CN111834465B - Array substrate, display panel and display device - Google Patents

Abstract

The embodiment of the present invention provides an array substrate, a display panel and a display device, wherein the array substrate comprises: a substrate; a transistor, wherein the transistor comprises an active layer disposed on the substrate; and a light shielding component, wherein at least part of the light shielding component is located on the active layer, and the light shielding component covers at least part of the active layer. The array substrate of the embodiment of the present invention can reduce or avoid the photogenerated carriers generated in the channel of the transistor by external light, ensure that the transistor can operate normally and stably, and increase the service life of the array substrate. When the array substrate of the embodiment of the present invention is applied to a display panel, the display panel can be made light-transmissive and displayable, which is convenient for the under-screen integration of the photosensitive component.

Description

Array substrate, display panel and display device

Technical Field

The present invention relates to the technical field of display equipment, and in particular to an array substrate, a display panel and a display device.

Background technique

With the rapid development of electronic devices, users have higher and higher requirements for screen-to-body ratio, making the full-screen display of electronic devices receive more and more attention in the industry.

Traditional electronic devices such as mobile phones and tablets need to integrate front cameras, receivers, and infrared sensors. In the prior art, notches or holes can be made on the display screen, and external light can enter the photosensitive element below the screen through the notches or holes on the screen. However, these electronic devices are not true full screens and cannot display in all areas of the entire screen. For example, the area corresponding to the front camera cannot display images.

Summary of the invention

The embodiments of the present invention provide an array substrate, a display panel and a display device, which enable the display panel to be light-transmissive and capable of displaying, and facilitate under-screen integration of photosensitive components.

On the one hand, an embodiment of the present invention provides an array substrate, comprising: a substrate; a transistor, the transistor comprising an active layer disposed on the substrate; a light shielding component, at least part of the light shielding component is located on the active layer, and the light shielding component covers at least part of the active layer. The light shielding component can effectively reduce the amount of light reaching the active layer, thereby reducing or avoiding the photogenerated carriers generated by external light in the channel of the transistor, ensuring that the transistor can operate normally and stably, and improving the service life of the array substrate.

According to an embodiment of one aspect of the present invention, the light shielding member includes a first shielding portion and a second shielding portion, the first shielding portion is located on the active layer, and the second shielding portion is formed by the first shielding portion protruding toward the substrate;

Preferably, the second shielding portion is connected to the peripheral side of the first shielding portion;

Preferably, the second shielding portion extends from the first shielding portion to the substrate.

According to any of the aforementioned embodiments in one aspect of the present invention, the transistor further includes a first dielectric layer and a gate layer sequentially located on the active layer, and at least a portion of the light shielding component is located on the gate layer.

According to any of the aforementioned embodiments in one aspect of the present invention, the material of the light shielding component includes a metal material, or the material of the light shielding component is an insulating light shielding material.

According to any of the aforementioned embodiments of one aspect of the present invention, the array substrate further comprises a metal layer located on the gate layer;

When the light shielding component is made of metal material, at least part of the light shielding component and the metal layer are arranged on the same layer.

According to any of the aforementioned embodiments in one aspect of the present invention, the metal layer includes a capacitor plate layer located on the gate layer, and at least part of the light shielding component and the capacitor plate layer are arranged in the same layer.

According to any of the aforementioned embodiments of one aspect of the present invention, the light shielding component and the capacitor plate layer are formed in the same process step;

Preferably, the metal layer further includes a source-drain electrode layer located on the capacitor plate layer, the transistor includes a source-drain electrode conductor arranged on the source-drain electrode layer, and a second through hole is opened on the light shielding component so that the source-drain electrode conductor passes through the second through hole and is connected to the active layer;

Further preferably, an inner wall of the light shielding member facing the second through hole is coated with an insulating layer to ensure mutual insulation between the light shielding member and the source-drain electrode conductors.

According to any of the aforementioned embodiments in one aspect of the present invention, the metal layer includes a source-drain electrode layer located on the gate layer, and the transistor includes a source-drain electrode conductor disposed in the source-drain electrode layer;

The material of the light shielding component includes a metal material, and at least a part of the light shielding component and the source-drain electrode layer are arranged in the same layer.

