CN112052743B - Photoelectric fingerprint identification circuit and display device - Google Patents
Photoelectric fingerprint identification circuit and display device Download PDFInfo
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- CN112052743B CN112052743B CN202010807935.6A CN202010807935A CN112052743B CN 112052743 B CN112052743 B CN 112052743B CN 202010807935 A CN202010807935 A CN 202010807935A CN 112052743 B CN112052743 B CN 112052743B
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- 239000010409 thin film Substances 0.000 claims abstract description 234
- 239000003990 capacitor Substances 0.000 claims abstract description 18
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 230000008859 change Effects 0.000 claims description 14
- 230000006698 induction Effects 0.000 claims description 2
- 241000750042 Vini Species 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- Engineering & Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Image Input (AREA)
Abstract
The invention discloses a photoelectric fingerprint identification circuit and a display device, wherein the photoelectric fingerprint identification circuit comprises a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a storage capacitor and a photodiode; one end of the storage capacitor is connected to the second connection node, and the other end of the storage capacitor is electrically connected with the drain electrode of the sixth thin film transistor; one end of the photodiode is connected with the grounding voltage, the other end of the photodiode is connected with the first connecting node, and the photodiode is used for receiving optical signals and correspondingly changing the grid voltage of the first thin film transistor according to the optical signals. The photoelectric fingerprint identification circuit and the display device provided by the invention convert the optical signal into the electric signal to obtain the fingerprint image, thereby ensuring the accuracy of the identification signal.
Description
Technical Field
The application relates to the technical field of displays, in particular to a photoelectric fingerprint identification circuit and a display device.
Background
The optical fingerprint identification technology is used as a mature fingerprint identification technology which is integrated into daily life of people, and fingerprint locks, fingerprint attendance checking and the like are not lack of the body and shadow. With the continuous development of technology, the screen occupation ratio of mobile terminals such as mobile phones is higher and higher, the comprehensive screen mobile terminal has become a development trend, and aiming at fingerprint identification of the comprehensive screen mobile terminal, the heat of the fingerprint identification in the screen is higher and higher, so that the optical fingerprint identification is renewed. Currently, most of optical recognition sensors applied to on-screen fingerprint recognition are silicon-based sensors, but silicon-based sensors have high cost, so that fingerprint recognition modules with such optical recognition sensors have high prices.
At present, an organic light-Emitting Diode (OLED) mobile phone is generally provided with an under-screen fingerprint identification module structure, light emitted by an OLED panel irradiates the fingerprint lines and reflects light, the reflected light passes through a collimator to reach a complementary metal oxide semiconductor (Complementary Metal Oxide Semiconductor, CMOS) or an a-Si sensor, the reflected light is strong and weak due to the rugged finger lines, the sensor senses fingerprint information to capture the fingerprint information, but the light reflected by the fingerprint needs to pass through the OLED panel to reach the collimator and the CMOS or the a-Si sensor, so that the reflected light is very weak, and the photosensitivity is greatly affected.
Disclosure of Invention
In order to overcome the defects of the prior art, the embodiment of the application provides a photoelectric fingerprint identification circuit and a display device, wherein reflected light of a finger fingerprint is directly irradiated on a photodiode so as to obtain a pattern of the fingerprint.
The embodiment of the invention provides a photoelectric fingerprint identification circuit, which comprises a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a storage capacitor and a photodiode;
the first thin film transistor is used for receiving a power supply voltage, the second thin film transistor, the third thin film transistor and the fourth thin film transistor are used for receiving a reset voltage, and the fifth thin film transistor and the sixth thin film transistor are used for receiving a scanning signal;
one end of the storage capacitor is connected with a second connection node, and the other end of the storage capacitor is electrically connected with the drain electrode of the sixth thin film transistor;
one end of the photodiode is connected with the grounding voltage, the other end of the photodiode is connected with the first connecting node, and the photodiode is used for receiving optical signals and correspondingly changing the grid voltage of the first thin film transistor according to the optical signals.
According to the photoelectric fingerprint identification circuit provided by the embodiment of the invention, the second thin film transistor, the third thin film transistor and the fourth thin film transistor form a reset compensation unit.
