CN112201408B - Preparation method of flexible transparent conductive film - Google Patents
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Abstract
本发明属于柔性电子材料技术领域,公开了一种柔性透明导电薄膜的制备方法,包括:在刚性基底上,进行次序可变的涂布金属纳米线薄膜步骤和覆盖掩模步骤;使对应于掩模镂空区域的金属纳米线薄膜结合氧化石墨烯层,和/或使对应于掩模覆盖区域的金属纳米线薄膜结合氧化石墨烯层;使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜,并从刚性基底或掩模上剥离,得到具有掩模镂空区域图案的柔性透明导电薄膜和/或具有掩模覆盖区域图案的柔性透明导电薄膜。本发明的方法可选择性地将银纳米线薄膜图案由刚性基底向柔性基底无损转移,从而实现柔性透明导电薄膜的制备,且制备得到的柔性透明导电薄膜具有良好的图案精度和光电性能。
The invention belongs to the technical field of flexible electronic materials, and discloses a preparation method of a flexible transparent conductive film. The metal nanowire film in the hollow area is combined with the graphene oxide layer, and/or the metal nanowire film corresponding to the mask covered area is combined with the graphene oxide layer; using a surface-adhesive flexible substrate, adhered and bonded with graphite oxide The metal nanowire film of the alkene layer is peeled off from the rigid substrate or the mask to obtain a flexible transparent conductive film with a mask hollow area pattern and/or a flexible transparent conductive film with a mask covering area pattern. The method of the invention can selectively transfer the silver nanowire film pattern from the rigid substrate to the flexible substrate without damage, thereby realizing the preparation of the flexible transparent conductive film, and the prepared flexible transparent conductive film has good pattern accuracy and optoelectronic properties.
Description
技术领域technical field
本发明属于柔性电子材料技术领域,特别涉及一种柔性透明导电薄膜的制备方法。The invention belongs to the technical field of flexible electronic materials, and particularly relates to a preparation method of a flexible transparent conductive film.
背景技术Background technique
透明导电薄膜图案是电子器件的重要组成部分,在触控显示、有机电致发光、有机太阳能电池、电磁屏蔽等领域应用广泛。目前使用最为普遍的透明导电材料是氧化铟锡(ITO),但是ITO通过气相溅射工艺制备,原料浪费严重,加之铟原料稀缺,造成高导电ITO成本高昂。此外,ITO的高温退火工序限制了很多透明聚合物基底的使用,加之ITO的耐弯折性能很差,导致ITO无法满足柔性电子的需求。作为ITO的柔性替代材料,在柔性透明基底上形成银纳米线薄膜图案的柔性透明导电薄膜,具有优良的透光性、导电性和耐弯折性,在柔性电子中具有广阔前景。Transparent conductive film patterns are an important part of electronic devices and are widely used in touch display, organic electroluminescence, organic solar cells, electromagnetic shielding and other fields. At present, the most commonly used transparent conductive material is indium tin oxide (ITO). However, ITO is prepared by gas-phase sputtering process, and the raw material is wasted seriously. In addition, the indium raw material is scarce, resulting in high cost of highly conductive ITO. In addition, the high-temperature annealing process of ITO limits the use of many transparent polymer substrates, and the bending resistance of ITO is poor, which makes ITO unable to meet the needs of flexible electronics. As a flexible alternative to ITO, a flexible transparent conductive film with silver nanowire thin film patterns formed on a flexible transparent substrate has excellent light transmittance, conductivity and bending resistance, and has broad prospects in flexible electronics.
然而,柔性透明基底上银纳米线薄膜图案的制备仍然面临许多问题。采用光刻、等离子体刻蚀等方法制备银纳米线薄膜图案,存在工艺和设备复杂、化学材料消耗和污染严重、成本高昂等缺点。采用喷墨、丝网印刷、凹版印刷等方法制备银纳米线薄膜图案则存在油墨合成与设备复杂、图案精度和规模生产受限、薄膜需要后续处理等缺点。更关键的是,对柔性基底而言,上述方法受到诸多限制,例如刻蚀方法、高温处理可能对柔性基底造成损伤,银纳米线油墨在很多柔性基底上成膜性差等。部分柔性透明基底(如PDMS)由于疏水性难以在其上直接沉积银纳米线薄膜,需要较长时间的等离子体亲水处理后才能进行银纳米线薄膜的沉积,由此造成工艺、设备复杂和能源浪费;而基于基底亲疏水处理制备薄膜图案的方法也存在同样缺点。However, the fabrication of silver nanowire thin film patterns on flexible transparent substrates still faces many problems. Using photolithography, plasma etching and other methods to prepare silver nanowire thin film patterns has disadvantages such as complicated process and equipment, serious consumption and pollution of chemical materials, and high cost. Using inkjet, screen printing, gravure printing and other methods to prepare silver nanowire thin film patterns has disadvantages such as complex ink synthesis and equipment, limited pattern accuracy and scale production, and films require subsequent processing. More importantly, for flexible substrates, the above methods are subject to many limitations, such as etching methods, high temperature treatment may cause damage to flexible substrates, and silver nanowire inks have poor film-forming properties on many flexible substrates. Due to the hydrophobicity of some flexible transparent substrates (such as PDMS), it is difficult to directly deposit silver nanowire films on them, and a long time plasma hydrophilic treatment is required before the deposition of silver nanowire films. Energy waste; and the method of fabricating thin film patterns based on the hydrophilic and hydrophobic treatment of the substrate also has the same disadvantage.
在刚性基底上制备银纳米线薄膜之后,将图案化的银纳米线薄膜向柔性基底转移,是制备柔性透明导电薄膜的可选方法之一。但是,一方面,如何实现银纳米线薄膜图案从刚性基底向柔性基底的无损转移是技术难点。以旋涂、喷涂、刮涂等方法在玻璃基底上直接沉积的银纳米线薄膜,银纳米线与玻璃基底存在粘附性,虽然经3M胶带粘附力测试后导电性能骤减,但仍有相当部分存留在玻璃基底上,且3M胶带粘撕转移部分不能形成导电网络。即使将柔性聚合物前体涂布在薄膜表面,固化后剥离,仍有相当部分银纳米线不能转移至柔性基底,剥离过程的应力亦会造成网络损伤,导致柔性基底上的银纳米线网络不导电或者弱导电。现有技术中,通常采用真空抽滤法制备银纳米线薄膜,银纳米线薄膜由滤膜转移至玻璃基底后粘附较弱,柔性基底材料涂覆在薄膜表面,固化后剥离,银纳米线可完整转移至柔性基底。但该过程涉及的真空抽滤法在实际生产中工艺繁琐,难以规模化应用。另一方面,如何实现薄膜特定图案的选择性转移,目前尚无理想的方法。无论是先在刚性基底制备图案,然后转移至柔性基底,还是采用凹版印刷等方法向柔性基底印刷油墨,所采用的传统图案技术都存在技术、设备和材料上的难题。After preparing the silver nanowire thin film on the rigid substrate, transferring the patterned silver nanowire thin film to the flexible substrate is one of the optional methods for preparing the flexible transparent conductive thin film. However, on the one hand, how to achieve the non-destructive transfer of silver nanowire thin film patterns from rigid substrates to flexible substrates is a technical difficulty. The silver nanowire film deposited directly on the glass substrate by spin coating, spray coating, blade coating, etc., the silver nanowire has adhesion to the glass substrate. A considerable part remained on the glass substrate, and the 3M adhesive tape transfer part could not form a conductive network. Even if the flexible polymer precursor is coated on the surface of the film and peeled off after curing, a considerable part of the silver nanowires cannot be transferred to the flexible substrate, and the stress during the peeling process will also cause network damage, resulting in the network of silver nanowires on the flexible substrate. Conductive or weakly conductive. In the prior art, the silver nanowire film is usually prepared by vacuum filtration. The silver nanowire film is transferred from the filter film to the glass substrate and has weak adhesion. The flexible base material is coated on the surface of the film and peeled off after curing. Complete transfer to flexible substrates is possible. However, the vacuum filtration method involved in this process is cumbersome in actual production and difficult to apply on a large scale. On the other hand, how to achieve the selective transfer of specific patterns in thin films, there is currently no ideal method. Whether the pattern is first prepared on a rigid substrate and then transferred to a flexible substrate, or the ink is printed on a flexible substrate by methods such as gravure printing, the traditional patterning techniques used have technical, equipment and material challenges.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于针对上述现有技术的不足,提供一种柔性透明导电薄膜的制备方法,该方法可选择性地将银纳米线薄膜图案由刚性基底向柔性基底无损转移,从而实现柔性透明导电薄膜的制备。The purpose of the present invention is to provide a preparation method of a flexible transparent conductive film in view of the above-mentioned deficiencies of the prior art, which can selectively transfer the silver nanowire film pattern from a rigid substrate to a flexible substrate without loss, thereby realizing flexible transparent conductive film. Preparation of thin films.
