CN112087851A - Plasma discharge state monitoring method and plasma discharge system - Google Patents
Plasma discharge state monitoring method and plasma discharge system Download PDFInfo
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
- H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
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Abstract
The invention provides a plasma discharge state monitoring method and a plasma discharge system, wherein the method comprises the following steps: after radio frequency power is loaded on an inductive coupling coil, acquiring a voltage signal and a current signal of the inductive coupling coil; calculating a phase difference of the voltage signal and the current signal; and determining the current discharge state of the plasma according to the phase difference. The invention ensures the safety of the semiconductor manufacturing process.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a plasma discharge state monitoring method and a plasma discharge system.
Background
At present, the structure widely used in the conventional semiconductor manufacturing process for exciting the Plasma is an Inductively Coupled Plasma (ICP) structure, and the ICP can obtain high-density Plasma under a lower working pressure, and has a simple structure and low manufacturing cost. Due to the non-linear characteristic of the power absorbed by the plasma, the ICP discharge process is often accompanied by the capacitive coupling discharge, and the plasma generated by the capacitive coupling discharge is low-density plasma, which is not needed for the process.
To prevent wafer scrap and other losses due to discharge mode, it is becoming more important to monitor and maintain the ICP discharge state in an inductively coupled discharge.
In the prior art, OES (Optical Emission Spectroscopy) can be used for monitoring the discharge state of the plasma. The principle is that a specific spectral line generated by plasma discharge in the process is collected and judged by a threshold control method or a slope control method.
FIG. 1 is a schematic diagram of an OES monitoring method of a typical semiconductor etching apparatus. The device generally comprises a reaction chamber 4 ', an electrostatic chuck 6 ' and an inductive coupling coil 3 ', wherein the electrostatic chuck 6 ' is positioned in the reaction chamber 4 ', is connected with a lower matcher 8 ' and a lower radio frequency source 9 ', and a wafer 5 ' is arranged on the electrostatic chuck 6 '. The inductive coupling coil 3 ' is positioned above a medium window 12 ' above the reaction chamber 4 ' and is connected with the matcher 2 ' and the radio frequency source 1 ', and the spectrometer 7 ' collects the plasma luminous intensity of the reaction chamber 4 ' through an optical fiber.
The typical OES method for monitoring the plasma state not only needs expensive spectrometer equipment, but also has more complex control system and control algorithm and lower spectral resolution; in addition, when the plasma discharge is in capacitive discharge, the plasma luminous intensity is weak, and spectral line acquisition is difficult, so that accurate judgment is influenced. Therefore, OES monitoring methods are not suitable from both convenience and accuracy of process monitoring.
Furthermore, the plasma discharge state can be monitored by monitoring the positions of two adjusting capacitors in the matcher. However, the judgment result is influenced by the fact that the measuring range of the adjusting capacitor is too large or too small; and when the radio frequency hardware system is abnormal, for example, the inductive coupling coil is ignited, the position of the capacitor can be adjusted, so that the risk of misjudgment exists by detecting the preset position of the adjusting capacitor in the matcher.
Disclosure of Invention
The present invention is directed to at least one of the technical problems of the prior art, and provides a plasma discharge state monitoring method and a plasma discharge system for improving the safety of the semiconductor process.
To achieve the object of the present invention, there is provided a plasma discharge state monitoring method, the method comprising:
after radio frequency power is loaded on an inductive coupling coil, acquiring a voltage signal and a current signal of the inductive coupling coil;
calculating a phase difference of the voltage signal and the current signal;
and determining the current discharge state of the plasma according to the phase difference.
Preferably, the determining the current discharge state of the plasma from the phase difference comprises:
judging whether the phase difference is larger than a first phase and smaller than or equal to a second phase, wherein the first phase is smaller than the second phase;
if yes, determining that the current plasma is in an inductive discharge state; if not, judging whether the phase difference is larger than a third phase and smaller than or equal to a first phase, wherein the third phase is smaller than the first phase;
if yes, the plasma is determined to be in a capacitive discharge state at present.
Preferably, after determining that the current plasma is in the capacitive discharge state, the method further comprises:
increasing the capacitance value of a first variable capacitor connected between a generator and the ground by a first set amount, decreasing the capacitance value of a second variable capacitor connected between the generator and the inductive coupling coil by a second set amount, and returning to the step of acquiring the voltage signal and the current signal of the inductive coupling coil to continue the execution;
the generator is used for generating the radio frequency power.
Preferably, after determining that the current plasma is in the inductive discharge state,
and returning to the step of obtaining the voltage signal and the current signal of the inductive coupling coil to continue executing.