According to the photoelectric fingerprint identification circuit provided by the embodiment of the invention, the grid electrode of the second thin film transistor is used for receiving reset voltage, the source electrode of the second thin film transistor is used for receiving initial potential, and the drain electrode of the second thin film transistor is connected with the first node; the grid electrode of the third thin film transistor is used for receiving reset voltage, the source electrode of the third thin film transistor is used for receiving initial potential, and the drain electrode of the third thin film transistor is connected with the second node; and the grid electrode of the fourth thin film transistor is connected with a reset voltage, the source electrode of the fourth thin film transistor is connected with a third node, and the drain electrode of the fourth thin film transistor is used for receiving the grounding voltage.
According to the photoelectric fingerprint identification circuit provided by the embodiment of the invention, the fifth thin film transistor forms a first switch unit; the grid electrode of the fifth thin film transistor is used for receiving a scanning signal, the source electrode of the fifth thin film transistor is connected with the third node, and the drain electrode of the fifth thin film transistor is used for receiving an induction signal.
According to the photoelectric fingerprint identification circuit provided by the embodiment of the invention, the sixth thin film transistor forms a second switch unit; the grid electrode of the sixth thin film transistor is used for receiving a scanning signal, the source electrode of the sixth thin film transistor is connected with the first node, and the drain electrode of the sixth thin film transistor is connected with one end of the storage capacitor.
According to the photoelectric fingerprint identification circuit provided by the embodiment of the invention, the grid electrode of the first thin film transistor is connected with the second node, the source electrode of the first thin film transistor is used for receiving the power supply voltage, and the drain electrode of the first thin film transistor is connected with the third node.
According to the photoelectric fingerprint identification circuit provided by the embodiment of the invention, the working phase of the photoelectric fingerprint identification circuit comprises a reset phase and a sensing phase;
in the reset stage, the second thin film transistor, the third thin film transistor and the fourth thin film transistor are turned on, the initial potential is written into the voltage of the first node and the voltage of the second node, and the grounding voltage is written into the voltage of the third node.
According to the photoelectric fingerprint identification circuit provided by the embodiment of the invention, in the sensing stage, the second thin film transistor, the third thin film transistor and the fourth thin film transistor are turned off, the first thin film transistor, the fifth thin film transistor and the sixth thin film transistor are turned on, at this time, the photodiode senses the change of light rays and converts the light signals into electric signals, the voltage of the second node is influenced by the photodiode, the turning-on degree of the first thin film transistor is changed, and the sensing line senses the current change of the first thin film transistor to obtain the fingerprint image.
According to the photoelectric fingerprint identification circuit provided by the embodiment of the invention, the first thin film transistor, the second thin film transistor, the third thin film transistor, the fourth thin film transistor, the fifth thin film transistor and the sixth thin film transistor are P-type thin film transistors or N-type thin film transistors.
The embodiment of the invention also provides a display device which comprises the photoelectric fingerprint identification circuit.
The beneficial effects of the invention are as follows: the embodiment of the invention provides a photoelectric fingerprint identification circuit and a display device, wherein the photoelectric fingerprint identification circuit comprises a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a storage capacitor and a photodiode, wherein the second thin film transistor, the third thin film transistor and the fourth thin film transistor form a reset compensation unit, and the reset compensation unit resets the photoelectric fingerprint identification circuit; the fifth thin film transistor forms a first switching unit, and the sixth thin film transistor forms a second switching unit; in a reset stage, the second thin film transistor, the third thin film transistor and the fourth thin film transistor are turned on, the initial potential Vini is written into the voltage of the first node a and the voltage of the second node B, and the ground voltage is written into the voltage of the third node C; in the sensing stage, the second thin film transistor, the third thin film transistor and the fourth thin film transistor are turned off, the first thin film transistor, the fifth thin film transistor and the sixth thin film transistor are turned on, at this time, the photodiode senses the change of light and converts the light signal into an electric signal, the voltage of the second node B is influenced by the photodiode, the turn-on degree of the first thin film transistor is changed, and the sensing line senses the current change of the first thin film transistor to obtain an image of the fingerprint. The photoelectric fingerprint identification circuit is manufactured along with the TFT substrate of the display panel, and the reflected light of the finger fingerprint does not need to pass through the TFT substrate and can be directly reflected to the photodiode, so that an optical signal is converted into an electric signal, and a fingerprint image is obtained; the photoelectric fingerprint identification circuit has the advantages that the identification capability is greatly enhanced, the accuracy of identification signals is ensured, an independent fingerprint identification module is not needed, and the production cost is saved.
