CN112082667A - Film platinum resistor temperature sensor and manufacturing method thereof - Google Patents

Abstract

A thin film platinum resistance temperature sensor and a method of manufacturing the same. The manufacturing method comprises the following steps: step S1, taking an armor wire, wherein the armor wire comprises an outer skin and an inner core, and carrying out primary annealing treatment on the armor wire; step S2, welding the film platinum to the tail end of the inner core of the armor wire to obtain a first intermediate assembly, and then carrying out secondary annealing treatment on the first intermediate assembly; step S3 of filling the ends of the armouring wires with magnesium oxide powder so that the thin film platinum is embedded by the magnesium oxide powder, then welding a base pad to the ends of the sheaths of the armouring wires so that the base pad closes the ends of the sheaths of the armouring wires, thus obtaining a second intermediate assembly, and then carrying out a third annealing treatment on the second intermediate assembly; in step S4, the second intermediate assembly is assembled with a connector to obtain the platinum film resistor temperature sensor. The insulation resistance of the film platinum resistance temperature sensor produced by the manufacturing method is more than 100M omega no matter at room temperature or high temperature.

Description

A kind of thin film platinum resistance temperature sensor and its manufacturing method

technical field

The invention relates to the technical field of temperature sensors, in particular to a thin-film platinum resistance temperature sensor and a manufacturing method thereof.

Background technique

Temperature sensor is a kind of sensor commonly used in life. With the development of science and technology, thin-film platinum resistance temperature sensor appears in people's field of vision. It overcomes the shortcomings of traditional temperature sensors, replaces the previous temperature sensors, and is widely used in various kinds of industries. At present, the insulation resistance of the thin-film platinum resistance temperature sensor obtained by the existing preparation method is usually small under high temperature conditions, especially under high temperature conditions above 400°C, the insulation resistance can only be guaranteed to be greater than 2MΩ at most. However, in the field of nuclear power applications, the insulation resistance of the temperature sensor is required to be greater than or equal to 100 MΩ when the temperature is up to 400 °C. Therefore, if you want to apply the thin-film platinum resistance temperature sensor to the nuclear power application field, it is necessary to improve the temperature of the thin-film platinum resistance. The performance of the insulation resistance of the sensor under high temperature conditions, that is, it is necessary to find out how to improve the insulation resistance of the thin film platinum resistance temperature sensor under high temperature conditions.

SUMMARY OF THE INVENTION

The technical problem to be solved by the present invention is to provide a method for manufacturing a thin film platinum resistance temperature sensor. The thin film platinum resistance temperature sensor produced by the manufacturing method has an insulation resistance of more than 100 MΩ at room temperature or high temperature.

Another technical problem to be solved by the present invention is to provide a thin-film platinum resistance temperature sensor produced by the above-mentioned manufacturing method.

In order to solve the above-mentioned technical problems, the technical solution adopted in the present invention is to provide a manufacturing method of a thin film platinum resistance temperature sensor, and the manufacturing method comprises the following steps:

Step S1, take an armored wire, the armored wire includes an outer skin and an inner core, and perform the first annealing treatment on the armored wire;

Step S2, welding the thin film platinum to the end of the inner core of the armored wire to obtain a first intermediate assembly, and then performing a second annealing treatment on the first intermediate assembly;

Step S3, filling the end of the armoring wire with magnesium oxide powder so that the thin film platinum is embedded by the magnesium oxide powder, and then welding a bottom pad to the end of the sheath of the armoring wire to make the bottom pad closing the end of the sheath of the armoring wire, thus obtaining a second intermediate assembly, and then performing a third annealing treatment on the second intermediate assembly;

Step S4, assembling the second intermediate assembly with a connector to obtain the thin film platinum resistance temperature sensor.

In the manufacturing method of the thin film platinum resistance temperature sensor provided by the present invention, in the step S1, the process of performing the first annealing treatment on the armored wire includes: slowly heating the armored wire to a temperature T _max1 , T _max1 is between 400°C and 600°C; then the temperature is maintained for a certain period of time, and the holding time is t ₁ ≥ 24h; then the temperature is slowly lowered to the temperature T ₁ , where T ₁ ≤ 40°C.

In the manufacturing method of the thin film platinum resistance temperature sensor provided by the present invention, the process of "slowly heating the armored wire to the temperature _Tmax1 " is divided into at least two heating stages, and there is a heat preservation stage between the two heating stages .