According to any one of the aforementioned embodiments in one aspect of the present invention, the light shielding member and the source-drain electrode layer are formed in a process step.

According to any of the aforementioned embodiments of one aspect of the present invention, the array substrate further comprises a source-drain electrode layer located on the gate layer;

When the material of the light shielding component is an insulating light shielding material, at least a part of the light shielding component and the source-drain electrode layer are arranged adjacent to each other.

On the other hand, an embodiment of the present invention further provides a display panel, the display panel having at least a light-transmitting display area, and the display panel includes:

The array substrate is located in the light-transmitting display area;

The light emitting device is arranged on the array substrate and is located on the side of the light shielding component away from the active layer.

On the other hand, an embodiment of the present invention further provides a display device, including the above-mentioned array substrate.

In the array substrate of the embodiment of the present invention, the array substrate includes a substrate, a transistor and a light shielding component, and the light shielding component covers at least a portion of the active layer of the transistor. Therefore, the light transmitted from the side of the light shielding component away from the active layer first passes through the light shielding component before reaching the active layer. In the array substrate of the embodiment of the present invention, the light shielding component can effectively reduce the amount of light reaching the active layer, thereby reducing or avoiding the photogenerated carriers generated by external light in the channel of the transistor, ensuring that the transistor can operate normally and stably, and improving the service life of the array substrate. When the array substrate of the embodiment of the present invention is applied to a display panel, it can realize that the display panel is light-transmissive and displayable, which is convenient for the under-screen integration of the photosensitive component.

BRIEF DESCRIPTION OF THE DRAWINGS

Other features, objects and advantages of the present invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings, in which the same or similar reference numerals represent the same or similar features.

FIG1 is a schematic structural diagram of a display panel provided by an embodiment of the present invention;

FIG2 is a partial cross-sectional view of a display panel provided by an embodiment of the present invention;

FIG3 is a partial cross-sectional view of an array substrate provided by an embodiment of the present invention;

FIG4 is a partial cross-sectional view of an array substrate provided by another embodiment of the present invention;

FIG5 is a partial cross-sectional view of an array substrate provided in yet another embodiment of the present invention;

FIG. 6 is a partial cross-sectional view of an array substrate provided in yet another embodiment of the present invention.

Description of reference numerals:

10. substrate; 20. metal layer; 21. capacitor plate layer; 22. source and drain electrode layer;

100. Transistor;

110, active layer; 120, first dielectric layer; 130, gate layer; 140, source-drain electrode conductor; 141, source electrode conductor; 142, drain electrode conductor;

200, light shielding member; 200a, first light shielding member; 200b, second light shielding member;

210, first shielding portion; 211, first through hole; 212, second through hole; 220, second shielding portion; 230, insulating layer;

300, light-emitting device; 310, first electrode; 320, light-emitting structure; 330, second electrode.

400, connecting leads;

500, a second dielectric layer;

600. Third dielectric layer.

Detailed ways

The features and exemplary embodiments of various aspects of the present invention will be described in detail below. In the detailed description below, many specific details are presented in order to provide a comprehensive understanding of the present invention. However, it is obvious to those skilled in the art that the present invention can be implemented without the need for some of these specific details. The following description of the embodiments is merely to provide a better understanding of the present invention by illustrating examples of the present invention. In the drawings and the following description, at least some of the known structures and techniques are not shown in order to avoid unnecessary ambiguity of the present invention; and, for clarity, the size of some structures may be exaggerated. In addition, the features, structures or characteristics described below may be combined in one or more embodiments in any suitable manner.

In the description of the present invention, it should be noted that, unless otherwise specified, "plurality" means more than two; the directions or positional relationships indicated by the terms "upper", "lower", "left", "right", "inner", "outer", etc. are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying relative importance.

The directional words appearing in the following description are all directions shown in the figures, and do not limit the specific structure of the embodiments of the present invention. In the description of the present invention, it should also be noted that, unless otherwise clearly specified and limited, the terms "installation" and "connection" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances.

On electronic devices such as mobile phones and tablet computers, it is necessary to integrate photosensitive components such as a front camera, an infrared light sensor, a proximity light sensor, etc. on one side of the display panel. In some embodiments, a light-transmitting display area can be provided on the above electronic device, and the photosensitive component can be provided on the back of the light-transmitting display area, so as to realize full-screen display of the electronic device while ensuring the normal operation of the photosensitive component.

