CN111817015B - High-isolation double-channel super-surface unit and super-surface - Google Patents
High-isolation double-channel super-surface unit and super-surface Download PDFInfo
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- CN111817015B CN111817015B CN202010782204.0A CN202010782204A CN111817015B CN 111817015 B CN111817015 B CN 111817015B CN 202010782204 A CN202010782204 A CN 202010782204A CN 111817015 B CN111817015 B CN 111817015B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
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Abstract
The invention provides a double-channel super-surface unit with high isolation, which consists of a driving module and a parasitic layer. The driving module comprises a feed network layer, a metal ground, a driving patch and two layers of dielectric plates; and the parasitic layer includes a parasitic patch and a dielectric plate. The unit can work in two channels simultaneously and switch different working states of the unit in different channels in real time through the PIN tube. The invention combines the two aspects of polarization verticality and frequency band staggering, improves the isolation degree when two channels work simultaneously, and avoids mutual interference. Meanwhile, the invention can be used as an independent antenna, and the super surface formed by the antenna can be used for realizing the real-time independent regulation and control of double channels, thereby greatly improving the isolation and the flexibility of satellite communication and radar systems. In addition, the invention replaces the conventional air feed technology commonly used for the super surface with the side feed technology, reduces the section, saves the space, is convenient to integrate with the existing microwave circuit, and has good application prospect.
Description
Technical Field
The invention relates to a double-channel super-surface unit with high isolation, belonging to the field of communication and novel artificial electromagnetic materials.
Background
With the continuous development of communication technology, various microstrip patch antenna and phased array technologies with multi-band, multi-polarization and real-time control functions are presented, so as to meet the requirements of flexibility and low cost in communication. However, the multi-channel operation increases the channel capacity and widens the frequency band, and meanwhile, the problems of insufficient channel isolation and the like also occur. Therefore, this problem is solved to some extent by introducing metal side walls, asymmetric feeding, utilizing narrowband resonance, etc. However, these methods also have problems such as narrow bandwidth and large volume, and cannot control different operating frequency bands and polarizations in real time.
The proposal of the novel artificial electromagnetic super surface provides a new thought for solving the problem, can realize multiple functions such as beam splitting, beam scanning, imaging, stealth and the like by arranging units with limited discrete phase states, can regulate and control the artificial electromagnetic super surface in real time through coding by introducing a PIN tube, has extremely strong flexibility, and reduces a large amount of use of expensive T/R components, thereby greatly reducing the cost. However, most artificial electromagnetic supersurfaces are fed by waveguides or horn antennas, and are bulky and difficult to integrate with common radio frequency circuits.
Disclosure of Invention
Technical problems: in order to solve the defects in the prior art, the invention provides a double-channel super-surface unit with high isolation, which can work in two channels at the same time, and the isolation of the two channels during the simultaneous work is improved by adopting a method of combining polarization verticality and frequency band isolation. The two working states of the two channels can be switched in real time through the PIN tube, meanwhile, the working frequency band is widened due to the introduction of the parasitic patch, and the parasitic patch is more suitable for the existing radio frequency circuit system and is easy to integrate. In addition, the super surface formed by the units can independently control two channels in real time, and has wide application prospect.
The technical scheme is as follows: the invention provides a high-isolation double-channel super-surface unit, which comprises a driving module and a parasitic layer positioned above the driving module, wherein the driving module and the parasitic layer are connected through four plastic columns, and the driving module comprises five layers of structures from bottom to top: the feeding network layer (1), the first dielectric plate, the metal ground (2), the second dielectric plate and the driving patch (3), wherein the parasitic layer is composed of a third dielectric plate and the parasitic patch (4) printed on the third dielectric plate, the parasitic patch is a metal patch, and the shape of the metal patch is not limited, for example, the parasitic patch can be any shape such as rectangle, diamond, circle and the like. The feed network layer is located the lower surface of first dielectric plate, and metal ground (2) are located the upper surface of first dielectric plate, and the second dielectric plate is located the upper surface of metal ground, and drive paster (3) are located the upper surface of second dielectric plate.
