CN111835316B - A P-channel MOS tube driving circuit with adaptive input voltage - Google Patents
A P-channel MOS tube driving circuit with adaptive input voltage Download PDFInfo
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- CN111835316B CN111835316B CN202010708406.0A CN202010708406A CN111835316B CN 111835316 B CN111835316 B CN 111835316B CN 202010708406 A CN202010708406 A CN 202010708406A CN 111835316 B CN111835316 B CN 111835316B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/014—Modifications of generator to ensure starting of oscillations
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
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Abstract
本发明公开一种自适应输入电压的P沟道MOS管驱动电路，包括第一MOS管、三极管、第一电阻、二极管、第一恒流开关模块、第二恒流开关模块及触发源，第一MOS管的栅极分别与三极管的发射极和第一恒流开关模块连接，第一MOS管的漏极连接有电路输出端，第一MOS管的源极分别连接电路的输入端和三极管的集电极，二极管设置在三极管的发射极和基极之间，三极管的基极分别连接二极管的负极和第二恒流开关模块，第一电阻的一端与电路输入端连接，第一电阻的另一端与三极的基极连接，第一恒流开关模块和第二恒流开关模块均与触发源连接。本发明能够自适应不同的输入电压，拓宽了输入电压的范围。
The present invention discloses a P-channel MOS tube driving circuit with adaptive input voltage, comprising a first MOS tube, a triode, a first resistor, a diode, a first constant current switch module, a second constant current switch module and a trigger source, wherein the gate of the first MOS tube is respectively connected to the emitter of the triode and the first constant current switch module, the drain of the first MOS tube is connected to the circuit output end, the source of the first MOS tube is respectively connected to the input end of the circuit and the collector of the triode, the diode is arranged between the emitter and the base of the triode, the base of the triode is respectively connected to the negative electrode of the diode and the second constant current switch module, one end of the first resistor is connected to the circuit input end, the other end of the first resistor is connected to the base of the triode, and the first constant current switch module and the second constant current switch module are both connected to the trigger source. The present invention can adapt to different input voltages and broaden the range of input voltage.
Description
Technical Field
The invention belongs to the technical field of battery production and manufacturing, and particularly relates to a P-channel MOS tube driving circuit capable of self-adapting to input voltage.
Background
The P-channel MOS transistor is a commonly used switching device, and has low hole mobility, so that the transconductance of the PMOS transistor is smaller than that of the N-channel MOS transistor under the condition that the geometry of the MOS transistor and the absolute value of the operating voltage are equal. In addition, the absolute value of the threshold voltage of the P-channel MOS transistor is generally higher, and a higher operating voltage is required. The voltage and polarity of the power supply are not compatible with bipolar transistor-transistor logic circuits. Because of the simple process and low price of the PMOS circuit, some medium-scale and small-scale digital control circuits still adopt the PMOS circuit technology.
However, the inventor finds that the scheme has at least the following defects that the driving circuit needs to provide the driving voltage equivalent to the source voltage of the P-channel MOS tube to close the P-channel MOS tube due to the voltage characteristics of the grid electrode and the source electrode of the P-channel MOS tube, so that when the input voltage is changed, the driving voltage is correspondingly changed, and the application range of the P-channel MOS tube is limited.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides the P-channel MOS tube driving circuit capable of adapting to the input voltage, solves the problem that the driving voltage of the P-channel MOS tube needs to follow the change of the input voltage, ensures that the driving circuit can adapt to different input voltages, and widens the range of the input voltage.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
The utility model provides a P channel MOS pipe drive circuit of self-adaptation input voltage, includes first MOS pipe Q1, triode Q2, first resistance R1, diode D1, first constant current switch module, second constant current switch module and trigger source, first MOS pipe Q1's grid respectively with triode Q2's projecting pole and first constant current switch module are connected, first MOS pipe Q1's drain electrode is connected with the circuit output, first MOS pipe Q1's source electrode respectively connect the input of circuit with triode Q2's collecting electrode, diode D1 sets up between triode Q2's projecting pole and base, triode Q2's base is connected respectively diode D1's negative pole with second constant current switch module, first resistance R1's one end with circuit input is connected, first resistance R1's the other end with triode Q2's base is connected, first constant current switch module and second constant current switch module all with trigger source is connected.