In the light-transmitting display area, due to the high light transmittance of the light-transmitting display area, external light can pass through the light-emitting device and illuminate the thin-film transistor emitted by the light-emitting device, which may induce the generation of photogenerated carriers in the channel of the thin-film transistor, causing the stability of the thin-film transistor to be affected, thereby reducing the service life of the display panel.

In order to solve the above problems, embodiments of the present invention provide an array substrate, a display panel and a display device. Embodiments of the display panel and the display device will be described below in conjunction with the accompanying drawings.

The present invention provides a display device, which includes a display panel. The display device can be, but is not limited to, electronic devices such as mobile phones and tablet computers.

There are many ways to set up the display panel. In some optional embodiments, as shown in Figure 1, the display panel includes a first display area AA1 and a second display area AA2. The transmittance of the first display area AA1 is greater than the transmittance of the second display area AA2, that is, the first display area AA1 is a light-transmitting display area.

The first display area AA1 can be configured in various shapes, such as a circular, rectangular or other irregular shapes. The first display area AA1 can be configured in various positions, such as the first display area AA1 being located in the middle area at the top of the display panel, or the first display area AA1 being close to a corner area of the display panel.

Herein, the transmittance of the first display area AA1 is greater than or equal to 15%. To ensure that the transmittance of the first display area AA1 is greater than 15%, even greater than 40%, or even higher, the transmittance of each functional film layer of the first display area AA1 in this embodiment is greater than 80%, and even the transmittance of at least some functional film layers is greater than 90%.

According to the first display area AA1 of the embodiment of the present invention, the transmittance of the first display area AA1 is greater than 15%, so that a photosensitive component can be integrated on the back of the first display area AA1, so as to realize under-screen integration of a photosensitive component of a camera, and at the same time, the first display area AA1 can also display images, so as to realize a full-screen design of a display panel or a display device.

In some other optional embodiments, the display panel is a whole light-transmitting display panel, that is, the display panel includes the first display area AA1, but does not include the second display area AA2. That is, the display panel only includes the light-transmitting display area, but does not include the non-light-transmitting display area.

2 is a schematic diagram of the structure of a display panel provided by an embodiment of the present invention, the display panel comprises: an array substrate located in the first display area AA1, that is, located in the light-transmitting display area; and a light-emitting device 300 disposed on the array substrate.

The light emitting device 300 includes, for example, a first electrode 310 , a light emitting structure 320 and a second electrode 330 .

The shape of the light-emitting structure 320 is not limited. In some optional embodiments, the orthographic projection of each light-emitting structure 320 on the substrate 10 is composed of one first graphic unit or two or more first graphic units. The first graphic unit includes at least one selected from the group consisting of a circle, an ellipse, a dumbbell, a gourd, and a rectangle, which can reduce the diffraction of the translucent display panel.

The shape of the first electrode 310 is not limited. In some optional embodiments, the orthographic projection of each first electrode 310 on the substrate 10 is composed of one second graphic unit or is composed of two or more second graphic units. The second graphic unit includes at least one selected from the group consisting of a circle, an ellipse, a dumbbell, a gourd, and a rectangle, which can reduce the diffraction of the translucent display panel.

In some embodiments, the first electrode 310 is a light-transmitting electrode. In some embodiments, the first electrode 310 includes an indium tin oxide (ITO) layer or an indium zinc oxide layer. In some embodiments, the first electrode 310 is a reflective electrode, including a first light-transmitting conductive layer, a reflective layer located on the first light-transmitting conductive layer, and a second light-transmitting conductive layer located on the reflective layer. The first light-transmitting conductive layer and the second light-transmitting conductive layer may be ITO, indium zinc oxide, etc., and the reflective layer may be a metal layer 20, for example, made of silver. In some embodiments, the second electrode 330 includes a magnesium-silver alloy layer.

The present invention further provides an array substrate, which can be used for the above-mentioned display panel. According to an array substrate of an embodiment of the present invention, the array substrate includes a substrate 10; a transistor 100, the transistor 100 includes an active layer 110 disposed on the substrate 10; and a light shielding member 200, at least part of the light shielding member 200 is located on the active layer 110, and the light shielding member 200 covers at least part of the active layer 110. In the display panel, the light emitting device 300 is located on a side of the light shielding member 200 away from the active layer 110.

