CN111769749B - Explosion-proof type large-capacity multi-level full-bridge module device - Google Patents
Explosion-proof type large-capacity multi-level full-bridge module device Download PDFInfo
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- CN111769749B CN111769749B CN202010757765.5A CN202010757765A CN111769749B CN 111769749 B CN111769749 B CN 111769749B CN 202010757765 A CN202010757765 A CN 202010757765A CN 111769749 B CN111769749 B CN 111769749B
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- copper bar
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- thyristor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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Abstract
The invention relates to an explosion-proof type large-capacity multi-level full-bridge module device, which comprises a first component, a second component and a module bottom plate; the second component is fixed at one end of the module base plate; the other end at the module bottom plate is fixed after first subassembly and second subassembly butt joint, and first subassembly includes: the IGBT crimping assembly comprises crimping type IGBT components, wherein alternating current outgoing terminals of the IGBT are respectively led out of an IGBT outgoing copper bar and under the IGBT outgoing copper bar; and the weak positions on the IGBT outgoing line copper bar and the weak positions under the IGBT outgoing line copper bar are respectively fixed with a reinforced copper bar A and a reinforced copper bar B. The invention reduces deformation caused by explosion by designing the protection reinforcing structure.
Description
Technical Field
The invention belongs to the technical field of direct current transmission, and particularly relates to an explosion-proof high-capacity multi-level full-bridge module device.
Background
In the operation of the soft direct current converter valve, under the condition that a single module unit fails, the failed module unit is bypassed by closing the bypass switch, so that the normal operation of the whole soft direct current converter valve is ensured.
However, if the bypass switch fails, the failed module unit cannot bypass the bypass switch, and in this case, the capacitor of the module unit will be continuously charged by the current of the soft direct current converter valve until the module unit is over-voltage exploded, and the failed module unit presents an open circuit state, so that the soft direct current converter valve is stopped.
A measure for solving the problem of soft direct current converter valve outage caused by bypass switch refusal action fault is to connect thyristors in parallel with an alternating current output port of a module unit, when the capacitance voltage of the module unit rises to the breakdown voltage of the thyristors after the bypass switch is refused action fault, the thyristors will break down in overvoltage, the fault module unit is in a short circuit failure mode, and the soft direct current converter valve is ensured to continue to normally operate. When the thyristor breaks down in overvoltage, the capacitor discharges through the thyristor and the connecting copper bar in a short circuit manner, and extremely large impact electromotive force is generated in the module, if the structural design of the module is not stable enough, the structural part of the module is deformed when the thyristor breaks down, and the deformed metal parts can influence the safety of adjacent module units on two sides, so that the fault is enlarged.
Therefore, in order to cope with the above situation, in the case of the overvoltage breakdown of the thyristors of the individual module units, the peripheral modules should be ensured not to be affected, so the explosion-proof design of the module units becomes an important point in the product design.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides an explosion-proof high-capacity multi-level full-bridge module device, and the deformation caused by explosion is reduced by designing a protection reinforcing structure.
In order to solve the technical problems, the invention provides an explosion-proof high-capacity multi-level full-bridge module device, which is characterized by comprising: the first assembly, the second assembly and the module base plate; the second component is fixed at one end of the module base plate; the first component and the second component are fixed at the other end of the module bottom plate after being butted,
The first assembly includes: the module shell, and the IGBT crimping component, the thyristor crimping component and the bypass switch which are arranged inside the module shell,
The IGBT crimping assembly comprises a crimping type IGBT component, and an alternating current outgoing line end of the IGBT is respectively led out of an IGBT outgoing line copper bar and an IGBT outgoing line copper bar; the weak points on the IGBT outgoing line copper bar and the weak points under the IGBT outgoing line copper bar are respectively fixed with a reinforced copper bar A and a reinforced copper bar B,
Two ends of the bypass switch are respectively fixed on the IGBT outgoing line copper bar and the end face under the IGBT outgoing line copper bar;
The thyristor crimping assembly comprises a crimping thyristor, wherein both ends of the thyristor are respectively led out of a left outgoing line copper bar and a right outgoing line copper bar of the thyristor; the left outlet copper bar of the thyristor and the right outlet copper bar of the thyristor are respectively fixed on the end surfaces of the IGBT outlet copper bar and the IGBT outlet copper bar;
The second assembly includes: and a capacitor.
