CN111987169B - Transistor based on two-dimensional gallium oxide thin film and preparation method - Google Patents
Transistor based on two-dimensional gallium oxide thin film and preparation method Download PDFInfo
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 57
- 239000010408 film Substances 0.000 claims abstract description 50
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 17
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 238000000861 blow drying Methods 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 238000001704 evaporation Methods 0.000 claims abstract description 6
- 229920000642 polymer Polymers 0.000 claims abstract description 6
- 230000008020 evaporation Effects 0.000 claims abstract description 5
- 238000001259 photo etching Methods 0.000 claims abstract description 5
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 60
- 229910052681 coesite Inorganic materials 0.000 claims description 35
- 229910052906 cristobalite Inorganic materials 0.000 claims description 35
- 239000000377 silicon dioxide Substances 0.000 claims description 35
- 229910052682 stishovite Inorganic materials 0.000 claims description 35
- 229910052905 tridymite Inorganic materials 0.000 claims description 35
- 239000010453 quartz Substances 0.000 claims description 25
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 23
- 239000010431 corundum Substances 0.000 claims description 16
- 229910052593 corundum Inorganic materials 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 16
- 229910005543 GaSe Inorganic materials 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 10
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 230000001681 protective effect Effects 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
- -1 polydimethylsiloxane Polymers 0.000 claims description 5
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 2
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- 239000010931 gold Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical compound [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001258 titanium gold Inorganic materials 0.000 description 2
- 241001076939 Artines Species 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910005541 GaS2 Inorganic materials 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
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- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
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- Thin Film Transistor (AREA)
Abstract
The invention discloses a preparation method of a two-dimensional gallium oxide based thin film transistor, which mainly solves the problem of low performance of the existing gallium oxide electronic device. The implementation scheme is as follows: 1) carrying out pretreatment of cleaning and blow-drying on a substrate; 2) selecting two-dimensional layered materials with different surface areas, and preparing two-dimensional beta-Ga with controllable area and thickness in an oxidation stripping mode2O3A film, and transferring the film to the upper surface of the substrate as a channel layer by adopting a transfer polymer; 3) and preparing the metal source and drain electrodes by a mask evaporation or photoetching method. The invention is to beta-Ga2O3The thickness and the area of the film are accurately controlled, the transmission characteristic of a semiconductor/metal electrode interface and the performance of a device of the semiconductor/metal electrode interface are improved, and the film can be used for manufacturing a high-performance large-scale photoelectric integrated circuit.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and further relates to a gallium oxide thin film transistor which can be used for manufacturing large-scale high-performance photoelectric integrated circuits.
Background
Ga2O3The material is used as a third-generation wide bandgap semiconductor material, the bandgap width of the material is between 4.5 and 4.9eV, the material is second to diamond, and the material has ultrahigh breakdown field strength close to 8MV/cm, so that Ga2O3The method has wide application in the aspects of high-power and low-power consumption devices. In Ga2O3Of the five isomers, with beta-Ga2O3Most stable and most common, beta-Ga2O3High transparency in deep ultraviolet region, transmittance of more than 80%, natural advantages of preparing transparent conductive film, and beta-Ga2O3The material has wide application prospect in the fields of transparent conductive films, solar blind detectors and thin film transistors, and becomes one of the research hotspots in the current semiconductor field. However, realization of beta-Ga2O3The precondition for these applications is to obtain high quality beta-Ga2O3Thin films, and laboratory prepared beta-Ga2O3The material properties are much lower than expected. According to the previous researches, the dimension reduction of the semiconductor can regulate and control the position of the energy level of the semiconductor, regulate and control the band gap, reduce the effective mass and simultaneously regulate the structure and the performance of a semiconductor/electrode metal interface. Up to now, in the preparation of low dimensional beta-Ga2O3In terms of thin films, chemical vapor deposition CVD and mechanical lift-off methods are mainly used in laboratories, but both methods have certain drawbacks, among them:
CVD method for growing beta-Ga2O3Although the rate is relatively fast, the generation of beta-Ga is difficult to control precisely2O3Film thickness, and therefore two-dimensional β -Ga of low dimensional and even atomic scale thickness cannot be achieved to a true extent2O3Thin film, and at the same time, beta-Ga formed due to CVD method2O3Most of them are polycrystalline, and thus have a great influence on the device performance.
