CN111909797A - Cleaning agent for hard and brittle material wafer - Google Patents
Cleaning agent for hard and brittle material wafer Download PDFInfo
- Publication number
- CN111909797A CN111909797A CN202010900911.5A CN202010900911A CN111909797A CN 111909797 A CN111909797 A CN 111909797A CN 202010900911 A CN202010900911 A CN 202010900911A CN 111909797 A CN111909797 A CN 111909797A
- Authority
- CN
- China
- Prior art keywords
- hard
- agent
- cleaning agent
- brittle material
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 54
- 239000000463 material Substances 0.000 title claims abstract description 38
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 18
- 239000008367 deionised water Substances 0.000 claims abstract description 13
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 13
- 239000003513 alkali Substances 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 239000006184 cosolvent Substances 0.000 claims abstract description 6
- 239000004094 surface-active agent Substances 0.000 claims abstract description 6
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 5
- 239000002738 chelating agent Substances 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims description 32
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 12
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 10
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 10
- 229920000570 polyether Polymers 0.000 claims description 10
- -1 dioctyl mono-sodium sulfosuccinate Chemical compound 0.000 claims description 8
- VBICKXHEKHSIBG-UHFFFAOYSA-N 1-monostearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(O)CO VBICKXHEKHSIBG-UHFFFAOYSA-N 0.000 claims description 6
- KEZYHIPQRGTUDU-UHFFFAOYSA-N 2-[dithiocarboxy(methyl)amino]acetic acid Chemical compound SC(=S)N(C)CC(O)=O KEZYHIPQRGTUDU-UHFFFAOYSA-N 0.000 claims description 6
- YPIFGDQKSSMYHQ-UHFFFAOYSA-N 7,7-dimethyloctanoic acid Chemical compound CC(C)(C)CCCCCC(O)=O YPIFGDQKSSMYHQ-UHFFFAOYSA-N 0.000 claims description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 6
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 6
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 claims description 6
- 235000019982 sodium hexametaphosphate Nutrition 0.000 claims description 6
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 claims description 6
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 6
- 229920002554 vinyl polymer Polymers 0.000 claims description 6
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims description 5
- 229920002503 polyoxyethylene-polyoxypropylene Polymers 0.000 claims description 5
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 4
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 claims description 4
- CBTVGIZVANVGBH-UHFFFAOYSA-N aminomethyl propanol Chemical compound CC(C)(N)CO CBTVGIZVANVGBH-UHFFFAOYSA-N 0.000 claims description 4
- 150000002191 fatty alcohols Chemical class 0.000 claims description 4
- 229930182470 glycoside Natural products 0.000 claims description 4
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 4
- DCXXMTOCNZCJGO-UHFFFAOYSA-N tristearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(OC(=O)CCCCCCCCCCCCCCCCC)COC(=O)CCCCCCCCCCCCCCCCC DCXXMTOCNZCJGO-UHFFFAOYSA-N 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 150000007530 organic bases Chemical class 0.000 claims description 3
- KVCGISUBCHHTDD-UHFFFAOYSA-M sodium;4-methylbenzenesulfonate Chemical compound [Na+].CC1=CC=C(S([O-])(=O)=O)C=C1 KVCGISUBCHHTDD-UHFFFAOYSA-M 0.000 claims description 3
- 229940037312 stearamide Drugs 0.000 claims description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 2
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 2
- 239000008139 complexing agent Substances 0.000 claims description 2
- 229920001577 copolymer Polymers 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims description 2
- 239000012895 dilution Substances 0.000 claims description 2
- YQEMORVAKMFKLG-UHFFFAOYSA-N glycerine monostearate Natural products CCCCCCCCCCCCCCCCCC(=O)OC(CO)CO YQEMORVAKMFKLG-UHFFFAOYSA-N 0.000 claims description 2
- SVUQHVRAGMNPLW-UHFFFAOYSA-N glycerol monostearate Natural products CCCCCCCCCCCCCCCCC(=O)OCC(O)CO SVUQHVRAGMNPLW-UHFFFAOYSA-N 0.000 claims description 2
- 229920001519 homopolymer Polymers 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 229940113115 polyethylene glycol 200 Drugs 0.000 claims description 2
- 229940068918 polyethylene glycol 400 Drugs 0.000 claims description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims 2
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims 1
- 239000002736 nonionic surfactant Substances 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 23
- 239000003344 environmental pollutant Substances 0.000 abstract description 9
- 231100000719 pollutant Toxicity 0.000 abstract description 9
- 238000012545 processing Methods 0.000 abstract description 7
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 239000000654 additive Substances 0.000 abstract description 2
- 239000002689 soil Substances 0.000 abstract 1