Further, the middle part of the IGBT outgoing copper bar is in pressure welding with the reinforced copper bar A, and the middle part of the IGBT outgoing copper bar is in pressure welding with the reinforced copper bar B.
Furthermore, the left outlet copper bar of the thyristor and the right outlet copper bar of the thyristor are both soft connection copper bars.
Furthermore, the left outlet copper bar of the thyristor and the right outlet copper bar of the thyristor are soft connection copper bars with corners.
Further, the module shell includes module top panel, module right side board, module front panel, module left side board and module rear panel, and module top panel and module right side board, module front panel, module left side board and module rear panel splice in proper order and constitute the shell of first subassembly, and the module shell splices together with the module bottom plate and forms box structure.
Further, oblong holes are formed in the upper module panel, the right module side plate and the left module side plate, so that air flow pressure release during overvoltage breakdown of the thyristor is realized.
Further, the module front panel includes: a front upper panel and a front lower panel; wherein, the front upper panel includes: at least one first through hole; the IGBT outgoing copper bar is connected with the outside through at least one first through hole; the front lower panel includes: at least one second through hole; the lower part of the IGBT outgoing copper bar is connected with the outside through at least one second through hole.
Compared with the prior art, the invention has the following beneficial effects: according to the device, the pressure air flow is released through the openings of the panels, the explosion mechanical force of the thyristor is attenuated through the deformation of the two outgoing copper bars of the thyristor, the deformation controllability of the IGBT outgoing copper bars can be realized through the addition of the reinforcing copper bars at the weak positions, the integrity of the module under the overvoltage breakdown condition of the thyristor is finally ensured, and the reliable operation of the whole soft direct-current converter valve product is ensured.
Drawings
FIG. 1 is a schematic diagram of a module assembly structure according to the present invention;
FIG. 2 is a side view of the modular structure of the present invention;
fig. 3 is a schematic structural view of an IGBT crimping assembly and a thyristor assembly of the invention;
fig. 4 is a schematic structural view of the IGBT crimping assembly of the present invention;
Fig. 5 is a schematic structural view of the thyristor crimping assembly of the invention.
Reference numerals: 101. a module upper panel 102, a module right side plate 103, a module bottom plate 104, a module front panel 105, a module left side plate 106 and a capacitor;
201. the IGBT crimping assembly is 202, the IGBT outgoing copper bar is arranged on the IGBT crimping assembly, and 203, the IGBT outgoing copper bar is arranged under the IGBT outgoing copper bar;
301. The thyristor crimping assembly 302, the left outgoing line copper bar of the thyristor 303 and the right outgoing line copper bar of the thyristor; 304. a water-cooled radiator;
401. A bypass switch;
501. reinforcing copper bars A and 502 and reinforcing copper bar B.
Detailed Description
The invention is further described below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present invention, and are not intended to limit the scope of the present invention.
In the description of the present patent, it should be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that elements are listed and may include other elements not expressly listed.
In the description of the present patent, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are based on directions or positional relationships shown in the drawings, are merely for convenience of describing the present patent and simplifying the description, and do not indicate or imply that the apparatus or elements to be referred to must have a specific direction, be configured and operated in a specific direction, and thus should not be construed as limiting the present patent. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present patent, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in the present patent will be understood by those skilled in the art in specific cases.
Fig. 1 is a schematic diagram of a composition structure of an explosion-proof high-capacity multi-level full-bridge module device according to an embodiment of the present invention, where the device includes: a first component, a second component, and a module base 103; the second component is fixed at one end of the module base plate 103; the first component is fixed at the other end of the module base plate 103 after being butted with the second component,
The first assembly includes: a module housing and an IGBT crimping assembly 201, a thyristor crimping assembly 301 and a bypass switch 401 disposed inside the module housing,
The second assembly includes: and a capacitor 106.
