CN111885852A - Preparation method of ceramic copper-clad plate - Google Patents
Preparation method of ceramic copper-clad plate Download PDFInfo
- Publication number
- CN111885852A CN111885852A CN202010725939.XA CN202010725939A CN111885852A CN 111885852 A CN111885852 A CN 111885852A CN 202010725939 A CN202010725939 A CN 202010725939A CN 111885852 A CN111885852 A CN 111885852A
- Authority
- CN
- China
- Prior art keywords
- copper
- ceramic
- layer
- ceramic substrate
- noble metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 82
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000010410 layer Substances 0.000 claims abstract description 50
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 238000005476 soldering Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000003466 welding Methods 0.000 claims abstract description 37
- 239000010949 copper Substances 0.000 claims abstract description 35
- 229910052802 copper Inorganic materials 0.000 claims abstract description 33
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 25
- 239000011241 protective layer Substances 0.000 claims abstract description 18
- 238000007747 plating Methods 0.000 claims abstract description 16
- 238000001465 metallisation Methods 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims abstract description 9
- 238000002844 melting Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 15
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 238000007733 ion plating Methods 0.000 claims description 7
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000005265 energy consumption Methods 0.000 abstract description 5
- 239000011889 copper foil Substances 0.000 description 13
- 238000005219 brazing Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
- H05K3/384—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/0435—Metal coated solder, e.g. for passivation of solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Products (AREA)
Abstract
The invention discloses a preparation method of a ceramic copper-clad plate, which comprises the following steps: performing surface metallization on the welding surface of the ceramic substrate, plating a soft soldering metal layer on the welding surface of the ceramic substrate and/or the welding surface of the copper plate, and plating a first noble metal protective layer on the outer surface of the soft soldering metal layer; if the welding surface of the ceramic substrate or the welding surface of the copper plate is not plated with the soldering metal layer, a second noble metal protective layer is plated; the ceramic substrate and the copper plate are laminated, pressed and melted, and the copper plate and the ceramic substrate are bonded at a temperature higher than the melting point of the soldering metal. The preparation method of the ceramic copper-clad plate disclosed by the invention is low in energy consumption, the product is not easy to deform, a welding layer is free of air holes, and the welding quality is good.
Description
[ technical field ]
The invention relates to a ceramic copper-clad plate, in particular to a preparation method of the ceramic copper-clad plate.
[ background art ]
The excellent heat conduction, thermal expansion and sealing performance of the thick copper ceramic circuit board (ceramic PCB) enables the thick copper ceramic circuit board to be widely applied to power devices and electronic products related to high power.
The traditional thick copper ceramic circuit board is formed by directly etching a DBC (copper clad laminate) ceramic copper clad laminate, the production process of the DBC ceramic copper clad laminate is complex, the product of the product often has bubbles with a certain proportion between the joint surfaces of copper foil and ceramic, so that the quality of the processed product is risky, the production of the ceramic (A1N or A1R 3) copper clad laminate often adopts a direct copper clad method DBC process, and the process utilizes Cu-Cu20 eutectic liquid phase generated by copper and cuprous oxide at 1064-1083 ℃ as a bonding agent between the copper plate and the ceramic plate to cover the copper plate and the ceramic plate together.
At present, the ceramic copper-clad plate is generally prepared by a vacuum pressureless brazing method, but the ceramic copper-clad plate prepared by the vacuum pressureless brazing method has high welding voidage and low drawing force and needs more welding fluxes. And the temperature is kept at 800-950 ℃ for 10-60 min for brazing. The brazing filler metal is difficult to remove in the later production process and difficult to produce. The methods all need to be carried out at a higher temperature, and due to the large difference between the welding temperature and the room temperature, the stress caused by the difference of the thermal expansion coefficients of the welding materials is difficult to overcome, and a plurality of quality hidden troubles are left.
The invention with the application number of CN201711318747.1 discloses a preparation method of an aluminum nitride ceramic copper-clad plate, belonging to the technical field of copper-clad substrate manufacturing. According to the invention, double-layer pre-metallization and brazing are respectively carried out on the upper surface and the lower surface of the ceramic substrate, so that the problems of low welding strength, large interface stress and low use reliability of the existing ceramic copper-clad plate are solved. The method comprises the following specific steps: (1) cleaning the aluminum nitride ceramic, and then carrying out ion bombardment on the surface of the ceramic by adopting a vacuum magnetron sputtering or ion plating method; (2) depositing T i, Zr, Hf or Cr metal layers and Cu metal layers on the upper and lower surfaces of the ceramic in sequence by vacuum magnetron sputtering or ion plating; (3) and coating metal soldering paste on two sides of the ceramic substrate deposited with the metal layer, and performing high-temperature soldering in a vacuum soldering furnace after clamping. The invention can realize the thick copper connection of the aluminum nitride ceramic substrate, improves the effect of metalizing the thick copper of the aluminum nitride ceramic, and has lower interface stress compared with direct brazing.