Drawings
Technical solutions and other advantageous effects of the present application will be made apparent from the following detailed description of specific embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an optoelectronic fingerprint identification circuit according to the present embodiment.
Fig. 2 is a driving timing chart of the electro-optical fingerprint recognition circuit of the present embodiment.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
In the description of the present application, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," etc. indicate or are based on the orientation or positional relationship shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically connected, electrically connected or can be communicated with each other; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In this application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, and may also include the first and second features not being in direct contact but being in contact with each other by way of additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The following disclosure provides many different embodiments or examples for implementing different structures of the present application. In order to simplify the disclosure of the present application, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize the application of other processes and/or the use of other materials.
As shown in fig. 1, a schematic structure diagram of an optoelectronic fingerprint identification circuit according to an embodiment of the present invention is provided. The photoelectric fingerprint identification circuit comprises a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, a fourth thin film transistor T4, a fifth thin film transistor T5, a sixth thin film transistor T6, a storage capacitor and a photodiode;
the first thin film transistor T1 receives a power supply voltage VDD, and transmits the power supply voltage VDD to a third node C when the first thin film transistor T1 is turned on; the second thin film transistor T2, the third thin film transistor T3, and the fourth thin film transistor T4 receive a Reset voltage Reset, and the fifth thin film transistor T5 and the sixth thin film transistor T6 receive a Scan signal Scan;
one end of the storage capacitor is connected to the second connection node B, and the other end of the storage capacitor is electrically connected to the drain electrode of the sixth thin film transistor T6;
one end of the photodiode is connected to the ground voltage Vss, the other end of the photodiode is connected to the first connection potential a, and the photodiode is configured to receive an optical signal and correspondingly change the gate voltage of the first thin film transistor T1 according to the optical signal.
Specifically, referring to fig. 1, in the embodiment of the present invention, the second thin film transistor T2, the third thin film transistor T3, and the fourth thin film transistor T4 form a reset compensation unit. In the Reset compensation unit, a gate electrode of the second thin film transistor T2 is configured to receive a Reset voltage Reset, a source electrode of the second thin film transistor T2 is configured to receive an initial potential Vini, and a drain electrode of the second thin film transistor T2 is connected to the first node a; the grid electrode of the third thin film transistor T3 is used for receiving a Reset voltage Reset, the source electrode of the third thin film transistor T3 is used for receiving an initial potential Vini, and the drain electrode of the third thin film transistor T3 is connected with the second node B; the gate of the fourth thin film transistor T4 is configured to receive the Reset voltage Reset, the source of the fourth thin film transistor T4 is connected to the third node C, and the drain of the fourth thin film transistor T4 is configured to receive the ground voltage Vss.
The fifth thin film transistor T5 constitutes a first switching unit; the gate of the fifth thin film transistor T5 is configured to receive the Scan signal Scan, the source of the fifth thin film transistor T5 is connected to the third node C, and the drain of the fifth thin film transistor T5 is connected to the sensing line Sense. The sixth thin film transistor T6 constitutes a second switching unit; the gate of the sixth thin film transistor T6 is configured to receive the Scan signal Scan, the source of the sixth thin film transistor T6 is connected to the first node a, and the drain of the sixth thin film transistor T6 is connected to one end of the storage capacitor. And a gate of the first thin film transistor T1 is connected to the second node B, a source of the first thin film transistor T1 is configured to receive a power supply voltage VDD, and a drain of the first thin film transistor T1 is connected to the third node C.
Specifically, in the embodiment of the present invention, the first thin film transistor T1, the second thin film transistor T2, the third thin film transistor T3, the fourth thin film transistor T4, the fifth thin film transistor T5, and the sixth thin film transistor T6 are P-type thin film transistors or N-type thin film transistors. The present embodiment is described with reference to a P-type thin film transistor.