In the manufacturing method of the thin film platinum resistance temperature sensor provided by the present invention, in the step S2, the process of performing the second annealing treatment on the first intermediate assembly includes: slowly heating the first intermediate assembly to The temperature T _max2 is between 200°C and 300°C; then the temperature is _maintained for a certain period of time, and the holding time is t ₂ ≥ 2h; then the temperature is slowly lowered to the temperature T ₂ , where T ₂ ≤ 40°C.

In the manufacturing method of the thin film platinum resistance temperature sensor provided by the present invention, the process of "slowly heating the first intermediate assembly to the temperature T _max2 " is divided into at least two heating stages, and there are at least two heating stages between the two heating stages. a heat preservation stage.

In the manufacturing method of the thin film platinum resistance temperature sensor provided by the present invention, in the step S3, the process of performing the third annealing treatment on the second intermediate assembly includes: slowly heating the second intermediate assembly to The temperature T _max3 is between 300°C and 400°C; then the temperature is _maintained for a certain period of time, and the holding time is t ₃ ≥ 4h; then the temperature is slowly lowered to the temperature T ₃ , where T ₃ ≤ 40°C.

In the manufacturing method of the thin film platinum resistance temperature sensor provided by the present invention, the process of "slowly heating the second intermediate assembly to the temperature T _max3 " is divided into at least two heating stages, and there are at least two heating stages between the two heating stages. a heat preservation stage.

In the manufacturing method of the thin film platinum resistance temperature sensor provided by the present invention, the step S4 includes the following steps: sealing the gap between the connector and the armored wire with a sealant.

In order to solve the above-mentioned another technical problem, the technical solution adopted by the present invention is to provide a thin-film platinum resistance temperature sensor, which is produced by the above-mentioned manufacturing method.

In the thin film platinum resistance temperature sensor provided by the present invention, the thin film platinum resistance temperature sensor includes a connector, an armored wire, a thin film platinum, a bottom pad and magnesium oxide powder; the armored wire includes an outer skin and an inner core; the thin film Platinum is welded to the end of the inner core of the armored wire, the end of the armored wire is filled with magnesium oxide powder, the thin film platinum is embedded by the magnesium oxide powder, and the bottom pad closes the armored wire The end of the sheath, the connector is connected to the head end of the armor wire.

The following beneficial effects can be achieved by implementing the present invention: in the manufacturing method provided by the present invention, the annealing temperature and annealing time of each annealing are reasonably controlled by means of three annealings, so that the thin-film platinum resistance temperature sensor thus produced is The insulation resistance at a temperature of up to 400°C is greater than or equal to 100MΩ, so that the thin-film platinum resistance temperature sensor can be well used in the field of nuclear power.

Description of drawings

In order to illustrate the embodiments of the present invention or the technical solutions in the prior art more clearly, the following briefly introduces the accompanying drawings that are used in the description of the embodiments or the prior art. Obviously, the drawings in the following description are only It is an embodiment of the present invention. For those of ordinary skill in the art, other drawings can also be obtained according to the provided drawings without creative work:

1 is a flow chart of the steps of the manufacturing method provided in Embodiment 1 of the present invention;

2 is a schematic structural diagram of a thin-film platinum resistance temperature sensor provided in Embodiment 2 of the present invention;

FIG. 3 is an enlarged schematic diagram of the end of the thin-film platinum resistance temperature sensor shown in FIG. 2 .

Description of the reference numerals in the specific embodiment:

Armored wire 1 Thin film platinum 2 Magnesium oxide powder 3 Bottom pad 4 Connector 5 Inner core 11 outer skin 12

Detailed ways

Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention.

Terms including ordinal numbers such as "first" and "second" used in this specification can be used to describe various constituent elements, but these constituent elements are not limited by these terms. These terms are used only to distinguish one element from another. For example, the first constituent element may be named as the second constituent element, and similarly, the second constituent element may be named as the first constituent element without departing from the scope of rights of the present invention.

The general idea of the present invention is: by adopting three annealing methods and reasonably controlling the annealing temperature and annealing time of each annealing, the insulation resistance of the thin-film platinum resistance temperature sensor produced by this method can be up to 400°C. Greater than or equal to 100MΩ.

In order to better understand the above technical solutions, the above technical solutions will be described in detail below with reference to the accompanying drawings and specific embodiments of the description. The description is not intended to limit the technical solutions of the present application, and the embodiments of the present invention and the technical features in the embodiments may be combined with each other under the condition of no conflict.

