CN111883932B - Low radar cross section reflectarray antenna based on artificial surface plasmon - Google Patents
Low radar cross section reflectarray antenna based on artificial surface plasmon Download PDFInfo
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- CN111883932B CN111883932B CN202010794856.6A CN202010794856A CN111883932B CN 111883932 B CN111883932 B CN 111883932B CN 202010794856 A CN202010794856 A CN 202010794856A CN 111883932 B CN111883932 B CN 111883932B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/0026—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers
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Abstract
本发明提出了一种低雷达散射截面的反射阵天线，主要解决现有反射阵天线的雷达散射截面减缩频带和角域范围窄的问题。其包括馈源(1)和位于馈源下方的反射阵面(2)，该反射阵面包括M×N个结构相同、参数不同的反射单元(3)，每个反射单元包括四个介质基板和印制在每个介质基板上的金属面，每个金属面由上、下金属枝节和金属枝干构成，其中上金属枝节由三个金属贴片构成，下金属枝节由五个金属贴片构成，四个介质基板两两贴合，构成两个叠层介质基板(31，32)，这两个叠层介质基板垂直放置构成十字型结构。本发明在保证反射阵天线的辐射效率的同时，在宽频带、宽角域的范围内实现了雷达散射截面减缩，可用于各类远距离无线通信系统中。
The invention proposes a reflection array antenna with low radar scattering cross section, which mainly solves the problems of the reduced frequency band and narrow angular domain of the radar scattering cross section of the existing reflection array antenna. It includes a feed (1) and a reflection front (2) located below the feed, the reflection front includes M×N reflection units (3) with the same structure and different parameters, and each reflection unit includes four dielectric substrates and a metal surface printed on each dielectric substrate, each metal surface is composed of upper and lower metal branches and metal branches, wherein the upper metal branch is composed of three metal patches, and the lower metal branch is composed of five metal patches In the structure, four dielectric substrates are laminated in pairs to form two laminated dielectric substrates (31, 32), and the two laminated dielectric substrates are placed vertically to form a cross-shaped structure. While ensuring the radiation efficiency of the reflection array antenna, the invention realizes the reduction of the radar scattering cross section in the range of wide frequency band and wide angle domain, and can be used in various long-distance wireless communication systems.
Description
Technical Field
The invention belongs to the technical field of electromagnetic fields and microwaves, and particularly relates to a low-radar-scattering-section reflective array antenna which can be used in various long-distance wireless communication systems.
Background
The surface plasmon SSP is an electromagnetic oscillation formed by interaction of free electrons and photons at a surface region of a metal, and is a surface electromagnetic wave propagating along an interface between the metal and a medium. In a microwave frequency band or a terahertz frequency band, metal cannot excite surface plasmons, a surface wave with a dispersion relation similar to that of the surface plasmons can be supported through an artificially designed periodic structure, the surface wave is called as an artificial surface plasmon polariton (SSPP), the periodic structure is called as an artificial surface plasmon polariton structure, the artificial surface plasmon polariton structure working in the microwave frequency band or the terahertz frequency band has good transmission and cut-off characteristics on electromagnetic waves, and the dispersion relation can be changed by changing relevant parameters of the structure, so that the transmission and cut-off characteristics on the electromagnetic waves are changed. Based on the characteristics, the artificial surface plasmon polariton structure can be well applied to the research fields of frequency selective surface FSS, antenna radar scattering cross section RCS reduction and the like.
With the development of satellite communication, radar technology and common civil communication, the requirement of a communication system for an antenna is higher, the antenna is required to have stronger anti-interference capability and longer communication distance in the present complex electromagnetic environment, so that the antenna is required to have the characteristics of high gain and high efficiency, the high gain antenna plays a significant role in the application of the antenna, the main high gain antenna at present comprises a reflector antenna and a microstrip array antenna, wherein the reflector antenna has the characteristics of high gain, high efficiency and no complex feed network, but the defects of large volume and high profile limit the application range of the antenna. The microstrip array antenna has the characteristics of small volume, light weight and low cost, but the feed network is complex in design and high in loss. The reflective array antenna combines the advantages of the two, namely, no complex feed network is provided, and the reflective array antenna has the characteristics of small volume, light weight and low cost, thereby being widely applied.
