CN111922553A - Copper surface protective agent for advanced wafer packaging field and preparation method thereof - Google Patents
Copper surface protective agent for advanced wafer packaging field and preparation method thereof Download PDFInfo
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- CN111922553A CN111922553A CN202010792238.8A CN202010792238A CN111922553A CN 111922553 A CN111922553 A CN 111922553A CN 202010792238 A CN202010792238 A CN 202010792238A CN 111922553 A CN111922553 A CN 111922553A
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- Prior art keywords
- copper surface
- protective agent
- surface protective
- solution
- methylimidazole
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 75
- 239000010949 copper Substances 0.000 title claims abstract description 75
- 239000003223 protective agent Substances 0.000 title claims abstract description 50
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title abstract description 14
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 27
- 150000007524 organic acids Chemical class 0.000 claims abstract description 22
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002904 solvent Substances 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 14
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 14
- 125000005037 alkyl phenyl group Chemical group 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims abstract description 7
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 16
- 238000003756 stirring Methods 0.000 claims description 15
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 12
- 150000002460 imidazoles Chemical class 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 9
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 claims description 9
- WELZFURMIFFATQ-UHFFFAOYSA-N 5-methyl-2,4-diphenyl-1h-imidazole Chemical compound CC=1NC(C=2C=CC=CC=2)=NC=1C1=CC=CC=C1 WELZFURMIFFATQ-UHFFFAOYSA-N 0.000 claims description 8
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 8
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 8
- 235000019260 propionic acid Nutrition 0.000 claims description 8
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 8
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 7
- JESNJGKGWNVYRF-UHFFFAOYSA-N imidazo[1,2]pyrido[4,5-c]pyrazin-2-one Chemical compound N1=CC=NC2=NC3=NC(=O)N=C3C=C21 JESNJGKGWNVYRF-UHFFFAOYSA-N 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 6
- QTMDXZNDVAMKGV-UHFFFAOYSA-L copper(ii) bromide Chemical compound [Cu+2].[Br-].[Br-] QTMDXZNDVAMKGV-UHFFFAOYSA-L 0.000 claims description 6
- 239000004310 lactic acid Substances 0.000 claims description 6
- 235000014655 lactic acid Nutrition 0.000 claims description 6
- MGCJSIPFFQFYBB-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-methyl-4-phenyl-1H-imidazole Chemical compound COC=1C=C(C=CC1OC)C=1NC(=C(N1)C1=CC=CC=C1)C MGCJSIPFFQFYBB-UHFFFAOYSA-N 0.000 claims description 4
- IKCMEDJGOKBRFC-UHFFFAOYSA-N 2-benzyl-4-(2,4-dichlorophenyl)-5-methyl-1h-imidazole Chemical compound N=1C(C=2C(=CC(Cl)=CC=2)Cl)=C(C)NC=1CC1=CC=CC=C1 IKCMEDJGOKBRFC-UHFFFAOYSA-N 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 4
- 235000011054 acetic acid Nutrition 0.000 claims description 4
- 235000019253 formic acid Nutrition 0.000 claims description 4
- 238000005303 weighing Methods 0.000 claims description 4
- NSWNXQGJAPQOID-UHFFFAOYSA-N 2-(2-chlorophenyl)-4,5-diphenyl-1h-imidazole Chemical compound ClC1=CC=CC=C1C1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 NSWNXQGJAPQOID-UHFFFAOYSA-N 0.000 claims description 3
- PALVXRUKMAHOPW-UHFFFAOYSA-N 2-(4-chlorophenyl)-5-methyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=C(Cl)C=C1 PALVXRUKMAHOPW-UHFFFAOYSA-N 0.000 claims description 3
- AWVKQWIOURZHQZ-UHFFFAOYSA-N 2-[(2,4-dichlorophenyl)methyl]-4,5-diphenyl-1h-imidazole Chemical compound ClC1=CC(Cl)=CC=C1CC1=NC(C=2C=CC=CC=2)=C(C=2C=CC=CC=2)N1 AWVKQWIOURZHQZ-UHFFFAOYSA-N 0.000 claims description 3
- IQJMWFVIAPBMBL-UHFFFAOYSA-N 2-[(3-chlorophenyl)methyl]-1h-benzimidazole Chemical compound ClC1=CC=CC(CC=2NC3=CC=CC=C3N=2)=C1 IQJMWFVIAPBMBL-UHFFFAOYSA-N 0.000 claims description 3
- RGJVGSQPHPDGQG-UHFFFAOYSA-N 2-benzyl-4-(3,4-dichlorophenyl)-5-methyl-1h-imidazole Chemical compound N=1C(C=2C=C(Cl)C(Cl)=CC=2)=C(C)NC=1CC1=CC=CC=C1 RGJVGSQPHPDGQG-UHFFFAOYSA-N 0.000 claims description 3
