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CN112162435A - Lateral-entering type quantum dot backlight module structure - Google Patents

Lateral-entering type quantum dot backlight module structure Download PDF

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CN112162435A
CN112162435A CN202011271025.7A CN202011271025A CN112162435A CN 112162435 A CN112162435 A CN 112162435A CN 202011271025 A CN202011271025 A CN 202011271025A CN 112162435 A CN112162435 A CN 112162435A
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light
quantum dot
guide plate
light guide
light source
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CN112162435B (en
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陈恩果
蔡俊虎
江宗钊
王晨辉
徐胜
叶芸
郭太良
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Fuzhou University
Mindu Innovation Laboratory
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Mindu Innovation Laboratory
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133615Edge-illuminating devices, i.e. illuminating from the side

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Planar Illumination Modules (AREA)

Abstract

本发明涉及一种侧入式量子点背光模组结构,包括两个设有反射罩的激发光源、一个光路转换装置和一个量子点导光板,所述激发光源分别位于光路转换装置的左右两侧,所述光路转换装置位于量子点导光板侧边,所述量子点导光板的入光侧具有量子点层;所述激发光源发出的光,一部分经光路转换装置反射后入射至量子点导光板,经由量子点层的色转换和量子点导光板的调制后出光,另一部分经光路转换装置后射向反射罩的光,经反射罩的反射和光路转换装置的作用后,再次入射至量子点导光板内重复利用。该结构不仅能够有效降低光辐射和光源热量对量子点所产生的影响,提高背光模组的使用寿命,而且大大减少了应用于背光模组中的光源数量,降低了产线成本。

Figure 202011271025

The invention relates to an edge-type quantum dot backlight module structure, comprising two excitation light sources provided with a reflector, an optical path conversion device and a quantum dot light guide plate, wherein the excitation light sources are respectively located on the left and right sides of the optical path conversion device , the light path conversion device is located on the side of the quantum dot light guide plate, and the light incident side of the quantum dot light guide plate has a quantum dot layer; part of the light emitted by the excitation light source is reflected by the light path conversion device and then incident on the quantum dot light guide plate , after the color conversion of the quantum dot layer and the modulation of the quantum dot light guide plate, the light is emitted, and the other part of the light that is emitted to the reflector after passing through the optical path conversion device is reflected by the reflector and the function of the light path conversion device, and then enters the quantum dots again. Reuse in the light guide plate. The structure can not only effectively reduce the influence of light radiation and light source heat on the quantum dots, improve the service life of the backlight module, but also greatly reduce the number of light sources used in the backlight module and reduce the production line cost.

Figure 202011271025

Description

Lateral-entering type quantum dot backlight module structure
Technical Field
The invention belongs to the technical field of display, and particularly relates to a side-in quantum dot backlight module structure.
Background
With the development of display technology, liquid crystal displays have become the most developed display device among many flat panel display devices, and the liquid crystal displays have the widest application range and are still rapidly developed. The LCD has the advantages of light weight, low energy consumption, soft picture, good heat dissipation, etc., and is widely applied to display products such as mobile phones, flat panels, televisions, etc. with the continuous reduction of the manufacturing cost of the LCD. At present, most LCD color gamut is about 78% NTSC color gamut, and compared with wide color gamut, the display effect is poorer, and especially, a red area is often distorted when displayed. Recently, due to the narrow emission spectrum of quantum dots, the emission spectrum is easy to control, the quantum yield is high, the absorption spectrum is wide and a wide color gamut (up to more than 120% NTSCS color gamut) is provided, so that the quantum dots become mainstream materials of next generation liquid crystal backlights.
For a traditional lateral-entering quantum dot backlight module, an LED light source is positioned on the side edge of a light guide plate, light emitted by the light source uniformly emits light after color conversion of a quantum dot layer and modulation of microstructures, wherein the quantum dot layer can be arranged at the incident position of a backlight LED in an 'on-edge' mode, and can also be arranged on the light incident side in the light guide plate through an integrated forming process of the light guide plate. However, for such a conventional lateral-type quantum dot backlight module, the distance between the light source and the quantum dot layer is short, and the radiation of the light source and the generated heat may reduce the stability of the quantum dots in the quantum dot layer, thereby affecting the service life of the backlight module.