为解决上述技术问题,本发明的实施方式提供了一种柔性透明导电薄膜的制备方法,其包括如下步骤:在刚性基底上,进行次序可变的涂布金属纳米线薄膜步骤和覆盖掩模步骤,所述掩模具有镂空区域和覆盖区域;使对应于所述掩模镂空区域的金属纳米线薄膜结合氧化石墨烯层,和/或使对应于所述掩模覆盖区域的金属纳米线薄膜结合氧化石墨烯层;使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜,并从刚性基底或掩模上剥离,得到具有掩模镂空区域图案的柔性透明导电薄膜和/或具有掩模覆盖区域图案的柔性透明导电薄膜。In order to solve the above-mentioned technical problems, an embodiment of the present invention provides a method for preparing a flexible transparent conductive film, which includes the following steps: on a rigid substrate, a step of coating a metal nanowire film in a variable order and a step of covering a mask are performed. , the mask has a hollow area and a covering area; the metal nanowire film corresponding to the mask hollow area is combined with the graphene oxide layer, and/or the metal nanowire film corresponding to the mask covered area is combined Graphene oxide layer; using a surface-adherable flexible substrate, a metal nanowire film incorporating a graphene oxide layer is adhered, and peeled off from the rigid substrate or mask to obtain a flexible transparent conductive film with a pattern of mask hollow areas and/or a flexible transparent conductive film with a pattern of mask coverage areas.
相对于现有技术,本发明的实施方式提供了一种依靠氧化石墨烯层的双面粘附性进行银纳米线转移的柔性薄膜制备方法。基于此,本发明首先提出了两种技术思路:其一,先在刚性基底上制备连续的银纳米线薄膜,然后选择性地将特定图案化的银纳米线薄膜转移到柔性基底上;其二,直接在刚性基底上制备图案化的银纳米线薄膜,然后将该图案化的银纳米线薄膜转移到柔性基底上。对应于上述两种技术思路,本发明提供了两种可选的制备流程:Compared with the prior art, the embodiments of the present invention provide a method for preparing a flexible thin film that relies on the double-sided adhesion of a graphene oxide layer to transfer silver nanowires. Based on this, the present invention first proposes two technical ideas: first, to prepare a continuous silver nanowire film on a rigid substrate, and then selectively transfer a specific patterned silver nanowire film to a flexible substrate; second , fabricating patterned silver nanowire films directly on rigid substrates, and then transferring the patterned silver nanowire films onto flexible substrates. Corresponding to the above two technical ideas, the present invention provides two optional preparation processes:
一、可选的第一种制备流程包括如下步骤:S1:在刚性基底上涂布金属纳米线薄膜;S2:在金属纳米线薄膜上覆盖掩模;S3:选择性地使掩模镂空区域或掩模覆盖区域的金属纳米线薄膜结合氧化石墨烯层;S4:使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜并从刚性基底上剥离,得到具有掩模镂空区域图案的柔性透明导电薄膜和/或具有掩模覆盖区域图案的柔性透明导电薄膜。1. The optional first preparation process includes the following steps: S1: coating a metal nanowire film on a rigid substrate; S2: covering a mask on the metal nanowire film; S3: selectively making the mask hollow area or The metal nanowire film in the area covered by the mask is combined with the graphene oxide layer; S4: Using a surface-adherable flexible substrate, the metal nanowire film combined with the graphene oxide layer is adhered and peeled off from the rigid substrate to obtain a mask with a mask A flexible transparent conductive film with a pattern of hollow areas and/or a flexible transparent conductive film with a pattern of mask coverage areas.
其中,对于步骤S3中选择性地使掩模镂空区域或掩模覆盖区域的金属纳米线薄膜结合氧化石墨烯层的步骤,本申请提供了两种更为具体的方案。Wherein, for the step of selectively combining the metal nanowire film in the mask hollow area or the mask covering area with the graphene oxide layer in step S3, the present application provides two more specific solutions.
作为第一种方案,为了选择性地使掩模镂空区域的金属纳米线薄膜结合氧化石墨烯层,进行如下步骤:S311:将氧化石墨烯分散液涂膜于覆盖有掩模的金属纳米线薄膜表面,使掩模镂空区域的金属纳米线薄膜结合氧化石墨烯层;S312:移除掩模。As the first solution, in order to selectively combine the metal nanowire film in the hollow area of the mask with the graphene oxide layer, the following steps are performed: S311 : coating the graphene oxide dispersion liquid on the metal nanowire film covered with the mask surface, so that the metal nanowire film in the hollow area of the mask is combined with the graphene oxide layer; S312 : remove the mask.
作为第二种方案,为了选择性地使掩模覆盖区域的金属纳米线薄膜结合氧化石墨烯层,进行如下步骤:S321:对覆盖有掩模的金属纳米线薄膜进行紫外臭氧处理或等离子体清洗处理,使掩模镂空区域的金属纳米线薄膜失去与氧化石墨烯的粘附力;S322:移除掩模;S323:将氧化石墨烯分散液涂膜于银纳米线薄膜表面,使掩模覆盖区域的金属纳米线薄膜结合氧化石墨烯层。As the second solution, in order to selectively combine the metal nanowire thin film in the area covered by the mask with the graphene oxide layer, the following steps are performed: S321 : UV-ozone treatment or plasma cleaning is performed on the metal nanowire thin film covered with the mask Treatment, so that the metal nanowire film in the hollow area of the mask loses its adhesion with graphene oxide; S322: remove the mask; S323: apply the graphene oxide dispersion on the surface of the silver nanowire film to cover the mask Areas of metal nanowire films combined with graphene oxide layers.
如下是对第一、第二种方案的具体阐述:The following is a detailed description of the first and second options:
第一种方案为:在刚性基底上制备金属纳米线薄膜后,在金属纳米线薄膜的表面覆盖掩模,将氧化石墨烯分散液涂膜于覆盖有掩模的金属纳米线薄膜表面,使掩模镂空区域的金属纳米线薄膜结合氧化石墨烯层,移除掩模后,使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜并从刚性基底上剥离,借助氧化石墨烯层与金属纳米线和柔性基底的双面粘附作用,将掩模镂空区域的金属纳米线从刚性基底转移至柔性基底,获得与掩模镂空区域图案一致的金属纳米线柔性透明导电薄膜,同时,掩模覆盖区域的金属纳米线图案仍遗留于刚性基底上。The first solution is: after preparing the metal nanowire film on a rigid substrate, cover the surface of the metal nanowire film with a mask, and coat the graphene oxide dispersion on the surface of the metal nanowire film covered with the mask, so that the mask The metal nanowire film in the hollow area of the mold is combined with the graphene oxide layer. After removing the mask, a flexible substrate with an adhesive surface is used to adhere the metal nanowire film combined with the graphene oxide layer and peel off from the rigid substrate. The double-sided adhesion of the graphene oxide layer to the metal nanowires and the flexible substrate transfers the metal nanowires in the hollow area of the mask from the rigid substrate to the flexible substrate to obtain flexible, transparent and conductive metal nanowires consistent with the pattern of the hollow area of the mask. The thin film, meanwhile, the metal nanowire pattern in the area covered by the mask remains on the rigid substrate.
可见,第一种方案利用了氧化石墨烯层与金属纳米线之间的粘附作用、粘结性柔性基底与氧化石墨烯层之间的粘附作用,借助氧化石墨烯将掩模镂空区域的金属纳米线薄膜图案从刚性基底选择性地转移至柔性基底,从而制得具有掩模镂空区域图案的柔性透明导电薄膜。It can be seen that the first scheme utilizes the adhesion between the graphene oxide layer and the metal nanowires, the adhesion between the cohesive flexible substrate and the graphene oxide layer, and uses graphene oxide to make the mask hollow area The metal nanowire film pattern is selectively transferred from the rigid substrate to the flexible substrate, thereby producing a flexible transparent conductive film with a pattern of masked hollow regions.
