CN112039341A - Driving method of symmetrical half-bridge LC series resonance sine power conversion circuit - Google Patents
Driving method of symmetrical half-bridge LC series resonance sine power conversion circuit Download PDFInfo
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/22—Conversion of DC power input into DC power output with intermediate conversion into AC
- H02M3/24—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters
- H02M3/28—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC
- H02M3/325—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of DC power input into DC power output with intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate AC using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
- H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
The application discloses a driving method of a symmetrical half-bridge LC series resonance sine power conversion circuit, which comprises the following steps: step S1, an LC series resonance circuit is connected in series between the primary end of the high-frequency transformer and the symmetrical half-bridge circuit; step S2, determining the switching frequency of the symmetrical half-bridge sine power conversion circuit according to the resonance angular frequency of the LC series resonance circuit; and step S3, sending a transistor turn-on instruction to the symmetrical half-bridge sinusoidal power conversion circuit according to the switching frequency, wherein the transistor turn-on instruction is used for controlling the transistors in the symmetrical half-bridge sinusoidal power conversion circuit to be turned on or off. Through the technical scheme in this application, the symmetrical half-bridge circuit produces the fixed width chopping voltage for the frequency matching of resonant tank way, chopping voltage and secondary synchronous rectification maintains the voltage gain of converting circuit under different load conditions invariable, has realized the sinusoidal power conversion function of symmetrical half-bridge series resonance.
Description
Technical Field
The application relates to the technical field of direct current conversion, in particular to a driving method of a symmetrical half-bridge LC series resonance sine power conversion circuit.
Background
With the rapid development of electronic equipment, the power density requirement of the dc-dc converter in the dc-dc conversion technology field is higher and higher, and in order to reduce the size of passive devices such as an inductor and a capacitor, the operating frequency of the dc-dc converter is higher and higher, and in a high-frequency operating mode, the soft switching of the converter is particularly important, and the resonant converter is a typical form of the soft switching converter.
As early as 60 s in the last century, b.d. bedford and r.g. hoft et al, Principles of Inverter Circuits, proposed the concept of resonant converters, which are presented in topologies with various modifications, mainly classified into Series Resonance (SRC), Parallel Resonance (PRC) and quasi-resonance (QRC).
The half-bridge series resonance converting circuit is a relatively wide soft switch topology used in medium power level, and the working principle of the half-bridge series resonance converting circuit is that the gain of a converter is adjusted by adjusting the switching frequency of a half bridge to realize negative feedback of output voltage after sampling and error comparison of load voltage.
In the prior art, the gain of the output of the half-bridge series resonant conversion circuit is usually affected by the load condition, and particularly in an open-loop control environment, the transient response capability of the half-bridge series resonant conversion circuit is weak, and the soft switching characteristic of a transistor is weak.
Disclosure of Invention
The purpose of this application lies in: the soft switching of the primary half-bridge and the secondary full-bridge synchronous rectification transistors is realized by the drive of the symmetrical half-bridge LC series resonance sine power conversion circuit, the load stability is good, the transient response capability is strong, and the voltage gain characteristic of open-loop constant proportion conversion is realized.
The technical scheme of the first aspect of the application is as follows: the driving method is suitable for the symmetrical half-bridge sine power conversion circuit, the symmetrical half-bridge sine power conversion circuit comprises a symmetrical half-bridge circuit, a high-frequency transformer and a rectifying circuit, and the driving method comprises the following steps: step S1, an LC series resonance circuit is connected in series between the primary end of the high-frequency transformer and the symmetrical half-bridge circuit; step S2, determining the switching frequency of the symmetrical half-bridge sine power conversion circuit according to the resonance angular frequency of the LC series resonance circuit; and step S3, sending a transistor turn-on instruction to the symmetrical half-bridge sinusoidal power conversion circuit according to the switching frequency, wherein the transistor turn-on instruction is used for controlling the transistors in the symmetrical half-bridge sinusoidal power conversion circuit to be turned on or off.
In any one of the above technical solutions, further, the control end of the symmetric half-bridge circuit is connected with two half-bridge transistors, the control end of the rectification circuit is provided with four full-bridge synchronous rectification transistors, the transistor conduction command is sent to the control end of the symmetric half-bridge circuit and the control end of the rectification circuit by the sinusoidal transformation control circuit containing two output ends, wherein, the first output end of the sinusoidal transformation control circuit is provided with two grid voltage division drive circuits, and is connected to the grid of the first half-bridge transistor and the grid of the second half-bridge transistor at the control end of the symmetric half-bridge circuit in sequence, the second output end of the sinusoidal transformation control circuit is provided with four grid voltage division drive circuits, and is connected to the grids of the four synchronous full-bridge.
In any one of the above technical solutions, further, the transistor turn-on command includes: a first drive voltage signal and a second drive voltage signal; a first driving voltage signal is sent to the gate of the first half-bridge transistor, the gate of the first full-bridge synchronous rectification transistor and the gate of the fourth full-bridge synchronous rectification transistor; the second drive voltage signal is sent to the gate of the second half-bridge transistor, the gate of the second full-bridge synchronous rectification transistor, and the gate of the third full-bridge synchronous rectification transistor, wherein the phases of the first drive voltage signal and the second drive voltage signal are interleaved.
In any of the above technical solutions, further, the sine conversion control circuit includes a high-frequency pulse width controller, a high-frequency gate driver, and an isolation transformer connected in sequence, where the isolation transformer is connected to the first output end and the second output end, a secondary end of the isolation transformer is provided with six coils, the first coil and the second coil are connected to the first output end, the third coil, the fourth coil, the fifth coil, and the sixth coil are connected to the second output end, the first coil, the third coil, and the fifth coil are first dotted ends, the second coil, the fourth coil, and the sixth coil are second dotted ends, and the first dotted ends and the second dotted ends are phase-interleaved.