Example 1

Referring to Fig. 1, the manufacturing method of the thin film platinum resistance temperature sensor provided by the present invention comprises the following steps:

Step S1, take an armored wire, the armored wire includes an outer skin and an inner core, and perform the first annealing treatment on the armored wire;

Step S2, welding the thin film platinum to the end of the inner core of the armored wire to obtain a first intermediate assembly, and then performing a second annealing treatment on the first intermediate assembly;

Step S3, filling the end of the armoring wire with magnesium oxide powder so that the thin film platinum is embedded with the magnesium oxide powder, and then welding a bottom pad to the end of the sheath of the armoring wire to make the bottom pad closing the end of the sheath of the armoring wire, thus obtaining a second intermediate assembly, and then performing a third annealing treatment on the second intermediate assembly;

Step S4, assembling the second intermediate assembly with a connector to obtain the thin film platinum resistance temperature sensor.

In the step S1, the process of performing the first annealing treatment on the armoring wire includes: slowly heating the armoring wire from a temperature T _{initial 1} to a temperature T _max1 , where T _max1 is between 400°C-600°C time; then keep for a certain period of time, the holding time t ₁ ≥ 24h; then slowly cool down to the temperature T ₁ , where T ₁ ≤ 40°C. Specifically, the process of "slowly heating the armoring wire to the temperature T _max1 " is divided into at least two heating stages, and there is a heat preservation stage between the two heating stages.

Preferably, the value of T _{initial 1} is 20°C. Of course, the value of T _{initial 1} may also be a value between 15°C and 25°C, for example, 15°C, 17°C, 19°C, 21°C, 23°C, and 25°C.

Preferably, the value of T _max1 is 550°C. Of course, the value of T _max1 may also be 400°C, 450°C, 500°C, 600°C, and the like.

Preferably, the value of t ₁ is 24h. Of course, the value of t ₁ can also be 25h, 26h, 27h, 28h and so on.

Preferably, the process of "slowly heating the armoring wire to the temperature T _max1 " is divided into four heating stages, and there is a heat preservation stage between every two adjacent heating stages. More preferably, the heating rate of each heating stage is the same. Further preferably, the heating rate of each heating stage is controlled to be between 5°C/h-12°C/h, and the holding time of each heat preservation stage is controlled to be between 0.5h-2h. Of course, the process of "slowly heating the armoring wire to the temperature T _max1 " can also be divided into 3, 5 or more heating stages.

Preferably, the value of T ₁ is 40°C. Of course, the value of T ₁ can also be 38°C, 36°C, 34°C, 32°C, 30°C, and the like.

Preferably, the process of "slowly cooling down to the temperature T ₁ " is divided into four cooling stages, and there is a heat preservation stage between every two adjacent cooling stages. More preferably, the cooling rate of each cooling stage is the same. Further preferably, the cooling rate of each cooling stage is controlled to be between 5°C/h-12°C/h, and the holding time of each heat preservation stage is controlled to be between 0.5h-2h. Of course, the process of "slowly cooling down to the temperature T ₁ " can also be divided into 3, 5 or more heating stages.

In the step S2, the process of performing the second annealing treatment on the first intermediate assembly includes: slowly heating the first intermediate assembly from a temperature T _{initial 2} to a temperature T _max2 , where T _max2 is at 200°C -300°C; then keep for a certain period of time, keeping time t ₂ ≥ 2h; then slowly cool down to temperature T ₂ , where T ₂ ≤ 40°C. Specifically, the process of "slowly heating the first intermediate assembly to the temperature T _max2 " is divided into at least two heating stages, and there is a heat preservation stage between the two heating stages.

Preferably, the value of T _{initial 2} is 20°C. Of course, the value of T _{initial 2} may also be a value between 15°C and 25°C, for example, 15°C, 17°C, 19°C, 21°C, 23°C, and 25°C.

Preferably, the value of T _max2 is 200°C. Of course, the value of T _max1 can also be 220°C, 240°C, 260°C, 280°C, 300°C, and the like.

Preferably, the value of t ₂ is 2h. Of course, the value of t ₁ can also be 2.5h, 3h, 3.5h, 4h and so on.

Preferably, the process of "slowly heating the first intermediate assembly to the temperature T _max2 " is divided into four heating stages, and there is a heat preservation stage between every two adjacent heating stages. More preferably, the heating rate of each heating stage is the same. Further preferably, the heating rate of each heating stage is controlled to be between 5°C/h-12°C/h, and the holding time of each heat preservation stage is controlled to be between 0.5h-2h. Of course, the process of "slowly heating the first intermediate assembly to the temperature T _max2 " can also be divided into 3, 5 or more heating stages.