In order to improve the gain of the antenna, the most common method is to increase the radiation aperture of the antenna, so the existing high-gain antenna usually has the characteristic of larger area, which results in larger radar scattering cross section of the antenna, and the current methods for reducing the radar scattering cross section of the antenna include methods of shaping the antenna structure, using radar absorbing materials, using an additional frequency selection surface as an antenna cover, and the like.
Disclosure of Invention
The invention aims to design a low radar scattering cross section reflective array antenna based on artificial surface plasmons aiming at the defects in the prior art, so as to improve the frequency band range and the angular domain range of radar scattering cross section reduction on the premise of ensuring good radiation performance of the antenna.
In order to achieve the purpose, the low radar scattering cross section reflective array antenna based on the artificial surface plasmon comprises a feed source 1 and a reflective array surface 2, wherein the reflective array surface 2 is composed of M multiplied by N reflecting units 3 with the same structure and different parameters, and is characterized in that:
the reflection unit 3 adopts a cross structure, namely a three-dimensional artificial surface plasmon structure formed by crisscrossing a first laminated dielectric slab 31 and a second laminated dielectric slab 32;
the first laminated dielectric plate 31 is composed of a first dielectric substrate 311, a second dielectric substrate 312, a first left metal surface 313 and a first right metal surface 314 printed on two sides of the surface of the first dielectric substrate 311, and the metal-printed surface of the first dielectric substrate 311 is adhered to the second dielectric substrate 312;
the second laminated dielectric plate 32 is composed of a third dielectric substrate 321, a fourth dielectric substrate 322, and a second left metal surface 323 and a second right metal surface 324 printed on both sides of the surface of the third dielectric substrate 321, and the metal-printed surface of the third dielectric substrate 321 is adhered to the fourth dielectric substrate 322.
Further, the first dielectric substrate 311, the second dielectric substrate 312, the third dielectric substrate 321 and the fourth dielectric substrate 322 are all rectangular, a first upper rectangular through groove 3111 is formed above the center of the first dielectric substrate 311, and a second upper rectangular through groove 3121 is formed above the center of the second dielectric substrate 312; a first lower rectangular through groove 3211 is formed below the center of the third dielectric substrate 321, and a second lower rectangular through groove 3221 is formed below the center of the fourth dielectric substrate 322;
further, the first upper rectangular through groove 3111 is attached to the second upper rectangular through groove 3121, the first lower rectangular through groove 3211 is attached to the second lower rectangular through groove 3221, and the upper and lower rectangular through grooves are vertically disposed to form a cross structure.
Further, the first left metal surface 313 is composed of upper metal branches 3131, lower metal branches 3132, and metal branches 313;
further, the first right metal surface 314, the second left metal surface 323, the second right metal surface 324 and the first left metal surface 313 are identical in structure and are respectively obtained by rotating the first left metal surface 313 by 180 degrees around the central axis of the cross structure, by 90 degrees clockwise, and by 90 degrees counterclockwise.
Further, the upper metal branch 3131 is composed of three rectangular metal patches with the same size, the three metal patches are arranged in parallel from bottom to top, and the distance between two adjacent patches is the same;
further, the lower metal branch 3132 is located below the upper metal branch 3131, and is formed by five rectangular metal patches with the same size, wherein the five metal patches are arranged in parallel from bottom to top, and the distance between two adjacent metal patches is the same;
further, the metal branch 3133 is a rectangular metal post, and is located at one end of the three metal patches of the upper metal branch 3131 and the five metal patches of the lower metal branch 3132, so as to connect the eight metal patches.
Further, the lengths L of the three metal patches in the upper metal stub 3131 of each reflection unit 3 are determined by the reflection phase value of that reflection unit 3; the size of the five metal patches in the lower metal branch 3132 of each reflection unit 3 is independent of the reflection phase value of the reflection unit 3, i.e. the size of the lower metal branch 3132 in each reflection unit 3 is the same; the size of the metal branch 3133 of each reflection unit 3 is independent of the reflection phase value of the reflection unit 3, i.e. the size of the metal branch 3133 in each reflection unit 3 is the same.