In an array substrate of an embodiment of the present invention, the array substrate includes a substrate 10, a transistor 100 and a light shielding component 200, and the light shielding component 200 covers at least a portion of the active layer 110 of the transistor 100. Therefore, the light transmitted from the side of the light shielding component 200 away from the active layer 110 first passes through the light shielding component 200, and then reaches the active layer 110. In the array substrate of the embodiment of the present invention, the light shielding component 200 can effectively reduce the amount of light reaching the active layer 110, thereby reducing or avoiding the photogenerated carriers generated by external light in the channel of the transistor 100, ensuring that the transistor 100 can operate normally and stably, and improving the service life of the array substrate. When the array substrate of the embodiment of the present invention is applied to a display panel, the display panel can be transparent and displayable, which is convenient for the under-screen integration of the photosensitive component.

It is understandable that the photosensitive component may not be limited to an image acquisition device. For example, in some embodiments, the photosensitive component may also be an infrared sensor, a proximity sensor, an infrared lens, a floodlight sensing element, an ambient light sensor, a dot projector, or other optical sensors. In addition, the display device may also integrate other components on the lower surface of the display panel, such as an earpiece, a speaker, etc.

The light shielding member 200 has a low light transmittance so that the light shielding member 200 can block light from entering the active layer 110. For example, the light transmittance of the light shielding member 200 is less than 40%. Preferably, the light transmittance of the light shielding member 200 is 40%, 30%, 20% or lower. For example, when the light shielding member 200 is made of an organic insulating material, the light transmittance of the light shielding member 200 is 20% to 30%. When the light shielding member 200 is made of a metal material, the light shielding member 200 is opaque.

At least part of the light-shielding component 200 covers at least part of the active layer 110, which means that in the thickness direction of the array substrate (the X direction in FIG. 3 ), the orthographic projection of the light-shielding component 200 covers at least part of the orthographic projection of the active layer 110. It can be understood that the orthographic projection of the light-shielding component 200 can completely cover the orthographic projection of the active layer 110, the orthographic projection area of the light-shielding component 200 on the substrate 10 is greater than or equal to the orthographic projection area of the active layer 110 on the substrate 10, and the orthographic projection area of the active layer 110 on the substrate 10 is located within the orthographic projection area of the light-shielding component 200 on the substrate 10, wherein an optional structure is shown in FIG. 3 . The orthographic projection of the light-shielding component 200 can also cover part of the orthographic projection of the active layer 110, wherein an optional structure is shown in FIG. 3 . The orthographic projection area of the light-shielding component 200 on the substrate 10 means that the area within the outer edge of the orthographic projection of the light-shielding component 200 on the substrate 10 belongs to the orthographic projection area of the light-shielding component 200 on the substrate 10

The light shielding member 200 may be arranged in a variety of shapes, for example, the light shielding member 200 and the active layer 110 are arranged at intervals along the thickness direction, and the orthographic projection area of the light shielding member 200 on the substrate 10 is greater than or equal to the orthographic projection area of the active layer 110 on the substrate 10. In these optional embodiments, the light shielding member 200 can block external light that vertically enters the active layer 110 along the thickness direction, thereby preventing this part of the light from affecting the normal operation of the transistor 100.

In some other optional embodiments, the shading component 200 includes a first shading portion 210 and a second shading portion 220 , wherein the first shading portion 210 is located on a side of the active layer 110 away from the substrate 10 , and the second shading portion 220 is formed by the first shading portion 210 protruding toward the substrate 10 .

In some embodiments, the light shielding member 200 can be covered above the active layer 110 through the first shielding portion 210 and the second shielding portion 220. The light shielding member 200 can shield the external light vertically incident on the active layer 110 along the thickness direction through the first shielding portion 210, and the light shielding member 200 can shield the external light incident on the active layer 110 from the side through the second shielding portion 220, thereby improving the light shielding effect of the light shielding member 200 and further ensuring the stable operation of the transistor 100.

There are many ways to dispose the second shielding portion 220 . For example, the second shielding portions 220 are distributed at intervals around the first shielding portion 210 .

