CN111769042B - Ion implantation method - Google Patents
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- CN111769042B CN111769042B CN202010680105.1A CN202010680105A CN111769042B CN 111769042 B CN111769042 B CN 111769042B CN 202010680105 A CN202010680105 A CN 202010680105A CN 111769042 B CN111769042 B CN 111769042B
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- 238000005468 ion implantation Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 43
- 238000010894 electron beam technology Methods 0.000 claims abstract description 123
- 238000002513 implantation Methods 0.000 claims abstract description 37
- 238000002347 injection Methods 0.000 claims description 35
- 239000007924 injection Substances 0.000 claims description 35
- 238000010884 ion-beam technique Methods 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 abstract description 40
- 230000000694 effects Effects 0.000 abstract description 14
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 235000012431 wafers Nutrition 0.000 description 113
- 239000007943 implant Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013467 fragmentation Methods 0.000 description 2
- 238000006062 fragmentation reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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Abstract
The application discloses an ion implantation method, which comprises the steps of adding an electron generator into an ion implanter, carrying out electron bombardment on an implantation sheet/piezoelectric wafer by utilizing an electron beam generated by the electron generator, wherein electrons in the electron beam can interact with positive ions formed on the surface of the implantation surface due to a pyroelectric effect, so that the formation of annular mountain patterns due to the pyroelectric effect of the piezoelectric wafer is inhibited, and the performances of the implantation sheet and a piezoelectric film obtained by the implantation sheet are improved.
Description
Technical Field
The application belongs to the field of semiconductor material preparation, and particularly relates to an ion implantation method.
Background
The piezoelectric material such as lithium niobate and lithium tantalate has a pyroelectric effect, wherein the pyroelectric effect is that atoms in a crystal lattice of the piezoelectric material are shifted in the cooling process, so that positive and negative electric centers in an original crystal lattice structure are shifted, and the surface of an injection sheet is charged.
In the ion implantation process, the temperature of the piezoelectric wafer gradually rises along with continuous implantation of ions, in the cooling process of the piezoelectric wafer with pyroelectric effect, along with continuous reduction of the product-temperature formed by the implanted wafer-piezoelectric wafer under the action of the pyroelectric effect, the surface of the implanted wafer is charged due to the change of an internal lattice structure, the surface of the implanted wafer is charged to further cause the ion in the original lattice structure of the implanted wafer to deviate from the original position, the lattice is further changed, the refractive index of the surface of the implanted wafer is changed along with the change, finally, the annular mountain pattern similar to volcanic can be observed on the surface of the implanted wafer by naked eyes, the structural difference of the implanted wafer near the annular mountain pattern can be found under a microscope, and tests show that the annular mountain pattern can reduce the performances of the implanted wafer and the piezoelectric film prepared by the implanted wafer.
Disclosure of Invention
The present application provides an ion implantation method, in which an electron generator is added to an ion implanter, and electron bombardment is performed on an implantation sheet/piezoelectric wafer by using an electron beam generated by the electron generator, wherein electrons in the electron beam can interact with positive ions formed on the surface of the implantation surface due to a pyroelectric effect, so that the formation of annular mountain patterns due to the pyroelectric effect of the piezoelectric wafer is suppressed, and the performance of the implantation sheet and a piezoelectric film obtained from the implantation sheet is improved.
An object of the present application is to provide a method of ion implantation, the method being implemented with an electron doping implanter comprising a first electron beam generator (1), an ion generator (2) and a piezoelectric wafer target (3), the method comprising:
mounting a piezoelectric wafer to be injected on the piezoelectric wafer target (3);
ion implantation is carried out on the piezoelectric wafer by utilizing the ion beam generated by the ion generator (2) to obtain an implantation sheet;
and carrying out electron bombardment on the injection sheet by using a first electron beam generated by the first electron beam generator (1).
According to the method, electron bombardment is conducted on the injection sheet, a large number of electrons are introduced into the surface of the injection sheet, and the electrons can be neutralized with positive charges accumulated by the injection sheet in the cooling process, so that annular mountain line patterns are prevented from being formed on the surface of the piezoelectric wafer.