第二种方案为:在刚性基底上制备金属纳米线薄膜后,在金属纳米线薄膜的表面覆盖掩模,对覆盖有掩模的金属纳米线薄膜进行紫外臭氧处理或等离子体清洗处理;掩模镂空区域的金属纳米线经紫外臭氧处理或等离子体清洗处理后,表面结构发生变化,与氧化石墨烯粘附很弱,无法再与表面的氧化石墨烯层结合,同时刚性基底与氧化石墨烯的粘附性能增强,削弱表面氧化石墨烯的可转移性;而掩模覆盖区域的金属纳米线则维持原表面结构特征,可与氧化石墨烯层紧密结合。移除掩模后,将氧化石墨烯分散液涂膜于银纳米线薄膜表面,使掩模覆盖区域的金属纳米线薄膜与氧化石墨烯层结合,然后使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜并从刚性基底上剥离,借助氧化石墨烯层与金属纳米线和柔性基底的双面粘附作用,将掩模覆盖区域(即未经紫外臭氧处理或等离子体清洗)的银纳米线从刚性基底转移至柔性基底,获得与掩模覆盖区域图案一致的金属纳米线柔性透明导电薄膜。The second scheme is: after the metal nanowire film is prepared on the rigid substrate, a mask is covered on the surface of the metal nanowire film, and the metal nanowire film covered with the mask is subjected to ultraviolet ozone treatment or plasma cleaning treatment; After the metal nanowires in the hollow area are treated with ultraviolet ozone or plasma cleaning, the surface structure changes, and the adhesion to graphene oxide is very weak, and can no longer be combined with the graphene oxide layer on the surface. The adhesion performance is enhanced and the transferability of the surface graphene oxide is weakened; while the metal nanowires in the area covered by the mask maintain the original surface structural characteristics and can be closely combined with the graphene oxide layer. After removing the mask, coat the graphene oxide dispersion on the surface of the silver nanowire film, so that the metal nanowire film in the area covered by the mask is combined with the graphene oxide layer, and then use a surface-adhesive flexible substrate to adhere The metal nanowire film combined with the graphene oxide layer is peeled off from the rigid substrate, and the mask covering area (that is, without UV ozone treatment or Plasma-cleaned) silver nanowires were transferred from a rigid substrate to a flexible substrate to obtain a flexible transparent conductive film of metal nanowires consistent with the pattern of the mask coverage area.
可见,第二种方案通过紫外臭氧处理或等离子体清洗处理改变了金属纳米线薄膜和刚性基底局部的表面特性,并利用了氧化石墨烯对不同表面特征的金属纳米线的选择性粘附作用、粘结性柔性基底与氧化石墨烯层之间的粘附作用,将掩模覆盖区域的金属纳米线薄膜图案从刚性基底选择性地转移至柔性基底,从而制得具有掩模覆盖区域图案的柔性透明导电薄膜。It can be seen that the second scheme changes the local surface properties of the metal nanowire film and the rigid substrate through ultraviolet ozone treatment or plasma cleaning treatment, and utilizes the selective adhesion of graphene oxide to metal nanowires with different surface characteristics, Adhesion between the adhesive flexible substrate and the graphene oxide layer to selectively transfer the metal nanowire thin film pattern in the masked area from the rigid substrate to the flexible substrate, resulting in a flexible masked area patterned Transparent conductive film.
进一步地,对于第一种方案,在使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜并从刚性基底上剥离,得到具有掩模镂空区域图案的柔性透明导电薄膜之后,还包括:S5:将氧化石墨烯分散液涂膜于遗留在刚性基底上的金属纳米线薄膜表面;S6:使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜并从刚性基底上剥离,得到具有掩模覆盖区域图案的柔性透明导电薄膜。也就是说,对于仍遗留于刚性基底上的掩模覆盖区域的金属纳米线图案,再次利用氧化石墨烯层与金属纳米线之间的粘附作用、粘结性柔性基底与氧化石墨烯层之间的粘附作用,借助氧化石墨烯将该部分金属纳米线图案转移至柔性基底,从而可获得与掩模覆盖区域图案一致的金属纳米线柔性透明导电薄膜。通过两次转移,制备得到了两种金属纳米线柔性薄膜图案,分别对应掩模镂空区域图案和掩模覆盖区域图案,刚性基底上的金属纳米线薄膜被完全利用。Further, for the first scheme, using a surface-adhesive flexible substrate, a metal nanowire film combined with a graphene oxide layer is adhered and peeled off from the rigid substrate to obtain a flexible transparent conductive pattern with a mask hollow area pattern. After the film, it also includes: S5: coating the graphene oxide dispersion on the surface of the metal nanowire film left on the rigid substrate; S6: using a surface-adhesive flexible substrate to adhere the metal with the graphene oxide layer The nanowire film is peeled off from the rigid substrate to obtain a flexible transparent conductive film with a pattern of mask coverage areas. That is to say, for the metal nanowire pattern in the mask-covered area still left on the rigid substrate, the adhesion between the graphene oxide layer and the metal nanowire, the bond between the flexible substrate and the graphene oxide layer are again utilized. With the help of graphene oxide, the part of the metal nanowire pattern is transferred to the flexible substrate, so that a flexible transparent conductive film of metal nanowires consistent with the pattern of the mask coverage area can be obtained. Through two transfers, two metal nanowire flexible film patterns were prepared, corresponding to the mask hollow area pattern and the mask covering area pattern, respectively, and the metal nanowire film on the rigid substrate was fully utilized.
二、可选的第二种制备流程包括如下步骤:SS1:在刚性基底上覆盖掩模;SS2:在覆盖有掩模的刚性基底表面涂布金属纳米线薄膜;使所述金属纳米线薄膜分别沉积在掩模覆盖区域的掩模表面和掩模镂空区域的刚性基底表面;SS3:在金属纳米线薄膜表面涂布氧化石墨烯分散液,使所述沉积在掩模覆盖区域的掩模表面和掩模镂空区域的刚性基底表面的金属纳米线薄膜分别结合氧化石墨烯层;SS4:将掩模与刚性基底分离;SS5:使用表面可粘附的柔性基底,粘附刚性基底上结合有氧化石墨烯层的金属纳米线薄膜,并从刚性基底上剥离,得到具有掩模镂空区域图案的柔性透明导电薄膜;SS6:使用表面可粘附的柔性基底,粘附掩模表面结合有氧化石墨烯层的金属纳米线薄膜,并从掩模表面剥离,得到具有掩模覆盖区域图案的柔性透明导电薄膜。2. The optional second preparation process includes the following steps: SS1: cover the rigid substrate with a mask; SS2: coat the surface of the rigid substrate covered with the mask with a metal nanowire film; make the metal nanowire film separately Deposited on the mask surface of the mask covered area and the rigid substrate surface of the mask hollow area; SS3: Coat the graphene oxide dispersion on the surface of the metal nanowire film, so that the deposited on the mask surface of the mask covered area and The metal nanowire films on the surface of the rigid substrate in the hollow area of the mask are respectively combined with graphene oxide layers; SS4: separate the mask from the rigid substrate; SS5: use a surface-adhesive flexible substrate, which is bonded to the rigid substrate with graphite oxide The metal nanowire film of the graphene layer is peeled off from the rigid substrate to obtain a flexible transparent conductive film with a mask hollow area pattern; SS6: Use a surface-adhesive flexible substrate, and the surface of the adhesive mask is combined with a graphene oxide layer The metal nanowire film is peeled off from the mask surface to obtain a flexible transparent conductive film with a mask covering area pattern.
在第二种制备流程中,首先在刚性基底和掩模表面分别制备银纳米线薄膜的图案结构,然后利用氧化石墨烯层与金属纳米线之间的粘附作用、表面可粘附性柔性基底与氧化石墨烯层之间的粘附作用,借助氧化石墨烯将刚性基底或掩模上的金属纳米线薄膜图案无损地转移至柔性基底,从而制得具有掩模镂空区域图案的柔性透明导电薄膜、以及具有掩模覆盖区域图案的柔性透明导电薄膜。In the second preparation process, the pattern structure of the silver nanowire thin film was first prepared on the rigid substrate and the mask surface respectively, and then the adhesion between the graphene oxide layer and the metal nanowires was used, and the surface can be adhered to the flexible substrate. The adhesion between the graphene oxide layer and the metal nanowire film pattern on the rigid substrate or mask is non-destructively transferred to the flexible substrate with the help of graphene oxide, so as to prepare a flexible transparent conductive film with a pattern of mask hollow areas , and a flexible transparent conductive film with a pattern of mask coverage areas.