Disclosure of Invention
The invention aims to provide a lateral-entering type quantum dot backlight module structure which is beneficial to prolonging the service life of the backlight module and reducing the production line cost.
In order to achieve the purpose, the invention adopts the technical scheme that: a side-in quantum dot backlight module structure comprises two excitation light sources provided with reflectors, a light path conversion device and a quantum dot light guide plate, wherein the excitation light sources are respectively positioned at the left side and the right side of the light path conversion device; and one part of light emitted by the excitation light source is reflected by the light path conversion device and then enters the quantum dot light guide plate, the light is emitted after the color conversion of the quantum dot layer and the modulation of the quantum dot light guide plate, and the other part of light emitted to the reflecting cover after passing through the light path conversion device is reflected by the reflecting cover and the action of the light path conversion device and then enters the quantum dot light guide plate again for recycling.
Furthermore, the light path conversion device comprises a light transmission medium layer embedded with a plurality of reflection structures, the size of the light transmission medium layer is matched with that of the quantum dot light guide plate, each excitation light source is provided with at least one reflection structure corresponding to the excitation light source, and the reflection structures are symmetrical about the central axis positions of the two excitation light sources so as to respectively reflect the light emitted by the excitation light sources and emit the light to the quantum dot light guide plate.
Furthermore, the reflecting structure is a reflecting sheet with high reflection or semi-transmission and semi-reflection optical properties, the reflecting surface of the reflecting sheet is high reflection or semi-transmission and semi-reflection properties, and the corresponding surface of the reflecting surface is transmission properties; when the size of the light transmission medium layer is not larger than a set value, only two reflecting sheets respectively corresponding to the excitation light sources are arranged in the light transmission medium layer, and the reflecting sheets with high reflection property are adopted; when the size of the light transmission medium layer is larger than a set value, two reflector plate combined structures respectively corresponding to the excitation light sources are arranged in the light transmission medium layer, each reflector plate combined structure is composed of reflector plates with high reflection and semi-transmission and semi-reflection optical properties, the reflector plate closest to the central axis positions of the two excitation light sources adopts a reflector plate with high reflection property, and the rest of the reflector plates adopt reflector plates with semi-transmission and semi-reflection properties.
Furthermore, the angle and the orientation of the totally-reflecting or semi-transmitting and semi-reflecting reflector plate are arranged according to the positions of the excitation light source and the reflector thereof, the reflector plate is obliquely arranged, and the reflecting surface faces the emergent surface of the light transmission medium layer; the included angle range of the reflecting surface and the excitation light source is 45 degrees +/-30 degrees, and the included angles of the reflecting sheets corresponding to the same excitation light source and the excitation light source are gradually changed, so that Lambert divergent light of the excitation light source is uniformly emitted into the quantum dot light guide plate after being acted by the reflecting sheets; and a reflective coating is arranged on the corresponding surface of the emergent surface of the light transmission medium layer so as to reflect and reuse part of side leakage light.
Furthermore, a device for converting light rays into parallel light rays is arranged between the excitation light source and the light transmission medium layer, so that the light rays entering the light transmission medium layer are easier to control and emit; the light transmission medium has a light diffusion device on its emergent surface to make the converted light uniformly incident into the quantum dot light guide plate.
Further, the quantum dot light guide plate is made of one or more of Polyethylene (PE), polypropylene (PP), polyethylene naphthalate (PEN), Polycarbonate (PC), polymethyl acrylate (PMA) and polymethyl methacrylate (PMMA).
Further, the distance between the excitation light source and the end face of the light path conversion device is 0.1 mm-1 mm; the excitation light source adopts an ultraviolet light source with the wavelength range of 280nm to 400nm, or adopts a blue light source with the central wavelength of 430nm to 480nm and the half-peak width of 15nm to 55 nm; the opening of the reflecting cover is at least larger than the light emitting area of the excitation light source; the thickness of the excitation light source is smaller than or equal to that of the light path conversion device, and the thickness of the light path conversion device is adaptive to that of the quantum dot light guide plate.
