CN112038460B - Light emitting device, display substrate and display device - Google Patents
Light emitting device, display substrate and display device Download PDFInfo
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- CN112038460B CN112038460B CN202011045669.4A CN202011045669A CN112038460B CN 112038460 B CN112038460 B CN 112038460B CN 202011045669 A CN202011045669 A CN 202011045669A CN 112038460 B CN112038460 B CN 112038460B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H20/8162—Current-blocking structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/823—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO
- H10H20/8232—Materials of the light-emitting regions comprising only Group II-VI materials, e.g. ZnO characterised by the dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
- H10K50/165—Electron transporting layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- Nanotechnology (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides a light emitting device, a display substrate and a display apparatus, the light emitting device includes: the light-emitting layer is provided with an electron transmission material and quantum dots; the light-emitting device comprises a first electron transport layer and a hole transport layer, wherein the first electron transport layer, the light-emitting layer and the hole transport layer are sequentially stacked. In the light-emitting device, the electron transport material and the quantum dots are arranged in the light-emitting layer, holes can be blocked by the electron transport material in the light-emitting layer, enrichment of the holes in the light-emitting layer is avoided, carrier balance is facilitated, auger recombination of excitons in the quantum dots caused by redundant holes is reduced, and light-emitting efficiency is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a light emitting device, a display substrate and a display device.
Background
The Quantum Dot (QD) is used as a novel luminescent material, has the advantages of high light color purity, high luminous quantum efficiency, adjustable luminous color, long service life and the like, and becomes a research hot spot of the current novel LED luminescent material. In a quantum dot light emitting device, injected electrons are difficult to inject into a quantum dot layer, holes are enriched in the quantum dot layer, carrier balance is affected, meanwhile, fluorescence quantum efficiency of the quantum dot is reduced due to auger recombination, and finally light emitting efficiency of the device is affected.
Disclosure of Invention
In view of the above, the present invention provides a light emitting device, a display substrate and a display apparatus, which are used for solving the problems that holes are easy to be enriched in a quantum dot layer, carrier balance is affected, and light emitting efficiency of the device is affected.
In order to solve the technical problems, the invention adopts the following technical scheme:
in a first aspect, a light emitting device according to an embodiment of the present invention includes:
A light emitting layer having an electron transporting material and quantum dots therein;
the light-emitting device comprises a first electron transport layer and a hole transport layer, wherein the first electron transport layer, the light-emitting layer and the hole transport layer are sequentially stacked.
Wherein the quantum dots are dispersed in the electron transport material; or alternatively
The light emitting layer includes: a quantum dot layer and a second electron transport layer, the second electron transport layer being located between the quantum dot layer and the hole transport layer; or alternatively
The light emitting layer includes: the quantum dot layer and the second electron transport layer are alternately laminated.
The light-emitting layer comprises a quantum dot layer and a second electron transport layer, the quantum dot layer and the second electron transport layer are alternately stacked, and positions, close to the first electron transport layer and the hole transport layer, in the light-emitting layer are respectively the quantum dot layer.
The light-emitting layer comprises a quantum dot layer and a second electron transport layer, the quantum dot layer and the second electron transport layer are alternately stacked, and positions, close to the first electron transport layer and the hole transport layer, in the light-emitting layer are respectively the second electron transport layer.
Wherein the light emitting device further comprises:
and the first electron transport layer, the light emitting layer, the hole blocking layer and the hole transport layer are sequentially stacked.
Wherein the hole blocking layer is an electron transport material layer.
The thickness of the first electron transport layer is 50-300 nm, the thickness of the light-emitting layer is 20-50 nm, and the thickness of the hole blocking layer is 5-10 nm.
Wherein, still include:
the electron injection layer, the first electron transport layer, the light-emitting layer, the hole transport layer and the hole injection layer are sequentially stacked.
In a second aspect, a display substrate according to an embodiment of the present invention includes the light emitting device described in the above embodiment.
In a third aspect, a display device according to an embodiment of the present invention includes the display substrate described in the above embodiment.
The technical scheme of the invention has the following beneficial effects:
According to the light-emitting device provided by the embodiment of the invention, the electron transport material and the quantum dots are arranged in the light-emitting layer, the first electron transport layer, the light-emitting layer and the hole transport layer are sequentially stacked, the electron transport material and the quantum dots are arranged in the light-emitting layer, holes can be blocked through the electron transport material, enrichment of holes in the light-emitting layer is avoided, carrier balance is facilitated, auger recombination of excitons in the quantum dots caused by redundant holes is reduced, and light-emitting efficiency is improved.
