CN112134140B - Electrically-controlled active coupled cavity laser - Google Patents
Electrically-controlled active coupled cavity laser Download PDFInfo
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- CN112134140B CN112134140B CN202010929131.3A CN202010929131A CN112134140B CN 112134140 B CN112134140 B CN 112134140B CN 202010929131 A CN202010929131 A CN 202010929131A CN 112134140 B CN112134140 B CN 112134140B
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 104
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 104
- 239000010703 silicon Substances 0.000 claims abstract description 104
- 230000008878 coupling Effects 0.000 claims abstract description 92
- 238000010168 coupling process Methods 0.000 claims abstract description 92
- 238000005859 coupling reaction Methods 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000001105 regulatory effect Effects 0.000 claims abstract description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 20
- 150000004767 nitrides Chemical class 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 66
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 59
- 238000005516 engineering process Methods 0.000 description 15
- 238000000034 method Methods 0.000 description 14
- 238000001039 wet etching Methods 0.000 description 7
- 229910017083 AlN Inorganic materials 0.000 description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1042—Optical microcavities, e.g. cavity dimensions comparable to the wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
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- Physics & Mathematics (AREA)
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- Semiconductor Lasers (AREA)
Abstract
本发明公开了一种电调控的有源耦合腔激光器，包括硅衬底；所述硅衬底上设置有第一有源耦合腔、第二有源耦合腔和硅衬底电极；所述第一有源耦合腔和第二有源耦合腔均通过硅柱固定在硅衬底上；所述第一有源耦合腔、第二有源耦合腔的底部与硅柱之间均设置有氮化铝层；所述第二有源耦合腔的顶部设置有第一耦合腔电极和第二耦合腔电极；所述第一耦合腔电极和第二耦合腔电极均为半圆形结构且相对设置。本发明在光激发下通过三个电极的不同组合供电方式给有源腔提供横向和纵向电场，实现对发光模式的调控。
The invention discloses an electrically regulated active coupled cavity laser, comprising a silicon substrate; a first active coupled cavity, a second active coupled cavity and a silicon substrate electrode are arranged on the silicon substrate; Both an active coupling cavity and a second active coupling cavity are fixed on the silicon substrate through silicon pillars; a nitride is arranged between the bottom of the first active coupling cavity and the second active coupling cavity and the silicon pillars. an aluminum layer; the top of the second active coupling cavity is provided with a first coupling cavity electrode and a second coupling cavity electrode; the first coupling cavity electrode and the second coupling cavity electrode are both semicircular structures and are arranged oppositely. The invention provides lateral and vertical electric fields to the active cavity through different combined power supply modes of the three electrodes under optical excitation, so as to realize the regulation of the luminescence mode.
Description
Technical Field
The invention belongs to the technical field of visible light, and relates to an electrically-controlled active coupled cavity laser.
Background
GaN-based semiconductor technology has been developed rapidly since its birth, and has been widely used in various fields due to its advantages of high photoelectric conversion efficiency, wide wavelength coverage, long service life, direct modulation, etc.