The bonding of the copper plate and the ceramic substrate needs high temperature of 800-900 ℃, the energy consumption in the welding process is high, and the ceramic copper-clad plate treated at high temperature has large stress and is easy to deform; the organic components in the soldering paste are easy to leave air holes in the welding layer, and the welding quality of the ceramic copper-clad plate is affected.
[ summary of the invention ]
The invention aims to solve the technical problem of providing a preparation method of a ceramic copper-clad plate which is low in energy consumption, difficult to deform and good in quality.
In order to solve the technical problems, the invention adopts the technical scheme that the preparation method of the ceramic copper-clad plate comprises the following steps:
101) performing surface metallization on the welding surface of the ceramic substrate, plating a soft soldering metal layer on the welding surface of the ceramic substrate and/or the welding surface of the copper plate, and plating a first noble metal protective layer on the outer surface of the soft soldering metal layer; if the welding surface of the ceramic substrate or the welding surface of the copper plate is not plated with the soldering metal layer, a second noble metal protective layer is plated;
102) the ceramic substrate and the copper plate are laminated, pressed and melted, and the copper plate and the ceramic substrate are bonded at a temperature higher than the melting point of the soldering metal.
In the preparation method of the ceramic copper-clad plate, the precious metal layer is plated before the soldering metal layer is plated on the soldering surface of the ceramic substrate and/or the soldering surface of the copper plate in the step 101.
In the preparation method of the ceramic copper-clad plate, before the step 101, the welding surface of the ceramic substrate is subjected to surface metallization through magnetron sputtering or ion plating.
According to the preparation method of the ceramic copper-clad plate, the material of the soft soldering metal layer is tin, the thickness of the soft soldering metal layer is 0.1-10 mu m, and the temperature of pressurizing and hot melting is 230-300 ℃; the first noble metal protective layer and the second noble metal protective layer are made of gold or silver, and the thickness of the first noble metal protective layer and the thickness of the second noble metal protective layer are 0.001-3 mu m.
According to the preparation method of the ceramic copper-clad plate, the material of the noble metal layer is gold or silver, and the thickness of the noble metal layer is 0.001-3 mu m.
In the preparation method of the ceramic copper-clad plate, the copper plate is prepared into the wiring before the step 101.
According to the preparation method of the ceramic copper-clad plate, the titanium layer is firstly deposited and then the copper layer is deposited after magnetron sputtering or ion plating is carried out for surface metallization.
The preparation method of the ceramic copper-clad plate disclosed by the invention is low in energy consumption, the product is not easy to deform, the welding layer has few pores, and the welding quality is good.
[ detailed description of the invention ]
The preparation method of the ceramic copper-clad plate comprises the following steps:
101) carrying out surface metallization on the welding surface of the ceramic substrate: and performing surface metallization on the welding surface of the ceramic substrate by magnetron sputtering or ion plating, depositing a titanium layer, and then depositing a copper layer to obtain the ceramic metal substrate.
102) A solder metal layer is plated on the bonding surface of the ceramic substrate and/or the bonding surface of the copper foil, and a noble metal protective layer is plated on the outer surface of the solder metal layer. If the welding surface of the ceramic substrate or the welding surface of the copper foil is not plated with the soldering metal layer, only one precious metal protective layer is plated.
103) The ceramic substrate and the copper foil are placed in a laminated manner, and then are pressed and melted, and the copper foil is bonded with the ceramic substrate at a temperature higher than the melting point of the soldering metal.
Before the soldering metal layer is plated on the welding surface of the ceramic substrate and/or the welding surface of the copper foil in the step 2, a noble metal layer can be plated.
The material of the soldering metal layer is preferably metallic tin, the thickness of the soldering metal layer is 0.1-10 μm, and the temperature of the pressurizing and hot melting is 230-300 ℃. The material of the noble metal protective layer and the noble metal layer is gold or silver, and the thickness of the noble metal protective layer and the noble metal layer is 0.001-3 mu m.
For example: after step 1 is completed, step 2 may be performed in the following manner:
plating Ag on the ceramic metal substrate, and plating Sn and Ag on the copper foil;
or plating Ag on the ceramic metal substrate, and plating Ag, Sn and Ag on the copper foil;
or plating Sn and Ag on the ceramic metal substrate and plating Sn and Ag on the copper foil;
or plating Sn and Ag on the ceramic metal substrate, and plating Ag, Sn and Ag on the copper foil;
or plating Sn and Ag on the ceramic metal substrate and plating Ag on the copper foil.
