CN112086563B - Quantum dot light-emitting diode and preparation method thereof - Google Patents
Quantum dot light-emitting diode and preparation method thereof Download PDFInfo
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof. A quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer, wherein the quantum dot light-emitting layer is positioned between the anode and the cathode, an electron transmission layer is arranged between the cathode and the quantum dot light-emitting layer, a material layer containing polyolefin is arranged between the electron transmission layer and the quantum dot light-emitting layer, and the polyolefin is mutually crosslinked to form a net structure. In the quantum dot light-emitting diode provided by the invention, a special material layer is arranged between the electron transmission layer and the quantum dot light-emitting layer, and the material layer can reduce the electron injection rate of the cathode of the device and adjust the distribution of quantum dot particles, so that the interface between the quantum dot light-emitting layer and the electron transmission layer is optimized, thereby improving the efficiency and the service life of the device.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a quantum dot light-emitting diode and a preparation method thereof.
Background
In recent years, with the rapid development of display technologies, quantum dot light emitting diodes (QLEDs) having semiconductor Quantum Dot (QDs) materials as light emitting layers have received much attention. The quantum dot light-emitting diode has the advantages of high color purity, high luminous efficiency, adjustable luminous color, stable device and the like, so that the quantum dot light-emitting diode has wide application prospect in the fields of flat panel display, solid state lighting and the like.
Currently, a QLED generally adopts a sandwich structure, and a device includes an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and a cathode; wherein, the luminescent layer, namely the quantum dot luminescent layer, is composed of a layer of nano particles, and the problems existing at present are as follows: if the concentration of the nano particles is too low, a compact quantum dot layer cannot be formed, namely holes appear, and leakage current can be caused; if the concentration of the nanoparticles is too high, the accumulation of the nanoparticles, i.e. cluster generation, may occur, which may result in Dexter energy transfer (the Dexter energy transfer belongs to non-radiative energy transfer), and the light emitting efficiency of the device is reduced. Therefore, how to prepare a compact and uniform quantum dot light-emitting layer is an important research direction for improving the light-emitting efficiency of the QLED. In addition, in order to improve the efficiency of the device and enable carriers to be compounded in the quantum dot light emitting layer, an electron transport layer is usually adopted at present to block holes and adjust the electron injection rate, but interface defects are easy to occur between the electron transport layer and the quantum dot light emitting layer, so that the efficiency is reduced due to non-radiative compounding.
Therefore, the prior art is in need of improvement.
Disclosure of Invention
The invention aims to provide a quantum dot light-emitting diode and a preparation method thereof, and aims to solve the technical problems that in the existing device, a quantum dot light-emitting layer is not uniform, and an interface defect exists between the quantum dot light-emitting layer and an electron transport layer, so that the light-emitting performance of the device is influenced.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a quantum dot light-emitting diode, which comprises an anode, a cathode and a quantum dot light-emitting layer positioned between the anode and the cathode, wherein an electron transmission layer is arranged between the cathode and the quantum dot light-emitting layer, a material layer containing polyolefin is arranged between the electron transmission layer and the quantum dot light-emitting layer, and the polyolefin is mutually crosslinked to form a net structure.
In the quantum dot light-emitting diode provided by the invention, a special material layer is arranged between the electron transmission layer and the quantum dot light-emitting layer, the material layer contains polyolefin which is cross-linked to form a network structure, and the network structure formed by the polyolefin can reduce the electron injection rate of the cathode of the device, thereby balancing the injection of hole electrons, inhibiting fluorescence quenching, reducing energy consumption and improving the efficiency of the device, and can adjust the distribution of quantum dot particles, so that the quantum dot particles are uniformly distributed in the meshes of the network structure, thereby inhibiting the occurrence of quantum dot clustering phenomenon, enabling the quantum dot light-emitting layer to be uniform and compact, and reducing leakage current; moreover, the quantum dot light-emitting layer is uniform and compact, and the film forming quality is high, so that the interface between the quantum dot light-emitting layer and the electron transmission layer is optimized, the coverage rate of quantum dots on the surface of the electron transmission layer is improved, the interface defects are reduced, the interface stability is improved, the non-radiative recombination is weakened, and the efficiency and the service life of the device are further improved.