Drawings
Fig. 1 is a schematic view of a light emitting device according to an embodiment of the present invention;
fig. 2 is another schematic structural view of a light emitting device according to an embodiment of the present invention;
fig. 3 is a schematic view of a light emitting device according to another embodiment of the present invention;
fig. 4 is a schematic view showing still another structure of a light emitting device according to an embodiment of the present invention;
fig. 5 is a schematic structural view of a light emitting layer in a light emitting device according to an embodiment of the present invention;
Fig. 6 is another schematic structural view of a light emitting layer in a light emitting device according to an embodiment of the present invention;
fig. 7 is a schematic view showing still another structure of a light emitting layer in a light emitting device according to an embodiment of the present invention;
fig. 8 is a schematic view of still another structure of a light emitting device according to an embodiment of the present invention;
fig. 9 is a schematic view showing still another structure of a light emitting device according to an embodiment of the present invention;
Fig. 10 is a schematic view of still another structure of a light emitting device according to an embodiment of the present invention;
fig. 11 is a schematic view of still another structure of a light emitting device according to an embodiment of the present invention.
Reference numerals
A light emitting layer 10; a quantum dot layer 11; a second electron transport layer 12;
A first electron transport layer 20;
a hole transport layer 30;
A hole blocking layer 40;
An electron injection layer 50;
A hole injection layer 60;
a first electrode 71 and a second electrode 72.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which are obtained by a person skilled in the art based on the described embodiments of the invention, fall within the scope of protection of the invention.
A light emitting device according to an embodiment of the present invention is described in detail below.
As shown in fig. 1 to 7, a light emitting device according to an embodiment of the present invention includes: the light-emitting layer 10, the first electron transport layer 20 and the hole transport layer 30 are stacked in this order, and the light-emitting layer 10 has an electron transport material and quantum dots, and the first electron transport layer 20, the light-emitting layer 10 and the hole transport layer 30 are stacked in this order. The luminescent layer 10 may be a luminescent layer film formed by uniformly mixing quantum dots and electron transport materials or other main materials with hole blocking effect according to a certain proportion and then depositing by spin coating; the first electron transport layer 20 may be a ZnO film doped with ZnO or Mg, al, zr, Y, etc., and the first electron transport layer 20 may deposit an n-type semiconductor film of ZnO, etc. by sputtering; the surface of the first electron transport layer 20 may be roughened by plasma etching or sand blasting, so as to increase the contact between the quantum dots and the electron transport layer, and avoid electric leakage caused by direct contact between the ZnO portion and the hole transport layer due to small contact area caused by the accumulation of the quantum dots in nanoparticle state on the smooth ZnO surface.
In the light emitting device of the present invention, the light emitting layer 10 has the electron transport material and the quantum dots, and holes can be blocked by the electron transport material, so that the enrichment of holes in the light emitting layer is avoided, carrier balance is facilitated, auger recombination of excitons in the quantum dots due to redundant holes is reduced, and light emitting efficiency is improved.
In some embodiments of the present invention, as shown in fig. 5, the light emitting layer 10 has an electron transporting material and quantum dots therein, the quantum dots are dispersed in the electron transporting material, and may be uniformly dispersed in the electron transporting material, and the distance between the quantum dots may be increased by dispersing the quantum dots through the electron transporting material. The light emitting layer 10 may have a host material and quantum dots therein, the quantum dots may be dispersed in the host material, the distance between the quantum dots may be increased, and the host material may be selected to have a hole blocking effect, thereby facilitating the balance of carriers.
In some embodiments, as shown in fig. 4, the light emitting layer 10 includes: the quantum dot layer 11 and the second electron transport layer 12, the second electron transport layer 12 is located between the quantum dot layer 11 and the hole transport layer 30, the second electron transport layer 12 is formed by using an electron transport material, holes can be blocked by arranging the second electron transport layer 12 in the light emitting layer 10, the enrichment of holes in the light emitting layer is avoided, and carrier balance is facilitated; or alternatively
The light emitting layer 10 includes: the quantum dot layer 11 and the second electron transport layer 12, the light emitting layer 10 may include at least one quantum dot layer 11 and at least two second electron transport layers 12, for example, the light emitting layer 10 may include one quantum dot layer 11 and two second electron transport layers 12, as shown in fig. 8, the quantum dot layer 11 is located between the two second electron transport layers 12, and holes can be blocked from being enriched in the quantum dot layer 11 by the second electron transport layers 12, so as to facilitate carrier balance, and meanwhile, excitons in the quantum dot layer 11 may be bound between the two second electron transport layers 12, so as to inhibit diffusion of excitons to two sides; or the light-emitting layer 10 may include at least two quantum dot layers 11 and at least one second electron transport layer 12, for example, as shown in fig. 9, the light-emitting layer may include two quantum dot layers 11 and one second electron transport layer 12, where the second electron transport layer 12 is disposed between the two quantum dot layers 11, and the two quantum dot layers 11 are separated by the second electron transport layer 12, and since the second electron transport layer 12 can block holes, holes are not easily enriched in the quantum dot layer 11 far from the hole transport layer 30 in the two quantum dot layers 11, which is beneficial to carrier balance of the quantum dot layers 11; for example, the quantum dot layer 11 and the second electron transport layer 12 may have multiple layers, respectively, and the specific number of layers may be reasonably selected according to needs, and the quantum dot layer 11 and the second electron transport layer 12 may be alternately stacked. The second electron transport layer 12 is formed by using an electron transport material, and by alternately arranging the quantum dot layers 11 and the second electron transport layer 12 in the light emitting layer 10, the distance between the quantum dots can be increased, which is favorable for balancing carriers, and the specific number of layers of the quantum dot layers 11 and the second electron transport layer 12 can be reasonably selected according to the needs. The first electron transport layer 20 and the second electron transport layer 12 may be formed using electron transport materials, and the materials of the first electron transport layer 20 and the second electron transport layer 12 may be the same or different.