In order to ensure normal feeding, a feed network layer at the bottom layer of a driving module is communicated with a driving patch at the top layer through four metal through holes, corresponding round holes are dug in the middle of a first dielectric plate, a second dielectric plate and a metal ground to ensure that the four metal through holes can normally pass through, energy is fed in from a microstrip port in the bottom layer feed network layer, the driving patch at the top end is reached along the metal through holes, electromagnetic waves emitted by the excited driving patch reach a parasitic layer through air, resonance of the parasitic patch is excited, and information is transmitted outwards.
The driving patch is composed of a metal patch and four bulges, the four bulges are respectively positioned at the midpoints of four sides of the rectangle and used for realizing impedance matching, and the positions of the four metal through holes are respectively positioned at the midpoints of the four sides of the driving patch.
Meanwhile, in order to facilitate connection of the cathode of the PIN tube, the center of the driving patch is also connected with the metal ground through a metal via hole. Corresponding round holes are dug out in the middle of the two layers of dielectric plates and the metal ground so as to ensure that four metal through holes at the edge and one metal through hole in the center can normally pass through.
The feed network layer (1) comprises four groups of choke structures, filter structures and microstrip lines which are arranged on the lower surface of the first dielectric plate; four through holes are formed in the first dielectric plate, and the four metal through holes on the edge of the rectangular metal patch penetrate through the metal ground (2), the second dielectric plate and the metal ground (2) to be communicated with the four through holes in the first dielectric plate;
The first ends of the microstrip lines in each group are respectively connected with the edges of the lower surface of the first dielectric plate, the choke structures and the filter structures in each group are connected with each microstrip line, the second ends of the microstrip lines in each group are connected with the through holes on the first dielectric plate through PIN diodes, and the PIN diodes are communicated with the choke structures; the first channel is formed by two groups of choke structures, filter structures and microstrip lines in the horizontal direction of the driving patch (3) and the feeding network layer (1), and two metal through holes in the horizontal direction, which are connected with the first dielectric plate and the rectangular metal patch; the second channel is formed by two groups of choke structures, filter structures and microstrip lines in the vertical direction in the driving patch (3) and the feed network layer (1), and two metal through holes in the vertical direction, which are connected with the first dielectric plate and the rectangular metal patch.
The filtering structure can be an existing filtering structure such as a high-low impedance line filtering structure, a hairpin filtering structure, a parallel coupling line filtering structure, an interdigital filtering structure and the like; the choke structure may be any other existing choke structure such as a choke coil.
The beneficial effects are that: compared with the prior art, the technical scheme of the invention has the following beneficial technical effects:
(1) The invention can work in two channels at the same time, has dual-frequency dual-polarization characteristic, and by introducing PIN tubes, two operating states ("0" and "1") whose initial phases differ by 180 degrees can be switched in real time in the two channels, respectively.
(2) The invention combines the two aspects of polarization verticality and frequency band staggering to improve the isolation, introduces an artificial surface plasmon structure in the feed network layer, plays a role of filtering, and reduces crosstalk when the two channels work simultaneously.
(3) The invention adopts the side feed technology, replaces the common air feed technology of the super surface, reduces the section, reduces the space and is convenient for integration with the existing radio frequency microwave circuit.
(4) The super surface formed by the invention has the independent regulation and control capability of two channels, namely, the working state of one channel can still be regulated and controlled in real time by the code while realizing a certain function by the code, the two channels cannot be mutually influenced, and the isolation degree and the flexibility of the satellite communication and radar system are greatly improved.
(5) The invention can change the passband by adjusting the geometric structure parameters, is easy to adjust and can adapt to various application environments.
Drawings
FIG. 1 is a schematic structural view of a high isolation dual channel subsurface unit, wherein FIG. 1 (a) is a three-dimensional view and FIG. 1 (b) is a side view;
Fig. 2 is a schematic structural diagram of a feed network layer, wherein fig. 2 (a) is a general structure, and fig. 2 (b) is a detailed view of a choke structure, a filter structure, and a PIN tube in the feed network layer;
FIG. 3 is a dispersion curve of an artificial surface plasmon transmission structure in the feed network layer;
fig. 4 is a schematic diagram of the structure of the driving patch.