优选地,本申请提供的柔性透明导电薄膜的制备方法中,所述刚性基底选自玻璃或硅片。在上述刚性基底上涂布金属纳米线薄膜可采用将金属纳米线分散液通过棒涂、旋涂、喷涂、刮涂等方法涂布在刚性基底上的方式实现,其中,金属纳米线分散液可以是金属纳米线分散在水、乙醇、异丙醇等溶剂中形成。Preferably, in the preparation method of the flexible transparent conductive film provided by the present application, the rigid substrate is selected from glass or silicon wafer. Coating the metal nanowire film on the above rigid substrate can be realized by coating the metal nanowire dispersion on the rigid substrate by rod coating, spin coating, spray coating, blade coating, etc., wherein the metal nanowire dispersion can be It is formed by dispersing metal nanowires in solvents such as water, ethanol, and isopropanol.
优选地,本申请提供的柔性透明导电薄膜的制备方法中,所述金属纳米线薄膜为银纳米线薄膜;优选地,所述银纳米线的直径为20~100nm,长度为10~100μm。Preferably, in the preparation method of the flexible transparent conductive film provided by the present application, the metal nanowire film is a silver nanowire film; preferably, the silver nanowire has a diameter of 20-100 nm and a length of 10-100 μm.
优选地,本申请提供的柔性透明导电薄膜的制备方法中,所述图案掩模的图案结构或镂空结构应与所要制备的柔性透明导电薄膜的目标图案一致,掩模应与玻璃、硅片等刚性基底具有良好的贴合性能。Preferably, in the preparation method of the flexible transparent conductive film provided by the present application, the pattern structure or hollow structure of the pattern mask should be consistent with the target pattern of the flexible transparent conductive film to be prepared, and the mask should be consistent with glass, silicon wafer, etc. Rigid substrates have good conformability.
优选地,本申请提供的柔性透明导电薄膜的制备方法中,所述氧化石墨烯分散液的浓度为0.5~5mg/ml。Preferably, in the preparation method of the flexible transparent conductive film provided by the present application, the concentration of the graphene oxide dispersion liquid is 0.5-5 mg/ml.
优选地,本申请提供的柔性透明导电薄膜的制备方法中,所述氧化石墨烯分散液通过滴涂、浸涂、喷涂或旋涂的方式涂膜于金属纳米线薄膜表面。Preferably, in the preparation method of the flexible transparent conductive film provided by the present application, the graphene oxide dispersion is coated on the surface of the metal nanowire film by drop coating, dip coating, spray coating or spin coating.
优选地,本申请提供的柔性透明导电薄膜的制备方法中,所述表面可粘附的柔性基底为表面涂覆有胶水的柔性基底或透明胶带。其中,所述胶水可选自各类商用透明胶水和粘结剂,所述透明胶带可选自各类粘性较弱的商用透明胶带。在使用表面涂覆有胶水的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜并从刚性基底上剥离的步骤中,应在柔性基底上的胶水干燥或固化前完成剥离。Preferably, in the preparation method of the flexible transparent conductive film provided by the present application, the surface-adherable flexible substrate is a flexible substrate or a transparent tape coated with glue on the surface. Wherein, the glue can be selected from various commercial transparent glues and adhesives, and the transparent adhesive tape can be selected from various commercial transparent adhesive tapes with weaker viscosity. In the steps of adhering the graphene oxide layer-incorporated metal nanowire film and peeling off the rigid substrate using a flexible substrate coated with glue, the peeling should be done before the glue on the flexible substrate dries or cures.
优选地,本申请提供的柔性透明导电薄膜的制备方法中,所述柔性基底优选自聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚乙烯(PE)、聚酰亚胺(PI)、聚二甲基硅氧烷(PDMS)、聚乙烯醇(PVA)、聚氨基甲酸酯(PU)或聚甲基丙烯酸甲酯(PMMA)等。Preferably, in the preparation method of the flexible transparent conductive film provided by the present application, the flexible substrate is preferably selected from polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethylene ( PE), polyimide (PI), polydimethylsiloxane (PDMS), polyvinyl alcohol (PVA), polyurethane (PU) or polymethyl methacrylate (PMMA), etc.
另外,本申请提供的柔性透明导电薄膜的制备方法中,所述紫外臭氧处理或等离子体清洗处理的时间根据仪器功率调整,例如功率100W,时间1~2min即可达到改变掩模镂空区域的金属纳米线薄膜表面特性、并使其无法与氧化石墨烯紧密结合的效果。In addition, in the preparation method of the flexible transparent conductive film provided by the present application, the time of the ultraviolet ozone treatment or the plasma cleaning treatment is adjusted according to the power of the instrument, for example, the power is 100W, and the time is 1 to 2 minutes to change the metal in the hollow area of the mask. The surface properties of the nanowire film and its inability to bind tightly to graphene oxide.
与传统的柔性金属纳米线薄膜制备方法相比,本发明所提供的柔性透明导电薄膜的制备方法还具有如下特点:工艺过程简单环保,无高温、高压、真空过滤等复杂工艺,无需昂贵设备和大量材料消耗,能够实现金属纳米线薄膜图案从刚性基底向各类柔性基底,包括疏水性基底的完整转移,制备得到的柔性透明导电薄膜具有良好的图案精度和光电性能。Compared with the traditional preparation method of the flexible metal nanowire film, the preparation method of the flexible transparent conductive film provided by the present invention also has the following characteristics: the process is simple and environmentally friendly, no complicated processes such as high temperature, high pressure and vacuum filtration are required, and no expensive equipment and A large amount of material consumption can realize the complete transfer of metal nanowire film patterns from rigid substrates to various flexible substrates, including hydrophobic substrates. The prepared flexible transparent conductive films have good pattern accuracy and optoelectronic properties.
附图说明Description of drawings
图1为本发明第一实施方式的柔性透明导电薄膜的制备流程图;1 is a flow chart of the preparation of the flexible transparent conductive film according to the first embodiment of the present invention;
图2为本发明实施例1中的银纳米线-氧化石墨烯-PE柔性薄膜栅极图案的光学显微镜放大图像;2 is an optical microscope magnified image of a silver nanowire-graphene oxide-PE flexible film grid pattern in Example 1 of the present invention;
图3为本发明第二实施方式的柔性透明导电薄膜的制备流程图;3 is a flow chart of the preparation of the flexible transparent conductive film according to the second embodiment of the present invention;
图4为本发明实施例2中的银纳米线-氧化石墨烯-PDMS柔性薄膜栅极图案的光学显微镜放大图像;4 is an optical microscope magnified image of the silver nanowire-graphene oxide-PDMS flexible film grid pattern in Example 2 of the present invention;
图5为本发明第三实施方式的柔性透明导电薄膜的制备流程图;5 is a flow chart of the preparation of the flexible transparent conductive film according to the third embodiment of the present invention;
图6为本发明实施例3中的银纳米线-氧化石墨烯-PE柔性薄膜栅极图案的光学显微镜放大图像;6 is an optical microscope magnified image of the silver nanowire-graphene oxide-PE flexible film grid pattern in Example 3 of the present invention;
图7为本发明第四实施方式的柔性透明导电薄膜的制备流程图。FIG. 7 is a flow chart of the preparation of the flexible transparent conductive film according to the fourth embodiment of the present invention.
具体实施方式Detailed ways
为了能够更清楚理解本发明的目的、特点和优势,下面结合附图对本发明的实施方式进行详细描述。所用材料未注明生产厂商者,均为可以通过市售购买获得的常规产品。对示例性实施方式的描述仅仅是出于示范目的,而非对本发明及其应用的限制。In order to understand the objects, features and advantages of the present invention more clearly, the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The materials used without specifying the manufacturer are conventional products that can be purchased from the market. The description of the exemplary embodiments is for illustrative purposes only, and not for the purpose of limiting the invention and its applications.