Preferably, the second shielding portion 220 is connected to the peripheral side of the first shielding portion 210, that is, the second shielding portion 220 is continuously distributed on the peripheral side of the first shielding portion 210. The second shielding portion 220 can shield the light incident obliquely relative to the thickness direction at different positions on the peripheral side of the active layer 110, further improving the light shielding effect of the light shielding component 200.

In some other optional embodiments, the second shielding portion 220 extends from the first shielding portion 210 to the substrate 10. The light shielding component 200 is covered above the active layer 110 by the first shielding portion 210 and the second shielding portion 220, so as to further improve the light shielding effect of the light shielding component 200.

There are many ways to extend the second shielding portion 220 to the substrate 10. For example, during the molding process of the array substrate, during the formation of the intermediate layer between the substrate 10 and the first shielding portion 210, a through hole is opened in the intermediate layer at a position corresponding to the second shielding portion 220, so that when the first shielding portion 210 is formed, the material penetrates into the through hole, thereby forming the second shielding portion 220 in the through hole.

In some optional embodiments, the transistor 100 further includes a first dielectric layer 120 and a gate layer 130 sequentially located on the active layer 110, and at least part of the light shielding component 200 is located on the gate layer 130. In these optional embodiments, the light shielding component 200 is located on the gate layer 130, that is, the light shielding component 200 is located on the active layer 110, the first dielectric layer 120 and the gate layer 130, which can prevent the light shielding component 200 from affecting the normal operation of the transistor 100.

There are many ways to set up the transistor 100. The transistor 100 can be a bottom-gate transistor or a top-gate transistor. The bottom-gate transistor, that is, the gate layer 130 is located below the active layer 110, that is, the gate layer 130 is located on the side of the active layer 110 facing the substrate 10. The top-gate transistor 100, that is, the gate layer 130 is located above the active layer 110, that is, the gate layer 130 is located on the side of the active layer 110 facing away from the substrate 10. As shown in Figures 3 to 6, this article takes a top-gate transistor as an example to illustrate the array substrate of an embodiment of the present invention.

There are many choices of materials for the light shielding component 200. In some optional embodiments, the material of the light shielding component 200 is an insulating light shielding material, such as an organic insulating light shielding material; or, the material of the light shielding component 200 includes a metal material.

In some optional embodiments, the array substrate further includes a metal layer 20 located on the gate layer 130; when the light shielding component 200 is made of a metal material, at least part of the light shielding component 200 and the metal layer 20 are arranged in the same layer, for example, the first shielding portion 210 and the metal layer 20 are arranged in the same layer. Further, the light shielding component 200 and the metal layer 20 can be formed in the same process step.

In these embodiments, the material of the light shielding component 200 is a metal material, so at least part of the light shielding component 200 can be provided in the same layer as the metal layer 20, and the light shielding component 200 and the metal layer 20 are formed simultaneously. In the same process step of forming the metal layer 20, for example, by changing the shape of the mask plate, the light shielding component 200 can be formed at the corresponding position, thereby simplifying the molding process of the array substrate.

The metal layer 20, for example, includes a capacitor plate layer 21 located on the gate layer 130, and at least part of the light shielding component 200 and the capacitor plate layer 21 are arranged in the same layer, for example, the first light shielding portion 210 and the capacitor plate layer 21 are arranged in the same layer. Further, the light shielding component 200 and the capacitor plate layer 21 are in the same process step, and the light shielding component 200 and the capacitor plate layer 21 are formed at the same time.

The capacitor plate layer 21 includes capacitor plates. When the capacitor plate layer 21 is patterned to form the capacitor plates, the light shielding component 200 can be formed simultaneously. There is no need to add a separate process step for forming the light shielding component 200, which can simplify the molding method of the array substrate.

There are many ways to set at least part of the shading component 200 and the capacitor plate layer 21 in the same layer. In some optional embodiments, at least part of the shading component 200 and the capacitor plate are spaced apart in the capacitor plate layer 21, or at least part of the shading component 200 is connected to the capacitor plate.

In some optional embodiments, as shown in FIG3 , the metal layer 20 includes a source-drain electrode layer 22 located on the capacitor plate layer 21, and a third dielectric layer 600 is further provided between the capacitor plate layer 21 and the gate layer 130. Preferably, the third dielectric layer 600 is made of an insulating material to ensure that the capacitor plate layer 21 and the gate layer 130 are insulated from each other.