FIG. 5 is a simulation (solid line) and experimental results (dashed line) of scattering parameters for a high isolation two-channel subsurface unit;
FIG. 6 is a far field pattern simulation (solid line) and experimental results (dashed line) of a high isolation two channel subsurface unit, where FIG. 6 (a) is the E-plane at 10.8GHz, FIG. 6 (b) is the H-plane at 10.8GHz, FIG. 6 (c) is the E-plane at 13.1GHz, and FIG. 6 (d) is the H-plane at 13.1 GHz;
FIG. 7 is a two-pass simulated three-dimensional pattern of 6*6 super-surfaces consisting of high-isolation two-pass super-surface units, where FIG. 7 (a-b) is the result of encoding all 0 A0B, FIG. 7 (c-d) is the result of encoding alternately 0 A0B and 0 A1B, FIG. 7 (e-f) is the result of encoding alternately 0 A0B and 1 A0B, and FIG. 7 (g-h) is the result of encoding alternately 0 A0B and 1 A1B.
Detailed Description
The technical scheme of the invention is described in detail below with reference to the accompanying drawings and specific embodiments.
The invention is composed of a driving module and a parasitic layer above the driving module, the driving module and the parasitic layer are connected through an insulating column, the height of the insulating column can be set according to actual needs, the parasitic layer is composed of a layer of dielectric plate and a parasitic patch printed on the dielectric plate, and the parasitic patch is a metal patch. The invention can work in double channels at the same time, and the two working states in each channel can be switched in real time.
The specific structure of the high-isolation dual-channel super-surface unit is shown in fig. 1, wherein fig. 1 (a) is a three-dimensional view, and fig. 1 (b) is a side view. The lower half part of the unit is a driving module, the upper half part is a parasitic layer, and the middle blank is a 2mm space supported by four plastic columns. The four plastic columns are only examples, and any other insulating columns are possible, and the number of the insulating columns is not limited.
The driving module consists of five layers of structures, which are respectively from bottom to top: the feeding network layer, the high-frequency microwave dielectric plate with the thickness of 0.508mm, the metal ground, the high-frequency microwave dielectric plate with the thickness of 0.508mm and the driving patch.
Wherein the detailed structure at the feed network layer is shown in fig. 2 (a). In order to more clearly illustrate the design of the feed network layer, fig. 2 (b) shows in detail one of the microstrip lines and the functional structures of the parts added thereto. In fig. 2 (b), a filter structure, a choke structure, and a PIN tube are respectively introduced on the microstrip line from right to left.
As shown in fig. 2 (b), the choke structure includes a fan-shaped metal patch as a capacitor and a bent metal wire as an inductor, so as to ensure that the direct current does not affect the transmission of the microwave signal, one end of the bent metal wire is connected with the central angle of the fan-shaped metal patch, and the metal patch is added below the fan-shaped capacitor, where the metal patch can be in any other shape, such as a rectangle, a diamond, a circular lamp, and its function is to connect the positive electrode of the direct current voltage. And, the bending metal line may be a serpentine metal line or other shape bending metal line, and the other end of the bending metal line is connected with the first end of the microstrip line, and the second end of the microstrip line is connected with the dielectric slab edge of the feed network layer.
The choke structure of the present invention requires isolation of the dc and ac signals to avoid leakage of microwave energy from the dc feed. The low-pass filter structure composed of the sector capacitor and the bent metal wire inductor is adopted, besides, the capacitor or the inductor can be replaced by a patch capacitor or a patch inductor, or other existing choke structures such as a choke coil can be directly adopted. When other forms of choke structures are adopted, the choke structures are connected with the microstrip line, and when other forms of choke structures are adopted, the choke structures are also connected with a metal patch, and the metal patch can be any other shape, such as a rectangle, a diamond, a circle and the like, and the function of the metal patch is to be connected with the positive electrode of direct current voltage.
As shown in fig. 2 (b), the filtering structure is an artificial surface plasmon transmission structure, and the filtering structure is formed by arranging metal strips in equidistant arrangement in a microstrip line with a groove, wherein the heights of the metal strips are uniformly decreased from the middle to two ends of the groove, so that good impedance matching is achieved with the microstrip line.