As an improvement of the P-channel MOS tube driving circuit for self-adapting to input voltage, the anode of the diode D1 is respectively connected with the grid electrode of the first MOS tube Q1, the emitter of the triode Q2 and the first constant current switch module, and the cathode of the diode D1 is respectively connected with the first resistor R1 and the second constant current switch module.
As an improvement of the P-channel MOS tube driving circuit capable of adapting to the input voltage, the first constant current switch module comprises a second resistor R2, a first constant current diode D2 and a second MOS tube Q3 which are sequentially connected.
As an improvement of the P-channel MOS tube driving circuit for self-adapting to input voltage, the second constant current switch module comprises a third resistor R3, a second constant current diode D3 and a third MOS tube Q4 which are sequentially connected.
As an improvement of the P-channel MOS transistor driving circuit for self-adapting to input voltage, the grid electrode of the second MOS transistor Q3 is connected with the grid electrode of the third MOS transistor Q4, the source electrode of the second MOS transistor Q3 and the source electrode of the third MOS transistor Q4 are grounded, and the drain electrode of the second MOS transistor Q3 and the drain electrode of the third MOS transistor Q4 are respectively connected with the first constant current diode D2 and the second constant current diode D3.
As an improvement of the P-channel MOS tube driving circuit for self-adapting to input voltage, one end of the second resistor R2 is connected with the grid electrode of the first MOS tube Q1, and the other end of the second resistor R2 is connected with the first constant current diode D2.
As an improvement of the P-channel MOS tube driving circuit capable of adapting to the input voltage, one end of the third resistor R3 is connected with the base electrode of the triode Q2, and the other end of the third resistor R3 is connected with the second constant current diode D3.
As an improvement of the P-channel MOS tube driving circuit capable of adapting to the input voltage, the second MOS tube Q3 and the third MOS tube Q4 are both N-channel MOS tubes.
The invention has the beneficial effects that the circuit comprises a first MOS tube Q1, a triode Q2, a first resistor R1, a diode D1, a first constant current switch module, a second constant current switch module and a trigger source, wherein the grid electrode of the first MOS tube Q1 is respectively connected with the emitter electrode of the triode Q2 and the first constant current switch module, the drain electrode of the first MOS tube Q1 is connected with a circuit output end, the source electrode of the first MOS tube Q1 is respectively connected with the input end of the circuit and the collector electrode of the triode Q2, the diode D1 is arranged between the emitter electrode and the base electrode of the triode Q2, the base electrode of the triode Q2 is respectively connected with the cathode electrode of the diode D1 and the second constant current switch module, one end of the first resistor R1 is connected with the circuit input end, the other end of the first resistor R1 is connected with the base electrode of the triode Q2, and the first constant current switch module and the second constant current switch module are both connected with the trigger source. The driving circuit is required to provide a driving voltage equivalent to the source voltage of the P-channel MOS transistor to close the P-channel MOS transistor due to the voltage characteristics of the grid electrode and the source electrode of the P-channel MOS transistor, when the input voltage is changed, the driving voltage is correspondingly changed, and the application range of the P-channel MOS transistor is limited, therefore, the structure that both the first constant current switch module and the second constant current switch module are connected with a trigger source is adopted, when the trigger source gives a signal, the first constant current switch module and the second constant current switch module are closed, the voltage difference between the grid electrode and the source electrode of the first MOS transistor Q1 is the difference between the input voltage and the conduction voltage between the base electrode and the emitter electrode of the triode Q2, and is lower than the conduction voltage of the first MOS transistor Q1, and the conduction voltage is equal to the difference between the grid electrode voltage and the source voltage, and the base electrode of the triode Q2 is also lower than the conduction voltage of the first MOS transistor Q1, and the base electrode of the triode Q1 can obtain a large current on the base electrode of the triode Q2, and the first MOS transistor Q1 can be rapidly closed and output, and simultaneously, the current of the triode Q1 can be enabled to flow on the first MOS transistor Q1 can be rapidly cut off, and the drain due to the fact that the base electrode of the first MOS transistor Q2 is not equal to the current. Therefore, the input voltage is changed, the voltage difference between the grid electrode and the source electrode of the first MOS tube Q1 is unchanged, the driving circuit can adapt to different input voltages, and the range of the input voltage is widened. The invention solves the problem that the driving voltage of the P-channel MOS tube needs to follow the change of the input voltage, so that the driving circuit can adapt to different input voltages, and the range of the input voltage is widened.