Preferably, the value of T ₂ is 40°C. Of course, the value of T ₂ can also be 38°C, 36°C, 34°C, 32°C, 30°C, and the like.

Preferably, the process of "slowly cooling down to the temperature T ₂ " is divided into four cooling stages, and there is a heat preservation stage between every two adjacent cooling stages. More preferably, the cooling rate of each cooling stage is the same. Further preferably, the cooling rate of each cooling stage is controlled to be between 5°C/h-12°C/h, and the holding time of each heat preservation stage is controlled to be between 0.5h-2h. Of course, the process of "slowly cooling down to the temperature T ₂ " can also be divided into 3, 5 or more heating stages.

In the step S3, the process of performing the third annealing treatment on the second intermediate assembly includes: slowly heating the second intermediate assembly from a temperature T _{initial 3} to a temperature T _max3 , where T _max3 is at 300°C -400°C; then keep for a certain period of time, keeping time t ₃ ≥ 4h; then slowly cool down to temperature T ₃ , where T ₃ ≤ 40°C. Specifically, the process of "slowly heating the second intermediate assembly to the temperature T _max3 " is divided into at least two heating stages, and there is a heat preservation stage between the two heating stages.

Preferably, the value of T _{initial 3} is 20°C. Of course, the value of T _{initial 3} may also be a value between 15°C and 25°C, for example, 15°C, 17°C, 19°C, 21°C, 23°C, and 25°C.

Preferably, the value of T _max3 is 300°C. Of course, the value of T _max1 can also be 320°C, 340°C, 360°C, 380°C, 400°C, and the like.

Preferably, the value of t ₃ is 4h. Of course, the value of t ₁ can also be 4.5h, 5h, 5.5h, 6h and so on.

Preferably, the process of "slowly heating the second intermediate assembly to the temperature T _max3 " is divided into four heating stages, and there is a heat preservation stage between every two adjacent heating stages. More preferably, the heating rate of each heating stage is the same. Further preferably, the heating rate of each heating stage is controlled between 5°C/h-12°C/h, and the holding time of each heat preservation stage is controlled between 0.5h-2h. Of course, the process of "slowly heating the second intermediate assembly to the temperature T _max3 " can also be divided into 3, 5 or more heating stages.

Preferably, the value of T ₃ is 40°C. Of course, the value of T ₃ can also be 38° C., 36° C., 34° C., 32° C., 30° C., and the like.

Preferably, the process of "slowly cooling down to the temperature T ₃ " is divided into four cooling stages, and there is a heat preservation stage between every two adjacent cooling stages. More preferably, the cooling rate of each cooling stage is the same. Further preferably, the cooling rate of each cooling stage is controlled between 5°C/h-12°C/h, and the holding time of each heat preservation stage is controlled between 0.5h-2h. Of course, the process of "slowly cooling down to the temperature T ₃ " can also be divided into 3, 5 or more heating stages.

It is worth mentioning that each annealing (the first annealing, the second annealing, the third annealing) is carried out in multiple stages to ensure a slow temperature rise, in order to prevent rapid temperature rise from destroying the performance of the temperature sensor.

In the step S4, the head end of the armor wire of the second intermediate assembly is assembled and connected to the connector, and then the gap between the connector and the armor wire is sealed with a sealant , thus obtaining the thin film platinum resistance temperature sensor.

Preferably, the connector is an 8N45S connector.

By adopting the testing method of insulation resistance commonly used in the field, a plurality of thin-film platinum resistance temperature sensors manufactured by the manufacturing method provided in Example 1 were tested. The insulation resistance under the conditions is greater than or equal to 100MΩ.

To sum up, in the manufacturing method provided by the present invention, the annealing temperature and annealing time of each annealing are reasonably controlled by adopting three annealing methods, so that the thin-film platinum resistance temperature sensor produced by this method has a temperature of up to 400°C. The insulation resistance under temperature conditions is greater than or equal to 100MΩ, so that the thin film platinum resistance temperature sensor can be well used in the field of nuclear power.

