CN111769191B - Ultraviolet LED chip heat dissipation composite substrate - Google Patents

Abstract

The invention discloses an ultraviolet LED chip heat dissipation composite substrate, which comprises an SiC heat conduction layer, a diamond heat conduction layer, a graphene heat conduction layer and an aluminum nitride single crystal heat conduction layer which are sequentially arranged from top to bottom; in the technical scheme, the heat dissipation composite substrate formed by multiple layers of high-thermal-conductivity materials can quickly realize the spread of heat energy in the transverse and longitudinal directions, improve the heat dissipation efficiency of the ultraviolet LED chip, and reduce the efficiency reduction and the aging of the packaging structure of the ultraviolet LED caused by heat accumulation.

Description

A kind of ultraviolet LED chip heat dissipation composite substrate

technical field

The invention relates to the technical field of optoelectronic devices, in particular to a heat dissipation composite substrate for an ultraviolet LED chip.

Background technique

Ultraviolet light emitting diodes (LEDs) have important applications in the fields of physical sterilization, lighting with high color rendering index, and high-density optical storage due to their advantages of short wavelength, high photon energy, and uniform beam. At present, a large number of researches have made important breakthroughs in technologies such as crystal quality, high A1 composition and short-wavelength structure design, and successfully prepared deep ultraviolet LED devices below 300 nanometers, achieving milliwatt-level power output, and achieving high reliability. great progress has been made.

However, it is well known that LEDs generate a large amount of heat during operation. If the heat cannot be dissipated in time, it will have a great impact on the service life and normal operation of UV LEDs. Promotion and application of UV LED.

Therefore, the existing technology still needs to be improved and developed.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide an ultraviolet LED chip heat dissipation composite substrate, which aims to solve the problem that the existing ultraviolet LED generates a large amount of heat during operation, and the heat accumulation is not easy to dissipate, which affects the service life and normal operation of the ultraviolet LED, resulting in reduced efficiency and packaging. The problem of structural aging.

The technical scheme of the present invention is as follows: an ultraviolet LED chip heat dissipation composite substrate, which comprises a SiC thermal conduction layer, a diamond thermal conduction layer, a graphene thermal conduction layer and an aluminum nitride single crystal thermal conduction layer arranged in order from top to bottom.

The ultraviolet LED chip heat-dissipating composite substrate, wherein, the SiC heat-conducting layer, the diamond heat-conducting layer, the graphene heat-conducting layer and the aluminum nitride single-crystal heat-conducting layer are bonded between adjacent heat-conducting layers by a high-heat-conducting heat-conducting adhesive .

In the ultraviolet LED chip heat dissipation composite substrate, the dislocation density of the SiC heat-conducting layer is greater than 10 ²⁰ cm ^-3 , and the SiC heat-conducting layer has a cubic phase SiC single crystal structure.

In the ultraviolet LED chip heat dissipation composite substrate, the dislocation density of the SiC heat-conducting layer is greater than 10 ²⁰ cm ^-3 , and the SiC heat-conducting layer has a hexagonal SiC single crystal structure.

The ultraviolet LED chip heat dissipation composite substrate, wherein the dislocation density of the SiC heat-conducting layer is greater than 10 ²⁰ cm ^-3 , and the SiC heat-conducting layer is a superlattice formed by overlapping a cubic phase SiC single crystal and a hexagonal phase SiC single crystal The thickness of the cubic SiC single crystal is 1.37~3.96 times that of the hexagonal SiC single crystal; the total thickness of the superlattice structure formed by the cubic SiC single crystal and the hexagonal SiC single crystal is greater than 100 microns and less than 200 microns.

The ultraviolet LED chip heat-dissipating composite substrate, wherein the dislocation density of the diamond heat-conducting layer is greater than 10 ¹⁷ cm ^-3 , and the diamond heat-conducting layer is an n-type diamond heat-conducting layer or a p-type diamond heat-conducting layer or an insulating diamond heat-conducting layer; The thickness of the thermally conductive layer is greater than 100 microns and less than 200 microns.

The ultraviolet LED chip heat-dissipating composite substrate, wherein the dislocation density of the graphene heat-conducting layer is greater than 10 ¹⁷ cm ^-3 , and the graphene heat-conducting layer is an n-type graphene heat-conducting layer or a p-type graphene heat-conducting layer; graphene The thickness of the thermally conductive layer is greater than 1 nanometer and less than 200 nanometers.

The ultraviolet LED chip heat dissipation composite substrate, wherein the dislocation density of the aluminum nitride single crystal thermal conductive layer is greater than 10 ¹⁷ cm ^-3 , and the aluminum nitride single crystal thermal conductive layer is an n-type aluminum nitride single crystal thermal conductive layer or The p-type aluminum nitride single crystal heat-conducting layer or the insulating aluminum nitride single-crystal heat-conducting layer; the thickness of the aluminum nitride single-crystal heat-conducting layer is greater than 100 microns and less than 200 microns.