Compared with the prior art, the invention has the following advantages:
first, the invention uses the reflection array plane formed by M multiplied by N reflection units with different reflection phases, within the working frequency band, the spherical electromagnetic wave radiated by the feed source can be reflected into the plane electromagnetic wave, thus ensuring the radiation gain of the reflection array antenna, and outside the working frequency band, the radar detection wave can penetrate through the reflection array plane, thus the reflection array antenna has the characteristic of low radar scattering cross section.
Secondly, the reflection unit of the invention adopts a three-dimensional artificial surface plasmon structure formed by crisscross of two laminated dielectric substrates with the same structure, so that two polarized electromagnetic waves can be regulated and controlled;
thirdly, the laminated dielectric substrate of the invention is provided with four metal surfaces, and each metal surface comprises a lower metal branch and an upper metal branch. Because the lower metal branch can save energy to enable the reflection unit to generate band elimination characteristics, the reflection unit has the characteristic of high reflection coefficient within the working frequency band range, the radiation efficiency of the reflection array antenna is ensured, and the reflection unit has the characteristic of high wave transmission efficiency outside the working frequency band range, so that radar detection wave energy can penetrate through the reflection unit; meanwhile, when the reflection phase of the reflection unit is adjusted, the upper metal branch has small influence on the reflection and transmission characteristics of the reflection unit, so that the reflection units with different reflection phases have high reflection coefficients in a working frequency band and have high transmission coefficients outside the working frequency band.
Drawings
Fig. 1 is a schematic three-dimensional structure of a reflective array antenna according to the present invention;
FIG. 2 is a schematic view showing the overall structure of each reflection unit in the present invention;
FIG. 3 is a schematic diagram of the layered structure of each reflection unit in the present invention;
FIG. 4 is a schematic diagram of the structure of the metal surface of the reflective array unit in the present invention;
FIG. 5 is a graph showing the relationship between the length of the upper metal branch of each reflection unit and the reflection phase thereof in examples 1, 2 and 4 of the present invention;
FIG. 6 is the azimuth angle at 10.0GHz for the first three embodiments of the invention
A gain simulation result graph when the pitch angle theta is-180 degrees to-180 degrees;
FIG. 7 is the azimuth angle at 10.0GHz for the first three embodiments of the invention
A gain simulation result graph when the pitch angle theta is-180 degrees to-180 degrees;
FIG. 8 shows the azimuth angles of example 1 and example 3 of the present invention in the frequency band range of 8.5GHz to 11.5GHz
A gain simulation result graph when the pitch angle theta is 0 degrees;
FIG. 9 shows the azimuthal angle of x-polarized waves at normal incidence in the frequency band from 1.0GHz to 22.0GHz for examples 1 and 3 of the present invention
A simulation result diagram of a radar scattering cross section when the pitch angle theta is 0 degrees;
FIG. 10 shows the 20 degree oblique incidence of the x-polarized wave in examples 1 and 3 of the present invention, and the azimuth angle thereof is in the frequency band range of 1.0GHz to 22.0GHz
A simulation result diagram of a radar scattering cross section when the pitch angle theta is minus 20 degrees;
FIG. 11 shows the azimuth angles of the X-polarized waves of example 1 and example 3 of the present invention at an oblique incidence of 40 DEG in the frequency band from 1.0GHz to 22.0GHz
And (5) a simulation result diagram of the radar scattering cross section when the pitch angle theta is minus 40 degrees.
Detailed Description
The following describes in detail specific embodiments and effects of the present invention with reference to the drawings.
Referring to fig. 1, four examples are given as follows:
example 1
The embodiment comprises a feed source 1 and a reflection array surface 2, wherein the beam width of the feed source 1 is 40 degrees, the reflection array surface 2 is positioned right below the feed source 1, the distance f between the reflection array surface 2 and the phase center of the feed source 1 is 165.0mm, and the reflection array surface 2 is composed of 14 multiplied by 14 reflection units 3 with the same structure and different parameters. Each of the reflecting units 3 is cross-shaped by a first laminated dielectric plate 31 and a second laminated dielectric plate 32 to constitute a three-dimensional artificial surface plasmon structure, as shown in fig. 2.