Compared with a block structure, the microcavity can effectively realize optical field confinement and enhance the interaction between light and substances, thereby improving the performance of the device. At the same time, the presence of microcavities can enrich the optical processes in the bulk material. The development of micromachining technologies such as photoetching and reactive ion etching provides possibility for designing and preparing GaN optical microcavities. Optoelectronic devices based on GaN microcavities, such as lasers and detectors, are receiving much attention, but the current laser devices are all multimode, and the mode is relatively fixed after the microcavity structure is determined, which hinders the application of GaN ultraviolet lasers. The current means for realizing spectrum regulation and control include reducing the size of a micro-cavity, designing a coupling cavity and the like, compared with the former two methods, the method capable of realizing in-situ real-time regulation and control has more practical application value, and the electro-optic effect is one of feasible schemes proved at present. The invention aims to solve the problem of how to realize better performance by using the electro-optic effect to regulate and control the laser characteristics of a GaN microcavity.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides an electrically-regulated active coupled cavity laser to solve the problem of poor laser characteristics of a GaN microcavity in the prior art.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
an electrically-controlled active coupled cavity laser includes a silicon substrate; a first active coupling cavity, a second active coupling cavity and a silicon substrate electrode are arranged on the silicon substrate; the first active coupling cavity and the second active coupling cavity are fixed on the silicon substrate through silicon columns; aluminum nitride layers are arranged between the bottoms of the first active coupling cavity and the second active coupling cavity and the silicon column; a first coupling cavity electrode and a second coupling cavity electrode are arranged at the top of the second active coupling cavity; the first coupling cavity electrode and the second coupling cavity electrode are both in semicircular structures and are oppositely arranged; the first active coupling cavity and the second active coupling cavity are coupled with each other.
Further, the first active coupling cavity and the second active coupling cavity are disk cavities with different diameters and are coupled with each other.
Furthermore, the first coupling cavity electrode is connected with a first pin electrode through a first cantilever beam electrode; and the second coupling cavity electrode is connected with a second pin electrode through a second cantilever beam electrode.
Further, a first cantilever beam support is arranged at the bottom of the first cantilever beam electrode; a second cantilever beam support is arranged at the bottom of the second cantilever beam electrode; a first pin support is arranged at the bottom of the first pin electrode; a second pin support is arranged at the bottom of the second pin electrode; the first cantilever beam support, the second cantilever beam support, the first pin support and the second pin support are of an integral structure.
Furthermore, the bottoms of the first cantilever beam support, the second cantilever beam support, the first pin support and the second pin support are all provided with aluminum nitride layers.
Furthermore, the first pin support and the second pin support are both fixed on the silicon substrate through silicon pillars.
Further, the first active coupling cavity, the second active coupling cavity, the first cantilever beam support, the second cantilever beam support, the first pin support and the second pin support are all GaN layers.
Compared with the prior art, the invention has the following advantages:
according to the invention, the silicon column is adopted to support the active coupling cavity structure, compared with the traditional structure, the active coupling cavity can be suspended, the loss is reduced, and the laser characteristic of the laser is improved; the design of the active coupling cavity can effectively regulate and control the laser mode; the introduction of the cantilever beam can solve the difficulty caused by a bridging technology in the preparation of the electrode after the device is suspended; the electrode pin structure on the side surface can effectively improve the convenience of later-stage driving of the device and improve the practicability of the device; on the other hand, the material adopted by the invention is not only a single gallium nitride material, but also a layer of aluminum nitride is arranged under the gallium nitride, and the structure can effectively isolate the electrical contact between the gallium nitride and the silicon substrate, thereby improving the later-stage electrical regulation effect of the device; and a silicon substrate electrode is arranged on the bottom silicon, and forms a field effect tube-like structure with the first two electrodes, and an electric field can be added in the transverse direction and the longitudinal direction.
Drawings
FIG. 1 is a schematic diagram of an active coupling cavity structure according to an embodiment of the present invention;
FIG. 2 is a front view of an active coupling cavity structure in an embodiment of the present invention;
FIG. 3 is a top view of an active cavity coupling structure in an embodiment of the invention;
fig. 4 is a process flow diagram for fabricating an active coupling cavity structure in an embodiment of the invention.
Reference numerals: 1-a first pin electrode; 2-a second pin electrode; 3-a first active coupling cavity; 4-a second active coupling cavity; 5-a first cantilever electrode; 6-a second cantilever electrode; 7-a first coupling cavity electrode; 8-a second coupling cavity electrode; 9-a silicon substrate electrode; 10-a silicon substrate; 11-a first pin support; 12-a second pin support; 13-a first cantilever beam support; 14-a second cantilever support; 15-a first silicon column; 16-a second silicon column; 17-a third silicon column; 18-a fourth silicon column; 19-aluminum nitride layer.