In any one of the above technical solutions, further, a gate voltage division driving circuit is disposed between each coil of the secondary side of the isolation transformer and the first output end and the second output end, and the gate voltage division driving circuit includes: the transient suppression circuit comprises four high-frequency diodes, a transient suppression diode and three grid driving circuit resistors, wherein the cathode of the first high-frequency diode is connected with the anode of the second high-frequency diode and then connected with the positive end of the coil, and the anode of the first high-frequency diode is connected with one end of the grid driving circuit resistor; after the second high-frequency diode, the third high-frequency diode and the fourth high-frequency diode are connected in series in the same phase, the cathode of the fourth high-frequency diode is connected to one end of a second grid drive circuit resistor, and the other end of the second grid drive circuit resistor is connected with the other end of the grid drive circuit resistor and connected to the grid of the transistor; after the transient suppression diode and the third grid drive circuit resistor are connected in parallel, the cathode of the transient suppression diode is connected to the other end of the second grid drive circuit resistor, and the anode of the transient suppression diode is connected to the negative end of the coil and connected to the source of the transistor.
The technical scheme of the second aspect of the application is as follows: there is provided a symmetric half-bridge LC series resonant sinusoidal power conversion circuit, the power conversion circuit comprising: the circuit comprises a symmetrical half-bridge circuit, an LC series resonance circuit, a high-frequency transformer, a rectifying circuit and a sine conversion control circuit; the LC series resonance circuit is connected between two output ends of the symmetrical half-bridge circuit after being connected with the primary end of the high-frequency transformer in series, and the secondary end of the high-frequency transformer is connected with the input end of the rectifying circuit; the first output end of the sine conversion control circuit is connected to the control end of the symmetrical half-bridge circuit, the second output end of the sine conversion control circuit is connected to the control end of the rectifying circuit, and the sine conversion control circuit is used for sending a conduction instruction to the symmetrical half-bridge circuit and the rectifying circuit.
In any one of the above technical solutions, further, the two output terminals of the symmetric half-bridge circuit include a first output terminal and a second output terminal, and the symmetric half-bridge circuit specifically includes: the circuit comprises two half-bridge transistors, two half-bridge voltage-sharing capacitors and two half-bridge voltage-sharing resistors; the half-bridge transistors are field effect transistors, the source electrode of the first half-bridge transistor is connected in series with the drain electrode of the second half-bridge transistor and is connected with the first output end of the symmetrical half-bridge circuit, and the drain electrode of the first half-bridge transistor and the source electrode of the second half-bridge transistor are respectively connected with the positive input end and the negative input end of the symmetrical half-bridge circuit; two half-bridge voltage-sharing capacitors are connected in series after being connected in parallel with one half-bridge voltage-sharing resistor respectively, and the second output ends of the symmetrical half-bridge circuits are connected between the two half-bridge voltage-sharing capacitors connected in series.
In any one of the above technical solutions, further, the LC series resonant circuit includes a resonant capacitor and a resonant inductor connected in series; the resonance capacitor is connected to a first output end of the symmetrical half-bridge circuit, the resonance inductor is connected to a first port of the primary end of the high-frequency transformer, and the resonance capacitor, the resonance inductor and the primary end of the high-frequency transformer are connected in series to form a series resonance tank circuit; the second port of the primary side of the high frequency transformer is connected to the second output terminal of the symmetrical half bridge circuit.
In any one of the above technical solutions, further, the rectifier circuit includes: four full-bridge synchronous rectifier transistors and a filter capacitor; the four full-bridge synchronous rectifier transistors are field effect transistors, and form a bridge rectifier circuit, wherein a first bridge circuit of the bridge rectifier circuit is formed by a first full-bridge synchronous rectifier transistor and a second full-bridge synchronous rectifier transistor, and a second bridge circuit of the bridge rectifier circuit is formed by a third full-bridge synchronous rectifier transistor and a fourth full-bridge synchronous rectifier transistor; the filter capacitor is connected in parallel with two ends of the bridge rectifier circuit and arranged at the output end of the rectifier circuit.
In any of the above technical solutions, further, the first output end of the sinusoidal conversion control circuit is provided with two gate voltage division driving circuits, and the two gate voltage division driving circuits are sequentially connected to the gate of the first half-bridge transistor and the gate of the second half-bridge transistor; and the second output end of the sine conversion control circuit is provided with four grid voltage division driving circuits which are sequentially connected with the grids of the four full-bridge synchronous rectification transistors.
In any one of the above technical solutions, further, the turn-on command includes: a first drive voltage signal and a second drive voltage signal; a first driving voltage signal is sent to the gate of the first half-bridge transistor, the gate of the first full-bridge synchronous rectification transistor and the gate of the fourth full-bridge synchronous rectification transistor; a second drive voltage signal is sent to the gate of the second half-bridge transistor, the gate of the second full-bridge synchronous rectification transistor, and the gate of the third full-bridge synchronous rectification transistor, wherein the first drive voltage signal and the second drive voltage signal are opposite in magnitude.
In any one of the above technical solutions, further, a switching frequency of the conduction command is equal to a resonance angular frequency of the LC series resonant circuit.
In any of the above technical solutions, further, the field effect transistor is an N-channel field effect transistor.
In any of the above technical solutions, further, the switching frequency of the field effect transistor is 1MHz, the dead time is 10nS, the resonant capacitance is 4.7nF, and the resonant inductance is 5.39 uH.