In some optional embodiments, the transistor 100 includes a source-drain electrode conductor 140 disposed in the source-drain electrode layer 22 , and the source-drain electrode conductor 140 is connected to the active layer 110 .

When at least part of the light shielding component 200 is disposed on the capacitor plate layer 21, the light shielding component 200 is provided with a second through hole 212, so that the source-drain electrode conductor 140 passes through the second through hole 212 to connect to the active layer 110. For example, when the first shielding portion 210 is disposed on the capacitor plate layer 21, the first shielding portion 210 is provided with a second through hole 212, so that the source-drain electrode conductor 140 passes through the second through hole 212 to connect to the active layer 110.

The source-drain electrode conductor 140 includes a source electrode conductor 141 and a drain electrode conductor 142 . The source electrode conductor 141 is connected to the source terminal of the active layer 110 , and the drain electrode conductor 142 is connected to the drain terminal of the active layer 110 .

Further preferably, the inner wall of the light shielding member 200 facing the second through hole 212 is coated with an insulating layer 230 to ensure mutual insulation between the light shielding member 200 and the source-drain electrode conductor 140 .

When the light shielding component 200 includes the first shielding portion 210 and the second shielding portion 220, the first shielding portion 210 is located at the capacitor plate layer 21, and the second shielding portion 220 is formed by extending from the first shielding portion 210 toward the substrate 10, that is, the second shielding portion 220 is formed by extending from the capacitor plate layer 21 toward the substrate 10. Preferably, the second shielding portion 220 extends from the capacitor plate layer 21 to the substrate 10.

Please refer to Figure 4, which is a partial cross-sectional view of an array substrate provided by another embodiment of the present invention. In other optional embodiments, the material of the shading component 200 is a metal material, and at least part of the shading component 200 and the source-drain electrode layer 22 are arranged in the same layer. Furthermore, the shading component 200 and the source-drain electrode layer 22 are formed in the same process step, that is, the shading component 200 and the source-drain electrode layer 22 are formed at the same time. For example, the first shielding portion 210 of the shading component 200 is arranged in the source-drain electrode layer 22. The transistor 100 includes a source-drain electrode conductor 140 arranged in the source-drain electrode layer 22, and a portion of the source-drain electrode conductor 140 can be used as a part of the shading component 200, that is, forming the first shielding portion 210.

In these embodiments, the material of the source-drain electrode conductor 140 generally includes a light-shielding metal material. The light-shielding component 200 is connected to the source-drain electrode conductor 140. The source-drain electrode conductor 140 takes on a part of the light-shielding effect, which can reduce the area of the shielding component 200 and save materials.

When the light shielding component 200 includes the first shielding portion 210 and the second shielding portion 220, the first shielding portion 210 is located at the source-drain electrode layer 22, that is, the first shielding portion 210 is connected to the source-drain electrode conductor 140, and the second shielding portion 220 is formed by extending from the first shielding portion 210 toward the substrate 10, that is, the second shielding portion 220 is formed by extending from the source-drain electrode layer 22 toward the substrate 10. Preferably, the second shielding portion 220 extends from the source-drain electrode layer 22 to the substrate 10.

Please refer to FIG. 5 and FIG. 6 . FIG. 5 is a partial cross-sectional view of an array substrate provided by another embodiment of the present invention. FIG. 6 is a partial cross-sectional view of an array substrate provided by another embodiment of the present invention.

In some other optional embodiments, when the material of the light shielding component 200 is an insulating material, at least part of the light shielding component 200 can be located on the active layer 110 and the gate layer 130, and under the capacitor plate layer 21. When the transistor 100 is a top-gate transistor 100, at least part of the light shielding component 200 can be located between the gate layer 130 and the capacitor plate layer 21. Or at least part of the light shielding component 200 can be located between the capacitor plate layer 21 and the source-drain electrode layer 22, or at least part of the light shielding component 200 is located on the source-drain electrode layer 22.