- 239000002351 wastewater Substances 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 10
- 239000010980 sapphire Substances 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 210000003298 dental enamel Anatomy 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- LYRFLYHAGKPMFH-UHFFFAOYSA-N octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(N)=O LYRFLYHAGKPMFH-UHFFFAOYSA-N 0.000 description 4
- 239000012855 volatile organic compound Substances 0.000 description 4
- 230000003749 cleanliness Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- RCIJACVHOIKRAP-UHFFFAOYSA-M sodium;1,4-dioctoxy-1,4-dioxobutane-2-sulfonate Chemical compound [Na+].CCCCCCCCOC(=O)CC(S([O-])(=O)=O)C(=O)OCCCCCCCC RCIJACVHOIKRAP-UHFFFAOYSA-M 0.000 description 3
- 210000004243 sweat Anatomy 0.000 description 3
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000001680 brushing effect Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical class [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- XUJLWPFSUCHPQL-UHFFFAOYSA-N 11-methyldodecan-1-ol Chemical compound CC(C)CCCCCCCCCCO XUJLWPFSUCHPQL-UHFFFAOYSA-N 0.000 description 1
- ATVJXMYDOSMEPO-UHFFFAOYSA-N 3-prop-2-enoxyprop-1-ene Chemical compound C=CCOCC=C ATVJXMYDOSMEPO-UHFFFAOYSA-N 0.000 description 1
- HMNZAQXKDNDULC-UHFFFAOYSA-N COS(=O)(=O)C=CC1=CC=CC=C1.[Na] Chemical compound COS(=O)(=O)C=CC1=CC=CC=C1.[Na] HMNZAQXKDNDULC-UHFFFAOYSA-N 0.000 description 1
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229940093476 ethylene glycol Drugs 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 231100001261 hazardous Toxicity 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004526 silane-modified polyether Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- GOLXNESZZPUPJE-UHFFFAOYSA-N spiromesifen Chemical compound CC1=CC(C)=CC(C)=C1C(C(O1)=O)=C(OC(=O)CC(C)(C)C)C11CCCC1 GOLXNESZZPUPJE-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 239000013008 thixotropic agent Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/722—Ethers of polyoxyalkylene glycols having mixed oxyalkylene groups; Polyalkoxylated fatty alcohols or polyalkoxylated alkylaryl alcohols with mixed oxyalkylele groups
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/044—Hydroxides or bases
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/06—Phosphates, including polyphosphates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/08—Silicates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2006—Monohydric alcohols
- C11D3/201—Monohydric alcohols linear
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2075—Carboxylic acids-salts thereof
- C11D3/2079—Monocarboxylic acids-salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2093—Esters; Carbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/22—Carbohydrates or derivatives thereof
- C11D3/222—Natural or synthetic polysaccharides, e.g. cellulose, starch, gum, alginic acid or cyclodextrin
- C11D3/225—Natural or synthetic polysaccharides, e.g. cellulose, starch, gum, alginic acid or cyclodextrin etherified, e.g. CMC
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/30—Amines; Substituted amines ; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/32—Amides; Substituted amides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/34—Organic compounds containing sulfur
- C11D3/3472—Organic compounds containing sulfur additionally containing -COOH groups or derivatives thereof
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3707—Polyethers, e.g. polyalkyleneoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3703—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/373—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds containing silicones
- C11D3/3738—Alkoxylated silicones
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
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- Chemical & Material Sciences (AREA)
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Abstract
The invention discloses a cleaning agent for a hard and brittle material wafer, and relates to the technical field of cleaning in the electronic industry. The invention discloses a cleaning agent for a hard and brittle material wafer, which consists of the following components in percentage by weight: 5-10% of inorganic alkali, 5-10% of organic alkali, 5-10% of surfactant, 3-5% of cosolvent, 1-5% of solubilizer, 1-5% of chelating agent, 2-5% of anti-redeposition agent, 0.5-1% of defoaming agent and the balance of deionized water. The cleaning agent for the hard and brittle material wafer provided by the invention has good compatibility with pollutants, is safe to operate, stable in performance, high in cleaning efficiency and long in service cycle, and can effectively improve the processing efficiency. The additives used in the formula of the invention all meet the electronic grade cleaning requirement, and the wastewater formula standard specified by the national environmental protection regulations does not pollute water quality and soil, and is environment-friendly.
