CN111769139A - Display panel, preparation method thereof and display device - Google Patents
Display panel, preparation method thereof and display device Download PDFInfo
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- CN111769139A CN111769139A CN202010577403.8A CN202010577403A CN111769139A CN 111769139 A CN111769139 A CN 111769139A CN 202010577403 A CN202010577403 A CN 202010577403A CN 111769139 A CN111769139 A CN 111769139A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The application discloses a display panel, a preparation method thereof and a display device, wherein the display panel comprises a first PI layer; the first barrier layer is arranged on the first PI layer; the buffer layer is arranged on one side, far away from the first PI layer, of the first blocking layer; the polycrystalline silicon layer is arranged on one side, far away from the first blocking layer, of the buffer layer; the laser shielding layer is arranged between the first PI layer and the first blocking layer; the laser shielding layer is arranged between the first blocking layer and the buffer layer; or/and the laser shielding layer is arranged between the buffer layer and the polycrystalline silicon layer.
Description
Technical Field
The application relates to the technical field of display panels, in particular to a display panel, a preparation method of the display panel and a display device.
Background
The conventional organic light-Emitting Diode (OLED) structure has the advantages of self-luminescence, wide viewing angle, high contrast, low power consumption, and very high response rate, and has become one of the mainstream display technologies.
The OLED display panel adopts a very thin organic material coating and a substrate, and the current is switched on, so that the organic material emits light for display. At present, the OLED adopts Polyimide (PI) as a flexible substrate, the polyimide is first coated on a glass substrate, an amorphous silicon layer is then prepared after a barrier layer and a buffer layer are prepared on the PI substrate by a chemical vapor deposition method, and an Excimer Laser Annealing (ELA) is performed on the amorphous silicon layer to form a polycrystalline silicon layer.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a display panel provided in the prior art, in which a display panel 100 includes a glass substrate 110, a first PI layer 120, a first barrier layer 130, a second PI layer 140, a second barrier layer 150, a buffer layer 160, and an amorphous silicon layer 170. Since the barrier layer and the buffer layer are usually made of silicon oxide or silicon nitride materials, and the transmittances of the materials are very high, when excimer laser annealing is performed on the amorphous silicon layer, laser can easily penetrate through the PI layer below the barrier layer and the buffer layer to burn, and even the PI layer can be peeled off.
Therefore, there is a need to develop a new display panel and a method for manufacturing the same to overcome the drawbacks of the prior art.
Disclosure of Invention
An object of the present invention is to provide a display panel, which can solve the problem that laser easily penetrates through a barrier layer and a buffer layer to burn an underlying PI layer and even peel off the PI layer when the display panel in the prior art performs excimer laser annealing on an amorphous silicon layer.
To achieve the above object, the present invention provides a display panel, including a first PI layer; the first barrier layer is arranged on the first PI layer; the buffer layer is arranged on one side, far away from the first PI layer, of the first blocking layer; the polycrystalline silicon layer is arranged on one side, far away from the first blocking layer, of the buffer layer; the laser shielding layer is arranged between the first PI layer and the first blocking layer; the laser shielding layer is arranged between the first blocking layer and the buffer layer; or/and the laser shielding layer is arranged between the buffer layer and the polycrystalline silicon layer.
One or more laser shielding layers are arranged between the PI layer and the polycrystalline silicon layer, so that laser generated when excimer laser annealing is carried out on the amorphous silicon layer can be effectively blocked, and the PI layer below the PI layer is prevented from being burnt and stripped.
Further, in other embodiments, the material of the laser shielding layer adopts Al2O3. In other embodiments, the material of the laser shielding layer may be other materials with low light transmittance and high temperature resistance, and is not limited toIn Al2O3The first PI layer is not burned when the excimer laser annealing is performed on the amorphous silicon layer.
Further, in other embodiments, the thickness of the laser shielding layer ranges from 1nm to 50 nm.