The device of the invention has compact distribution and arrangement of the devices of each part, and reduces the space occupation of the device.
In the embodiment of the present invention, as shown in fig. 3, the IGBT crimping assembly 201 includes a crimping type IGBT element, the IGBT element has a large capacity, the ac outlet end of the IGBT leads out the upper 202 and the lower 203 of the IGBT outlet copper bars, that is, the two outlet copper bars lead out the C and E ends of the IGBT respectively, and the modules are electrically connected in series through the two outlet copper bars.
The IGBTs within the IGBT crimp assembly 201 are electrically connected (by stacking busbar in the assembly) to the capacitor 106, that is to say the capacitor is mainly a filtering effect and at both ends of the IGBTs.
The two ends of the bypass switch 401 are respectively fixed to the end faces (the electric connection is through the end face direct contact connection) of the upper 202 and lower 203 of the IGBT outgoing copper bars, so that the bypass switch 401 is connected in parallel to the two ends of the IGBT, the switch function is to play a bypass role under the condition that the modules are damaged, and the damage of a single module is realized without affecting the normal operation of the whole product.
According to the invention, in order to reduce the deformation, the reinforced copper bar A501 and the reinforced copper bar B502 are respectively fixed at the weak positions of the IGBT outgoing line copper bar upper 202 and the IGBT outgoing line copper bar lower 203, so that the local strength is increased, and the deformation of the IGBT outgoing line copper bar upper 202 and the IGBT outgoing line copper bar lower 203 during thyristor explosion is reduced.
In the preferred embodiment of the present invention, as shown in fig. 4, the upper IGBT outgoing copper bar 202 and the lower IGBT outgoing copper bar 203 are in a long rectangular shape, and the middle of the outgoing copper bar is a weak point, so that the middle part of the upper IGBT outgoing copper bar 202 is crimped with the reinforcing copper bar a501, the size of the reinforcing copper bar a501 is 125mm x 110mm x 4mm, the middle part of the lower IGBT outgoing copper bar 203 is crimped with the reinforcing copper bar B502, and the size of the reinforcing copper bar B502 is 125mm x 110mm x 4mm.
In the embodiment of the present invention, as shown in fig. 5, the thyristor crimping assembly 301 includes a crimped thyristor, and two ends of the thyristor respectively lead out a left outgoing copper bar 302 and a right outgoing copper bar 303 of the thyristor; the left outlet copper bar 302 and the right outlet copper bar 303 of the thyristor are respectively fixed on the end surfaces of the upper 202 and the lower 203 of the outlet copper bars of the IGBT, so that the thyristors are connected in parallel at the two ends of the IGBT, and a bypass effect is achieved.
A water-cooling radiator 304 is arranged on the rear end face of the thyristor to radiate heat for the thyristor assembly.
In the preferred embodiment of the present invention, the left outlet copper bar 302 and the right outlet copper bar 303 of the thyristor in the thyristor assembly are soft connection copper bars, as shown in fig. 5, and soft connection copper bars with corners (for example, turning radius is 13 mm) are used. The flexible connection has two benefits, namely the flexible connection can reduce the damage to the external connection during explosion, and the flexible connection can reduce the machining precision requirement, is convenient to install, and reduces the acting force of the impact force on the upper 202 and lower 203 of the IGBT outgoing copper bars during capacitor breakdown through the deformation of the left outgoing copper bar 302 and the right outgoing copper bar 303 of the thyristor when the thyristor is in overvoltage breakdown short circuit failure.
In the embodiment of the present invention, referring to fig. 1 and 2, the module housing includes a module top panel 101, a module right side panel 102, a module front panel 104, a module left side panel 105 and a module rear panel (not shown in the drawings), the module top panel 101, the module right side panel 102, the module front panel 104, the module left side panel 105 and the module rear panel are sequentially spliced to form a housing of the first component, and the module housing and the module bottom panel 103 are spliced together to form a box-type structure to protect the first component inside.
