CN111913346A - Photomask assembly and photoetching system - Google Patents
Photomask assembly and photoetching system Download PDFInfo
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- CN111913346A CN111913346A CN202010863609.7A CN202010863609A CN111913346A CN 111913346 A CN111913346 A CN 111913346A CN 202010863609 A CN202010863609 A CN 202010863609A CN 111913346 A CN111913346 A CN 111913346A
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- 238000001259 photo etching Methods 0.000 title abstract description 4
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 28
- 230000008569 process Effects 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 28
- 238000001459 lithography Methods 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 19
- 238000000576 coating method Methods 0.000 abstract description 19
- 239000000428 dust Substances 0.000 abstract description 18
- 230000007547 defect Effects 0.000 abstract description 12
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000009825 accumulation Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000011109 contamination Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 210000002489 tectorial membrane Anatomy 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- ODUCDPQEXGNKDN-UHFFFAOYSA-N Nitrogen oxide(NO) Natural products O=N ODUCDPQEXGNKDN-UHFFFAOYSA-N 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The embodiment of the application provides a photomask assembly and a photoetching system, the photomask assembly comprises a transparent container and a photomask arranged in the transparent container, the transparent container is used for isolating air from the photomask in the exposure process of the photomask, the transparent container is filled with ultra-clean water or ultra-clean air, so that a coating film is not required to be formed on the photomask, the process and the cost required for forming the coating film on the photomask are saved, meanwhile, the transparent container can isolate air from the photomask and dust in the air in the exposure process, and meanwhile, ultra-clean liquid or ultra-clean gas in the transparent container can play a role in purifying the surface of the photomask and gathering substances on the surface of tissues, so that the accumulation of impurities on the surface of the photomask can be reduced, and the exposure defects of the photomask are reduced.
Description
Technical Field
The present application relates to the field of lithography, and more particularly, to a photomask assembly and a lithography system.
Background
A photomask (photomask) is a precision, light-transmitting plate that contains a circuit layout on which a pattern in the photomask may be transferred to a printed circuit during a photolithography process. If dust or contaminant particles adhere to the photomask, the pattern of the dust or contaminant particles is also transferred to the printed circuit, which causes an additional component to be produced on the printed circuit, thereby causing an exposure defect of the photomask. In order to avoid such exposure defects, a coating (pellicle) is formed on the photomask so as to prevent the tiny dust (particle) in the environment or process from directly depositing on the surface of the photomask, however, the environmental and process requirements for forming the coating on the photomask are high, and the photomask with the coating still has the problem of exposure defects in some scenes.
Disclosure of Invention
In view of the above, an object of the present application is to provide a photomask assembly and a lithography system, which can reduce exposure defects of the photomask.
In order to achieve the purpose, the technical scheme is as follows:
an embodiment of the present application provides a photomask assembly, including:
a transparent container and a photomask arranged inside the transparent container; the transparent container is used for isolating the photomask from air in the exposure process of the photomask, and the transparent container is filled with ultra-clean liquid or ultra-clean gas.
Optionally, the ultra-clean liquid is ultra-clean water, and the ultra-clean gas is inert gas or nitrogen.
Optionally, the transparent container has a first opening and a second opening for introducing and discharging the ultra-clean liquid or the ultra-clean gas, respectively.
Optionally, the ultra-clean liquid or the ultra-clean gas may be circulated through the first opening and the second opening during the exposure of the photomask.
Optionally, the first opening and the second opening are disposed on two opposite surfaces.
Optionally, the transparent container has at least two parallel planes, and the photomask is disposed in the transparent container parallel to the parallel planes.
Optionally, the transparent container is a prism structure.
Optionally, when the photomask is arranged in the transparent container, the distance between the two parallel planes and the pattern layer of the photomask is greater than or equal to 3 mm.
An embodiment of the present application further provides a lithography system, including: an exposure light source and the photomask assembly.
Optionally, the exposure light source is an ultraviolet light source, a deep ultraviolet light source, or an extreme ultraviolet light source.