Compared with chemical vapor deposition CVD, the mechanical stripping method has low cost and simple operation, and is the method mainly adopted in the laboratory at present. But due to this beta-Ga2O3The material is not a strict layered two-dimensional structure, and the chemical bond in the (100) direction is weaker than those in the (010) and (001) directions, and the material is more easily broken by external mechanical action. Thus obtaining low dimensional beta-Ga by mechanical exfoliation2O3The quality and thickness of the film are difficult to control, and the film can not be applied to large-area beta-Ga2O3And (3) preparing a film.
Disclosure of Invention
The present invention is directed to the above-mentioned prior artIn order to overcome the defects, the invention provides a transistor based on a two-dimensional gallium oxide film and a preparation method thereof, which are convenient to strip and are used for treating beta-Ga2O3The thickness and the area of the film are accurately controlled, a semiconductor/metal electrode interface structure is reconstructed, and high-performance beta-Ga is obtained2O3Thin film transistor electronic device.
The technical scheme of the invention is realized as follows:
1. the transistor based on the two-dimensional gallium oxide film sequentially comprises a substrate, a channel layer and metal source and drain electrodes from bottom to top, and is characterized in that:
the substrate is Si/SiO2Substrate heavily doped with P-type Si as bottom gate electrode, thermal oxidation of SiO2As gate dielectric material;
the channel layer adopts two-dimensional beta-Ga2O3The film is used for reducing the thickness of the channel layer, improving the transmission performance of the interface of the semiconductor/metal electrode and improving the performance of the device.
Further, the two-dimensional beta-Ga2O3The film adopts a non-laminated two-dimensional structure with the thickness of 4-8 nm.
Further, the Si/SiO2Substrate of SiO2The layer thickness is 100 to 300 nm.
Furthermore, the metal source and drain electrodes are made of any one of gold Au, titanium-gold Ti/Au and aluminum Al, and the thickness of the metal source and drain electrodes is 100-150 nm.
2. A preparation method of a transistor based on a two-dimensional gallium oxide film is characterized by comprising the following steps:
1) selecting Si/SiO2Carrying out pretreatment of cleaning and blow-drying on the substrate;
2) two-dimensional beta-Ga for preparing channel layer2O3A film;
2a) cleaning a quartz tube and a corundum boat of the tube furnace by adopting argon with the flow of 15-20 sccm;
2b) selecting two-dimensional layered materials with different surface areas, placing the two-dimensional layered materials in a corundum boat, and vacuumizing a quartz tube by using a mechanical pump to reduce the air pressure to 10-5～10-4Torr；
2c) Introducing protective gas into the quartz tube, heating to 800-900 ℃ in a stepped manner at the speed of 10 ℃/min, keeping the temperature for 20min, and stopping introducing the protective gas;
2d) introducing high-purity oxygen with the flow rate of 80-100 sccm into the quartz tube, and carrying out oxidation reaction on the surface of the two-dimensional layered material for 60-120 min to generate the two-dimensional layered material beta-Ga2O3Film to obtain two-dimensional layered material/two-dimensional beta-Ga2O3A heterostructure;
2e) cutting off the heating power supply, closing the oxygen introduction, introducing nitrogen to exhaust the oxygen, naturally cooling the quartz tube to room temperature in the nitrogen atmosphere, and taking out the two-dimensional layered material/two-dimensional beta-Ga on the corundum boat2O3A heterostructure;
2f) two-dimensional beta-Ga for two-dimensional layered material surface using transfer polymer2O3Transferring the film to the upper surface of the pretreated substrate to form a substrate/two-dimensional beta-Ga2O3A thin film heterostructure;
3) in a base substrate/two-dimensional beta-Ga2O3And preparing a metal source electrode and a metal drain electrode on two sides of the thin film structure.
Compared with the prior art, the invention has the following advantages:
firstly, the invention generates two-dimensional beta-Ga on the surface of the two-dimensional layered material by oxidation2O3Layer of the beta-Ga2O3Van der Waals force connection is formed between the two-dimensional layered material and the bottom two-dimensional layered material, and the two-dimensional layered material is easy to peel off under the action of external machinery. Compared with the traditional mechanical stripping method for preparing the beta-Ga2O3The film has more effective peeling effect.