Further, in other embodiments, the display panel further includes a second barrier layer disposed on a side of the first PI layer away from the first barrier layer; the second PI layer is arranged on one side, far away from the first PI layer, of the second barrier layer; and the glass substrate is arranged on one side, far away from the second barrier layer, of the second PI layer.
Further, in other embodiments, the light transmittance of the laser shielding layer is less than 10%. When excimer laser annealing is carried out on the amorphous silicon layer, the PI layer is guaranteed not to be burnt, and the yield of the display panel is improved.
In order to achieve the above object, the present invention further provides a manufacturing method for manufacturing the display panel according to the present invention, the manufacturing method including the steps of: preparing a first PI layer; preparing a laser shielding layer on the first PI layer; preparing a first barrier layer on the laser shielding layer; or/and preparing a laser shielding layer on the first barrier layer; preparing a buffer layer on the first barrier layer; or/and preparing a laser shielding layer on the buffer layer; and preparing an amorphous silicon layer on the buffer layer.
Further, in other embodiments, the step of preparing the amorphous silicon layer further includes performing excimer laser annealing on the amorphous silicon layer to form a polysilicon layer.
One or more laser shielding layers are prepared between the PI layer and the polycrystalline silicon layer, so that laser generated when excimer laser annealing is carried out on the amorphous silicon layer can be effectively blocked, and the PI layer below the PI layer is prevented from being burnt and stripped.
Further, in other embodiments, the laser shielding layer is prepared by chemical deposition or inkjet printing.
Further, in other embodiments, wherein the first barrier layer and the buffer layer are prepared by chemical deposition.
Further, in other embodiments, the material of the laser shielding layer adopts Al2O3，The thickness range of the laser shielding layer is 1nm-50 nm. In other embodiments, the laser shielding layer may be made of other materials with low light transmittance and high temperature resistance, and is not limited to Al2O3The first PI layer is not burned when the excimer laser annealing is performed on the amorphous silicon layer.
Further, in other embodiments, the light transmittance of the laser shielding layer is less than 10%, and the PI layer is not burned when the amorphous silicon layer is subjected to excimer laser annealing, so that the yield of the display panel is improved.
In order to achieve the above object, the present invention further provides a display device including the display panel according to the present invention.
Compared with the prior art, the invention has the beneficial effects that: the invention provides a display panel, a preparation method thereof and a display device2O3，Al2O3The amorphous silicon laser is compact, low in light transmittance and high-temperature resistant, can effectively block laser when excimer laser annealing is carried out on the amorphous silicon layer, and prevents burn and peeling of the PI layer below.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a display panel provided in the prior art;
fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 3 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention.
Description of the drawings in the background art:
a display panel-100; a glass substrate-110;
a first PI layer-120;
a first barrier layer-130;
a second PI layer-140; a second barrier layer-150;
a buffer layer-160; amorphous silicon layer-170.
Description of the figures in the detailed description:
a display panel-100; a glass substrate-110;
a second PI layer-140; a second barrier layer-150;
a first PI layer-120; laser shielding layer-200;
a first barrier layer-130;
a buffer layer-160; amorphous silicon layer-170.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a display panel 100 according to an embodiment of the present invention, in which the display panel 100 includes a glass substrate 110, a second PI layer 140, a second barrier layer 150, a first PI layer 120, a laser blocking layer 200, a first barrier layer 130, a buffer layer 160, and a polysilicon layer 170.
A second PI layer 140 disposed on the glass substrate 110; a second barrier layer 150 disposed on the second PI layer 120; the first PI layer 120 is arranged on the second barrier layer 150, the laser shielding layer 200 is arranged on the first PI layer 120, and the first barrier layer 130 is arranged on the laser shielding layer 200; the buffer layer 160 is disposed on the first barrier layer 130; the polysilicon layer 170 is disposed on the buffer layer.
The thickness of the laser shielding layer 200 is 1nm to 50nm, which is almost negligible for the display panel, so that the thickness of the display panel is not increased, and the appearance of the display panel is affected.
The light transmittance of the laser shielding layer 200 is less than 10%, so that the first PI layer 120 and the second PI layer are not burned when the amorphous silicon layer is subjected to excimer laser annealing, and the yield of the display panel is improved.