- GOXBDVDMFJVVNM-UHFFFAOYSA-N 2-benzyl-6-chloro-1h-benzimidazole Chemical compound N1C2=CC(Cl)=CC=C2N=C1CC1=CC=CC=C1 GOXBDVDMFJVVNM-UHFFFAOYSA-N 0.000 claims description 3
- AAYASKAHPGVADW-UHFFFAOYSA-N 4,5-dimethyl-2-naphthalen-1-yl-1h-imidazole Chemical compound N1C(C)=C(C)N=C1C1=CC=CC2=CC=CC=C12 AAYASKAHPGVADW-UHFFFAOYSA-N 0.000 claims description 3
- YATKABCHSRLDGQ-UHFFFAOYSA-N 5-benzyl-2-phenyl-1h-imidazole Chemical compound C=1C=CC=CC=1CC(N=1)=CNC=1C1=CC=CC=C1 YATKABCHSRLDGQ-UHFFFAOYSA-N 0.000 claims description 3
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 claims description 3
- INQRDWQKHMKYTQ-UHFFFAOYSA-N 5-methyl-4-naphthalen-1-yl-2-phenyl-1h-imidazole Chemical compound N=1C(C=2C3=CC=CC=C3C=CC=2)=C(C)NC=1C1=CC=CC=C1 INQRDWQKHMKYTQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021589 Copper(I) bromide Inorganic materials 0.000 claims description 3
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 3
- 229910021590 Copper(II) bromide Inorganic materials 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 3
- NKNDPYCGAZPOFS-UHFFFAOYSA-M copper(i) bromide Chemical compound Br[Cu] NKNDPYCGAZPOFS-UHFFFAOYSA-M 0.000 claims description 3
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 claims description 3
- 229940076286 cupric acetate Drugs 0.000 claims description 3
- 229940045803 cuprous chloride Drugs 0.000 claims description 3
- 229910000366 copper(II) sulfate Inorganic materials 0.000 claims description 2
- GQDHEYWVLBJKBA-UHFFFAOYSA-H copper(ii) phosphate Chemical compound [Cu+2].[Cu+2].[Cu+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O GQDHEYWVLBJKBA-UHFFFAOYSA-H 0.000 claims description 2
- 229960003280 cupric chloride Drugs 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 22
- 238000005476 soldering Methods 0.000 abstract description 13
- 238000003466 welding Methods 0.000 abstract description 10
- 230000003647 oxidation Effects 0.000 abstract description 9
- 238000007254 oxidation reaction Methods 0.000 abstract description 9
- 230000035939 shock Effects 0.000 abstract description 9
- 230000004907 flux Effects 0.000 abstract description 7
- 230000001681 protective effect Effects 0.000 abstract description 6
- 229910000679 solder Inorganic materials 0.000 abstract description 6
- 239000013543 active substance Substances 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 230000009471 action Effects 0.000 abstract description 4
- 239000000243 solution Substances 0.000 description 30
- 239000013078 crystal Substances 0.000 description 17
- 238000001556 precipitation Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 7
- -1 imidazole compound Chemical class 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 239000003002 pH adjusting agent Substances 0.000 description 6
- 238000005406 washing Methods 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000013256 coordination polymer Substances 0.000 description 4
- 229920001795 coordination polymer Polymers 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- RAOSIAYCXKBGFE-UHFFFAOYSA-K [Cu+3].[O-]P([O-])([O-])=O Chemical compound [Cu+3].[O-]P([O-])([O-])=O RAOSIAYCXKBGFE-UHFFFAOYSA-K 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 3
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000861 blow drying Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007602 hot air drying Methods 0.000 description 2
- 125000002883 imidazolyl group Chemical group 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- LYCAIKOWRPUZTN-NMQOAUCRSA-N 1,2-dideuteriooxyethane Chemical compound [2H]OCCO[2H] LYCAIKOWRPUZTN-NMQOAUCRSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000002877 alkyl aryl group Chemical group 0.000 description 1
- 150000007980 azole derivatives Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000004699 copper complex Chemical class 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/40—Making wire or rods for soldering or welding
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
- Chemical Treatment Of Metals (AREA)
Abstract