And the second end of the microstrip line is connected with the metal via holes on the dielectric plates of the feed network layer by layer through the PIN diode, and the four edges of the dielectric plates of the feed network layer by layer (1) are all connected in the mode. A step of
The feed network layer (1) comprises four groups of choke structures, filter structures and microstrip lines which are arranged on the lower surface of the first dielectric plate; four through holes are formed in the first dielectric plate, and the four metal through holes on the edge of the rectangular metal patch penetrate through the metal ground (2), the second dielectric plate and the metal ground (2) to be communicated with the four through holes in the first dielectric plate;
The first ends of the microstrip lines in each group are respectively connected with the edges of the lower surface of the first dielectric plate, the choke structures and the filter structures in each group are connected with each microstrip line, the second ends of the microstrip lines in each group are connected with the through holes on the first dielectric plate through PIN diodes, and the PIN diodes are communicated with the choke structures; the first channel is formed by two groups of choke structures, filter structures and microstrip lines in the horizontal direction of the driving patch (3) and the feeding network layer (1), and two metal through holes in the horizontal direction, which are connected with the first dielectric plate and the rectangular metal patch; the second channel is formed by two groups of choke structures, filter structures and microstrip lines in the vertical direction in the driving patch (3) and the feed network layer (1), and two metal through holes in the vertical direction, which are connected with the first dielectric plate and the rectangular metal patch.
The filtering structure is an artificial surface plasmon structure, as shown in fig. 2 (b), and is specifically a metal strip with a comb-shaped structure, the groove depths at the two ends are reduced, and good impedance matching is achieved with the microstrip line. It is noted that the dispersion curve of the artificial surface plasmon transmission structure is not a straight line, but deviates from light, and tends to stabilize the frequency, thereby having a low-pass filter characteristic.
The filtering structure in the invention needs to filter out electromagnetic waves of 11.7-12.2GHz, thereby ensuring that crosstalk does not occur when two channels work simultaneously. The artificial surface plasmon structure is adopted, and the conventional filtering structures such as a high-low impedance line filtering structure, a hairpin filtering structure, a parallel coupling line filtering structure, an interdigital filtering structure and the like can be adopted, so long as the filtering of the target frequency can be realized.
As an example, in fig. 2 (a), the highest metal stripe of the two grooves in the horizontal direction is 4mm, and the highest metal stripe of the two grooves in the vertical direction is 2.2mm, and the dispersion curve thereof is shown in fig. 3. Wherein, the filtering structure in the horizontal direction is the same as the choke structure, and the filtering structure in the vertical direction is the same as the choke structure.
As shown in fig. 2, the PIN diode is soldered to the black square in the figure, with the positive electrode connected to the side near the choke and filter structure and the negative electrode connected to the side near the metal via.
The PIN diode can select MACOM, skywoks components of manufacturers such as pine according to actual conditions, can be equivalent to series resistance and inductance in a conducting state, can be equivalent to series inductance and capacitance in a disconnecting state, and can control the working state of the unit by controlling the conducting state of the PIN diode.
According to the difference of the initial phases of the units, two working states of the units in the same channel can be respectively defined as 0 and 1. The unit has two phase response states for waves input from microstrip ports at two ends of the same channel, for example, a "0" state refers to a phase response of the unit of 0 degrees, a "1" state refers to a phase response of the unit of 180 degrees, a "0" state and a "1" state only need to satisfy a difference between the phase responses of 180 degrees, for example, a "0" state refers to a phase response of the unit of 45 degrees, a "1" state refers to a phase response of the unit of 225 degrees, and the data are not necessarily limited to the above, so long as the two states satisfy a response phase difference of 180 degrees.
When the same channel works, only one PIN tube is conducted, and the two channels can work simultaneously. For example, in fig. 2 (a), only the left PIN tube is in a0 state, only the right PIN tube is in a 1 state, and the states of two PIN tubes in the same channel can be arbitrarily selected from the states of "0" and "1", that is, the left PIN tube can be in a "1" state, and the right PIN tube can be in a "0" state, and the working state refers to the working state when the PIN is conducted; the cell states of the upper and lower PINs of fig. 2 (a) when operated are set as described above.
The dual channel herein supports horizontally polarized channels at low frequencies of 10.1-11.7GHz and vertically polarized channels at high frequencies of 12.2-14.1GHz, respectively. Specifically reflected in fig. 2 (a), the horizontally oriented vias support horizontally polarized waves of 10.1-11.7GHz and the vertically oriented vias support vertically polarized waves of 12.2-14.1 GHz.
