CN112038886B - VCSEL laser and manufacturing method thereof - Google Patents
VCSEL laser and manufacturing method thereof Download PDFInfo
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- CN112038886B CN112038886B CN202010992653.8A CN202010992653A CN112038886B CN 112038886 B CN112038886 B CN 112038886B CN 202010992653 A CN202010992653 A CN 202010992653A CN 112038886 B CN112038886 B CN 112038886B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 56
- 239000002184 metal Substances 0.000 claims abstract description 56
- 239000002052 molecular layer Substances 0.000 claims abstract description 56
- 230000000694 effects Effects 0.000 claims abstract description 20
- 230000000737 periodic effect Effects 0.000 claims abstract description 13
- 239000004038 photonic crystal Substances 0.000 claims abstract description 13
- 239000002082 metal nanoparticle Substances 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 7
- 239000002114 nanocomposite Substances 0.000 claims description 6
- 239000000084 colloidal system Substances 0.000 claims description 5
- 238000004070 electrodeposition Methods 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 238000004049 embossing Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention provides a VCSEL laser and a manufacturing method thereof, wherein a metal nano layer is constructed on the surface of a light-emitting structure, so that a plasmon resonance effect is formed on the surface of the light-emitting structure, and a topological two-dimensional photonic crystal is constructed; when electrons and holes are injected into the laser and are limited to be compositely emitted in the active layer, the generated evanescent wave is coupled to the resonant cavity of the laser and forms effective feedback; meanwhile, the surface plasmon resonance effect formed by the periodic structure of the metal nano layer is matched with the topological two-dimensional photonic crystal formed by the periodic structure of the metal nano layer, so that boundary reflection caused by the metal nano layer only occurs near the center of the Brillouin zone, the number of laser resonant cavity modes capable of obtaining effective feedback is limited, the modes limited by an effective light field are concentrated near the center of the Brillouin zone, and the modes have very large momentum components in the direction perpendicular to the metal nano layer, so that the modes are coupled with the light field in the laser to realize vertical light emission.
Description
Technical Field
The invention relates to the technical field of VCSELs, in particular to a VCSEL laser and a manufacturing method thereof.
Background
VCSEL (vertical cavity Surface emitting Laser) (VERTICAL CAVITY Surface EMITTING LASER) is developed based on gallium arsenide semiconductor materials, is different from other light sources such as LEDs (light emitting diodes) and LDs (Laser Diode), has the advantages of small volume, round output light spots, single longitudinal mode output, small threshold current, low price, easy integration into a large-area array and the like, and is widely applied to the fields of optical communication, optical interconnection, optical storage and the like.
At present, the VCSEL laser output power is not high, the divergence angle is large, and as injected carriers are partially combined with emitted photons, non-radiative combined loss can occur in the rest, so that the conversion efficiency of the laser is limited; on the other hand, the cavity has multiple modes at the same time, wherein the generation of high-order modes can increase the divergence of the light beam, increase the divergence angle and reduce the brightness of the laser. The above-described method of limiting the divergence angle is mostly a modification of the optical resonator portion between the P-type DBR and the N-type DBR. For example, 1, adjusting the size of the oxidized aperture can improve the divergence angle, but too large oxidized aperture can result in a decrease in injection current density, a decrease in conversion efficiency, and a decrease in brightness; if the oxidized aperture is too small, the threshold voltage becomes large. 2. Adjusting SCH can also improve divergence angle, but this can lead to poor current spreading, which can lead to poor device thermal performance, increased non-radiative recombination, and reduced conversion efficiency.
In order to increase the single-tube output power of a laser, it is generally necessary to increase the cross-sectional area (i.e., the exit area) of a laser beam exiting from an element. When the emergent area is increased to a certain extent, the high-order oscillation mode starts to obtain gain to form multimode lasing, so that the problems of reduced brightness, unstable mode and the like of the laser are caused.
In view of this, the present inventors have specifically devised a VCSEL laser and a method for fabricating the same, and have generated the same.