The beneficial effect of this application is:
1. and the soft switching control of the synchronous rectifying transistors of the rectifying circuit and the symmetrical half-bridge circuit is realized. This application sets up LC series resonance circuit through the output at symmetry half-bridge circuit, is adjusted transistor switching frequency by sinusoidal conversion controller again, makes it the same with LC series resonance circuit's resonant frequency, and resonant current's wave form is the sine wave with half-bridge switch chopper voltage waveform same phase promptly to realized that the electric current is zero when transistor drain voltage conversion, realized zero voltage conversion, symmetry half-bridge circuit and rectifier circuit promptly, synchronous rectifier transistor's soft switch control.
2. The load power supply voltage has good stability and voltage gain of open-loop constant proportion conversion. The switching frequency of the transistor is adjusted by the sine conversion controller, so that the switching frequency of the transistor is the same as the resonant frequency of the LC series resonant circuit, and therefore the voltage gain of the circuit is not related to the Q value (quality factor) of the resonant tank circuit, namely the open-loop gain of the circuit is not related to the size of a load, and the stability of the power supply voltage of the load is good.
3. The transient response capability is strong. In the present application, the half-bridge chopping duty cycle is maximized to a square wave voltage. When the load suddenly changes, the load response is completed by adjusting the primary resonance current through the direct-current constant-ratio transformation characteristic (the physical characteristic of the circuit) of the half-bridge LC series resonance sinusoidal power conversion circuit without pulse width adjustment feedback, and the empty and full load transient response adjustment can be completed in two or three switching periods.
Therefore, by the driving method of the symmetrical half-bridge LC series resonance sine power conversion circuit and the corresponding conversion circuit, primary and secondary currents of the transformer are sine waves, soft switching of primary half-bridge and secondary full-bridge synchronous rectification transistors is achieved, load stability is good, transient response capability is strong, and the voltage gain characteristic of open-loop constant proportion conversion is achieved.
Drawings
The advantages of the above and/or additional aspects of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of a symmetric half-bridge LC series resonant sinusoidal power conversion circuit according to one embodiment of the present application;
FIG. 2 is a schematic diagram of an equivalent simplification of the series resonant gain according to one embodiment of the present application;
FIG. 3 is a schematic diagram of a simulation circuit according to an embodiment of the present application;
FIG. 4 is a schematic block diagram of a sinusoidal transformation controller according to one embodiment of the present application;
FIG. 5 is a schematic diagram of an isolation transformer according to an embodiment of the present application;
FIG. 6 is a schematic diagram of a gate voltage division driving circuit according to an embodiment of the present application;
FIG. 7 is a diagram of soft-switching waveform simulations according to an embodiment of the present application;
FIG. 8 is a simulation graph of load transient response according to an embodiment of the present application;
FIG. 9 is a simulation of an output voltage load stability voltage waveform according to an embodiment of the present application;
fig. 10 is a drain-source voltage waveform, a resonant current waveform, a resonant voltage waveform across a resonant capacitor according to an embodiment of the present application.
Detailed Description
In order that the above objects, features and advantages of the present application can be more clearly understood, the present application will be described in further detail with reference to the accompanying drawings and detailed description. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, however, the present application may be practiced in other ways than those described herein, and therefore the scope of the present application is not limited by the specific embodiments disclosed below.
The first embodiment is as follows:
the present embodiment will be described below with reference to fig. 1 to 3.
According to the driving method of the symmetrical half-bridge LC series resonance sine power conversion circuit in the embodiment, the symmetrical half-bridge conversion circuit generates high-frequency fixed-width chopping voltage, the chopping voltage is connected with a resonant tank circuit formed by connecting a resonant capacitor, a resonant inductor and a high-frequency transformer in series, and the sinusoidal conversion controller is used for controlling the resonant tank circuit, the chopping voltage and the secondary synchronous rectification frequency to be matched, so that sine wave resonant current which is the same in phase and frequency as the chopping voltage is formed in the resonant tank circuit, soft switching of two half-bridge transistors and four synchronous rectification transistors is realized, constant gain of the conversion circuit under different load conditions is also maintained, and the function of symmetrical half-bridge series resonance sine power conversion is realized. The driving method of the symmetrical half-bridge LC series resonance sine power conversion circuit and the corresponding conversion circuit of the invention ensure that the primary current and the secondary current of the transformer are both sine waves, realize the soft switching of the primary half-bridge and the secondary full-bridge synchronous rectification transistors, have good load stability and strong transient response capability, and have the voltage gain characteristic of open-loop constant proportion conversion.
As shown in fig. 1, the present embodiment provides a driving method of a symmetric half-bridge LC series resonant sinusoidal power conversion circuit, including: first half-bridge transistor 1, second half-bridge transistor 2, resonant capacitor 3, resonant inductor 4, high frequency transformer 5, first half-bridge voltage-sharing capacitor 6, second half-bridge voltage-sharing capacitor 7, first half-bridge voltage-sharing resistor 8, second half-bridge voltage-sharing resistor 9, first full-bridge synchronous rectifier transistor 10, second full-bridge synchronous rectifier transistor 11, third full-bridge synchronous rectifier transistor 12, fourth full-bridge synchronous rectifier transistor 13, filter capacitor 14 and sinusoidal transformation control circuit 15 constitute, wherein, first half-bridge transistor 1, second half-bridge transistor 2, first full-bridge synchronous rectifier transistor 10, second full-bridge synchronous rectifier transistor 11, third full-bridge synchronous rectifier transistor 12 and fourth full-bridge synchronous rectifier transistor 13 are N channel field effect transistors. The sine conversion control circuit 15 generates drive signals of six field effect transistors, i.e., transistor on commands.