Drawings
Fig. 1 is a circuit diagram of embodiment 1 of the present invention.
Fig. 2 is a circuit diagram of embodiment 2 of the present invention.
Detailed Description
Certain terms are used throughout the description and claims to refer to particular components. Those of skill in the art will appreciate that a hardware manufacturer may refer to the same component by different names. The description and claims do not take the form of an element differentiated by name, but rather by functionality. As used throughout the specification and claims, the word "comprise" is an open-ended term, and thus should be interpreted to mean "include, but not limited to. By "substantially" is meant that within an acceptable error range, a person skilled in the art can solve the technical problem within a certain error range, substantially achieving the technical effect.
In the description of the present invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "horizontal", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected via an intervening medium, or in communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The present invention will be described in further detail with reference to fig. 1 to 2, but the present invention is not limited thereto.
Example mode 1
As shown in fig. 1, a P-channel MOS transistor driving circuit capable of adapting to an input voltage includes a first MOS transistor Q1, a triode Q2, a first resistor R1, a diode D1, a first constant current switch module, a second constant current switch module and a trigger source, wherein a gate of the first MOS transistor Q1 is connected with an emitter of the triode Q2 and the first constant current switch module respectively, a drain of the first MOS transistor Q1 is connected with a circuit output end, a source of the first MOS transistor Q1 is connected with an input end of the circuit and a collector of the triode Q2 respectively, the diode D1 is arranged between an emitter and a base of the triode Q2, a base of the triode Q2 is connected with a cathode of the diode D1 and the second constant current switch module respectively, one end of the first resistor R1 is connected with the circuit input end, and the other end of the first resistor R1 is connected with the base of the triode Q2, and the first constant current switch module and the second constant current switch module are connected with the trigger source. The driving circuit is required to provide a driving voltage equivalent to the source voltage of the P-channel MOS transistor to close the P-channel MOS transistor due to the voltage characteristics of the grid electrode and the source electrode of the P-channel MOS transistor, when the input voltage is changed, the driving voltage is correspondingly changed, and the application range of the P-channel MOS transistor is limited, therefore, the structure that both the first constant current switch module and the second constant current switch module are connected with a trigger source is adopted, when the trigger source gives a signal, the first constant current switch module and the second constant current switch module are closed, the voltage difference between the grid electrode and the source electrode of the first MOS transistor Q1 is the difference between the input voltage and the conduction voltage between the base electrode and the emitter electrode of the triode Q2, and is lower than the conduction voltage of the first MOS transistor Q1, and the conduction voltage is equal to the difference between the grid electrode voltage and the source voltage, and the base electrode of the triode Q2 is also lower than the conduction voltage of the first MOS transistor Q1, and the base electrode of the triode Q1 can obtain a large current on the base electrode of the triode Q2, and the first MOS transistor Q1 can be rapidly closed and output, and simultaneously, the current of the triode Q1 can be enabled to flow on the first MOS transistor Q1 can be rapidly cut off, and the drain due to the fact that the base electrode of the first MOS transistor Q2 is not equal to the current. Therefore, the input voltage is changed, the voltage difference between the grid electrode and the source electrode of the first MOS tube Q1 is unchanged, the driving circuit can adapt to different input voltages, and the range of the input voltage is widened.
In this embodiment, the constant current is 5.6mA, so that the voltage of the first resistor R1 is unchanged, and the voltage of the first resistor R1=680 Ω×0.0056ma= 3.808V. The conducting voltage of the first MOS tube Q1 is equal to the sum of the voltage difference of the first resistor R1 and the conducting voltage of the triode Q2, the conducting voltage of the first MOS tube Q1 is = -3.808-0.7 = -4.508V, and the voltage difference and constant current source current of the first resistor R1 are unchanged, so that the conducting voltage of the first MOS tube Q1 is kept unchanged-4.508V, the input voltage is changed, the voltage difference between the grid electrode and the source electrode of the first MOS tube Q1 is unchanged, the driving circuit can adapt to different input voltages, and the range of the input voltage is widened.
