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CN112176322A - Substrate processing apparatus, method for manufacturing semiconductor device, and program - Google Patents

Substrate processing apparatus, method for manufacturing semiconductor device, and program Download PDF

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Publication number
CN112176322A
CN112176322A CN201910871855.4A CN201910871855A CN112176322A CN 112176322 A CN112176322 A CN 112176322A CN 201910871855 A CN201910871855 A CN 201910871855A CN 112176322 A CN112176322 A CN 112176322A
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China
Prior art keywords
substrate
gas
supplied
region
electromagnetic wave
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CN201910871855.4A
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Chinese (zh)
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CN112176322B (en
Inventor
油谷幸则
广濑义朗
大桥直史
高崎唯史
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Kokusai Electric Corp
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Kokusai Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The invention provides a substrate processing apparatus capable of selectively processing a substrate with a groove. The substrate processing apparatus includes: a substrate mounting section provided in the processing chamber and having a substrate mounting surface on which a substrate having a plurality of grooves is mounted; a gas supply unit configured to supply a process gas to the process chamber; an exhaust unit configured to exhaust ambient gas from the processing chamber; and an electromagnetic wave supply unit configured to supply an electromagnetic wave from a side of the substrate to treat a surface of the groove.

Description

Substrate processing apparatus, method for manufacturing semiconductor device, and program
Technical Field
The invention relates to a substrate processing apparatus, a method of manufacturing a semiconductor device, and a program.
Background
In the process of manufacturing a semiconductor device, with the recent trend toward miniaturization, a groove having a large aspect ratio is formed in a substrate, and various processes are performed on the groove and the surrounding structure. As a method for treating the periphery of the tank, for example, there is a technique described in patent document 1.
Disclosure of Invention
Problems to be solved by the invention
The width is, for example, 10 to 20nm in length. In general, it is conceivable to use photolithography technique to form a groove in a substrate, but in the case of such a width, it is difficult to form a highly accurate mask because of a large influence of alignment error, and thus it is difficult to form a groove at an accurate position.
For this reason, it is conceivable to form a protective film on the surface of the substrate so as to avoid etching at a place other than the desired position. However, since the gas is uniformly supplied to the substrate surface when the protective film is formed, the protective film is formed not only on the substrate surface but also in the groove. In this case, since an undesirable component remains in the trench, the semiconductor device does not satisfy desired performance.
In view of the above, the present invention aims to: provided is a technique capable of selectively processing a substrate having a groove.
Patent document 1: japanese patent laid-open No. 2014-75579
Means for solving the problems
One embodiment for solving the above problem is a technique including: a substrate mounting section provided in the processing chamber and having a substrate mounting surface on which a substrate having a plurality of grooves is mounted; a gas supply unit configured to supply a process gas to the process chamber; an exhaust unit configured to exhaust ambient gas from the processing chamber; and an electromagnetic wave supply unit configured to supply an electromagnetic wave from a side of the substrate to treat a surface of the groove.
Effects of the invention
According to this technique, a technique capable of selectively processing a substrate having a groove can be provided.
Drawings
Fig. 1 is an explanatory view illustrating a substrate processing apparatus according to a first embodiment.
Fig. 2 is an explanatory view for explaining the gas supply unit.
Fig. 3 is an explanatory diagram illustrating a controller of the substrate processing apparatus.
Fig. 4 is an explanatory diagram illustrating a flow of substrate processing.
Fig. 5 is an explanatory diagram for explaining a state of the substrate.
Fig. 6 is an explanatory diagram for explaining a state of the substrate.
Fig. 7 is an explanatory view illustrating a substrate processing apparatus according to a second embodiment.
Fig. 8 is an explanatory view for explaining a substrate processing apparatus according to the second embodiment.
Fig. 9 is an explanatory diagram illustrating a flow of substrate processing.
Fig. 10 is an explanatory view illustrating a substrate processing apparatus according to a third embodiment.
Fig. 11 is an explanatory view for explaining a substrate processing apparatus according to the fourth embodiment.
Fig. 12 is an explanatory view illustrating a substrate processing apparatus according to a fifth embodiment.
Description of the reference numerals
100: a substrate;
101: a column;
102: a groove;
103: a surface;
200: a substrate processing apparatus;
201: a processing chamber;
240: a first gas supply section;
250: a second gas supply unit;
260: a purge gas supply unit;
280: an exhaust section;
292: an electromagnetic wave supply unit;
301: a processing chamber;
334: a first exhaust portion;
335: a second exhaust portion.
Detailed Description
(first embodiment)
An example of a substrate processing apparatus 200 that processes a substrate and a substrate processing method using the substrate processing apparatus 200 will be described with reference to fig. 1.
(substrate processing apparatus)
The substrate processing apparatus 200 includes a chamber 202. The chamber 202 is, for example, circular in cross section and is configured as a flat closed container. In the chamber 202, a processing space 205 for processing a substrate 100 such as a silicon wafer as a substrate and a transfer space 206 through which the substrate 100 passes when the substrate 100 is transferred to the processing space 205 are formed. The chamber 202 is composed of an upper container 202a and a lower container 202 b.
A substrate transfer inlet 148 adjacent to the gate valve 149 is provided on a side surface of the lower container 202b, and the substrate 100 is moved between the vacuum transfer chamber, not shown, and the substrate transfer inlet 148. A plurality of lift pins 207 are provided at the bottom of the lower container 202 b.
The processing chamber 201 constituting the processing space 205 is constituted by, for example, a substrate mounting table 212 and a shower head 230 described later. A substrate support portion 210 for supporting the substrate 100 is provided in the processing space 205. The substrate support 210 mainly includes a substrate mounting surface 211 on which the substrate 100 is mounted, a substrate mounting table 212 having the substrate mounting surface 211 on the surface thereof, and a heater 213 as a heat source built in the substrate mounting table 212.
Through holes 214 through which the lift pins 207 are inserted are provided in the substrate mounting table 212 at positions corresponding to the lift pins 207, respectively. The heater 213 is connected to a temperature control unit 220 that controls the temperature of the heater 213.
The substrate mounting table 212 is supported by a shaft 217. The support portion of the shaft 217 penetrates a hole provided in the bottom wall of the chamber 202, and is connected to the lifting/lowering rotating portion 218 outside the chamber 202 via the support plate 216. The substrate 100 placed on the substrate placing surface 211 can be raised and lowered by operating the lifting and lowering rotating unit 218 to raise and lower the shaft 217 and the substrate placing table 212. Further, the substrate mounting table 212 can be rotated by operating the elevation rotation unit 218. Further, the periphery of the lower end portion of the shaft 217 is covered with a bellows 219. The chamber 202 is kept airtight.
The vertically movable rotating unit 218 mainly includes a support shaft 218a for supporting the shaft 217 and an operating unit 218b for vertically moving or rotating the support shaft 218 a. The working portion 218b includes, for example, an elevating portion 218c including a motor for elevating and lowering, and a rotating mechanism 218d such as a gear for rotating the support shaft 218 a. They are coated with grease or the like to make them flexible in their movements.
The substrate mounting table 212 is lowered to a position where the substrate mounting surface 211 faces the substrate carrying-out inlet 148 when the substrate 100 is carried, and is raised to a processing position where the substrate 100 is in the processing space 205 when the substrate 100 is processed, as shown in fig. 1.
A shower head 230 is provided in an upper portion (upstream side) of the processing space 205. The head 230 includes a cover 231. The lid 231 includes a rim 232, and the rim 232 is supported by the upper container 202 a. Further, the cover 231 includes a positioning portion 233. The positioning portion 233 is fitted to the upper container 202a, thereby fixing the lid 231.