In one realisable form, the first electron beam generator (1) comprises an electronic shower, an ultraviolet generator, an X-ray generator, or the like.
In one implementation, the beam current of the first electron beam is greater than 0.4A.
In one implementation, the beam current of the ion beam is less than 100 μΑ.
In one implementation, electron bombardment of the piezoelectric wafer with a second electron beam is continued during ion implantation of the piezoelectric wafer with the ionizer (2).
In the present implementation, the second electron beam is generated by the first electron beam generator (1) or by the second electron beam generator (4), and the second electron beam generator (4) is an electron beam generator arranged in the electron doping implanter and is different from the first electron beam generator (1).
In this implementation, the beam current of the ion beam is greater than or equal to 100 μΑ.
In this implementation, the flow rate of each electron in the second electron beam is substantially the same as the flow rate of each ion in the ion beam, and the flow direction is substantially the same.
Compared with the prior art, the method provided by the application introduces electrons to the surface of the piezoelectric wafer in the ion implantation process, so that electrons are gathered on the surface of the implantation sheet, and therefore, the annular mountain pattern formed on the surface of the implantation sheet due to the pyroelectric effect of the implantation sheet is eliminated, namely, the refractive index defect of the surface of the implantation sheet is eliminated. In addition, the applicant has surprisingly found that according to the method provided by the present application, electron bombardment is continuously performed on the piezoelectric wafer during ion implantation, and the problem that the piezoelectric wafer is easily broken during ion implantation, particularly during ion implantation with a large beam current, can be effectively reduced. The applicant considers through research and analysis that electrons introduced into the surface of the piezoelectric wafer can absorb positive ions remained in the ion implantation process and accumulated on the implantation surface of the piezoelectric wafer, so that phenomena such as ignition and discharge which possibly cause fracture of the surface of the piezoelectric wafer are avoided, and the yield of the implanted wafer is improved.
Drawings
FIG. 1 shows a schematic structure of an electron doping implanter;
fig. 2 shows a flow chart of an ion implantation method provided herein;
FIG. 3 shows a schematic diagram of another electron doping implanter;
FIG. 4a shows a schematic structural diagram of an electron doping implanter;
fig. 4b shows a schematic structural diagram of an electron doping implanter.
Description of the reference numerals
1-a first electron beam generator, 2-an ionizer, 3-a piezoelectric wafer target, 4-a second electron beam generator.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention. Rather, they are merely examples of methods consistent with aspects of the invention as detailed in the accompanying claims.
The ion implantation method provided in the present application is described in detail below by way of specific examples.
First, a brief description will be given of a usage scenario of the present solution.
For a piezoelectric material such as a lithium niobate wafer, electrons are difficult to move at a certain tangential implantation surface thereof, for example, a Z-cut implantation surface of a lithium niobate wafer, resulting in the possibility of positive charge accumulation at the implantation surface. The continuous accumulation of charges can lead to the ion deflection in the piezoelectric wafer to be in the original position, and finally, the refractive index of the ion deflection position is changed, and the macroscopic appearance is in a ring mountain pattern. According to the method, electrons are introduced to the surface of the piezoelectric wafer/the injection sheet, so that electrons are gathered on the surface of the injection sheet, and therefore annular mountain patterns formed on the surface of the injection sheet due to the pyroelectric effect of the injection sheet are eliminated, namely, the refractive index defects of the surface of the injection sheet are eliminated.
Specifically, the method provided by the present example may be implemented using an electron doping implanter that includes an electron beam generator configured to release an electron beam onto an implantation surface of a piezoelectric wafer, an ion emission source configured to release ions onto the implantation surface of the piezoelectric wafer, and a piezoelectric wafer target for securing a piezoelectric wafer to be implanted.
Fig. 1 shows a schematic structural diagram of an electron doping implanter, in one example, as shown in fig. 1, the electron includes a first electron beam generator 1, an ion generator 2, and a piezoelectric wafer target 3, where the piezoelectric wafer target 3 may be one or more, if the piezoelectric wafer target 3 is a plurality, all piezoelectric wafers mounted on different piezoelectric wafer targets 3 may share one first electron beam generator 1, and further, the piezoelectric wafers may also share one ion generator 2.