Disclosure of Invention
The invention aims to provide a VCSEL laser and a manufacturing method thereof, which are used for solving the problems of small output power and large divergence angle of the VCSEL laser.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
a VCSEL laser, comprising:
A substrate;
the light-emitting structure is arranged on the surface of the substrate; the light emitting structure at least comprises an N-type DBR layer, an N-type waveguide limiting layer, a quantum well, a P-type waveguide limiting layer, a P-type oxidation interface cut-off layer, a metal nano layer and a P-type DBR layer which are sequentially stacked along a first direction; the free vibration frequency of the metal nano layer is matched with the incident light photon frequency of the light-emitting structure, so that a plasmon resonance effect is formed on the surface of the light-emitting structure, and a topological two-dimensional photonic crystal is formed; the first direction is perpendicular to the substrate and is directed to the light emitting structure by the substrate;
and the ohmic contact layer is laminated on one side surface of the P-type DBR layer, which is away from the metal nano layer.
Optionally, the free vibration frequency of the metal nano layer is greater than or equal to the photon frequency of the incident light of the light-emitting structure, and electrons of the metal nano layer are induced to resonate, so that a plasmon resonance (LSPR) effect is formed on the surface of the light-emitting structure.
Preferably, the metal nano layer comprises a plurality of metal nano particles formed by disperse embossing, or comprises a nano composite layer formed by a transparent medium layer and a plurality of metal nano particles dispersed in the transparent medium layer.
Preferably, the size of each metal nanoparticle is uniform, and one or more metal nanoparticles form a periodic unit, and the period number is λ/b, where λ is a light source wavelength of the VCSEL chip, and b is an effective refractive index of the metal nanolayer.
Preferably, the metal nanoparticles comprise at least one of Ag, au, pt, pd, cu, al.
Preferably, the metal nanoparticles are circular or elliptical or polygonal.
Preferably, the ratio of the sum of the projection areas of all the metal nanoparticles on the substrate to the projection area of the light-emitting structure on the substrate is 20% -60%.
Preferably, the P-type DBR layer and/or the N-type DBR layer includes a plurality of sub-DBR layers having different refractive indexes; and the thicknesses of the P-type DBR layer and the N-type DBR layer are lambda/4, wherein lambda is the light source wavelength of the VCSEL chip.
The invention also provides a manufacturing method of the VCSEL, which comprises the following steps:
Step A01, providing a substrate;
a02, an N-type DBR layer, an N-type waveguide limiting layer, a quantum well, a P-type waveguide limiting layer and a P-type oxidation interface cut-off layer are sequentially grown on the substrate to form an epitaxial layer;
a03, growing a metal nano layer on the surface of the P-type oxidation interface cut-off layer, wherein the free vibration frequency of the metal nano layer is matched with the incident light photon frequency of the light-emitting structure, so that a plasmon resonance effect is formed on the surface of the light-emitting structure, and a topological two-dimensional photonic crystal is formed;
step A04, depositing a P-type DBR layer on the surface of the metal nano layer;
And A05, evaporating to form an ohmic contact layer, wherein the ohmic contact layer is laminated on the surface of the P-type DBR layer.
Preferably, the step a03 includes forming a plurality of dispersed metal nanoparticles or forming a nanocomposite layer comprising a transparent dielectric layer and a plurality of metal nanoparticles dispersed in the transparent dielectric layer by magnetron sputtering or electrochemical deposition or colloid spin coating or nanoimprint process after the surface mask of the epitaxial layer.
Preferably, the size of each metal nanoparticle is uniform, and one or more metal nanoparticles form a periodic unit, and the period number is λ/b, where λ is a light source wavelength of the VCSEL chip, and b is an effective refractive index of the metal nanolayer.
Preferably, the ratio of the sum of the projection areas of the metal nano particles on the substrate to the projection area of the light-emitting structure on the substrate is 20% -60%.