The invention also provides a preparation method of the quantum dot light-emitting diode, which comprises the following steps:
when the quantum dot light-emitting diode is an upright device,
providing an anode substrate;
preparing a quantum dot light-emitting layer on the anode substrate, and then preparing a material layer containing polyolefin on the surface of the quantum dot light-emitting layer; or,
when the quantum dot light-emitting diode is an inversion device,
providing a cathode substrate;
preparing a material layer containing polyolefin on the cathode substrate, and then preparing a quantum dot light-emitting layer on the surface of the material layer;
wherein the polyolefins are cross-linked to each other to form a network structure.
The invention provides a method for preparing quantum dot light-emitting diode, which comprises preparing a special material layer containing polyolefin cross-linked to form a network structure between an electron transmission layer and a quantum dot light-emitting layer (when the quantum dot light-emitting diode is a positive device, the material layer is prepared on the quantum dot light-emitting layer, when the quantum dot light-emitting diode is an inverted device, the material layer is prepared on the electron transmission layer), the material layer can not only reduce the electron injection rate of the cathode of the device, but also adjust the distribution of quantum dot particles, so that the quantum dot particles are uniformly distributed in the mesh of the mesh structure, thereby inhibiting the occurrence of quantum dot cluster phenomenon, enabling the quantum dot light-emitting layer to be uniform and compact, reducing leakage current, simultaneously reducing the interface defect between the quantum dot light-emitting layer and the electron transmission layer, improving the interface stability, and weakening non-radiative recombination, finally, the efficiency and the service life of the device obtained by the preparation method are obviously improved.
Drawings
Fig. 1 is a schematic flow chart of a method for manufacturing a quantum dot light-emitting diode according to an embodiment of the invention; wherein, a is a flow chart for preparing the positive device, and b is a flow chart for preparing the reverse device;
FIG. 2 is a diagram illustrating an effect of forming a mesh structure of a material layer in a quantum dot light emitting diode according to an embodiment of the invention;
fig. 3 is a schematic structural diagram of a quantum dot light-emitting diode according to embodiment 1 of the present invention;
fig. 4 is a schematic structural diagram of a quantum dot light emitting diode in embodiment 2 of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
On one hand, the embodiment of the invention provides a quantum dot light-emitting diode, which comprises an anode, a cathode and a quantum dot light-emitting layer positioned between the anode and the cathode, wherein an electron transmission layer is arranged between the cathode and the quantum dot light-emitting layer, a material layer containing polyolefin is arranged between the electron transmission layer and the quantum dot light-emitting layer, and the polyolefin is mutually crosslinked to form a net structure.
In the quantum dot light-emitting diode provided by the embodiment of the invention, a special material layer is arranged between the electron transmission layer and the quantum dot light-emitting layer, the material layer contains polyolefin which is cross-linked to form a network structure, and the network structure formed by the polyolefin can reduce the electron injection rate of the cathode of the device, thereby balancing the injection of hole electrons, inhibiting fluorescence quenching, reducing energy consumption and improving the efficiency of the device, and can adjust the distribution of quantum dot particles, so that the quantum dot particles are uniformly distributed in the meshes of the network structure, thereby inhibiting the occurrence of quantum dot clustering phenomenon, enabling the quantum dot light-emitting layer to be uniform and compact, and reducing leakage current; moreover, the quantum dot light-emitting layer is uniform and compact, and the film forming quality is high, so that the interface between the quantum dot light-emitting layer and the electron transmission layer is optimized, the coverage rate of quantum dots on the surface of the electron transmission layer is improved, the interface defects are reduced, the interface stability is improved, the non-radiative recombination is weakened, and the efficiency and the service life of the device are further improved.
In one embodiment, a material layer composed of cross-linked polyolefin is disposed between the electron transport layer and the quantum dot light emitting layer of the quantum dot light emitting diode. Optionally, the polyolefin is selected from at least one of polyethylene and polypropylene. The polyolefin in the material layer may comprise some homologues of polyethylene, with polyethylene being preferred in embodiments of the invention. The polyethylene is insulating, is extremely stable, has good chemical resistance and thermal stability, and can play a role in inhibiting electron injection so as to balance charge injection; the other functional layer materials are not corroded and dissolved after being prepared, and the properties can be kept stable after the heat treatment.
