CN111812908B - Fabry-Perot Cavity Filter and Method for Dynamic Color Control - Google Patents
Fabry-Perot Cavity Filter and Method for Dynamic Color Control Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 81
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000008859 change Effects 0.000 claims abstract description 16
- 230000000694 effects Effects 0.000 claims abstract description 13
- 230000033228 biological regulation Effects 0.000 claims abstract description 12
- 238000001465 metallisation Methods 0.000 claims abstract description 10
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 230000005012 migration Effects 0.000 claims abstract description 7
- 238000013508 migration Methods 0.000 claims abstract description 7
- 230000009471 action Effects 0.000 claims abstract description 6
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 5
- 238000002360 preparation method Methods 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 26
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 23
- 238000010521 absorption reaction Methods 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 8
- 239000004408 titanium dioxide Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000006479 redox reaction Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 4
- 239000011797 cavity material Substances 0.000 description 55
- 238000009825 accumulation Methods 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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Abstract
The invention provides a Fabry-Perot cavity filter for dynamic color regulation and control, a preparation method and a tuning method, which sequentially comprise a first metal film layer, a second non-conductive dielectric layer, a third transparent conductive oxide layer, a fourth metal layer and a fifth substrate layer from top to bottom; the second non-conductive dielectric layer is used as a barrier layer to block metal ion migration of a material with a dielectric constant of being close to 0 after electrochemical metallization; the third transparent conductive oxide layer is made of a material with a dielectric constant of 0, and the refractive index can be changed under the action of an electric field, so that the refractive index of the Fabry-Perot cavity body is adjusted; the invention realizes the change of the effective refractive index of the ENZ material based on the ECM effect, thereby changing the resonance wavelength of the FP cavity, effectively solving the problems and completing the memory of the resonance condition while removing the voltage.
Description
Technical Field
The invention belongs to the technical field of display, and particularly relates to a Fabry-Perot cavity filter for dynamic color regulation and control, and a preparation method and a tuning method thereof.
Background
In the field of display technology, plasma structures can be used to generate different colors, but once the structures are determined, the generated colors are fixed. The plasma structure has the characteristics of thin structure, stability, high resolution and the like in the display technology. How to dynamically adjust the color of the plasma is a hotspot of current research, most of the ideas of dynamic adjustment are to change the structure of the plasma so as to adjust the intensity or wavelength of the plasma, and the current main regulation and control mode is mainly based on: direct electrochemical control, reversible electrochemical deposition, polarization control, a pullable embedded structure, a phase change material, and electromechanical control of the distance between two metals of a fabry-perot (FP) cavity. The invention mainly realizes the dynamic adjustment of colors based on the FP cavity.
FP cavities are typically a special optical structure formed by two high reflectivity metal layers and an intermediate layer cavity. Incident light beams can generate a multi-beam interference effect in the cavity, light waves meeting the phase matching condition can generate resonance, and the resonance wavelength is related to the cavity length and the cavity refractive index.
However, most FP cavities choose to adjust the resonant wavelength by adjusting the cavity length in two main ways: the first is to prepare FP cavities of different cavity lengths, but this does not allow for a truly dynamic adjustment, and the second is to electrostatically adjust the distance between the two metal plates, but such devices are expensive to manufacture and complex to manufacture, and the mechanical device lifetime decreases with time.
The FP cavity that changes the resonance wavelength by changing the cavity refractive index is reported, and the reason for this is because the refractive index of the material that can be used as the FP cavity is not easily changed. The material with the dielectric constant tending to 0 (Epsilon-near-zero) ENZ material refers to the material with the real part of the dielectric constant tending to 0 in a specific wavelength interval. Based on the change Δ n of the refractive index of the material ═ Δ ∈/2(2 √ ε), when ε tends to 0, a large change in refractive index can be obtained with a theoretically limited change in dielectric constant. The metal ions in the ENZ material under bias, due to the electrochemical metallization (ECM) occurring, also enable dynamic adjustment and memory of the refractive index. Therefore, based on the technology, the FP cavity based on the ENZ material is designed, and the function of dynamically regulating and controlling the color can be realized by changing the resonance wavelength.
Disclosure of Invention
Aiming at the problem that the length of the Fabry-Perot (FP) cavity is adjusted to adjust the resonance wavelength and the resonance intensity, the invention provides the FP cavity which uses a material (ENZ material) with a dielectric constant of being close to 0 as a cavity material, the resonance wavelength and the resonance intensity are adjusted by dynamically adjusting the refractive index of the ENZ material by applying voltage so as to achieve the purpose of adjusting color, and the memory of the color is completed after the voltage is removed.