In the ultraviolet LED chip heat dissipation composite substrate, the crystal region of the aluminum nitride single crystal in the aluminum nitride single crystal heat-conducting layer is oriented to the m-plane, the a-plane or the c-plane.

Beneficial effects of the present invention: The present invention provides a heat dissipation composite substrate for an ultraviolet LED chip, and the heat dissipation composite substrate formed by using multiple layers of high thermal conductivity materials can quickly realize the propagation of heat energy in the lateral and longitudinal directions, and improve the performance of the ultraviolet LED chip. Heat dissipation efficiency, reduce the efficiency reduction and packaging structure aging of UV LED due to thermal accumulation.

Description of drawings

FIG. 1 is a schematic structural diagram of the ultraviolet LED chip heat dissipation composite substrate in the present invention.

Detailed ways

Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary, only used to explain the present invention, and should not be construed as a limitation of the present invention.

In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", " rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc., or The positional relationship is based on the orientation or positional relationship shown in the accompanying drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, Therefore, it should not be construed as a limitation of the present invention. In addition, the terms "first" and "second" are only used for descriptive purposes, and should not be construed as indicating or implying relative importance or implying the number of indicated technical features. Thus, features delimited with "first", "second" may expressly or implicitly include one or more of said features. In the description of the present invention, "plurality" means two or more, unless otherwise expressly and specifically defined.

In the description of the present invention, it should be noted that the terms "installed", "connected" and "connected" should be understood in a broad sense, unless otherwise expressly specified and limited, for example, it may be a fixed connection or a detachable connection Connection, or integral connection; it can be mechanical connection, electrical connection or can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction of two elements relation. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific situations.

In the present invention, unless otherwise expressly specified and limited, a first feature "on" or "under" a second feature may include the first and second features in direct contact, or may include the first and second features Not directly but through additional features between them. Also, the first feature being "above", "over" and "above" the second feature includes the first feature being directly above and obliquely above the second feature, or simply means that the first feature is level higher than the second feature. The first feature is "below", "below" and "below" the second feature includes the first feature being directly below and diagonally below the second feature, or simply means that the first feature has a lower level than the second feature.

The following disclosure provides many different embodiments or examples for implementing different structures of the invention. In order to simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present disclosure may repeat reference numerals and/or reference letters in different instances for the purpose of simplicity and clarity and not in itself indicative of a relationship between the various embodiments and/or arrangements discussed. In addition, the present disclosure provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.

As shown in FIG. 1 , an ultraviolet LED chip heat dissipation composite substrate includes a SiC thermal conduction layer 1 , a diamond thermal conduction layer 2 , a graphene thermal conduction layer 3 and an aluminum nitride single crystal thermal conduction layer 4 arranged in order from top to bottom.

In this technical solution, the heat dissipation composite substrate formed by using multiple layers of high thermal conductivity materials can quickly realize the spread of heat energy in the lateral and longitudinal directions, improve the heat dissipation efficiency of the ultraviolet LED chip, and reduce the efficiency reduction of the ultraviolet LED due to thermal accumulation. and packaging structure aging.

In some specific embodiments, the SiC thermally conductive layer 1, the diamond thermally conductive layer 2, the graphene thermally conductive layer 3 and the aluminum nitride single crystal thermally conductive layer 4 are bonded between adjacent thermally conductive layers by a high thermal conductivity thermally conductive adhesive. .

In some specific embodiments, the dislocation density of the SiC thermally conductive layer 1 is greater than 10 ²⁰ cm ⁻³ , and the SiC thermally conductive layer 1 has a cubic phase SiC single crystal structure.

In some specific embodiments, the dislocation density of the SiC thermally conductive layer 1 is greater than 10 ²⁰ cm ⁻³ , and the SiC thermally conductive layer 1 has a hexagonal SiC single crystal structure.

In some specific embodiments, the dislocation density of the SiC thermally conductive layer 1 is greater than 10 ²⁰ cm ^-3 , and the SiC thermally conductive layer 1 is a superlattice structure formed by overlapping a cubic phase SiC single crystal and a hexagonal phase SiC single crystal, The cubic SiC single crystal is 1.37~3.96 times thicker than the hexagonal SiC single crystal; the total thickness of the superlattice structure formed by the cubic SiC single crystal and the hexagonal SiC single crystal is greater than 100 microns and less than 200 microns.

