CN111850469A - In-situ preparation method of DLC resistive electrode for large-area microstructure gas detector - Google Patents

Abstract

The invention discloses an in-situ preparation method for DLC resistive electrodes for large-area microstructure gas detectors. Pre-heating, bombardment and etching are performed at the set value, and then by controlling the opening and closing of the front baffle of the sputtering cathode target, the high-purity graphite target is sequentially sputtered to deposit a 50-150nm DLC resistive layer, and high-purity chromium is sputtered. The target and copper target deposit 10~80nm bonding layer and transition layer, sputtering copper target deposits 4~8μm pure copper layer, and at the same time, the plasma etching technology is combined in the preparation process to improve the film density and reduce the DLC resistance. Internal stress in electrodes. The method of the invention can in situ prepare a large-area new type DLC resistive electrode substrate with good binding force and low internal stress, and can be popularized and applied in a large-area microstructure gas detector with a new configuration.

Description

In situ fabrication of a DLC resistive electrode for large-area microstructured gas detectors method

technical field

The invention relates to a method for preparing a DLC resistive electrode, in particular to a method for preparing a DLC resistive electrode in situ, which is mainly used for large-area microstructure gas detectors and belongs to the field of microstructure gas detectors.

Background technique

With the development of nuclear and particle physics experiments, the Micro-Pattern Gas Detector (MPGD) has the advantages of good position resolution, high count rate capability, stable performance, strong radiation resistance, and low cost. It can meet the experimental requirements of high count rate capability and position resolution capability. It has attracted the attention of domestic and foreign research colleagues in the field of particle detection, and has been widely used in current large-scale nuclear and particle physics experiments. As one of the key components in the microstructure gas detector, the resistive electrode can suppress the sparking and discharge phenomenon of the detector in a high-energy and high-brightness working environment, so as to protect the detector and prolong its service life. Therefore, new resistive electrodes and their preparation methods have gradually become a research hotspot in the field of microstructured gas detectors.

The DLC (Diamond-Like Carbon) resistive electrode prepared by magnetron sputtering is a new type of resistive electrode that is very suitable for microstructure gas detectors emerging in recent years. The shortcomings of the carbon paste resistive electrode have been used in microstructure gas detectors such as GEM, MicroMegas, and μRWELL. However, with the deepening of research, the simple DLC resistive electrode formed only by depositing the DLC resistive layer on the polyimide film has been difficult to meet the processing and fabrication requirements of many detectors, such as in the more demanding polyimide film. In the substrate etching process, the DLC resistive layer is difficult to resist the penetration of the corrosive liquid, resulting in excessive etching, which reduces the yield of the detector; the surface of the DLC resistive layer cannot be printed with a small width and high precision by lithographic printing. The high fast grounding line constitutes a high-voltage access loop, which greatly limits the expansion of the detector function and the application in harsh environments. Therefore, the research on the preparation method of new DLC resistive electrodes is very critical. CN201811146713.3 discloses a composite substrate and a preparation method thereof. By adopting the method of non-equilibrium magnetron sputtering, a DLC thin film resistive layer, a metal chromium and chromium copper co-doped thin film transition layer are sequentially prepared on the surface of the substrate Apical, and Pure copper thin film layer. However, this method has certain limitations. On the one hand, it is limited that the preparation system cannot perform the clamping and preparation of large-area DLC resistive substrates. On the other hand, during the preparation process, the substrate needs to be placed in an oven after baking. Put it into the vacuum chamber to prepare the DLC resistive layer, then take out the sample, sputter and clean the metal chromium target and copper target, and then re-clamp to prepare the micron copper layer. The in-situ molding preparation has low efficiency, and requires multiple sputtering and cleaning of the target material, resulting in unnecessary waste of the target material.

Therefore, a new type of DLC resistive electrode in-situ preparation method and system for large-area microstructure gas detectors is provided, which solves the existing technical problems and provides technical support for the development of more new configuration microstructure gas detectors. really necessary.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a method for in-situ preparation of DLC resistive electrodes for large-area microstructure gas detectors, so as to solve the problems of in-situ one-time molding preparation and relatively poor binding force existing in the process of preparing DLC resistive electrodes by existing methods. Due to the technical problems such as low temperature and high internal stress, the preparation efficiency and reliability of DLC resistive electrodes can be improved to meet the needs and applications of large-area new-configuration microstructure gas detectors.