The invention discloses a copper surface protective agent for the field of advanced wafer packaging and a preparation method thereof, wherein the copper surface protective agent comprises the following components in percentage by mass: 0.1-5% of alkyl phenyl imidazole compound; 0.01 to 0.3 percent of solubilizer; 1-20% of organic acid; 0.1-0.5% of metal compound and deionized water: 5 to 85 percent. The copper surface protective agent can deposit a layer of organic protective film on the copper surface of a wafer in a short time at a lower temperature of 40-50 ℃, can inhibit the oxidation corrosion of oxygen or other active substances in the air to the copper surface, has good moisture resistance and thermal stability, can resist thermal shock for more than three times in the assembly welding process, can be dissolved under the action of the soldering flux to expose a new copper surface, and can complete the welding process with molten solder.
Description
Technical Field
The invention relates to the field of advanced wafer packaging copper surface protective agents, in particular to a preparation method of a copper surface protective agent taking alkyl phenyl imidazole as a key film.
Background
Nowadays, electronic products are increasingly light, thin and miniaturized, and have more various functions, so that the chip, the carrier and the circuit board must be thinned, multilayered and small-hole, and have higher precision. The application and development of the Surface Mount Technology (SMT) for electronic circuits have made it difficult to meet the requirements of the prior hot air leveling process, because the size of the via hole of the wafer is more miniaturized and more buried/blind holes and inner holes of the wafer are used, which makes the requirements of the flatness of the wafer surface more severe. In the 7/1/2006, the RoHS instruction and the WEEE instruction are formally executed, which has higher requirements on electronic products in the aspect of environmental protection, the processing technology of plating (coating) coatings on the surfaces of PCBs needs to be re-developed, selected and evaluated by taking lead-free as a standard, and the hot air leveling process is not in accordance with the environmental protection requirement due to the use of Sn-Pb solder, and is expected to be eliminated by the "lead-free" era.
A copper surface protective agent, which is used in the field of Printed Circuit Boards (PCBs) for the first time, is also called Organic solder resist (OSP for short), can form a layer of Organic copper coordination polymer film on a to-be-welded bare copper surface of the PCB, the formed OSP film layer can protect the clean copper surface on the PCB from being oxidized and not easy to corrode under certain conditions, and before the electronic parts are assembled and welded, the OSP film can be quickly removed by using soldering flux or dilute acid, so that the exposed copper surface of the PCB and molten soldering tin form a firm welding point. The method is one of final surface treatment processes of the printed circuit board, and has the advantages of low cost, simple operation, environmental friendliness, capability of meeting the EU RoHS instruction, capability of meeting the requirements of the lead-free times and the like. With the development of the technology, the technology is more and more widely applied to the fields of PCBs, carrier plates, wafer packaging and other electronic industries.
The core of the OSP process formula is the prepared aqueous solution, and the solution can form a layer of hydrophobic organic protective film with the thickness of 0.2-0.5 mu m on the surface of copper through chemical reaction to play the roles of oxidation resistance and soldering assistance. At present, OSP suppliers adopt imidazole derivatives to dissolve in acidic aqueous solution, so that the imidazole derivatives act on a copper surface within a certain temperature and pH value range to generate an organic copper complex film, thereby playing a role in protection. Therefore, the OSP film-forming performance is good and bad, the OSP film-forming performance is greatly related to the imidazole type selected by an OSP aqueous solution, and surface treatment workers in various countries have long made a great deal of research work on the imidazole used by OSP to develop different imidazole derivatives to be applied to an OSP treatment process.