The embodiment of the application provides a photomask assembly and a photoetching system, which comprises a transparent container and a photomask arranged in the transparent container, wherein the transparent container is used for isolating air for the photomask in the exposure process of the photomask, and the transparent container is filled with ultra-clean water or ultra-clean air, so that a coating film is not required to be formed on the photomask, the process and the cost required for forming the coating film on the photomask are saved, meanwhile, the transparent container can isolate air for the photomask in the exposure process, and dust in the air, and meanwhile, ultra-clean liquid or ultra-clean gas in the transparent container can play a role in purifying the surface of the photomask and gathering substances on the surface of tissues, so that the accumulation of impurities on the surface of the photomask can be reduced, and the exposure defect of the photomask is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a photomask assembly according to the prior art;
FIG. 2 is a schematic diagram of a lithography system according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a photomask assembly according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram of a photolithography process according to an embodiment of the present disclosure.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited by the specific embodiments disclosed below.
Next, the present application will be described in detail with reference to the drawings, and in the detailed description of the embodiments of the present application, the cross-sectional views illustrating the structure of the device are not enlarged partially according to the general scale for convenience of illustration, and the drawings are only examples, which should not limit the scope of the protection of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
As described in the background, if dust or contamination particles adhere to the photomask, it is easy to cause the pattern of the dust or contamination particles to be transferred to the printed circuit at the same time, which causes additional components of the printed circuit, resulting in exposure defects of the photomask.
In order to avoid such exposure defects, a coating film 102 is formed on the photomask 101 so as to prevent the tiny dust in the environment or the manufacturing process from directly depositing on the surface of the photomask 101, and a frame 103 may be included between the photomask 101 and the coating film 102, as shown in fig. 1, which is a schematic structural diagram of a photomask assembly in the prior art. However, the environmental and process requirements for forming a coating film on a photomask are high, and it is necessary to attach the coating film immediately after cleaning the photomask to prevent the patterned surface of the photomask from being contaminated with dust, and at the same time, in order to prevent dust from being trapped in a closed space between the coating film and the photomask during attachment of the coating film, the environment for attaching the coating film must be kept extremely clean, and a manual procedure requires high specification. Further, if any dust is found to be present between the pellicle and the photomask after the pellicle is applied, the pellicle must be removed, and the photomask must be re-cleaned, re-coated, and re-inspected, which inevitably requires a large amount of labor and cost.
Of course, in a scenario where a photomask is protected with a pellicle, even if there is no dust between the pellicle and the photomask, the photomask with the pellicle formed thereon still has a problem of exposure defects in some scenarios. This is because, in the cleaning process of the photomask, a cleaning liquid tends to leave a trace amount of a compound such as Nitrogen Oxide (NO) on the surface of the photomask, or a trace amount of a compound in the atmospheric environment is sealed in a closed space between the coating film and the photomask in the process of film attachmentx) Sulfur Oxide (SO)x) Or ammonium ion (NH)+) And so on, in the course of exposure of the photomask one time, these trace compounds react and polymerize to gradually form a thin film contamination layer (HAZE) which unevenly covers the surface of the photomask, thereby causing exposure defects of the photomask.
Based on the technical problems, the embodiment of the application provides a photomask assembly and a lithography system, which comprises a transparent container and a photomask arranged in the transparent container, wherein the transparent container is used for isolating air from the photomask in the exposure process of the photomask, and the transparent container is filled with ultra-clean water or ultra-clean air, so that a coating film is not required to be formed on the photomask, the process and the cost required for forming the coating film on the photomask are saved, meanwhile, the transparent container can isolate air from the photomask and dust in the air in the exposure process, and meanwhile, the ultra-clean liquid or the ultra-clean gas in the transparent container can play a role in purifying the surface of the photomask and inhibiting the aggregation of surface substances, so that the accumulation and generation of impurities on the surface of the photomask can be reduced, and the exposure defects of the photomask are reduced.
For better understanding of the technical solutions and effects of the present application, the following detailed description will be made of specific embodiments with reference to the accompanying drawings.
Referring to fig. 2, a schematic diagram of a lithography system according to an embodiment of the present disclosure is shown, wherein the lithography system may include an exposure light source 200 and a photomask assembly 100.