The showerhead 230 has a buffer space 234. The buffer space 234 is a space formed by the cover 231 and the positioning portion 233. The buffer space 234 communicates with the processing space 205. The gas supplied to the buffer space 234 is diffused in the buffer space 234 and uniformly supplied to the processing space 205. Here, although the buffer space 234 and the processing space 205 are described as being separate from each other, the present invention is not limited thereto, and the buffer space 234 may be included in the processing space 205.
The lid 231 is provided with a first gas supply hole 235 for supplying a first gas, a second gas supply hole 236 for supplying a second gas, and a purge gas supply hole 237 for supplying a purge gas.
The first gas supply hole 235 is configured to communicate with a first gas supply pipe 241 as a part of the first gas supply portion 240. The second gas supply hole 236 is configured to communicate with a second gas supply pipe 251 which is a part of the second gas supply unit 250. The purge gas supply hole 237 is configured to communicate with a purge gas supply pipe 261 which is a part of the purge gas supply unit 260.
"a" shown in fig. 1 communicates with "a" shown in fig. 2. "B" is in communication with "B" shown in FIG. 2. "C" is in communication with "C" shown in FIG. 2.
Next, the gas supply unit is described with reference to fig. 2. Fig. 2(a) shows a first gas supply unit 240 as a part of the gas supply unit. The details thereof will be described with reference to fig. 2 (a). The first gas is mainly supplied from the first gas supply pipe 241.
A first gas supply source 242, an MFC243 as a flow rate controller (flow rate control unit), and a valve 244 as an on-off valve are provided in this order from the upstream side in the first gas supply pipe 241.
A gas containing a first element (hereinafter referred to as "first gas") is supplied from the first gas supply pipe 241 to the showerhead 230 via the MFC243, the valve 244, and the first gas supply pipe 241.
The first gas is one of the source gases, i.e., the process gases. Here, the first element is, for example, titanium (Ti). That is, the first gas is a metal gas and is a gas containing Ti. Specifically, tetrakis (dimethylamino) titanium (Ti [ N (CH) ]3)2]4Also known as TDMAT).
When the first gas is a liquid at normal temperature and normal pressure, a vaporizer, not shown, is preferably provided between the first gas supply source 242 and the MFC 243. Here, the gas will be described.
The first gas supply unit 240 is mainly constituted by a first gas supply pipe 241, an MFC243, and a valve 244. Further, it is also conceivable to include the first gas supply source 242 in the first gas supply unit 240.
Next, the second gas supply unit 250, which is a part of the gas supply unit, will be described with reference to fig. 2 (b). The second gas supply pipe 251 is provided with a second gas supply source 252, an MFC253 as a flow rate controller, and a valve 254 in this order from the upstream direction.
Further, a reaction gas that reacts with the first gas is supplied from the second gas supply pipe 251 into the showerhead 230. The reactant gas is also referred to as the second gas. The second gas is one of the process gases, for example, a nitrogen-containing gas. As the nitrogen-containing gas, ammonia (NH), for example, is used3)。
The second gas supply unit 250 is mainly constituted by a second gas supply pipe 251, an MFC253, and a valve 254. The second gas supply unit 250 is also referred to as a reaction gas supply unit because it has a structure for supplying a reaction gas. Further, the second gas supply source 252 may be included in the second gas supply unit 250.
Next, the purge gas supply unit 260, which is a part of the gas supply unit, will be described with reference to fig. 2 (c). The purge gas supply pipe 261 is provided with a purge gas supply source 262, an MFC263 as a flow rate controller, and a valve 264 in this order from the upstream direction.
Further, a purge gas is supplied into the showerhead 230 from a purge gas supply pipe 261. The purge gas is a gas that does not react with the first gas and the second gas, and is one of purge gases that purge the ambient gas in the process chamber 201, and is, for example, nitrogen (N)2)。
The purge gas supply unit 260 is mainly constituted by a purge gas supply pipe 261, an MFC263, and a valve 264. The purge gas supply 262 may be included in the purge gas supply 260.
The first gas supply unit 240, the second gas supply unit 250, and the purge gas supply unit 260 are collectively referred to as a gas supply unit.
Next, the exhaust unit 280 is described in fig. 1. The exhaust unit 280 for exhausting the ambient gas in the processing chamber 201 includes an exhaust pipe 281 communicating with the processing space 205. The exhaust pipe 281 is provided with an APC (automatic pressure controller) 282 as a pressure controller for controlling the pressure in the processing space 205 to a predetermined pressure, and a pressure detecting unit 283 for measuring the pressure in the processing space 205. The APC282 includes a valve body (not shown) whose opening degree can be adjusted, and adjusts the conduction of the exhaust pipe 281 in accordance with an instruction from the controller 400 described later. In addition, in the exhaust pipe 281, a valve 284 is provided on the upstream side of the APC 282. The exhaust pipe 281, the valve 284, the APC282, and the pressure detection unit 283 are collectively referred to as an exhaust unit 280.
A pump 285 is provided downstream of the exhaust pipe 281. The pump 285 exhausts the ambient gas in the processing chamber 201 through the exhaust pipe 281.
Next, the electromagnetic wave supply unit 290 will be described.
A window 291 is provided in a side wall of the upper container 202 a. Further, electromagnetic wave supply structure 292 is fixed to the side wall of upper container 202 so as to be adjacent to window 291. The electromagnetic wave supply structure 292 is connected to an electromagnetic wave supply control unit 294.
The window 291 is made of, for example, quartz, and is configured to maintain the atmosphere in the container 202 airtight. The center position of the window 291 in the height direction is set to the same height as the substrate mounting surface 211. More preferably, the height is set to be the same as the surface of the substrate 100.
The electromagnetic wave supply structure 292 has a performance of irradiating electromagnetic waves, and is provided with a directional lamp 293 for irradiating ultraviolet light, for example. The directional lamp 293 is configured to be capable of irradiating electromagnetic waves in a desired direction. The irradiation surface of the directional lamp 293 faces the window 291. The center position in the height direction of the irradiation surface of the directional lamp 293 is set to the same height as the height of the substrate mounting surface. More preferably, it is disposed at a position slightly higher than the surface of the substrate 100. By setting the position to a slightly higher position, the electromagnetic wave can be irradiated to the surface 103 of the substrate 100 shown in fig. 5 as will be described later.
The electromagnetic wave supply control unit 294 controls the directional lamp 293 in accordance with an instruction from the controller 400 described later. The electromagnetic wave emitted from the directional lamp 293 is emitted from the side substrate 100 through the window 291.
As will be described later, the electromagnetic wave to be supplied is preferably set to a wavelength longer than the length of the width L of the extremely fine groove 102 formed in the substrate 100. Thus, the electromagnetic wave does not bypass the groove 102, and the inside of the groove 102 is not processed by the electromagnetic wave. For example, ultraviolet light having a wavelength of 200nm to 400nm is used for the treatment in the present apparatus. In addition, as long as the wavelength is longer than the length of the width L, electromagnetic waves generated by an excimer lamp (a lamp using Ar or ArF), a mercury lamp, or the like may be used without being limited to ultraviolet light.
Next, the controller 400 is explained.