Furthermore, the quantum dot layer is arranged on the light incident side in the quantum dot light guide plate through an integrated molding process, or the quantum dot layer is arranged on the surface of the light incident side of the quantum dot light guide plate or between the light path conversion device and the quantum dot light guide plate, or the quantum dot layer is coated or formed on the light emergent surface of the quantum dot light guide plate; and a light scattering structure is arranged at the bottom of the quantum dot light guide plate.
Compared with the prior art, the invention has the following beneficial effects: the utility model provides a novel side income formula quantum dot backlight unit structure, this structural design light path conversion equipment, the light that the light source sent is through the light path conversion after the reentrant quantum dot layer to can effectively reduce the direct radiation and the heat conduction of light source and to the produced influence of quantum dot, improve backlight unit's life, the light source quantity of being applied to in backlight unit that has significantly reduced moreover has reduced and has produced the line cost. Therefore, the invention has strong practicability and wide application prospect.
Drawings
Fig. 1 is a schematic view of a lateral quantum dot backlight module structure according to the present invention.
Fig. 2 is a schematic structural diagram of a first embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a second embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a third embodiment of the present invention.
Fig. 5 is a schematic structural diagram of a fourth embodiment of the present invention.
In the figure: 1-an excitation light source; 2-a reflector; 3-a reflective coating; 4-a reflective structure; 5-optical path switching means; 6-quantum dot layer; 7-a quantum dot light guide plate; 8-a reflector plate with total reflection optical property; 9-a light diffusing device; a 10-convex lens; 11-reflective sheet with semi-transparent and semi-reflective optical properties.
Detailed Description
The invention is described in further detail below with reference to the figures and the embodiments.
As shown in fig. 1, the present invention provides a side-in quantum dot backlight module structure, which includes two excitation light sources with reflectors, a light path conversion device and a quantum dot light guide plate, wherein the excitation light sources are respectively located at the left and right sides of the light path conversion device, the light path conversion device is located at the side of the quantum dot light guide plate, and the light-in side of the quantum dot light guide plate has a quantum dot layer; and one part of light emitted by the excitation light source is reflected by the light path conversion device and then enters the quantum dot light guide plate, the light is emitted after the color conversion of the quantum dot layer and the modulation of the quantum dot light guide plate, and the other part of light emitted to the reflecting cover after passing through the light path conversion device is reflected by the reflecting cover and the action of the light path conversion device and then enters the quantum dot light guide plate again for recycling.
The light path conversion device comprises a light transmission medium layer embedded with a plurality of reflection structures, the size of the light transmission medium layer is matched with that of the quantum dot light guide plate, each excitation light source is provided with at least one reflection structure corresponding to the excitation light source, and the reflection structures are symmetrical about the central axis positions of the two excitation light sources so as to respectively reflect light emitted by the excitation light sources to the quantum dot light guide plate.
The reflecting structure is a reflecting sheet with high reflection or semi-transmission and semi-reflection optical properties, the reflecting surface of the reflecting sheet is high reflection or semi-transmission and semi-reflection optical properties, and the corresponding surface of the reflecting surface is transmission optical properties; when the size of the light transmission medium layer is not larger than a set value, only two reflecting sheets respectively corresponding to the excitation light sources are arranged in the light transmission medium layer, and the reflecting sheets with high reflection property are adopted; when the size of the light transmission medium layer is larger than a set value, two reflector plate combined structures respectively corresponding to the excitation light sources are arranged in the light transmission medium layer, each reflector plate combined structure is composed of reflector plates with high reflection and semi-transmission and semi-reflection optical properties, the reflector plate closest to the central axis positions of the two excitation light sources adopts a reflector plate with high reflection property, and the rest of the reflector plates adopt reflector plates with semi-transmission and semi-reflection properties. The angle and the direction of the totally-reflecting or semi-transmitting and semi-reflecting reflector plate are arranged according to the positions of the excitation light source and the reflector thereof, the reflector plate is obliquely arranged, and the reflecting surface faces to the emergent surface of the light transmission medium layer; the included angle range of the reflecting surface and the excitation light source is 45 degrees +/-30 degrees, and the included angles of the reflecting sheets corresponding to the same excitation light source and the excitation light source are gradually changed, so that Lambert divergent light of the excitation light source is uniformly emitted into the quantum dot light guide plate after being acted by the reflecting sheets; and a reflective coating is arranged on the corresponding surface of the emergent surface of the light transmission medium layer so as to reflect and reuse part of side leakage light.