The detailed structure of the driving patch is shown in fig. 4, and the driving patch consists of a 7.6x6.4mm metal patch and four protrusions, wherein the four protrusions are respectively positioned at the middle points of four sides of the rectangle and are used for realizing impedance matching. In order to ensure normal feeding, the feed network layer at the bottom layer of the driving module is connected with the driving patch at the top layer through four metal through holes, and the positions of the four metal through holes are respectively positioned at the midpoints of four sides of the driving patch, namely the positions of four wafers at the edge in fig. 4.
Meanwhile, in order to facilitate connection of the cathode of the PIN tube, the center of the driving patch is also connected with the metal ground through a metal via hole. Corresponding round holes are dug out in the middle of the two layers of dielectric plates and the metal ground so as to ensure that four metal through holes at the edge and one metal through hole in the center can normally pass through.
The parasitic layer is composed of an upper parasitic patch and a lower high-frequency microwave dielectric plate with the thickness of 0.508mm, wherein the parasitic patch is a rectangular metal patch with the thickness of 8 multiplied by 5.4 mm.
When the unit works, the positive electrode of the direct current power supply is connected to the metal patch connected with the choke part, and the negative electrode is connected to the metal ground. Microwave energy is fed from a microstrip port of the feed network layer, the driving patch is excited through the metal through hole, and then the parasitic patch is excited through air to the parasitic layer, so that electromagnetic waves are radiated to the space.
The on-off of the four PIN tubes is controlled, so that the unit can be regulated and controlled to work in different states of different channels. For example, only the left PIN tube is turned on, and the cell operates in the "0" state of the low frequency channel; only the upper PIN tube is conducted, and the unit works in a 0 state of a high-frequency channel; the left PIN tube and the lower PIN tube are simultaneously conducted, and the unit works in a 0 state of the low-frequency channel and a 1 state of the high-frequency channel simultaneously. The definition above refers to specific "0" and "1" states, i.e., the "0" state is defined as a definition of 0 degrees for the initial phase and the "1" state is defined as 180 degrees for the initial phase, depending on the cell initial phase distinction.
Simulation and experimental scattering parameters for this cell are shown in fig. 5, where the simulation software uses HFSS. As can be taken from fig. 5, when the left and lower PIN tubes are turned on, so that the cell operates in a "0" state in both channels, the reflection in both frequency bands is low. Meanwhile, the unit has broadband characteristics on both channels: the relative bandwidths are 14.8% and 14.5% respectively at 10.1-11.7GHz and 12.2-14.1 GHz. And the measured band isolation of the two channels shown in fig. 5 is less than-20 dB in the full band, indicating good band isolation between the two channels. The left and lower PIN tubes are described with reference to fig. 2 (a).
Simulation and experimental results for gain and far field patterns are shown in fig. 6 in order to demonstrate the radiation capability of the cell. The patterns of the E plane and the H plane of the unit at the center frequency of 10.8GHz are shown in fig. 6 (a) and (b), and the patterns of the E plane and the H plane at 13.1GHz are shown in fig. 6 (c) and (d), respectively. The maximum gain of the unit at 10.8GHz and 13.1GHz is 6.9dB and 6.7dB respectively, and the unit shows good radiation characteristics. Meanwhile, the cross polarization of the fiber is below-25 dB at 10.8GHz and below-17 dB at 13.1GHz, which shows that good polarization isolation exists between the fiber and the fiber.
The super surface composed of the units can realize different functions through coding, and more importantly, the super surface has the capability of independently adjusting two channels, so that the degree of freedom of adjustment and control is increased. As described above, each cell has two states "0"/"1" in two channels, the states of channel a are recorded as 0 A and 1 A, and the states of channel B are recorded as 0 B and 1 B, and the operating state of each cell can be represented by a combination of the two states of different channels.
For example, 0 A1B indicates that the cell appears as a "0" in channel A and a "1" in channel B. Here, a 6*6 super surface is used as an example, and adjacent cells have a certain interval distance arrangement in x and y directions, and a three-dimensional far-field pattern is calculated by CST, as shown in fig. 7. Wherein, FIG. 7 (a-b) is the result of encoding all 0 A0B, FIG. 7 (c-d) is the result of encoding 0 A0B and 0 A1B alternately, FIG. 7 (e-f) is the result of encoding 0 A0B and 1 A0B alternately, and FIG. 7 (g-h) is the result of encoding 0 A0B and 1 A1B alternately.