The substrate processing apparatus 200 includes a controller 400 that controls operations of the respective parts of the substrate processing apparatus 200. As shown in fig. 3, the controller 400 includes at least a computing unit (CPU)401, a temporary storage unit 402, a storage unit 403, and a transmission/reception unit 404. The controller 400 is connected to each component of the substrate processing apparatus 200 via the transceiver 404, calls a program and a recipe from the storage 403 in accordance with instructions from a host controller or a user, and controls the operation of each component in accordance with the contents thereof. The controller 400 may be a dedicated computer or a general-purpose computer. For example, the controller 400 of the present embodiment can be configured by preparing an external storage device (e.g., a magnetic disk such as a magnetic tape, a flexible disk, or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, a USB memory (USB flash drive), or a semiconductor memory such as a memory card) 412 storing the program, and installing the program in a general-purpose computer using the external storage device 412. The method for supplying the program to the computer is not limited to the case of supplying the program via the external storage device 412. For example, a communication means such as the internet or a dedicated line may be used, or the program may be supplied without passing through the external storage device 412 by receiving information from the host device 420 via the transmission/reception unit 411. The controller 400 may be instructed using an input device 413 such as a keyboard or a touch panel.
The storage unit 402 and the external storage device 412 are configured as computer-readable recording media. Hereinafter, they are simply collectively referred to as recording media. Note that when the term "recording medium" is used in this specification, the storage unit 402 alone, the external storage device 412 alone, or both of them may be included.
(substrate treating step)
A substrate processing process using the substrate processing apparatus 200 will be described with reference to fig. 4. In the following description, the controller 400 controls the operations of the respective parts constituting the substrate processing apparatus 200.
The substrate carry-in process will be described. In fig. 4, the description of this step is omitted. In the substrate processing apparatus 200, the lift-up pin 207 is inserted through the through hole 214 of the substrate mounting table 212 by lowering the substrate mounting table 212 to the conveyance position (position) of the substrate 100. Subsequently, the gate valve 149 is opened to communicate the transfer space 206 with a vacuum transfer chamber (not shown). Then, the substrate 100 is carried from the transfer chamber into the transfer space 206 by a wafer transfer machine (not shown), and the substrate 100 is transferred onto the lift pins 207. Thereby, the substrate 100 is supported in a horizontal posture by the lift-up pins 207 protruding from the surface of the substrate mounting table 212.
As shown in fig. 5, a plurality of pillars 101 and a groove 102 having a very small width and a large aspect ratio formed between the pillars 101 are formed on a substrate 100 to be carried in. In the substrate processing step, a film is not formed in the groove 102, but selectively formed on the surface 103 around each of the pillars 101.
When the substrate 100 is loaded into the chamber 202, the wafer transfer machine is evacuated to the outside of the chamber 202, and the gate valve 149 is closed to seal the inside of the chamber 202. Then, the substrate 100 is placed on the substrate placement surface 211 by raising the substrate placement table 212, and the substrate 100 is raised to a processing position (substrate processing position) in the processing space 205 by raising the substrate placement table 212.
After the substrate 100 is carried into the transfer space 206, the valve 284 is opened to communicate the processing space 205 and the APC 282. The APC282 adjusts the conductance of the exhaust pipe 281 to control the flow rate of the exhaust gas from the pump 285 to the processing space 205, thereby maintaining the processing space 205 at a predetermined pressure (e.g., 10 degrees f)-5～10-1High vacuum of Pa).
When the substrate 100 is placed on the substrate placing table 212, power is supplied to the heater 213, and the surface of the substrate 100 is controlled to have a predetermined temperature. The temperature of the substrate 100 is, for example, room temperature or higher and 800 ℃ or lower, preferably room temperature or higher and 500 ℃ or lower.
After raising the temperature of the substrate 100 to the substrate processing temperature, the following substrate processing is performed with the heat processing while maintaining the substrate 100 at a predetermined temperature. That is, the process gas is supplied from each gas supply pipe into the chamber 202 to process the substrate 100.
Hereinafter, an example will be described in which TDMAT is used as the first gas and NH is used3The gas acts as a second process gas to selectively form a protective film on the surface 103 of the substrate 100. Here, a cross is madeThe supply process is repeated by alternately supplying different process gases.
Next, the first gas supplying step S202 will be described. When the substrate mounting table 212 is moved to the wafer processing position as shown in fig. 1, the ambient gas is exhausted from the processing chamber 201 through the exhaust pipe 281, and the pressure in the processing chamber 201 is adjusted. The temperature of the substrate 100 is heated to a predetermined temperature, for example, 400 to 500 ℃, while adjusting the pressure to a predetermined pressure.
Next, the operation of the first gas supply unit 240 will be described.
In the first gas supply part 240, the valve 244 is opened, and the flow rate of the first gas is adjusted by the MFC 243. By such an operation, the first gas, for example, TDMAT gas, which is a gas containing titanium, is supplied from the first gas supply pipe 241 to the process chamber 201. The supplied gas containing titanium is decomposed to form a titanium-containing layer on the substrate 100. In this case, as shown in fig. 6, the component 104 of the gas containing titanium is mostly attached to the substrate surface 103, but a part of it enters the groove 102. When a predetermined time has elapsed, the valve 244 is closed to stop the supply of the titanium-containing gas.
Next, the first purge step S204 is explained. After the supply of the titanium-containing gas is stopped, a purge gas is supplied from the purge gas supply pipe 261 to purge the atmosphere in the process chamber 201. Here, the valve 264 is set to open. The component 104 of the gas containing titanium which does not adhere to the substrate 100 in the first gas supply step S202 is removed from the process chamber 201 through the exhaust pipe 281 by the pump 285. At this time, the first gas component entering the tank 102 is also removed, but it is difficult to remove all.
In the first purge step S204, a large amount of purge gas is supplied to remove the titanium-containing gas that does not adhere to the substrate 100 or remain in the process chamber 201 or the head buffer chamber 232, thereby improving the exhaust efficiency. If the predetermined time has elapsed, the valve 264 is closed, and the purge process is ended.
Next, the second gas supply step S206 will be described. If the purging of the process chamber 201 is completed, the second gas supply step S206 is performed. In the second gas supply part 250, the valve is opened254, NH as a second gas is supplied into the processing chamber 201 through the showerhead 2303A gas. At this time, the MFC253 is adjusted so that NH3The flow rate of the gas becomes a predetermined flow rate. NH (NH)3The supply flow rate of the gas is, for example, 1000 to 10000 sccm.
And NH3In parallel with the supply of the gas, the electromagnetic wave is irradiated from the electromagnetic wave supply unit 290 to the substrate 100. The irradiated electromagnetic wave reaches the substrate 100 via the window 291. Since the center position in the height direction of the irradiation surface of the directional lamp 293 is the same as the center position in the height direction of the window 290, the irradiated electromagnetic wave is not supplied to the groove 102 but supplied to the surface 103 of the substrate 100 as indicated by an arrow 105 in fig. 6.
The electromagnetic wave cuts off and decomposes the bonds between the titanium-containing gas components 104 on the substrate surface 103. NH decomposed by heat is supplied to the cut portion3The component of the titanium-containing gas, which has been cut off, is bonded to the component of ammonia (specifically, nitrogen component), thereby forming a layer having a high degree of bonding. In parallel, the remaining component of the titanium-containing gas (for example, chlorine (Cl)) reacts with the hydrogen component of ammonia gas to produce HCl gas and NH4And Cl gas. These gases are exhausted from the exhaust section.
At this time, since the electromagnetic wave is irradiated from the side surface of the substrate 100, it is difficult to enter the groove 102 as shown in fig. 6. Therefore, since the components of the gas containing titanium remaining in the grooves 102 are not treated by electromagnetic waves, a film is not formed in the grooves 102, and a film can be selectively formed on the substrate surface 103.