According to the technical scheme, the VCSEL laser provided by the invention has the advantages that the metal nano layer is constructed on the surface of the light-emitting structure, the free vibration frequency of the metal nano layer is matched with the photon frequency of incident light of the light-emitting structure, so that the surface of the light-emitting structure forms a plasmon resonance effect, and a topological two-dimensional photonic crystal is constructed; on the one hand, a plasmon resonance effect is formed on the surface of the light-emitting structure, so that the service life of carriers can be prolonged, and the carriers can be compounded in the quantum well as much as possible; on the other hand, when electrons and holes are injected into the laser and are limited to compound luminescence in the active layer, the generated evanescent wave is coupled to the resonant cavity of the laser and forms effective feedback; meanwhile, the surface plasmon resonance effect formed by the periodic structure of the metal nano layer is matched with the topological two-dimensional photonic crystal formed by the periodic structure of the metal nano layer, so that boundary reflection caused by the metal nano layer only occurs near the center of the Brillouin zone, the number of laser resonant cavity modes capable of obtaining effective feedback is limited, the modes limited by an effective light field are concentrated near the center of the Brillouin zone, and the modes have very large momentum components in the direction perpendicular to the metal nano layer, so that the modes are coupled with the light field in the laser to realize vertical light emission;
Further, by: the metal nanoparticles are distributed periodically, the size of each metal nanoparticle is uniform, one or more metal nanoparticles form a periodic unit, the period number is lambda/b, lambda is the light source wavelength of the VCSEL chip, and b is the effective refractive index of the metal nano layer; and enabling the metal nano layer to form a plasmon resonance effect on the surface of the light-emitting structure, and constructing and forming the topological two-dimensional photonic crystal. Therefore, the metal nano particles form energy band structures of dipole modes and quadrupole modes, and the light field mode is limited; meanwhile, the effective refractive index of the metal material of the metal nano particles is lower than that of the surrounding other material layers, and the optical field in the resonant cavity can be further limited, so that the divergence angle is reduced.
Then, through the setting that the ratio of the projection area of the metal nano layer on the substrate to the projection area of the light-emitting structure on the substrate is 20% -60%, the light-emitting area of the light-emitting structure can be better met, meanwhile, the plasmon resonance (LSPR) effect formed on the local surface of the light-emitting structure can be better exerted, and the light-emitting rate of the VCSEL is further ensured.
Finally, by setting up: the P-type DBR layer and/or the N-type DBR layer comprises a plurality of sub-DBR layers having different refractive indexes; and the thicknesses of the P-type DBR layer and the N-type DBR layer are lambda/4, wherein lambda is the light source wavelength of the VCSEL chip. The electric field intensity of light propagating in the N-type waveguide limiting layer and the P-type waveguide limiting layer can be better limited while the reflectivity of the DBR is not influenced.
According to the technical scheme, the manufacturing method of the VCSEL provided by the invention has the beneficial effects that the optimal metal nano layer is obtained by forming a plurality of metal nano particles through magnetron sputtering or electrochemical deposition or colloid spin coating or nano imprinting process after the surface of the epitaxial layer is masked; meanwhile, the process is simple and convenient to manufacture, and is convenient for production.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a VCSEL laser according to an embodiment of the present invention;
Fig. 2 is a schematic diagram of an arrangement structure of metal nanoparticles of a VCSEL laser according to an embodiment of the present invention;
fig. 3 is a schematic diagram of another arrangement structure of metal nanoparticles of a VCSEL laser according to an embodiment of the present invention;
fig. 4 is a schematic flow chart of a method for fabricating a VCSEL laser according to an embodiment of the present invention;
the symbols in the drawings illustrate: 1. the semiconductor device comprises a substrate, 2, a buffer layer, 3, an N-type DBR layer, 31, a sub-N-type DBR layer, 4, an N-type waveguide limiting layer, 5, a quantum well, 6, a P-type waveguide limiting layer, 7, a P-type oxidation interface cut-off layer, 8, a metal nano layer, 81, metal nano particles, 9, a P-type DBR layer, 91, a sub-P-type DBR layer, 10 and an ohmic contact layer.