A device for converting light rays into parallel light rays is arranged at a certain position between the excitation light source and the light transmission medium layer, so that the light rays entering the light transmission medium layer are easier to control and emit. The device includes but is not limited to convex lens or convex lens combination, etc., and the setting position is adjusted according to the position of the excitation light source and the reflecting cover thereof. The light transmission medium has a light diffusion device on its emergent surface to make the converted light uniformly incident into the quantum dot light guide plate. Such means include, but are not limited to, a scattering particle layer, a concave lens, etc.
The quantum dot light guide plate is made of one or more of Polyethylene (PE), polypropylene (PP), polyethylene naphthalate (PEN), Polycarbonate (PC), polymethyl acrylate (PMA) and polymethyl methacrylate (PMMA).
The distance between the excitation light source and the end face of the light path conversion device is 0.1 mm-1 mm; the excitation light source adopts an ultraviolet light source with the wavelength range of 280nm to 400nm, or adopts a blue light source with the central wavelength of 430nm to 480nm and the half-peak width of 15nm to 55 nm; including but not limited to mercury lamps, LEDs, laser diodes, OLEDs, etc. The opening of the reflecting cover is at least larger than the light emitting area of the excitation light source; the thickness of the excitation light source is smaller than or equal to that of the light path conversion device, and the thickness of the light path conversion device is adaptive to that of the quantum dot light guide plate. The brightness of the backlight module can be improved by increasing the number of the excitation light sources, and the positions of the excitation light sources can be not limited to the two ends of the light path conversion device, and also can be in the light path conversion device.
The quantum dot layer is arranged on the light incident side in the quantum dot light guide plate through an integrated forming process, or the quantum dot layer is arranged on the surface of the light incident side of the quantum dot light guide plate or between the light path conversion device and the quantum dot light guide plate, or the quantum dot layer is coated or formed on the light emergent surface of the quantum dot light guide plate; the quantum dot light guide plate is a general term for light guide plates containing quantum dot color conversion layers at the light incident side or near the light incident side or at the light emergent side, and light scattering structures in the forms of light scattering microstructures or microgrooves and the like are arranged at the bottom of the quantum dot light guide plate. The quantum dot layer can be provided with a water-proof oxygen-isolating layer and a heat dissipation layer, so that the influence of the external environment on the quantum dots is further reduced, and the service life of the backlight module is prolonged.
The first embodiment is as follows:
as shown in fig. 2, the present embodiment provides a novel lateral-entry type quantum dot backlight module structure, which includes two excitation light sources and reflectors thereof, a light path conversion device, and a quantum dot light guide plate. The light path conversion device comprises a light transmission medium layer embedded with a reflector plate, and a light diffusion device is arranged on a light emergent surface of the light transmission medium layer.
The excitation light source is a blue light source, the central wavelength of the blue light source is 450nm, and the half-peak width of the blue light source is 20 nm. The distance between the light source and the end face of the light path conversion device is 0.1mm, a reflecting cover is arranged outside the light source, and the opening of the reflecting cover is larger than the light emitting area of the light source. The thickness of the light source light-emitting unit is slightly smaller than that of the light path conversion device. The excitation light sources are positioned on two end faces of the light path conversion device, and the light emitting areas of the light sources are matched with the areas of the two end faces in the light conversion device.
In the optical path switching device, the light transmission medium carrier is a light guide plate made of PMMA, and as described above, the light emitting area of the excitation light source should be matched with the area of the end face of the light guide plate. Two reflecting sheets with total reflection optical properties are embedded in the light guide plate, the reflecting sheets are obliquely arranged, the reflecting surfaces face the light emergent surface of the light transmission medium layer, the two reflecting sheets are symmetrical about the central axis of the excitation light source, and the included angles between the two reflecting surfaces and parallel light in the excitation light source are 135 degrees respectively. A light diffusion layer is arranged on the light emergent surface of the light guide plate, and SiO is embedded in the light diffusion layer2And the scattering particles enable the converted light to be more uniformly emitted into the quantum dot light guide plate.
