CN112054112A - Low-temperature metallization process for producing semiconductor refrigeration sheet - Google Patents
Low-temperature metallization process for producing semiconductor refrigeration sheet Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 48
- 238000001465 metallisation Methods 0.000 title claims abstract description 47
- 230000008569 process Effects 0.000 title claims abstract description 45
- 238000005057 refrigeration Methods 0.000 title claims abstract description 10
- 238000005498 polishing Methods 0.000 claims abstract description 36
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 27
- 238000004140 cleaning Methods 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 27
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 18
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 18
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- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000004372 Polyvinyl alcohol Substances 0.000 claims abstract description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 9
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- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 9
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- 229920002451 polyvinyl alcohol Polymers 0.000 claims abstract description 9
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
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- 235000019422 polyvinyl alcohol Nutrition 0.000 claims abstract description 6
- 235000011121 sodium hydroxide Nutrition 0.000 claims abstract description 6
- 238000011056 performance test Methods 0.000 claims abstract description 4
- 238000000992 sputter etching Methods 0.000 claims abstract description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
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Abstract
The invention discloses a low-temperature metallization process for producing semiconductor refrigeration sheets, which comprises the following steps: step one, laser cutting; step two, ion etching; step three, cleaning for one time; step four, vacuum sputtering; step five, grinding and polishing; step six, secondary cleaning; step seven, performance test; the workpiece is ultrasonically cleaned twice by using the cleaning solution prepared by mixing hydrogen chloride, sulfuric acid, ammonium hydroxide and deionized water, so that the impurities such as residues and pollutants on the surface of the workpiece are thoroughly removed, the metallization process of a semiconductor is ensured, the quality of a semiconductor refrigerating sheet is improved, the workpiece is ground and polished by using the polishing solution prepared by mixing quartz, silicon dioxide, sodium hydroxide, polyvinyl alcohol, phosphoric acid and hydrogen peroxide, the surface treatment effect of the workpiece is improved, the grinding and polishing precision of the workpiece is improved, the defective rate of a metallization process is reduced, and the metallization cost of the semiconductor refrigerating sheet is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor refrigeration piece production, in particular to a low-temperature metallization process for producing semiconductor refrigeration pieces.
Background
The semiconductor refrigerating plate, also called thermoelectric refrigerating plate, is a heat pump. Its advantages are no slide part, limited space, high reliability and no pollution of refrigerant. By using the Peltier effect of the semiconductor materials, when direct current passes through a galvanic couple formed by connecting two different semiconductor materials in series, heat can be absorbed and released at two ends of the galvanic couple respectively, and the aim of refrigeration can be fulfilled. The refrigerating technology which generates negative thermal resistance is characterized by no moving parts and higher reliability. The semiconductor refrigerating plate is formed by arranging a plurality of N-type semiconductor and P-type semiconductor particles mutually, NP is connected with a common conductor to form a complete circuit, usually copper, aluminum or other metal conductors, and finally two ceramic plates are clamped like sandwich biscuits, wherein the ceramic plates must be insulated and have good heat conduction. At present, a layer of conductive metal film is deposited on the surfaces of an N-type semiconductor and a P-type semiconductor mainly through a metallization process in the industry, and good ohmic contact is formed between the N-type semiconductor and the P-type semiconductor.
However, the conventional metallization process for producing the semiconductor chilling plates mostly has the following problems: firstly, a medium-high temperature metallization process is usually adopted, and the mutual diffusion problem of partial conductive metal materials is easy to occur at a high temperature state, so that the performance of a semiconductor is damaged, barrier layer metal is often introduced between upper and lower layer materials to prevent the diffusion of the materials, but the metallization process difficulty is improved, the material consumption is large, and the metallization processing cost is increased; secondly, the process flow is simple, the cleaning effect is poor, impurities such as residues and pollutants on the surface of a workpiece cannot be thoroughly removed, the metallization process of a semiconductor is inevitably influenced, and the quality of the semiconductor refrigerating sheet is reduced; thirdly, the surface treatment effect is poor, the grinding and polishing precision is low, the defects of burrs, fins and the like on the surface of a workpiece cannot be thoroughly eliminated, the defective rate is high, and the metallization cost of the semiconductor refrigerating sheet is increased.