Detailed Description
The following further description of the present invention, in order to facilitate understanding of those skilled in the art, is provided in conjunction with the accompanying drawings and is not intended to limit the scope of the present invention.
As shown in fig. 1-3, an electrically-controlled active coupled cavity laser, which uses a silicon-based nitride wafer as a carrier, includes a first lead electrode 1, a second lead electrode 2, a first active coupled cavity 3, a second active coupled cavity 4, a first cantilever electrode 5, and a second cantilever electrode 6.
The first active coupling cavity 3 and the second active coupling cavity 4 are disk cavities with different diameters, a nanoscale interval is formed between the disk cavities, and an electrode is added on only one disk. The first active coupling cavity 3 and the second active coupling cavity 4 are coupled to each other.
A first coupling cavity electrode 7 and a second coupling cavity electrode 8 are arranged on the second active coupling cavity 4; the first coupling cavity electrode 7 and the second coupling cavity electrode 8 are semicircular and are arranged oppositely, and a transverse electric field can be applied to the device.
The first cantilever beam electrode 5 is used for connecting the first pin electrode 1 and the first coupling cavity electrode 7; the second cantilever beam electrode 6 is used for connecting the second pin electrode 2 and the second coupling cavity electrode 8; the first pin electrode 1 and the second pin electrode 2 have the same diameter and are respectively arranged at two sides of the second active coupling cavity 4.
A first cantilever support 13 is arranged at the bottom of the first cantilever electrode 5; a second cantilever support 14 is arranged at the bottom of the second cantilever electrode 6; the bottom of the first pin electrode 1 is provided with a first pin support 11; the bottom of the second pin electrode 2 is provided with a second pin support 12; the first cantilever support 13, the second cantilever support 14, the first pin support 11 and the second pin support 12 are of a unitary structure.
The first pin support 11 is supported by a first silicon pillar 15, the second active coupling cavity 4 is supported by a second silicon pillar 16, the second pin support 12 is supported by a third silicon pillar 17, and the first active coupling cavity 3 is supported by a fourth silicon pillar 18; the silicon column is suspended, the bottom of the silicon column is conical, the contact between the microdisk and the substrate is reduced to the maximum extent, the loss is reduced, and the electrode collapse is prevented. The bottoms of the first silicon column 15, the second silicon column 16, the third silicon column 17 and the fourth silicon column 16 are fixed on the silicon substrate 10.
The silicon substrate 10, the first silicon pillar 15, the second silicon pillar 16, the third silicon pillar 17 and the fourth silicon pillar 16 are all made of silicon layers.
The first active coupling cavity 3, the second active coupling cavity 4, the first pin support 11, the second pin support 12, the first cantilever support 13 and the second cantilever support 14 are all GaN layers.
The bottom silicon substrate 10 also has a silicon substrate electrode 9 thereon. The first coupling cavity electrode 7, the second coupling cavity electrode 8, the first active coupling cavity 3, the second active coupling cavity 4, the aluminum nitride layer 19 and the fourth silicon pillar 16 can form a field effect tube-like structure by matching with the silicon substrate 10 and the electrode silicon substrate electrode 9, and a longitudinal electric field can be applied to the device.
The first coupling cavity electrode 7 and the second coupling cavity electrode 8 can apply a transverse electric field to the device, any one of the top electrode and the bottom electrode can apply a vertical electric field to the device, and the single electrodes work together to form a field effect tube-like structure.