In step 3, the materials to be bonded are placed in a laminated mode, pressurized and hot melted, and copper and the ceramic metal sheet are bonded at the temperature higher than the melting point of the soft soldering flux, so that the bonding process at a lower temperature is realized, and the energy consumption in the process is low. Because a new alloy layer is formed in the bonding region, the content of silver in the components of the new alloy layer can be greatly improved, and the melting point of the alloy layer in the bonding region can be greatly improved during secondary reflow soldering. In addition, the soldering metal coating has no solder paste or solder resist, so that the soldering metal coating has fewer air holes and better oxidation resistance.
Before step 1, the copper foil can be etched first and then bonded, and the copper foil has the advantages that the etching process can be carried out on two sides, the efficiency is high, and the precision is better.
According to the preparation method of the ceramic copper-clad plate, the soldering paste is not used, the welding layer is very thin, a new diffusion alloy layer is easy to form in a welding temperature area, the secondary reflow temperature is greatly improved compared with the primary reflow temperature, the soldering temperature of the soft soldering metal layer is low, and the stress and the deformation of the finished ceramic copper-clad plate are small; because organic matters in the soldering paste and the solder resist do not exist in the process, the soldering layer has few air holes.
Claims (7)
1. The preparation method of the ceramic copper-clad plate is characterized by comprising the following steps:
101) performing surface metallization on the welding surface of the ceramic substrate, plating a soft soldering metal layer on the welding surface of the ceramic substrate and/or the welding surface of the copper plate, and plating a first noble metal protective layer on the outer surface of the soft soldering metal layer; if the welding surface of the ceramic substrate or the welding surface of the copper plate is not plated with the soldering metal layer, a second noble metal protective layer is plated;
102) the ceramic substrate and the copper plate are laminated, pressed and melted, and the copper plate and the ceramic substrate are bonded at a temperature higher than the melting point of the soldering metal.
2. The method for preparing the ceramic copper-clad plate according to claim 1, wherein a noble metal layer is plated before the soldering metal layer is plated on the soldering surface of the ceramic substrate and/or the soldering surface of the copper plate in step 101.
3. The method for preparing the ceramic copper-clad plate according to claim 1, wherein before the step 101, the welding surface of the ceramic substrate is subjected to surface metallization by magnetron sputtering or ion plating.
4. The preparation method of the ceramic copper-clad plate according to claim 1, wherein the solder metal layer is made of tin, the thickness of the solder metal layer is 0.1 μm-10 μm, and the temperature of the pressurized hot melting is 230-300 ℃; the first noble metal protective layer and the second noble metal protective layer are made of gold or silver, and the thickness of the first noble metal protective layer and the thickness of the second noble metal protective layer are 0.001-3 mu m.
5. The preparation method of the ceramic copper-clad plate according to claim 2, wherein the material of the noble metal layer is gold or silver, and the thickness of the noble metal layer is 0.001 μm to 3 μm.
6. The method for preparing the ceramic copper-clad plate according to claim 1, wherein the copper plate is subjected to line preparation before step 101.
7. The method for preparing the ceramic copper-clad plate according to claim 3, wherein the surface metallization by magnetron sputtering or ion plating is carried out by depositing a titanium layer and then depositing a copper layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010725939.XA CN111885852A (en) | 2020-07-24 | 2020-07-24 | Preparation method of ceramic copper-clad plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010725939.XA CN111885852A (en) | 2020-07-24 | 2020-07-24 | Preparation method of ceramic copper-clad plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111885852A true CN111885852A (en) | 2020-11-03 |
Family
ID=73202096
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010725939.XA Pending CN111885852A (en) | 2020-07-24 | 2020-07-24 | Preparation method of ceramic copper-clad plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111885852A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114630500A (en) * | 2021-10-12 | 2022-06-14 | 祥博传热科技股份有限公司 | Welding device for high-heat-conductivity copper-clad ceramic substrate |