When all elements are coded at 0 A0B, the super surface emits upward beams in both channels, which can be used as a high gain antenna, as shown in fig. 7 (a-b). The channel a state is then kept unchanged, and the passband B state is changed to a "0"/"1" staggered arrangement, i.e., the state of the cell in the y-direction exhibits a staggered arrangement of 0 A0B and 0 A1B, where the supersurface produces two symmetrically split beams in channel B, as shown in fig. 7 (c-d). Notably, the super-surface still emits an upward beam in channel a at this time, demonstrating the ability of the two channels to be independently controlled. The remaining patterns of fig. 7 illustrate this more fully, and this control method is also applicable to changes in the x-direction. And, these encodings can also be flexibly switched in real time.
Claims (5)
1. The double-channel super-surface unit with high isolation is characterized by comprising a driving module and a parasitic layer, wherein the driving module is connected with the parasitic layer through an insulating column; the driving module comprises a feeding network layer (1), a first dielectric plate, a metal ground (2), a second dielectric plate and a driving patch (3), wherein the five layers of structures are sequentially overlapped, and the parasitic layer comprises a third dielectric plate and a metal patch positioned on the upper surface of the third dielectric plate;
The driving patch comprises a rectangular metal patch and four raised metal blocks, the four raised metal blocks are respectively positioned at the midpoints of four sides of the rectangular metal patch, and the center of the rectangular metal patch is communicated with the center of the metal ground (2) through a through hole;
The feed network layer (1) is arranged on the lower surface of the first dielectric plate and comprises four groups of choke structures, filter structures and microstrip lines; four through holes are formed in the first dielectric plate, and the four metal through holes on the edge of the rectangular metal patch penetrate through the second dielectric plate and the metal ground (2) to be communicated with the four through holes in the first dielectric plate;
The first ends of the microstrip lines in each group are respectively connected with the edges of the lower surface of the first dielectric plate, the choke structures and the filter structures in each group are connected with each microstrip line, the second ends of the microstrip lines in each group are connected with the through holes on the first dielectric plate through PIN diodes, and the PIN diodes are communicated with the choke structures; the first channel is formed by two groups of choke structures, filter structures and microstrip lines in the horizontal direction of the driving patch (3) and the feeding network layer (1), and two metal through holes in the horizontal direction, which are connected with the first dielectric plate and the rectangular metal patch; the second channel is formed by two groups of choke structures, filter structures and microstrip lines in the vertical direction in the driving patch (3) and the feed network layer (1), and two metal through holes in the vertical direction, wherein the two metal through holes are connected with the first dielectric plate and the rectangular metal patch;
The choke structure comprises a fan-shaped metal patch serving as a capacitor and a bending metal wire serving as an inductor, wherein one end of the bending metal wire is connected with the central angle of the fan-shaped metal patch, and the metal patch is added below the fan-shaped capacitor; the filtering structure is an artificial surface plasmon transmission structure, and the structure is that metal strips which are arranged at equal intervals are arranged in a microstrip line with a groove, and the heights of the metal strips are uniformly decreased from the middle to the two ends of the groove; the second end of the microstrip line is connected with a metal via hole of a first dielectric plate on the feed network layer (1) through a PIN diode; and each group of choke structures, filter structures and microstrip lines rotate clockwise by 90 degrees by taking the center of the dielectric plate as a center point.
2. The dual channel subsurface unit with high isolation according to claim 1, wherein the four choke structures are connected with metal patches for connecting to the positive electrode of a power source and with the negative electrode of the power source.
3. A dual channel subsurface unit with high isolation according to claim 1 or 2, wherein the filtering structures on the first channel and the second channel are different.
4. A dual channel subsurface unit with high isolation according to claim 1 or 2, wherein the unit has two phase response states for waves input from microstrip ports at both ends of the same channel, the phase difference of the two state responses is 180 degrees, only one PIN tube is turned on when the same channel is operated, and the two channels can be operated simultaneously.
5. A supersurface made up of cells according to claims 1-4, wherein said supersurface is a square matrix of N x N cells, the state of each cell being characterized by the phase response states of the first and second channels.
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| CN113644417B (en) * | 2021-08-09 | 2023-02-17 | 上海交通大学 | Phasor Beam Steerable Antenna and Its Conformal Antenna Array |
| CN113708080B (en) * | 2021-09-03 | 2022-07-29 | 南京大学 | Efficient phase dynamically adjustable reflection super-structure surface |
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