A symmetrical half-bridge circuit is formed by a first half-bridge transistor 1, a second half-bridge transistor 2, a first half-bridge voltage-sharing capacitor 6, a second half-bridge voltage-sharing capacitor 7, a first half-bridge voltage-sharing resistor 8 and a second half-bridge voltage-sharing resistor 9, wherein the drain electrode of the first half-bridge transistor 1 is connected with the positive end of an input direct-current power source Vin, namely the positive input end of the symmetrical half-bridge circuit, the source electrode of the second half-bridge transistor 2 is connected with the negative end of the input direct current Vin, namely the negative pole input end of the symmetrical half-bridge circuit, one end of the first half-bridge voltage-sharing capacitor 6 is connected with the positive end of the input direct current source Vin after being connected with the first half-bridge voltage-sharing resistor 8 in parallel, the other end is connected with one end of the second half-bridge voltage-sharing capacitor 7 and the second half-bridge voltage-sharing resistor 9 which are connected with each other in parallel, the other end is connected with the negative end of the input direct current source Vin, a voltage equalizing point of 1/2Vin for equalizing the input voltage is formed on the first half-bridge voltage equalizing capacitor 6 and the second half-bridge voltage equalizing capacitor 7. The connection point of the source of the first half-bridge transistor 1 and the drain of the second half-bridge transistor 2 is used as the first output end of the symmetrical half-bridge circuit, and the connection point of the first half-bridge voltage-sharing capacitor 6 and the second half-bridge voltage-sharing capacitor 7 is used as the second output end of the symmetrical half-bridge circuit.
A first full-bridge synchronous rectification transistor 10, a second full-bridge synchronous rectification transistor 11, a third full-bridge synchronous rectification transistor 12, a fourth full-bridge synchronous rectification transistor 13 and a filter capacitor 14 form a rectification circuit, the source of the first full-bridge synchronous rectification transistor 10 is connected to the drain of the second full-bridge synchronous rectification transistor 11, the source of the third full-bridge synchronous rectification transistor 12 is connected to the drain of the fourth full-bridge synchronous rectification transistor 13, the drain of the first full-bridge synchronous rectification transistor 10 is connected to the drain of the third full-bridge synchronous rectification transistor 12 and then connected to one end of the filter capacitor 14 as the positive terminal of the output dc power supply, the source of the second full-bridge synchronous rectification transistor 11 is connected to the source of the fourth full-bridge synchronous rectification transistor 13 and then connected to the other end of the filter capacitor 14 as the negative terminal of the output dc power supply, and the positive and negative terminals of the output dc power supply are connected to the load 16.
The resonance capacitor 3 and the resonance inductor 4 form an LC series resonance circuit, and then are connected in series with the primary side of the high-frequency transformer 5 to form a series resonance tank circuit, namely, one end of the resonance capacitor 3 of the series resonance tank circuit is connected with the connection point of the source electrode of the first half-bridge transistor 1 and the drain electrode of the second half-bridge transistor 2, and one end of the primary side of the high-frequency transformer 5 is connected with the connection point of the first half-bridge voltage-sharing capacitor 6 and the second half-bridge voltage-sharing capacitor 7.
The secondary side of the high-frequency transformer 5 is connected with the source electrode of the first full-bridge synchronous rectification transistor 10 in one end, and is connected with the source electrode of the third full-bridge synchronous rectification transistor 12 in the other end.
The sinusoidal conversion controller 15 has 6 total grid voltage-dividing driving circuits, wherein 2 grid voltage-dividing driving circuits form a first output terminal, the remaining 4 grid voltage-dividing driving circuits form a second output terminal, the first output terminal is sequentially connected to the grids of the first half-bridge transistor 1 and the second half-bridge transistor 2, and the second output terminal is sequentially connected to the grids of the first full-bridge synchronous rectification transistor 10, the second full-bridge synchronous rectification transistor 11, the third full-bridge synchronous rectification transistor 12 and the fourth full-bridge synchronous rectification transistor 13.
The sine conversion controller 15 outputs the gate driving voltage signals sent to the first half-bridge transistor 1, the first full-bridge synchronous rectification transistor 10 and the fourth full-bridge synchronous rectification transistor 13, and the driving voltage signals are electrically isolated, have the same phase and the same amplitude, and can be recorded as a first driving signal.
The sine conversion controller 15 outputs gate driving voltage signals to the second half-bridge transistor 2, the second full-bridge synchronous rectification transistor 11 and the third full-bridge synchronous rectification transistor 12, the driving voltage signals are electrically isolated, have the same phase and the same amplitude, and can be recorded as a second driving signal, and the phase of the first driving signal is opposite to that of the second driving signal. The first driving signal and the second driving signal complete the soft switching control of the symmetrical half-bridge circuit and the rectifying circuit with the series resonant tank circuit.
The sine conversion controller 15 is an open-loop control, and generates a driving signal whose voltage frequency and pulse width are independent of the output power voltage, the pulse width is fully conducted except for a protection dead zone common to the field effect transistors, and the frequency is the same as the frequency of the LC series resonance circuit composed of the resonance capacitor 3 and the resonance inductor 4.
The secondary rectification of the high-frequency transformer 5 is completed by a full-bridge synchronous rectification circuit composed of four field effect transistors including a first full-bridge synchronous rectification transistor 10, a second full-bridge synchronous rectification transistor 11, a third full-bridge synchronous rectification transistor 12 and a fourth full-bridge synchronous rectification transistor 13.
When the sine-switching controller 15 generates the transistor turn-on command, as shown in fig. 2, the square-wave voltage source U is a square-wave voltage source U using a square-wave voltage source equivalent symmetrical half-bridge circuit and using the resistive load equivalent high- frequency transformers 5 and 21sFrequency of FsResonant capacitance of CrResonant inductance of LrAnd 24 is a load R.