Detailed Description
In order to make the contents of the present invention more clear, the contents of the present invention will be further described with reference to the accompanying drawings. The present invention is not limited to this specific embodiment. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, a VCSEL laser includes:
A substrate 1;
A light emitting structure provided on the surface of the substrate 1; the light emitting structure at least comprises an N-type DBR layer 3, an N-type waveguide limiting layer 4, a quantum well 5, a P-type waveguide limiting layer 6, a P-type oxidation interface cut-off layer 7, a metal nano layer 8 and a P-type DBR layer 9 which are sequentially stacked along a first direction; the free vibration frequency of the metal nano layer 8 is matched with the incident light photon frequency of the light-emitting structure, so that a plasmon resonance effect is formed on the surface of the light-emitting structure, and a topological two-dimensional photonic crystal is constructed; the first direction is perpendicular to the substrate 1 and is directed by the substrate 1 towards the light emitting structure;
an ohmic contact layer 10, the ohmic contact layer 10 is laminated on a side surface of the P-type DBR layer 9 facing away from the metal nano layer 8.
Alternatively, in one embodiment of the present application, the free vibration frequency of the metal nano-layer 8 is greater than or equal to the photon frequency of the incident light of the light emitting structure, and electrons of the metal nano-layer 8 are induced to resonate, so that a plasmon resonance (LSPR) effect is formed on the surface of the light emitting structure.
On the basis of the above technical solution, in other embodiments of the present application, the N-type waveguide confinement layer 4 and the P-type waveguide confinement layer 6 may include a plurality of sub confinement layers, so long as the foregoing ranges and requirements are satisfied, and the present application is not limited to the above embodiments.
It should be noted that the material types of the substrate 1, the N-type DBR layer 3, the N-type waveguide confinement layer 4, the quantum well 5, the P-type waveguide confinement layer 6, the P-type oxide interface cut-off layer 7, and the P-type DBR layer 9 may be unlimited in this embodiment; for example, but not limited to, an aluminum gallium arsenide material system. As long as the matching of the free vibration frequency of the nano system and the incident light photon frequency of the luminous structure A is satisfied.
In other embodiments of the present application, a buffer layer 2 is provided between the substrate 1 and the N-type DBR layer 3.
Further, the metal nano layer 8 includes a plurality of metal nano particles 81 formed by dispersing and embossing, or includes a nano composite layer formed by a transparent medium layer and a plurality of metal nano particles dispersed in the transparent medium layer.
Alternatively, in one embodiment of the present application, as shown in fig. 2 and 3, each of the metal nanoparticles 81 has a uniform size, and one or more metal nanoparticles form a periodic unit, where the number of periods is λ/b, where λ is a wavelength of a light source of the VCSEL chip, and b is an effective refractive index of the metal nanolayer.
Optionally, in one embodiment of the application, the metal nanoparticles comprise at least one of Ag, au, pt, pd, cu, al.
Alternatively, in one embodiment of the present application, as shown in fig. 2 and 3, the metal nanoparticles have a circular shape, an elliptical shape, or a polygonal shape.
Alternatively, in one embodiment of the present application, the ratio of the sum of the projected areas of all the metal nanoparticles on the substrate 1 to the projected area of the light emitting structure on the substrate 1 ranges from 20% to 60%.
Alternatively, in one embodiment of the present application, the P-type DBR layer 9 and/or the N-type DBR layer 3 includes several sub DBR layers having different refractive indexes; and, the thicknesses of the P-type DBR layer 9 and the N-type DBR layer 3 are λ/4, where λ is the light source wavelength of the VCSEL chip.
It should be noted that, the number of the sub DBR layers is not limited, and may be 1 or a plurality of sub DBR layers; the present application is not intended to be exhaustive so long as the foregoing ranges and requirements are met and adaptation is made with reference to the embodiments described.