Wherein exposure light source 200 may emit a light beam for performing photolithography in conjunction with photomask assembly 100. The exposure light source 200 may be an ultraviolet light source (UV), such as a high-pressure mercury lamp, which can provide light with a wavelength of 436nm or 365nm, a deep ultraviolet light source (DUV), such as KrF (krypton fluoride) excimer Laser (248nm), ArF (argon fluoride) excimer Laser (193nm), and F2 (fluorine gas) excimer Laser (157nm), an extreme ultraviolet light source (LPP-EUV), such as a Laser-produced Plasma (LPP-EUV), or the like.
A lens 400, a filter, and the like may be further provided between the exposure light source 200 and the photomask assembly 100, and a lens 500 may be further provided between the photomask assembly 100 and the semiconductor device 300 to change the direction of the light beam.
Referring to fig. 3, a schematic structural diagram of a photomask assembly 100 according to an embodiment of the present disclosure is shown, wherein the photomask assembly 100 may include a transparent container 120 and a photomask 101 disposed inside the transparent container 120.
The photomask 101 is a precision light-transmitting plate made of, for example, glass, quartz or CF2The circuit layout may be an opaque material, such as chrome, on the circuit layout. If the photomask 101 is, for example, a phase-shifting photomask (phase-shifting layer), a phase-shifting layer may be further included under the chrome layer. In particular, the phase transfer layer may include transition metal elements, lanthanides, and combinations thereof, such as Mo, Zr, Ta, Cr, or Hf.
During photolithography, the pattern in the photomask 101 may be transferred into a printed circuit. In the photolithography process, the photomask 101 is irradiated by an exposure light source, which easily causes a reaction of a trace amount of compounds on the surface of the photomask 101 to generate a thin film contamination layer. This is because a minute amount of compounds in the air or a minute amount of compounds in the cleaning liquid easily settle on the surface of the photomask 101 and easily react when exposed to high-energy light such as high-energy ultraviolet light, deep ultraviolet light, and extreme ultraviolet light in a humid environment, and therefore, the growth of a thin film contamination layer is promoted every time the photomask 101 is exposed to an exposure light source, resulting in a shortened lifetime of the photomask 101.
Therefore, the transparent container 120 may be provided for the photomask 101, the photomask 101 may be provided inside the transparent container 120, the transparent container 120 may insulate the photomask 101 from air during the exposure process of the photomask 101, and the transparent container 120 may be filled with ultra-clean liquid or ultra-clean gas. Wherein, the ultra-clean liquid can be ultra-clean water (UPW), and the ultra-clean gas can be inert gas or nitrogen. The ultra-clean liquid or the ultra-clean gas may directly contact the photomask 101, thereby isolating the photomask 101 from air and dust in the air, and simultaneously not containing water vapor and oxygen which are beneficial to a thin film contamination layer, thereby extending the lifetime of the photomask 101 to some extent. In the embodiment of the present application, the ultra-clean liquid or the ultra-clean gas may serve to isolate the photomask 101 from air, and thus, a coating film does not need to be formed on the photomask 101, thereby saving labor and cost required for forming the coating film.
In the embodiment of the present application, the transparent container 120 may have a first opening 121 and a second opening 122, one of the first opening 121 and the second opening 122 is an inlet, and the other is an outlet. Specifically, the first opening 121 may be a gas inlet for introducing ultra-clean gas into the transparent container 120, and the second opening 122 may be a gas outlet for exhausting ultra-clean gas from the transparent container 120, so that the ultra-clean gas may circulate through the first opening 121 and the second opening 122; the first opening 121 may be a water inlet for introducing ultra-clean liquid into the transparent container 120, and the second opening 122 may be a water outlet for discharging ultra-clean liquid from the transparent container 120, so that the ultra-clean liquid can circulate through the first opening 121 and the second opening 122. The ultra-clean gas or the ultra-clean liquid can purify trace compounds on the surface of the photomask 101 in the circulating process, so that the generation of a thin film pollution layer can be avoided while the trace compounds in the atmospheric environment are prevented from being adhered to the surface of the photomask 101, and the service life of the photomask 101 is prolonged.