In the preferred embodiment of the present invention, a plurality of oblong holes are formed in the module upper panel 101, the module right side panel 102 and the module left side panel 105, so as to realize the release of the air pressure during the overvoltage breakdown of the thyristor.
In a preferred embodiment of the present invention, the modular front panel 104 comprises: a front upper panel and a front lower panel; wherein, the front upper panel includes: at least one first through hole; the IGBT outgoing copper bar upper 202 is connected with the outside through at least one first through hole; the front lower panel includes: at least one second through hole; the IGBT outlet copper bar lower 203 is connected to the outside through at least one second through hole.
As shown in fig. 2, the front upper panel includes a through hole that can be used to pass through the IGBT outlet copper bar 202 as an opening for the IGBT crimp assembly to connect to the outside. The front lower panel includes a through hole that can be used to pass through the IGBT outlet copper bar lower 203 as an opening for the IGBT crimp assembly to connect with the outside. It should be noted that, when the module front panel 104 is divided into the front upper panel and the front lower panel, in order to perform operations such as disassembly and overhaul on the IGBT crimping assembly, only the panel in front of the corresponding position needs to be disassembled, and the whole module front panel does not need to be operated, so that the workload is reduced, and other devices are not affected.
The device has the beneficial effects that: under the condition of overvoltage breakdown of the thyristor, pressure air flow can be released through openings of each panel, the mechanical force of explosion of the thyristor is attenuated through deformation of two outgoing copper bars of the thyristor, the deformation of the IGBT outgoing copper bars can be controlled through the reinforcing copper bars added at the weak positions, the integrity of the module under the condition of overvoltage breakdown of the thyristor is finally ensured, and the reliable operation of the whole flexible direct-current converter valve product is ensured.
The invention relates to an explosion-proof high-capacity multi-level full-bridge module device, which comprises the following mounting processes:
first, the capacitor 106 is fixed to the module base plate 103.
Next, the IGBT wire copper bar upper 202, the IGBT wire copper bar lower 203, the IGBT and other devices are crimped, completing the IGBT crimp assembly 201.
Next, the thyristor assembly 301, the IGBT crimp assembly 201, and the bypass switch 401 are fixed to the module base plate 103.
Next, the reinforcing copper bars a501 and B502 are attached to the IGBT outgoing copper bar upper 202 and the IGBT outgoing copper bar lower 203.
And finally, all wiring work is finished, the single electrical test work of the module unit is finished, and all work of the single module unit is finished.
The module unit can be transported to the site alone or can be fixed to the valve section (the module is finally fixed to the valve section on site, generally 6 modules form one valve section, and one valve tower is formed by N valve sections) and then transported to the engineering site integrally.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that it will be apparent to those skilled in the art that modifications and variations can be made without departing from the technical principles of the present invention, and these modifications and variations should also be regarded as the scope of the invention.
Claims (5)
1. An explosion-proof type large capacity multi-level full bridge module device, which is characterized by comprising: the first assembly, the second assembly and the module base plate; the second component is fixed at one end of the module base plate; the first component and the second component are fixed at the other end of the module bottom plate after being butted,
The first assembly includes: the module shell, and the IGBT crimping component, the thyristor crimping component and the bypass switch which are arranged inside the module shell,
The IGBT crimping assembly comprises crimping type IGBTs, and alternating current outgoing terminals of the IGBTs are respectively led out of an IGBT outgoing copper bar and under the IGBT outgoing copper bar; the weak points on the IGBT outgoing line copper bar and the weak points under the IGBT outgoing line copper bar are respectively fixed with a reinforced copper bar A and a reinforced copper bar B,
Two ends of the bypass switch are respectively fixed on the IGBT outgoing line copper bar and the end face under the IGBT outgoing line copper bar;
The thyristor crimping assembly comprises a crimping thyristor, wherein both ends of the thyristor are respectively led out of a left outgoing line copper bar and a right outgoing line copper bar of the thyristor; the left outlet copper bar of the thyristor and the right outlet copper bar of the thyristor are respectively fixed on the end surfaces of the IGBT outlet copper bar and the IGBT outlet copper bar;
The second assembly includes: a capacitor;
The middle part of the IGBT outgoing copper bar is in pressure welding with the reinforced copper bar A, and the middle part of the IGBT outgoing copper bar is in pressure welding with the reinforced copper bar B;
the left outgoing line copper bar of the thyristor and the right outgoing line copper bar of the thyristor are both soft connection copper bars.