Description
Technical Field
The invention belongs to the technical field of industrial cleaning, and particularly relates to a cleaning agent used in the process of processing and cleaning hard and brittle materials such as 3D glass, sapphire, ceramics, semiconductor components and the like.
Background
With the trend of refinement and miniaturization of the manufacturing industry, the photoelectric products are rapidly developed towards miniaturization, high density and high reliability, and the requirements on the processing process and the processing mode are more and more strict. The crystal is processed by various cutting, grinding, polishing and other processing techniques to become the most basic wafer. Each process can produce various pollutants such as solid powder, oil stain, sweat stain, fatty metal ions and the like. If these contaminants are not removed in time, the process is not performed smoothly or the quality and reliability of the product are affected.
The sapphire as one of the hard and brittle materials has the main component of aluminum oxide, has the Mohs hardness of 9 grades which is second to that of diamond, has stable chemical property, high resistivity and high dielectric property, and can be used as an infrared window material and an optical element for experiments. In the semiconductor field, sapphire single crystal becomes the main substrate material of GaN-based photoelectric devices, and for this example, the cleanliness of the surface of sapphire single crystal has a great influence on the service life of the photoelectric devices, the surface roughness is increased by particles on the surface, the generation probability of dislocation and defects is increased during the growth of an epitaxial film, and the breakdown voltage is reduced, the electric leakage is caused by charged particles such as metal ions attached to the surface, and the finished devices are discarded. Therefore, the improvement of the cleanliness of the sapphire surface has important significance for improving the application value of the sapphire surface.
The silicon wafer, one of the hard and brittle materials, is a key part for forming the solar cell, and the surface state and the pollutant removal degree of the silicon wafer directly influence the performances of the finished solar cell, such as power generation efficiency, open-circuit voltage, short-circuit current, service life and the like. The pollutants of the solar silicon wafer mainly come from external media contacting with the silicon wafer in the silicon wafer cutting process, and mainly comprise cutting liquid, lubricating oil, skin grease of a human body, a natural oxidation layer, silicon carbide powder, silicon powder, dust and the like. The cleanliness of the cleaning will directly affect the power generation efficiency of the battery.
In addition, the residues on the semiconductor parts and the circuit boards are mainly residues of electronic soldering auxiliary materials such as solder paste and flux, and contaminants such as hand sweat, finger prints, and fibers and dust falling in the air during handling, and these substances are complex in composition, contain various water-insoluble components such as resins, activators, thixotropic agents, and thickeners, and also contain anions, cations, and weak organic acids. The unclean cleaning of these substances will have a great influence on the quality and performance of the product, and therefore the quality and reliability of the product are determined by the cleaning agent and the cleaning process.
With the rapid development of hard and brittle materials of semiconductors, a wide market of cleaning agents for hard and brittle materials is promoted. But the technical level is lagged, so that the special cleaning agent for the processing process of the semiconductor hard and brittle materials, which can meet the requirements of product quality standards and meet the requirements of environmental protection regulations, is scarce in the domestic market at present.
In recent years, people's living standard is improved, environmental awareness is increased, and cleaning agents containing ODS, VOCs and the like which are harmful to the environment and harmful to the body are gradually prohibited from being produced and used. Thus, industrial cleaning is gradually moving away from toxic and hazardous solvents to semi-aqueous, aqueous or VOC-free or low VOC content solvents. The invention aims to provide a fully-synthetic water-based cleaning agent which can meet the requirements of cleaning after cutting and polishing of hard and brittle materials such as sapphire and silicon wafers, and mainly comprises inorganic base, organic base, chelating agent, surfactant, cosolvent and the like.
Disclosure of Invention
The invention aims to provide a cleaning agent for a hard and brittle material wafer, which has good compatibility with pollutants, safe operation, no combustion and explosion, and wide cleaning field, can adjust the formula aiming at pollutants with different properties, and has better cleaning effect on polar and nonpolar pollutants by matching with physical cleaning means such as heating, brushing, spray injection, ultrasonic cleaning and the like.