The reflection phase of each reflection cell 3 in the reflection front 2 is determined by the following formula:
wherein phi isiIs the reflection phase of the ith reflection unit 3, wherein i is from 1 to 14 x 14, the operating wavelength λ in free space is 30.0mm, RiIs the distance from the phase center of the feed 1 to the center of the i-th reflection unit 3, riIs a vector pointing from the center of the reflection array 2 to the center of the ith reflection unit 3, and is a unit vector r along the radiation direction of the reflection array antenna0＝(0,0,0)，φ0Take 0.
Referring to fig. 3, the first laminated medium 31 of each reflection unit 3 is composed of a first medium substrate 311, a second medium substrate 312, and a first left metal surface 313 and a first right metal surface 314 printed on both sides of the surface of the first medium substrate 311, and the metal-printed surface of the first medium substrate 311 is adhered to the second medium substrate 312; the second laminated dielectric plate 32 of each reflecting unit 3 is composed of a third dielectric substrate 321, a fourth dielectric substrate 322, and a second left metal face 323 and a second right metal face 324 printed on both sides of the surface of the third dielectric substrate 321, and the metal-printed face of the third dielectric substrate 321 is adhered to the fourth dielectric substrate 322.
The first right metal surface 314, the second left metal surface 323, the second right metal surface 324 and the first left metal surface 313 are all the same in structure, that is, the first right metal surface 314 is formed by rotating the first left metal surface 313 by 180 degrees around the central axis of the crisscross structure, the second left metal surface 323 is formed by rotating the first left metal surface 313 by 90 degrees clockwise around the central axis of the crisscross structure, and the second right metal surface 324 is formed by rotating the first left metal surface 313 by 90 degrees counterclockwise around the central axis of the crisscross structure;
the first dielectric substrate 311, the second dielectric substrate 312, the third dielectric substrate 321 and the fourth dielectric substrate 322 are all rectangular, a first upper rectangular through groove 3111 is formed above the center of the first dielectric substrate 311, and a second upper rectangular through groove 3121 is formed above the center of the second dielectric substrate 312; a first lower rectangular through groove 3211 is formed below the center of the third dielectric substrate 321, and a second lower rectangular through groove 3221 is formed below the center of the fourth dielectric substrate 322;
the first upper rectangular through groove 3111 is attached to the second upper rectangular through groove 3121, and the first lower rectangular through groove 3211 is attached to the second lower rectangular through groove 3221; the two attached upper rectangular through grooves and the two attached lower rectangular through grooves are vertically arranged, and finally a cross structure as shown in fig. 2 is formed.
The first dielectric substrate 311, the second dielectric substrate 312, the third dielectric substrate 321 and the fourth dielectric substrate 322 are all rectangular plates with a relative dielectric constant of 2.2, the thickness t of each rectangular plate is 0.5mm, the length w of each rectangular plate is 17.0mm, and the height h of each rectangular plate is 8.0 mm; in fig. 3, the first upper rectangular through groove 3111, the second upper rectangular through groove 3121, the first lower rectangular through groove 3211, and the first lower rectangular through groove 3221 are all 4.0mm in height by 0.5 × h, and 1.0mm in width by 2 × t.
Referring to fig. 4, first left metal surface 313 is composed of upper metal branch 3131, lower metal branch 3132, and metal stem 3133; wherein the upper metal branch 3131 is composed of three rectangular metal patches with the same size, the three metal patches are arranged in parallel from bottom to top, and the distance between two adjacent patches is the same; the lower metal branch 3132 is located below the upper metal branch 3131 and is formed by five rectangular metal patches with the same size, the five metal patches are arranged in parallel from bottom to top, and the distance between two adjacent patches is the same; the metal branch 3133 is a rectangular metal post, and is located at one end of the three metal patches of the upper metal branch 3131 and the five metal patches of the lower metal branch 3132, so as to connect the eight metal patches.
