CN111987031A - Chuck device and semiconductor device - Google Patents
Chuck device and semiconductor device Download PDFInfo
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- CN111987031A CN111987031A CN201910438245.5A CN201910438245A CN111987031A CN 111987031 A CN111987031 A CN 111987031A CN 201910438245 A CN201910438245 A CN 201910438245A CN 111987031 A CN111987031 A CN 111987031A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000007664 blowing Methods 0.000 claims description 16
- 238000001816 cooling Methods 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 10
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 235000014676 Phragmites communis Nutrition 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000011889 copper foil Substances 0.000 claims description 4
- 239000011888 foil Substances 0.000 claims description 4
- 239000002826 coolant Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a chuck device and semiconductor equipment, wherein the chuck device comprises a base, a base and a chuck for bearing a processed workpiece, which are sequentially arranged from bottom to top, wherein a heat insulation piece is arranged between the base and the base; the short-circuit structure is also included; the short-circuit structure is arranged on the outer sides of the base and the base or between the base and is electrically contacted with the base and the base respectively; the lower surface of the chuck is attached to the upper surface of the base. By the invention, a radio frequency power supply can be added, and the process stability is ensured while the radio frequency function is realized.
Description
Technical Field
The invention relates to the technical field of microelectronics, in particular to a chuck device and a semiconductor device.
Background
With the development of IC (Integrated circuit) technology, the IC with smaller process becomes the development direction of IC technology in the present society, and the requirement of IC processing equipment with smaller process for the technology is higher and higher. As a key technology affecting the development of IC technology: the physical vapor deposition technology has higher and higher requirements on process environment and process conditions for realizing smaller process, and needs a coating technology combining magnetron sputtering and radio frequency sputtering for realizing small process and high-uniformity coating. The requirement of the coating technology on a high-temperature stainless steel heater is higher and higher. Not only is a higher temperature required for the heater, but also a better temperature uniformity of the silicon wafer heated by the heater is required, and the silicon wafer is required to be charged in a suspension manner. The traditional heater is grounded, so that the silicon wafer cannot be electrified in a suspended mode, and a radio frequency power supply cannot be applied; further, the electrostatic chuck for carrying a workpiece to be processed in the prior art can generally be loaded with a dc power supply and also has a heating function, but it cannot be added with a radio frequency power supply, and once the radio frequency power supply is added, an ignition phenomenon may be caused, which affects the process stability.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a chuck device and semiconductor equipment, wherein a radio frequency power supply can be added, and the process stability is ensured while the radio frequency function is realized.
The chuck device comprises a base, a base and a chuck for bearing a workpiece to be processed, wherein the base, the base and the chuck are sequentially arranged from bottom to top; the short-circuit structure is also included;
the short-circuit structure is arranged on the outer sides of the base and the base or between the base and is electrically contacted with the base and the base respectively;
the lower surface of the chuck is attached to the upper surface of the base.
Preferably, the two ends of the short circuit structure are respectively fixedly connected with the base and the base in a screw or clamping manner.
Preferably, the shorting structure is one of a wire, a copper foil, or a stainless steel foil.
Preferably, the short-circuit structure is a beryllium copper reed; the beryllium copper reed comprises: the elastic piece part and the clamping part;
the elastic piece part is arranged between the base and is in elastic contact with the base and the base respectively;
The clamping part is clamped with the base.
Preferably, the lower surface of the chuck is welded to the upper surface of the base.
Preferably, the chuck device further comprises: a power line and a radio frequency isolation ring;
a radio frequency electrode is arranged in the chuck; the power line sequentially penetrates through the base and the base from bottom to top and is connected with the radio-frequency electrode in the chuck;
the radio frequency isolation ring is located between the base and used for sealing a gap between through holes in the base, through which the power line passes.
Preferably, the chuck device further comprises:
a heating element and an electrostatic electrode disposed within the chuck.