The main film forming material of the OSP copper surface protective agent is imidazole compound, which can be regarded as continuation and development of various pre-welding agents using rosin or active resin as formula raw material in the early period. Since the thermal resistance of the OSP film layer is mainly dependent on the main film forming material used, the development of the imidazole compound used in OSP determines the development process of OSP products, and there are almost five stages at present, as shown in the following chart: benzotriazole-alkyl imidazole-benzimidazole-alkyl benzimidazole alkyl aryl imidazole.
Starting from the fourth generation of OSP, the copper protectant is started with the addition of a suitable amount of an organic acid to promote the dissolution of the azole derivative. However, due to the evaporation of water and the increase of pH in the use process, the precipitation of crystals inevitably occurs, the processing of PCB is affected, and the service life of the copper protective agent is shortened. In addition, with the widespread use of lead-free soldering technology, the peak temperature of reflow soldering is increased, the residence time at higher temperature is also prolonged, the traditional OSP can not well protect the copper surface from oxidation any more, and the OSP film needs to further improve the heat-resistant soldering performance.
Based on the technical problems, the alkyl aryl imidazole compound of the fifth generation is used as a main film forming substance, and a proper amount of solubilizer is added to coordinate with copper to participate in the film forming process, so that the formed protective film has better compactness, and the oxidation resistance and the high temperature resistance are further improved.
The development process of the OSP copper surface protective agent is as follows
Disclosure of Invention
Aiming at the defects in the technology, the invention provides a copper surface protective agent used in the field of advanced wafer packaging and a preparation method thereof, and the invention provides the copper surface protective agent which replaces a lead-free hot air leveling process and has strong practicability and low cost, and the preparation method of the protective agent.
In order to achieve the purpose, the invention provides a copper surface protective agent for the field of advanced wafer packaging, which comprises the following components in percentage by mass:
0.1 to 5 percent of alkyl phenyl imidazole compound
0.01 to 0.3 percent of solubilizer
1 to 20 percent of organic acid
0.1 to 0.5 percent of metal compound
Deionized water: 5 to 85 percent.
Wherein, the alkyl phenyl imidazole compound is preferably: 2, 4-diphenyl-5-methylimidazole, 4-methyl-2, 5-diphenylimidazole, 2- (3',4' -dimethoxyphenyl) 4-phenyl-5-methylimidazole, 2-phenyl-4-benzylimidazole, 5-chloro-2-benzylbenzimidazole, 2- (3-chlorobenzyl) -benzimidazole, 2-methyl-4, 5-bibenzylimidazole, 2- (1-naphthyl) methyl-4-methylimidazole, 2-phenyl-4- (1-naphthyl) -5-methylimidazole, 2- (2-chlorophenyl) -4, 5-diphenylimidazole, 2-phenyl-4-methylimidazole, Any one or more of 2- (4-chlorophenyl) -4-methylimidazole, 2- (2, 4-dichlorophenylmethyl) -4, 5-diphenylimidazole, 2-benzyl-4- (2, 4-dichlorophenyl) -5-methylimidazole, and 2-benzyl-4- (3, 4-dichlorophenyl) -5-methylimidazole.
Wherein the organic acid is at least one of formic acid, acetic acid, propionic acid or lactic acid.
Wherein the solubilizer is one or two of acetone, glycol, ethanol, N-dimethylformamide and imidazopyridopyrazinone.
Wherein the metal compound is at least one of cupric nitrate, cupric sulfate, cupric phosphate, cupric chloride, cuprous chloride, cupric bromide, cuprous bromide, cupric iodide and cupric acetate.
In order to achieve the above object, the present invention further provides a method for preparing a copper surface protective agent for the field of advanced wafer packaging, which includes the following steps based on the copper surface protective agent:
step 1, weighing raw materials according to the components of the copper surface protective agent in the field of advanced wafer packaging of claim 1, dissolving organic acid and metal compounds into deionized water, and stirring to completely and uniformly dissolve the organic acid and the metal compounds to obtain a solution A;
step 2, adding the weighed imidazole compounds into the solution A, and stirring until the imidazole compounds are completely dissolved to obtain a solution B;
step 3, adding the weighed solubilizer into the solution B to obtain a solution C, and uniformly stirring to obtain a solution, namely the copper surface protective agent;
and 4, adding the pH regulator into the solution C and uniformly stirring to obtain a solution, namely the protective agent.