It is preferable that the wavelength of the electromagnetic wave to be used is larger than the width L of the groove 102. If the wavelength is large, the light does not bypass the groove 102, and therefore the processing in the groove 102 can be suppressed more reliably.
At the beginning of NH3After a predetermined time has elapsed after the supply of the gas, the valve 254 is closed to stop NH3And (3) supplying gas. NH (NH)3The gas is supplied for 2 to 20 seconds, for example.
Next, the second purge step S208 will be described. At the stop of NH3After the supply of the gas, a second purge step S208 is performed, which is the same as the first purge step S204. Second blowThe operation of each part in the sweeping process S208 is the same as that in the first sweeping process S204, and therefore, the description thereof is omitted.
Next, the determination step S210 is explained. The controller 400 determines whether or not the cycle is performed a predetermined number of times (n cycles) with the first gas supply step S202, the first purge step S204, the second gas supply step S206, and the second purge step S208 as one cycle. After a predetermined number of cycles, a TiN layer having a desired thickness is formed on the substrate 100. When the processing is performed a predetermined number of times (in the case of yes at S210), the processing shown in fig. 4 is ended. As described above, the protective film is selectively formed on the surface 103.
More preferably, the substrate mounting table 210 is rotated at least in the second gas supply step. By rotating the substrate 100 together with the substrate mounting base 210, electromagnetic waves can be supplied more uniformly into the surface of the substrate 100.
Next, a substrate carrying-out process is described. If a TiN layer having a desired film thickness is formed, the substrate mounting table 212 is lowered, and the substrate 100 is moved to the transfer position. Then, the valve 149 is opened, and the substrate 100 is carried out of the chamber 202 by using a robot arm (not shown).
Further, although an example of irradiating ultraviolet light is described here, microwaves may be used. In this case, the film is processed by applying microwaves to the layer (or film) containing the component of the gas containing titanium on the substrate surface and heating the layer (or film).
Here, the component of the gas containing titanium on the substrate 100 is processed by the electromagnetic wave, but the processing is not limited to this, and the gas may be excited by irradiating the supplied gas with the electromagnetic wave. In this case, the energy is adjusted to the extent that the reaction ends at the substrate surface so that the excited gas does not bypass into the groove 102.
(second embodiment)
Next, a second embodiment is explained with reference to the drawings.
The structure of the substrate processing apparatus according to the present embodiment will be described mainly with reference to fig. 7 and 8. Fig. 7 is a schematic cross-sectional view of a substrate processing apparatus 300 according to the present embodiment. Fig. 8 is a schematic vertical sectional view of the substrate processing apparatus 300 according to the present embodiment, and is a sectional view taken along line α - α' of the chamber shown in fig. 7. Further, α - α 'is a line from α through the center of the chamber 302 toward α'.
(substrate processing apparatus)
A specific structure of the substrate processing apparatus 300 will be described. Note that the structure given the same reference numeral as in the first embodiment has the same function as in the first embodiment, and the description thereof is appropriately omitted. The substrate processing apparatus 300 is controlled by the controller 400.
As shown in fig. 7 and 8, the substrate processing apparatus 300 is mainly configured by a chamber 302 which is a cylindrical airtight container. Inside the chamber 302, a process chamber 301 for processing the substrate 100 is formed. The chamber 302 is connected to the gate valve 305, and the substrate 100 is carried in and out through the gate valve 305.
The process chamber 301 has a process field 306 for supplying a process gas and a purge field 307 for supplying a purge gas. Here, the process regions 306 and the purge regions 307 are alternately arranged in a circumferential manner. For example, the first process region 306a, the first purge region 307a, the second process region 306b, and the second purge region 307b are arranged in this order. As will be described later, the first gas is supplied into the first process field 306a, the second gas is supplied into the second process field 306b, and the inert gas is supplied into the first purge field 307a and the second purge field 307 b. Thus, a predetermined process is performed on the substrate 100 in accordance with the gas supplied into each region. The process field 306a is also referred to as a first domain, the process field 306b is also referred to as a second domain, and the first purge field 307a and the second purge field 307b are also referred to as purge domains.
The purge zone 307 is a zone that spatially separates the first process zone 306a from the second process zone 306 b. The top plate 308 of the purge region 307 is lower than the top plate 309 of the process region 306. A ceiling plate 308a is provided in the first purge region 307a, and a ceiling plate 308b is provided in the second purge region 307 b. The pressure in the space of the purge region 307 is increased by lowering each ceiling. The adjacent process regions 306 are partitioned by supplying a purge gas to the space. In addition, the purge gas also functions to remove excess gas on the substrate 100.
A substrate mounting plate 317 is provided at the center of the chamber 302, and the substrate mounting plate 317 has a rotation axis at the center of the chamber 302 and is configured to be rotatable.
The substrate mounting plate 317 is configured to be able to arrange a plurality of (for example, 6) substrates 100 on the same plane and on the same circumference along the rotation direction in the chamber 302. The "same surface" described here is not limited to a completely same surface, and when the substrate mounting plate 317 is viewed from above, the plurality of substrates 100 are preferably arranged so as not to overlap with each other.
A concave portion 318 is provided at a supporting position of the substrate 100 on the surface of the substrate mounting plate 317. The same number of recesses 318 as the number of substrates 100 to be processed are arranged at equal intervals (for example, at intervals of 60 °) at positions concentric with the center of the substrate mounting plate 317. Note that, in fig. 7, illustration is omitted for convenience of description.
Each concave portion 318 has, for example, a circular shape when viewed from the top surface of the substrate mounting plate 317 and a concave shape when viewed from the side surface. The diameter of the recess 318 is preferably slightly larger than the diameter of the substrate 100. A substrate mounting surface 319 is provided at the bottom of the concave portion 318, and the substrate 100 can be mounted on the substrate mounting surface 319 by mounting the substrate 100 in the concave portion 318.
The substrate mounting plate 317 is fixed to the core 321. The core 321 is provided at the center of the substrate mounting plate 317, and has a function of fixing the substrate mounting plate 317. A shaft 322 is disposed below the core 321. The shaft 322 supports the core 321.
The lower portion of the shaft 322 penetrates a hole 323 provided in the bottom of the container 302, and is covered with the airtight container 304 outside the chamber 302. Further, as in the first embodiment, the lifting/lowering rotation portion 218 is provided at the lower end of the shaft 322. In the case where the shaft 322 is not moved up and down, the lifting and lowering rotation unit 218 is simply referred to as a rotation unit 218. The elevation rotation unit 218 is configured to rotate and elevate the substrate mounting plate 317 in accordance with an instruction from the controller 400.
A heater unit 381 incorporating a heater 380 as a heating portion is disposed below the substrate mounting plate 317. The heater 380 heats each substrate 100 mounted on the substrate mounting plate 317. The heater 380 is arranged in a circumferential shape along the shape of the chamber 302.
The heater 380 is connected to the heater control section 387. The heater 380 is electrically connected to the controller 400, and controls power supply to the heater 380 according to an instruction from the controller 400, thereby performing temperature control.
An exhaust structure 386 is disposed on the outer periphery of the substrate mounting plate 317. The exhaust structure 386 includes an exhaust groove 388 and an exhaust buffer space 389. The exhaust groove 388 and the exhaust buffer space 389 are formed in a circumferential shape along the shape of the chamber 302.