It is to be understood that the words "first," "second," and the like, as used herein, are words of description only and are not to be interpreted as indicating or implying any relative importance.
In this example, the first electron beam generator 1 is located between the ion generator 2 and the piezoelectric wafer target 3, the outgoing direction of the first electron beam generated by the first electron beam generator 1 forms a first preset angle with the piezoelectric wafer to be implanted, and the outgoing direction of the ion beam generated by the ion generator 2 forms a second preset angle with the piezoelectric wafer to be implanted.
In this example, the first preset angle α may be 90 °, or close to 90 °, i.e. the first electron beam is perpendicular or approximately perpendicular to the piezoelectric wafer, so that the first electron beam can strike the wafer directly.
In this example, the second preset angle β may be specifically set according to the ion implantation requirement. For example, the material of the piezoelectric wafer, the type of the implanted ions, the beam current of the ion beam, and the like can be specifically set
In this example, the first electron beam generator generates electron beams and simultaneously releases positive ions, which can be released in the surrounding environment and can be absorbed by other devices, for example, the first electron beam generator 1 is provided with a positive ion absorber, and the positive ions can be absorbed by the positive ion absorber.
In this example, the first electron beam generator 1 comprises an electron shower, an ultraviolet generator, an X-ray generator, etc.
Wherein the electronic shower can generate electrons through arc excitation; the ultraviolet generator may generate electrons by generating ultraviolet rays that further ionize the air diluted in the ion implantation chamber; the X-ray generator may generate electrons by generating X-rays that further ionize lean air within the ion implantation chamber.
It will be appreciated that other electron beam generators may be used in this example, and are not listed here.
In this example, the exit opening of the first electron beam generator 1 may be rotated, i.e. the exit direction of the electron beam generated by the first electron beam generator 1 may be changed by adjusting the direction of the exit opening.
The ion implantation method provided in the present application will be described below by taking the electron doping implanter shown in fig. 1 as an example.
Fig. 2 shows a flowchart of the ion implantation method provided in the present application, and as shown in fig. 2, the method includes the following steps S101 to S103:
and step S101, mounting a piezoelectric wafer to be injected on the piezoelectric wafer target 3.
In this example, the piezoelectric wafers to be injected may be one or more, and if the piezoelectric wafers are more than one, the piezoelectric wafers may be respectively mounted on different piezoelectric wafer targets, and each piezoelectric wafer is mounted on one piezoelectric wafer target.
And step S102, performing ion implantation on the piezoelectric wafer by using the ion beam generated by the ion generator 2 to obtain an implantation sheet.
In this example, the parameters of ion implantation may be specifically set according to the implantation requirements, for example, according to the implantation dose, the material of the piezoelectric wafer, the film thickness, and the like.
In particular, in this example, the beam current of the ion implantation may be less than 100 μA, e.g., 20 μA to 80 μA, preferably 40 μA to 60 μA, so that the piezoelectric wafer remains structurally intact during implantation without being broken by the ion beam or due to excessive temperatures.
Step S103, performing electron bombardment on the injection sheet by using the first electron beam generated by the first electron beam generator 1.
In this example, for an electron doping implanter with only one piezoelectric wafer target, after ion implantation is completed, the implant wafer is placed in the implantation chamber or transferred to the cooling chamber for cooling; for an electron doping implanter with multiple piezoelectric wafer targets, the implant wafer may be placed in the implantation chamber with the non-implanted piezoelectric wafer opposite the ionizer 2 by moving the piezoelectric wafer targets such that the implant wafer is moved to other positions.
The pyroelectric effect of the piezoelectric material is exposed in the cooling process, so that the refractive index of the surface of the injection sheet is changed regularly, and the injection sheet macroscopically shows a ring-shaped mountain-shaped pattern.