In order to achieve the purpose, the technical scheme of the invention is as follows:
a Fabry-Perot cavity filter for dynamic color regulation comprises a first metal film layer 11, a second non-conductive dielectric layer 12, a third transparent conductive oxide layer 13, a fourth metal layer 14 and a fifth substrate layer 15 from top to bottom in sequence;
the first metal thin film layer 11 is used for introducing incident light into the fabry-perot cavity and is used as an upper metal layer in a metal-insulator-metal structure of the fabry-perot cavity;
the second non-conductive dielectric layer is used as an intermediate dielectric layer 12 in a metal-insulator-metal structure of a Fabry-Perot cavity and is used as a barrier layer for blocking metal ion migration after electrochemical metallization of a material (ENZ material) with a dielectric constant of being close to 0;
the third transparent conductive oxide layer 13 is made of a material with a dielectric constant of about 0, and can change the refractive index under the action of an electric field, so that the refractive index of the Fabry-Perot cavity is adjusted;
the fourth metal layer 14 is used as a lower metal layer in a fabry-perot cavity metal-insulator-metal structure;
the bottom is a fifth layer substrate layer 15 on which the above structure is prepared;
meanwhile, a first metal thin film layer 11, a second non-conductive dielectric layer 12, a third transparent conductive oxide layer 13 and a fourth metal layer 14 form a memristive unit, wherein the first metal thin film layer 11 serves as a first electrode, the fourth metal layer serves as a second electrode 14, the first metal thin film layer 11 and the second non-conductive dielectric layer 12 form a mutually perpendicular crossed array (CROSSBAR) structure, the second non-conductive dielectric layer 12 and the third transparent conductive oxide layer 13 form a mutually perpendicular crossed array structure, the first electrode is electrically connected with the second electrode, voltage is applied to the memristive unit to complete the regulation and control of the refractive index, the voltage is removed, and the refractive index completes the memory.
Preferably, the first metal thin film layer 11 is Au, the thickness of the Au film ensures that incident light can penetrate through the Au film and enter the FP cavity, and the thickness of the Au film is 15-30 nm.
Preferably, the second non-conductive dielectric layer 12 is a titanium dioxide layer, TiO2TiO as non-conductive dielectric to form an electric field in the memristive cell2The layer thickness is 50-100 nm.
Preferably, the third transparent conductive oxide layer 13 is a silica-doped silver thin film layer, SiO2The preset volume fraction of Ag is 90%: the silicon dioxide silver-doped thin film layer exists in the area of the real part of the dielectric constant area 0, and the thickness of the silicon dioxide silver-doped thin film layer is 75-150 nm.
Preferably, the fourth metal layer 14 is an Au layer, and the thickness of the Au layer is 200-300 nm.
Preferably, the fifth layer substrate layer 15 is a Si substrate layer, and the thickness thereof is 15 mm.
In order to achieve the above object, the present invention further provides a method for preparing a fabry-perot cavity filter for dynamic color control, comprising the following steps:
(1) depositing an Au film on the fifth substrate layer 15 by using a direct-current magnetron sputtering mode;
(2) depositing a silicon dioxide silver-doped transparent conductive film on the fourth metal layer 14 in a radio frequency magnetron co-sputtering mode, and patterning the layer of material by using a mask;
(3) depositing TiO2 on the third transparent conductive oxide layer 13 by using a direct-current magnetron sputtering mode, and patterning the layer of material by using a mask;
(4) depositing an Ag film on the second non-conductive dielectric layer 12 by using a direct current magnetron sputtering method, and patterning the layer of material by using a mask to form an electrode.