Disclosure of Invention
The invention aims to provide a low-temperature metallization process for producing semiconductor refrigeration sheets, so as to solve the problems in the background technology.
In order to solve the technical problems, the invention provides the following technical scheme: a low-temperature metallization process for producing semiconductor refrigeration sheets comprises the following steps: step one, laser cutting; step two, ion etching; step three, cleaning for one time; step four, vacuum sputtering; step five, grinding and polishing; step six, secondary cleaning; step seven, performance test;
in the first step, the semiconductor substrate is placed on a laser cutting machine and cut into a semiconductor substrate with a prefabricated shape;
in the second step, the semiconductor substrate prepared in the first step is placed into a low-temperature plasma etching machine, then a proper amount of etching gas is injected, the etching gas generates high-density low-temperature plasma after coupled glow discharge, the surface of the semiconductor substrate is bombarded, chemical bonds of semiconductor materials are broken, volatile substances are generated, the volatile substances are separated from the semiconductor substrate in a gas form and are pumped away from a vacuum pipeline, and a connecting circuit with a prefabricated shape is etched on the semiconductor substrate to prepare a semiconductor etching sheet;
in the third step, the semiconductor etching sheet prepared in the second step is placed into an ultrasonic cleaning machine, and then a proper amount of cleaning solution is added, so that the cleaning solution can comprehensively clean impurities such as processing residues and processing pollutants on the surface of the semiconductor etching sheet under the oscillation of ultrasonic waves, and the impurities are taken out and dried by hot air;
in the fourth step, the semiconductor etching sheet washed in the third step is put into a vacuum sputtering film plating machine, then a proper amount of target material fixing plate is added, high-energy particles are utilized to impact the target material fixing plate, so that the knocked target material atoms penetrate through vacuum, are sputtered and deposited in a connecting circuit on the surface of the semiconductor etching sheet, and are plated with a conductive metal film in a prefabricated shape to prepare a low-temperature metallized semi-finished product;
placing the low-temperature metallized semi-finished product prepared in the fourth step on a chemical mechanical grinding machine, adding a proper amount of polishing solution, uniformly distributing the polishing solution between the surface of the low-temperature metallized semi-finished product and a polishing pad under the action of centrifugal force, performing chemical reaction with impurities remained on the surface of the low-temperature metallized semi-finished product, removing a reaction product from the surface of the low-temperature metallized semi-finished product through the micro-mechanical friction action of the polishing pad and the polishing head, dissolving the reaction product into the flowing polishing solution, and taking away the reaction product to prepare the low-temperature metallized finished product with a flattened surface and uniform thickness of a conductive metal film;
in the sixth step, the low-temperature metallized finished product prepared in the fifth step is placed into an ultrasonic cleaning machine, and then a proper amount of cleaning solution is added, so that the cleaning solution can comprehensively clean impurities such as processing residues and processing pollutants on the surface of the low-temperature metallized finished product under the oscillation of ultrasonic waves, and the impurities are taken out and dried by hot air;
and step seven, putting the low-temperature metallized finished product washed in the step six on a semiconductor detector, detecting indexes such as appearance, surface precision and electrical performance, screening out unqualified products, and packaging the qualified products into a warehouse.
According to the technical scheme, in the first step, the operating frequency of the laser cutting machine is 500-2800 Hz, and the operating temperature is 115-136 ℃.
According to the technical scheme, in the second step, the operating frequency of the low-temperature plasma etcher is 10-15 MHz, and the operating temperature is 28-35 ℃.
According to the technical scheme, in the third step, the operating frequency of the ultrasonic cleaning machine is 10-13 kHz, and the operating temperature is 25-37 ℃.
According to the technical scheme, in the third step, the cleaning solution is prepared by mixing hydrogen chloride, sulfuric acid, ammonium hydroxide and deionized water, and the weight ratio of the hydrogen chloride to the sulfuric acid to the ammonium hydroxide to the deionized water is 2: 3: 1: 5.
According to the technical scheme, in the fourth step, the operating pressure of the vacuum sputtering coating machine is-0.0055 Pa to-0.0045 Pa, and the operating temperature is 120-180 ℃.
According to the technical scheme, in the fifth step, the rotating speed of the chemical mechanical polishing machine is 3200-5800 r/min, and the operating temperature is 32-45 ℃.