本申请的第一实施方式涉及的柔性透明导电薄膜的制备方法,其流程图如图1所示,具体包括如下步骤:S1:在刚性基底上涂布金属纳米线薄膜;S2:在金属纳米线薄膜上覆盖掩模;S311:将氧化石墨烯分散液涂膜于覆盖有掩模的金属纳米线薄膜表面,使掩模镂空区域的金属纳米线薄膜结合氧化石墨烯层;S312:移除掩模;S411:使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜并从刚性基底上剥离,得到具有掩模镂空区域图案的柔性透明导电薄膜;S5:将氧化石墨烯分散液涂膜于遗留在刚性基底上的金属纳米线薄膜表面;S6:使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜并从刚性基底上剥离,得到具有掩模覆盖区域图案的柔性透明导电薄膜。The flow chart of the method for preparing a flexible transparent conductive film according to the first embodiment of the present application is shown in FIG. 1 , and specifically includes the following steps: S1: coating a metal nanowire film on a rigid substrate; S2: coating the metal nanowires Cover the film with a mask; S311: Coat the graphene oxide dispersion on the surface of the metal nanowire film covered with the mask, so that the metal nanowire film in the hollow area of the mask is combined with the graphene oxide layer; S312: Remove the mask ; S411: Using a surface-adhesive flexible substrate, a metal nanowire film combined with a graphene oxide layer is adhered and peeled off from the rigid substrate to obtain a flexible transparent conductive film with a mask hollow area pattern; S5: Graphite oxide The graphene dispersion was coated on the surface of the metal nanowire film left on the rigid substrate; S6: Using a surface-adhesive flexible substrate, the metal nanowire film combined with the graphene oxide layer was adhered and peeled off from the rigid substrate to obtain A flexible transparent conductive film with a pattern of mask coverage areas.
如下实施例1为本申请第一实施方式的一个举例,对比例1为实施例1的对比举例。The following Example 1 is an example of the first embodiment of the present application, and Comparative Example 1 is a comparative example of Example 1.
实施例1Example 1
(1)将银纳米线(直径30nm,长度20μm)的水相分散液用乙醇稀释至3mg/ml,通过涂布器涂膜在洁净的玻璃基底上,自然干燥形成银纳米线网络透明导电薄膜。(1) Dilute the aqueous dispersion of silver nanowires (30 nm in diameter, 20 μm in length) with ethanol to 3 mg/ml, apply a film on a clean glass substrate through an applicator, and dry naturally to form a transparent conductive film of silver nanowire network .
(2)在银纳米线薄膜表面覆盖具有图案结构的掩模,掩模与薄膜表面贴紧。掩模图案为500μm×20mm的栅极图案,条纹间距为500μm。(2) Covering the surface of the silver nanowire film with a mask having a pattern structure, and the mask is closely attached to the surface of the film. The mask pattern is a gate pattern of 500 μm×20 mm, and the stripe pitch is 500 μm.
(3)配制2mg/ml的氧化石墨烯分散液,滴涂在掩模镂空区域的银纳米线薄膜表面,用氮气枪吹走多余溶液并自然干燥。(3) Prepare 2mg/ml graphene oxide dispersion, drop-coat on the surface of the silver nanowire film in the hollow area of the mask, blow away the excess solution with a nitrogen gun and dry naturally.
(4)取下掩模。(4) Remove the mask.
(5)采用购自上海积日电子有限公司的PE保护膜(微弱粘性)作为柔性基底,将PE柔性基底贴附于氧化石墨烯-银纳米线-玻璃基底表面(PE柔性基底与氧化石墨烯层贴合),驱除气泡,剥离。经上述步骤,掩模镂空位置的银纳米线薄膜被氧化石墨烯层转移至PE基底,获得宽度和间距都为500μm的银纳米线薄膜栅极图案,其光学显微镜放大图像如图2所示。(5) The PE protective film (weak viscosity) purchased from Shanghai Jiri Electronics Co., Ltd. was used as the flexible substrate, and the PE flexible substrate was attached to the surface of the graphene oxide-silver nanowire-glass substrate (PE flexible substrate and graphene oxide layer bonding), drive out air bubbles, peel off. After the above steps, the silver nanowire film at the hollow position of the mask was transferred to the PE substrate by the graphene oxide layer, and the gate pattern of the silver nanowire film with a width and a spacing of 500 μm was obtained. The enlarged image of the optical microscope is shown in Figure 2.
(6)在遗留于玻璃基底上的银纳米线图案表面,再次滴涂氧化石墨烯分散液,用氮气枪吹走多余溶液并自然干燥。(6) On the surface of the silver nanowire pattern left on the glass substrate, drop-coat graphene oxide dispersion again, blow off the excess solution with a nitrogen gun and dry naturally.
(7)将步骤(5)所述PE柔性基底贴附于氧化石墨烯-银纳米线-刚性基底表面(PE柔性基底与氧化石墨烯层贴合),驱除气泡,剥离。经上述步骤,遗留在玻璃基底的银纳米线薄膜图案被氧化石墨烯转移至PE基底,获得与步骤(2)所述掩模图案相同的(宽度和间距都为500μm)的银纳米线薄膜栅极图案。(7) The PE flexible substrate in step (5) is attached to the surface of the graphene oxide-silver nanowire-rigid substrate (the PE flexible substrate is bonded to the graphene oxide layer), and the air bubbles are removed and peeled off. After the above steps, the silver nanowire thin film pattern left on the glass substrate was transferred to the PE substrate by graphene oxide, and the silver nanowire thin film grid with the same (width and spacing of 500 μm) as the mask pattern described in step (2) was obtained. pole pattern.
本实施例通过两次转移,制备两种银纳米线-氧化石墨烯-PE柔性薄膜图案,分别对应掩模图案和镂空图案,银纳米线薄膜被完全利用,图案边界清晰,薄膜区域的方阻约为25Ω/□,导电性能优良,透光率达85%以上。In this example, two silver nanowire-graphene oxide-PE flexible film patterns are prepared through two transfers, corresponding to the mask pattern and the hollow pattern respectively. The silver nanowire film is fully utilized, the pattern boundary is clear, and the square resistance of the film area is About 25Ω/□, excellent electrical conductivity, light transmittance of more than 85%.
对比例1Comparative Example 1
(1)将银纳米线(直径30nm,长度20μm)的水相分散液用乙醇稀释至3mg/ml,通过涂布器涂膜在洁净的玻璃基底上,自然干燥形成银纳米线网络透明导电薄膜。(1) Dilute the aqueous dispersion of silver nanowires (30 nm in diameter, 20 μm in length) with ethanol to 3 mg/ml, apply a film on a clean glass substrate through an applicator, and dry naturally to form a transparent conductive film of silver nanowire network .
(2)将前述PE保护膜(微弱粘性)贴附于银纳米线-玻璃基底表面,除去气泡,剥离。(2) The above-mentioned PE protective film (weak adhesive) was attached to the surface of the silver nanowire-glass substrate, the air bubbles were removed, and then peeled off.
经上述步骤,银纳米线薄膜仍然完整位于玻璃基底上,导电性和透光性几乎没有变化。PE保护膜(微弱粘性)基底上没有获得银纳米线薄膜。After the above steps, the silver nanowire film is still completely located on the glass substrate, and the conductivity and light transmittance are almost unchanged. No silver nanowire films were obtained on PE protective film (weakly tacky) substrates.
本申请的第二实施方式涉及的柔性透明导电薄膜的制备方法,其流程图如图3所示,具体包括如下步骤:S1:在刚性基底上涂布金属纳米线薄膜;S2:在金属纳米线薄膜上覆盖掩模;S311:将氧化石墨烯分散液涂膜于覆盖有掩模的金属纳米线薄膜表面,使掩模镂空区域的金属纳米线薄膜结合氧化石墨烯层;S312:移除掩模;S411:使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜并从刚性基底上剥离,得到具有掩模镂空区域图案的柔性透明导电薄膜。The preparation method of the flexible transparent conductive film according to the second embodiment of the present application, the flowchart of which is shown in FIG. 3 , and specifically includes the following steps: S1: coating a metal nanowire film on a rigid substrate; S2: coating the metal nanowires Cover the film with a mask; S311: Coat the graphene oxide dispersion on the surface of the metal nanowire film covered with the mask, so that the metal nanowire film in the hollow area of the mask is combined with the graphene oxide layer; S312: Remove the mask ; S411: Using a surface-adherable flexible substrate, a metal nanowire film combined with a graphene oxide layer is adhered and peeled off from the rigid substrate to obtain a flexible transparent conductive film with a mask hollow area pattern.