The distances g between the three metal patches in the upper metal branch 3131 are all 0.5mm, the width b of each metal patch is 0.5mm, the lengths L are all equal, and the lengths L of the three metal patches are determined by the reflection phase of the reflection unit 3 to obtain each reflection sheetPhi is a unitiLength L of upper metal branch of four metal surfacesiAnd its reflection phase phiiIs shown as a solid line in fig. 5.
The distances g between the five metal patches in the lower metal branch 3132 are all 0.5mm, the width b of each metal patch is 0.5mm, the length a of each metal patch is 6.0mm, and the size of the five metal patches in the lower metal branch 3132 of each reflection unit 3 is independent of the reflection phase value of the reflection unit 3, i.e. the size of the lower metal branch 3132 in each reflection unit 3 is the same; the distance g between the lower metal branch 3132 and the upper metal branch 3131 is 0.5 mm;
the width b and height 8 xb +7 xg of the metal branch 3133 are 0.5mm and 7.5mm, respectively. And the size of the metal branch 3133 of each reflection unit 3 is independent of the reflection phase value of the reflection unit 3, i.e. the size of the metal branch 3133 in each reflection unit 3 is the same.
Example 2
The present embodiment has the same structure as embodiment 1, and only the following parameters are adjusted: the beam width of the feed source 1 is 35 °, the distance f from the phase center of the feed source 1 to the reflective front surface 2 is 188.0mm, the widths of the three metal patches of the upper metal branch 3131 and the widths b of the five metal patches of the lower metal branch 3132 are 0.7mm, the pitch of the three metal patches of the upper metal branch 3131, the pitch of the five metal patches of the lower metal branch 3132, and the pitch g of the upper metal branch 3131 and the lower metal branch 3132 are 0.7mm, the width b and the height 8 × b +7 × g of the metal branch 3133 are 0.7mm and 10.5mm, the heights h of the first dielectric substrate 311, the second dielectric substrate 312, the third dielectric substrate 321, and the fourth dielectric substrate 322 are 11.2mm, and the heights h of the first upper rectangular through groove 3111, the second upper through groove 3121, the first lower rectangular through groove 3211, and the first lower rectangular through groove 3221 are 5.6 mm.
The reflection phase of each reflection unit is determined according to the formula<1>And (4) calculating. Obtaining the lengths L of the upper metal branches of the four metal surfaces of each reflection unit i through simulationiAnd its reflection phase phiiThe relationship of (a) is shown by the dashed line in fig. 5.
Example 3
The present embodiment has the same structure and parameters as those of embodiment 1, and only a metal plate with dimensions of 238mm × 238mm is added below the reflection front 2 of embodiment 1, and the metal plate is closely attached to the reflection front 2.
Example 4
The present embodiment has the same structure as embodiment 1, and only the following parameters are adjusted: wherein:
the beam width of the feed source 1 is 30 °, the distance f from the phase center of the feed source 1 to the reflective front surface 2 is 220.0mm, the widths of the three metal patches of the upper metal branch 3131 and the widths b of the five metal patches of the lower metal branch 3132 are 0.3mm, the pitch of the three metal patches of the upper metal branch 3131, the pitch of the five metal patches of the lower metal branch 3132, and the pitch g between the upper metal branch 3131 and the lower metal branch 3132 are 0.3mm, the width b and the height 8 × b +7 × g of the metal branch 3133 are 0.3mm and 4.5mm, respectively, the height h of the first dielectric substrate 311, the second dielectric substrate 312, the third dielectric substrate 321, and the fourth dielectric substrate 322 is 4.8mm, and the heights h of the first upper rectangular through groove 3111, the second upper rectangular through groove 3121, the first lower rectangular through groove 3211, and the first lower rectangular through groove 3221 are 2.4 mm.
The reflection phase of each reflection unit is determined according to the formula<1>And (4) calculating. Obtaining the lengths L of the upper metal branches of the four metal surfaces of each reflection unit i through simulationiAnd its reflection phase phiiThe relationship of (a) is shown by a chain line in fig. 5.