As shown in fig. 4, a method for preparing an electrically-controlled active coupled cavity laser includes the following steps:
the first step is as follows: spin-coating photoresist on the upper surface of gallium nitride of a silicon-based gallium nitride wafer, and then defining a pattern of a hole structure on the spin-coated photoresist layer by adopting an optical lithography technology to define a pattern corresponding to a first active coupling cavity 3, a second active coupling cavity 4, a first pin support 11, a second pin support 12, a first cantilever beam support 13 and a second cantilever beam support 14;
the second step is that: etching the nitride layer downwards by adopting an ICP (inductively coupled plasma) etching technology until the upper surface of the silicon substrate layer is etched, and then continuously etching downwards, copying the graph onto the silicon, so that the graph defined in the first step is transferred into the gallium nitride layer of the silicon-based nitride wafer to obtain four disc structures connected with the cantilever beam, and etching graphs corresponding to the first active coupling cavity 3, the second active coupling cavity 4, the first pin support 11, the second pin support 12, the first cantilever beam support 13 and the second cantilever beam support 14;
the third step: spin-coating photoresist on the substrate prepared in the second step, and then respectively defining transparent electrode patterns of a first pin electrode 1, a first cantilever beam electrode 5 and a first coupling cavity electrode 7 in a left electrode area and transparent electrode patterns of a second pin electrode 2, a second cantilever beam electrode 6 and a second coupling cavity electrode 8 in a right electrode area on the upper surfaces of the left side and the right side of the symmetrical thin-film microcavity structure by adopting an optical lithography technology;
the fourth step: evaporating a first pin electrode 1, a first cantilever beam electrode 5 and a first coupling cavity electrode 7 on the upper surface of a transparent electrode pattern of a left electrode area by adopting an electron beam evaporation technology, evaporating a second pin electrode 2, a second cantilever beam electrode 6 and a second coupling cavity electrode 8 on the upper surface of a transparent electrode pattern of a right electrode area by adopting an electron beam evaporation technology, so that a left semicircular electrode and a right semicircular electrode are respectively coated on a gallium nitride layer, and finally removing residual photoresist to obtain electrode structures corresponding to the first pin electrode 1 of the left area, the first cantilever beam electrode 5, the first coupling cavity electrode 7, the second pin electrode 2 of the right area, the second cantilever beam electrode 6 and the second coupling cavity electrode 8;
the fifth step: and etching silicon by adopting a mixed solution of hydrofluoric acid and dilute nitric acid until reaching the bottom of the silicon substrate layer by a wet method, so that an electrode and a circular electrode pin which support a silicon cone body of a symmetrical thin-film microcavity structure and leak a cantilever beam structure from the bottom surface are formed in the silicon substrate layer.
And a sixth step: and adding a silicon substrate electrode 9 at the bottom of the silicon substrate 10 to form a device.
The nitride suspended coupling microdisk, the cantilever beam and the electrode pin structure are designed and prepared by an advanced micro-nano processing technology.
The invention utilizes the optical photoetching, ICP etching process and hydrofluoric acid and dilute nitric acid mixed liquid wet etching process to prepare the symmetrical nitride suspended film micro-cavities with different sizes. Reasonable process steps are designed to obtain the symmetrical gallium nitride suspended film microcavity which is supported by a cone shape and has smooth edges. The bending loss of the microcavity and the scattering loss caused by the rough side surface are reduced. The design has the edge coupling cavity, designs the symmetrical round electrode support on the large disc, utilizes the cantilever beam structure to assist the semicircular electrode to form the electrode structure on the surface of the gallium nitride laser microdisk, and can introduce the means of microdisk electro-optical regulation and control.
The first coupling cavity electrode 7 and the second coupling cavity electrode 8 are respectively semi-annular electrodes arranged along the upper surface of the exposed gallium nitride layer, large-area gallium nitride is leaked, and the electrodes are not connected with each other.