The present invention is used for the in-situ preparation method of the DLC resistive electrode of the large-area microstructure gas detector, comprising the following steps:

(1) Surface pretreatment of polyimide film

Wipe and clean the large-area electrode substrate polyimide film with a clean cloth dipped in absolute ethanol, remove contaminants and dust, and then clamp it on the sample turret and place it in the cavity of the vacuum vapor deposition system; Vacuum to 5×10 ^-3 Pa; turn on the heating device in the vacuum chamber, bake at 70~200℃ for 5~12 hours to completely remove the residual moisture; then keep the vacuum degree of the chamber below 3×10 ^-3 Pa , pass high-purity argon with a flow rate of 100~200sccm, stabilize the chamber pressure at 0.1~0.7Pa, turn on the bias power supply and apply -200~-300V pulse negative bias on the sample turret for plasma bombardment and Etching; the rotating speed of the turret is 1~5 rpm, and the plasma bombardment and etching time is 30~60 minutes.

(2) Preparation of DLC resistive layer on the surface of polyimide film

After the surface pretreatment of the polyimide film is completed, the high-purity argon gas of 100~150sccm and the high-purity acetylene gas of 0~10sccm are introduced, and the pressure of the cavity is kept at 0.2~0.5Pa, and the bias power supply and the high-purity graphite target are turned on. The control power supply, respectively, set the negative bias voltage to -30~-70V, the sputtering power to 1~7.5KW, the rotation speed of the turret to be 1~5 rpm, and the sputter deposition time to be 10~60 minutes. A DLC resistive layer is sputtered on the surface of the amine film, and then the bias voltage is kept unchanged, and the plasma etching process is continued for 5 to 15 minutes to improve the compactness of the DLC resistive layer and reduce its internal stress, while controlling the thickness of the DLC resistive layer 50~150nm.

(3) Preparation of bonding layer and transition layer

After the DLC resistive layer is prepared, turn off the control power of the graphite target, turn on the control power of the high-purity metal chromium target (or titanium target) and the baffle in front of the target, close the acetylene gas valve, and keep the bias in step (2). pressure and argon gas flow, set the sputtering power to 2~4KW, sputter deposition for 1~10 minutes, prepare the metal chromium (or titanium) bonding layer, and then turn on the control power supply of the high-purity metal copper target and the shutter in front of the target. plate, set the sputtering power to gradually increase from 0.5KW to the set value, and gradually reduce the sputtering power of the chromium target (or titanium target) to 0KW, so as to prepare the metal co-doping gradient transition layer, and the time is 1~10 minutes; the transition layer After deposition, keep the bias voltage unchanged and continue the plasma etching treatment for 3~10 minutes, improve the compactness of the chromium (or titanium) bonding layer and the chromium-copper (or titanium-copper) gradient transition layer and reduce their internal stress, while controlling the bonding The total thickness of layer and transition layer is 10~80nm.

(4) Preparation of micron copper layer

After in-situ preparation of the metal-chromium bonding layer and the metal-chromium-copper co-doped gradient transition layer on the DLC resistive layer, turn off the control power supply of the chromium target and the baffle in front of the target, and keep the control power supply of the copper target and the front of the target. Open the baffle of the copper target, maintain the argon flow rate in step (3), set the negative bias voltage to -30~-100V, and set the copper target sputtering power to 2~7 KW, and perform sputter deposition and plasma etching treatment periodically. Alternate way, in which the continuous sputtering deposition time is 25~35 minutes, and the cumulative sputtering deposition time is 2~5 hours; each plasma etching time is 3~10 minutes, which improves the density of the copper layer and reduces its internal stress, Finally, a copper layer with a dense structure, good bonding force, low internal stress and a thickness of 3-10 microns is prepared on the surface of the DLC resistive layer, and a new type of DLC resistive electrode is obtained.

The vacuum chamber of the vacuum vapor deposition system is equipped with a heating device, and the chamber wall is equipped with four sets of magnetron sputtering cathodes, two of which are used for sputtering metal targets, two sets are used for sputtering graphite targets, and metal targets are used for sputtering. It is installed in alignment with the graphite target; all sputtering targets are provided with a baffle plate.

The sample turret is a stainless steel orifice plate cylinder fixed on the rotating shaft, which can facilitate the flexible adjustment of the clamping position of the large-area polyimide film substrate.