Wherein the pH regulator is at least one of ammonia water, sodium hydroxide, potassium hydroxide or organic amine, the addition amount of the pH regulator is 0.01-0.05% of the total mass of the solution C, and the pH value is 3-5.
The invention has the beneficial effects that: compared with the prior art, the copper surface protective agent for the advanced wafer packaging field and the preparation method thereof provided by the invention have the following advantages:
1) the working principle of the invention is as follows: the copper atom and N on four imidazole rings form coordination bonds to form a stable complex, and the stable complex is continuously extended and complexed by taking the stable complex as a unit, and the copper atom and the imidazole compound molecule are continuously complexed, so that the organic copper coordination polymer film is formed on the surface of bare copper.
2) The film thickness of the protective agent can be adjusted in various modes such as concentration, temperature and time, and the controllability is strong;
3) the use temperature is low, and the composite material can resist multiple high-temperature thermal shock;
4) the compatibility of the film layer and the soldering flux is strong;
5) the copper surface protective agent can deposit a layer of organic protective film on the copper surface of a wafer in a short time at a lower temperature of 40-50 ℃, can inhibit the oxidation corrosion of oxygen or other active substances in the air to the copper surface, has good moisture resistance and thermal stability, can resist thermal shock for more than three times in the assembly welding process, can be dissolved under the action of a soldering flux to expose a new copper surface, and can complete the welding process with molten solder.
Detailed Description
In order to more clearly describe the present invention, the present invention is further described below.
The invention provides a copper surface protective agent for the field of advanced wafer packaging, which comprises the following components in percentage by mass:
0.1 to 5 percent of alkyl phenyl imidazole compound
0.01 to 0.3 percent of solubilizer
1 to 20 percent of organic acid
0.1 to 0.5 percent of metal compound
Deionized water: 5 to 85 percent.
In this embodiment, the alkylphenylimidazole compound is preferably: 2, 4-diphenyl-5-methylimidazole, 4-methyl-2, 5-diphenylimidazole, 2- (3',4' -dimethoxyphenyl) 4-phenyl-5-methylimidazole, 2-phenyl-4-benzylimidazole, 5-chloro-2-benzylbenzimidazole, 2- (3-chlorobenzyl) -benzimidazole, 2-methyl-4, 5-bibenzylimidazole, 2- (1-naphthyl) methyl-4-methylimidazole, 2-phenyl-4- (1-naphthyl) -5-methylimidazole, 2- (2-chlorophenyl) -4, 5-diphenylimidazole, 2-phenyl-4-methylimidazole, Any one or more of 2- (4-chlorophenyl) -4-methylimidazole, 2- (2, 4-dichlorophenylmethyl) -4, 5-diphenylimidazole, 2-benzyl-4- (2, 4-dichlorophenyl) -5-methylimidazole, and 2-benzyl-4- (3, 4-dichlorophenyl) -5-methylimidazole.
In this embodiment, the organic acid is at least one of formic acid, acetic acid, propionic acid, or lactic acid.
In this embodiment, the solubilizer is one or two of acetone, ethylene glycol, ethanol, N-dimethylformamide, imidazopyridopyridazinone.
In this embodiment, the metal compound is at least one of copper nitrate, copper sulfate, copper phosphate, copper chloride, cuprous chloride, cupric bromide, cuprous bromide, cupric iodide, and cupric acetate.
In order to achieve the above object, the present invention further provides a method for preparing a copper surface protective agent for the field of advanced wafer packaging, which includes the following steps based on the copper surface protective agent:
step 1, weighing raw materials according to the components of the copper surface protective agent in the field of advanced wafer packaging of claim 1, dissolving organic acid and metal compounds into deionized water, and stirring to completely and uniformly dissolve the organic acid and the metal compounds to obtain a solution A;
step 2, adding the weighed imidazole compounds into the solution A, and stirring until the imidazole compounds are completely dissolved to obtain a solution B;
step 3, adding the weighed solubilizer into the solution B to obtain a solution C, and uniformly stirring to obtain a solution, namely the copper surface protective agent;
and 4, adding the pH regulator into the solution C and uniformly stirring to obtain a solution, namely the protective agent.