Example 1
The silicon-based nitride wafer is used as a carrier, and the silicon substrate layer, the aluminum nitride layer, the gallium nitride layer, the left annular electrode, the right annular electrode and the electrode pin support are sequentially arranged on a single gallium nitride microdisk from bottom to top, and the middle parts of the silicon-based nitride wafer are connected by a cantilever beam structure. The silicon substrate layer of the microdisk wafer is hollow by a wet etching silicon technology, only the side wall and the bottom surface conical cylinder supporting part are reserved, and a suspended cavity below the gallium nitride layer is formed. This microdisk has set up two and has followed gallium nitride layer downwards to at least the cantilever beam of wearing gallium nitride layer, aluminium nitride layer to the cavity, and two electrode pin dishes set up respectively in the both sides of middle part microdisk, link to each other with the device through the cantilever beam, and left side semi-annular electrode and right side semi-annular electrode extend respectively about and are connected to middle part microdisk. Wherein the diameter of the central micro-disk is 20 microns, and the diameter of the micro-disk coupled with the central micro-disk is 10 microns. The microdisk is arranged on an annular electrode of a gallium nitride layer, the electrode width of the microdisk is 0.4 micron, the interval of the narrowest part is 5 microns, the width of a cantilever beam electrode extending to the microdisk in the middle is 0.2 micron, and the diameter of the electrode support on the right side of the microdisk with the length of 5 microns is 100 microns. An aluminum nitride layer is arranged between the silicon layer and the gallium nitride layer, and the thickness is 100 nanometers. The silicon substrate is also provided with electrodes to form a three-electrode structure.
Example 2
The invention relates to a method for electro-optical regulation and control of a gallium nitride microdisk, which takes a silicon-based nitride wafer as a carrier, and sequentially comprises a silicon substrate layer, an aluminum nitride layer, a gallium nitride layer, a left semi-annular electrode and a right semi-annular electrode which are respectively arranged on the single gallium nitride microdisk from bottom to top. The silicon substrate layer of the microdisk wafer is hollow by a wet etching silicon technology, only the side wall and the bottom surface conical cylinder supporting part are reserved, and a cavity located below the gallium nitride layer is formed. This microdisk has set up two and has followed gallium nitride layer downwards to at least the cantilever beam of wearing gallium nitride layer, aluminium nitride layer to the cavity, and two electrode pin dishes set up respectively in the both sides of middle part microdisk, link to each other with the device through the cantilever beam, and left side semi-annular electrode and right side semi-annular electrode extend respectively about and are connected to middle part microdisk. Wherein the diameter of the micro-disk at the middle part is 20 microns, and the diameter of the micro-disk coupled with the micro-disk is 10 microns. The microdisk is arranged on an annular electrode of a gallium nitride layer, the electrode width of the microdisk is 0.4 micron, the interval of the narrowest part is 5 microns, the width of a cantilever beam electrode extending to the microdisk in the middle is 0.4 micron, and the diameter of the electrode support on the right side of the microdisk with the length of 5 microns is 100 microns. An aluminum nitride layer is arranged between the silicon layer and the gallium nitride layer, and the thickness is 200 nanometers. The silicon substrate is also provided with electrodes to form a three-electrode structure.
Example 3
The invention relates to a method for electro-optical regulation and control of a gallium nitride microdisk, which takes a silicon-based nitride wafer as a carrier, and sequentially comprises a silicon substrate layer, an aluminum nitride layer, a gallium nitride layer, a left semi-annular electrode and a right semi-annular electrode which are respectively arranged on the gallium nitride layer from bottom to top. The silicon substrate layer of the microdisk wafer is hollow by a wet etching silicon technology, only the side wall and the bottom surface conical cylinder supporting part are reserved, and a cavity located below the gallium nitride layer is formed. This microdisk has set up two and has followed gallium nitride layer downwards to at least the cantilever beam of wearing gallium nitride layer, aluminium nitride layer to the cavity, and two electrode pin dishes set up respectively in the both sides of middle part microdisk, link to each other with the device through the cantilever beam, and left side semi-annular electrode and right side semi-annular electrode extend respectively about and are connected to middle part microdisk. Wherein the diameter of the micro-disk at the middle part is 20 microns, and the diameter of the micro-disk coupled with the micro-disk is 5 microns. The microdisk is arranged on an annular electrode of a gallium nitride layer, the electrode width of the microdisk is 0.4 micron, the interval of the narrowest part is 5 microns, the width of a cantilever beam electrode extending to the microdisk in the middle is 0.4 micron, and the diameter of the electrode support on the right side is 100 microns, and the length of the electrode support is 3 microns. An aluminum nitride layer is arranged between the silicon layer and the gallium nitride layer, and the thickness is 100 nanometers. The silicon substrate is also provided with electrodes to form a three-electrode structure.