According to the technical scheme, in the fifth step, the polishing solution is prepared by mixing quartz, silicon dioxide, sodium hydroxide, polyvinyl alcohol, phosphoric acid and hydrogen peroxide, and the weight ratio of the quartz, the silicon dioxide, the sodium hydroxide, the polyvinyl alcohol, the phosphoric acid and the hydrogen peroxide is 215: 123: 42: 1: 56: 300.
Compared with the prior art, the invention has the following beneficial effects: the low-temperature metallization process for producing the semiconductor chilling plate adopts the low-temperature metallization process, avoids the problem of mutual diffusion of conductive metal materials at high temperature, ensures the performance of a semiconductor, saves barrier layer metal, reduces the material consumption of the metallization process, reduces the difficulty of the metallization process and saves the processing cost of metallization; the workpiece is ultrasonically cleaned twice by using cleaning liquid prepared by mixing hydrogen chloride, sulfuric acid, ammonium hydroxide and deionized water, so that the impurities such as residues and pollutants on the surface of the workpiece are thoroughly removed, the metallization process of a semiconductor is ensured, and the quality of the semiconductor refrigerating sheet is improved; the polishing solution prepared by mixing quartz, silicon dioxide, sodium hydroxide, polyvinyl alcohol, phosphoric acid and hydrogen peroxide is used for grinding and polishing the workpiece, so that the surface treatment effect of the workpiece is improved, the grinding and polishing precision of the workpiece is improved, the defects of burrs, fins and the like on the surface of the workpiece are thoroughly eliminated, the defective rate of a metallization process is reduced, and the metallization cost of the semiconductor refrigerating sheet is reduced.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a process flow diagram of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, the present invention provides a technical solution: a low-temperature metallization process for producing semiconductor refrigeration sheets comprises the following steps: step one, laser cutting; step two, ion etching; step three, cleaning for one time; step four, vacuum sputtering; step five, grinding and polishing; step six, secondary cleaning; step seven, performance test;
in the first step, the semiconductor substrate is placed on a laser cutting machine, the operating frequency of the laser cutting machine is 500-2800 Hz, the operating temperature is 115-136 ℃, and the semiconductor substrate is cut into a prefabricated shape;
in the second step, the semiconductor substrate prepared in the first step is placed into a low-temperature plasma etching machine, the operating frequency of the low-temperature plasma etching machine is 10-15 MHz, the operating temperature is 28-35 ℃, then a proper amount of etching gas is injected, the etching gas generates high-density low-temperature plasma after coupled glow discharge, the surface of the semiconductor substrate is bombarded, chemical bonds of semiconductor materials are broken, volatile substances are generated, the volatile substances are separated from the semiconductor substrate in a gas form and are pumped away from a vacuum pipeline, and a connecting circuit with a prefabricated shape is etched on the semiconductor substrate, so that a semiconductor etching sheet is prepared;
in the third step, the semiconductor etching sheet prepared in the second step is placed into an ultrasonic cleaning machine, the operating frequency of the ultrasonic cleaning machine is 10-13 kHz, the operating temperature is 25-37 ℃, a proper amount of cleaning solution is added, the cleaning solution is prepared by mixing hydrogen chloride, sulfuric acid, ammonium hydroxide and deionized water, the weight ratio of the hydrogen chloride to the sulfuric acid to the ammonium hydroxide to the deionized water is 2: 3: 1: 5, the cleaning solution comprehensively cleans impurities such as processing residues and processing pollutants on the surface of the semiconductor etching sheet under the oscillation of ultrasonic waves, and the semiconductor etching sheet is taken out and dried by hot air;
putting the semiconductor etching sheet washed in the third step into a vacuum sputtering coating machine, wherein the operating pressure of the vacuum sputtering coating machine is-0.0055-0.0045 Pa, the operating temperature is 120-180 ℃, adding a proper amount of target material fixing plate, impacting the target material fixing plate by utilizing high-energy particles, enabling the knocked out target material atoms to penetrate through vacuum, sputtering and depositing in a connecting circuit on the surface of the semiconductor etching sheet, and plating a conductive metal film in a prefabricated shape to prepare a low-temperature metallized semi-finished product;