如下实施例2为本申请第二实施方式的一个举例,对比例2为实施例2的对比举例。The following Example 2 is an example of the second embodiment of the present application, and Comparative Example 2 is a comparative example of Example 2.
实施例2Example 2
(1)将银纳米线(直径30nm,长度20μm)的水相分散液用乙醇稀释至3mg/ml,通过涂布器涂膜在洁净的玻璃基底上,自然干燥形成银纳米线网络透明导电薄膜。(1) Dilute the aqueous dispersion of silver nanowires (30 nm in diameter, 20 μm in length) with ethanol to 3 mg/ml, apply a film on a clean glass substrate through an applicator, and dry naturally to form a transparent conductive film of silver nanowire network .
(2)在银纳米线薄膜表面覆盖具有图案结构的掩模,掩模与薄膜表面贴紧。掩模图案为150μm×20mm的栅极图案,条纹间距为300μm。(2) Covering the surface of the silver nanowire film with a mask having a pattern structure, and the mask is closely attached to the surface of the film. The mask pattern is a gate pattern of 150 μm×20 mm, and the stripe pitch is 300 μm.
(3)配制2mg/ml的氧化石墨烯分散液,滴涂在掩模镂空区域的银纳米线薄膜表面,用氮气枪吹走多余溶液并自然干燥。(3) Prepare 2mg/ml graphene oxide dispersion, drop-coat on the surface of the silver nanowire film in the hollow area of the mask, blow away the excess solution with a nitrogen gun and dry naturally.
(4)制备PDMS薄膜,在PDMS薄膜表面旋涂液体胶水(得力No.7304),转速为3000rpm,时间为1min。(4) A PDMS film was prepared, and liquid glue (Deli No. 7304) was spin-coated on the surface of the PDMS film at a rotational speed of 3000 rpm and a time of 1 min.
(5)取下掩模,将上述PDMS基底贴附于氧化石墨烯-银纳米线-玻璃基底表面,驱除气泡,在胶水固化之前剥离。(5) Remove the mask, attach the above PDMS substrate to the surface of the graphene oxide-silver nanowire-glass substrate, remove air bubbles, and peel off before the glue is cured.
经上述步骤,掩模镂空位置的银纳米线薄膜被氧化石墨烯层转移至PDMS基底,获得宽度为300μm的银纳米线-氧化石墨烯栅极图案,其光学显微镜放大图像如图4所示。After the above steps, the silver nanowire film at the hollow position of the mask was transferred to the PDMS substrate by the graphene oxide layer, and a silver nanowire-graphene oxide gate pattern with a width of 300 μm was obtained. The enlarged image of the optical microscope is shown in Figure 4.
本实施例制备的银纳米线-氧化石墨烯-PDMS柔性薄膜图案,图案边界清晰,薄膜区域的方阻约为32Ω/□,导电性能优良,透光率达85%以上。The silver nanowire-graphene oxide-PDMS flexible thin film pattern prepared in this example has a clear pattern boundary, the square resistance of the thin film region is about 32Ω/□, the electrical conductivity is excellent, and the light transmittance is over 85%.
对比例2Comparative Example 2
(1)将银纳米线(直径30nm,长度20μm)的水相分散液用乙醇稀释至3mg/ml,通过涂布器涂膜在洁净的玻璃基底上,自然干燥形成银纳米线网络透明导电薄膜。(1) Dilute the aqueous dispersion of silver nanowires (30 nm in diameter, 20 μm in length) with ethanol to 3 mg/ml, apply a film on a clean glass substrate through an applicator, and dry naturally to form a transparent conductive film of silver nanowire network .
(2)制备PDMS薄膜,在PDMS薄膜表面旋涂液体胶水(得力No.7304),转速为3000rpm,时间为1min。(2) A PDMS film was prepared, and a liquid glue (Deli No. 7304) was spin-coated on the surface of the PDMS film at a rotational speed of 3000 rpm and a time of 1 min.
(3)将上述PDMS基底贴附于银纳米线-玻璃基底表面,驱除气泡,在胶水固化之前剥离。(3) Attach the above PDMS substrate to the surface of the silver nanowire-glass substrate, remove air bubbles, and peel off before the glue is cured.
经上述步骤,银纳米线薄膜仍然完整位于玻璃基底上,导电性和透光性几乎没有变化。PDMS基底上没有获得银纳米线薄膜。After the above steps, the silver nanowire film is still completely located on the glass substrate, and the conductivity and light transmittance are almost unchanged. No silver nanowire films were obtained on PDMS substrates.
本申请的第三实施方式涉及的柔性透明导电薄膜的制备方法,其流程图如图5所示,具体包括如下步骤:S1:在刚性基底上涂布金属纳米线薄膜;S2:在金属纳米线薄膜上覆盖掩模;S321:对覆盖有掩模的金属纳米线薄膜进行紫外臭氧处理或等离子体清洗处理,使掩模镂空区域的金属纳米线薄膜失去与氧化石墨烯的粘附力;S322:移除掩模;S323:将氧化石墨烯分散液涂膜于银纳米线薄膜表面,使掩模覆盖区域的金属纳米线薄膜结合氧化石墨烯层。S421:使用表面可粘附的柔性基底,粘附结合有氧化石墨烯层的金属纳米线薄膜并从刚性基底上剥离,得到具有掩模覆盖区域图案的柔性透明导电薄膜The preparation method of the flexible transparent conductive film according to the third embodiment of the present application, the flowchart of which is shown in FIG. 5 , and specifically includes the following steps: S1: coating a metal nanowire film on a rigid substrate; S2: coating the metal nanowires Cover the film with a mask; S321: Perform ultraviolet ozone treatment or plasma cleaning treatment on the metal nanowire film covered with the mask, so that the metal nanowire film in the hollow area of the mask loses adhesion to graphene oxide; S322: removing the mask; S323: coating the graphene oxide dispersion liquid on the surface of the silver nanowire film, so that the metal nanowire film in the area covered by the mask is combined with the graphene oxide layer. S421: Using a surface-adhesive flexible substrate, a metal nanowire film incorporating a graphene oxide layer is adhered and peeled off from the rigid substrate to obtain a flexible transparent conductive film with a pattern of mask coverage areas
如下实施例3、4分别为本申请第三实施方式的举例,对比例3为实施例3和4的对比举例。The following Examples 3 and 4 are respectively examples of the third embodiment of the present application, and Comparative Example 3 is a comparative example of Examples 3 and 4.
实施例3Example 3
(1)将银纳米线(直径30nm,长度20μm)的水相分散液用乙醇稀释至3mg/ml,通过涂布器涂膜在洁净的玻璃基底上,自然干燥形成银纳米线网络透明导电薄膜。(1) Dilute the aqueous dispersion of silver nanowires (30 nm in diameter, 20 μm in length) with ethanol to 3 mg/ml, apply a film on a clean glass substrate through an applicator, and dry naturally to form a transparent conductive film of silver nanowire network .
(2)在银纳米线薄膜表面覆盖具有图案结构的掩模,掩模与薄膜表面贴紧,掩模由Ecoflex硅胶材料制备,图案为5mm×20mm的栅极图案,条纹间距为5mm。(2) Cover the surface of the silver nanowire film with a mask with a pattern structure, the mask is closely attached to the surface of the film, the mask is made of Ecoflex silica gel material, the pattern is a grid pattern of 5mm×20mm, and the stripe spacing is 5mm.
(3)对覆盖掩模的银纳米线薄膜进行紫外臭氧处理(掩模镂空区域的银纳米线薄膜接受到紫外臭氧处理),紫外清洗机灯管功率为100W,处理时间2min,紫外光波长为185nm和254nm。(3) The silver nanowire film covering the mask is subjected to ultraviolet ozone treatment (the silver nanowire film in the hollow area of the mask is subjected to ultraviolet ozone treatment), the lamp power of the ultraviolet cleaning machine is 100W, the treatment time is 2min, and the ultraviolet light wavelength is 185nm and 254nm.
(4)取下掩模,将2mg/ml氧化石墨烯分散液滴涂在银纳米线薄膜表面,用氮气枪吹走多余溶液并干燥。(4) Remove the mask, apply 2 mg/ml graphene oxide dispersion droplets on the surface of the silver nanowire thin film, blow off the excess solution with a nitrogen gun and dry.