2. The explosion-proof high-capacity multi-level full-bridge module device according to claim 1, wherein the left outgoing line copper bar of the thyristor and the right outgoing line copper bar of the thyristor are soft connection copper bars with corners.
3. The explosion-proof type large-capacity multi-level full-bridge module device according to claim 1, wherein the module shell comprises a module upper panel, a module right side plate, a module front panel, a module left side plate and a module rear panel, the module upper panel, the module right side plate, the module front panel, the module left side plate and the module rear panel are sequentially spliced to form the shell of the first assembly, and the module shell and the module bottom plate are spliced together to form a box-type structure.
4. An explosion-proof high-capacity multi-level full bridge module device according to claim 3, wherein the module upper panel, the module right side plate and the module left side plate are provided with oblong holes so as to release air flow pressure when the thyristor breaks down due to overvoltage.
5. An explosion-proof high capacity multi-level full bridge modular device as defined in claim 3, wherein said modular front panel comprises: a front upper panel and a front lower panel; wherein, the front upper panel includes: at least one first through hole; the IGBT outgoing copper bar is connected with the outside through at least one first through hole; the front lower panel includes: at least one second through hole; the lower part of the IGBT outgoing copper bar is connected with the outside through at least one second through hole.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010757765.5A CN111769749B (en) | 2020-07-31 | 2020-07-31 | Explosion-proof type large-capacity multi-level full-bridge module device |
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| CN202010757765.5A CN111769749B (en) | 2020-07-31 | 2020-07-31 | Explosion-proof type large-capacity multi-level full-bridge module device |
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| CN111769749A CN111769749A (en) | 2020-10-13 |
| CN111769749B true CN111769749B (en) | 2024-08-13 |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN212518813U (en) * | 2020-07-31 | 2021-02-09 | 中国南方电网有限责任公司超高压输电公司 | Explosion-proof type high-capacity multi-level full-bridge module device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103354232B (en) * | 2013-06-17 | 2015-08-26 | 许继电气股份有限公司 | A kind of submodule in parallel for flexible DC power transmission |
| CN105355611A (en) * | 2015-09-29 | 2016-02-24 | 特变电工新疆新能源股份有限公司 | High-capacity water-cooling power unit |
| CN205104487U (en) * | 2015-11-05 | 2016-03-23 | 南京南瑞继保电气有限公司 | Many level module unit based on crimping formula IGBT |
| JP6568030B2 (en) * | 2016-09-21 | 2019-08-28 | 株式会社日立産機システム | Power converter |
| US10917992B2 (en) * | 2017-01-13 | 2021-02-09 | Cree Fayetteville, Inc. | High power multilayer module having low inductance and fast switching for paralleling power devices |
| CN207720015U (en) * | 2017-10-18 | 2018-08-10 | 南京南瑞继保电气有限公司 | A kind of more level die sets based on compression joint type IGBT |
| CN110138191A (en) * | 2018-02-02 | 2019-08-16 | 荣信汇科电气技术有限责任公司 | The error protection and shunting device of modular multi-level converter power module |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN212518813U (en) * | 2020-07-31 | 2021-02-09 | 中国南方电网有限责任公司超高压输电公司 | Explosion-proof type high-capacity multi-level full-bridge module device |
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