The present invention has the following beneficial effects relative to the prior art:

1. The present invention can realize the preparation of a new type of DLC resistive electrode used in a large-area microstructure gas detector, and effectively expand the practical application of the microstructure gas detector;

2. The present invention adopts the in-situ preparation method, which overcomes the traditional method of first using an oven to bake the detector electrode substrate and then putting it into a vacuum chamber to prepare the DLC resistive layer, and then degassing and removing the vacuum chamber. The disadvantage that the chromium target and the copper target are cleaned and then reloaded into the vacuum chamber to prepare different film layers in sequence can significantly simplify the preparation process, save up to 50% of the preparation time, and improve the preparation efficiency of DLC resistive electrodes;

3. Through the control of the vacuum vapor deposition system, the sputtering and protection of graphite, chromium (or titanium) and copper targets can be flexibly set, which not only avoids the waste of target materials caused by multiple sputtering cleaning, but also prevents the DLC resistance layer. Avoid contact with air after preparation to cause surface contamination and oxidation; at the same time, plasma etching treatment is used in the preparation process, which can not only improve the bonding force between different layers, but also optimize the compactness of the copper layer to ensure DLC resistance. the reliability of the electrodes;

4. In the in-situ preparation of the new DLC resistive electrode, a combination of sputtering deposition and plasma etching treatment is used, and the deposition time and plasma etching time are reasonably regulated, which is beneficial to reduce the DLC resistive electrode. The internal stress generated in the preparation process avoids the curling phenomenon caused by excessive internal stress and ensures the flatness of the resistive electrode.

Description of drawings

FIG. 1 is a process flow diagram of the in-situ preparation of a DLC resistive electrode according to the present invention.

Fig. 2 is the distribution of cathode sputtering targets (1-4), heating device (5), baffle plate (6) and sample turret (7) of the vacuum vapor deposition system used in the in-situ preparation of DLC resistive electrodes according to the present invention Schematic.

Detailed ways

The in-situ preparation method of the DLC resistive electrode of the present invention will be further described below with reference to the accompanying drawings through specific examples.

Example 1

A new type of DLC resistive electrode for microstructure gas detector was prepared by using polyimide film with a size of 600mm×300mm, a thickness of 50±5 microns, and no copper coating on the surface as the electrode substrate.

Equipment used: refer to accompanying drawing 1, there are four sets of heating devices 5 in the vacuum chamber, and four sets of vacuum vapor deposition systems of magnetron sputtering cathodes 1-4 are arranged on the chamber wall, wherein 1 is loaded with high-purity metal chromium targets, 2, 4 pairs of high-purity graphite targets are installed, and 3 are high-purity metal copper targets; each sputtering target is equipped with a baffle 6 that can be opened and closed. Among them, the purity of high-purity graphite, chromium and copper targets are all 99.99%, and the dimensions of the targets are all 600mm×125mm×12mm.

The sample turret is a stainless steel orifice plate cylinder fixed on the rotating shaft, which can facilitate the flexible adjustment of the clamping position of the large-area polyimide film substrate. The diameter and center distance of the small holes on the orifice plate cylinder are both 5mm.

The method and process steps of the in-situ preparation of the new DLC resistive electrode:

(1) Polyimide film surface pretreatment: Wipe and clean the polyimide film substrate with a clean cloth dipped in absolute ethanol, remove dust and other contaminants, and then clamp it on the sample turret and place it in the chamber medium; vacuumize to 5×10 ^-3 Pa, turn on the heating device in the cavity and bake at 100°C for 12 hours to completely remove the residual moisture; then keep the cavity vacuum below 3×10 ^-3 Pa, turn off All the baffles in front of the sputtering targets, pass high-purity argon with a flow rate of 100~200sccm (preferably 150sccm), stabilize the chamber pressure at 0.1~0.7Pa, turn on the bias power supply and apply -200 to the sample turret Pulse negative bias voltage of ~-300V (preferably -200V), set the rotation speed of the turret to 3 rpm, and perform plasma bombardment and etching for 30 minutes.