The width and the thickness of the quantum dot light guide plate are matched with those of the light transmission light guide plate. The quantum dot layer in the quantum dot light guide plate is arranged on the light incident side in the light guide plate through an integrated forming process.
Example two:
as shown in fig. 3, two convex lenses are introduced into the above structure, the convex lenses are disposed on the end surface of the light transmission medium layer, and the excitation light source is disposed at the focal point of the convex lenses, so that the scattered light emitted from the light source passes through the convex lenses and then becomes parallel light, and the parallel light can be more easily controlled and emitted into the light guide plate.
Example three:
as shown in fig. 4, the present embodiment provides a novel lateral-entry type quantum dot backlight module structure, which includes two excitation light sources and reflectors thereof, a light path conversion device, and a quantum dot light guide plate. The light path conversion device comprises a light transmission medium layer embedded with a reflector plate, a light diffusion device is arranged on a light emergent surface of the light transmission medium layer, and a reflection coating is arranged on a corresponding surface of the light emergent surface of the light transmission medium layer.
The excitation light source is a blue light source, the central wavelength of the blue light source is 450nm, and the half-peak width of the blue light source is 20 nm. The distance between the light source and the end face of the light path conversion device is 0.1mm, a reflecting cover is arranged outside the light source, and the opening of the reflecting cover is larger than the light emitting area of the light source. The thickness of the light source light-emitting unit is slightly smaller than that of the light path conversion device. The excitation light sources are positioned on two end faces of the light path conversion device, and the light emitting areas of the light sources are matched with the areas of the two end faces in the light conversion device.
In the optical path switching device, the light transmission medium carrier is a light guide plate made of PMMA, and as described above, the light emitting area of the excitation light source should be matched with the area of the end face of the light guide plate. In the light guide plate, each excitation light source is provided with two reflection sheets with semi-transparent and semi-reflective optical properties and one reflection sheet with total reflection optical properties, the reflection sheets are obliquely arranged, the reflection surfaces face the light emergent surface of the light transmission medium layer, the angles of the reflection surfaces and the excitation light sources are gradually changed to 45 degrees, 35 degrees and 25 degrees, the reflection sheets are symmetrical about the central axes of the excitation light sources, the reflection sheets close to the central axes of the two excitation light sources are reflection sheets with high reflection properties, and the angle of the reflection sheet corresponding to the other excitation light source corresponds to the angle of the reflection sheet. A light diffusion layer is arranged on the light emergent surface of the light guide plate, and SiO is embedded in the light diffusion layer2ScatteringThe particles enable the converted light to be more uniformly emitted into the quantum dot light guide plate. A layer of reflective coating is spin-coated on the corresponding surface of the light-emitting surface of the light guide plate, and the reflective coating can be made of silver or silver alloy, so that part of side leakage light can be reflected and utilized again.
The width and the thickness of the quantum dot light guide plate are matched with those of the light transmission light guide plate. The quantum dot layer in the quantum dot light guide plate is arranged on the light incident side in the light guide plate through an integrated forming process.
Example four:
as shown in fig. 5, two convex lenses are introduced into the above structure, the convex lenses are disposed on the end surface of the light transmission medium layer, and the excitation light source is disposed at the focal point of the convex lenses, so that the scattered light emitted from the light source passes through the convex lenses and then becomes parallel light, and the parallel light can be more easily controlled and emitted into the light guide plate.
The above are preferred embodiments of the present invention, and all changes made according to the technical scheme of the present invention that produce functional effects do not exceed the scope of the technical scheme of the present invention belong to the protection scope of the present invention.