Specifically, referring to fig. 2, fig. 2 is a driving timing diagram of the electro-optical fingerprint recognition circuit of the present embodiment. The working phase of the photoelectric fingerprint identification circuit comprises a reset phase I and a sensing phase II; referring to fig. 1 and 2, in the reset phase i, the second thin film transistor T2, the third thin film transistor T3, and the fourth thin film transistor T4 are turned on, the first thin film transistor T1, the fifth thin film transistor T5, and the sixth thin film transistor T6 are turned off, the initial potential Vini is written into the voltage of the first node a through the second thin film transistor T2, and the initial potential Vini is written into the voltage of the second node B through the third thin film transistor T3, and the ground voltage Vss is written into the voltage of the third node C through the fourth thin film transistor T4. In the sensing stage ii, the second thin film transistor T2, the third thin film transistor T3 and the fourth thin film transistor T4 are turned off, the first thin film transistor T1, the fifth thin film transistor T5 and the sixth thin film transistor T6 are turned on, at this time, the photodiode senses the change of light and converts the light signal into an electrical signal, the voltage of the second node B is affected by the photodiode and changes accordingly, the opening degree of the first thin film transistor T1 also changes accordingly, the current change generated by the first thin film transistor T1 is transmitted to the sensing line Sense through the fifth thin film transistor T5, and the sensing line Sense senses the current change of the first thin film transistor T1 so as to obtain an image of the fingerprint.
Based on the same inventive concept, the invention also provides a display device, which comprises the optical fingerprint identification circuit, and the structure of the optical fingerprint identification circuit is not repeatedly described. The display device is manufactured along with the TFT substrate by arranging the optical fingerprint identification circuit, is formed by adopting six thin film transistors and a storage capacitor of a photodiode, and the photodiode is irradiated by fingerprint reflection light to change the current flowing through the photodiode, so that the voltage of the grid electrode of the first thin film transistor T1 is influenced, the current flowing through the first thin film transistor T1 is changed, and the sensing line Sense senses the change of the current flowing through the first thin film transistor T1 to obtain a fingerprint identification image, so that the accuracy of identification signals is ensured.
In summary, the embodiment of the invention provides a photoelectric fingerprint identification circuit and a display device, where the photoelectric fingerprint identification circuit includes a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3, a fourth thin film transistor T4, a fifth thin film transistor T5, a sixth thin film transistor T6, a storage capacitor and a photodiode, the second thin film transistor T2, the third thin film transistor T3 and the fourth thin film transistor T4 form a reset compensation unit, and the reset compensation unit resets the photoelectric fingerprint identification circuit; the fifth thin film transistor T5 forms a first switching unit, and the sixth thin film transistor T6 forms a second switching unit; in the reset phase i, the second thin film transistor T2, the third thin film transistor T3, and the fourth thin film transistor T4 are turned on, the initial potential Vini is written to the voltage of the first node a and the voltage of the second node B, and the ground voltage Vss is written to the voltage of the third node C; in the sensing stage ii, the second thin film transistor T2, the third thin film transistor T3 and the fourth thin film transistor T4 are turned off, the first thin film transistor T1, the fifth thin film transistor T5 and the sixth thin film transistor T6 are turned on, at this time, the photodiode senses the change of light and converts the light signal into an electrical signal, the voltage of the second node B is affected by the photodiode, the turn-on degree of the first thin film transistor T1 is changed, and the sensing line Sense senses the change of current of the first thin film transistor T1 to obtain an image of the fingerprint. The photoelectric fingerprint identification circuit is manufactured along with the TFT substrate of the display panel, and the reflected light of the finger fingerprint does not need to pass through the TFT substrate and can be directly reflected to the photodiode, so that an optical signal is converted into an electric signal, and a fingerprint image is obtained; the photoelectric fingerprint identification circuit has the advantages that the identification capability is greatly enhanced, the accuracy of identification signals is ensured, an independent fingerprint identification module is not needed, and the production cost is saved.
The above describes in detail an optoelectronic fingerprint identification circuit and a display device provided in the embodiments of the present application, and specific examples are applied to describe the principles and implementations of the present application, where the description of the above embodiments is only for helping to understand the technical solution and core ideas of the present application; those of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.