In an embodiment of the present invention, as shown in fig. 6 and 7, the light emitting layer 10 may include a quantum dot layer 11 and a second electron transport layer 12, and the quantum dot layer 11 may have red, green and blue quantum dots therein, and the quantum dot layer 11 is stacked with the second electron transport layer 12. The quantum dot layer 11 and the second electron transport layer 12 may have multiple layers, and the quantum dot layer 11 and the second electron transport layer 12 may be alternately stacked, so that the distance between the quantum dots may be increased, which is favorable to balancing carriers, and the specific layer numbers of the quantum dot layer 11 and the second electron transport layer 12 may be reasonably selected according to needs. Alternatively, as shown in fig. 6, the light-emitting layer 10 includes a quantum dot layer 11 and a second electron transport layer 12, where the quantum dot layer 11 and the second electron transport layer 12 are alternately stacked, and positions, close to the first electron transport layer 20 and the hole transport layer 30, in the light-emitting layer 10 may be respectively the quantum dot layer 11, for example, as shown in fig. 10, the light-emitting layer includes three quantum dot layers 11 and two second electron transport layers 12, and the three quantum dot layers 11 and the two second electron transport layers 12 are alternately stacked, so that holes are not easily enriched in the two quantum dot layers 11 far from the hole transport layer 30 in the three quantum dot layers 11, which is favorable for carrier balance of the two quantum dot layers 11; or as shown in fig. 7, the light-emitting layer 10 includes a quantum dot layer 11 and a second electron transport layer 12, where the quantum dot layer 11 and the second electron transport layer 12 are alternately stacked, and the positions, close to the first electron transport layer 20 and the hole transport layer 30, in the light-emitting layer 10 are respectively the second electron transport layer 12, for example, as shown in fig. 11, the light-emitting layer includes two quantum dot layers 11 and three second electron transport layers 12, and the two quantum dot layers 11 and the three second electron transport layers 12 are alternately stacked, and each quantum dot layer 11 is located between two adjacent second electron transport layers 12, and holes can be blocked from being enriched in the quantum dot layers 11 by the second electron transport layers 12, so that carrier balance is facilitated; the quantum dot layers 11 are arranged to be different layers which are spaced apart, so that the distance between quantum dots in the different layers can be increased, and meanwhile, excitons in the quantum dot layers can be dispersed and bound between the two second electron transport layers 12, and the diffusion of the excitons to two sides can be restrained.
In some embodiments, as shown in fig. 1, the light emitting device further includes: the hole blocking layer 40, the first electron transport layer 20, the light emitting layer 10, the hole blocking layer 40, and the hole transport layer 30 are stacked in this order. Holes can be further effectively blocked by the hole blocking layer 40, so that the enrichment of holes in the light emitting layer is avoided, and carrier balance is facilitated. The hole blocking layer 40 may be a sputtered or spin-coated ZnO nanoparticle layer or a doped ZnMgO nanoparticle layer, or may be an evaporated organic small molecule material layer, where the hole blocking layer 40 may be about 5nm-10nm, and the HOMO level of the hole blocking layer 40 is deep, about 6.2-7.2eV, which may play a role in blocking holes, and is beneficial to carrier balance.
In the embodiment of the present invention, the hole blocking layer 40 may be an electron transport material layer, the material of the hole blocking layer 40 may be the same as or different from the material of the first electron transport layer 20 and the second electron transport layer 12, and the hole blocking layer 40, the first electron transport layer 20 and the second electron transport layer 12 may all be electron transport materials, for example, the hole blocking layer 40 and the first electron transport layer 20 may be ZnO materials, and the materials used for the second electron transport layer 12 and the hole blocking layer 40 may also be other host materials with a deep HOMO having a hole blocking effect, which may be specifically selected according to requirements.