An exhaust port 391 and an exhaust port 392 are provided at the bottom of the exhaust structure 386. The exhaust port 391 mainly exhausts the first gas supplied to the processing space 306a and the purge gas supplied from the upstream side thereof. The exhaust port 392 primarily exhausts the second gas supplied to the processing space 306b and the purge gas supplied from the upstream side thereof. Each gas is discharged from the gas discharge port 391 and the gas discharge port 392 through the gas discharge groove 388 and the gas discharge buffer space 389.
Next, the gas supply unit will be described. The gas supply unit is the same as that of the first embodiment. As shown in fig. 7, the chamber 302 includes nozzles 345, 355, 365, and 366. A in fig. 7 is connected to a in fig. 2 (a). That is, the nozzle 345 is connected to the supply pipe 241. B in fig. 7 is connected to B in fig. 2 (B). That is, the nozzle 355 is connected to the pipe 251. C in fig. 7 is connected to C in fig. 2 (C). That is, the nozzles 365, 366 are connected to the supply pipe 261, respectively.
As shown in fig. 7, an exhaust port 391 and an exhaust port 392 are provided in the chamber 302. An exhaust pipe 334a as a part of the first exhaust portion 334 communicating with the exhaust port 391 is provided. The exhaust pipe 334a is connected to a vacuum pump 334b as a vacuum evacuation device via a valve 334d as an on-off valve and an APC (automatic pressure controller) valve 334c as a pressure regulator (pressure adjustment unit), and is configured to be capable of vacuum evacuation so that the pressure in the processing chamber 301 becomes a predetermined pressure (vacuum degree).
The exhaust pipe 334a, the valve 334d, and the APC valve 334c are collectively referred to as a first exhaust portion 334. The vacuum pump 334b may be included in the first exhaust unit 334.
In addition, a second exhaust portion 335 is provided in communication with the exhaust port 392. The exhaust port 392 is disposed on the downstream side in the rotation direction of the processing region 306 b. The second gas and the inert gas are mainly discharged.
An exhaust pipe 335a is provided as a part of the second exhaust part 335 in communication with the exhaust port 392. The exhaust pipe 335a is connected to a vacuum pump 335b as a vacuum exhaust device via a valve 335d as an on-off valve and an APC valve 335c as a pressure regulator (pressure regulator), and is configured to be capable of performing vacuum exhaust so that the pressure in the processing chamber 301 becomes a predetermined pressure (vacuum degree).
The exhaust pipe 335a, the valve 335d, and the APC valve 335c are collectively referred to as a second exhaust part 335. The vacuum pump 335b may be included in the second exhaust unit 335.
Next, the electromagnetic wave supply unit 290 will be described. The window 291 is disposed adjacent to a wall of the chamber 302, the second processing region 306 b. If considered in terms of the direction of rotation, is disposed on the upstream side of the direction of rotation of the nozzle 255, on the downstream side of the first purge region 307 a.
The center position in the height direction of the window 291 is set to the same height as the height of the substrate mounting plate 317. The center position in the height direction of the illumination surface of the directional lamp 293 provided in the electromagnetic wave supply structure 292 is arranged at a position slightly higher than the surface of the substrate 100.
The electromagnetic wave irradiated from the electromagnetic wave supply structure 292 is irradiated to a region on the upstream side in the rotation direction of the nozzle 355 in the second region 306 b. Therefore, before the second gas is supplied, the electromagnetic wave is irradiated to the surface 103 of the substrate 100 moving from the first purge region 307a to perform the process.
Since the electromagnetic wave is irradiated before the second gas is supplied, the electromagnetic wave can be reliably irradiated to the surface 103 without colliding with the gas.
When the electromagnetic wave is not applied to the layer on the substrate 100 but applied to the gas supplied from the nozzle 355, the window 291 is preferably provided on the downstream side in the rotation direction of the nozzle 355. By being provided on the downstream side, electromagnetic waves can be supplied to the downstream region of the nozzle 355, and thus the second gas can be excited reliably.
(substrate treating step)
Next, a substrate processing step according to a second embodiment will be described with reference to fig. 9. Fig. 9 is a flowchart showing a substrate processing flow according to the present embodiment. In the following description, the controller 400 controls the operations of the respective components of the substrate processing apparatus 300.
Here, an example will be described in which a titanium nitride (TiN) film is formed as a thin film on the substrate 100 using a titanium-containing gas as a first gas and ammonia gas as a second gas.
The substrate carrying-in/placing process will be described. Fig. 9 is omitted from illustration. The substrate mounting plate 317 is rotated to move the recess 318 to a position facing the gate valve 305. Subsequently, the lift-up pin (not shown) is raised to penetrate through the through hole (not shown) of the substrate mounting plate 317. Subsequently, the gate valve 305 is opened to communicate the chamber 302 with a vacuum transfer chamber (not shown). Then, the substrate 100 is transferred from the transfer chamber to the lift pins by a transfer machine (not shown), and the lift pins are lowered. Thereby, the substrate 100 is supported by the recess 318 in a horizontal posture.
As shown in fig. 5, a plurality of pillars 101 and a groove 102 having a very small width and a large aspect ratio formed between the pillars 101 are formed in a substrate 100 to be carried in. In the substrate processing step, a film is not formed in the groove 102, but selectively formed on the surface 103 around each of the pillars 101.
The substrate mounting plate 317 is rotated so that the recess 318 on which the substrate 100 is not mounted faces the gate valve 305. Then, the substrate is similarly placed in the recess 318. And the process is repeated until the substrate 100 is placed in all the recesses 318.
When the substrate 100 is carried into the concave portion 318, the substrate transfer machine is retracted outside the substrate processing apparatus 300, and the gate valve 305 is closed to seal the chamber 302.
When the substrate 100 is placed on the substrate placing plate 317, electric power is supplied to the heater 308 in advance, and the surface of the substrate 100 is controlled to have a predetermined temperature. The temperature of the substrate 100 is, for example, 400 ℃ to 500 ℃. The heater 380 is constantly energized at least from the substrate loading/mounting step to the end of the substrate unloading step described later.
The substrate mounting plate rotation starting step S310 will be described. When the substrate 100 is placed in each recess 318, the rotating section 324 rotates the substrate placing plate 317 in the R direction. By rotating the substrate mounting plate 317, the substrate 100 moves in the order of the first process area 306a, the first purge area 307a, the second process area 306b, and the second purge area 307 b.
The gas supply start step S320 will be described. When the substrate 100 is heated to a desired temperature and the substrate mounting plate 317 is rotated at a desired rotation speed, the valve 244 is opened to start supplying the gas containing titanium into the first processing region 306 a. In parallel with this, the valve 254 is opened to supply NH into the second processing region 306b3A gas.
At this time, the MFC243 is adjusted so that the flow rate of the titanium-containing gas becomes a predetermined flow rate. The flow rate of the titanium-containing gas is, for example, 50sccm or more and 500sccm or less.
In addition, MFC253 is adjusted so that NH3The flow rate of the gas is a predetermined flow rate. Furthermore, NH3The gas supply flow rate is, for example, 100sccm or more and 5000sccm or less.
After the substrate loading/mounting step S310, the inside of the processing chamber 301 is continuously exhausted by the first exhaust unit 334 and the second exhaust unit 335, and N as a purge gas is supplied from the inert gas supply unit 260 into the first purge region 307a and the second purge region 307b2A gas.
The film forming step S330 will be described. Here, the basic flow of the film forming step S330 will be described, and details will be described later. In the film forming step S330, each substrate 100 has a titanium-containing layer formed in the first processing region 360a, and further has a titanium-containing layer and NH in the rotated second processing region 306b3The gas reacts to form a titanium-containing film on the substrate 100. The substrate mounting part is rotated a predetermined number of times to obtain a desired film thickness.