In one embodiment, the polyolefin is crosslinked to form a network structure in which the quantum dot particles in the quantum dot light-emitting layer are dispersed. Specifically, the polyolefin in the quantum dot light-emitting diode is crosslinked with each other to form a mesh size in a mesh structure of 30-100 nm; the general size of quantum dot particles is 3-10nm, and the size of meshes is 30-100nm, so that the quantum dot particles can be better and uniformly distributed in the meshes, the clustering phenomenon can be more effectively inhibited, a quantum dot light emitting layer is uniform and compact, leakage current is reduced, Dexter energy transfer is weakened, and the efficiency and the service life of a device are improved.
In one embodiment, the thickness of the material layer in the quantum dot light emitting diode is 30-60 nm.
In one embodiment, an electron injection layer is disposed between the cathode and the electron transport layer; and a hole function layer, such as a hole transport layer, or a hole injection layer and a hole transport layer, is arranged between the anode and the quantum dot light-emitting layer.
On the other hand, the embodiment of the invention also provides a preparation method of the quantum dot light-emitting diode, which comprises the following steps:
as shown in fig. 1a, when the qd-led is a forward device,
s011: providing an anode substrate;
s012: preparing a quantum dot light-emitting layer on the anode substrate, and then preparing a material layer containing polyolefin on the surface of the quantum dot light-emitting layer;
alternatively, as shown in fig. 1b, when the quantum dot light emitting diode is an inversion device,
s021: providing a cathode substrate;
s022: preparing a material layer containing polyolefin on the cathode substrate, and then preparing a quantum dot light-emitting layer on the surface of the material layer;
wherein the polyolefins are cross-linked to each other to form a network structure.
In the preparation method of the quantum dot light-emitting diode provided by the embodiment of the invention, a special material layer containing polyolefin which is crosslinked with each other to form a network structure is prepared between the electron transmission layer and the quantum dot light-emitting layer, the material layer can reduce the electron injection rate of a cathode of the device, can adjust the distribution of quantum dot particles, and enables the quantum dot particles to be uniformly distributed in meshes of the network structure, so that the occurrence of quantum dot clustering phenomenon is inhibited, the quantum dot light-emitting layer is uniform and compact, the leakage current is reduced, the interface defect between the quantum dot light-emitting layer and the electron transmission layer can be reduced, the interface stability is improved, the non-radiative recombination is weakened, and finally the efficiency and the service life of the device obtained by the preparation method are obviously improved.
Specifically, in one implementation, the qd-led is an orthotype device, and the material layer is prepared on the qd-light layer, that is, step S012 is: preparing a quantum dot light-emitting layer on the anode substrate, and then preparing a material layer containing polyolefin on the surface of the quantum dot light-emitting layer; the substrate is an anode substrate, a hole function layer (such as a hole transport layer) can be arranged on the surface of the anode substrate, the quantum dot light-emitting layer is prepared on the surface of the hole function layer, then a material layer containing polyolefin is prepared on the surface of the quantum dot light-emitting layer, an electron transport layer is prepared on the surface of the subsequent material layer, and a cathode is further prepared on the surface of the electron transport layer.
In another embodiment, the quantum dot light emitting diode is an inversion device, and the material layer is prepared on the electron transport layer, that is, step S022 is: preparing a material layer containing polyolefin on the cathode substrate, and then preparing a quantum dot light-emitting layer on the surface of the material layer; the substrate is a cathode substrate, an electron transport layer can be arranged on the surface of the cathode substrate, the material layer is prepared on the surface of the electron transport layer, then a quantum dot light-emitting layer is prepared on the surface of the material layer containing polyolefin, a hole function layer (such as a hole transport layer) is prepared on the surface of the subsequent quantum dot light-emitting layer, and an anode is further prepared on the surface of the hole function layer. In the positive or negative type devices, the polyolefins are cross-linked to each other to form a network structure.
In the method for manufacturing a quantum dot light emitting diode according to the embodiment of the present invention, the quantum dot light emitting diode is an inversion type device, and the step of manufacturing the material layer on the cathode substrate includes:
preparing a mixed solution containing the polyolefin and the photoinitiator, depositing the mixed solution on the cathode substrate, and then performing ultraviolet irradiation treatment.
Under the condition of ultraviolet light, polyolefin is crosslinked under the action of an initiator, taking Polyethylene (PE) and Benzophenone (BP) as examples, the crosslinking process is as follows:
(1) when BP absorbs ultraviolet photon and transits to singlet excited state, then the BP is rapidly relaxed into triplet excited state through inside, as shown in the following:
(2)(BP)*abstraction of a primary, secondary or tertiary hydrogen from the PE chain forms a macromolecular radical (P. cndot.) which itself forms a semipinacol radical (K. cndot.) as follows:
the method comprises the following specific steps:
(3) when these alkyl radicals are complexed with each other, various types of H-type crosslinking sites are formed, and at the same time, these alkyl radicals form Y-type crosslinking sites through an addition reaction with the terminal double bonds of the polyethylene, as shown below:
finally, the cross-linked polyethylene is formed by ultraviolet irradiation, and the material layer of the net structure is formed, as shown in fig. 2.