In order to achieve the above object, the present invention further provides a method for tuning the resonance wavelength and the resonance intensity of the fabry-perot cavity filter for dynamic color control, comprising the following steps:
filter pair x when no voltage is applied1The wavelength has strong absorption and presents a color, a positive voltage is applied to the fourth metal layer 14 through a voltage device, Ag atoms in the third transparent conductive oxide layer 13 can be subjected to electrochemical metallization, Ag is pre-embedded in the third transparent conductive oxide layer, adjacent Ag clusters are equivalent to two electrodes, Ag atoms can form Ag nanowires between the Ag clusters through oxidation-reduction reaction, the effective refractive index of the third transparent conductive oxide layer is changed, the Ag nanowires close to the interface of the second non-conductive dielectric layer and the third transparent conductive oxide layer can be blocked at the interface to form an Ag layer, and the refractive index of the third transparent conductive oxide layer is changed along with the formation of the Ag nanowires at the moment, so that the Ag layer can be subjected to x-ray color correction2The wavelength has strong absorption and shows b color; as the positive voltage is further applied to the fourth metal layer, Ag nano-wires in the third transparent conductive oxide layer are further formed, the refractive index is continuously changed, and the x is subjected to the positive voltage3The wavelength has strong absorption and shows c color;
applying positive voltage to the first metal film layer 11 by a voltage device, the Ag atoms continue to generate electrochemical metallization effect, the Ag nanowires of the third transparent conductive oxide layer start to break gradually, the refractive index changes, and the X pairs2The wavelength has strong absorption and shows b color, and as a positive voltage is further applied to the first metal thin film layer 11, Ag nano-wires formed in the third transparent conductive oxide layer are completely broken, the refractive index returns to the initial value, and the refractive index is adjusted to x1The wavelength has strong absorption and exhibits a color.
The invention has the beneficial effects that: most reports about the dynamic adjustment of the FP cavity currently adjust the resonance mode of the FP cavity by electromechanically controlling the thickness of the cavity between two metal plates, but this kind of FP cavity has mechanical loss, and the change of the cavity length inevitably causes the design problem of the device structure. The invention realizes the change of the effective refractive index of the ENZ material based on the ECM effect, thereby changing the resonance wavelength of the FP cavity, effectively solving the problems and completing the memory of the resonance condition while removing the voltage.
Drawings
FIG. 1 is a schematic perspective view of the present invention;
FIG. 2 is a top view of the structure provided by the present invention;
FIG. 3 is a schematic structural diagram of a voltage modulation unit according to the present invention;
FIG. 4 is a schematic diagram of a voltage modulation process according to the present invention;
FIG. 5 is a diagram of simulation results of the present invention.
1 is a Fabry-Perot cavity; 2 is an Ag accumulation layer, and 11 is a first metal film layer; 12 is a second non-conductive dielectric layer; 13 is a third transparent conductive oxide layer; 14 is a fourth metal layer; 15 is a fifth substrate layer;
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
A Fabry-Perot cavity filter for dynamic color regulation comprises a first metal film layer 11, a second non-conductive dielectric layer 12, a third transparent conductive oxide layer 13, a fourth metal layer 14 and a fifth substrate layer 15 from top to bottom in sequence;
the first metal thin film layer 11 is used for introducing incident light into the fabry-perot cavity and is used as an upper metal layer in a metal-insulator-metal structure of the fabry-perot cavity;
the second non-conductive dielectric layer is used as an intermediate dielectric layer 12 in a metal-insulator-metal structure of a Fabry-Perot cavity and is used as a barrier layer for blocking metal ion migration after electrochemical metallization of a material with a dielectric constant of being close to 0;
the third transparent conductive oxide layer 13 is made of a material with a dielectric constant of about 0, and can change the refractive index under the action of an electric field, so that the refractive index of the Fabry-Perot cavity is adjusted;
the fourth metal layer 14 is used as a lower metal layer in a fabry-perot cavity metal-insulator-metal structure;
the bottom is a fifth layer substrate layer 15 on which the above structure is prepared;
meanwhile, a first metal thin film layer 11, a second non-conductive dielectric layer 12, a third transparent conductive oxide layer 13 and a fourth metal layer 14 form a memristive unit, wherein the first metal thin film layer 11 serves as a first electrode, the fourth metal layer serves as a second electrode 14, the first metal thin film layer 11 and the second non-conductive dielectric layer 12 form a mutually perpendicular crossed array (CROSSBAR) structure, the second non-conductive dielectric layer 12 and the third transparent conductive oxide layer 13 form a mutually perpendicular crossed array structure, the first electrode is electrically connected with the second electrode, voltage is applied to the memristive unit to complete the regulation and control of the refractive index, the voltage is removed, and the refractive index completes the memory.
The first metal film layer 11 is made of Au, the thickness of the Au film ensures that incident light can penetrate through the Au film to enter the FP cavity, and the thickness of the Au film is 15-30 nm.
The second non-conductive dielectric layer 12 is a titanium dioxide layer, TiO2TiO as non-conductive dielectric to form an electric field in the memristive cell2The layer thickness is 50-100 nm.