Preferably, the first phase is 40 ° and the second phase is 90 °.
Preferably, the third phase is-90 °.
Preferably, the phase difference is calculated using the following formula:
p ═ UIcos θ; wherein, U is a voltage signal, I is a current signal, P is a radio frequency power, and theta is the phase difference.
A plasma discharge system, comprising: generator, inductive coupling coil and reaction chamber, inductive coupling coil is located the dielectric window of reaction chamber top and with the generator is connected, the system still includes: a current sensor, a voltage sensor, and a processor;
the current sensor is used for acquiring a current signal of the inductive coupling coil;
the voltage sensor is used for acquiring a voltage signal of the inductive coupling coil;
the processor is used for acquiring the voltage signal and the current signal after judging that the generator loads radio frequency power to the inductive coupling coil; calculating a phase difference of the voltage signal and the current signal; and determining the current discharge state of the plasma according to the phase difference.
Preferably, the discharge state includes: capacitive discharge state and inductive discharge state;
the system further comprises:
a matcher positioned between the generator and the inductive coupling coil;
the matcher comprises: the first variable capacitor is connected between a generator and the ground, and the second variable capacitor is connected between the generator and the inductive coupling coil; the first adjuster and the second adjuster are respectively used for adjusting the first variable capacitor and the second variable capacitor;
the processor is configured to increase a capacitance value of the first variable capacitor by a first set amount via the first regulator and decrease a capacitance value of the second variable capacitor by a second set amount via the second regulator when the plasma is in a capacitive discharge state.
Preferably, the processor is further configured to continue to acquire the voltage signal and the current signal when the plasma is in an inductive discharge state; calculating a phase difference of the voltage signal and the current signal; and determining the current discharge state of the plasma according to the phase difference.
Preferably, the capacitance value of the first variable capacitor is in a range of (420 pF-570 pF) or (825 pF-1095 pF).
Preferably, the second variable capacitor has a capacitance value ranging from (230pF to 320pF) or (410pF to 455 pF).
The invention has the following beneficial effects:
according to the plasma discharge state monitoring method and the plasma discharge system, after radio frequency power is loaded on the inductive coupling coil, a voltage signal and a current signal of the inductive coupling coil are obtained; calculating the phase difference of the voltage signal and the current signal; and determining the current discharge state of the plasma according to the phase difference. According to the characteristic of the inherent potential difference between the voltage signal and the current signal after the radio frequency power is loaded on the inductive coupling coil, the current discharge state of the plasma is determined, so that the semiconductor manufacturing process is effectively monitored, and the safety of the semiconductor manufacturing process is guaranteed.
Drawings
FIG. 1 is a schematic diagram of an OES monitoring configuration of the prior art;
FIG. 2 is a flow chart of a method for monitoring a plasma discharge state according to an embodiment of the present invention;
FIG. 3 is another flow chart of a method for monitoring a plasma discharge state according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a plasma discharge system according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a connection structure of the matcher and the generator according to an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following describes the plasma discharge state monitoring method and the plasma discharge system provided by the present invention in detail with reference to the accompanying drawings.
Example one
As shown in fig. 2, a flowchart of a plasma discharge state monitoring method according to an embodiment of the present invention is provided, where the plasma discharge state monitoring method according to the embodiment includes the following steps:
step 101: and after the radio frequency power is loaded on the inductive coupling coil, acquiring a voltage signal and a current signal of the inductive coupling coil.
Specifically, the voltage signal and the current signal are both in an alternating form because the voltage signal and the current signal have a certain phase value and also have a phase difference therebetween.
Step 102: the phase difference of the voltage signal and the current signal is calculated.
Specifically, the phase difference is calculated using the following formula:
p ═ UIcos θ; wherein, U is a voltage signal, I is a current signal, P is a radio frequency power, and theta is the phase difference.
Step 103: and determining the current discharge state of the plasma according to the phase difference.
Specifically, the principle of judging the plasma discharge state is as follows: and judging the plasma discharge state by monitoring the phase difference. The discharge state includes: a capacitive discharge state and an inductive discharge state, wherein the capacitive discharge state refers to that the plasma generated by the inductive coupling coil is inductive; the capacitive discharge state means that the plasma generated by the inductive coupling coil is capacitive; under the inductive discharge state of the plasma, voltage signals at two ends of the inductor flow through a current signal pi/2 of the inductor in advance, and the phase difference is close to 90 degrees because the coil has a certain capacitance and is not a pure inductive body, and the phase difference of the plasma is very small under different process conditions under the inductive discharge; when the plasma is in a capacitive discharge state, the capacitive reactance of the capacitor is inversely proportional to the angular velocity, the voltage signals at the two ends of the capacitor lag and flow through a capacitor current signal pi/2, the phase angle is-90 degrees, and the phase difference deviates from-90 degrees due to the existence of the inductance coil and the plasma and the non-pure capacitive body. The judgment threshold value for judging the phase difference between the plasma inductive discharge and the capacitive discharge can be measured according to different machine experiments. Firstly, judging the state of the plasma by monitoring the magnitude of the phase difference; if the phase difference deviates from 90 degrees, even a negative angle, the plasma is in a capacitive discharge.