Secondly, the invention can generate beta-Ga with different areas and thicknesses on the surface of the two-dimensional layered material by controlling the surface area and the surface oxidation time of the two-dimensional layered material put into the corundum boat2O3Thin film, thereby realizing two-dimensional beta-Ga2O3Precise control of the film.
Third, the present invention is achieved by preparing two dimensions of atomic scale thicknessβ-Ga2O3As a channel layer of a thin film transistor, the channel layer improves and promotes the material property, simultaneously promotes the transmission performance of a semiconductor/electrode metal interface, and is convenient for realizing high-performance Ga2O3Electronic devices and industrialized popularization thereof.
Drawings
FIG. 1 is a diagram of the structure of a device of the present invention;
FIG. 2 is a flow chart of the fabrication of the device of the present invention.
Detailed Description
In order to make the technical solution of the present invention better understood and practical for those skilled in the art, embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Referring to fig. 1, the device structure of the present invention includes a substrate 1, a channel layer 2, a metal source electrode 3 and a drain electrode 4.
The substrate 1 is Si/SiO2Substrate heavily doped with P-type Si as bottom gate electrode, and SiO2The layer thickness is 100 to 300 nm.
The channel layer 2 is positioned on the substrate 1 and adopts non-laminated two-dimensional structure beta-Ga2O3A thin film having a thickness of 4 to 8 nm;
the metal source electrode 3 and the drain electrode 4 are respectively located on two sides of the surface of the channel layer 2, and are all made of any one of gold Au, titanium gold Ti/Au and aluminum Al, and the thickness of the metal source electrode and the metal drain electrode is 100-150 nm.
Referring to fig. 2, the process of manufacturing the device of the present invention includes: firstly, a substrate is pretreated, and then a channel layer two-dimensional beta-Ga is prepared2O3And (5) film forming, and finally preparing the metal electrode. Three examples are given below for further illustration.
Example 1: preparation of SiO in substrate2The thickness is 100nm, and the two-dimensional layered material is GaSe, beta-Ga2O3The surface area of the film layer is 1cm2The thickness is 4nm, the transfer polymer is polydimethylsiloxane PDMS, and a mask plate is utilized to evaporate and plate a thin film transistor with an Au electrode with the thickness of 100 nm.
Step 1: pretreatment of Si/SiO2A base substrate;
1.1) reaction of Si/SiO2Sequentially putting the substrate into deionized water, acetone and alcohol solution, and respectively ultrasonically cleaning for 20 min;
1.2) with N2Blow drying of Si/SiO2Substrate to obtain cleaned Si/SiO2A base substrate;
step 2: preparation of two-dimensional beta-Ga2O3A channel layer of a thin film.
2.1) cleaning a quartz tube and a corundum boat of the tube furnace by adopting argon with the flow of 15 sccm;
2.2) selecting the surface area to be 1cm2The two-dimensional layered material GaSe is placed in a corundum boat, and a mechanical pump is used for vacuumizing a quartz tube to reduce the air pressure to 10-5Torr；
2.3) introducing nitrogen with the flow rate of 40sccm into the quartz tube as protective gas, heating to 800 ℃ in a step-by-step manner at the speed of 10 ℃/min, keeping the temperature for 20min, and stopping introducing the nitrogen;
2.4) introducing high-purity oxygen with the flow rate of 80sccm into the quartz tube, and carrying out oxidation reaction on the surface of the two-dimensional layered material GaSe for 60min to generate the two-dimensional layered material beta-Ga2O3Film to obtain GaSe/beta-Ga2O3Heterostructure, i.e. two-dimensional layered material GaSe under layer, two-dimensional beta-phase gallium oxide material beta-Ga2O3A vertical stacked heterojunction structure on the upper layer;
2.5) cutting off the heating power supply, closing the introduction of oxygen, introducing nitrogen to exhaust the oxygen, naturally cooling the quartz tube to room temperature in the nitrogen atmosphere, and taking out GaSe/beta-Ga on the corundum boat2O3A heterostructure;
2.6) two-dimensional beta-Ga on the surface of a two-dimensional layered material GaSe by using polydimethylsiloxane PDMS as a transfer polymer2O3Film transfer to pretreated Si/SiO2The upper surface of the substrate is coated to obtain Si/SiO2Substrate/two-dimensional beta-Ga2O3Thin film heterostructures, i.e. Si/SiO2The substrate is arranged at the lower layer, and the two-dimensional beta-phase gallium oxide material beta-Ga2O3Vertically stacking a heterojunction structure on the upper layerAnd preparing a channel layer on the substrate.