The working principle of the invention is as follows:
The driving circuit is required to provide a driving voltage equivalent to the source voltage of the P-channel MOS transistor to close the P-channel MOS transistor due to the voltage characteristics of the grid electrode and the source electrode of the P-channel MOS transistor, when the input voltage is changed, the driving voltage is correspondingly changed, and the application range of the P-channel MOS transistor is limited, therefore, the structure that both the first constant current switch module and the second constant current switch module are connected with a trigger source is adopted, when the trigger source gives signals, the first constant current switch module and the second constant current switch module are closed, the voltage difference between the grid electrode and the source electrode of the first MOS transistor Q1 is the difference between the input voltage and the conduction voltage of the base electrode and the emitter electrode of the triode Q2, and is lower than the conduction voltage of the first MOS transistor Q1, and the conduction voltage is equal to the difference between the grid electrode voltage and the source electrode voltage, and the base electrode of the triode Q2 is high-current can be obtained on the base electrode of the triode Q2 when a small current is added to the base electrode of the triode Q2, and the trigger source electrode of the first MOS transistor Q1 is turned off rapidly, meanwhile, the current of the triode Q2 can be turned off and output in a small current can be obtained on the constant current on the base electrode of the triode Q1 and the constant current source and the base electrode of the triode Q1, and the constant current is not equal to the current difference between the first constant current source and the base electrode of the first constant current switch Q1 and the first constant current source. Therefore, the input voltage is changed, the voltage difference between the grid electrode and the source electrode of the first MOS tube Q1 is unchanged, the driving circuit can adapt to different input voltages, and the range of the input voltage is widened.
Example mode 2
As shown in fig. 2, unlike embodiment 1, the first constant current switch module in this embodiment includes a second resistor R2, a first constant current diode D2, and a second MOS transistor Q3 sequentially connected, where a gate of the second MOS transistor Q3 is connected to a gate of a third MOS transistor Q4, a source of the second MOS transistor Q3 and a source of the third MOS transistor Q4 are both grounded, a drain of the second MOS transistor Q3 is connected to the first constant current diode D2, one end of the second resistor R2 is connected to a gate of the first MOS transistor Q1, the other end of the second resistor R2 is connected to the first constant current diode D2, a resistance value of the second resistor R2 is 51Ω, a model of the first constant current diode D2 is S-103T, and the second MOS transistor Q3 is an N-channel MOS transistor. When the trigger source gives a signal, and the first constant current switch module and the second constant current switch module are turned on, the anode voltage and the cathode voltage of the diode D1 are higher than the conducting voltage of the diode D1, and then the current of the grid electrode of the first MOS tube Q1 is discharged through the diode D1 and the second resistor R2, so that the conducting speed of the first MOS tube Q1 is accelerated. When the anode voltage and the cathode voltage of the diode D1 are lower than the conducting voltage of the diode D1, the diode D1 is turned off, at this time, the first MOS transistor Q1 is completely turned on, and the discharging speed of the gate current of the first MOS transistor Q1 is consistent due to the constant current action of the constant current source in the first constant current switch module, so that the change of the conducting time of the Q1 is not caused by the change of the input voltage.
Other structures are the same as those of embodiment 1, and will not be described here again.
Variations and modifications of the above embodiments will occur to those skilled in the art to which the invention pertains from the foregoing disclosure and teachings. Therefore, the present invention is not limited to the above-described embodiments, but is intended to be capable of modification, substitution or variation in light thereof, which will be apparent to those skilled in the art in light of the present teachings. In addition, although specific terms are used in the present specification, these terms are for convenience of description only and do not limit the present invention in any way.