Example 4
The invention relates to a method for electro-optical regulation and control of a gallium nitride microdisk, which takes a silicon-based nitride wafer as a carrier, and sequentially comprises a silicon substrate layer, an aluminum nitride layer, a gallium nitride layer, a left semi-annular electrode and a right semi-annular electrode which are respectively arranged on the gallium nitride layer from bottom to top. The silicon substrate layer of the microdisk wafer is hollow by a wet etching silicon technology, only the side wall and the bottom surface conical cylinder supporting part are reserved, and a cavity located below the gallium nitride layer is formed. This microdisk has set up two and has followed gallium nitride layer downwards to at least the cantilever beam of wearing gallium nitride layer, aluminium nitride layer to the cavity, and two electrode pin dishes set up respectively in the both sides of middle part microdisk, link to each other with the device through the cantilever beam, and left side semi-annular electrode and right side semi-annular electrode extend respectively about and are connected to middle part microdisk. Wherein the diameter of the central micro-disk is 20 microns, and the diameter of the micro-disk coupled with the central micro-disk is 15 microns. The microdisk is arranged on an annular electrode of a gallium nitride layer, the electrode width of the microdisk is 0.4 micron, the interval of the narrowest part is 5 microns, the width of a cantilever beam electrode extending to the microdisk in the middle is 0.4 micron, and the length of the cantilever beam electrode is 3 microns, and the diameter of the right electrode support is 200 microns. An aluminum nitride layer is arranged between the silicon layer and the gallium nitride layer, and the thickness is 100 nanometers. The silicon substrate is also provided with electrodes to form a three-electrode structure.
Example 5
The invention relates to a method for electro-optical regulation and control of a gallium nitride microdisk, which takes a silicon-based nitride wafer as a carrier, and sequentially comprises a silicon substrate layer, an aluminum nitride layer, a gallium nitride layer, a left semi-annular electrode and a right semi-annular electrode which are respectively arranged on the gallium nitride layer from bottom to top. The silicon substrate layer of the microdisk wafer is hollow by a wet etching silicon technology, only the side wall and the bottom surface conical cylinder supporting part are reserved, and a cavity located below the gallium nitride layer is formed. This microdisk has set up two and has followed gallium nitride layer downwards to at least the cantilever beam of wearing gallium nitride layer, aluminium nitride layer to the cavity, and two electrode pin dishes set up respectively in the both sides of middle part microdisk, link to each other with the device through the cantilever beam, and left side semi-annular electrode and right side semi-annular electrode extend respectively about and are connected to middle part microdisk. Wherein the diameter of the middle micro-disk is 30 micrometers, and the diameter of the micro-disk coupled with the middle micro-disk is 15 micrometers. The microdisk is arranged on an annular electrode of a gallium nitride layer, the electrode width of the microdisk is 0.5 micron, the interval of the narrowest part is 10 microns, the width of a cantilever beam electrode extending to the microdisk in the middle is 1 micron, and the length of the cantilever beam electrode is 3 microns, and the diameter of the electrode support on the right side is 200 microns. An aluminum nitride layer is arranged between the silicon layer and the gallium nitride layer, and the thickness is 200 nanometers. The silicon substrate is also provided with electrodes to form a three-electrode structure.