(5)采用购自上海积日电子有限公司的PE保护膜(微粘胶带)作为柔性基底,将上述基底贴附于氧化石墨烯-银纳米线-玻璃基底表面(基底与氧化石墨烯层贴合),驱除气泡,剥离。(5) Using the PE protective film (micro-adhesive tape) purchased from Shanghai Jiri Electronics Co., Ltd. as a flexible substrate, the above-mentioned substrate is attached to the surface of graphene oxide-silver nanowire-glass substrate (substrate and graphene oxide layer) fit), remove air bubbles, peel off.
经上述步骤,掩模图案覆盖的银纳米线薄膜被氧化石墨烯层转移至柔性基底,获得宽度和间距都为5mm的银纳米线-氧化石墨烯栅极图案,其光学显微镜放大图像如图6所示。After the above steps, the silver nanowire film covered by the mask pattern was transferred to the flexible substrate by the graphene oxide layer, and the silver nanowire-graphene oxide gate pattern with a width and a spacing of 5 mm was obtained. The enlarged image of the optical microscope is shown in Figure 6. shown.
本实施例制备的银纳米线-氧化石墨烯-柔性基底的栅极图案,图案边界清晰且与掩模图案一致,薄膜区域的方阻约为25Ω/□,导电性能优良,透光率达85%以上。The gate pattern of the silver nanowire-graphene oxide-flexible substrate prepared in this example has a clear pattern boundary and is consistent with the mask pattern, the square resistance of the thin film area is about 25Ω/□, the electrical conductivity is excellent, and the light transmittance reaches 85 %above.
实施例4Example 4
实施例4的步骤(1)、(2)、(4)、(5)均与实施例3相同,区别仅在于步骤(3)为:对覆盖掩模的银纳米线薄膜进行等离子体清洗处理(掩模镂空区域的银纳米线薄膜接受到等离子体清洗),等离子体清洗机功率为100W,处理时间1min。Steps (1), (2), (4), and (5) of Example 4 are the same as those of Example 3, except that step (3) is: performing plasma cleaning on the silver nanowire film covering the mask (The silver nanowire film in the hollow area of the mask was cleaned by plasma), the power of the plasma cleaning machine was 100W, and the processing time was 1min.
经上述步骤,掩模图案覆盖的银纳米线薄膜被氧化石墨烯层转移至柔性基底,获得宽度和间距都为5mm的银纳米线-氧化石墨烯柔性栅极图案,图案边界清晰且与掩模图案一致,薄膜区域的方阻约为25Ω/□,导电性能优良,透光率达85%以上。After the above steps, the silver nanowire thin film covered by the mask pattern was transferred to the flexible substrate by the graphene oxide layer to obtain a silver nanowire-graphene oxide flexible gate pattern with a width and a spacing of 5 mm, and the pattern boundary was clear and consistent with the mask. The pattern is consistent, the square resistance of the film area is about 25Ω/□, the electrical conductivity is excellent, and the light transmittance is over 85%.
对比例3Comparative Example 3
作为对比,重复实施例3中的(1)、(2)、(4)、(5)步骤,但覆盖掩模的银纳米线薄膜未经步骤(3)的紫外臭氧处理。步骤(5)中,柔性基底撕下后,银纳米线薄膜全部被氧化石墨烯转移至柔性基底,获得完整的银纳米线-氧化石墨烯柔性薄膜,而非薄膜图案。For comparison, steps (1), (2), (4), and (5) in Example 3 were repeated, but the silver nanowire film covering the mask was not subjected to the ultraviolet ozone treatment in step (3). In step (5), after the flexible substrate is torn off, all the silver nanowire films are transferred to the flexible substrate by graphene oxide to obtain a complete silver nanowire-graphene oxide flexible film instead of a film pattern.
本申请的第四实施方式涉及的柔性透明导电薄膜的制备方法,其流程图如图7所示,具体包括如下步骤:SS1:在刚性基底上覆盖掩模;SS2:在覆盖有掩模的刚性基底表面涂布金属纳米线薄膜;使所述金属纳米线薄膜分别沉积在掩模覆盖区域的掩模表面和掩模镂空区域的刚性基底表面;SS3:在金属纳米线薄膜表面涂布氧化石墨烯分散液,使所述沉积在掩模覆盖区域的掩模表面和掩模镂空区域的刚性基底表面的金属纳米线薄膜分别结合氧化石墨烯层;SS4:将掩模与刚性基底分离;SS5:使用表面可粘附的柔性基底,粘附刚性基底上结合有氧化石墨烯层的金属纳米线薄膜,并从刚性基底上剥离,得到具有掩模镂空区域图案的柔性透明导电薄膜;SS6:使用表面可粘附的柔性基底,粘附掩模表面结合有氧化石墨烯层的金属纳米线薄膜,并从掩模表面剥离,得到具有掩模覆盖区域图案的柔性透明导电薄膜。The manufacturing method of the flexible transparent conductive film according to the fourth embodiment of the present application, the flowchart of which is shown in FIG. 7 , and specifically includes the following steps: SS1: cover the mask on the rigid substrate; SS2: cover the rigid substrate with the mask The surface of the substrate is coated with a metal nanowire film; the metal nanowire film is deposited on the mask surface of the mask coverage area and the rigid substrate surface of the mask hollow area respectively; SS3: coating graphene oxide on the surface of the metal nanowire film Dispersion, so that the metal nanowire films deposited on the mask surface of the mask covered area and the rigid substrate surface of the mask hollow area are respectively combined with the graphene oxide layer; SS4: separate the mask from the rigid substrate; SS5: use Surface-adherable flexible substrate, adhere to the metal nanowire film combined with graphene oxide layer on the rigid substrate, and peel off from the rigid substrate to obtain a flexible transparent conductive film with a pattern of masked hollow areas; SS6: Using surface-adherable The adhered flexible substrate, the metal nanowire film with the graphene oxide layer combined on the surface of the mask is adhered, and peeled from the surface of the mask to obtain a flexible transparent conductive film with a pattern of the mask coverage area.
如下实施例5为本申请第四实施方式的举例。The following Example 5 is an example of the fourth embodiment of the present application.
实施例5Example 5
(1)在洁净的玻璃基底表面覆盖具有图案结构的玻璃掩模,掩模与基底表面贴紧。掩模图案为500μm×20mm的栅极图案,条纹间距为500μm。(1) Cover the surface of the clean glass substrate with a glass mask with a pattern structure, and the mask is in close contact with the surface of the substrate. The mask pattern is a gate pattern of 500 μm×20 mm, and the stripe pitch is 500 μm.
(2)将银纳米线(直径30nm,长度20μm)在异丙醇中的分散液喷涂在基底和掩模上,100℃干燥5min,分别在掩模和基底(掩模的镂空区域)上形成银纳米线网络透明导电薄膜的图案结构。(2) The dispersion of silver nanowires (30 nm in diameter, 20 μm in length) in isopropanol was sprayed on the substrate and the mask, dried at 100° C. for 5 min, and formed on the mask and the substrate (the hollow area of the mask) respectively. Patterned structure of silver nanowire network transparent conductive films.
(3)配制2mg/ml的氧化石墨烯分散液,喷涂在掩模和基底(掩模的镂空区域)的银纳米线薄膜表面。(3) 2 mg/ml graphene oxide dispersion solution was prepared and sprayed on the surface of the silver nanowire thin film of the mask and the substrate (the hollow area of the mask).
(4)取下掩模。(4) Remove the mask.
(5)采用购自上海积日电子有限公司的PE胶带(微弱粘性)作为柔性基底,贴附于玻璃基底上的氧化石墨烯-银纳米线薄膜图案的表面,驱除气泡,剥离。经上述步骤,玻璃基底上的银纳米线薄膜图案被氧化石墨烯层转移至PE基底,获得宽度和间距都为500μm的银纳米线薄膜栅极图案。(5) Using PE tape (weakly viscous) purchased from Shanghai Jiri Electronics Co., Ltd. as a flexible substrate, attached to the surface of the graphene oxide-silver nanowire thin film pattern on the glass substrate, removing air bubbles, and peeling off. After the above steps, the silver nanowire thin film pattern on the glass substrate was transferred to the PE substrate by the graphene oxide layer to obtain a silver nanowire thin film gate pattern with a width and a spacing of 500 μm.