The applicant found that in the process of cooling the injection sheet, electron bombardment is continuously performed on the surface of the injection sheet, so that electron clouds are enriched on the surface of the injection sheet, the electron clouds can offset positive charges released by a pyroelectric effect, heat generated by interaction of the electron clouds and the positive charges or released electric energy can not damage a piezoelectric wafer, and therefore, the formation of annular mountain patterns is inhibited, namely, the change of refractive index of the surface of the injection sheet is inhibited, and then the high-quality injection sheet is obtained.
In this example, the beam current of the electron beam generated by the first electron beam generator 1 may be greater than 0.4A, so that the surface of the piezoelectric wafer gathers sufficient electrons to suppress the formation of the annular mountain pattern.
Fig. 3 shows a schematic structural diagram of another electron doping implanter, in another example, as shown in fig. 3, the first electron beam generator 1 is disposed on a non-working surface of the piezoelectric wafer target 3, that is, an emission direction of the first electron beam generated by the first electron beam generator 1 is approximately opposite to an emission direction of the ion beam generated by the ion generator 2.
In this step, if the electron doping implanter shown in fig. 3 is used, the first electron beam generated by the first electron beam generator is emitted to the injection sheet from the non-working surface of the piezoelectric wafer target 3, and passes over the edge of the injection sheet along the outer edge of the injection sheet, so that an electron cloud is enriched on the injection surface of the injection sheet, and the electron cloud can also counteract the positive charges released by the injection sheet in the cooling process of the injection sheet.
In another aspect of this embodiment, in step S102, during the ion implantation process performed on the piezoelectric wafer, the second electron beam may be used to continuously perform electron bombardment on the piezoelectric wafer.
In one implementation of this example, the second electron beam may be generated by the first electron beam generator 1. For example, when the electron doping implanter shown in fig. 1 or fig. 3 is used for ion implantation, the first electron beam generator 1 can be kept continuously running during the ion implantation process to generate the second electron beam, or even, before the ion emission source is started, the first electron beam generator can be started to generate the second electron beam, and an electron cloud is formed on the surface of the piezoelectric wafer, and then the ion emission source is started.
In this example, the beam current of the second electron beam may be equal to or greater than the beam current of the first electron beam.
In this example, the flow velocity of each electron in the second electron beam may be substantially the same as the flow velocity of each ion in the ion beam, further, the flow direction of each electron in the second electron beam may be substantially the same as the flow direction of each ion in the ion beam, so as to avoid that the electrons in the second electron beam collide with the ions in the ion beam during the flow process and combine, resulting in electrical cancellation.
The applicant has surprisingly found that, during ion implantation of a piezoelectric wafer, the second electron beam is used to continuously bombard the piezoelectric wafer, so that the problem of fracture of the piezoelectric wafer can be significantly reduced, especially in a scheme of ion implantation using a large beam, for example, in a scheme of 1mA or even 3mA of implantation beam, the fracture rate of the piezoelectric wafer/implantation piece is significantly reduced, and the applicant has found through research and analysis that electrons introduced into the surface of the piezoelectric wafer can absorb positive ions remained and accumulated on the implantation surface of the piezoelectric wafer during ion implantation, so that phenomena such as spark discharge which may cause fracture of the piezoelectric wafer are avoided, thereby reducing the fracture rate of the piezoelectric wafer/implantation piece.
In another possible implementation of the present example, the second electron beam may be generated by a second electron beam generator 4, the second electron beam generator 4 being an electron beam generator arranged in an electron doping implanter, different from the first electron beam generator 1, i.e. the electron doping implanter further comprises a second electron beam generator 4.
In this example, the second electron beam generator 4 may be the same as the first electron beam generator 1, or may be different from the first electron beam generator 1, and may be specifically set according to the internal structure of the electron doping implanter, the required electron beam current, and other factors.
In particular, the present solution is particularly suitable for the case of ion implantation by an electron doping implanter having a plurality of piezoelectric wafer targets according to the solution provided in the present application, and specifically, the first electron beam generator 1 and the second electron beam generator 4 may operate simultaneously and act on different piezoelectric wafers/implants respectively, for example, the first electron beam generator 1 acts on the implants individually, and the second electron beam generator 4 acts on the implants in cooperation with the ion generator 2 to produce the implants together with the piezoelectric wafers, so that the implants are directly cooled in the implantation chamber after the production is completed and are directly bombarded by electrons during the cooling process, thereby achieving near continuous production and improving the production efficiency of the implants.