Preferably, the chuck device further comprises:
and the cooling pipeline is provided with a cooling channel in the base and is used for introducing a cooling medium into the cooling channel.
Preferably, the chuck device further comprises: a bellows assembly and an upper back-blowing pipeline; the corrugated pipe assembly is positioned below the base and is fixedly connected with the base;
the upper back-blowing pipeline is used for conveying process gas to the upper surface of the chuck.
A semiconductor device, comprising: the processing device comprises a process chamber and a chuck device arranged in the process chamber, wherein the chuck device is used for bearing a workpiece to be processed;
The chuck device is the chuck device described in the application.
The invention has the following beneficial effects:
the invention provides a chuck device and semiconductor equipment, which comprise a base, a base and a chuck which are sequentially arranged from bottom to top, wherein the lower surface of the chuck is attached to the upper surface of the base, the base is separated from the base, and a heat insulation piece is arranged between the base and the bottom of the base; further comprising: the short-circuit structure is used for enabling the base and the base to be electrically communicated; in the invention, the lower surface of the chuck is attached to the upper surface of the base, so that the ignition condition cannot be generated, and a radio frequency power supply can be added to the chuck; the short circuit structure makes the electric potential between base and the base the same, does not have the potential difference, and when loading radio frequency power on the chuck, the phenomenon of striking sparks can not appear in the clearance that causes because the heat insulating part between base and the base to guaranteed technology stability when having realized the radio frequency function.
Drawings
FIG. 1 is a schematic structural diagram of a chuck assembly according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a short circuit structure according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a short-circuit structure respectively fixedly connected to a base and a base according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another embodiment of the present invention in which the shorting structure is fixedly connected to the base and the base, respectively;
fig. 5 is another schematic structural diagram of a chuck apparatus according to an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the chuck device and the semiconductor apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a chuck apparatus according to an embodiment of the present invention, including: the device comprises a base 5, a base 2 and a chuck 1 for bearing a workpiece to be processed, which are arranged from bottom to top in sequence, wherein a heat insulation piece 4 is arranged between the base 5 and the base 2; further comprising: a shorting structure 3; the short-circuit structure 3 is used for electrically conducting the base 2 and the base 5; the lower surface of the chuck 1 is attached to the upper surface of the base 2; the shorting structure 3 is arranged outside or between the base 2 and the pedestal 5 and is in electrical contact with the base 2 and the pedestal 5, respectively.
Specifically, heat insulating part 4 is located between base 2 and the base 5, realizes base 2 and base 5's isolation, and heat insulating part 4 can adopt the relatively poor heat conduction material processing of thermal conductivity to form, can be for heat conduction silicon or glass steel. The shape of the thermal insulation 4 may be a block or ring or a sheet structure.
The chuck device provided by the embodiment of the invention comprises a base, a base and a chuck which are sequentially arranged from bottom to top, wherein the lower surface of the chuck is attached to the upper surface of the base, the base is separated from the base, and a heat insulation piece is arranged between the base and the bottom of the base; further comprising: the short-circuit structure is used for enabling the base and the base to be electrically communicated; in the invention, the lower surface of the chuck is attached to the upper surface of the base, so that the ignition condition cannot be generated, and a radio frequency power supply can be added to the chuck; the short circuit structure makes the electric potential between base and the base the same, does not have the potential difference, and when loading radio frequency power on the chuck, the phenomenon of striking sparks can not appear in the clearance that causes because the heat insulating part between base and the base to guaranteed technology stability when having realized the radio frequency function.
Further, the chuck apparatus shown in fig. 1 further includes: a bellows assembly 6; the corrugated pipe assembly 6 is positioned below the base 5 and is fixedly connected with the base 5; in this embodiment, bellows subassembly 6 is in the same place with base 5 is installed, when chuck device is located the process chamber, can realize reciprocating of base 2 and chuck 1 through the height that promotes bellows subassembly 6, satisfies the target base interval of technology demand.