In this embodiment, the pH regulator is at least one of ammonia water, sodium hydroxide, potassium hydroxide or organic amines, the addition amount of the pH regulator is 0.01% to 0.05% of the total mass of the solution C, and the pH value is between 3 and 5. The invention has the beneficial effects that: compared with the prior art, the copper surface protective agent for the advanced wafer packaging field and the preparation method thereof provided by the invention have the following advantages:
1) the working principle of the invention is as follows: the copper atom and N on four imidazole rings form coordination bonds to form a stable complex, and the stable complex is continuously extended and complexed by taking the stable complex as a unit, and the copper atom and the imidazole compound molecule are continuously complexed, so that the organic copper coordination polymer film is formed on the surface of bare copper.
2) The film thickness of the protective agent can be adjusted in various modes such as concentration, temperature and time, and the controllability is strong;
3) the use temperature is low, and the composite material can resist multiple high-temperature thermal shock;
4) the compatibility of the film layer and the soldering flux is strong;
5) the copper surface protective agent can deposit a layer of organic protective film on the copper surface of a wafer in a short time at a lower temperature of 40-50 ℃, can inhibit the oxidation corrosion of oxygen or other active substances in the air to the copper surface, has good moisture resistance and thermal stability, can resist thermal shock for more than three times in the assembly welding process, can be dissolved under the action of a soldering flux to expose a new copper surface, and can complete the welding process with molten solder.
The OSP general process flow mainly comprises the steps of oil removal, microetching, acid cleaning, presoaking, OSP film forming, water washing, blow drying and the like.
Acid degreasing is the first step of the OSP process, and mainly removes grease, dirt and the like on the copper surface. The purpose of the micro-etching is to form a uniform and bright rough surface by etching the copper surface so as to facilitate film formation. Common microetching liquids include sulfuric acid/hydrogen peroxide systems, sodium persulfate systems, and the like. Generally, after sodium persulfate system microetching solution, one-step acid washing is carried out, namely, a copper plate is treated by 10% dilute sulfuric acid at room temperature for 1 minute, and the sulfuric acid and hydrogen peroxide system microetching solution can be free from the acid washing step. The presoaking is a step before OSP film forming treatment, and has the main functions of enabling OSP main liquid film forming to have selectivity, not depositing on a gold surface and preventing the gold surface from discoloring. OSP film forming is the main step in the whole process, a pretreated PCB is soaked in OSP main liquid, and an imidazole compound is matched with copper ions to form a film layer of an organic copper coordination polymer on a copper surface. The water wash step is performed throughout the entire OSP process, and a water wash is required after almost every step of the process. The cold air blow-drying is mainly used for preventing residual moisture from being brought into the OSP main liquid after water washing, so that the concentration imbalance of components in the OSP liquid is avoided; after OSP treatment of the PCB is finished, hot air drying is carried out, redundant moisture is removed for storage, and the OSP film layer is more compact.
The present invention will be specifically described below by way of examples; the starting materials used are all commercially available, unless otherwise stated.
Example 1
Raw material (g): film-forming agent: 2, 4-diphenyl-5-methylimidazole 6, organic acid: formic acid 20, solubilizer: imidazopyridopyrazinone 3, metal compound: copper chloride 2, deionized water 1000, pH adjuster: ammonia water.
The preparation method comprises the following steps:
1) weighing raw materials according to the components of the copper surface protective agent, dissolving organic acid and a metal compound into deionized water, and stirring to completely and uniformly dissolve the organic acid and the metal compound to obtain a solution A;
2) adding the weighed imidazole compounds into the solution A, and stirring until the imidazole compounds are completely dissolved to obtain a solution B;
3) adding the weighed solubilizer into the solution B to obtain a solution C, and uniformly stirring to obtain a solution, namely the copper surface protective agent;
4) and adding the pH regulator into the solution C, and uniformly stirring the solution C after the pH is between 3 and 5 to obtain a solution, namely the protective agent.