In this embodiment, Al is used as the material of the laser shielding layer 2002O3. In other embodiments, the material of the laser shielding layer 200 may be other materials with low light transmittance and high temperature resistance, and is not limited to Al in this embodiment2O3As long as the first PI layer 120 is not burned when the excimer laser annealing is performed on the amorphous silicon layer.
In this embodiment, the laser shielding layer 200 is disposed between the first PI layer 120 and the first blocking layer 130, and in other embodiments, the laser shielding layer 200 may also be disposed between the first blocking layer 130 and the buffer layer 160, or between the buffer layer 160 and the polysilicon layer 170, which is not limited herein, as long as the laser shielding layer 200 is disposed between the PI layer and the polysilicon layer 170, so as to ensure that the first PI layer 120 is not burned when performing excimer laser annealing on the amorphous silicon layer.
Referring to fig. 3, fig. 3 is a flowchart illustrating a method for manufacturing a display panel 100 according to an embodiment of the present invention, which includes steps 1-5.
Step 1: a first PI layer 120 is prepared.
In other embodiments, the step of preparing the first PI layer 120 further comprises
Providing a glass substrate 110; preparing a second PI layer 140 on the glass substrate 110; a second barrier layer 150 is prepared on the second PI layer 120.
Wherein the first PI layer 120 is prepared on the second barrier layer 150. The second barrier layer 150 is prepared by means of chemical deposition.
Step 2: a laser blocking layer 200 is formed on the first PI layer 120.
The laser shielding layer 200 is prepared by chemical deposition or ink-jet printing.
The thickness of the laser shielding layer 200 is 1nm to 50nm, which is almost negligible for the display panel, so that the thickness of the display panel is not increased, and the appearance of the display panel is affected.
The light transmittance of the laser shielding layer 200 is less than 10%, so that the first PI layer 120 and the second PI layer are not burned when the amorphous silicon layer is subjected to excimer laser annealing, and the yield of the display panel is improved.
In this embodiment, Al is used as the material of the laser shielding layer 2002O3. In other embodiments, the material of the laser shielding layer 200 may be other materials with low light transmittance and high temperature resistanceMaterial is not limited to Al in the present embodiment2O3As long as the first PI layer 120 is not burned when the excimer laser annealing is performed on the amorphous silicon layer.
And step 3: preparing a first barrier layer 130 on the laser shielding layer 200; the first barrier layer 130 is prepared by means of chemical deposition.
And 4, step 4: preparing a buffer layer 160 on the first barrier layer 130; the buffer layer 160 is prepared by chemical deposition.
And 5: an amorphous silicon layer is prepared on the buffer layer 160.
The step of preparing the amorphous silicon layer further includes performing excimer laser annealing on the amorphous silicon layer to form a polysilicon layer 170.
In this embodiment, the laser shielding layer 200 is prepared between the first PI layer 120 and the first barrier layer 130, in other embodiments, the laser shielding layer 200 may also be prepared between the first barrier layer 130 and the buffer layer 160, or between the buffer layer 160 and the polysilicon layer 170, which is not limited herein, as long as the laser shielding layer 200 is prepared between the PI layer and the polysilicon layer 170, so as to ensure that the first PI layer 120 is not burned when performing excimer laser annealing on the amorphous silicon layer.
In order to achieve the above object, the present invention further provides a display device including the display panel 100 according to the present invention.
The invention has the beneficial effects that: the invention provides a display panel 100, a preparation method thereof and a display device, wherein a layer of Al is prepared on a PI layer2O3，Al2O3The amorphous silicon laser is compact, low in light transmittance and high-temperature resistant, can effectively block laser when excimer laser annealing is carried out on the amorphous silicon layer, and prevents burn and peeling of the PI layer below.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The display panel, the manufacturing method thereof, and the display device provided in the embodiments of the present application are described in detail above, and specific examples are applied in the description to explain the principle and the implementation of the present application, and the description of the embodiments above is only used to help understanding the technical solution and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. A display panel, comprising:
a first PI layer;
the first barrier layer is arranged on the first PI layer;
the buffer layer is arranged on one side, far away from the first PI layer, of the first blocking layer;
the polycrystalline silicon layer is arranged on one side, far away from the first blocking layer, of the buffer layer;
the laser shielding layer is arranged between the first PI layer and the first blocking layer; the laser shielding layer is arranged between the first blocking layer and the buffer layer; or/and the laser shielding layer is arranged between the buffer layer and the polycrystalline silicon layer.