It will be appreciated that the present example is not limited to the electron beam generator cooperating with the ion generator 2 being the second electron beam generator, but is described by way of example only.
Further, the first electron beam generator 1 and the second electron beam generator 4 may perform electron bombardment on the same piezoelectric wafer/implant, for example, during ion implantation, the second electron beam generator generates a second electron beam, the second electron beam cooperates with the ion beam to perform ion implantation on the piezoelectric wafer, after the implantation is completed, the second electron beam generator is stopped, the first electron beam generator 1 is started, and the first electron beam generated by the first electron beam generator 1 is used to perform electron bombardment on the obtained implant, thereby suppressing the formation of a ring-shaped mountain pattern.
Further, the number and positions of the second electron beam generators may be one or more, and may be specifically set according to the injection duration of the piezoelectric wafer, the cooling duration of the injection sheet, and the like. For example, the injection duration of the piezoelectric wafer is about a hours, and the cooling duration of the injection wafer is about b hours, where b > a, two second electron beam generators may be provided to maximize the preparation efficiency of the injection wafer.
The second electron beam generator 4 is taken as one example, and the first electron beam generator 1 and the second electron beam generator 4 may act on different piezoelectric wafers/implants at the same time.
Fig. 4a shows a schematic structural diagram of an electron doping implanter, as shown in fig. 4a, wherein the second electron beam generator 4 and the first electron beam generator 1 are disposed on the same side of the piezoelectric wafer target 3, and the emitting direction of the electron beam generated by the second electron beam generator 4 and the piezoelectric wafer to be implanted form a third preset angle γ.
In this example, the third preset angle may be 90 ° or close to 90 °, that is, the outgoing direction of the electron beam generated by the second electron beam generator 4 is close to perpendicular to the piezoelectric wafer to be injected, and the electrons may bombard the wafer surface directly.
Fig. 4b shows a schematic structural diagram of an electron doping implanter, as shown in fig. 4b, wherein the second electron beam generator 4 and the first electron beam generator 1 are disposed at opposite sides of the piezoelectric wafer target 3, and an emission direction of an electron beam generated by the second electron beam generator 4 and a piezoelectric wafer to be implanted form a fourth preset angle θ.
In this example, the fourth preset angle may be 90 ° or close to 90 °, that is, the outgoing direction of the electron beam generated by the second electron beam generator 4 is close to perpendicular to the piezoelectric wafer to be injected, and the electrons may bombard the wafer surface directly.
Specifically, in one implementation manner, the first electron beam generator 1 arranged between the ion generator 2 and the piezoelectric wafer target 3 can be used together with an ion emission source, ion implantation is performed on the piezoelectric wafer, and then electron bombardment is performed on the cooled implantation piece by using the second electron beam generator 4 arranged on the non-working surface of the piezoelectric wafer target 3; the second electron beam generator 4 arranged on the non-working surface of the piezoelectric wafer target 3 can be matched with an ion emission source for ion implantation on the piezoelectric wafer, and the first electron beam generator 1 arranged between the ion generator 2 and the piezoelectric wafer target 3 is used for electron bombardment on the cooled implantation piece, so that the installation and the use of each device are preferable.
Further, after the ion implantation is completed, electron bombardment is performed on the obtained implant sheet by adopting the scheme of step S103, thereby suppressing the formation of the annular mountain pattern.
Examples and comparative examples
Examples 1 to 6, comparative example 1
In examples 1 to 6 and comparative example 1, the piezoelectric wafer was a 4-inch lithium niobate wafer, the ion implantation beam current was 50. Mu.A, and the ion implantation dose was 2.5X10 15 ions/cm 2 Electron bombardment was not performed during ion implantation, and the remaining parameters and experimental results are shown in table 1 below:
TABLE 1
As can be seen from table 1 above, the electron shower, the ultraviolet lamp and the X-ray can significantly eliminate the annular ridge on the surface of the injection sheet, which is manifested as a significant improvement in the refractive index uniformity on the surface of the injection sheet.