When the light shielding component 200 includes a first shielding portion 210 and a second shielding portion 220, at least part of the light shielding component 200 refers to the first shielding portion 210, that is, the first shielding portion 210 can be located on the active layer 110 and the gate layer 130, and under the capacitor plate layer 21. When the transistor 100 is a top-gate transistor 100, the first shielding portion 210 can be located between the gate layer 130 and the capacitor plate layer 21. Alternatively, the first shielding portion 210 can be located between the capacitor plate layer 21 and the source-drain electrode layer 22, or the first shielding portion 210 is located on the source-drain electrode layer 22.

In some optional embodiments, when the array substrate includes a source-drain electrode layer 22 located on the gate layer 130 and the light shielding component 200 is made of an insulating material, at least a portion of the light shielding component 200 and the source-drain electrode layer 22 are disposed adjacent to each other.

In these embodiments, when the array substrate includes a source-drain electrode layer 22, the dielectric layer between the source-drain electrode layer 22 and the gate layer 130, and the first dielectric layer 120 between the gate layer 130 and the active layer 110 are generally inorganic dielectric layers formed of inorganic insulating materials. The inorganic dielectric layer is generally formed of inorganic insulating materials using a high-temperature process. At least part of the shading component 200 is disposed adjacent to the source-drain electrode layer 22, that is, at least part of the shading component 200 is located under the source-drain electrode layer 22 or at least part of the shading component 200 is located on the source-drain electrode layer 22, so that during the molding process of the array substrate, the shading component 200 can be formed after the inorganic dielectric layer, thereby effectively avoiding the influence of the high-temperature process on the shape of the shading component 200, and ensuring the shading effect of the shading component 200.

For example, a second dielectric layer 500 is provided between the capacitor plate layer 21 and the source-drain electrode layer 22. The second dielectric layer 500 is an inorganic insulating dielectric layer, and the second dielectric layer 500 is formed by a high-temperature process. As shown in FIG6 , at least part of the light shielding component 200 is located between the source-drain electrode layer 22 and the second dielectric layer 500, for example, the first shielding portion 210 is located between the source-drain electrode layer 22 and the second dielectric layer 500; or as shown in FIG5 , at least part of the light shielding component 200 is located on the source-drain electrode layer 22, for example, the first shielding portion 210 is located on the source-drain electrode layer 22. By forming the light shielding component 200 after forming the second dielectric layer 500, it is possible to avoid the high-temperature process from affecting the shape of the light shielding component 200, and prevent the light shielding component 200 from melting and deforming due to heat.

In some optional embodiments, the transistor 100 includes a first transistor and a second transistor. The first transistor is, for example, a driving transistor, and the second transistor is, for example, a switching transistor. The light emitting device 300 includes a first electrode 310, and the first electrode 310 is connected to the first transistor through a connecting wire 400, so that the first transistor can drive the first electrode 310.

When the material of the light shielding component 200 is an insulating material, and the light shielding component 200 is disposed on the source-drain electrode layer 22, the light shielding component 200 includes a first light shielding component 200a corresponding to the first transistor and a second light shielding component 200b corresponding to the second transistor, and the first light shielding component 200a is provided with a first through hole 211, so that the connecting lead 400 passes through the first through hole 211 and is connected between the first electrode 310 and the first transistor. This prevents the light shielding component 200 from affecting the mutual connection between the first electrode 310 and the first transistor. For example, the first shielding portion 210 is provided with a first through hole 211, so that the connecting lead 400 passes through the first through hole 211 and is connected between the first electrode 310 and the first transistor.

When the shading component 200 is disposed under the source-drain electrode layer 22 , a second through hole 212 is opened on the shading component 200 , for example, a second through hole 212 is opened on the first blocking portion 210 , so that the source-drain electrode conductor 140 of the source-drain electrode layer 22 passes through the second through hole 212 and is connected to the active layer 110 .

In any of the above embodiments, when there are multiple light shielding components 200, the multiple light shielding components 200 may be arranged in the same or different manners. For example, among the multiple light shielding components 200, the material of some of the light shielding components 200 is an insulating material, and the material of another part of the light shielding components 200 includes a metal material. Or when the materials of the multiple light shielding components 200 all include a metal material, some of the light shielding components 200 and the capacitor plate layer 21 are arranged in the same layer, and another part of the light shielding components 200 and the source-drain electrode layer 22 are arranged in the same layer.