To input voltage UsFourier expansion is performed to obtain a corresponding transfer function h(s):
setting:
in the formula, ω0For resonant angular frequencies, Q is the quality factor, so the transfer function h(s) can be written as:
therefore, the amplitude-frequency characteristic of the equivalent circuit can be obtained as follows:
when n is 1, that is, when the switching frequency in the transistor on command is equal to the resonance angular frequency of the LC series resonant circuit, i.e., when the switching frequency in the transistor on command is equal to the resonance angular frequency, | H (j ω) is analyzed by the amplitude-frequency characteristic formula of the equivalent circuits) I 1 is always true, i.e. the gain is independent of the quality factor Q and the phase is independent of the input voltage UsAnd (5) the consistency is achieved.
In this embodiment, an implementation manner of a symmetric half-bridge LC series resonance sinusoidal power conversion circuit is provided, as shown in fig. 3, so as to verify that the conversion circuit in this embodiment has gain stability and soft switching characteristics under different load conditions, in fig. 3, the conversion circuit is simplified, a full-bridge rectification circuit and a variable resistor are used to equivalently replace the high-frequency transformer 5 and the load 16, a field-effect tube in the rectification circuit is replaced by an ideal diode, the field-effect tube in the symmetric half-bridge circuit selects a switching frequency of 1MHz, a dead time of 10nS, a resonant inductor of 5.39uH, a resonant capacitor of 4.7nF, an input voltage of 300V, a voltage-sharing capacitor of 0.22uF, and a voltage-sharing resistor of 40k Ω.
Example two:
the second embodiment will be described below with reference to fig. 4 to 6.
In the second embodiment, an implementation manner of the sine conversion controller is shown, as shown in fig. 4, the sine conversion control circuit 15 includes a pulse width controller 151, a gate driver 152 and an isolation transformer 153, which are sequentially connected, and the sine conversion control circuit 15 further includes: the driving circuit comprises a first driving circuit and a second driving circuit, wherein the first driving circuit is arranged at a first output end of the sine conversion control circuit 15, and the second driving circuit is arranged at a second output end of the sine conversion control circuit 15;
the output end of the pulse width controller 151 is connected to the input end of the gate driver 152, and the pulse width controller 151 is configured to input a control signal to the gate driver 152;
specifically, the pulse width controller 151 includes a clock oscillator, a flip-flop and a logic gate, and a control signal with a constant frequency and a constant width can be generated by a conventional technical means in the prior art.
Preferably, the pulse width controller 151 is an open-loop controller, and the driving voltage frequency and the on pulse width of the pulse width controller 151 are determined by the resonance parameters of the LC series resonant circuit. The set driving voltage frequency and the conduction pulse width are kept constant, the pulse width is fully conducted except for a protection dead zone for preventing the transistors from being in common, namely the duty ratio of the conduction pulse width is 49%.
The pulse width controller 151 is a high frequency pulse width controller with a frequency of 750 kHz.
The output end of the gate driver 152 is connected to the primary end of the isolation transformer 153, in this embodiment, a drive integrated circuit such as UCC27714 is provided, and the gate driver 152 is used for enhancing the current driving capability of the control signal through the totem pole of the drive integrated circuit;
the gate driver 152 is a high frequency gate driver with a frequency of 750 kHz.
The secondary terminal of the isolation transformer 153 is connected to the first driving circuit and the second driving circuit respectively, the first driving circuit is arranged at the first output terminal, and is connected to the gate of the first half-bridge transistor 1 and the gate of the second half-bridge transistor 2 at the control terminal of the symmetrical half-bridge circuit, the first driving circuit is used for sending a first driving voltage signal, the second driving circuit is arranged at the second output terminal, and is connected to the gates of the four full-bridge synchronous rectification transistors (transistors 10 to 13), and the second driving circuit is used for sending a second driving voltage signal.
Preferably, the same amplitude and opposite phase can be realized by adjusting the same-name end of the transformer, and in this embodiment, the amplitude of the first driving voltage signal is set to be opposite to that of the second driving voltage signal by adjusting the same-name end of the transformer.
Further, six coils are arranged at the side secondary end of the isolation transformer 153; the first coil 32 and the second coil 33 are connected to a first driving circuit, and the third coil 34, the fourth coil 35, the fifth coil 36 and the sixth coil 37 are connected to a second driving circuit, wherein the first coil 32, the third coil 34 and the fifth coil 36 are first dotted terminals, the second coil 33, the fourth coil 35 and the sixth coil 37 are second dotted terminals, and the first dotted terminals and the second dotted terminals are staggered in phase.
Specifically, as shown in fig. 5, the isolation transformer 153 completes the timing control of the six interleaved driving signals through the same-name terminal design, and implements the switching control of the two half-bridge transistors and the synchronous rectification control of the four synchronous rectification transistors.
The primary side 31 of the isolation transformer 153 is connected to the gate driver 152, and receives the control signal Sp with enhanced current driving capability, the positive terminals of the first coil 32, the third coil 34 and the fifth coil 36 on the secondary side of the isolation transformer 153 are dotted terminals, the generation signals Ss1, Ss3 and Ss5 are in phase with the control signal Sp, the negative terminals of the second coil 33, the fourth coil 35 and the sixth coil 37 are dotted terminals, and the generation signals Ss2, Ss4 and Ss6 are 180 ° out of phase with the control signal Sp, that is, the phases are staggered.