In the step process of the material layer, the concentration of the polyolefin in the prepared mixed solution is 5-10 mg/ml; the mass fraction of the initiator in the mixed solution is 1.5-3%, and the initiated crosslinking effect within the mass fraction range is optimal; wherein the polyolefin in the mixed solution is selected from at least one of polyethylene and polypropylene; the initiator is at least one selected from Benzophenone (BP), dicumyl peroxide (DCP), dimethyldiphenylbutane (DMDPB), anthraquinone, benzoin and acetophenone derivatives.
In an embodiment, the method of depositing the mixed solution on the substrate may be spin coating, and the spin coating speed is 3000-.
In one embodiment, the wavelength of the ultraviolet light in the ultraviolet light irradiation treatment is 190-300 nm; the time of the ultraviolet irradiation treatment is 1-2 min. In this wavelength and time range, crosslinked polyethylene with a network structure can be obtained better.
Further, after the ultraviolet light irradiation treatment, a heating treatment step is further included. The heating treatment can evaporate the solvent in the mixed solution to facilitate the preparation of a subsequent functional layer, and optionally, the temperature of the heating treatment is 60-100 ℃; the time of the heating treatment is 5-15 min.
In the embodiment of the invention, when the quantum dot light-emitting diode is an upright device, the material layer is prepared on the quantum dot light-emitting layer (at this time, the substrate, the anode and the quantum dot light-emitting layer are sequentially arranged from bottom to top), then the electron transport layer is prepared on the material layer, and finally the cathode is prepared on the electron transport layer. When the quantum dot light-emitting diode is an inverted device, the material layer is prepared on the electron transmission layer (the substrate, the cathode and the electron transmission layer are sequentially arranged from bottom to top at the moment), then the quantum dot light-emitting layer is prepared on the material layer, and finally the anode is prepared on the quantum dot light-emitting layer. Optionally, a hole functional layer may be prepared between the anode and the quantum dot light emitting layer, and an electron injection layer may be prepared between the electron transport layer and the cathode.
Taking the preparation of the inverted QLED device as an example, the method comprises the following detailed steps:
the substrate with the bottom electrode is processed. Wherein the substrate may be a rigid substrate, such as glass, or a flexible substrate, such as PI. And manufacturing a bottom electrode on the substrate, for example, forming an ITO substrate. Then cleaning the patterned ITO substrate, and treating the cleaned ITO substrate with ultraviolet-ozone or oxygen plasma before depositing other functional layers so as to further remove organic matters attached to the surface of the ITO and improve the work function of the ITO;
placing the substrate in a nitrogen atmosphere, and depositing an electron transport layer on the surface of the substrate, wherein the electron transport layer can be made of a material with good electron transport property, such as ZnO and TiO which can be but are not limited to n-type2、Fe2O3、SnO2、Ta2O3One or more of AlZnO, ZnSnO, InSnO and the like. Preferably, the electron transport layer is made of n-type ZnO, and the preferred thickness of the electron transport layer is 10-60 nm;
preparing a crosslinked polyethylene layer on the electron transmission layer, wherein the film thickness is between 30 and 60nm, the concentration range of the polyethylene solution is between 5 and 10mg/ml, benzophenone serving as an initiator is added, the mass fraction of the initiator is between 1.5 and 3 percent, then carrying out ultraviolet irradiation on the crosslinked polyethylene layer, the ultraviolet wavelength is between 190 and 300nm, and the irradiation time is 1 to 2min, and finally obtaining crosslinked polyethylene with a net structure;
the quantum dots are deposited on the crosslinked polyethylene layer by spin coating or printing, and the semiconductor materials used for the quantum dot light emitting layer include, but are not limited to, nanocrystals of II-VI semiconductors such as CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, PbS, PbSe, PbTe and other binary, ternary, quaternary II-VI compounds;
and then depositing a hole transport layer on the surface of the quantum dot light emitting layer, the hole transport layer being selected from organic materials having good hole transport ability, such as but not limited to poly (9, 9-dioctylfluorene-co-bis-N, N-phenyl-1, 4-Phenylenediamine) (PFB), 4', 4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA), 4' -bis (9-Carbazol) Biphenyl (CBP), N ' -diphenyl-N, N ' -bis (3-methylphenyl) -1,1 ' -biphenyl-4, 4' -diamine (TPD), N ' -diphenyl-N, N ' - (1-naphthyl) -1,1 ' -biphenyl-4, 4' -diamine (NPB), doped graphene, preferably CBP;
preparing a hole injection layer, wherein the hole injection layer can be selected from inorganic materials with hole injection capability, including but not limited to doped or undoped MoOx、VOx、WOx、CrOx、CuO、MoS2、MoSe2、WS2、WSe2Or CuS, preferably MoOx；
And finally, placing the wafer in an evaporation bin, and thermally evaporating a layer of top electrode which can be Al, Ag, Au or Cu and the like through a mask plate, wherein the thickness of the top electrode is 60-120 nm, so that the QLED device is obtained.