Example 2
Raw material (g): film-forming agent: 4-methyl-2, 5-diphenylimidazole 10, organic acid: acetic acid 10, propionic acid 5, solubilizer: imidazopyridopyrazinone 1, ethylene glycol 2, metal compound: copper nitrate 3, deionized water 1000, pH adjuster: ammonia water.
The preparation method is the same as example 1.
Example 3
Raw material (g): film-forming agent: 2- (3',4' -dimethoxyphenyl) 4-phenyl-5-methylimidazole 20, organic acid: propionic acid 5, lactic acid 10, solubilizer: imidazopyridopyrazinone 2, acetone 1, metal compounds: copper nitrate 3 deionized water 1000, pH adjuster: ammonia water.
The preparation method is the same as example 1.
Example 4
Raw material (g): film-forming agent: 2-benzyl-4- (2, 4-dichlorophenyl) -5-methylimidazole 20, organic acid: propionic acid 10, solubilizer: imidazopyridopyrazinone 2, acetone 1, metal compounds: copper acetate 1 deionized water 1000, pH adjuster: ammonia water.
The preparation method is the same as that of example 1
Example 5
Raw material (g): film-forming agent: 2-methyl-4, 5-bibenzylimidazole 25, organic acid: propionic acid 10, lactic acid 5, solubilizer: imidazopyridopyrazinone 2, N-dimethylformamide 1, metal compound: copper phosphate 1, deionized water 1000, pH adjuster: ammonia water.
The preparation method is the same as example 1.
Comparative example 1
Raw material (g): film-forming agent: 2-methyl-4, 5-bibenzylimidazole 25, organic acid: propionic acid 10, lactic acid 5, metal compound: copper phosphate 1, deionized water 1000, pH adjuster: ammonia water.
Comparative example 1 was conducted in the same manner as example 5 except that no solubilizer was added.
The preparation method is the same as that of example 1
Performance evaluation: the invention adopts copper-clad plates with the same specification as base materials, and after oil removal, microetching and presoaking, the copper-clad plates are put into the protective agent in the embodiment 1-5, and the soaking temperature and the soaking time are as follows: the film thickness formed on the base material is 0.3-0.4um after the film is dried by water washing and hot air drying at 40 ℃ for 60 s.
The specific performance evaluations are shown in the following table:
| sample (I) | Oxidation resistance | Thermal shock resistance | Stability at Low temperature | Stability at Normal temperature |
| Example 1 | No color change | 3 | No crystal precipitation | No crystal precipitation |
| Example 2 | No color change | 4 | A small amount of crystals precipitated | No crystal precipitation |
| Example 3 | No color change | 3 | No crystal precipitation | No crystal precipitation |
| Example 4 | No color change | 3 | No crystal precipitation | No crystal precipitation |
| Example 5 | No color change | 4 | No crystal precipitation | No crystal precipitation |
| Comparative example 1 | Color change | 2 | With crystal precipitation | With crystal precipitation |
From the above table, the following can be obtained:
1. oxidation resistance test
The treated samples of examples 1 to 5 and comparative example 1 were placed in a constant temperature and humidity chamber, the temperature was set at 65 ℃ and the humidity was set at 90%, and the sample was left for 7 days to observe whether or not the copper surface was oxidized and discolored. As can be seen from the table, the samples of examples 1 to 5 all exhibited no discoloration, but comparative example 1 exhibited discoloration, which indicates that the copper surface protective agent can inhibit the oxidative corrosion of the copper surface by oxygen or other active substances in the air, and has good moisture resistance and thermal stability.
2. The heat shock resistance of the composite material is improved,
the treated samples of examples 1-5 and comparative example 1 were placed in a muffle furnace, a PCB high-temperature reflow soldering environment was simulated, the temperature was set at 350 ℃, baking was carried out for 30s each time, the interval between two times was 10s, until the copper surface was oxidized and discolored, and the number of times was recorded. The copper surface protective agent is proved to be resistant to multiple high-temperature thermal shocks.
3. Stability test
Low temperature stability the samples of examples 1 to 5 and comparative example 1 after treatment were placed in an incubator at 3 ℃ for 7 days and the sample surface was observed for the presence of crystal precipitation.