Specifically, the current discharge state of the plasma is determined by the phase difference, i.e. step 103 comprises the following steps:
step 1031: judging whether the phase difference is larger than the first phase and smaller than or equal to the second phase, wherein the first phase is smaller than the second phase; if yes, go to step 1032; otherwise, step 1033 is performed.
Specifically, the first phase is 40 ° and the second phase is 90 °. The values of the first phase and the second phase may be different according to different plasma processing equipment, and can be measured through experiments, but the difference is not large.
Step 1032: and determining that the plasma is in an inductive discharge state currently.
Step 1033: judging whether the phase difference is greater than a third phase and less than or equal to the first phase, wherein the third phase is less than the first phase; if yes, go to step 1034.
In particular, the third phase is-90 °. Also, the third phase may deviate by a certain amount around-90 °, which can be obtained experimentally.
Step 1034: and determining that the plasma is in a capacitive discharge state currently.
The plasma discharge state monitoring method provided by the invention comprises the steps of loading radio frequency power on an inductive coupling coil, and then obtaining a voltage signal and a current signal of the inductive coupling coil; calculating the phase difference of the voltage signal and the current signal; and determining the current discharge state of the plasma according to the phase difference. According to the characteristic of the inherent potential difference between the voltage signal and the current signal after the radio frequency power is loaded on the inductive coupling coil, the current discharge state of the plasma is determined, so that the semiconductor manufacturing process is effectively monitored, and the safety of the semiconductor manufacturing process is guaranteed.
Example two
As shown in fig. 3, another flowchart of a plasma discharge state monitoring method according to an embodiment of the present invention is provided, where the plasma discharge state monitoring method according to the embodiment includes the following steps:
step 201: and after the radio frequency power is loaded on the inductive coupling coil, acquiring a voltage signal and a current signal of the inductive coupling coil.
Step 202: the phase difference of the voltage signal and the current signal is calculated.
Step 203: judging whether the phase difference is larger than the first phase and smaller than or equal to the second phase, wherein the first phase is smaller than the second phase; if yes, go to step 204; otherwise step 205 is performed.
Step 204: and determining that the plasma is in the inductive discharge state currently, and returning to continue executing the step 201.
Step 205: judging whether the phase difference is greater than a third phase and less than or equal to the first phase, wherein the third phase is less than the first phase; if yes, go to step 206.
Step 206: and determining that the plasma is in a capacitive discharge state currently.
Step 207: the capacitance value of a first variable capacitor connected between the generator and ground is increased by a first set amount and the capacitance value of a second variable capacitor connected between the generator and the inductive coupling coil is decreased by a second set amount, and the process returns to step 201.
Specifically, the first set amount and the second set amount can be set according to system adjustment requirements, for example, the first set amount is 20pF, and the second set amount is 10 pF. Of course, when the plasma is required to be quickly switched from the capacitive discharge state to the inductive discharge state, the first set amount and the second set amount may be increased appropriately.
Specifically, the plasma discharge state control method comprises the following steps: can pass throughThe impedance determination reaction chamber is loaded with radio frequency power. The plasma discharge is capacitive discharge, the current sensor and the voltage sensor transmit output quantity to the processor, and the processor adjusts the first variable capacitor C through the adjuster1A second variable capacitor C2. When the plasma is in capacitive discharge, the first variable capacitor C1The position is close to the lower limit value of the capacitance range, and a second variable capacitor C2The position is close to the upper limit value of the capacitance range. Therefore, the first variable capacitor C is required to be used1The position is adjusted upwards from the lower limit value of the measuring range, and a second variable capacitor C2The position is adjusted downwards from the upper limit value of the measuring range, and finally the plasma is in inductive discharge by adjusting the position of the capacitor.