And step 3: in Si/SiO2Substrate/two-dimensional beta-Ga2O3And preparing a metal source electrode and a metal drain electrode on the film structure by evaporation through a mask.
3.1) preparation of the finished Si/SiO2Substrate/two-dimensional beta-Ga2O3The film structure is placed into a vacuum chamber through a mask plate, and the vacuum chamber is vacuumized to ensure that the air pressure is reduced to 10-5Pa below;
3.2) to
At a rate of two-dimensional beta-Ga2O3And an Au metal electrode with the thickness of 100nm is evaporated on the surface of the film.
Example 2: preparation of SiO in substrate2The thickness is 200nm, and the two-dimensional layered material is GaSe, beta-Ga2O3The surface area of the film layer is 4cm2And the thickness is 6nm, the transfer polymer is polydimethylsiloxane PDMS, and a film transistor of an Al electrode with the thickness of 120nm is evaporated by using a mask.
The method comprises the following steps: selecting Si/SiO2And carrying out pretreatment of cleaning and blow-drying on the substrate.
The specific implementation of this step is the same as in step 1 of example 1.
Step two: preparation of two-dimensional beta-Ga2O3A channel layer of a thin film.
Firstly, cleaning a quartz tube and a corundum boat of a tube furnace by adopting argon with the flow of 15 sccm;
next, a surface area of 4cm was selected2The two-dimensional layered material GaSe is placed in a corundum boat, and a mechanical pump is used for vacuumizing a quartz tube to reduce the air pressure to 10-5Torr；
Then, introducing nitrogen with the flow of 50sccm into the quartz tube as protective gas, heating to 850 ℃ at the speed of 10 ℃/min in a stepwise manner, keeping the temperature for 20min, and stopping introducing the nitrogen;
then, high purity oxygen gas was introduced into the quartz tube at a flow rate of 90sccm, and the two-dimensional flow was measuredOxidizing the GaSe surface of the layered material for 90min to generate a two-dimensional layered material beta-Ga2O3Film to obtain GaSe/beta-Ga2O3Heterostructure, i.e. two-dimensional layered material GaSe under layer, two-dimensional beta-phase gallium oxide material beta-Ga2O3A vertical stacked heterojunction structure on the upper layer;
then, cutting off the heating power supply, closing the oxygen introduction, introducing nitrogen to exhaust the oxygen, naturally cooling the quartz tube to room temperature in the nitrogen atmosphere, and taking out the GaSe/beta-Ga on the corundum boat2O3A heterostructure;
then, two-dimensional beta-Ga on the GaSe surface of the two-dimensional layered material is transferred by using polydimethylsiloxane PDMS as a transfer polymer2O3Film transfer to pretreated Si/SiO2The upper surface of the substrate is coated to obtain Si/SiO2Substrate/two-dimensional beta-Ga2O3Thin film heterostructures, i.e. Si/SiO2The substrate is arranged at the lower layer, and the two-dimensional beta-phase gallium oxide material beta-Ga2O3And vertically superposing the heterojunction structure on the upper layer to finish the preparation of the channel layer on the substrate.
Step three: in Si/SiO2Substrate/two-dimensional beta-Ga2O3And preparing a metal source electrode and a metal drain electrode on the film structure by evaporation through a mask.
First, the prepared Si/SiO2Substrate/two-dimensional beta-Ga2O3The film structure is placed into a vacuum chamber through a mask plate, and the vacuum chamber is vacuumized to ensure that the air pressure is reduced to 10-5Pa below;
then, in
At a rate of two-dimensional beta-Ga2O3And depositing an Al metal electrode with the thickness of 120nm on the surface of the film by evaporation.