2. The display panel according to claim 1, wherein the laser shielding layer is made of Al2O3。
3. The display panel according to claim 1, wherein the laser blocking layer has a thickness in a range of 1nm to 50 nm.
4. The display panel of claim 1, wherein the display panel further comprises
The second barrier layer is arranged on one side, far away from the first barrier layer, of the first PI layer;
the second PI layer is arranged on one side, far away from the first PI layer, of the second barrier layer;
and the glass substrate is arranged on one side, far away from the second barrier layer, of the second PI layer.
5. A method for manufacturing the display panel according to claim 1, comprising the steps of:
preparing a first PI layer;
preparing a laser shielding layer on the first PI layer;
preparing a first barrier layer on the laser shielding layer; or/and preparing a laser shielding layer on the first barrier layer;
preparing a buffer layer on the first barrier layer; or/and preparing a laser shielding layer on the buffer layer;
and preparing an amorphous silicon layer on the buffer layer.
6. The method of claim 5, wherein the step of preparing the amorphous silicon layer further comprises
And performing excimer laser annealing on the amorphous silicon layer to form a polycrystalline silicon layer.
7. The method according to claim 5, wherein the laser shielding layer is formed by chemical deposition or ink-jet printing.
8. The method of claim 5, wherein the first barrier layer and the buffer layer are formed by chemical deposition.
9. The method according to claim 5, wherein Al is used as a material of the laser shielding layer2O3，The thickness range of the laser shielding layer is 1nm-50 nm.
10. A display device comprising the display panel according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010577403.8A CN111769139A (en) | 2020-06-23 | 2020-06-23 | Display panel, preparation method thereof and display device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010577403.8A CN111769139A (en) | 2020-06-23 | 2020-06-23 | Display panel, preparation method thereof and display device |
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| CN111769139A true CN111769139A (en) | 2020-10-13 |
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| CN202010577403.8A Pending CN111769139A (en) | 2020-06-23 | 2020-06-23 | Display panel, preparation method thereof and display device |
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| CN107403746A (en) * | 2016-05-19 | 2017-11-28 | 株式会社日本显示器 | Display device and its manufacture method |
| CN107623087A (en) * | 2017-10-30 | 2018-01-23 | 武汉华星光电半导体显示技术有限公司 | Flexible OLED display panel and preparation method thereof |
| US20190044079A1 (en) * | 2017-08-04 | 2019-02-07 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Flexible base plate of oled display panel and method for manufacturing the same |
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2020
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| US20130037804A1 (en) * | 2011-08-10 | 2013-02-14 | Jae-Seob LEE | Display device |
| US20130187164A1 (en) * | 2012-01-20 | 2013-07-25 | Sony Corporation | Thin-film transistor, method of manufacturing the same, display unit, and electronic apparatus |
| US20150021607A1 (en) * | 2013-07-19 | 2015-01-22 | Samsung Display Co., Ltd. | Thin film transistor substrate, method of manufacturing the same, and organic light emitting diode display using the same |
| CN104143565A (en) * | 2014-07-28 | 2014-11-12 | 京东方科技集团股份有限公司 | A flexible display substrate and its preparation method and display device |
| CN107403746A (en) * | 2016-05-19 | 2017-11-28 | 株式会社日本显示器 | Display device and its manufacture method |
| US20190044079A1 (en) * | 2017-08-04 | 2019-02-07 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Flexible base plate of oled display panel and method for manufacturing the same |
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Application publication date: 20201013 |