Further, a first output end of the isolation transformer 153 is connected to the gates of the first half-bridge transistor 1 and the second half-bridge transistor 2 through two paths of gate voltage division driving circuits, which are referred to as first gate voltage division driving circuits, and a second output end of the isolation transformer 153 is connected to the gates of four full-bridge synchronous rectification transistors (transistors 10 to 13) through four paths of gate voltage division driving circuits, which are referred to as second gate voltage division driving circuits, wherein the first coil 32 and the second coil 33 are respectively connected to the gates of two half-bridge transistors connected in series in the symmetrical half-bridge resonant circuit through two paths of first gate voltage division driving circuits, and four paths of second gate voltage division driving circuits; the third coil 34, the fourth coil 35, the fifth coil 36, and the sixth coil 37 are connected to the gates of the four synchronous rectification transistors in the synchronous rectification circuit, respectively, sequentially through the four second gate voltage division driving circuits.
Specifically, the signals Ss1 and Ss2 correspond to the first driving voltage signals S1 and S2, and are respectively transmitted to the gates of the first half-bridge transistor 1 and the second half-bridge transistor 2 through two first gate voltage division driving circuits, and the signals Ss1 and Ss2 are electrically isolated and are staggered in phase.
The signals Ss3, Ss4, Ss5 and Ss6 correspond to the second driving voltage signals Sa1, Sa2, Sa3 and Sa4 in sequence, and are transmitted to the gates of the synchronous rectification transistors 10, 11, 12 and 13 through four paths of second gate voltage division driving circuits, the signals Ss3, Ss4, Ss5 and Ss6 are electrically isolated, and the signals Ss3 and Ss5 are staggered in phase with the signals Ss4 and Ss 6.
Further, the first gate voltage division driving circuit and the second gate voltage division driving circuit have the same structure. As shown in fig. 6, in one implementation manner of the first gate voltage division driving circuit in this embodiment, the first gate voltage division driving circuit includes: four high frequency diodes, transient suppression diode 48 and gate drive circuit resistance;
the cathode of the first high-frequency diode 42 is connected to the anode of the second high-frequency diode 44 and then to the positive terminal of the coil, and the anode of the first high-frequency diode 42 is connected to one end of the first gate drive circuit resistor 43; after the second high-frequency diode 44, the third high-frequency diode 45 and the fourth high-frequency diode 46 are connected in series in the same phase, the cathode of the fourth high-frequency diode 46 is connected to one end of the second gate driving circuit resistor 47, and the other end of the second gate driving circuit resistor 47 is connected to the other end of the first gate driving circuit resistor 43 and to the gates of the transistors 410 (i.e., the synchronous rectification transistors 10, 11, 12 and 13 and the half-bridge transistors 1 and 2); with the transient suppression diode 48 and the third gate drive circuit resistor 49 connected in parallel, the cathode of the transient suppression diode 48 is connected to the other end of the second gate drive circuit resistor 47 and the anode of the transient suppression diode 48 is connected to the negative terminal of the coil and to the source of the transistor 410.
Specifically, the number of two high-frequency diodes in the first gate voltage division driving circuit can be determined according to actual requirements, and the first gate voltage division driving circuit enables the on-state voltage of the transistor 410 to be lower than the off-state voltage by two diode drops, for example, for the driving of a gallium nitride transistor of GS66508 model, the forward withstand voltage is 7V, the reverse withstand voltage is-10V, and the positive and negative voltages of the same driving signal reaching the gate sources are different, in this embodiment, the positive voltage is set to be 5V, and the negative voltage is greater than the positive voltage by two diode drops, that is, the negative voltage is-6.2V, so that the saturated on and the fast off of the transistor 410 are realized, and the voltage tolerance design between the gate sources is ensured.
Adjusting the second gate driving circuit resistor 37 can change the conducting front edge of the transistor 410 if the gate-source parasitic capacitance of the transistor 410 is CgsThe resistance of the second gate driving circuit resistor 47 is RgThe positive voltage of the signal SsX (X ═ 1,2, … 6) is vgThe gate-source voltage of the transistor 410 is v0Then, there is the following relationship in the rising process because the third gate driving circuit resistor 49 has a larger resistance value, and the voltage division effect of the second gate driving circuit resistor 47 and the third gate driving circuit resistor 49 is neglected.
In the formula, vthTo turn on the threshold voltage of the transistor, τ is the transistor turn on front time.
The resistance of the second gate driving circuit resistor 47 can be adjusted to be RgThe size of the crystal is controlled to realize the control of tau, and when tau is too small, the crystal is causedThe driving signal of the transistor rings severely, and when τ is too large, the switching loss of the transistor 410 is too large.
Similarly, the control of the turned-off trailing edge of the transistor can be realized by adjusting the resistance of the first gate driving circuit resistor 43.
Example three:
the third embodiment will be described below with reference to fig. 7 to 10.
The present embodiment provides a driving method for a symmetric half-bridge LC series resonant sinusoidal power conversion circuit, which is applied to the circuits in the first and second embodiments, and the driving method in the present embodiment drives the circuits, and the driving method includes:
step S1, an LC series resonance circuit is connected in series between the primary end of the high-frequency transformer and the symmetrical half-bridge circuit;
step S2, determining the switching frequency of the symmetrical half-bridge sine power conversion circuit according to the resonance angular frequency of the LC series resonance circuit;
and step S3, sending a transistor turn-on instruction to the symmetrical half-bridge sinusoidal power conversion circuit according to the switching frequency, wherein the transistor turn-on instruction is used for controlling the transistors in the symmetrical half-bridge sinusoidal power conversion circuit to be turned on or off.
Taking the parameters in the first and second embodiments as examples, the driving method in this embodiment is subjected to simulation verification, and the simulation results are shown in fig. 7 to 10.
As shown in fig. 7, i is a resonant current waveform, v is a drain waveform of a transistor on the half-bridge transistor, and it can be seen that the resonant current crosses zero at the time of drain voltage switching, that is, there is no cross loss between voltage and current at the time of switching of the half-bridge transistor, that is, soft switching is realized.