(2) Preparation of DLC resistive layer on the surface of polyimide film: After pretreatment of the polyimide film substrate, open the baffle in front of the high-purity graphite target, close the baffle in front of the high-purity copper target and the chromium target, only Introduce 100~150sccm (preferably 120sccm) high-purity argon, keep the pressure of the cavity at 0.2~0.5Pa, the rotating speed of the turntable at 3 rpm, turn on the bias power supply and the control power supply of the high-purity graphite target, and set the negative The bias voltage is -50V, the sputtering power is 4KW, the sputtering deposition time is 10~60 minutes (preferably 30 minutes), and the bias voltage is kept unchanged after the DLC resistive layer is prepared on the surface of the substrate, and plasma etching is continued for 8 minutes , improve the compactness of the DLC resistive layer and reduce its internal stress, while optimizing the bonding interface with the subsequent preparation of the bonding layer, where the thickness of the DLC resistive layer is about 80 nm.

(3) Preparation of bonding layer and transition layer: After the DLC resistive layer is prepared, the control power supply of the high-purity graphite target and the baffle in front of the target are closed, and the control power supply of the high-purity chromium target and the baffle in front of the target are opened, and the The bias voltage and argon flow rate in step (2) remain unchanged, the sputtering power of the high-purity chromium target is set to 3KW, and the metal chromium bonding layer is prepared by sputtering deposition for 1 to 10 minutes (preferably 3 minutes), and then the high-purity copper is turned on. The control power supply of the target and the baffle in front of the target, the sputtering power is set to gradually increase from 0.5KW to 3KW, and the sputtering power of the high-purity chromium target is gradually reduced from 3KW to 0KW, so as to prepare a metal co-doped gradient transition layer, time 1 to 10 minutes (preferably 5 minutes). After the transition layer is deposited, the bias voltage remains unchanged and the plasma etching treatment is continued for 5 minutes to improve the compactness of the chromium bonding layer and the chromium-copper gradient transition layer and reduce their internal stress, and control the total thickness of the bonding layer and the transition layer. 50nm.

(4) Preparation of micron-scale copper layer: After in-situ preparation of metal-chromium bonding layer and metal-chromium-copper co-doped gradient transition layer on the DLC resistive layer, turn off the control power supply of the high-purity chromium target and the baffle in front of the target. Keep the control power supply of the high-purity copper target and the baffle in front of the target open, maintain the argon flow in step (3), set the negative bias voltage to -30~-100V (preferably -50V), and splash the high-purity copper target. The sputtering power is 2~7 KW (preferably 3 KW), and the sputtering deposition and plasma etching are carried out periodically, wherein the continuous sputtering deposition time is 30 minutes, and the cumulative time is 4 hours. 5 minutes to improve the density of the copper layer and reduce its internal stress, and finally prepare a copper layer with a thickness of about 5 microns on the surface of the DLC resistive layer to obtain a new type of DLC resistive electrode with an area of 600mm×300mm.

(5) Performance test of DLC resistive electrode: The prepared resistive electrode was laid flat on a horizontal plane, and no obvious curling phenomenon was found, indicating that the large-area resistive electrode prepared by this in-situ method has lower internal stress , showing good flatness; the cross-cut test defined in the international standard ISO 2049 shows that the resistive electrodes prepared by this in-situ method have good adhesion between the different film layers, and no interlayers appear. The phenomenon of falling off; the resistivity of the DLC resistive layer prepared by this in-situ method is 8~12MΩ by scale comparison.

Example 2

A new type of DLC resistive electrode for microstructure gas detectors was prepared using a polyimide film with a size of 1500mm×500mm, a thickness of 50±5 microns, and a single-sided copper coating (copper layer thickness of 5 microns) as the base material .

Equipment used: Same as Example 1, the installation position and purity of the sputtering target are the same.

The process steps of in-situ preparation of DLC resistive electrodes:

(1) Surface pretreatment of single-sided copper-coated polyimide film: Wipe and clean the surface of the copper-free layer of single-sided copper-coated polyimide film with a clean cloth dipped in absolute ethanol to remove dust and other pollutants. , cover the copper-coated surface with aluminum foil, then clamp it on the sample turret and place it in the cavity; evacuate to 5×10 ^-3 Pa, turn on the heating device in the cavity, and bake at 150 ℃ for 7 hours , completely remove the residual moisture; then keep the cavity vacuum below 3×10 ^-3 Pa, close all the baffles in front of the sputtering target, and pass in high-purity argon with a flow rate of 100~200sccm (preferably 200sccm), stable The air pressure in the chamber is 0.1~0.7Pa, turn on the bias power supply and apply a pulse negative bias voltage of -200~-300V (preferably -250V) on the sample turret, and set the rotation speed of the turret to be 3 rpm for plasma bombardment and Etching for 45 minutes;