Example 3: preparation of SiO in substrate2The thickness is 300nm, and the two-dimensional layered material is GaS, beta-Ga2O3The surface area of the film layer is 9cm28nm thick, the transfer polymer is polymethyl methacrylate PMMAAnd photoetching a thin film transistor with a titanium Ti/Au electrode with the thickness of 150 nm.
Step A: selecting Si/SiO2And carrying out pretreatment of cleaning and blow-drying on the substrate.
The specific implementation of this step is the same as in step 1 of example 1.
And B: preparation of two-dimensional beta-Ga2O3A channel layer of a thin film.
B1) Cleaning a quartz tube and a corundum boat of the tube furnace by adopting argon with the flow of 20 sccm;
B2) selecting the surface area of 9cm2Placing the two-dimensional layered material GaS in a corundum boat, and vacuumizing a quartz tube by using a mechanical pump to reduce the air pressure to 10-4Torr；
B3) Introducing nitrogen with the flow rate of 60sccm into the quartz tube as protective gas, heating to 900 ℃ in a stepped manner at the speed of 10 ℃/min, keeping the temperature for 20min, and stopping introducing the nitrogen;
B4) introducing high-purity oxygen with the flow rate of 80sccm into the quartz tube, and performing oxidation reaction on the surface of the two-dimensional layered material GaS for 120min to generate the two-dimensional layered material beta-Ga2O3Film to obtain GaS/beta-Ga2O3Heterostructure, i.e. two-dimensional layered material of GaS under layer, two-dimensional beta-phase gallium oxide material of beta-Ga2O3A vertical stacked heterojunction structure on the upper layer;
B5) cutting off the heating power supply, closing the oxygen introduction, introducing nitrogen to exhaust the oxygen, naturally cooling the quartz tube to room temperature in the nitrogen atmosphere, and taking out the GaS/beta-Ga on the corundum boat2O3A heterostructure;
B6) using polymethyl methacrylate (PMMA) as a transfer polymer to transfer two-dimensional beta-Ga on the surface of a two-dimensional layered material GaS2O3Film transfer to pretreated Si/SiO2The upper surface of the substrate is coated to obtain Si/SiO2Substrate/two-dimensional beta-Ga2O3Thin film heterostructures, i.e. Si/SiO2The substrate is arranged at the lower layer, and the two-dimensional beta-phase gallium oxide material beta-Ga2O3The heterojunction structure is vertically superposed on the upper layer to complete the channel layer on the substrateAnd (4) preparation.
And C: in Si/SiO2Substrate/two-dimensional beta-Ga2O3And preparing metal source electrodes and drain electrodes on the thin film structure by photoetching.
C1) On Si/SiO by spin coating2Substrate/two-dimensional beta-Ga2O3Spin-coating a layer of photoresist on the surface of the thin film structure and drying to obtain Si/SiO2Substrate/two-dimensional beta-Ga2O3A thin film/photoresist structure;
C2) using photoetching mask plate and ultraviolet radiation on Si/SiO2Substrate/two-dimensional beta-Ga2O3Etching electrode pattern on the surface of the film/photoresist structure and soaking the electrode pattern in developing solution to wash away exposed photoresist to obtain Si/SiO stained with developing solution2Substrate/two-dimensional beta-Ga2O3A film/mask structure;
C3) cleaning Si/SiO stained with developing solution by deionized water2Substrate/two-dimensional beta-Ga2O3Drying the film/mask structure to remove the developer solution to obtain cleaned and dried Si/SiO2Substrate/two-dimensional beta-Ga2O3A film/mask structure;
C3) on Si/SiO by electron beam evaporation2Substrate/two-dimensional beta-Ga2O3Film/mask surface to
Depositing a titanium Ti/Au metal source drain electrode with the thickness of 150nm at the speed rate, and finally removing the residual photoresist by using an acetone solution.
The foregoing description is only exemplary of the invention and is not intended to limit the invention to the particular forms disclosed, but it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention.