(6)将步骤(5)所述PE柔性基底贴附于图案掩模上的氧化石墨烯-银纳米线薄膜图案表面,驱除气泡,剥离。经上述步骤,玻璃掩模上的银纳米线薄膜图案被氧化石墨烯层转移至PE基底,获得宽度和间距都为500μm的银纳米线薄膜栅极图案。(6) Attaching the PE flexible substrate described in step (5) to the patterned surface of the graphene oxide-silver nanowire thin film on the pattern mask, removing air bubbles, and peeling off. After the above steps, the silver nanowire thin film pattern on the glass mask was transferred to the PE substrate by the graphene oxide layer to obtain a silver nanowire thin film gate pattern with a width and a spacing of 500 μm.
综上,涂布于刚性基底上的银纳米线薄膜,与基底存在一定的粘附性,表面胶水尚未干燥的柔性基底或者微粘胶带不能将银纳米线导电网络从玻璃基底上转移下来。实施例1、2中,借助氧化石墨烯与银纳米线和柔性基底的双面强粘附作用,将银纳米线薄膜完整转移至柔性基底上,即使在微粘或者表面胶水尚未干燥的柔性基底上也能完整转移,形成导电性优良的柔性薄膜。In summary, the silver nanowire film coated on the rigid substrate has a certain adhesion to the substrate, and the flexible substrate or micro-adhesive tape whose surface glue has not dried cannot transfer the silver nanowire conductive network from the glass substrate. In Examples 1 and 2, by virtue of the double-sided strong adhesion of graphene oxide to silver nanowires and flexible substrates, the silver nanowire films were completely transferred to the flexible substrates, even on the flexible substrates that were slightly sticky or the surface glue had not yet dried. It can also be completely transferred to form a flexible film with excellent conductivity.
实施例1和实施例2对覆盖掩模的银纳米线薄膜涂布氧化石墨烯层,即可将掩模镂空区域(即覆盖氧化石墨烯层)的银纳米线转移至各类柔性基底。进一步地,实施例1中,在遗留于玻璃基底上的银纳米线薄膜图案表面再次覆盖氧化石墨烯层,成功地将这部分遗留的银纳米线薄膜图案转移至柔性基底,有效提高了银纳米线薄膜的利用效率并简化了银纳米线柔性透明导电薄膜的制备工艺。对比例1和对比例2中没有涂布氧化石墨烯层,银纳米线薄膜与微粘基底的粘附作用很弱,无法转移至柔性基底。In Example 1 and Example 2, the silver nanowire film covering the mask is coated with a graphene oxide layer, and the silver nanowires in the hollow area of the mask (ie, covering the graphene oxide layer) can be transferred to various flexible substrates. Further, in Example 1, the surface of the silver nanowire thin film pattern left on the glass substrate was covered with a graphene oxide layer again, and this part of the leftover silver nanowire thin film pattern was successfully transferred to the flexible substrate, which effectively improved the silver nanowires. The utilization efficiency of the wire film is improved and the preparation process of the silver nanowire flexible transparent conductive film is simplified. In Comparative Example 1 and Comparative Example 2, the graphene oxide layer was not coated, and the adhesion of the silver nanowire film to the micro-adhesive substrate was weak and could not be transferred to the flexible substrate.
实施例3、4利用了银纳米线经紫外臭氧处理或等离子体清洗后,表面结构特征变化导致与氧化石墨烯粘附力显著减弱、无法通过氧化石墨烯粘附作用进行转移的特性;同时亲水处理后的刚性基底与氧化石墨烯的粘附性能增强,导致表面氧化石墨烯的可转移性降低。通过掩模对银纳米线薄膜选择性地进行紫外臭氧或等离子体清洗处理,移去掩模,涂布氧化石墨烯层,即可将掩模覆盖(屏蔽紫外臭氧或等离子体清洗处理)区域的银纳米线转移至各类柔性基底,紫外臭氧或等离子体清洗处理1~2min即可达到上述效果。显然,与疏水基底亲水处理或者紫外臭氧腐蚀薄膜等方法所需的几十分钟乃至几个小时的处理时间相比,本发明所提供的方法可以显著降低能耗和污染。对比例3中没有进行紫外臭氧或等离子体清洗处理,因此全部银纳米线薄膜都与氧化石墨烯有很强的粘附力,薄膜被完整转移至柔性基底。Embodiments 3 and 4 utilize the characteristics of silver nanowires that, after being treated with ultraviolet ozone or plasma cleaned, the change in the surface structure characteristics leads to a significant weakening of the adhesion with graphene oxide and cannot be transferred through the adhesion of graphene oxide; The adhesion of the rigid substrate to graphene oxide after water treatment was enhanced, resulting in a decrease in the transferability of surface graphene oxide. The silver nanowire film is selectively cleaned by ultraviolet ozone or plasma through a mask, the mask is removed, and the graphene oxide layer is applied, and the mask can be covered (shielding ultraviolet ozone or plasma cleaning) in the area. The silver nanowires are transferred to various flexible substrates, and the above effects can be achieved by ultraviolet ozone or plasma cleaning for 1 to 2 minutes. Obviously, the method provided by the present invention can significantly reduce energy consumption and pollution compared with the processing time of tens of minutes or even several hours required by methods such as hydrophilic treatment of hydrophobic substrates or ultraviolet ozone etching of thin films. In Comparative Example 3, no ultraviolet ozone or plasma cleaning treatment was performed, so all the silver nanowire films had strong adhesion to graphene oxide, and the films were completely transferred to the flexible substrate.
而实施例5,则先在玻璃基底和玻璃掩模上制备银纳米线薄膜的图案结构,然后分别通过氧化石墨烯层转移至柔性基底,制备两种柔性薄膜图案,分别对应掩模覆盖区域图案和掩模镂空区域图案,银纳米线薄膜被完全利用,图案边界清晰,透光性和导电性优良。如果只需要得到玻璃基底上的银纳米线图案,掩模材料也可以使用其他强度更高、但与银纳米线粘附性较强的材料替代玻璃。In Example 5, the pattern structure of the silver nanowire thin film was first prepared on the glass substrate and the glass mask, and then transferred to the flexible substrate through the graphene oxide layer, respectively, to prepare two flexible thin film patterns, corresponding to the pattern of the mask coverage area respectively. And the pattern of the hollow area of the mask, the silver nanowire film is fully utilized, the pattern boundary is clear, and the light transmittance and conductivity are excellent. If only the silver nanowire pattern on the glass substrate needs to be obtained, the mask material can also use other materials with higher strength but stronger adhesion to the silver nanowires instead of glass.
此外,在上述各实施例中,还采用了氮气枪吹走多余溶液(实现回收利用),只需极薄的氧化石墨烯层即可实现选择性的粘附转移,既能提高薄膜透光性,又可节约材料。与现有技术相比,本发明所提供的柔性透明导电薄膜的制备方法,工艺过程简单环保,无高温、高压、真空过滤等复杂工序,无需昂贵设备和大量材料消耗,且能实现金属纳米线薄膜图案从刚性基底向各类柔性基底,包括疏水基底的完整转移,具有良好的图案精度和光电性能,更可实现金属纳米线薄膜的完全利用。In addition, in the above embodiments, a nitrogen gun is used to blow away excess solution (recycling), and only a very thin graphene oxide layer can be used to achieve selective adhesion and transfer, which can not only improve the light transmittance of the film , and save materials. Compared with the prior art, the preparation method of the flexible transparent conductive film provided by the present invention is simple and environmentally friendly, has no complicated procedures such as high temperature, high pressure, vacuum filtration, etc., does not require expensive equipment and a large amount of material consumption, and can realize metal nanowires. The complete transfer of film patterns from rigid substrates to various flexible substrates, including hydrophobic substrates, has good pattern accuracy and optoelectronic properties, and can fully utilize metal nanowire films.
上述实施例只为说明本发明的技术构思及特点,其目的在于让熟悉此项技术的本领域的普通技术人员能够了解本发明的内容并据以实施,并不能以此限制本发明的保护范围。凡根据本发明精神实质所做的等效变换或修饰,都应涵盖在本发明的保护范围之内。The above-mentioned embodiments are only for illustrating the technical concept and characteristics of the present invention, and the purpose thereof is to enable those of ordinary skill in the art who are familiar with the technology to understand the content of the present invention and implement them accordingly, and cannot limit the protection scope of the present invention. . All equivalent transformations or modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
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