(2) Preparation of DLC resistive layer on the surface of single-sided copper-coated polyimide film: After the surface of single-sided copper-coated polyimide film is pretreated, open the baffle in front of the graphite target, and close the baffle in front of the copper target and the chromium target Plate, pass 100~150sccm (preferably 120sccm) of high-purity argon and 2sccm of high-purity acetylene, keep the pressure of the cavity at 0.2~0.5Pa, the rotation speed of the turntable at 3 rpm, and turn on the bias power supply and the graphite target. Control the power supply, set the negative bias voltage to -50V, the graphite target sputtering power to 4KW, the sputtering deposition time to 10-30 minutes (preferably 45 minutes), and prepare the DLC resistance on the surface of the single-sided copper-coated polyimide film. After the layer, the bias voltage remains unchanged and plasma etching is continued for 10 minutes to improve the compactness of the DLC resistive layer and reduce its internal stress, and at the same time optimize the bonding interface with the subsequently prepared bonding layer, where the thickness of the DLC resistive layer is about is 100nm.

(3) Preparation of bonding layer and transition layer: After the DLC resistive layer is prepared, the control power supply of the high-purity graphite target and the baffle in front of the target are closed, and the control power supply of the high-purity chromium target and the baffle in front of the target are opened, and then closed Acetylene gas valve, keep the bias voltage and argon gas flow rate unchanged in step (2), set the sputtering power to 3KW, prepare the metal chromium bonding layer after sputtering deposition for 1 to 10 minutes (preferably 5 minutes), and then turn on the high-purity The control power supply of the copper target and the baffle in front of the target are set to gradually increase the sputtering power from 0.5KW to 3KW, and the sputtering power of the high-purity chromium target gradually decreases from 3KW to 0KW, thereby preparing the metal co-doped gradient transition layer. The time is 1 to 10 minutes (preferably 3 minutes), and after the transition layer is deposited, the bias voltage is kept unchanged and the plasma etching is continued for 6 minutes to improve the compactness of the chromium bonding layer and the chromium-copper gradient transition layer and reduce their internal stress. , while controlling the total thickness of the binding layer and the transition layer to be about 80 nm.

(4) Preparation of micron-scale copper layer: After in-situ preparation of metal-chromium bonding layer and metal-chromium-copper co-doped gradient transition layer on the DLC resistive layer, turn off the control power supply of the high-purity chromium target and the baffle in front of the target. Keep the control power supply of the high-purity copper target and the baffle in front of the target open, maintain the argon flow in step (3), set the negative bias voltage to -30~-100V (preferably -50V), and splash the high-purity copper target. The sputtering power is 2~7 KW (preferably 4 KW), and the sputtering deposition and plasma etching are carried out periodically. The continuous sputtering deposition time is 30 minutes, and the cumulative time is 3.5 hours; the plasma etching time is 7 Minutes to improve the compactness of the copper layer and reduce its internal stress, and finally prepare a copper layer with a thickness of about 6 microns on the surface of the DLC resistive layer to obtain a new DLC with an area size of 1500mm×500mm, good compactness, low internal stress and reliable bonding Resistive electrodes.

(5) Performance test of DLC resistive electrode: The prepared resistive electrode was laid flat on a horizontal plane, and no obvious curling phenomenon was found, indicating that the large-area resistive electrode prepared by this in-situ method has lower internal stress , showing good flatness; the cross-cut test defined in the international standard ISO 2049 shows that the resistive electrodes prepared by this in-situ method have good adhesion between the different film layers, and no interlayers appear. The phenomenon of falling off; the resistivity of the DLC resistive layer prepared by this in-situ method was measured by the scale comparison to be 165~400MΩ.

Claims (6)