In order to realize the purpose of the invention, the invention provides a cleaning agent for a hard and brittle material wafer, which consists of the following components in percentage by weight: 5-10% of inorganic alkali, 5-10% of organic alkali, 5-10% of surfactant, 3-5% of cosolvent, 1-5% of solubilizer, 1-5% of chelating agent, 2-5% of anti-redeposition agent, 0.5-1% of defoaming agent and the balance of deionized water.
Further, the inorganic alkali is one or two of sodium hydroxide, potassium hydroxide and sodium metasilicate pentahydrate.
Further, the organic base is one or more of diglycolamine, triethanolamine and AMP 95.
Further, the surfactant is one or more of narrow-distribution fatty alcohol-polyoxyethylene ether, isomeric tridecanol polyoxyethylene ether and fatty alcohol-polyoxyethylene polyoxypropylene ether.
Further, the cosolvent is one or more of dipropylene glycol dimethyl ether, diethylene glycol monobutyl ether and ethylene glycol.
Further, the complexing agent is one or more of aminotrimethylene phosphonic acid, sodium tripolyphosphate, sodium hexametaphosphate and ethylene diamine tetraacetic acid (EDTA-2 Na).
Further, the solubilizer is one or two of citric acid, neodecanoic acid, dioctyl sulfosuccinate monosodium salt, C8-10 alkyl glycoside and sodium p-toluenesulfonate.
Further, the anti-redeposition agent is one or more of acrylic acid homopolymer, acrylic acid/maleic acid copolymer, polyethylene glycol 200, polyethylene glycol 400, vinyl bis stearamide, glycerol monostearate and glycerol tristearate.
Further, the defoaming agent is one of polyether defoaming agent, organic silicon defoaming agent and polyether modified organic silicon defoaming agent.
The use method of the cleaning agent for the hard and brittle material wafer is characterized in that the cleaning agent is diluted by water according to the proportion of 1:10-1:20, and the pH value of the diluted cleaning agent is 9-13.
The invention achieves the following beneficial effects:
1. when the hard and brittle material wafer cleaning agent is used, the cleaning agent is directly added into water according to a proportion and is uniformly stirred for use. The cleaning agent is fast dissolved in water, and has no energy absorption or release, no gas release and no unacceptable smell in the dissolving process. The cleaning ability is strong, and the cleaning range is wide, can adjust dilution ratio according to the pollution condition of different degree to the dirt of different kinds such as solid particle, sweat stain, grease, acid, reaches the washing requirement.
2. The invention can not generate chemical corrosion, burn and the like to the cleaned object in the using process, and can effectively remove stubborn dirt attached on the surface and in the clearance.
3. The invention has strong cleaning power and long service life, and can clean 2000 and 2500 pieces of sapphire wafers by single liquid preparation for example of sapphire cleaning. The cleaned surface has good retentivity, is not easy to attach and adsorb dust in the air, and is far away from secondary pollution.
4. The cleaning effluent can be discharged through simple neutralization treatment, and does not contain substances which forbid addition and pollute water environment and VOC, so that the trouble of post treatment of waste materials is reduced.
5. The cleaning agent is suitable for various working conditions such as heating, brushing, spraying, ultrasonic cleaning and the like, and can be prepared and used according to actual operation conditions.
6. The cleaning agent does not contain VOC solvent and additives causing secondary pollution, has good compatibility with pollutants, is safe to operate, is non-combustible and non-explosive, and has good cleaning effect on polar and non-polar pollutants.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The cleaning agent for hard and brittle material wafers according to the present invention will be described with reference to specific examples.
Example 1
A cleaning agent for a hard and brittle material wafer comprises the following components in percentage by weight: 66.5% of deionized water, 10% of potassium hydroxide, 5% of triethanolamine, 5% of fatty alcohol-polyoxyethylene ether, 3% of ethylene glycol, 5% of neodecanoic acid, 2% of EDTA-2Na, 3% of stearic acid monoglyceride and 0.5% of polyether modified defoaming agent.
The components by weight percentage are as follows: and (2) adding the deionized water in the proportion into an enamel blending kettle, starting stirring, slowly adding the potassium hydroxide and the triethanolamine in the proportion into the reaction kettle, sequentially adding the EDTA-2Na, the fatty alcohol polyoxyethylene ether, the stearic acid monoglyceride, the neodecanoic acid, the ethylene glycol and the polyether modified defoaming agent in the proportion into the reaction kettle after the components are dissolved, and stirring until all the components of the cleaning agent are dissolved uniformly until a formula system is transparent. And (5) taking the product out of the kettle and packaging after the main performance indexes are detected to be qualified.