Claims (8)

1.一种侧入式量子点背光模组结构,其特征在于,包括两个设有反射罩的激发光源、一个光路转换装置和一个量子点导光板,所述激发光源分别位于光路转换装置的左右两侧,所述光路转换装置位于量子点导光板侧边,所述量子点导光板的入光侧具有量子点层;所述激发光源发出的光,一部分经光路转换装置反射后入射至量子点导光板,经由量子点层的色转换和量子点导光板的调制后出光,另一部分经光路转换装置后射向反射罩的光,经反射罩的反射和光路转换装置的作用后,再次入射至量子点导光板内重复利用。1. an edge-type quantum dot backlight module structure, is characterized in that, comprises two excitation light sources that are provided with reflector, an optical path conversion device and a quantum dot light guide plate, and described excitation light source is located in the light path conversion device respectively. On the left and right sides, the optical path conversion device is located on the side of the quantum dot light guide plate, and the light incident side of the quantum dot light guide plate has a quantum dot layer; part of the light emitted by the excitation light source is reflected by the optical path conversion device and then incident on the quantum dots. The point light guide plate emits light after the color conversion of the quantum dot layer and the modulation of the quantum dot light guide plate, and the other part of the light that is emitted to the reflector after passing through the optical path conversion device is reflected by the reflector and the light path conversion device. It can be reused in the quantum dot light guide plate. 2.根据权利要求1所述的一种侧入式量子点背光模组结构,其特征在于,所述光路转换装置包括一个内嵌有多个反射结构的光传输介质层,所述光传输介质层的尺寸与量子点导光板的尺寸相匹配,每个激发光源至少有一个与之对应的反射结构,且反射结构关于两激发光源的中轴线位置对称,以分别将激发光源发出的光经反射后射向量子点导光板。2 . The structure of an edge-type quantum dot backlight module according to claim 1 , wherein the optical path conversion device comprises an optical transmission medium layer embedded with a plurality of reflective structures, and the optical transmission medium The size of the layer matches the size of the quantum dot light guide plate, and each excitation light source has at least one corresponding reflection structure, and the reflection structure is symmetrical about the central axis of the two excitation light sources, so as to reflect the light emitted by the excitation light sources respectively. Rear radiation to the quantum dot light guide plate. 3.根据权利要求2所述的一种侧入式量子点背光模组结构,其特征在于,所述反射结构为光学属性为高反射或半透半反的反射片,其反射面为高反射或半透半反性质,反射面的对应面为透射性质;当光传输介质层的尺寸不大于设定值时,光传输介质层内部只设置分别与激发光源对应的两个反射片,并采用高反射性质的反射片;当光传输介质层的尺寸大于设定值时,光传输介质层内部设置分别与激发光源对应的两个反射片组合结构,所述反射片组合结构由高反射和半透半反光学属性的反射片组成,其中最靠近两激发光源的中轴线位置的反射片采用高反射性质的反射片,其余反射片采用半透半反性质的反射片。3 . The structure of an edge-type quantum dot backlight module according to claim 2 , wherein the reflective structure is a reflective sheet whose optical properties are highly reflective or transflective, and whose reflective surface is highly reflective. 4 . or semi-transparent and semi-reflective properties, the corresponding surface of the reflective surface is transmissive; when the size of the optical transmission medium layer is not greater than the set value, only two reflective sheets corresponding to the excitation light source are set inside the optical transmission medium layer, and use Reflective sheet with high reflection properties; when the size of the optical transmission medium layer is larger than the set value, two reflective sheet combined structures corresponding to the excitation light source are arranged inside the optical transmission medium layer, and the combined reflective sheet structure is composed of high reflection and semi-reflective. It is composed of reflective sheets with transflective optical properties, in which the reflective sheets closest to the central axis of the two excitation light sources are reflective sheets with high reflection properties, and the remaining reflective sheets are reflective sheets with transflective properties. 4.根据权利要求2所述的一种侧入式量子点背光模组结构,其特征在于,所述全反或半透半反的反射片的角度和方位根据激发光源及其反射罩的位置而设置,反射片倾斜放置且反射面朝向光传输介质层的出射面;所述反射面与激发光源的夹角范围为45°±30°,且同一激发光源所对应的各反射片与激发光源的夹角渐变设置,以保证激发光源的朗伯发散光经各反射片的作用后均匀出射至量子点导光板内;所述光传输介质层的出射面的对应面上设置反射涂层,以将部分侧漏光重新反射利用。