The invention is described in further detail with reference to a part of the test results, which are described in detail below with reference to specific examples.
Example 1
A QLED device has a structure as shown in FIG. 3, and comprises, from bottom to top: substrate, transparent electrode (cathode), ZnO electron transport layer, crosslinked polyethylene layer, quantum dot light emitting layer, NPB hole transport layer, MoO3A hole injection layer and an Ag anode.
The preparation steps of the device are as follows:
firstly, placing a patterned ITO cathode substrate in acetone, washing liquor, deionized water and isopropanol in sequence for ultrasonic cleaning, wherein the ultrasonic cleaning lasts for about 15 minutes in each step. And after the ultrasonic treatment is finished, drying the ITO in a clean oven for later use.
And after the ITO cathode substrate is dried, treating the ITO surface for 5 minutes by using ultraviolet-ozone to further remove organic matters attached to the ITO surface and improve the work function of the ITO.
Then, placing the ITO cathode substrate subjected to the treatment in the previous step in a nitrogen atmosphere, spin-coating a ZnO electron transmission layer on the substrate, and after the deposition is finished, placing the wafer on a heating table at 80 ℃ to heat for 30 minutes, wherein the thickness of the wafer is 30 nm;
after the sheet is cooled, a layer of polyethylene solution (benzophenone with the mass fraction of 1.5 percent is mixed in the polyethylene solution as an initiator) is coated on the surface of the sheet in a spinning mode, the concentration is 5mg/ml, the rotating speed is 3000r/min, then the sheet is subjected to ultraviolet irradiation to enable polyethylene to be crosslinked, ultraviolet light with the wavelength of 254nm is adopted for irradiation for 1min, then the sheet is placed on a heating table at the temperature of 80 ℃ to be heated for 10 min, and the thickness of the obtained crosslinked polyethylene layer is 35 nm;
the quantum dot luminescent material is coated on the surface of the crosslinked polyethylene layer in a spinning mode, and the thickness of the quantum dot luminescent material is 20 nm. After the deposition in this step, the wafer was heated on a heating table at 80 ℃ for 10 minutes to remove the residual solvent;
evaporating a layer of hole transport layer material NPB, wherein the thickness of the layer is 10 nm;
then, a layer of hole injection layer material MoO is evaporated3The thickness of this layer is 30 nm;
and finally, placing the sheet on which the functional layers are deposited in an evaporation bin, and thermally evaporating a layer of silver as an anode through a mask plate, wherein the thickness of the silver is 80 nm. And completing the preparation of the device.
Example 2
A QLED device has a structure as shown in FIG. 4, and comprises, from bottom to top: substrate, transparent electrode (cathode), ZnO electron transport layer, crosslinked polyethylene layer, quantum dot light emitting layer, TPD hole transport layer, WO3A hole injection layer and an Al anode.
The preparation steps of the device are as follows:
firstly, placing a patterned ITO cathode substrate in acetone, washing liquor, deionized water and isopropanol in sequence for ultrasonic cleaning, wherein the ultrasonic cleaning lasts for about 15 minutes in each step. And after the ultrasonic treatment is finished, drying the ITO in a clean oven for later use.
And after the ITO substrate is dried, treating the ITO surface for 5 minutes by using ultraviolet-ozone to further remove organic matters attached to the ITO surface and improve the work function of the ITO.