And (3) normal temperature stability, namely standing the treated samples of examples 1 to 5 and comparative example 1 at normal temperature for 3 months, and observing whether crystals are precipitated on the surfaces of the samples. As can be seen from the above, the samples of examples 1 to 5 exhibited almost no crystal precipitation, whereas the comparative samples exhibited crystal precipitation, indicating that the copper surface protective agent of the present invention exhibited good moisture resistance and thermal stability.
The comparative examples show that the copper surface protective agent can deposit a layer of organic protective film on the copper surface of a wafer in a short time at a lower temperature of 40-50 ℃, can inhibit the oxidation corrosion of oxygen or other active substances in the air to the copper surface, has good moisture resistance and thermal stability, can resist thermal shock for more than three times in the assembly welding process, can be dissolved under the action of the soldering flux to expose a new copper surface, and can complete the welding process with molten solder.
The above disclosure is only an example of the present invention, but the present invention is not limited thereto, and any variations that can be made by those skilled in the art should fall within the scope of the present invention.
Claims (7)
1. A copper surface protective agent for the field of advanced wafer packaging is characterized by comprising the following components in percentage by mass:
0.1 to 5 percent of alkyl phenyl imidazole compound
0.01 to 0.3 percent of solubilizer
1 to 20 percent of organic acid
0.1 to 0.5 percent of metal compound
Deionized water: 5 to 85 percent.
2. The copper surface protective agent for the field of advanced wafer packaging as claimed in claim 1, wherein the alkyl phenyl imidazole compound is: 2, 4-diphenyl-5-methylimidazole, 4-methyl-2, 5-diphenylimidazole, 2- (3',4' -dimethoxyphenyl) 4-phenyl-5-methylimidazole, 2-phenyl-4-benzylimidazole, 5-chloro-2-benzylbenzimidazole, 2- (3-chlorobenzyl) -benzimidazole, 2-methyl-4, 5-bibenzylimidazole, 2- (1-naphthyl) methyl-4-methylimidazole, 2-phenyl-4- (1-naphthyl) -5-methylimidazole, 2- (2-chlorophenyl) -4, 5-diphenylimidazole, 2-phenyl-4-methylimidazole, Any one or more of 2- (4-chlorophenyl) -4-methylimidazole, 2- (2, 4-dichlorophenylmethyl) -4, 5-diphenylimidazole, 2-benzyl-4- (2, 4-dichlorophenyl) -5-methylimidazole, and 2-benzyl-4- (3, 4-dichlorophenyl) -5-methylimidazole.
3. The copper surface protective agent for the field of wafer advanced packaging as claimed in claim 1, wherein the organic acid is at least one of formic acid, acetic acid, propionic acid or lactic acid.
4. The copper surface protective agent for the field of advanced wafer packaging as claimed in claim 1, wherein the solubilizer is one or two of acetone, ethylene glycol, ethanol, N-dimethylformamide and imidazopyridopyrazinone.
5. The copper surface protective agent for the field of wafer advanced packaging as claimed in claim 1, wherein the metal compound is at least one of cupric nitrate, cupric sulfate, cupric phosphate, cupric chloride, cuprous chloride, cupric bromide, cuprous bromide, cupric iodide, and cupric acetate.
6. A method for preparing a copper surface protective agent used in the field of advanced wafer packaging, which is characterized in that the copper surface protective agent based on claim 1 comprises the following steps:
step 1, weighing raw materials according to the components of the copper surface protective agent in the field of advanced wafer packaging of claim 1, dissolving organic acid and metal compounds into deionized water, and stirring to completely and uniformly dissolve the organic acid and the metal compounds to obtain a solution A;
step 2, adding the weighed imidazole compounds into the solution A, and stirring until the imidazole compounds are completely dissolved to obtain a solution B;
step 3, adding the weighed solubilizer into the solution B to obtain a solution C;
and 4, adding the pH regulator into the solution C and uniformly stirring to obtain a solution, namely the protective agent.
7. The method for preparing the copper surface protective agent in the field of advanced wafer packaging as claimed in claim 6, wherein the pH regulator is at least one of ammonia water, sodium hydroxide, potassium hydroxide or organic amines, the addition amount of the pH regulator is 0.01-0.05% of the total mass of the solution C, and the pH value is 3-5.
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