1. A method for in-situ preparation of a DLC resistive electrode for a large-area microstructure gas detector, comprising the following steps: (1) surface pretreatment of a polyimide film: use a dust-free cloth dipped in absolute ethanol to clean the large area; The area of the electrode substrate polyimide film was wiped and cleaned to remove contaminants and dust, and then clamped on the sample turret and placed in the cavity of the vacuum vapor deposition system; vacuumed to 5×10 ^-3 Pa; turned on The heating device in the vacuum chamber is baked at 70~200℃ for 5~12 hours to completely remove the residual moisture; then the vacuum degree of the chamber is kept below 3×10 ^-3 Pa, and the flow rate is 100~200sccm. Pure argon gas, stable chamber pressure at 0.1~0.7Pa, turn on the bias power supply and apply -200~-300V pulse negative bias on the sample turret for plasma bombardment and etching for 30~60 minutes; (2) Preparation of DLC resistive layer on the surface of the polyimide film: After the surface pretreatment of the polyimide film is completed, 100-150 sccm of high-purity argon gas and 0-10 sccm of high-purity acetylene gas are introduced to maintain the cavity pressure is 0.2~0.5Pa, turn on the bias power supply and the control power supply of the high-purity graphite target, set the negative bias voltage to -30~-70V, the sputtering power is 1~7.5KW, and the sputtering deposition time is 10~60 minutes. Sputter the DLC resistive layer on the surface of the polyimide film, then keep the bias voltage unchanged, continue to use plasma etching for 5~15 minutes to improve the compactness of the DLC resistive layer and reduce its internal stress, while controlling The thickness of the DLC resistive layer is 50~150nm; (3) Preparation of bonding layer and transition layer: After the preparation of the DLC resistive layer, turn off the control power of the graphite target, turn on the control power of the high-purity metal chromium target or titanium target and the baffle in front of the target, and close the acetylene gas valve. Maintain the bias voltage and argon flow rate in step (2), set the sputtering power to 2~4KW, sputter deposition for 1~10 minutes, prepare a metal chromium or titanium bonding layer, and then turn on the control power supply of the high-purity metal copper target And the baffle in front of the target, set the sputtering power to gradually increase from 0.5KW to the set value, and gradually reduce the sputtering power of the chromium target or titanium target to 0KW, so as to prepare the metal co-doping gradient transition layer, the time is 1~10 After the deposition of the transition layer, keep the bias voltage unchanged and continue the plasma etching treatment for 3~10 minutes to improve the compactness of the chromium or titanium bonding layer and the chromium-copper or titanium-copper gradient transition layer and reduce the internal stress, while controlling the bonding The total thickness of layer and transition layer is 10~80nm; (4) Preparation of micron-scale copper layer: After in-situ preparation of metal-chromium bonding layer and metal-chromium-copper co-doped gradient transition layer on the DLC resistive layer, turn off the control power supply of the chromium target and the baffle in front of the target to keep the copper The control power supply of the target material and the baffle plate in front of the target material are turned on, maintain the argon flow rate in step (3), set the negative bias voltage to -30~-100V, and the sputtering power of the copper target to be 2~7 KW, and perform sputtering. The deposition and plasma etching treatment are periodically alternated to improve the density of the copper layer and reduce its internal stress. Finally, a dense structure, good bonding force, low internal stress and a thickness of 3~10 are prepared on the surface of the DLC resistive layer. Micron copper layer to obtain a new type of DLC resistive electrode. 2. A method for in-situ preparation of a DLC resistive electrode for a large-area microstructure gas detector as claimed in claim 1, wherein in each step, the rotating speed of the turret is 1-5 rpm. 3 . The method for in-situ preparation of a DLC resistive electrode for a large-area microstructure gas detector according to claim 1 , wherein: in step (1), the thickness of the polyimide film of the electrode substrate is 50 μm. 4 . ±5 microns, with an area of 600mm × 300mm ~ 1500mm × 500mm on one side of the copper-clad substrate or without copper on both sides. 4 . The method for in-situ preparation of a DLC resistive electrode for a large-area microstructure gas detector as claimed in claim 1 , wherein in step (4), the sputtering deposition and plasma etching are performed periodically. 5 . When alternately performed, each continuous sputtering deposition time is 25-35 minutes, the cumulative sputtering deposition time is 2-5 hours; and each plasma etching time is 3-10 minutes. 5. A method for in-situ preparation of a DLC resistive electrode for a large-area microstructure gas detector as claimed in claim 1, wherein the vacuum chamber of the vacuum vapor deposition system is provided with a heating device, and the chamber wall is provided with a heating device. Four sets of magnetron sputtering cathodes are installed, two of which are used for sputtering metal targets and two sets are used for sputtering graphite targets, and the metal targets and graphite targets are installed in alignment; all sputtering targets are provided with bezel. 6. A method for in-situ preparation of a DLC resistive electrode for a large-area microstructure gas detector as claimed in claim 1, wherein the sample turret is a stainless steel orifice cylinder fixed on a rotating shaft , and the diameter and center distance of the small holes on the orifice plate cylinder are both 5mm.

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