Example 2
A cleaning agent for a hard and brittle material wafer comprises the following components in percentage by weight: 67.5% of deionized water, 10% of sodium hydroxide, 955% of AMP, 4% of fatty alcohol-polyoxyethylene ether, 3% of ethylene glycol, 2% of dioctyl sulfosuccinate monosodium salt, 5% of sodium tripolyphosphate, 3% of vinyl distearamide and 0.5% of polyoxyethylene polyoxypropylene ether defoaming agent.
The components by weight percentage are as follows: adding deionized water in the proportion into an enamel blending kettle, starting stirring, slowly adding sodium hydroxide in the proportion into a reaction kettle, after the dissolution is finished, sequentially adding AMP95, fatty alcohol polyoxyethylene ether, ethylene glycol, dioctyl sulfosuccinate monosodium salt, sodium tripolyphosphate, vinyl distearamide and a polyoxyethylene polyoxypropylene ether defoaming agent in the proportion, stirring for 1h after the addition is finished, dissolving all cleaning agent components uniformly until the system is transparent, and taking out the cleaning agent from the kettle for packaging after the main performance indexes are detected to be qualified.
Example 3
A cleaning agent for a hard and brittle material wafer comprises the following components in percentage by weight: 58% of deionized water, 10% of sodium metasilicate pentahydrate, 10% of diglycolamine, 5% of isomeric tridecanol polyoxyethylene ether, 5% of sodium hexametaphosphate, 3% of sodium methyl benzene sulfonate, 3% of sodium polyacrylate salt, 5% of diethylene glycol monobutyl ether and 1% of polyether modified siloxane.
The components by weight percentage are as follows: adding the deionized water in the proportion into an enamel blending kettle, starting stirring, slowly adding the sodium metasilicate pentahydrate and the diglycolamine in the proportion into the reaction kettle, sequentially adding the isotridecanol polyoxyethylene ether, the sodium hexametaphosphate, the sodium methyl styrene sulfonate, the sodium polyacrylate and the polyether modified siloxane in the proportion after the dissolution is finished, then adding the diethylene glycol monobutyl ether in the proportion, stirring for 1h, and dissolving all cleaning agent components uniformly until the system is transparent. And (5) taking the product out of the kettle and packaging after the main performance indexes are detected to be qualified.
Example 4
A cleaning agent for a hard and brittle material wafer comprises the following components in percentage by weight: 57% of deionized water, 10% of sodium hydroxide, 5% of sodium metasilicate pentahydrate, 5% of triethanolamine, 5% of fatty alcohol-polyoxyethylene allyl ether, 5% of dipropylene glycol dimethyl ether, 2% of alkyl glycoside, 5% of sodium hexametaphosphate, 2% of EDTA-2Na, 3% of vinyl bis stearamide and 1% of polyether modified siloxane defoaming agent.
The components by weight percentage are as follows: adding the deionized water in the proportion into an enamel mixing kettle, starting stirring, slowly adding the sodium hydroxide in the proportion into a reaction kettle, after the sodium metasilicate pentahydrate, the triethanolamine, the fatty alcohol polyoxyethylene polyoxypropylene ether, the dipropylene glycol dimethyl ether, the alkyl glycoside, the sodium hexametaphosphate, the EDTA-2Na, the vinyl distearamide and the polyether modified siloxane in the proportion are sequentially added, stirring for 1h, after all cleaning agent components are uniformly dissolved, the system is transparent, and after the main performance indexes are detected to be qualified, taking out of the kettle and packaging.
Example 5
A cleaning agent for a hard and brittle material wafer comprises the following components in percentage by weight: 59% of deionized water, 10% of potassium hydroxide, 9510% of AMP, 5% of narrow-distribution fatty alcohol-polyoxyethylene ether, 5% of diethylene glycol monobutyl ether, 3% of neodecanoic acid, 5% of aminotrimethylene phosphine, 5% of polyethylene glycol (400) and 1% of polyether modified silane defoaming agent.