The effects of the present invention can be further illustrated by the following simulations:
firstly, simulation software:
commercially available Ansoft HFSS 15.0 software.
Secondly, simulating contents:
As can be seen from fig. 6, the radiation pattern of example 1 has a maximum gain of 25.2dB and a side lobe of less than-18 dB; the maximum gain of the radiation pattern of the embodiment 2 is 24.3dB, and the side lobe is less than-16 dB; the radiation pattern of example 3 has a maximum gain of 25.6dB and a side lobe of less than-18 dB.
As can be seen from FIG. 7, the maximum gain of the radiation pattern of the embodiment 1 is 25.2dB, and the side lobe is less than-17 dB; the maximum gain of the radiation pattern of the embodiment 2 is 24.3dB, and the side lobe is less than-15 dB; the radiation pattern of example 3 has a maximum gain of 25.6dB and a side lobe of less than-19 dB.
From the simulation results of fig. 6 and 7, it is shown that the difference in the feed and reflection unit parameters will affect the maximum gain and side lobe of the antenna radiation pattern, and the maximum gain of example 1 is only reduced by 0.4dB compared to example 3 with a metal plate.
By combining the simulation results, compared with embodiment 3, embodiment 1 realizes the reduction of the scattering cross section of the broadband and wide-angle-range radar under the conditions of less reduction of the maximum gain and the 1dB working bandwidth.
The foregoing description is only four embodiments of the present invention and is not intended to limit the present invention, and it will be apparent to those skilled in the art that various modifications and variations in form and detail can be made without departing from the principle and structure of the present invention after understanding the present general inventive concept, but the modifications and variations are still within the scope of the appended claims and the protection scope of the present invention.
Claims (8)
1. The utility model provides a low radar scattering cross section reflection array antenna based on artificial surface plasmon, includes feed (1) and reflection wavefront (2), reflection wavefront (2) comprise M N reflection unit (3) that the structure is the same, the parameter is different, its characterized in that:
the reflection unit (3) is of a cross structure, namely a three-dimensional artificial surface plasmon structure formed by criss-crossing a first laminated dielectric slab (31) and a second laminated dielectric slab (32);
the first laminated dielectric plate (31) is composed of a first dielectric substrate (311), a second dielectric substrate (312), a first left metal surface (313) and a first right metal surface (314), wherein the first left metal surface and the first right metal surface are printed on two sides of the same surface of the first dielectric substrate (311), and the surface, printed with metal, of the first dielectric substrate (311) is adhered to the second dielectric substrate (312);
the first left metal surface (313) is composed of an upper metal branch (3131), a lower metal branch (3132) and a metal stem (3133);
the first right metal surface (314), the second left metal surface (323), the second right metal surface (324) and the first left metal surface (313) are identical in structure and are respectively obtained by rotating the first left metal surface (313) by 180 degrees around the central axis of the cross structure, by 90 degrees clockwise and by 90 degrees anticlockwise;
the upper metal branch knot (3131) is composed of three rectangular metal patches with the same size, the three metal patches are arranged in parallel from bottom to top, and the distance between every two adjacent patches is the same;
the lower metal branch (3132) is positioned below the upper metal branch (3131) and consists of five rectangular metal patches with the same size, the five metal patches are arranged in parallel from bottom to top, and the distance between every two adjacent patches is the same;
the metal branch (3133) is a rectangular metal column, is positioned at one end of the three metal patches of the upper metal branch (3131) and one end of the five metal patches of the lower metal branch (3132), and is used for connecting the eight metal patches;
the second laminated dielectric plate (32) is composed of a third dielectric substrate (321), a fourth dielectric substrate (322), and a second left metal surface (323) and a second right metal surface (324) printed on two sides of the surface of the third dielectric substrate (321), and the metal-printed surface of the third dielectric substrate (321) is adhered to the fourth dielectric substrate (322).