in the fifth step, the low-temperature metallized semi-finished product prepared in the fourth step is placed on a chemical mechanical grinding machine table, the rotating speed of the chemical mechanical grinding machine table is 3200-5800 r/min, the operating temperature is 32-45 ℃, a proper amount of polishing solution is added, the polishing solution is prepared by mixing quartz, silicon dioxide, sodium hydroxide, polyvinyl alcohol, phosphoric acid and hydrogen peroxide, the weight ratio of the quartz, the silicon dioxide, the sodium hydroxide, the polyvinyl alcohol, the phosphoric acid and the hydrogen peroxide is 215: 123: 42: 1: 56: 300, the polishing solution is uniformly distributed between the surface of the low-temperature metallized semi-finished product and the polishing pad under the action of centrifugal force to generate chemical reaction with impurities remained on the surface of the low-temperature metallized semi-finished product, and reaction products are removed from the surface of the low-temperature metallized semi-finished product through the micro-mechanical friction action of the polishing pad and the polishing head and are dissolved in the flowing polishing solution to be taken away, preparing a low-temperature metallized finished product with a flattened surface and uniform thickness of the conductive metal film;
in the sixth step, the low-temperature metallized finished product prepared in the fifth step is placed into an ultrasonic cleaning machine, and then a proper amount of cleaning solution is added, so that the cleaning solution can comprehensively clean impurities such as processing residues and processing pollutants on the surface of the low-temperature metallized finished product under the oscillation of ultrasonic waves, and the impurities are taken out and dried by hot air;
and step seven, putting the low-temperature metallized finished product washed in the step six on a semiconductor detector, detecting indexes such as appearance, surface precision and electrical performance, screening out unqualified products, and packaging the qualified products into a warehouse.
Compared with the prior art, the invention has the following beneficial effects: the whole process of the invention adopts a low-temperature metallization process, thereby avoiding the problem of mutual diffusion of conductive metal materials at high temperature, ensuring the performance of a semiconductor, saving barrier layer metal, reducing the material consumption of the metallization process, reducing the metallization process difficulty and saving the metallization processing cost; the workpiece is ultrasonically cleaned twice by using cleaning liquid prepared by mixing hydrogen chloride, sulfuric acid, ammonium hydroxide and deionized water, so that the impurities such as residues and pollutants on the surface of the workpiece are thoroughly removed, the metallization process of a semiconductor is ensured, and the quality of the semiconductor refrigerating sheet is improved; the polishing solution prepared by mixing quartz, silicon dioxide, sodium hydroxide, polyvinyl alcohol, phosphoric acid and hydrogen peroxide is used for grinding and polishing the workpiece, so that the surface treatment effect of the workpiece is improved, the grinding and polishing precision of the workpiece is improved, the defects of burrs, fins and the like on the surface of the workpiece are thoroughly eliminated, the defective rate of a metallization process is reduced, and the metallization cost of the semiconductor refrigerating sheet is reduced.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A low-temperature metallization process for producing semiconductor refrigeration sheets comprises the following steps: step one, laser cutting; step two, ion etching; step three, cleaning for one time; step four, vacuum sputtering; step five, grinding and polishing; step six, secondary cleaning; step seven, performance test; the method is characterized in that:
in the first step, the semiconductor substrate is placed on a laser cutting machine and cut into a semiconductor substrate with a prefabricated shape;
in the second step, the semiconductor substrate prepared in the first step is placed into a low-temperature plasma etching machine, then a proper amount of etching gas is injected, the etching gas generates high-density low-temperature plasma after coupled glow discharge, the surface of the semiconductor substrate is bombarded, chemical bonds of semiconductor materials are broken, volatile substances are generated, the volatile substances are separated from the semiconductor substrate in a gas form and are pumped away from a vacuum pipeline, and a connecting circuit with a prefabricated shape is etched on the semiconductor substrate to prepare a semiconductor etching sheet;
in the third step, the semiconductor etching sheet prepared in the second step is placed into an ultrasonic cleaning machine, and then a proper amount of cleaning solution is added, so that the cleaning solution can comprehensively clean impurities such as processing residues and processing pollutants on the surface of the semiconductor etching sheet under the oscillation of ultrasonic waves, and the impurities are taken out and dried by hot air;