As shown in fig. 8, five different load conditions with resistances of 10 Ω, 20 Ω, 50 Ω, 100 Ω, and 10k Ω are provided, and from 0, each load state is maintained for 2ms in sequence, the output load voltage is 150V, and the load is measured according to Pout＝U2Calculated as/R:
the load power is 2.25kW at 10 omega;
the load power is 1.125kW at 20 omega;
the load power is 450W at 50 omega;
the load power is 225W at 100 omega;
the load power is 2.25W at 10k omega;
when the power of the load is switched from five states of 2.25kW to 1.125kW, 450W, 225W, 2.25W and the like, the voltage fluctuation is shown in fig. 9, and it can be seen that if the load is designed to be 1.125kW, the voltage fluctuation of the empty load is 1.445V, and the voltage fluctuation U% — 1.445/148.8 < 1%.
As shown in fig. 10, the switching frequency is set to 451kHz, a curve 100 in fig. 10 is a drain-source waveform of a half-bridge transistor, i.e., a drain-voltage waveform with the source of the transistor as a reference point, a curve 200 is a resonant current waveform, and a curve 300 is a resonant voltage waveform at both ends of a resonant capacitor. As can be seen from FIG. 10, the working current waveform is close to a sine wave, the switch crossover is negligible, the soft switching characteristic is good, and the practical effect of the circuit of the invention is verified.
The technical solution of the present application is described in detail above with reference to the accompanying drawings, and the present application provides a driving method of a symmetric half-bridge LC series resonant sinusoidal power conversion circuit, where the driving method includes: step S1, an LC series resonance circuit is connected in series between the primary end of the high-frequency transformer and the symmetrical half-bridge circuit; step S2, determining the switching frequency of the symmetrical half-bridge sine power conversion circuit according to the resonance angular frequency of the LC series resonance circuit; and step S3, sending a transistor turn-on instruction to the symmetrical half-bridge sinusoidal power conversion circuit according to the switching frequency, wherein the transistor turn-on instruction is used for controlling the transistors in the symmetrical half-bridge sinusoidal power conversion circuit to be turned on or off. According to the technical scheme, the symmetrical half-bridge circuit generates fixed-width chopping voltage, the chopping voltage is connected with a resonant tank circuit formed by connecting a resonant capacitor, a resonant inductor and a high-frequency transformer in series primarily, and the frequency of the resonant tank circuit, the chopping voltage and secondary synchronous rectification is matched under the control of the sine conversion controller, so that the voltage gain of the conversion circuit under different load conditions is kept constant, and the function of symmetrical half-bridge series resonance sine power conversion is realized.
The steps in the present application may be sequentially adjusted, combined, and subtracted according to actual requirements.
The units in the device can be merged, divided and deleted according to actual requirements.
Although the present application has been disclosed in detail with reference to the accompanying drawings, it is to be understood that such description is merely illustrative and not restrictive of the application of the present application. The scope of the present application is defined by the appended claims and may include various modifications, adaptations, and equivalents of the invention without departing from the scope and spirit of the application.
Claims (10)
1. A driving method of a symmetrical half-bridge LC series resonance sine power conversion circuit, which is suitable for a symmetrical half-bridge sine power conversion circuit, the symmetrical half-bridge sine power conversion circuit comprises a symmetrical half-bridge circuit, a high-frequency transformer (5) and a rectifying circuit, and is characterized by comprising the following steps:
step S1, an LC series resonance circuit is connected in series between the primary end of the high-frequency transformer (5) and the symmetrical half-bridge circuit;
step S2, determining the switching frequency of the symmetrical half-bridge sine power conversion circuit according to the resonance angular frequency of the LC series resonance circuit;
and step S3, sending a transistor turn-on instruction to the symmetrical half-bridge sinusoidal power conversion circuit according to the switching frequency, wherein the transistor turn-on instruction is used for controlling the transistors in the symmetrical half-bridge sinusoidal power conversion circuit to be turned on or off.
2. The driving method of symmetrical half-bridge LC series-resonant sinusoidal power conversion circuit according to claim 1, wherein two half-bridge transistors are connected to the control terminal of the symmetrical half-bridge circuit, and four full-bridge synchronous rectification transistors are provided to the control terminal of the rectification circuit, wherein the transistor turn-on command is sent to the control terminal of the symmetrical half-bridge circuit and the control terminal of the rectification circuit by a sinusoidal conversion control circuit (15) having two output terminals, respectively,
the first output end of the sine conversion control circuit (15) is provided with two grid voltage division driving circuits which are sequentially connected with the grid of the first half-bridge transistor (1) and the grid of the second half-bridge transistor (2) at the control end of the symmetrical half-bridge circuit,
and a second output end of the sine conversion control circuit (15) is provided with four grid voltage division driving circuits which are sequentially connected with the four grids of the full-bridge synchronous rectification transistor.
3. The method of driving a symmetric half-bridge LC series resonant sinusoidal power conversion circuit of claim 2, wherein the transistor turn-on command comprises: a first drive voltage signal and a second drive voltage signal;
the first drive voltage signal is sent to the gate of the first half-bridge transistor (1), the gate of the first full-bridge synchronous rectification transistor (10) and the gate of the fourth full-bridge synchronous rectification transistor (13);
the second drive voltage signal is sent to the gate of the second half-bridge transistor (2), the gate of a second full-bridge synchronous rectification transistor (11) and the gate of a third full-bridge synchronous rectification transistor (12), wherein,
the phases of the first driving voltage signal and the second driving voltage signal are staggered.