Although the present application has been described with reference to preferred embodiments, various modifications may be made thereto and parts thereof may be replaced with equivalents without departing from the scope of the present application. In particular, the various technical features mentioned in the various embodiments may be combined in any manner as long as there are no structural conflicts. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims (15)

1. An array substrate, comprising: substrate; A transistor, the transistor comprising an active layer disposed on the substrate, the transistor further comprising a first dielectric layer, a gate layer and a source-drain electrode conductor sequentially disposed on the active layer; A second dielectric layer is disposed on the gate layer, wherein the source-drain electrode conductor is disposed on the second dielectric layer and passes through the second dielectric layer and the first dielectric layer to be connected to the active layer; A shading component is arranged on the second dielectric layer and includes a first shading portion and a second shading portion, wherein the second shading portion is formed by the first shading portion protruding toward the substrate, wherein the second shading portion passes through the second dielectric layer and the first dielectric layer to be connected to the substrate, at least a portion of the shading component is located on the active layer, and the shading component covers at least a portion of the active layer. 2 . The array substrate according to claim 1 , wherein the first shielding portion is located on the active layer. 3 . 3 . The array substrate according to claim 2 , wherein the second shielding portion is connected to a peripheral side of the first shielding portion. 4 . The array substrate according to claim 1 , wherein at least a portion of the light shielding component is located on the gate layer. 5 . The array substrate according to claim 4 , wherein the material of the light shielding component comprises a metal material, or the material of the light shielding component is an insulating light shielding material. 6. The array substrate according to claim 5, characterized in that: The array substrate further comprises a metal layer located on the gate layer; When the light shielding component is made of metal material, at least part of the light shielding component and the metal layer are arranged in the same layer. 7. The array substrate according to claim 6, characterized in that: The metal layer includes a source-drain electrode layer located on the gate layer; At least part of the light shielding component and the source-drain electrode layer are arranged in the same layer. 8 . The array substrate according to claim 7 , wherein the light shielding component and the source-drain electrode layer are formed in the same process step. 9. The array substrate according to claim 5, characterized in that: The array substrate further comprises a source-drain electrode layer located on the gate layer; When the light shielding component is made of an insulating light shielding material, at least a portion of the light shielding component and the source-drain electrode layer are disposed adjacent to each other. 10. An array substrate, comprising: substrate; A transistor, the transistor comprising an active layer disposed on the substrate, the transistor further comprising a first dielectric layer, a gate layer and a source-drain electrode conductor sequentially disposed on the active layer; A light shielding component, comprising a first shielding portion and a second shielding portion, wherein the second shielding portion is formed by the first shielding portion protruding toward the substrate, at least part of the light shielding component is located on the active layer and the gate layer, and the light shielding component covers at least part of the active layer, and the material of the light shielding component is a metal material; A metal layer is located on the gate layer, the metal layer includes a capacitor plate layer located on the gate layer, and at least part of the light shielding component and the capacitor plate layer are arranged in the same layer; The third dielectric layer is arranged between the capacitor plate layer and the gate layer, the source-drain electrode conductor is arranged on the third dielectric layer and passes through the third dielectric layer and the first dielectric layer to be connected to the active layer, and the second shielding portion passes through the third dielectric layer and the first dielectric layer to be connected to the substrate. 11 . The array substrate according to claim 10 , wherein the light shielding component and the capacitor plate layer are formed in the same process step. 12. The array substrate according to claim 10 is characterized in that the source-drain electrode layer is located on the capacitor plate layer, the transistor includes the source-drain electrode conductor arranged on the source-drain electrode layer, and a second through hole is opened on the shading component so that the source-drain electrode conductor passes through the second through hole to be connected to the active layer. 13 . The array substrate according to claim 12 , wherein an inner wall of the light shielding member facing the second through hole is coated with an insulating layer to ensure mutual insulation between the light shielding member and the source-drain electrode conductor. 14. A display panel, characterized in that the display panel has at least a light-transmitting display area, and the display panel comprises: The array substrate according to any one of claims 1 to 13, located in the light-transmitting display area; The light emitting device is arranged on the array substrate and is located on a side of the light shielding component away from the active layer. 15. A display device, characterized by comprising the array substrate according to any one of claims 1 to 13.