The gas supply stopping step S340 will be described. After the substrate mounting portion is rotated a predetermined number of times, the valves 244 and 254 are closed to stop the supply of the titanium-containing gas to the first processing region 306aSupply of NH3The supply of gas to the second processing region 306 b.
The substrate mounting plate rotation stopping step S350 will be described. After the gas supply stopping step S340, the rotation of the substrate mounting plate 317 is stopped.
The substrate carrying-out step will be described. Illustration is omitted in fig. 9. The substrate mounting plate is rotated so that the substrate 100 to be carried out is moved to a position facing the gate valve 205. Then, the substrate is carried out in a reverse manner to the carrying-in of the substrate. These operations are repeated to carry out all the substrates 100.
Next, the film forming step S330 will be described in detail. During the film forming step S330, the plurality of substrates 100 are sequentially passed through the first process area 306a, the first purge area 307a, the second process area 306b, and the second purge area 307b by the rotation of the substrate mounting plate 317.
The film forming step S330 is the same as the flow of fig. 2 in detail. The following description will mainly explain one substrate 100 among the plurality of substrates 100 mounted on the substrate mounting portion 317 from the first gas supply step S202 to the second purge step S208. Hereinafter, the following description will focus on the differences.
The first gas supplying step S202 of the present embodiment will be described. In the first gas supplying step S202, a gas containing titanium is supplied to the substrate 100 when the substrate 100 passes through the first processing region 306 a. The supplied gas containing titanium is decomposed to form a titanium-containing layer on the substrate 100. In this case, as shown in fig. 6, the component 104 of the gas containing titanium is mostly attached to the substrate surface 103, but a part thereof enters the groove 102.
The first purge step S204 of the present embodiment will be described. After passing through the first processing region 306a, the substrate 100 moves to the first purge region 307 a. When the substrate 100 passes through the first purge region 307a, the component 104 of the titanium-containing gas that does not form a strong bond on the substrate 100 in the first process region 306a is removed from the substrate 100 by the inert gas. At this time, the first gas component entering the tank 102 is also removed, but it is difficult to remove all.
The second gas supply step S206 will be described. After passing through the first purge region 307a, the substrate 100 moves to the second process region 306 b. If the substrate 100 passes upstream of the nozzle 355, the electromagnetic wave is irradiated from the electromagnetic wave supply part 290 to the substrate 100. The irradiated electromagnetic wave reaches the substrate 100 via the window 291. Since the center position in the height direction of the irradiation surface of the directional lamp 293 is the same as the center position in the height direction of the window 290, the irradiated electromagnetic wave is not supplied to the groove 102 but supplied to the surface 103 of the substrate 100 as indicated by a broken-line arrow 105 in fig. 6.
As in the first embodiment, the electromagnetic wave cuts off and decomposes the bonds between the titanium-containing gas components on the substrate surface 103. NH decomposed by heat is supplied to the cut portion3Gas, composition of the cut-off titanium-containing gas and NH3The components of the gas combine to form a layer with a high degree of combination.
At this time, since the electromagnetic wave is irradiated from the side surface of the substrate 100, it is difficult to enter the groove 102 as shown in fig. 6. Therefore, the components of the titanium-containing gas remaining in the tank 102 are not treated by the electromagnetic wave. Therefore, a film can be selectively formed on the substrate surface 103 without forming a film in the groove 102.
The second purge process S208 will be described. After the substrate 100 passes through the second process zone 306b, it moves to the second purge zone 307 b. HCl, NH desorbed from a layer on the substrate 100 in the second process zone 306b is removed from the substrate 100 by the inert gas as the substrate 100 passes through the second purge zone 307b4CL gas, residual gas, etc.
Thus, at least two kinds of second gases that react with each other are sequentially supplied to the substrate. The first gas supply step S202, the first purge step S204, the second gas supply step S206, and the second purge step S208 described above are performed in one cycle.
The determination step S210 will be described. The controller 400 determines whether the above one cycle is performed a predetermined number of times. Specifically, the controller 400 counts the number of rotations of the substrate mounting plate 317.
When the above-described one cycle is not performed a predetermined number of times (no in S210), the substrate mounting plate 317 is further rotated continuously, and the cycle including the first gas supply step S202, the first purge step S204, the second gas supply step S206, and the second purge step S208 is repeated. By stacking in this manner, a thin film is formed.
When the above one cycle is performed a predetermined number of times (yes in S210), the film forming step S330 is ended. By performing the above one cycle a predetermined number of times, a thin film having a predetermined thickness is formed. As described above, the protective film is selectively formed on the surface 103.
However, as described above, each domain is affected by the same heater. Therefore, it is difficult to separately process the first gas and the second gas at different temperatures. In contrast, in the case of the present embodiment, since electromagnetic waves can be supplied to the second domain independently of the other domains, energy can be filled. That is, the temperature of the substrate 100 can be independently raised. It is therefore expedient if the first gas and the second gas are treated with different energies, for example if the first gas and the second gas are treated at different temperatures.
(third embodiment)
Next, a third embodiment will be described. The substrate mounting table of the third embodiment is different from that of the first embodiment. The other structure is the same as that of the first embodiment. Hereinafter, a difference will be mainly described with reference to fig. 10. In addition, the broken line arrows indicate electromagnetic waves irradiated from the electromagnetic wave supply structure 292.
First, the feared matters of the embodiment of fig. 1 will be described. In the case of the first embodiment, the electromagnetic wave irradiated from the electromagnetic wave supply structure 292 is irradiated to the surface of the substrate, but depending on the mounting position of the directional lamp 293, the electromagnetic wave may not reach the center of the substrate 100. That is, the processing state of the substrate 100 may be uneven.
When the installer mounts the directional lamp 293, the electromagnetic wave is set so as to reach the center of the substrate 100, but it is difficult to achieve this due to mounting accuracy and the like. For example, due to mounting accuracy, the electromagnetic wave may be slightly upward irradiated, and as a result, the center of the substrate 100 may not be aligned.
Therefore, in the present embodiment, the substrate mounting table 212 is tilted, and the substrate mounting table 212 is rotated. By inclining the lamp, the center axis of the irradiation surface of the directional lamp 293 can intersect the substrate mounting surface 211. Further, since the substrate mounting surface 211 is rotated in an inclined state, the substrate 100 mounted thereon can be rotated in an inclined supported state. Further, the substrate mounting table 212 may be provided with a recess 212a, and the substrate 100 may be mounted in the recess 212a so that the position of the substrate 100 does not deviate during rotation.
Thus, even if the directional lamp 293 is mounted with low accuracy and the electromagnetic wave is directed upward to some extent, the electromagnetic wave can reach the center of the substrate 100. Further, since the substrate 100 is controlled to rotate and the end of the substrate 100 is brought close to the electromagnetic wave supply unit 292, the electromagnetic wave can reach the end of the substrate 100.
(fourth embodiment)
Next, a fourth embodiment will be described. The substrate mounting plate 317 of the fourth embodiment is different from that of the second embodiment. The other structure is the same as that of the first embodiment. Hereinafter, a difference will be mainly described with reference to fig. 11. In addition, the broken line arrows indicate electromagnetic waves irradiated from the electromagnetic wave supply structure 292.
First, the feared matters of the second embodiment will be described. Here, the electromagnetic wave irradiated from the electromagnetic wave supply structure 292 is irradiated to the surface of the substrate, but depending on the mounting position of the directional lamp 293, the electromagnetic wave may not reach the center of the substrate 100. This is due to the problem of mounting accuracy, as in the first embodiment.