Certainly, in the exposure process and the storage process of the photomask 101, the ultra-clean gas or the ultra-clean liquid may circulate or may remain static without circulating, and when the ultra-clean gas or the ultra-clean liquid remains static, the ultra-clean gas or the ultra-clean liquid still can prevent trace compounds in the atmospheric environment from adhering to the surface of the photomask 101, and simultaneously, the ultra-clean gas or the ultra-clean liquid can prevent the reaction of the trace compounds, thereby preventing the generation of a thin film contamination layer.
In the embodiment of the present application, the material of the transparent container 120 may be any material, and may be, for example, glass or other transparent organic or inorganic material. The transparent container 20 may have at least two parallel planes, which are parallel to the photo mask 101 when the photo mask 101 is disposed in the transparent container 120. This can reduce the influence of the refractive index generated by the transparent container 120 on the exposure. For example, the transparent container 120 may be a prism structure made of glass, and the transparent container 120 may be a transparent glass box (Pod/Cartrige).
The first opening 121 and the second opening 122 of the transparent container 120 may be arbitrarily disposed as long as circulation of ultra-clean gas or ultra-clean liquid is achieved. As a possible embodiment, the first opening 121 and the second opening 122 may be disposed on opposite surfaces of the transparent container 120 such that the first opening 121 and the second opening 122 have a large distance, facilitating effective circulation of ultra-clean gas or ultra-clean liquid. When the transparent container 120 is a prism, the first and second openings 121 and 122 may be disposed in a plane of the prism which is not parallel to the photomask 101, and planes parallel to the photomask 101 are used as a bottom surface and a top surface, and the first and second openings 121 and 122 may be disposed on side surfaces of the prism.
In the embodiment of the present application, the thickness of the material of the transparent container 120 may be small, and the size of the transparent container 120 in the direction perpendicular to the surface of the photomask 101 may be large, so that the distance between the surface of the transparent container 120 and the pattern layer of the photomask 101 may be controlled, and even if dust adheres to the outer surface of the transparent container 120, the pattern of the dust may not be easily transferred to the printed circuit due to the fact that the distance from the photomask 101 is large. Referring to fig. 4, a schematic diagram of a photolithography process provided in an embodiment of the present application is shown, in which a pattern of a pattern layer of a photomask 101 is focused on a surface of a semiconductor device 300, and dust (black circular particles) on a surface of a transparent container 120 is focused under the semiconductor device 300 and thus is not transferred onto the semiconductor device 300.
Specifically, when the photomask 101 is disposed in the transparent container 120, the distance between the pattern layer of the photomask 101 and the surface of the transparent container 120 parallel to the pattern layer may be greater than or equal to 3mm, and when the photomask 101 may be disposed in the middle of the transparent container 120, the size of the transparent container 120 in the direction perpendicular to the surface of the photomask 101 may be greater than 6 mm. Specifically, the distance between the pattern layer of the photomask 101 and the surface of the transparent container 120 parallel to the pattern layer may be in the range of 3 to 5mm or other suitable distance, and the size of the transparent container 120 in the direction perpendicular to the surface of the photomask 101 may be in the range of 6 to 10mm or other suitable distance. A member for fixing the photomask 101 may be formed on a sidewall of the transparent container 120.
The embodiment of the application provides a photomask assembly, including the inside photomask that sets up of transparent container and transparent container, transparent container is used for keeping apart the air for the photomask in the exposure process of photomask, it has super clean water or super clean air to fill in the transparent container, need not to form the tectorial membrane on the photomask like this, the required technology and the cost of formation tectorial membrane on the photomask have been saved, transparent container can keep apart the air for the photomask in the exposure process simultaneously, and the dust in the air, super clean liquid or super clean gas in the transparent container can play the purification effect and the effect of tissue surface material gathering to the photomask surface simultaneously, consequently can reduce the impurity of photomask surface and pile up, reduce the exposure defect of photomask.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, embodiments of the lithography system may be described with relative ease as they are substantially similar to embodiments of the photomask assembly, and reference may be made to some descriptions of embodiments of the photomask assembly for related purposes.