| CN119233549A (en) * | 2024-10-10 | 2024-12-31 | 江西五阳新材料有限公司 | DBC ceramic copper-clad plate and preparation process thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06199579A (en) * | 1992-06-17 | 1994-07-19 | Nippon Alum Co Ltd | Method for joining metal member to ceramic member |
| CN102339758A (en) * | 2011-10-13 | 2012-02-01 | 华中科技大学 | Method for preparing copper-ceramic substrate by low-temperature bonding |
| CN105801179A (en) * | 2015-04-30 | 2016-07-27 | 深圳市环基实业有限公司 | Direct metallization method for ceramic substrate |
| CN108484200A (en) * | 2018-06-26 | 2018-09-04 | 烟台柳鑫新材料科技有限公司 | A kind of ceramic copper-clad plate and preparation method thereof |
| CN108520855A (en) * | 2018-05-11 | 2018-09-11 | 北京科技大学 | A method for improving the reliability of ceramic copper-clad laminates with nano-silver paste |
| EP3492441A1 (en) * | 2016-07-28 | 2019-06-05 | Kabushiki Kaisha Toshiba, Inc. | Bonding body, circuit board and semiconductor device |
-
2020
- 2020-07-24 CN CN202010725939.XA patent/CN111885852A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06199579A (en) * | 1992-06-17 | 1994-07-19 | Nippon Alum Co Ltd | Method for joining metal member to ceramic member |
| CN102339758A (en) * | 2011-10-13 | 2012-02-01 | 华中科技大学 | Method for preparing copper-ceramic substrate by low-temperature bonding |
| CN105801179A (en) * | 2015-04-30 | 2016-07-27 | 深圳市环基实业有限公司 | Direct metallization method for ceramic substrate |
| EP3492441A1 (en) * | 2016-07-28 | 2019-06-05 | Kabushiki Kaisha Toshiba, Inc. | Bonding body, circuit board and semiconductor device |
| CN108520855A (en) * | 2018-05-11 | 2018-09-11 | 北京科技大学 | A method for improving the reliability of ceramic copper-clad laminates with nano-silver paste |
| CN108484200A (en) * | 2018-06-26 | 2018-09-04 | 烟台柳鑫新材料科技有限公司 | A kind of ceramic copper-clad plate and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114630500A (en) * | 2021-10-12 | 2022-06-14 | 祥博传热科技股份有限公司 | Welding device for high-heat-conductivity copper-clad ceramic substrate |
| CN114630500B (en) * | 2021-10-12 | 2024-02-23 | 祥博传热科技股份有限公司 | Welding device for high-heat-conductivity copper-clad ceramic substrate |
| CN119233549A (en) * | 2024-10-10 | 2024-12-31 | 江西五阳新材料有限公司 | DBC ceramic copper-clad plate and preparation process thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111403347B (en) | Copper-ceramic interface structure of high-reliability silicon nitride copper-clad ceramic substrate and preparation method thereof | |
| CN108033810A (en) | A kind of preparation method of aluminium nitride ceramics copper-clad plate | |
| CN108520855A (en) | A method for improving the reliability of ceramic copper-clad laminates with nano-silver paste | |
| JP2001130986A (en) | Copper plated ceramic board, peltier element using the same and method for producing copper plated ceramic board | |
| TWI512150B (en) | Preparation of copper - clad copper - clad copper clad copper | |
| CN111885852A (en) | Preparation method of ceramic copper-clad plate | |
| JP4674983B2 (en) | Manufacturing method of joined body | |
| RU2558323C1 (en) | Method of metallisation of substrate from aluminium-nitride ceramics | |
| CN106552990B (en) | A kind of inside micro-bonding method of patch potentiometer | |
| CN113645765B (en) | Copper-clad substrate for high-end printed circuit board and preparation method thereof | |
| CN117156938A (en) | Manufacturing process of semiconductor refrigeration sheet and semiconductor refrigeration sheet | |
| JPH0810202Y2 (en) | Lightweight substrates for semiconductor devices | |
| JP2607700Y2 (en) | Lightweight substrates for semiconductor devices | |
| CN114695637A (en) | Thermoelectric crystal grain welding method | |
| CN103508745B (en) | Production method for ceramic aluminum-clad plate and ceramic aluminum-clad plate obtained by method | |
| JP2705689B2 (en) | Method of manufacturing lightweight substrate for semiconductor device | |
| JPH0714015B2 (en) | Manufacturing method of aluminum nitride substrate having copper circuit | |
| JPH0518477B2 (en) | ||
| CN115939091B (en) | High-heat-conductivity packaging substrate and preparation method thereof | |
| JPH0590761A (en) | Wiring board manufacturing method | |
| CN114940004B (en) | Copper-clad nitride ceramic substrate and preparation method thereof | |
| JP2006156975A (en) | BONDED BODY, POWER MODULE SUBSTRATE, POWER MODULE AND BONDED MANUFACTURING METHOD | |
| JPH0466688B2 (en) | ||
| JP2607699Y2 (en) | Lightweight substrates for semiconductor devices | |
| CN117773257A (en) | Preparation method of vacuum hot-press brazing ceramic copper-clad plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: No.9-1, no.9-2, no.9-3, No.7, Xinfa Second Road, Xinqiao community, Baoan District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Dinghua Xintai Technology Co.,Ltd. Address before: No. 9, Xinfa 2nd Road, Xinqiao community, Xinqiao street, Bao'an District, Shenzhen City, Guangdong Province Applicant before: ACCELERATED PRINTED CIRCUIT BOARD Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201103 |