4 . The structure of an edge-type quantum dot backlight module according to claim 2 , wherein the angle and orientation of the all-reflective or transflective reflective sheet are based on the position of the excitation light source and its reflector. 5 . The reflective sheet is placed obliquely and the reflective surface faces the exit surface of the light transmission medium layer; the angle between the reflective surface and the excitation light source is 45°±30°, and each reflection sheet corresponding to the same excitation light source and the excitation light source The gradient of the included angle is set to ensure that the Lambertian divergence light of the excitation light source is uniformly emitted into the quantum dot light guide plate after the action of each reflective sheet; a reflective coating is provided on the corresponding surface of the emitting surface of the light transmission medium layer to prevent Part of the side leakage light is re-reflected and utilized. 5.根据权利要求2所述的一种侧入式量子点背光模组结构,其特征在于,激发光源与光传输介质层之间设置有将光线转变为平行光的装置,以使进入光传输介质层的光线更容易被控制和射出;光传输介质的出射面上设置具有光扩散功能的装置,以使转换光更均匀地射入量子点导光板内。5. The structure of an edge-type quantum dot backlight module according to claim 2, wherein a device for converting light into parallel light is arranged between the excitation light source and the light transmission medium layer, so that the incoming light transmits The light of the medium layer is easier to control and exit; the light-diffusing device is arranged on the exit surface of the optical transmission medium, so that the converted light can be injected into the quantum dot light guide plate more uniformly. 6.根据权利要求2所述的一种侧入式量子点背光模组结构,其特征在于,所述量子点导光板的材料为聚乙烯PE、聚丙烯PP、聚萘二甲酸乙二醇酯PEN、聚碳酸酯PC、聚丙烯酸甲酯PMA以及聚甲基丙烯酸甲酯PMMA中的一种或几种。6. The structure of an edge-type quantum dot backlight module according to claim 2, wherein the material of the quantum dot light guide plate is polyethylene PE, polypropylene PP, polyethylene naphthalate One or more of PEN, polycarbonate PC, polymethyl acrylate PMA and polymethyl methacrylate PMMA. 7.根据权利要求1所述的一种侧入式量子点背光模组结构,其特征在于,所述激发光源与光路转换装置端面的间距在0.1mm至1mm之间;激发光源采用紫外光源,其波长范围在280nm至400nm之间,或采用蓝光光源,其中心波长在430nm至480nm之间,半峰宽在15nm至55nm之间;所述反射罩的开口至少大于激发光源的发光面积;所述激发光源的厚度小于或等于光路转换装置的厚度,光路转换装置的厚度与量子点导光板的厚度相适应。7 . The structure of an edge-type quantum dot backlight module according to claim 1 , wherein the distance between the excitation light source and the end face of the optical path conversion device is between 0.1 mm and 1 mm; the excitation light source adopts an ultraviolet light source, Its wavelength range is between 280nm and 400nm, or a blue light source is used, its center wavelength is between 430nm and 480nm, and its half-peak width is between 15nm and 55nm; the opening of the reflector is at least larger than the light emitting area of the excitation light source; so The thickness of the excitation light source is less than or equal to the thickness of the optical path conversion device, and the thickness of the optical path conversion device is adapted to the thickness of the quantum dot light guide plate. 8.根据权利要求1所述的一种侧入式量子点背光模组结构,其特征在于,所述量子点层通过一体化成型工艺设置于量子点导光板内部的入光侧,或将量子点层设置于量子点导光板入光侧的表面或光路转换装置与量子点导光板之间,或将量子点层涂覆或形成于量子点导光板的出光面;所述量子点导光板底部设有光散射结构。8 . The structure of an edge-type quantum dot backlight module according to claim 1 , wherein the quantum dot layer is disposed on the light-incident side inside the quantum dot light guide plate through an integrated molding process, or the quantum dots The dot layer is arranged on the surface of the light entrance side of the quantum dot light guide plate or between the light path conversion device and the quantum dot light guide plate, or the quantum dot layer is coated or formed on the light emitting surface of the quantum dot light guide plate; the bottom of the quantum dot light guide plate With light scattering structure.
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