In particular, the shorting structure 3 is arranged outside or between the base 2 and the pedestal 5 and is in electrical contact with the base 2 and the pedestal 5, respectively. Referring to fig. 1, the shorting structure 3 is disposed outside the base 2 and the base 5.
Further, in another embodiment of the present invention, two ends of the short-circuit structure 3 are fixedly connected to the base 2 and the base 5 by screws 14 or by clamping. Referring to fig. 1, 2 and 3, in fig. 1 and 2, two ends of the short circuit structure 3 are respectively and fixedly connected with the base 2 and the base 5 in a clamping manner. And in fig. 3, two ends of the short-circuit structure 3 are fixedly connected with the base 2 and the base 5 respectively through screws 14.
Specifically, the shorting structure 3 is one of a wire, a copper foil, or a stainless steel foil. As in fig. 2, the shorting structure 3 is a copper foil or a stainless steel foil, whereas in fig. 3 the shorting structure 3 is a wire.
Further, in another embodiment of the present invention, referring to fig. 4, the shorting structure 3 is a beryllium copper spring, and the beryllium copper spring is disposed between the base 2 and the base 5 and elastically contacts with the base and the base, respectively. The beryllium copper reed comprises: a spring piece portion 31 and a clip portion 32; the elastic piece part 31 is arranged between the base 2 and the base 5 and elastically contacts with the base 2 and the base 5 respectively; the clamping part 32 is clamped with the base 2. In another embodiment of the invention, the clamping part 32 of the beryllium copper spring can be connected with the base 5, and the beryllium copper spring is not easy to fall off when the base 2 and the base 5 are in elastic contact through clamping of the clamping part.
In summary, the shorting structure may be disposed at the outer sides of the base and the base or between the base and the base, and electrically contacts the base and the base, respectively; of course, the invention is not limited to the above embodiments, and the short circuit structure that can make the base and the base electrically contact is within the protection scope of the invention, so the short circuit structure in the invention has various selection forms and is convenient to implement.
In one embodiment of the invention, the lower surface of the chuck 1 is welded to the upper surface of the base 2. Because the lower surface of the chuck is welded with the upper surface of the base, no gap exists between the lower surface of the chuck and the upper surface of the base. The chuck 1 may be made of ceramic, and the base 2 may be made of silicon carbide material, copper material or iron-nickel-cobalt alloy material, or other materials which can be welded with ceramic, can conduct electricity, and have certain strength. When radio frequency voltage is applied to two objects with different electric potentials, if a gap between the two objects meets a certain range, a spark phenomenon can occur between the two objects. Because the materials of the chuck 1 and the base 2 are different, the potential difference exists between the chuck 1 and the base 2, but the chuck 1 and the base 2 are attached without gaps, and the phenomenon of sparking can not occur even if the potential difference exists between the chuck 1 and the base. Further, during the process, a process isolating ring assembly for isolating the process environment is disposed on the side of the chuck 1 to protect the chuck 1 from the process environment.
In one embodiment of the present invention, the chuck apparatus further comprises: a heating element (not shown) and an electrostatic electrode (not shown) disposed within the chuck 1; the heating element is arranged in the chuck 1, so that the chuck device has a heating function, the heating element can directly heat the chuck 1, and the lower surface of the chuck 1 is attached to the upper surface of the base 2, so that the back blowing is not needed between the chuck 1 and the base 2 to transfer energy, and the back blowing gas is saved; further, an electrostatic electrode is provided in the chuck, so that the chuck has an electrostatic adsorption function, and thus the chuck of the present invention may be an electrostatic chuck.
As shown in fig. 5, another structural schematic diagram of a chuck apparatus according to an embodiment of the present invention is provided, and with respect to the chuck apparatus shown in fig. 1, the chuck apparatus of fig. 5 further includes: a power line 7 and a radio frequency isolation ring 8.
A radio frequency electrode (not shown) is arranged in the chuck 1; the power cord 7 sequentially penetrates through the base 5 and the base 2 from bottom to top and is connected with the radio frequency electrode in the chuck 1.