The components by weight percentage are as follows: and adding deionized water in the proportion into an enamel blending kettle, starting stirring, slowly adding potassium hydroxide in the proportion into the reaction kettle, after the dissolution is finished, sequentially adding AMP95, narrowly distributed fatty alcohol-polyoxyethylene ether, diethylene glycol monobutyl ether, neodecanoic acid, aminotrimethylene phosphine, polyethylene glycol (400) and a defoaming agent in the proportion, stirring for 1h, and taking out the mixture from the kettle and packaging after all cleaning agent components are uniformly dissolved, the system is transparent, and main performance indexes are detected to be qualified.
The performance indexes of the examples 1 to 5 of the cleaning agent for hard and brittle material wafers of the present invention were measured, and the technical indexes are shown in table 1.
TABLE 1 Performance indices of cleaning agents of examples 1-5
Based on the test results in table 1, three representative solutions of example 1, example 2 and example 4 in the above examples were selected, and the properties thereof can represent all formulations according to the present invention, and the formulations were used for cleaning after sapphire slice processing and compared with the currently used cleaning agent, and the results are shown in table 2.
TABLE 2 comparison of cleaning effect of the cleaning agent of the present invention and the currently used cleaning agent
From the comparative test results in table 2, it can be seen that the cleaning agent for hard and brittle material wafers provided by the present invention can improve the yield compared with the existing cleaning agent. Meanwhile, the liquid tank needs to be replaced every 1800 cleaning sheets by using the cleaning agent, the cleaning quantity of a single tank of the cleaning agent is increased by at least 14%, the cost of an enterprise is reduced, and a good and comfortable working environment can be provided for workers.
The cleaning agent for the hard and brittle material wafer provided by the invention can effectively clean dirt, has the advantages of long service life, quick dissolution, no energy absorption or release, no gas release, no influence on operators, no corrosion on workpieces, no environmental pollution, safety and environmental protection. Therefore, the invention has wide market application prospect.
The technical features of the embodiments described above can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention.
Claims (10)
1. The cleaning agent for the hard and brittle material wafer is characterized by comprising the following components in percentage by weight: 5-10% of inorganic alkali, 5-10% of organic alkali, 5-10% of surfactant, 3-5% of cosolvent, 1-5% of solubilizer, 1-5% of chelating agent, 2-5% of anti-redeposition agent, 0.5-1% of defoaming agent and the balance of deionized water.
2. The cleaning agent for hard and brittle material wafers as claimed in claim 1, characterized in that the inorganic alkali is one or more of sodium hydroxide, potassium hydroxide and sodium metasilicate pentahydrate.
3. The cleaning agent for hard and brittle material wafers as claimed in claim 1, characterized in that the organic base is one or more of diglycolamine, triethanolamine and AMP 95.
4. The cleaning agent for the hard and brittle material wafer as claimed in claim 1, wherein the surfactant is a nonionic surfactant, which is one or more of narrow-distribution polyoxyethylene ether, isomeric alcohol polyoxyethylene ether, and fatty alcohol polyoxyethylene polyoxypropylene ether.
5. The cleaning agent for hard and brittle material wafers as claimed in claim 1, characterized in that the cosolvent is one or more of dipropylene glycol dimethyl ether, diethylene glycol monobutyl ether and ethylene glycol.
6. The cleaning agent for hard and brittle material wafer as claimed in claim 1, characterized in that the solubilizer is one or two of citric acid, neodecanoic acid, dioctyl mono-sodium sulfosuccinate, C8-10 alkyl glycoside, and sodium p-toluenesulfonate.
7. The cleaning agent for hard and brittle material wafers as claimed in claim 1, wherein the complexing agent is one or more of aminotrimethylene phosphonic acid, sodium tripolyphosphate, sodium hexametaphosphate and disodium ethylenediamine tetraacetate.
8. The cleaning agent for hard and brittle material wafers as claimed in claim 1, characterized in that the anti-redeposition agent is one or more of acrylic acid homopolymer, acrylic acid/maleic acid copolymer, polyethylene glycol 200, polyethylene glycol 400, vinyl bis-stearamide, glycerol monostearate and glycerol tristearate.
9. The cleaning agent for the hard and brittle material wafer as claimed in claim 1, wherein the defoaming agent is one of polyether defoaming agent, silicone defoaming agent and polyether modified silicone defoaming agent.
10. The use method of the cleaning agent for the hard and brittle material wafer as claimed in claims 1 to 8, characterized in that the cleaning agent is diluted with water in a ratio of 1:10 to 1:20, and the pH value after dilution is 9 to 13.
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