4. The driving method of a symmetric half-bridge LC series resonant sinusoidal power conversion circuit according to claim 2, wherein the sinusoidal conversion control circuit (15) comprises a high frequency pulse width controller, a high frequency gate driver and an isolation transformer connected in sequence, the isolation transformer being connected to the first output terminal and the second output terminal, wherein six coils are provided at the secondary terminal of the isolation transformer,
a first coil (32) and a second coil (33) are connected to the first output terminal, a third coil (34), a fourth coil (35), a fifth coil (36) and a sixth coil (37) are connected to the second output terminal,
the first coil (32), the third coil (34) and the fifth coil (36) are first dotted terminals, the second coil (33), the fourth coil (35) and the sixth coil (37) are second dotted terminals, and the first dotted terminals and the second dotted terminals are staggered in phase.
5. The method of claim 4, wherein a gate voltage divider driving circuit is disposed between each coil of the secondary side of the isolation transformer and the first output terminal and the second output terminal, the gate voltage divider driving circuit comprising:
four high frequency diodes, a transient suppression diode (48) and three gate drive circuit resistors, wherein,
the cathode of the first high-frequency diode (42) is connected with the anode of the second high-frequency diode (44) and then connected with the positive end of the coil, and the anode of the first high-frequency diode (42) is connected with one end of a grid drive circuit resistor (43);
after the second high-frequency diode (44), the third high-frequency diode (45) and the fourth high-frequency diode (46) are connected in series in the same phase, the cathode of the fourth high-frequency diode (46) is connected to one end of a second gate drive circuit resistor (47), and the other end of the second gate drive circuit resistor (47) is connected to the other end of the gate drive circuit resistor (43) and connected to the gate of the transistor (410);
after the transient suppression diode (48) and the third gate drive circuit resistor (49) are connected in parallel, the cathode of the transient suppression diode (48) is connected to the other end of the second gate drive circuit resistor (47), and the anode of the transient suppression diode (48) is connected to the negative terminal of the coil and to the source of the transistor (410).
6. A symmetric half-bridge LC series resonant sinusoidal power conversion circuit, comprising: the circuit comprises a symmetrical half-bridge circuit, an LC series resonance circuit, a high-frequency transformer (5), a rectifying circuit and a sine conversion control circuit (15);
the LC series resonance circuit is connected between two output ends of the symmetrical half-bridge circuit after being connected with the primary end of the high-frequency transformer (5) in series, and the secondary end of the high-frequency transformer (5) is connected with the input end of the rectifying circuit;
the first output end of the sine conversion control circuit (15) is connected to the control end of the symmetrical half-bridge circuit, the second output end of the sine conversion control circuit (15) is connected to the control end of the rectifying circuit, and the sine conversion control circuit (15) is used for sending a conduction instruction to the symmetrical half-bridge circuit and the rectifying circuit.
7. The symmetric half-bridge LC series-resonant sinusoidal power conversion circuit of claim 6, the two outputs of the symmetric half-bridge circuit comprising a first output and a second output, the symmetric half-bridge circuit comprising in particular: the circuit comprises two half-bridge transistors, two half-bridge voltage-sharing capacitors and two half-bridge voltage-sharing resistors;
the half-bridge transistors are field effect transistors, the source electrode of the first half-bridge transistor (1) is connected in series with the drain electrode of the second half-bridge transistor (2) and is connected to the first output end of the symmetrical half-bridge circuit, and the drain electrode of the first half-bridge transistor (1) and the source electrode of the second half-bridge transistor (2) are respectively connected to the positive input end and the negative input end of the symmetrical half-bridge circuit;
the two half-bridge voltage-sharing capacitors are connected in series after being connected in parallel with one half-bridge voltage-sharing resistor respectively, and the second output end of the symmetrical half-bridge circuit is connected between the two half-bridge voltage-sharing capacitors which are connected in series.
8. A symmetric half-bridge LC series-resonant sinusoidal power conversion circuit according to claim 7, characterized in that the LC series-resonant circuit comprises a resonant capacitor (3) and a resonant inductor (4) in series;
the resonant capacitor (3) is connected to the first output end of the symmetrical half-bridge circuit, the resonant inductor (4) is connected to a first port of the primary end of the high-frequency transformer (5), and the resonant capacitor (3), the resonant inductor (4) and the primary end of the high-frequency transformer (5) are connected in series to form a series resonant tank circuit;
a second port of the primary side of the high frequency transformer (5) is connected to the second output of the symmetric half bridge circuit.
9. The symmetric half-bridge LC series resonant sinusoidal power conversion circuit of claim 7, wherein the rectification circuit comprises: four full-bridge synchronous rectifier transistors and a filter capacitor (14);
the four full-bridge synchronous rectifier transistors are field effect transistors, and form a bridge rectifier circuit, wherein a first bridge circuit of the bridge rectifier circuit is formed by a first full-bridge synchronous rectifier transistor (10) and a second full-bridge synchronous rectifier transistor (11), and a second bridge circuit of the bridge rectifier circuit is formed by a third full-bridge synchronous rectifier transistor (12) and a fourth full-bridge synchronous rectifier transistor (13);
the filter capacitor (14) is connected in parallel to two ends of the bridge rectifier circuit, and the filter capacitor (14) is arranged at the output end of the rectifier circuit.
10. The symmetric half-bridge LC series-resonant sinusoidal power conversion circuit of claim 9,
the first output end of the sine conversion control circuit (15) is provided with two grid voltage division driving circuits which are sequentially connected with the grid of the first half-bridge transistor (1) and the grid of the second half-bridge transistor (2);
the second output end of the sine conversion control circuit (15) is provided with four grid voltage division driving circuits which are sequentially connected with the four grids of the full-bridge synchronous rectification transistor.
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