Examples 7 to 18
In implementationIn examples 7 to 18, the piezoelectric wafer was a 4-inch lithium niobate wafer, the ion implantation beam current was 2mA, and the ion implantation dose was 3.5X10 15 ions/cm 2 During ion implantation, a second electron beam generator is used for carrying out electron bombardment on the piezoelectric wafer, and after the implantation is completed, a first electron beam generator is used for carrying out electron bombardment on the implantation piece;
in comparative examples 2 to 7, the piezoelectric wafer was selected to be a 4-inch lithium niobate wafer, the ion implantation beam current was 2mA, and the ion implantation dose was 3.5X10 15 ions/cm 2 ；
Examples 7 to 18 and comparative examples 2 to 7 were each made in 50 pieces, and the remaining parameters and experimental results are shown in table 2 below:
TABLE 2
As can be seen from table 2 above, the use of the electron beam generator to treat the implant can significantly eliminate the annular hills on the surface of the implant, which is manifested by a significant improvement in the uniformity of the refractive index on the surface of the implant; in terms of reducing the fragmentation rate, the wafer fragmentation rate can be remarkably reduced by processing the injection sheet by using the electron beam generator, further, the effect of the electronic shower is better than that of an ultraviolet lamp and X-rays, and the effect of adding 2 electron beam generators is better than that of adding 1 electron beam generator.
The foregoing detailed description has been provided for the purposes of illustration in connection with specific embodiments and exemplary examples, but such description is not to be construed as limiting the application. Those skilled in the art will appreciate that various equivalent substitutions, modifications and improvements may be made to the technical solution of the present application and its embodiments without departing from the spirit and scope of the present application, and these all fall within the scope of the present application. The scope of the application is defined by the appended claims.
Claims (8)
1. A method of ion implantation, the method being implemented with an electron doping implanter comprising a first electron beam generator (1), an ion generator (2) and a piezoelectric wafer target (3), the method comprising:
mounting a piezoelectric wafer to be injected on the piezoelectric wafer target (3);
ion implantation is carried out on the piezoelectric wafer by utilizing the ion beam generated by the ion generator (2) to obtain an implantation sheet;
and carrying out electron bombardment on the injection sheet by utilizing a first electron beam generated by the first electron beam generator (1) so as to neutralize positive charges generated by the injection sheet in the cooling process.
2. Method according to claim 1, characterized in that the first electron beam generator (1) comprises an electron shower, an ultraviolet generator, an X-ray generator or the like.
3. The method according to claim 1 or 2, wherein the beam current of the first electron beam is greater than 0.4A.
4. A method according to any one of claims 1 to 3, wherein the beam current of the ion beam is less than 100 μΑ.
5. The method of any one of claims 1 to 4, wherein electron bombardment of the piezoelectric wafer with a second electron beam is continued during ion implantation of the piezoelectric wafer.
6. The method according to claim 5, characterized in that the second electron beam is generated by a first electron beam generator (1) or by a second electron beam generator (4), the second electron beam generator (4) being an electron beam generator arranged in the electron doping implanter, different from the first electron beam generator (1).
7. The method of claim 5 or 6, wherein the beam current of the ion beam is greater than or equal to 100 μΑ.
8. The method of any one of claims 5 to 7, wherein the flow rate of each electron in the second electron beam is substantially the same as the flow rate of each ion in the ion beam and the flow direction is substantially the same.
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| EP0424925A2 (en) * | 1989-10-25 | 1991-05-02 | Kabushiki Kaisha Toshiba | Method of removing electric charge accumulated on a semiconductor substrate in ion implantation |
| US5136171A (en) * | 1990-03-02 | 1992-08-04 | Varian Associates, Inc. | Charge neutralization apparatus for ion implantation system |
| US5864143A (en) * | 1996-02-01 | 1999-01-26 | Kti Semiconductor Ltd. | High current ion implanter and method of ion implant by the implanter |
| US6362490B1 (en) * | 1998-03-13 | 2002-03-26 | Hitachi, Ltd. | Ion implanter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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