The foregoing is merely a preferred embodiment of the present application and, although the present application discloses the foregoing preferred embodiments, the present application is not limited thereto. Those skilled in the art can now make numerous possible variations and modifications to the disclosed embodiments, or modify equivalent embodiments, using the methods and techniques disclosed above, without departing from the scope of the claimed embodiments. Therefore, any simple modification, equivalent change and modification made to the above embodiments according to the technical essence of the present application still fall within the protection scope of the technical solution of the present application without departing from the content of the technical solution of the present application.
Claims (10)
1. A photomask assembly, comprising:
a transparent container and a photomask arranged inside the transparent container; the transparent container is used for isolating the photomask from air in the exposure process of the photomask, and the transparent container is filled with ultra-clean liquid or ultra-clean gas.
2. The assembly of claim 1, wherein the ultra clean liquid is ultra clean water and the ultra clean gas is an inert gas or nitrogen.
3. The assembly of claim 2, wherein the transparent container has a first opening and a second opening for respectively passing and discharging the ultra clean liquid or the ultra clean gas.
4. The assembly of claim 3, wherein the ultra-clean liquid or the ultra-clean gas is circulated through the first opening and the second opening during the exposure of the photomask.
5. The assembly of claim 3, wherein the first opening and the second opening are disposed on opposing surfaces.
6. The assembly of any of claims 1-5, wherein the transparent container has at least two parallel planes, and wherein the photomask is disposed in the transparent container parallel to the parallel planes.
7. The assembly of claim 6, wherein the transparent container is a prismatic structure.
8. The assembly of claim 6, wherein the photomask has a graphics layer that is spaced from the two parallel planes by a distance greater than or equal to 3mm when the photomask is disposed in the transparent container.
9. A lithography system, comprising: an exposure light source and a photomask assembly of any of claims 1-8.
10. The lithography system of claim 9, wherein said exposure light source is an ultraviolet light source, a deep ultraviolet light source, or an extreme ultraviolet light source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010863609.7A CN111913346A (en) | 2020-08-25 | 2020-08-25 | Photomask assembly and photoetching system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010863609.7A CN111913346A (en) | 2020-08-25 | 2020-08-25 | Photomask assembly and photoetching system |
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| CN111913346A true CN111913346A (en) | 2020-11-10 |
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| CN202010863609.7A Pending CN111913346A (en) | 2020-08-25 | 2020-08-25 | Photomask assembly and photoetching system |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230176472A1 (en) * | 2021-12-08 | 2023-06-08 | Chi-Chung Chen | Lithographic method by using a photomask contained in a transparent pod |
| NL2033683A (en) * | 2021-12-08 | 2023-06-22 | Chi Chung Chen | Method for inspecting a photomask contained in a transparent pod |
| NL2033684A (en) * | 2021-12-08 | 2023-06-22 | Chi Chung Chen | Pod for containing a photomask |
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| US6593034B1 (en) * | 1999-11-08 | 2003-07-15 | Shin-Etsu Chemical Co., Ltd. | Framed pellicle for protection of photolithographic photomask |
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2020
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| JPH09197652A (en) * | 1996-01-19 | 1997-07-31 | Nec Corp | Pellicle and photomask with pellicle |
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| US6593034B1 (en) * | 1999-11-08 | 2003-07-15 | Shin-Etsu Chemical Co., Ltd. | Framed pellicle for protection of photolithographic photomask |
| JP2002299220A (en) * | 2001-04-02 | 2002-10-11 | Semiconductor Leading Edge Technologies Inc | Photomask container, photomask unit, photomask device, projection aligner and projection exposing method |
Cited By (4)
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| US20230176472A1 (en) * | 2021-12-08 | 2023-06-08 | Chi-Chung Chen | Lithographic method by using a photomask contained in a transparent pod |
| NL2033682A (en) * | 2021-12-08 | 2023-06-22 | Chi Chung Chen | Lithographic method by using a photomask contained in a transparent pod |
| NL2033683A (en) * | 2021-12-08 | 2023-06-22 | Chi Chung Chen | Method for inspecting a photomask contained in a transparent pod |
| NL2033684A (en) * | 2021-12-08 | 2023-06-22 | Chi Chung Chen | Pod for containing a photomask |
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