Then, placing the ITO cathode substrate subjected to the treatment in the previous step in a nitrogen atmosphere, printing a ZnO electron transmission layer on the substrate, and after the deposition is finished, placing the wafer on a heating table at 80 ℃ to heat for 30 minutes, wherein the thickness of the wafer is 30 nm;
after the sheet is cooled, a layer of polyethylene solution (dicumyl peroxide with the mass fraction of 2% is mixed in the polyethylene solution as an initiator) is coated on the surface of the sheet in a spinning mode, the concentration is 8mg/ml, the rotating speed is 4000r/min, then the sheet is subjected to ultraviolet irradiation to enable polyethylene to be crosslinked, ultraviolet light with the wavelength of 254nm is adopted for irradiation for 2min, then the sheet is placed on a heating table at the temperature of 80 ℃ to be heated for 10 min, and the thickness of the obtained crosslinked polyethylene layer is 40 nm;
the quantum dot luminescent material is coated on the surface of the crosslinked polyethylene layer in a spinning mode, and the thickness of the quantum dot luminescent material is 20 nm. After the deposition in this step, the wafer was heated on a heating table at 80 ℃ for 10 minutes to remove the residual solvent;
evaporating a layer of hole transport layer material TPD, wherein the thickness of the layer is 10 nm;
then, a layer of hole injection layer material WO is evaporated3The thickness of this layer is 35 nm;
and finally, placing the sheet on which the functional layers are deposited in an evaporation bin, and thermally evaporating a layer of aluminum as an anode through a mask plate, wherein the thickness of the aluminum is 100 nm. And completing the preparation of the device.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (15)
1. A quantum dot light-emitting diode comprises an anode, a cathode and a quantum dot light-emitting layer positioned between the anode and the cathode, wherein an electron transmission layer is arranged between the cathode and the quantum dot light-emitting layer.
2. The quantum dot light-emitting diode of claim 1, wherein the material layer is composed of an inter-crosslinked polyolefin.
3. The quantum dot light-emitting diode of claim 1, wherein the polyolefin is selected from at least one of polyethylene and polypropylene.
4. The quantum dot light-emitting diode of claim 1, wherein the quantum dot particles in the quantum dot light-emitting layer are dispersed in a network structure formed by the polyolefin cross-linked with each other.
5. The qd-led of any one of claims 1 to 4, wherein an electron injection layer is disposed between the cathode and the electron transport layer.
6. The qd-led of any one of claims 1 to 4, wherein a hole functional layer is disposed between the anode and the qd-light emitting layer.
7. A preparation method of a quantum dot light-emitting diode is characterized by comprising the following steps:
when the quantum dot light-emitting diode is an upright device,
providing an anode substrate;
preparing a quantum dot light-emitting layer on the anode substrate, and then preparing a material layer containing polyolefin on the surface of the quantum dot light-emitting layer; or,
when the quantum dot light-emitting diode is an inversion device,
providing a cathode substrate;
preparing a material layer containing polyolefin on the cathode substrate, and then preparing a quantum dot light-emitting layer on the surface of the material layer;
wherein the polyolefins are cross-linked to each other to form a network structure.
8. The method of claim 7, wherein the step of preparing a material layer on the cathode substrate comprises:
preparing a mixed solution containing the polyolefin and the photoinitiator, depositing the mixed solution on the cathode substrate, and then performing ultraviolet irradiation treatment.
9. The method of claim 8, wherein the polyolefin concentration in the mixed solution is 5-10 mg/ml.
10. The method according to claim 8, wherein the initiator is present in the mixed solution in an amount of 1.5 to 3% by mass.
11. The method of claim 8, wherein the polyolefin in the mixed solution is at least one selected from the group consisting of polyethylene and polypropylene.
12. The method of claim 8, wherein the initiator in the mixed solution is at least one selected from the group consisting of benzophenone, dicumyl peroxide, dimethyldiphenylbutane, anthraquinone, benzoin, and acetophenone derivatives.
13. The method of claim 8, wherein the wavelength of the UV light during the UV light irradiation is 190-300nm, and the duration of the UV light irradiation is 1-2 min.
14. The method for manufacturing a quantum dot light-emitting diode according to any one of claims 8 to 13, further comprising a step of heating treatment after the ultraviolet light irradiation treatment.
15. The method of claim 14, wherein the temperature of the heat treatment is 60-100 ℃, and the time of the heat treatment is 5-15 min.
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