Claims (6)
1. The photoelectric fingerprint identification circuit is characterized by comprising a first thin film transistor, a second thin film transistor, a third thin film transistor, a fourth thin film transistor, a fifth thin film transistor, a sixth thin film transistor, a storage capacitor and a photodiode;
the first thin film transistor is used for receiving a power supply voltage, the second thin film transistor, the third thin film transistor and the fourth thin film transistor are used for receiving a reset voltage, and the fifth thin film transistor and the sixth thin film transistor are used for receiving a scanning signal;
one end of the storage capacitor is connected to the second node, and the other end of the storage capacitor is electrically connected with the drain electrode of the sixth thin film transistor;
one end of the photodiode is connected with a grounding voltage, the other end of the photodiode is connected with a first node, and the photodiode is used for receiving an optical signal and correspondingly changing the grid voltage of the first thin film transistor according to the optical signal;
the grid electrode of the first thin film transistor is connected with the second node, the source electrode of the first thin film transistor is used for receiving power supply voltage, and the drain electrode of the first thin film transistor is connected with the third node;
the grid electrode of the second thin film transistor is used for receiving reset voltage, the source electrode of the second thin film transistor is used for receiving initial potential, and the drain electrode of the second thin film transistor is connected with the first node; the grid electrode of the third thin film transistor is used for receiving reset voltage, the source electrode of the third thin film transistor is used for receiving initial potential, and the drain electrode of the third thin film transistor is connected with the second node; the grid electrode of the fourth thin film transistor is connected with a reset voltage, the source electrode of the fourth thin film transistor is connected with a third node, and the drain electrode of the fourth thin film transistor is used for receiving the grounding voltage;
the grid electrode of the fifth thin film transistor is used for receiving a scanning signal, the source electrode of the fifth thin film transistor is connected with the third node, and the drain electrode of the fifth thin film transistor is connected with the induction line;
the grid electrode of the sixth thin film transistor is used for receiving a scanning signal, the source electrode of the sixth thin film transistor is connected with the first node, and the drain electrode of the sixth thin film transistor is connected with one end of the storage capacitor;
the working phase of the photoelectric fingerprint identification circuit comprises a reset phase and a sensing phase;
in a reset stage, the second thin film transistor, the third thin film transistor and the fourth thin film transistor are turned on, an initial potential is written into the voltage of the first node and the voltage of the second node, and a grounding voltage is written into the voltage of the third node;
in the sensing stage, the second thin film transistor, the third thin film transistor and the fourth thin film transistor are turned off, the first thin film transistor, the fifth thin film transistor and the sixth thin film transistor are turned on, at this time, the photodiode senses the change of light and converts the light signal into an electric signal, the voltage of the second node is influenced by the photodiode, the turn-on degree of the first thin film transistor is changed, and the sensing line senses the current change of the first thin film transistor to obtain an image of the fingerprint.
2. The electro-optical fingerprint recognition circuit according to claim 1, wherein the second thin film transistor, the third thin film transistor, and the fourth thin film transistor constitute a reset compensation unit.
3. The electro-optical fingerprint recognition circuit according to claim 1, wherein the fifth thin film transistor constitutes a first switching unit.
4. The electro-optical fingerprint recognition circuit according to claim 1, wherein the sixth thin film transistor constitutes a second switching unit.
5. The electro-optical fingerprint recognition circuit according to claim 1, wherein the first thin film transistor, the second thin film transistor, the third thin film transistor, the fourth thin film transistor, the fifth thin film transistor, and the sixth thin film transistor are P-type thin film transistors or N-type thin film transistors.
6. A display device comprising an electro-optical fingerprint recognition circuit as claimed in any one of claims 1 to 5.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010807935.6A CN112052743B (en) | 2020-08-12 | 2020-08-12 | Photoelectric fingerprint identification circuit and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010807935.6A CN112052743B (en) | 2020-08-12 | 2020-08-12 | Photoelectric fingerprint identification circuit and display device |
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| CN112052743B true CN112052743B (en) | 2023-08-04 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106598327A (en) * | 2016-11-30 | 2017-04-26 | 京东方科技集团股份有限公司 | Touch display driving unit circuit, driving method, circuit and display device |
| CN107908310A (en) * | 2017-11-13 | 2018-04-13 | 京东方科技集团股份有限公司 | Image element circuit and its driving method, display device |
| CN110008860A (en) * | 2019-03-21 | 2019-07-12 | 武汉华星光电技术有限公司 | Fingerprint recognition framework and touch panel |
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- 2020-08-12 CN CN202010807935.6A patent/CN112052743B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106598327A (en) * | 2016-11-30 | 2017-04-26 | 京东方科技集团股份有限公司 | Touch display driving unit circuit, driving method, circuit and display device |
| CN107908310A (en) * | 2017-11-13 | 2018-04-13 | 京东方科技集团股份有限公司 | Image element circuit and its driving method, display device |
| CN110008860A (en) * | 2019-03-21 | 2019-07-12 | 武汉华星光电技术有限公司 | Fingerprint recognition framework and touch panel |
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