Claims (6)
1. A method for preparing a transistor based on a two-dimensional gallium oxide film is characterized in that the transistor based on the two-dimensional gallium oxide film sequentially comprises a substrate (1), a channel layer (2) and metal source and drain electrodes (3, 4) from bottom to top, wherein the substrate (1) is made of Si/SiO2The substrate, its lower heavy doping P type Si is regarded as the bottom gate electrode; the channel layer (2) adopts two-dimensional beta-Ga2O3The thin film is used for reducing the thickness of the channel layer, improving the transmission performance of a semiconductor/metal electrode interface and improving the performance of a device; the method is characterized by comprising the following steps:
1) selecting Si/SiO2Carrying out pretreatment of cleaning and blow-drying on the substrate;
2) two-dimensional beta-Ga for preparing channel layer2O3A film;
2a) cleaning a quartz tube and a corundum boat of the tube furnace by adopting argon with the flow of 15-20 sccm;
2b) selecting two-dimensional layered materials with different surface areas, placing the two-dimensional layered materials in a corundum boat, and vacuumizing a quartz tube by using a mechanical pump to reduce the air pressure to 10-5～10-4Torr；
2c) Introducing protective gas into the quartz tube, heating to 800-900 ℃ in a stepped manner at the speed of 10 ℃/min, keeping the temperature for 20min, and stopping introducing the protective gas;
2d) introducing high-purity oxygen with the flow rate of 80-100 sccm into the quartz tube, and performing oxidation reaction on the surface of the two-dimensional layered material for 60-120 min to generate the two-dimensional material beta-Ga2O3Film to obtain two-dimensional material/two-dimensional beta-Ga2O3A heterostructure;
2e) cutting off the heating power supply, closing the oxygen introduction, introducing nitrogen to exhaust the oxygen, naturally cooling the quartz tube to room temperature in the nitrogen atmosphere, and taking out the two-dimensional material/two-dimensional beta-Ga on the corundum boat2O3A heterostructure;
2f) two-dimensional beta-Ga for two-dimensional layered material surface using transfer polymer2O3Transferring the film to the upper surface of the pretreated substrate to form a substrate/two-dimensional beta-Ga2O3A thin film heterostructure;
3) in a base substrate/two-dimensional beta-Ga2O3And preparing a metal source electrode and a metal drain electrode on two sides of the thin film structure.
2. The method of claim 1, wherein 1) para-Si/SiO2The substrate is pretreated by firstly processing Si/SiO2Sequentially putting the substrate into a detergent, deionized water, acetone and an ethanol solution, and respectively ultrasonically cleaning for 20 min; reuse of N2Blow-drying to obtain cleaned Si/SiO2A base substrate.
3. The method according to claim 1, wherein the two-dimensional material in 2b) is GaSe or GaS, and the surface area of the two-dimensional material is 1-10 cm2。
4. The method as claimed in claim 1, wherein the protective gas introduced into 2c) is nitrogen gas, and the gas flow rate is 40-60 sccm.
5. The method of claim 1, wherein 2f) transcribes two-dimensional β -Ga2O3The transfer polymer of the film is either polydimethylsiloxane PDMS or polymethyl methacrylate PMMA.
6. The method of claim 1, wherein the method of preparing the metal source and drain electrodes in 3) employs any one of mask evaporation or photolithography;
the mask plate is evaporated by using a substrate/two-dimensional beta-Ga2O3The film structure is placed into a vacuum chamber through a mask plate, and the vacuum chamber is vacuumized to reduce the air pressure to 10-5Pa below, then
Evaporating the electrode metal at the rate of (3);
the photoetching is to make the substrate/two-dimensional beta-Ga2O3After the thin film structure is cleaned and dried, a layer of photoresist is coated on the surface of the thin film structure in a spinning mode and is dried; etching the electrode pattern by using a mask and ultraviolet radiation, soaking the electrode pattern in a developing solution to wash away exposed photoresist, washing the electrode pattern by using deionized water to remove the developing solution, and drying the electrode pattern; and finally, depositing electrode metal on the surface of the device through electron beam evaporation, and finally removing the residual photoresist by using an acetone solution.
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| CN113555444A (en) * | 2021-07-06 | 2021-10-26 | 浙江芯国半导体有限公司 | High-quality gallium oxide semiconductor device and preparation method thereof |
| CN113870922A (en) * | 2021-09-28 | 2021-12-31 | 哈尔滨工业大学 | A kind of optical storage, electrical storage composite device based on GaSe/InSe heterojunction and preparation method thereof |
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