Therefore, in the present embodiment, the substrate mounting plate 317 is tilted and the substrate mounting plate 317 is rotated. The substrate mounting plate 317 is configured to be inclined downward from the center to the end.
In this case, since the concave portion 318 is also inclined, the substrate 100 placed thereon is rotated while being supported obliquely. Therefore, as in the third embodiment, even if the directional lamp 293 is mounted with low accuracy and the electromagnetic wave is directed upward to some extent, the electromagnetic wave can reach the center of the substrate 100. Further, since the substrates 100 are revolved, the irradiation amount of the electromagnetic wave can be made uniform among the plurality of substrates 100. Therefore, the processing between the substrates 100 can be performed uniformly.
(fifth embodiment)
Next, a fifth embodiment will be described. The fifth embodiment is a modification of the fourth embodiment, and the substrate mounting plate 317 is inclined differently. The other structure is the same as that of the third embodiment. Hereinafter, a difference will be mainly described with reference to fig. 12.
In the present embodiment, the substrate mounting plate 317 is tilted, and the substrate mounting plate 317 is rotated. The substrate mounting plate 317 is inclined upward from the center to the end.
In this case, since the concave portion 318 is also inclined, the substrate 100 placed thereon is rotated while being supported obliquely. Therefore, as in the fourth embodiment, even if the directional lamp 293 is mounted with low accuracy and the electromagnetic wave is directed upward to some extent, the electromagnetic wave can reach the center of the substrate 100. Further, since the outer peripheral side of the concave portion 318 is directed upward, even if the substrate 100 is revolved and centrifugal force acts, the substrate 100 does not collide with the outer periphery of the concave portion 318. Therefore, the substrate 100 does not come off from the recess.
The embodiments of the present invention have been described above. In the above description, a case where a gas containing titanium is used as the first gas is described, but the first gas is not limited thereto, and a gas containing other metal or a gas containing silicon may be used depending on the contents of the treatment. Further, a gas containing nitrogen is used as the second gas, but the second gas is not limited thereto, and depending on the contents of the treatment, a gas containing oxygen or a gas containing hydrogen may be used.
In addition, N is used as inert gas2The gas is exemplified, but the gas is not limited thereto as long as it is a gas that does not react with the process gas. For example, an inert gas such as helium (He) gas, neon (Ne) gas, or argon (Ar) gas may be used.
In the above description, the terms "the same" are used, but the terms "the same" may be substantially the same, and include, for example, a state slightly higher or lower than the substrate mounting surface when the substrate mounting surface has the same height.

Claims (20)

1.一种基板处理装置，其特征在于，1. A substrate processing apparatus, characterized in that: 上述基板处理装置具备：The above-mentioned substrate processing apparatus includes: 基板载置部，其被装备在处理室内，且具有载置基板的基板载置面，该基板具有构成多个槽的柱；a substrate placement portion, which is provided in a processing chamber and has a substrate placement surface on which a substrate is placed, the substrate having columns forming a plurality of grooves; 气体供给部，其向上述处理室供给处理气体；a gas supply unit that supplies processing gas to the processing chamber; 排气部，其从上述处理室排出环境气；an exhaust part that exhausts ambient air from the above-mentioned processing chamber; 电磁波供给部，其以不对上述槽之中进行处理而对上述基板的表面进行处理的方式从上述基板的侧方供给电磁波。The electromagnetic wave supply part supplies electromagnetic waves from the side of the said board|substrate so that the surface of the said board|substrate may be processed without processing in the said groove|channel. 2.根据权利要求1所述的基板处理装置，其特征在于，2. The substrate processing apparatus according to claim 1, wherein 从上述电磁波供给部照射的电磁波的波长构成为比上述槽的宽度的长度长。The wavelength of the electromagnetic wave irradiated from the said electromagnetic wave supply part is comprised so that it may become longer than the length of the width|variety of the said groove. 3.根据权利要求2所述的基板处理装置，其特征在于，3. The substrate processing apparatus according to claim 2, wherein 上述电磁波供给部具备指向性灯，上述指向性灯的照射面中心的高度被设定为，与在向上述处理室供给上述处理气体的期间配置的上述基板载置面的高度相同的高度。The electromagnetic wave supply unit includes a directional lamp, and the height of the center of the irradiated surface of the directional lamp is set to be the same height as the height of the substrate mounting surface disposed while the processing gas is being supplied to the processing chamber. 4.根据权利要求3所述的基板处理装置，其特征在于，4. The substrate processing apparatus according to claim 3, wherein 以使上述指向性灯的照射面的中心轴与上述基板载置面交叉的方式配置上述指向性灯。The said directional lamp is arrange|positioned so that the central axis of the irradiation surface of the said directional lamp may cross the said board|substrate mounting surface. 5.根据权利要求4所述的基板处理装置，其特征在于，5. The substrate processing apparatus according to claim 4, wherein 上述气体供给部具备：第一气体供给部，其供给第一气体；第二气体供给部，其供给与上述第一气体反应的第二气体；以及吹扫气体供给部，其供给吹扫气体，The gas supply unit includes: a first gas supply unit that supplies a first gas; a second gas supply unit that supplies a second gas that reacts with the first gas; and a purge gas supply unit that supplies a purge gas, 上述处理室具有被供给上述第一气体的第一域、被供给上述第二气体的第二域、以及被供给上述吹扫气体的吹扫域，The processing chamber has a first region to which the first gas is supplied, a second region to which the second gas is supplied, and a purge region to which the purge gas is supplied, 多个上述基板载置面呈圆周状地配置于上述基板载置部，上述基板载置部进行旋转，由此多个上述基板通过各个上述域。A plurality of the substrate placement surfaces are circumferentially arranged on the substrate placement portion, and the substrate placement portion rotates so that the plurality of substrates pass through each of the domains. 6.根据权利要求1所述的基板处理装置，其特征在于，6. The substrate processing apparatus according to claim 1, wherein 上述电磁波供给部具备指向性灯，上述指向性灯的照射面中心的高度被设定为，与在向上述处理室供给上述处理气体的期间配置的上述基板载置面的高度相同的高度。The electromagnetic wave supply unit includes a directional lamp, and the height of the center of the irradiated surface of the directional lamp is set to be the same height as the height of the substrate mounting surface disposed while the processing gas is being supplied to the processing chamber. 7.根据权利要求6所述的基板处理装置，其特征在于，7. The substrate processing apparatus according to claim 6, wherein 以使上述指向性灯的照射面的中心轴与上述基板载置面交叉的方式配置上述指向性灯。The said directional lamp is arrange|positioned so that the central axis of the irradiation surface of the said directional lamp may cross the said board|substrate mounting surface. 8.