In the plasma discharge state monitoring method provided by the embodiment of the present invention, the discharge state of the plasma includes: capacitive discharge state and inductive discharge state; after the current plasma is determined to be in an inductive discharge state, returning to continuously obtain the voltage and the current of the inductive coupling coil to continuously monitor the discharge state of the plasma; after the current plasma is determined to be in the capacitive discharge state, the plasma can be finally in the inductive discharge state by adjusting the capacitance values of the first variable capacitor and the second variable capacitor.
EXAMPLE III
In view of the above plasma discharge state monitoring method, the present invention further provides a plasma discharge system, as shown in fig. 4, the plasma discharge system of this embodiment includes: generator 1, inductive coupling coil 2 and reaction chamber 3, inductive coupling coil 2 is located the dielectric window 31 of reaction chamber 3 top and is connected with generator 1, still includes: a current sensor 4, a voltage sensor 5, and a processor 6; the current sensor 4 is used for acquiring a current signal of the inductive coupling coil 2; the voltage sensor 5 is used for acquiring a voltage signal of the inductive coupling coil 2; the processor 6 is used for acquiring a voltage signal and a current signal after judging that the generator 1 loads radio frequency power to the inductive coupling coil 2; calculating the phase difference of the voltage signal and the current signal; and determining the current discharge state of the plasma according to the phase difference.
In the plasma discharge system provided by the embodiment of the invention, after the processor loads the radio frequency power on the inductive coupling coil, the voltage signal and the current signal of the inductive coupling coil are obtained; calculating the phase difference of the voltage signal and the current signal; and determining the current discharge state of the plasma according to the phase difference. According to the characteristic of the inherent potential difference between the voltage signal and the current signal after the radio frequency power is loaded on the inductive coupling coil, the current discharge state of the plasma is determined, so that the semiconductor manufacturing process is effectively monitored, and the safety of the semiconductor manufacturing process is guaranteed.
Further, in another embodiment of the present invention, the discharge state includes: capacitive discharge state and inductive discharge state; as shown in fig. 5, the plasma discharge system further includes: a matcher 7 positioned between the generator 1 and the inductive coupling coil 2. In fig. 5, the current sensor 4 and the voltage sensor 5 are located in the matching unit 7.
The matcher 8 includes: a first regulator M1, a second regulator M2, a first variable capacitor C1And a second variable capacitor C2A first variable capacitor C1A second variable capacitor C connected between the generator 1 and ground2Is connected between the generator 1 and the inductive coupling coil 2; the first adjuster M1 and the second adjuster M2 are used for adjusting the first variable capacitor C1And a second variable capacitance C2。
The processor 6 is used for adjusting the first variable capacitor C by the first adjuster M1 when the plasma is in the capacitive discharge state1Is increased by a first set amount and the second variable capacitance C is adjusted by the second adjuster M22Is decreased by a second set amount.
Specifically, the first set amount and the second set amount can be set according to system adjustment requirements, for example, the first set amount is 20pF, and the second set amount is 10 pF. Of course, when the plasma is required to be quickly switched from the capacitive discharge state to the inductive discharge state, the first set amount and the second set amount may be increased appropriately.
Specifically, the plasma discharge state control method comprises the following steps: the loading of the reaction chamber with rf power can be determined by impedance. The plasma discharge is capacitive discharge, the current sensor and the voltage sensor transmit output quantity to the processor, and the processor adjusts the first variable capacitor C through the adjuster1A second variable capacitor C2. When the plasma is in capacitive discharge, the first variable capacitor C1The position is close to the lower limit value of the capacitance range, and a second variable capacitor C2The position is close to the upper limit value of the capacitance range. Therefore, the first variable capacitor C is required to be used1The position is adjusted upwards from the lower limit value of the measuring range, and a second variable capacitor C2The position is adjusted downwards from the upper limit value of the measuring range, and finally the plasma is in inductive discharge by adjusting the position of the capacitor.
Further, the first variable capacitor C is achieved by adjusting the first adjuster M1 and the second adjuster M21A second variable capacitor C2The purpose of automatic adjustment. If the phase theta is close to 90 degrees, the plasma discharge is inductive discharge, and the process is continued; if the phase theta is far from 90 degrees, the plasma discharge is capacitive discharge, the current sensor and the voltage sensor transmit the voltage and the current to the processor, and the processor transmits the first variable capacitor C to the processor through the first regulator M11The position is adjusted upward from the lower limit value to a first set value, and the second variable capacitor C is adjusted by the second adjuster M22And the position is adjusted downwards from the upper position limit value, and in the capacitance adjusting process, the processor continuously acquires the voltage and the current acquired by the current sensor and the voltage sensor and calculates the phase difference until the plasma discharge is inductive discharge.