The third transparent conductive oxide layer 13 is a silicon dioxide silver-doped thin film layer, SiO2The preset volume fraction of Ag is 90%: the silicon dioxide silver-doped thin film layer exists in the area of the real part of the dielectric constant area 0, and the thickness of the silicon dioxide silver-doped thin film layer is 75-150 nm.
The fourth metal layer 14 is an Au layer with a thickness of 200-300 nm.
The fifth layer substrate layer 15 is a Si substrate layer and has a thickness of 15 mm.
The embodiment also provides a method for preparing the fabry-perot cavity filter for dynamic color control, which comprises the following steps:
(1) depositing an Au film on the fifth substrate layer 15 by using a direct-current magnetron sputtering mode;
(2) depositing a silicon dioxide silver-doped transparent conductive film on the fourth metal layer 14 in a radio frequency magnetron co-sputtering mode, and patterning the layer of material by using a mask;
(3) depositing TiO2 on the third transparent conductive oxide layer 13 by using a direct-current magnetron sputtering mode, and patterning the layer of material by using a mask;
(4) depositing an Ag film on the second non-conductive dielectric layer 12 by using a direct current magnetron sputtering method, and patterning the layer of material by using a mask to form an electrode.
The embodiment further provides a method for tuning the resonance wavelength and the resonance intensity of the fabry-perot cavity filter for dynamic color control, which includes the following steps:
filter pair x when no voltage is applied1The wavelength has strong absorption and presents a color, a positive voltage is applied to the fourth metal layer 14 through a voltage device, Ag atoms in the third transparent conductive oxide layer 13 can be subjected to electrochemical metallization, Ag is pre-embedded in the third transparent conductive oxide layer, adjacent Ag clusters are equivalent to two electrodes, Ag atoms can form Ag nanowires between the Ag clusters through oxidation-reduction reaction, the effective refractive index of the third transparent conductive oxide layer is changed, the Ag nanowires close to the interface of the second non-conductive dielectric layer and the third transparent conductive oxide layer can be blocked at the interface to form an Ag layer, and the refractive index of the third transparent conductive oxide layer is changed along with the formation of the Ag nanowires at the moment, so that the Ag layer can be subjected to x-ray color correction2The wavelength has strong absorption and shows b color; as the positive voltage is further applied to the fourth metal layer, Ag nano-wires in the third transparent conductive oxide layer are further formed, the refractive index is continuously changed, and the x is subjected to the positive voltage3The wavelength has strong absorption and shows c color;
applying positive voltage to the first metal film layer 11 by the voltage device, the Ag atoms continue to generate electrochemical metallization effectThe Ag nanowires of the third transparent conductive oxide layer begin to fracture gradually, and the refractive index changes for x2The wavelength has strong absorption and shows b color, and as a positive voltage is further applied to the first metal thin film layer 11, Ag nano-wires formed in the third transparent conductive oxide layer are completely broken, the refractive index returns to the initial value, and the refractive index is adjusted to x1The wavelength has strong absorption and exhibits a color.
Specifically, in this embodiment, as shown in fig. 1 and fig. 2, each device may be regarded as a plurality of FP cavity control units through the structural design of the cross array (cross array) perpendicular to each other, and different control units can achieve different adjustment effects, so as to achieve control over the entire adjustment effect, and meanwhile, the cross array (cross array) structure can ensure that the ohmic contact is sufficiently small.
As shown in fig. 3, the FP cavity control unit includes a first metal thin film layer 11, a second non-conductive dielectric layer 12, a third transparent conductive oxide layer 13, a fourth metal layer 14 and a fifth substrate layer 15. In the first metal thin film layer 11, the metal material is preferably Au, and in order to enable light to well penetrate through the first metal thin film layer 11, the thickness of Au should not be too thick, in this embodiment, a simulation study is performed by using 30nm Au. Said second non-conductive dielectric layer 13 is preferably TiO2，TiO2The titanium dioxide is used as a barrier layer in a memristor, can effectively block the migration of Ag ions, and adopts TiO with the thickness of 50nm2The film was subjected to simulation studies. The third transparent conductive oxide layer 13 is preferably SiO2The Ag-doped film can realize the migration of Ag atoms in the third transparent conductive oxide layer 13 through the ECM effect under the action of an electric field so as to achieve the purpose of adjusting the effective refractive index of the third transparent conductive oxide layer 12, and the SiO film2The Ag-doped thin film is also a typical transparent conductive thin film, and the proper doping amount enables the thin film to have an ENZ region in an optical band, so that the change of a dielectric constant is small, a large enough effective refractive index change can be provided, and a modulation effect is enhanced; in order to achieve the effects of transparency and conductivity, the invention adopts SiO with the thickness of 30nm2The initial doping amount of the Ag-doped film is Si02: ag (90%) was subjected to simulation study. The fourth metal layer 14 is preferably an Au layer, and in order to enable light to be effectively reflected back to the cavity, the simulation research is carried out by using Au with the thickness of 200 nm. The fifth layer substrate layer 15 is preferably a Si substrate with a thickness of 15 mm. The voltage regulating device is arranged on the first metal thin film layer 11 and the fourth metal thin film layer 14, an initial positive voltage is applied to the fourth metal thin film layer 14, and a negative voltage is applied to the first metal thin film layer 11.