Embodiment 2

This embodiment provides a thin film platinum resistance temperature sensor. The thin film platinum resistance temperature sensor is manufactured by the manufacturing method described in the first embodiment. 2 and 3, the thin film platinum resistance temperature sensor includes a connector 5, an armored wire 1, a thin film platinum 2, a bottom pad 4 and magnesium oxide powder 3; the armored wire 1 includes an outer skin 12 and an inner core 11 ; The thin film platinum 2 is welded to the end of the inner core 11 of the armored wire 1, the end of the armored wire 1 is filled with magnesium oxide powder 3, and the thin film platinum 2 is wrapped by the magnesium oxide powder 3. Buried, the bottom pad 4 closes the end of the sheath 12 of the armored wire 1 , and the connector 5 is connected to the head end of the armored wire 1 .

In this embodiment, the connector 1 selects an 8N45S connector.

The embodiments of the present invention have been described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific embodiments, which are merely illustrative rather than restrictive. Under the inspiration of the present invention, without departing from the scope of protection of the present invention and the claims, many forms can be made, which all belong to the protection of the present invention.

Claims (10)

1. A method of manufacturing a thin film platinum resistance temperature sensor, the method comprising the steps of:

step S1, taking an armor wire, wherein the armor wire comprises an outer skin and an inner core, and carrying out primary annealing treatment on the armor wire;

step S2, welding film platinum to the tail end of the inner core of the armor wire to obtain a first intermediate assembly, and then carrying out secondary annealing treatment on the first intermediate assembly;

step S3, filling magnesium oxide powder into the ends of the armouring wires so that the thin film platinum is embedded by the magnesium oxide powder, then welding a base pad with the ends of the sheaths of the armouring wires so that the base pad closes the ends of the sheaths of the armouring wires, thus obtaining a second intermediate assembly, and then carrying out a third annealing treatment on the second intermediate assembly;

step S4, assembling the second intermediate assembly with a connector to obtain the thin film platinum resistor temperature sensor.

2. The method of manufacturing a thin film platinum resistance temperature sensor according to claim 1, wherein in the step S1, the process of performing the first annealing process on the armouring wire includes: slowly heating the armouring wire to temperature T_max1，T_max1Between 400 ℃ and 600 ℃; then preserving the heat for a certain time t₁The time is more than or equal to 24 hours; then slowly cooling to the temperature T₁，T₁≤40℃。

3. The method of claim 2, wherein the sheath wires are slowly heated to a temperature T_max1The process is divided into at least two heating stages, and a heat preservation stage is arranged between the two heating stages.

4. The method of manufacturing a thin film platinum resistance temperature sensor as claimed in claim 1, wherein in the step S2, the second annealing process of the first intermediate assembly comprises: slowly heating the first intermediate assembly to a temperature T_max2，T_max2Between 200 ℃ and 300 ℃; then preserving the heat for a certain time t₂The time is more than or equal to 2 hours; then slowly cooling to the temperature T₂，T₂≤40℃。

5. The method as claimed in claim 4, wherein the step of slowly heating the first intermediate assembly to a temperature T_max2"is divided intoTwo heating stages are omitted, and a heat preservation stage is arranged between the two heating stages.

6. The method of manufacturing a thin film platinum resistance temperature sensor as claimed in claim 1, wherein in the step S3, the third annealing process of the second intermediate assembly comprises: slowly heating the second intermediate assembly to a temperature T_max3，T_max3Between 300 ℃ and 400 ℃; then preserving the heat for a certain time t₃The time is more than or equal to 4 hours; then slowly cooling to the temperature T₃，T₃≤40℃。

7. The method as claimed in claim 6, wherein the step of slowly heating the second intermediate assembly to a temperature T_max3The process is divided into at least two heating stages, and a heat preservation stage is arranged between the two heating stages.

8. The method for manufacturing a thin film platinum resistance temperature sensor as claimed in claim 1, wherein the step S4 comprises the steps of: and sealing the gap between the connector and the armor wires by using sealant.

9. A thin film platinum resistance temperature sensor, characterized in that it is manufactured by the manufacturing method according to any one of claims 1 to 8.

10. The thin film platinum resistance temperature sensor according to claim 9, wherein the thin film platinum resistance temperature sensor comprises a connector, an armor wire, a thin film platinum, a base pad, and magnesium oxide powder; the armor wire comprises an outer skin and an inner core; the film platinum is welded at the tail end of the inner core of the armor wire, the tail end of the armor wire is filled with magnesium oxide powder, the film platinum is embedded by the magnesium oxide powder, the bottom pad seals the tail end of the outer skin of the armor wire, and the connector is connected to the head end of the armor wire.

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