In some specific embodiments, the dislocation density of the diamond thermally conductive layer 2 is greater than 10 ¹⁷ cm ^-3 , and the diamond thermally conductive layer 2 is an n-type diamond thermally conductive layer or a p-type diamond thermally conductive layer or an insulating diamond thermally conductive layer; 2 The thickness is greater than 100 microns and less than 200 microns.

In some specific embodiments, the dislocation density of the graphene thermally conductive layer 3 is greater than 10 ¹⁷ cm ^-3 , and the graphene thermally conductive layer 3 is an n-type graphene thermally conductive layer or a p-type graphene thermally conductive layer; the graphene thermally conductive layer 3 The thickness is greater than 1 nanometer and less than 200 nanometers.

In some specific embodiments, the dislocation density of the aluminum nitride single crystal thermal conductive layer 4 is greater than 10 ¹⁷ cm ⁻³ , and the aluminum nitride single crystal thermal conductive layer 4 is an n-type aluminum nitride single crystal thermal conductive layer or a p-type thermal conductive layer. The aluminum nitride single crystal heat-conducting layer or insulating aluminum nitride single-crystal heat-conducting layer; the thickness of the aluminum nitride single-crystal heat-conducting layer 4 is greater than 100 microns and less than 200 microns; The domain orientation is m-plane or a-plane or c-plane.

In the description of this specification, reference to the terms "one embodiment," "some embodiments," "exemplary embodiment," "example," "specific example," or "some examples", etc. A particular feature, structure, material, or characteristic described in this embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

It should be understood that the application of the present invention is not limited to the above examples. For those of ordinary skill in the art, improvements or transformations can be made according to the above descriptions, and all these improvements and transformations should belong to the protection scope of the appended claims of the present invention.

Claims (8)

1. The ultraviolet LED chip heat dissipation composite substrate is characterized by comprising a SiC heat conduction layer, a diamond heat conduction layer, a graphene heat conduction layer and an aluminum nitride single crystal heat conduction layer which are sequentially arranged from top to bottom, wherein the dislocation density of the diamond heat conduction layer is greater than 10¹⁷cm^-3The diamond heat conduction layer is an n-type diamond heat conduction layer or a p-type diamond heat conduction layer or an insulating diamond heat conduction layer; diamondThe thickness of the stone heat conducting layer is more than 100 microns and less than 200 microns.

2. The ultraviolet LED chip heat dissipation composite substrate of claim 1, wherein adjacent heat conduction layers of the SiC heat conduction layer, the diamond heat conduction layer, the graphene heat conduction layer and the aluminum nitride single crystal heat conduction layer are bonded through a high-heat-conductivity heat conduction adhesive.

3. The uv LED chip die attach spreader composite substrate of claim 1, wherein the SiC thermal conductive layer has a dislocation density greater than 10²⁰cm^-3The SiC heat conducting layer is of a cubic phase SiC single crystal structure.

4. The uv LED chip die attach spreader composite substrate of claim 1, wherein the SiC thermal conductive layer has a dislocation density greater than 10²⁰cm^-3The SiC heat conducting layer is of a hexagonal phase SiC single crystal structure.

5. The uv LED chip die attach spreader composite substrate of claim 1, wherein the SiC thermal conductive layer has a dislocation density greater than 10²⁰cm^-3The SiC heat conduction layer is a superlattice structure formed by overlapping cubic phase SiC single crystals and hexagonal phase SiC single crystals, wherein the thickness of the cubic phase SiC single crystals is 1.37-3.96 times that of the hexagonal phase SiC single crystals; wherein the total thickness of the superlattice structure formed by the cubic phase SiC single crystal and the hexagonal phase SiC single crystal is more than 100 microns and less than 200 microns.

6. The ultraviolet LED chip die attach dissipation composite substrate of claim 1, wherein the graphene thermal conductive layer has a dislocation density greater than 10¹⁷cm^-3The graphene heat conduction layer is an n-type graphene heat conduction layer or a p-type graphene heat conduction layer; the thickness of the graphene heat conduction layer is larger than 1 nanometer and smaller than 200 nanometers.

7. The ultraviolet LED chip heat-dissipating composite substrate according to claim 1, wherein the aluminum nitride single crystal thermal conductive layer has a dislocation densityDegree greater than 10¹⁷cm^-3The aluminum nitride single crystal heat conduction layer is an n-type aluminum nitride single crystal heat conduction layer or a p-type aluminum nitride single crystal heat conduction layer or an insulating aluminum nitride single crystal heat conduction layer; the thickness of the aluminum nitride single crystal heat conduction layer is more than 100 microns and less than 200 microns.

8. The ultraviolet LED chip heat-dissipation composite substrate as recited in claim 7, wherein a crystal region of the aluminum nitride single crystal in the aluminum nitride single crystal heat-conducting layer is oriented to an m-plane, an a-plane or a c-plane.

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