In some embodiments, the first electron transport layer 20 may have a thickness of 50nm to 300nm, the light emitting layer 10 may have a thickness of 20nm to 50nm, the hole blocking layer 40 may have a thickness of 5nm to 10nm, and the specific thicknesses of the different layers may be selected as desired.
In an embodiment of the present invention, as shown in fig. 3, the light emitting device further includes an electron injection layer 50 and a hole injection layer 60, and the electron injection layer 50, the first electron transport layer 20, the light emitting layer 10, the hole transport layer 30, and the hole injection layer 60 are sequentially stacked. Meanwhile, the hole blocking layer 40, the electron injection layer 50, the first electron transport layer 20, the light emitting layer 10, the hole blocking layer 40, the hole transport layer 30, and the hole injection layer 60 may be sequentially stacked.
The light emitting device may further include a first electrode 71 and a second electrode 72, and the first electrode 71, the electron injection layer 50, the first electron transport layer 20, the light emitting layer 10, the hole blocking layer 40, the hole transport layer 30, the hole injection layer 60, and the second electrode 72 may be sequentially stacked, wherein the first electrode 71 may be a cathode, and the second electrode 72 may be an anode. The first electrode 71 may be disposed on a substrate, and the substrate may be glass or a flexible PET (Polyethylene terephthalate, polyester resin) base, and the first electrode 71 may be transparent ITO (indium tin oxide), FTO (fluorine doped SnO 2 conductive glass), a conductive polymer, or an opaque metal electrode such as Al, ag, or the like; the second electrode 72 may be metal Al, ag, or the like, or IZO may be deposited by magnetron sputtering, and the thickness of the second electrode 72 may be 10nm-100nm.
The preparation method of the light emitting device may be as follows:
depositing a first electrode 71 on a specific substrate, wherein the substrate can be glass or a flexible PET base, and the first electrode 71 can be transparent ITO, FTO or conductive polymer, or an opaque metal electrode such as Al, ag, or the like;
A ZnO or Mg, al, zr, Y doped ZnO thin film is deposited on the first electrode 71 as the first electron transport layer 20 by magnetron sputtering, and the thickness of each sub-pixel electron transport layer may be deposited as required, and the thickness may be between 50nm and 300 nm.
Sequentially depositing a light-emitting layer 10 with red, green and blue quantum dots on the first electron transport layer 20 by means of ink-jet printing and the like, wherein the thickness of the light-emitting layer can be 20-50 nm;
Preparing a ZnO layer on the light-emitting layer 10 by sputtering or spin coating, wherein the thickness of the ZnO layer is about 5nm to 10nm;
Sequentially depositing a hole transport layer 30 and a hole injection layer 60 on the ZnO layer by adopting an evaporation mode;
The second electrode 72 is formed, and the second electrode 72 may be made of metal Al, ag, or the like, or IZO may be deposited by magnetron sputtering, and the thickness thereof may be 10nm to 100nm, to finally obtain the light emitting device.
An embodiment of the present invention provides a display substrate, including a light emitting device as described in the above embodiment, where the display substrate having the light emitting device in the above embodiment is beneficial to carrier balance and improves light emitting efficiency.
An embodiment of the present invention provides a display device, including the display substrate described in the above embodiment, where the display device having the display substrate described in the above embodiment can improve light emitting efficiency and improve display effect.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The terms "first," "second," and the like, as used herein, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate a relative positional relationship, which changes accordingly when the absolute position of the object to be described changes.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that various modifications and adaptations can be made without departing from the principles of the present invention, and such modifications and adaptations are intended to be comprehended within the scope of the present invention.
Claims (8)
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| CN117356180A (en) * | 2022-04-29 | 2024-01-05 | 京东方科技集团股份有限公司 | Light emitting device, manufacturing method thereof, display substrate and display device |
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| CN110212102A (en) * | 2018-03-29 | 2019-09-06 | 京东方科技集团股份有限公司 | Light emitting diode with quantum dots, preparation method and display device |
| CN212257439U (en) * | 2020-09-28 | 2020-12-29 | 京东方科技集团股份有限公司 | Light-emitting device, display substrate and display device |
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| KR100696961B1 (en) * | 2005-08-22 | 2007-03-20 | 한양대학교 산학협력단 | Organic light emitting diode operating in yellow region and manufacturing method thereof |
| JP4459286B2 (en) * | 2008-08-08 | 2010-04-28 | 防衛省技術研究本部長 | Infrared detector |
| CN110880559A (en) * | 2019-11-29 | 2020-03-13 | 福州大学 | An AC-driven carbon quantum dot light-emitting device |
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| CN110212102A (en) * | 2018-03-29 | 2019-09-06 | 京东方科技集团股份有限公司 | Light emitting diode with quantum dots, preparation method and display device |
| CN212257439U (en) * | 2020-09-28 | 2020-12-29 | 京东方科技集团股份有限公司 | Light-emitting device, display substrate and display device |
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