN117613663A (en) * | 2024-01-19 | 2024-02-27 | 武汉云岭光电股份有限公司 | Laser and manufacturing method thereof |
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| CN1464603A (en) * | 2002-06-21 | 2003-12-31 | 中国科学院半导体研究所 | Multi-quantum well waveguide butt coupling method |
| JP2010232372A (en) * | 2009-03-26 | 2010-10-14 | Furukawa Electric Co Ltd:The | Method of manufacturing integrated semiconductor optical element, and integrated semiconductor optical element |
| CN105164874A (en) * | 2012-11-30 | 2015-12-16 | 统雷量子电子有限公司 | Multi-wavelength quantum cascade laser by growing different active and passive core layers |
| CN107666110A (en) * | 2016-07-28 | 2018-02-06 | 三菱电机株式会社 | Optical semiconductor device |
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| CN1464603A (en) * | 2002-06-21 | 2003-12-31 | 中国科学院半导体研究所 | Multi-quantum well waveguide butt coupling method |
| JP2010232372A (en) * | 2009-03-26 | 2010-10-14 | Furukawa Electric Co Ltd:The | Method of manufacturing integrated semiconductor optical element, and integrated semiconductor optical element |
| CN105164874A (en) * | 2012-11-30 | 2015-12-16 | 统雷量子电子有限公司 | Multi-wavelength quantum cascade laser by growing different active and passive core layers |
| CN107666110A (en) * | 2016-07-28 | 2018-02-06 | 三菱电机株式会社 | Optical semiconductor device |
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| CN117613663A (en) * | 2024-01-19 | 2024-02-27 | 武汉云岭光电股份有限公司 | Laser and manufacturing method thereof |
| CN117613663B (en) * | 2024-01-19 | 2024-05-10 | 武汉云岭光电股份有限公司 | Laser and manufacturing method thereof |
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Application publication date: 20210112 |