A radio frequency isolation ring 8 is located between the base 5 and the base 2 for sealing the gap between the through holes 51 in the base 5 through which the power supply line 7 passes.
In the process of the chuck device provided by the invention, the radio frequency voltage is applied to the workpiece to be processed through the power line 7, and a direct current bias voltage or a radio frequency voltage can also be simultaneously applied through the power line 7. When applying radio frequency voltage, because base 5 ground connection, base 2 realizes through short circuit structure 3 with base 5 short circuit, and base 2 and base 5 are in same electric potential, and the gap between base 2 and the base 5 can not take place to strike sparks. The chuck 1 is different from the base 2 in material, and a potential difference exists between the chuck 1 and the base 2, further, an integral welding structure does not exist in a gap between the lower surface of the chuck 1 and the upper surface of the base 2, and a sparking condition is not met, so that the sparking phenomenon cannot occur, and the glow phenomenon cannot occur in the technical process.
In summary, the chuck device provided by the embodiment of the invention does not generate sparking phenomenon when applying radio frequency voltage under the process condition, and can maintain the stability of the process.
Further, in another embodiment of the present invention, as shown in fig. 5, the chuck apparatus shown in fig. 5 further includes, in comparison with the chuck apparatus shown in fig. 1:
a cooling pipeline 9, a cooling channel (not shown) is arranged in the base 5, and the cooling pipeline 9 is used for introducing a cooling medium into the cooling channel.
The cooling pipeline 9 is installed on the base 5, so that the cooling of the base 5 can be realized, the moving part, namely the corrugated pipe assembly 6, can be maintained at low temperature, and the service life of the corrugated pipe assembly 6 is prolonged. Further, in the present embodiment, as shown in fig. 5, a gap is formed between the base 5 and the base 2, and in the process, since the process environment is a low-pressure environment, the gap between the base 2 and the base 5 has a heat insulation effect, so that the heat conduction efficiency is reduced, and the base 5 is in a low-temperature state. In the embodiment, the base 5 has a cooling channel, which can realize a water cooling or air cooling function, thereby further reducing the temperature of the base 5, and further realizing that the bellows assembly 6 is in a low temperature state.
Further, as shown in fig. 5, the chuck apparatus of the present invention may further include: a heating wire 10 and a heating isolating ring 11, wherein the heating wire 10 can be connected with the heating element in the chuck 1, and the heating isolating ring 11 is sleeved on the heating wire 1 and positioned between the base 5 and the bellows assembly 6 for sealing the heating wire 10 and thermally isolating the base 5 and the bellows assembly 6.
The chuck apparatus may further include: an upper back blowing pipeline 12 and a back blowing isolation ring 13; the upper back blowing pipeline 12 is used for delivering process gas to the upper surface of the chuck 1, so that the process gas is provided for the back surface of the workpiece to be processed on the chuck 1, and the temperature rise speed and the temperature uniformity of the workpiece to be processed are improved. The back blowing isolation ring 13 is used for sealing the upper back blowing pipeline 12, and the back blowing isolation ring 13 is sleeved on the back blowing pipeline 12 and is positioned between the base 5 and the corrugated pipe assembly 6 and used for isolating the back blowing pipeline 12 and the base 5 from the corrugated pipe assembly 6.
In view of the above chuck device, the present invention provides a semiconductor apparatus comprising: the processing device comprises a process chamber and a chuck device arranged in the process chamber, wherein the chuck device is used for carrying a workpiece to be processed and comprises the chuck device in the embodiment of the invention.
In summary, the chuck apparatus and the semiconductor device provided by the embodiments of the present invention have the following features:
1) the chuck device provided by the invention can be used for applying radio frequency, preventing sparking and high temperature and has the function of an electrostatic chuck.
2) The chuck device provided by the invention realizes the same potential of the base and the base through the short-circuit structure, and realizes the spark prevention.