As shown in fig. 4, the voltage modulated effective refractive index occurs primarily between the second non-conductive dielectric layer 12 and the third transparent conductive oxide layer 13. Considering that the formation of Ag nanowires is a gradual process, and the second non-conductive dielectric layer 12 can block the migration of Ag atoms, Ag accumulation layers with different thicknesses can be formed between the second non-conductive dielectric layer 12 and the third transparent conductive oxide layer 13 as the voltage application time increases. When no voltage is applied, the overall effective refractive index of the FP cavity is recorded as a. When a positive voltage is applied preliminarily, Ag in the third transparent conductive oxide layer 13 migrates to the second non-conductive dielectric layer 12 and is blocked at the interface of the second non-conductive dielectric layer 12 and the third transparent conductive oxide layer 13 to form an Ag accumulation layer with the thickness of 1nm, Ag nano-wires in the third transparent conductive oxide layer 13 are preliminarily formed at the moment, and under the action of the Ag accumulation layer, the whole effective refractive index of the FP cavity is changed, and the effective refractive index is b at the moment. With further application of positive voltage, the Ag nanowires in the third transparent conductive oxide layer 13 are further formed to form an Ag accumulation layer with a thickness of 2nm, and the overall effective refractive index of the FP cavity continues to change, at which time the effective refractive index is recorded as c. When a positive voltage is further applied, Ag in the third transparent conductive oxide layer 13 is completely formed into an Ag accumulation layer with a thickness of 3nm, and at this time, Ag nanowires in the third transparent conductive oxide layer 13 are completely formed, and the effective refractive index is recorded as d. After the reverse voltage is applied, the Ag nanowires of the third transparent conductive oxide layer 13 are gradually broken, and the effective refractive index is also restored to the initial value.
Fig. 5 shows the simulation result of FDTD (time domain effective difference method) according to the present invention, where the incident light is vertical.
When no positive voltage is applied to the FP cavity control unit, the Ag nanowire is not formed in the third transparent conductive oxide layer 13, and at this time, the effective refractive index corresponds to the curve shown by the effective refractive index a in fig. 5, the resonance peak position is 508.5nm, and the reflectivity is 0.04.
When the FP cavity control unit initially applies a positive voltage, Ag nanowires of the third transparent conductive oxide layer 13 are initially formed, corresponding to a curve shown by the effective refractive index b in fig. 5, whose resonance peak position is 558.7nm and whose reflectance is 0.12.
When the FP cavity control unit further applied a positive voltage, Ag nanowires of the third transparent conductive oxide layer 13 were further formed, corresponding to the curve shown by the effective refractive index c in fig. 5, whose resonance peak position was 633.1nm and whose reflectance was 0.01.
When the FP cavity control unit further applies a positive voltage, the Ag nanowire of the third transparent conductive oxide layer 13 is completely formed, and the resonance peak position is 705.5nm and the reflectance is 0.03 corresponding to the curve shown by the effective refractive index d in fig. 5.
When the FP chamber control unit applies negative voltage, the Ag nano-wires of the third transparent conductive oxide layer 13 are gradually broken, so that the adjustment and the memory of the resonance position and the resonance strength are realized, the adjustment effects of the plurality of FP chamber control units can be mutually superposed, and the adjustment effect of the whole device is more obvious and flexible.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
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| CN113391443B (en) * | 2021-06-28 | 2023-06-06 | 武汉大学 | Optical modulator, super surface and information encryption method based on nanometer microcavity |
| CN113934070B (en) * | 2021-10-20 | 2025-06-20 | 光子集成(温州)创新研究院 | A flexible display device based on MZI structure and its application |
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