The embodiment of the invention also provides a manufacturing method of the VCSEL, as shown in FIG. 4, the manufacturing method of the VCSEL comprises the following steps:
step A01, providing a substrate 1;
A02, an N-type DBR layer 3, an N-type waveguide limiting layer 4, a quantum well 5, a P-type waveguide limiting layer 6 and a P-type oxidation interface cut-off layer 7 are sequentially grown on a substrate 1 to form an epitaxial layer;
step A03, growing a metal nano layer 8 on the surface of the P-type oxidation interface cut-off layer 7, wherein the free vibration frequency of the metal nano layer 8 is matched with the incident light photon frequency of the light-emitting structure, so that a plasmon resonance effect is formed on the surface of the light-emitting structure, and a topological two-dimensional photonic crystal is formed;
step A04, depositing a P-type DBR layer 9 on the surface of the metal nano layer 8;
In step a05, an ohmic contact layer 10 is formed by vapor deposition, and the ohmic contact layer 10 is laminated on the surface of the P-type DBR layer 9.
Optionally, in an embodiment of the present application, the step a03 includes forming a plurality of dispersed metal nanoparticles by magnetron sputtering or electrochemical deposition or colloid spin coating or nanoimprint process after the surface mask of the epitaxial layer, or forming a nanocomposite layer composed of a transparent dielectric layer and a plurality of metal nanoparticles dispersed in the transparent dielectric layer. .
Alternatively, in one embodiment of the present application, the ratio of the sum of the projection areas of the metal nanoparticles on the substrate 1 to the projection area of the light emitting structure on the substrate 1 ranges from 20% to 60%.
According to the technical scheme, the metal nano layer 8 is constructed on the surface of the light-emitting structure, and the free vibration frequency of the metal nano layer 8 is matched with the photon frequency of incident light of the light-emitting structure, so that a plasmon resonance effect is formed on the surface of the light-emitting structure, and the selection of dipole moment corresponding to the photon frequency is realized by controlling the electron transition rate of the VCSEL; on the one hand, a plasmon resonance effect is formed on the surface of the light-emitting structure, so that the service life of carriers can be prolonged, and the carriers can be compounded in the quantum well 5 as much as possible; on the other hand, when electrons and holes are injected into the laser and are limited to compound luminescence in the active layer, the generated evanescent wave is coupled to the resonant cavity of the laser and forms effective feedback; meanwhile, the surface plasmon resonance effect formed by the periodic structure of the metal nano layer is matched with the topological two-dimensional photonic crystal formed by the periodic structure of the metal nano layer, so that boundary reflection caused by the metal nano layer only occurs near the center of the Brillouin zone, the number of laser resonant cavity modes capable of obtaining effective feedback is limited, the modes limited by an effective light field are concentrated near the center of the Brillouin zone, and the modes have very large momentum components in the direction perpendicular to the metal nano layer, so that the modes are coupled with the light field in the laser to realize vertical light emission.
Further, by: the metal nanoparticles are distributed periodically, the size of each metal nanoparticle is uniform, one or more metal nanoparticles form a periodic unit, the period number is lambda/b, lambda is the light source wavelength of the VCSEL chip, and b is the effective refractive index of the metal nano layer; and enabling the metal nano layer to form a plasmon resonance effect on the surface of the light-emitting structure, and constructing and forming the topological two-dimensional photonic crystal. Therefore, the metal nano particles form energy band structures of dipole modes and quadrupole modes, and the light field mode is limited; meanwhile, the effective refractive index of the metal material of the metal nano particles is lower than that of the surrounding other material layers, and the optical field in the resonant cavity can be further limited, so that the divergence angle is reduced.
Then, through the setting that the ratio of the projection area of the metal nano layer 8 on the substrate 1 to the projection area of the light-emitting structure on the substrate 1 is 20% -60%, the light-emitting area of the light-emitting structure can be better met, meanwhile, the plasmon resonance (LSPR) effect formed on the local surface of the light-emitting structure can be better exerted, and the light-emitting rate of the VCSEL is further ensured.
Finally, by setting up: the P-type DBR layer 9 and/or the N-type DBR layer 3 includes several sub-DBR layers having different refractive indexes; and, the thicknesses of the P-type DBR layer 9 and the N-type DBR layer 3 are λ/4, where λ is the light source wavelength of the VCSEL chip. The electric field intensity of light propagating in the N-type waveguide confinement layer 4 and the P-type waveguide confinement layer 6 can be better limited while the reflectivity of the DBR is not affected.