Claims (6)
1. The P-channel MOS tube driving circuit is characterized by comprising a first MOS tube Q1, a triode Q2, a first resistor R1, a diode D1, a first constant current switch module, a second constant current switch module and a trigger source, wherein the grid electrode of the first MOS tube Q1 is respectively connected with the emitter electrode of the triode Q2 and the first constant current switch module, the drain electrode of the first MOS tube Q1 is connected with a circuit output end, the source electrode of the first MOS tube Q1 is respectively connected with the input end of the circuit and the collector electrode of the triode Q2, the diode D1 is arranged between the emitter electrode of the triode Q2 and the base electrode of the triode Q2, the base electrode of the triode Q2 is respectively connected with the cathode electrode of the diode D1 and the second constant current switch module, the anode electrode of the diode D1 is respectively connected with the grid electrode of the first MOS tube Q1, the emitter electrode of the triode Q2 and the first constant current switch module, the cathode of the diode D1 is respectively connected with the first resistor R1 and the second constant current switch module, and the other end of the triode Q1 is connected with the first constant current switch module and the trigger source;
The first constant current switch module comprises a second resistor R2, a first constant current diode D2 and a second MOS tube Q3 which are sequentially connected, and the model of the first constant current diode D2 is S-103T.
2. The P-channel MOS transistor driving circuit with self-adaptive input voltage as claimed in claim 1, wherein the second constant current switch module comprises a third resistor R3, a second constant current diode D3 and a third MOS transistor Q4 which are sequentially connected.
3. The P-channel MOS transistor driving circuit for self-adapting input voltage as claimed in claim 2, wherein the grid electrode of the second MOS transistor Q3 is connected with the grid electrode of the third MOS transistor Q4, the source electrode of the second MOS transistor Q3 and the source electrode of the third MOS transistor Q4 are grounded, and the drain electrode of the second MOS transistor Q3 and the drain electrode of the third MOS transistor Q4 are respectively connected with the first constant current diode D2 and the second constant current diode D3.
4. The P-channel MOS transistor driving circuit with self-adaptive input voltage as claimed in claim 2, wherein one end of the second resistor R2 is connected with the grid electrode of the first MOS transistor Q1, and the other end of the second resistor R2 is connected with the first constant current diode D2.
5. The P-channel MOS transistor driving circuit with self-adaptive input voltage as claimed in claim 2, wherein one end of the third resistor R3 is connected with the base electrode of the triode Q2, and the other end of the third resistor R3 is connected with the second constant current diode D3.
6. The P-channel MOS transistor driving circuit with self-adaptive input voltage as claimed in claim 2, wherein the second MOS transistor Q3 and the third MOS transistor Q4 are N-channel MOS transistors.
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| CN212627830U (en) * | 2020-07-22 | 2021-02-26 | 广东奥普特科技股份有限公司 | A P-channel MOS transistor drive circuit with adaptive input voltage |
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| US7271626B1 (en) * | 2004-10-27 | 2007-09-18 | National Semiconductor Corporation | Suppression of parasitic ringing at the output of a switched capacitor DC/DC converter |
| KR101254652B1 (en) * | 2006-07-05 | 2013-04-15 | 재단법인서울대학교산학협력재단 | Direct current converting circuit, display apparatus having the same and method of driving the direct current converting circuit |
| CN102005921B (en) * | 2010-11-03 | 2013-02-13 | 无锡中星微电子有限公司 | Voltage-current switching circuit |
| CN102957304B (en) * | 2011-08-29 | 2016-04-27 | 比亚迪股份有限公司 | A kind of drive circuit of triode and driving method thereof |
| CN103379698B (en) * | 2012-04-25 | 2016-05-18 | 海洋王照明科技股份有限公司 | There is the LED constant-current drive circuit of short-circuit protection |
| CN102811536B (en) * | 2012-07-09 | 2015-05-20 | 深圳创维－Rgb电子有限公司 | Constant-current control circuit |
| CN104901541B (en) * | 2015-06-03 | 2017-04-19 | 东南大学 | Switching power supply power tube driven dead band time adaptive control circuit and method thereof |
| CN105048778B (en) * | 2015-07-02 | 2019-01-08 | 南京航空航天大学 | A kind of adaptive cut-off method of power tube applied to high frequency PFC power inverter |
| CN105635389B (en) * | 2016-03-14 | 2019-05-17 | 苏州华兴源创科技股份有限公司 | A kind of IC detection circuit for the driving of Mobile phone touch control screen |
| CN207096857U (en) * | 2017-06-26 | 2018-03-13 | 广东奥普特科技股份有限公司 | A kind of constant-current circuit of amplifier output voltage clamper in driving tube threshold voltage |
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