根据权利要求7所述的基板处理装置，其特征在于，8. The substrate processing apparatus according to claim 7, wherein 上述气体供给部具备：第一气体供给部，其供给第一气体；第二气体供给部，其供给与上述第一气体反应的第二气体；以及吹扫气体供给部，其供给吹扫气体，The gas supply unit includes: a first gas supply unit that supplies a first gas; a second gas supply unit that supplies a second gas that reacts with the first gas; and a purge gas supply unit that supplies a purge gas, 上述处理室具有被供给上述第一气体的第一域、被供给上述第二气体的第二域、以及被供给上述吹扫气体的吹扫域，The processing chamber has a first region to which the first gas is supplied, a second region to which the second gas is supplied, and a purge region to which the purge gas is supplied, 多个上述基板载置面呈圆周状地配置于上述基板载置部，上述基板载置部进行旋转，由此多个上述基板通过各个上述域。A plurality of the substrate placement surfaces are circumferentially arranged on the substrate placement portion, and the substrate placement portion rotates so that the plurality of substrates pass through each of the domains. 9.根据权利要求6所述的基板处理装置，其特征在于，9. The substrate processing apparatus according to claim 6, wherein 上述气体供给部具备：第一气体供给部，其供给第一气体；第二气体供给部，其供给与上述第一气体反应的第二气体；以及吹扫气体供给部，其供给吹扫气体，The gas supply unit includes: a first gas supply unit that supplies a first gas; a second gas supply unit that supplies a second gas that reacts with the first gas; and a purge gas supply unit that supplies a purge gas, 上述处理室具有被供给上述第一气体的第一域、被供给上述第二气体的第二域、以及被供给上述吹扫气体的吹扫域，The processing chamber has a first region to which the first gas is supplied, a second region to which the second gas is supplied, and a purge region to which the purge gas is supplied, 多个上述基板载置面呈圆周状地配置于上述基板载置部，上述基板载置部进行旋转，由此多个上述基板通过各个上述域。A plurality of the substrate placement surfaces are circumferentially arranged on the substrate placement portion, and the substrate placement portion rotates so that the plurality of substrates pass through each of the domains. 10.根据权利要求1所述的基板处理装置，其特征在于，10. The substrate processing apparatus according to claim 1, wherein 上述气体供给部具备：第一气体供给部，其供给第一气体；第二气体供给部，其供给与上述第一气体反应的第二气体；以及吹扫气体供给部，其供给吹扫气体，The gas supply unit includes: a first gas supply unit that supplies a first gas; a second gas supply unit that supplies a second gas that reacts with the first gas; and a purge gas supply unit that supplies a purge gas, 上述处理室具有被供给上述第一气体的第一域、被供给上述第二气体的第二域、以及被供给上述吹扫气体的吹扫域，The processing chamber has a first region to which the first gas is supplied, a second region to which the second gas is supplied, and a purge region to which the purge gas is supplied, 多个上述基板载置面呈圆周状地配置于上述基板载置部，上述基板载置部进行旋转，由此多个上述基板通过各个上述域。A plurality of the substrate placement surfaces are circumferentially arranged on the substrate placement portion, and the substrate placement portion rotates so that the plurality of substrates pass through each of the domains. 11.根据权利要求10所述的基板处理装置，其特征在于，11. The substrate processing apparatus according to claim 10, wherein 上述基板载置部构成为从中心部到端部而向上方倾斜。The said board|substrate mounting part is comprised so that it may incline upwards from a center part to an edge part. 12.根据权利要求11所述的基板处理装置，其特征在于，12. The substrate processing apparatus according to claim 11, wherein 从上述电磁波供给部照射的电磁波构成为，照射到上述第二域中的比从上述第二气体供给部被供给气体的区域靠旋转方向的上游的区域。The electromagnetic wave irradiated from the said electromagnetic wave supply part is comprised so that it may irradiate the area|region upstream of the rotation direction rather than the area|region to which the gas is supplied from the said 2nd gas supply part in the said 2nd field. 13.根据权利要求11所述的基板处理装置，其特征在于，13. The substrate processing apparatus according to claim 11, wherein 从上述电磁波供给部照射的电磁波构成为，照射到上述第二域中的比从上述第二气体供给部被供给气体的区域靠旋转方向的下游的区域。The electromagnetic wave irradiated from the said electromagnetic wave supply part is comprised so that it may irradiate the area|region downstream in a rotation direction rather than the area|region to which gas is supplied from the said 2nd gas supply part in the said 2nd field. 14.根据权利要求10所述的基板处理装置，其特征在于，14. The substrate processing apparatus according to claim 10, wherein 上述基板载置部构成为从中心部到端部而向下方倾斜。The said board|substrate mounting part is comprised so that it may incline downward from a center part to an edge part. 15.根据权利要求14所述的基板处理装置，其特征在于，15. The substrate processing apparatus according to claim 14, wherein 从上述电磁波供给部照射的电磁波构成为，照射到上述第二域中的比从上述第二气体供给部被供给气体的区域靠旋转方向的上游的区域。The electromagnetic wave irradiated from the said electromagnetic wave supply part is comprised so that it may irradiate the area|region upstream of the rotation direction rather than the area|region to which the gas is supplied from the said 2nd gas supply part in the said 2nd field. 16.根据权利要求14所述的基板处理装置，其特征在于，16. The substrate processing apparatus according to claim 14, wherein 从上述电磁波供给部照射的电磁波构成为，照射到上述第二域中的比从上述第二气体供给部被供给气体的区域靠旋转方向的下游的区域。The electromagnetic wave irradiated from the said electromagnetic wave supply part is comprised so that it may irradiate the area|region downstream in a rotation direction rather than the area|region to which gas is supplied from the said 2nd gas supply part in the said 2nd field. 17.根据权利要求10所述的基板处理装置，其特征在于，17. The substrate processing apparatus according to claim 10, wherein 从上述电磁波供给部照射的电磁波构成为，照射到上述第二域中的比从上述第二气体供给部被供给气体的区域靠旋转方向的上游的区域。The electromagnetic wave irradiated from the said electromagnetic wave supply part is comprised so that it may irradiate the area|region upstream of the rotation direction rather than the area|region to which the gas is supplied from the said 2nd gas supply part in the said 2nd field. 18.根据权利要求10所述的基板处理装置，其特征在于，18. The substrate processing apparatus according to claim 10, wherein 从上述电磁波供给部照射的电磁波构成为，照射到上述第二域中的比从上述第二气体供给部被供给气体的区域靠旋转方向的下游的区域。The electromagnetic wave irradiated from the said electromagnetic wave supply part is comprised so that it may irradiate the area|region downstream in a rotation direction rather than the area|region to which gas is supplied from the said 2nd gas supply part in the said 2nd field. 19.一种半导体装置的制造方法，其特征在于，19. A method of manufacturing a semiconductor device, characterized in that: 上述半导体装置的制造方法包括如下工序：The manufacturing method of the above-mentioned semiconductor device includes the following steps: 将具有构成多个槽的柱的基板载置于装备在处理室内且具有基板载置面的基板载置部；以及placing a substrate having columns forming a plurality of grooves on a substrate placing portion equipped in a processing chamber and having a substrate placing surface; and 以不对上述槽之中进行处理而对上述基板的表面进行处理的方式从上述基板的侧方供给电磁波，向上述处理室供给处理气体，并从上述处理室排出环境气。Electromagnetic waves are supplied from the side of the substrate so that the surface of the substrate is not processed in the groove, processing gas is supplied to the processing chamber, and ambient gas is exhausted from the processing chamber. 20.一种记录介质，其特征在于，20. A recording medium, characterized in that: 上述记录介质记录使计算机执行以下步骤的程序：The above-mentioned recording medium records a program for causing a computer to execute the following steps: 将具有构成多个槽的柱的基板载置于装备在处理室内且具有基板载置面的基板载置部；以及placing a substrate having columns forming a plurality of grooves on a substrate placing portion equipped in a processing chamber and having a substrate placing surface; and 以不对上述槽之中进行处理而对上述基板的表面进行处理的方式从上述基板的侧方供给电磁波，向上述处理室供给处理气体，并从上述处理室排出环境气。Electromagnetic waves are supplied from the side of the substrate so that the surface of the substrate is not processed in the groove, processing gas is supplied to the processing chamber, and ambient gas is exhausted from the processing chamber.
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