Further, in another embodiment of the present invention, the processor 6 is further configured to continue to acquire the voltage signal and the current signal when the plasma is in the inductive discharge state; calculating the phase difference of the voltage signal and the current signal; and determining the current discharge state of the plasma according to the phase difference.
Specifically, the first variable capacitor C1The capacitance value range of (420 pF) to (570 pF) or (825 pF) to (1095 pF).
In particular, the second variable capacitance C2The tolerance range of (1) is (230 pF-320 pF) or (410 pF-455 pF).
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (12)
1. A method for monitoring a plasma discharge condition, the method comprising:
after radio frequency power is loaded on an inductive coupling coil, acquiring a voltage signal and a current signal of the inductive coupling coil;
calculating a phase difference of the voltage signal and the current signal;
and determining the current discharge state of the plasma according to the phase difference.
2. The method of claim 1, wherein determining the current discharge state of the plasma from the phase difference comprises:
judging whether the phase difference is larger than a first phase and smaller than or equal to a second phase, wherein the first phase is smaller than the second phase;
if yes, determining that the current plasma is in an inductive discharge state; if not, judging whether the phase difference is larger than a third phase and smaller than or equal to a first phase, wherein the third phase is smaller than the first phase;
if yes, the plasma is determined to be in a capacitive discharge state at present.
3. The method of claim 2, wherein after determining that the current plasma is in a capacitive discharge state, the method further comprises:
increasing the capacitance value of a first variable capacitor connected between a generator and the ground by a first set amount, decreasing the capacitance value of a second variable capacitor connected between the generator and the inductive coupling coil by a second set amount, and returning to the step of acquiring the voltage signal and the current signal of the inductive coupling coil to continue the execution;
the generator is used for generating the radio frequency power.
4. The method of claim 2, wherein the step of returning to obtain the voltage signal and the current signal of the inductive coupling coil is continued after determining that the current plasma is in an inductive discharge state.
5. A method for monitoring a state of a plasma discharge according to any of claims 2-4, wherein the first phase is 40 ° and the second phase is 90 °.
6. The plasma discharge state monitoring method according to claim 5, wherein the third phase is-90 °.
7. The plasma discharge state monitoring method according to claim 1, wherein the phase difference is calculated using the following formula:
p ═ UIcos θ; wherein, U is a voltage signal, I is a current signal, P is a radio frequency power, and theta is the phase difference.
8. A plasma discharge system, comprising: generator, inductive coupling coil and reaction chamber, inductive coupling coil be located the dielectric window of reaction chamber top and with the generator is connected, its characterized in that, the system still includes: a current sensor, a voltage sensor, and a processor;
the current sensor is used for acquiring a current signal of the inductive coupling coil;
the voltage sensor is used for acquiring a voltage signal of the inductive coupling coil;
the processor is used for acquiring the voltage signal and the current signal after judging that the generator loads radio frequency power to the inductive coupling coil; calculating a phase difference of the voltage signal and the current signal; and determining the current discharge state of the plasma according to the phase difference.
9. The plasma discharge system of claim 8, wherein the discharge state comprises: capacitive discharge state and inductive discharge state;
the system further comprises:
a matcher positioned between the generator and the inductive coupling coil;
the matcher comprises: the first variable capacitor is connected between a generator and the ground, and the second variable capacitor is connected between the generator and the inductive coupling coil; the first adjuster and the second adjuster are respectively used for adjusting the first variable capacitor and the second variable capacitor;
the processor is configured to increase a capacitance value of the first variable capacitor by a first set amount via the first regulator and decrease a capacitance value of the second variable capacitor by a second set amount via the second regulator when the plasma is in a capacitive discharge state.
10. The plasma discharge system of claim 9, wherein the processor is further configured to continue to obtain the voltage signal and the current signal while the plasma is in the inductive discharge state; calculating a phase difference of the voltage signal and the current signal; and determining the current discharge state of the plasma according to the phase difference.
11. The plasma discharge system of claim 10, wherein the first variable capacitance has a capacitance in the range of (420 pF-570 pF) or (825 pF-1095 pF).
12. The plasma discharge system of claim 11, wherein the second variable capacitance has a capacitance in a range of (230 pF-320 pF) or (410 pF-455 pF).
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115696709A (en) * | 2022-12-28 | 2023-02-03 | 江苏奥文仪器科技有限公司 | Device for monitoring plasma stability in discharge chamber of radio frequency glow discharge spectrometer |
| CN116347735A (en) * | 2023-05-06 | 2023-06-27 | 中国长江三峡集团有限公司 | Plasma discharge stability control method, system, computer equipment and medium |
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