in the fourth step, the semiconductor etching sheet washed in the third step is put into a vacuum sputtering film plating machine, then a proper amount of target material fixing plate is added, high-energy particles are utilized to impact the target material fixing plate, so that the knocked target material atoms penetrate through vacuum, are sputtered and deposited in a connecting circuit on the surface of the semiconductor etching sheet, and are plated with a conductive metal film in a prefabricated shape to prepare a low-temperature metallized semi-finished product;
placing the low-temperature metallized semi-finished product prepared in the fourth step on a chemical mechanical grinding machine, adding a proper amount of polishing solution, uniformly distributing the polishing solution between the surface of the low-temperature metallized semi-finished product and a polishing pad under the action of centrifugal force, performing chemical reaction with impurities remained on the surface of the low-temperature metallized semi-finished product, removing a reaction product from the surface of the low-temperature metallized semi-finished product through the micro-mechanical friction action of the polishing pad and the polishing head, dissolving the reaction product into the flowing polishing solution, and taking away the reaction product to prepare the low-temperature metallized finished product with a flattened surface and uniform thickness of a conductive metal film;
in the sixth step, the low-temperature metallized finished product prepared in the fifth step is placed into an ultrasonic cleaning machine, and then a proper amount of cleaning solution is added, so that the cleaning solution can comprehensively clean impurities such as processing residues and processing pollutants on the surface of the low-temperature metallized finished product under the oscillation of ultrasonic waves, and the impurities are taken out and dried by hot air;
and step seven, putting the low-temperature metallized finished product washed in the step six on a semiconductor detector, detecting indexes such as appearance, surface precision and electrical performance, screening out unqualified products, and packaging the qualified products into a warehouse.
2. The low-temperature metallization process for producing the semiconductor chilling plate according to claim 1, wherein the low-temperature metallization process comprises the following steps: in the first step, the operating frequency of the laser cutting machine is 500-2800 Hz, and the operating temperature is 115-136 ℃.
3. The low-temperature metallization process for producing the semiconductor chilling plate according to claim 1, wherein the low-temperature metallization process comprises the following steps: in the second step, the operating frequency of the low-temperature plasma etcher is 10-15 MHz, and the operating temperature is 28-35 ℃.
4. The low-temperature metallization process for producing the semiconductor chilling plate according to claim 1, wherein the low-temperature metallization process comprises the following steps: in the third step, the operating frequency of the ultrasonic cleaning machine is 10-13 kHz, and the operating temperature is 25-37 ℃.
5. The low-temperature metallization process for producing the semiconductor chilling plate according to claim 1, wherein the low-temperature metallization process comprises the following steps: in the third step, the cleaning solution is prepared by mixing hydrogen chloride, sulfuric acid, ammonium hydroxide and deionized water, and the weight ratio of the hydrogen chloride, the sulfuric acid, the ammonium hydroxide and the deionized water is 2: 3: 1: 5.
6. The low-temperature metallization process for producing the semiconductor chilling plate according to claim 1, wherein the low-temperature metallization process comprises the following steps: in the fourth step, the operating pressure of the vacuum sputtering coating machine is-0.0055 to-0.0045 Pa, and the operating temperature is 120 to 180 ℃.
7. The low-temperature metallization process for producing the semiconductor chilling plate according to claim 1, wherein the low-temperature metallization process comprises the following steps: in the fifth step, the rotation speed of the chemical mechanical polishing machine is 3200-5800 r/min, and the operation temperature is 32-45 ℃.
8. The low-temperature metallization process for producing the semiconductor chilling plate according to claim 1, wherein the low-temperature metallization process comprises the following steps: in the fifth step, the polishing solution is prepared by mixing quartz, silicon dioxide, sodium hydroxide, polyvinyl alcohol, phosphoric acid and hydrogen peroxide, and the weight ratio of the quartz, the silicon dioxide, the sodium hydroxide, the polyvinyl alcohol, the phosphoric acid and the hydrogen peroxide is 215: 123: 42: 1: 56: 300.
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| US20070128773A1 (en) * | 2005-12-07 | 2007-06-07 | Intel Corporation | Forming a thin film thermoelectric cooler and structures formed thereby |
| CN204289538U (en) * | 2014-12-25 | 2015-04-22 | 陈树山 | A kind of water-cooled high power semi-conductor refrigeration low-temperature cold bench |
| KR20200023100A (en) * | 2018-08-24 | 2020-03-04 | 주식회사 엘지화학 | Method of manufacturing thermoelectric module and the thermoelectric module manufactured by the method |
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