3) According to the chuck device provided by the invention, the lower surface of the chuck is attached to the upper surface of the base, and after the heating element is arranged in the chuck, the back blowing is not needed to transfer energy, so that the lower back blowing function is reduced.
4) According to the chuck device, heat transmission from the chuck to the base is reduced through the heat insulation piece between the base and the base, the cooling of the base is realized, and the temperature of the square corrugated pipe assembly below the base can be further reduced.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A chuck device comprises a base, a base and a chuck for bearing a workpiece to be processed, wherein the base, the base and the chuck are sequentially arranged from bottom to top; the device is characterized by also comprising a short-circuit structure;
the short-circuit structure is arranged on the outer sides of the base and the base or between the base and is electrically contacted with the base and the base respectively;
the lower surface of the chuck is attached to the upper surface of the base.
2. The chuck device according to claim 1, wherein two ends of the short circuit structure are respectively fixedly connected with the base and the base by screws or clamping.
3. The chuck assembly of claim 2, wherein the shorting structure is one of a wire, a copper foil, or a stainless steel foil.
4. The chuck assembly according to claim 3 wherein the shorting structure is a beryllium copper reed;
the beryllium copper reed comprises: the elastic piece part and the clamping part;
the elastic piece part is arranged between the base and is in elastic contact with the base and the base respectively;
the clamping part is clamped with the base.
5. The chuck assembly according to claim 1, wherein the lower surface of the chuck is welded to the upper surface of the base.
6. The chucking device as recited in any one of claims 1 to 5, further comprising: a power line and a radio frequency isolation ring;
a radio frequency electrode is arranged in the chuck; the power line sequentially penetrates through the base and the base from bottom to top and is connected with the radio-frequency electrode in the chuck;
the radio frequency isolation ring is located between the base and used for sealing a gap between through holes in the base, through which the power line passes.
7. The chucking device as recited in any one of claims 1 to 5, further comprising:
a heating element and an electrostatic electrode disposed within the chuck.
8. The chucking device as recited in any one of claims 1 to 5, further comprising:
and the cooling pipeline is provided with a cooling channel in the base and is used for introducing a cooling medium into the cooling channel.
9. The chucking device as recited in any one of claims 1 to 5, further comprising: a bellows assembly and an upper back-blowing pipeline; the corrugated pipe assembly is positioned below the base and is fixedly connected with the base;
The upper back-blowing pipeline is used for conveying process gas to the upper surface of the chuck.
10. A semiconductor device, comprising: a process chamber and a chucking device according to any one of claims 1 to 9 disposed inside the process chamber; the chuck device is used for bearing a workpiece to be processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910438245.5A CN111987031B (en) | 2019-05-23 | 2019-05-23 | Chuck device and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910438245.5A CN111987031B (en) | 2019-05-23 | 2019-05-23 | Chuck device and semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111987031A true CN111987031A (en) | 2020-11-24 |
| CN111987031B CN111987031B (en) | 2024-07-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910438245.5A Active CN111987031B (en) | 2019-05-23 | 2019-05-23 | Chuck device and semiconductor device |
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| Country | Link |
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| CN (1) | CN111987031B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021177510A (en) * | 2020-05-07 | 2021-11-11 | 京セラ株式会社 | Sample holder |
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| JPH07147274A (en) * | 1993-11-24 | 1995-06-06 | Tokyo Electron Ltd | Control of low-temperature processing device |
| US6081414A (en) * | 1998-05-01 | 2000-06-27 | Applied Materials, Inc. | Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system |
| EP1098354A2 (en) * | 1999-11-08 | 2001-05-09 | Applied Materials, Inc. | Apparatus for controlling temperature in a semiconductor processing system |
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| JP7523250B2 (en) | 2020-05-07 | 2024-07-26 | 京セラ株式会社 | Sample holder |
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| CN111987031B (en) | 2024-07-23 |
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