According to the technical scheme, the manufacturing method of the VCSEL provided by the invention has the beneficial effects that the optimal metal nano layer 8 is obtained by forming a plurality of metal nano particles through magnetron sputtering or electrochemical deposition or colloid spin coating or nano imprinting process after the surface of the epitaxial layer is masked; meanwhile, the process is simple and convenient to manufacture, and is convenient for production.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that an article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such article or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in an article or device comprising the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (7)
1.A VCSEL laser, comprising:
A substrate;
the light-emitting structure is arranged on the surface of the substrate; the light emitting structure at least comprises an N-type DBR layer, an N-type waveguide limiting layer, a quantum well, a P-type waveguide limiting layer, a P-type oxidation interface cut-off layer, a metal nano layer and a P-type DBR layer which are sequentially stacked along a first direction; the free vibration frequency of the metal nano layer is matched with the incident light photon frequency of the light-emitting structure, so that a plasmon resonance effect is formed on the surface of the light-emitting structure, and a topological two-dimensional photonic crystal is formed; the first direction is perpendicular to the substrate and is directed to the light emitting structure by the substrate;
The ohmic contact layer is laminated on one side surface of the P-type DBR layer, which is away from the metal nano layer;
the metal nano layer comprises a plurality of metal nano particles formed by disperse embossing, or a nano composite layer formed by a transparent medium layer and a plurality of metal nano particles dispersed in the transparent medium layer;
the P-type DBR layer and/or the N-type DBR layer comprises a plurality of sub-DBR layers with different refractive indexes; and the thicknesses of the P-type DBR layer and the N-type DBR layer are lambda/4, wherein lambda is the light source wavelength of the VCSEL chip.
2. The VCSEL laser in accordance with claim 1, wherein each of the metal nanoparticles is of uniform size and one or more of the metal nanoparticles form a periodic unit having a period of λ/b, where λ is a light source wavelength of the VCSEL chip and b is an effective refractive index of the metal nanolayer.
3. The VCSEL laser in accordance with claim 1, wherein the metal nanoparticles comprise at least one of Ag, au, pt, pd, cu, al.
4. The VCSEL laser in accordance with claim 1, wherein the metal nanoparticles are circular or elliptical or polygonal.
5. The VCSEL laser in accordance with claim 1, wherein the ratio of the sum of the projected areas of all the metal nanoparticles onto the substrate to the projected area of the light emitting structure onto the substrate is in the range of 20% -60%.
6. The manufacturing method of the VCSEL laser is characterized by comprising the following steps of:
Step A01, providing a substrate;
a02, an N-type DBR layer, an N-type waveguide limiting layer, a quantum well, a P-type waveguide limiting layer and a P-type oxidation interface cut-off layer are sequentially grown on the substrate to form an epitaxial layer;
A03, growing a metal nano layer on the surface of the P-type oxidation interface cut-off layer, wherein the free vibration frequency of the metal nano layer is matched with the incident light photon frequency of the epitaxial layer, so that a plasmon resonance effect is formed on the surface of the light-emitting structure, and a topological two-dimensional photonic crystal is constructed;
step A04, depositing a P-type DBR layer on the surface of the metal nano layer;
Step A05, forming an ohmic contact layer by vapor deposition, wherein the ohmic contact layer is laminated on the surface of the P-type DBR layer;
After the surface of the epitaxial layer is masked, a plurality of dispersed metal nano particles are formed through magnetron sputtering or electrochemical deposition or colloid spin coating or nanoimprint process, or a nano composite layer formed by a transparent medium layer and a plurality of metal nano particles dispersed in the transparent medium layer is formed;
the P-type DBR layer and/or the N-type DBR layer comprises a plurality of sub-DBR layers with different refractive indexes; and the thicknesses of the P-type DBR layer and the N-type DBR layer are lambda/4, wherein lambda is the light source wavelength of the VCSEL chip.
7. The method of claim 6, wherein each of the metal nanoparticles has a uniform size, and one or more of the metal nanoparticles form a periodic unit, the number of periods being λ/b, where λ is a light source wavelength of the VCSEL chip, and b is an effective refractive index of the metal nanolayer.
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