2. The antenna of claim 1, wherein:
the first dielectric substrate (311), the second dielectric substrate (312), the third dielectric substrate (321) and the fourth dielectric substrate (322) are all rectangular, a first upper rectangular through groove (3111) is formed above the center of the first dielectric substrate (311), and a second upper rectangular through groove (3121) is formed above the center of the second dielectric substrate (312); a first lower rectangular through groove (3211) is formed below the center of the third medium substrate (321), and a second lower rectangular through groove (3221) is formed below the center of the fourth medium substrate (322);
the first upper rectangular through groove (3111) is attached to the second upper rectangular through groove (3121), the first lower rectangular through groove (3211) is attached to the second lower rectangular through groove (3221), and the upper and lower rectangular through grooves are vertically arranged to form a cross structure.
3. The antenna of claim 1, wherein the first dielectric substrate (311), the second dielectric substrate (312), the third dielectric substrate (321) and the fourth dielectric substrate (322) are rectangular plates with the same relative dielectric constant, and have a thickness t of 0.3-0.8 mm, a length w of 15.0-20.0 mm and a height h of 4.8-11.2 mm.
4. The antenna of claim 1, wherein:
the distance g between every two adjacent metal patches in the upper metal branch knot (3131) is 0.3-0.7 mm, the width b of each metal patch is 0.3-0.7 mm, and the length L of each metal patch is 1.0-7.0 mm;
the distance g between every two adjacent five metal patches in the lower metal branch (3132) is 0.3-0.7 mm, the width b of each metal patch is 0.3-0.7 mm, the length a of each metal patch is 5.0-7.0 mm, and the distance g between the lower metal branch (3132) and the upper metal branch (3131) is 0.3-0.7 mm;
the width b of the metal branch (3133) is 0.3-0.7 mm, and the height 8 x b +7 x g is 4.5-10.5 mm.
5. The antenna of claim 2, wherein the first upper rectangular through slot (3111), the second upper rectangular through slot (3121), the first lower rectangular through slot (3211), and the first lower rectangular through slot (3221) are all 2.4-5.6 mm in height by 0.5 x h, and 0.6-1.6 mm in width by 2 x t.
6. The antenna of claim 1, wherein the reflection front (2) is located below the feed source (1) and the distance f from the feed source (1) is 165.0-220.0 mm.
7. The antenna according to claim 1, wherein the reflection phase of each reflection element (3) is determined by the following formula:
wherein phi isiIs the reflection phase of the ith reflection unit (3), wherein the value of i is from 1 to M multiplied by N, lambda is the working wavelength in free space, RiIs the distance r from the phase center of the feed source (1) to the center of the ith reflection unit (3)iIs a vector pointing from the center of the reflection front (2) to the center of the i-th reflection unit (3), r0Is along the reflection arrayUnit vector of radiation direction, phi0In any degree.
8. The antenna of claim 1, wherein:
the length L of the three metal patches in the upper metal stub (3131) of each reflection unit (3) is determined by the reflection phase value of that reflection unit (3);
the size of the five metal patches in the lower metal stub (3132) of each reflection unit (3) is independent of the reflection phase value of the reflection unit (3), i.e. the size of the lower metal stub (3132) in each reflection unit (3) is the same;
the size of the metal branch (3133) of each reflection unit (3) is independent of the reflection phase value of the reflection unit (3), i.e. the size of the metal branch (3133) in each reflection unit (3) is the same.
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| CN113270725B (en) * | 2021-05-12 | 2023-05-23 | 中国人民解放军空军工程大学 | Ultra-wideband and large-angle grazing incidence wave absorber based on artificial surface plasmon |
| CN115395242B (en) * | 2022-08-09 | 2023-10-10 | 西安电子科技大学 | A three-dimensional co-aperture multi-frequency co-polarized transflective array antenna |
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| CN105742795A (en) * | 2016-04-06 | 2016-07-06 | 东南大学 | Transparent reflective array antenna adopting graphene unit |
| CN107819202A (en) * | 2017-09-30 | 2018-03-20 | 北京邮电大学 | Beam scanning reflecting antenna array and beam sweeping method based on graphene |
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| CN110034396A (en) * | 2019-03-29 | 2019-07-19 | 上海交通大学 | Vertical depolarized omnidirectional antenna based on artificial surface phasmon structure |
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