Example 6
The invention relates to a method for electro-optical regulation and control of a gallium nitride microdisk, which takes a silicon-based nitride wafer as a carrier, and sequentially comprises a silicon substrate layer, an aluminum nitride layer, a gallium nitride layer, a left semi-annular electrode and a right semi-annular electrode which are respectively arranged on the gallium nitride layer from bottom to top. The silicon substrate layer of the microdisk wafer is hollow by a wet etching silicon technology, only the side wall and the bottom surface conical cylinder supporting part are reserved, and a cavity located below the gallium nitride layer is formed. This microdisk has set up two and has followed gallium nitride layer downwards to at least the cantilever beam of wearing gallium nitride layer, aluminium nitride layer to the cavity, and two electrode pin dishes set up respectively in the both sides of middle part microdisk, link to each other with the device through the cantilever beam, and left side semi-annular electrode and right side semi-annular electrode extend respectively about and are connected to middle part microdisk. Wherein the diameter of the middle micro-disk is 30 micrometers, and the diameter of the micro-disk coupled with the middle micro-disk is 20 micrometers. The microdisk is arranged on an annular electrode of a gallium nitride layer, the electrode width of the microdisk is 0.5 micron, the interval of the narrowest part is 10 microns, the width of a cantilever beam electrode extending to the microdisk in the middle is 1 micron, and the diameter of an electrode support on the right side of the microdisk is 5 microns. An aluminum nitride layer is arranged between the silicon layer and the gallium nitride layer, and the thickness is 200 nanometers. The silicon substrate is also provided with electrodes to form a three-electrode structure.
The present invention is not limited to the above-mentioned embodiments, and based on the technical solutions disclosed in the present invention, those skilled in the art can make some substitutions and modifications to some technical features without creative efforts according to the disclosed technical contents, and these substitutions and modifications are all within the protection scope of the present invention.
Claims (7)
1. An electrically-controlled active coupled cavity laser is characterized by comprising a silicon substrate; a first active coupling cavity, a second active coupling cavity and a silicon substrate electrode are arranged on the silicon substrate; the first active coupling cavity and the second active coupling cavity are fixed on the silicon substrate through silicon columns; aluminum nitride layers are arranged between the bottoms of the first active coupling cavity and the second active coupling cavity and the silicon column; a first coupling cavity electrode and a second coupling cavity electrode are arranged at the top of the second active coupling cavity; the first coupling cavity electrode and the second coupling cavity electrode are both in semi-circular structures and are arranged oppositely; the first active coupling cavity and the second active coupling cavity are coupled with each other.
2. The electrically tunable active coupled cavity laser of claim 1, wherein the first active coupled cavity and the second active coupled cavity are disk cavities with different diameters and are coupled to each other.
3. The electrically tunable active coupled cavity laser of claim 1, wherein the first coupled cavity electrode is connected to a first pin electrode via a first cantilever electrode; and the second coupling cavity electrode is connected with a second pin electrode through a second cantilever beam electrode.
4. An electrically regulated active coupled cavity laser according to claim 3, wherein the bottom of the first cantilever electrode is provided with a first cantilever support; a second cantilever beam support is arranged at the bottom of the second cantilever beam electrode; a first pin support is arranged at the bottom of the first pin electrode; a second pin support is arranged at the bottom of the second pin electrode; the first cantilever beam support, the second cantilever beam support, the first pin support and the second pin support are of an integral structure.
5. The electrically regulated, actively coupled cavity laser according to claim 4, wherein the bottom of the first cantilever support, the second cantilever support, the first lead support and the second lead support are provided with an aluminum nitride layer.
6. An electrically regulated, actively coupled cavity laser as claimed in claim 4, wherein said first and second pin supports are each fixed to the silicon substrate by means of a silicon pillar.
7. The electrically regulated active coupled cavity laser according to claim 4, wherein the first active coupled cavity, the second active coupled cavity, the first cantilever support, the second cantilever support, the first lead support and the second lead support are all GaN layers.
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