CN111748802B - 一种平板式pecvd设备微波离子源工艺气体喷气装置 - Google Patents
一种平板式pecvd设备微波离子源工艺气体喷气装置 Download PDFInfo
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- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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Abstract
本发明公开了一种平板式PECVD设备微波离子源工艺气体喷气装置，包括多个沿Y轴方向布置的离子源，离子源中包含多根送气管，送气管上沿X轴方向设有多个喷气孔，所有输送相同工艺气体的喷气孔的X轴坐标各不相同且叠加后成等间距布置。本发明的喷气装置由于同样长度上喷气孔的数量增加很多，也就使两个喷气点之间的间距很小，相当于在同样长度的喷气管上成倍的增加了喷气孔的数量，而且是等距分布，类似于整根送气管的喷气是一条线性状态，所以气体是非常均匀的。
Description
技术领域
本发明涉及平板式PECVD设备，尤其涉及一种平板式PECVD设备微波离子源工艺气体喷气装置。
背景技术
PECVD(Plasma Enhanced Chemical Vapor Deposition)是指等离子体增强化学气相沉积法，利用微波或射频等使含有薄膜成分原子的气体(例如硅烷和氨气)电离，在局部形成等离子体，而等离子体化学活性很强，可使化学反应在较低的温度下进行，在基片上沉积出所期望的薄膜(例如氧化铝和氮化硅薄膜)。平板式PECVD设备是采用多组微波源组合，由于单个微波源生长的薄膜厚度基本固定，利用多微波源组合来增加膜厚的要求，而微波源内工艺气体的均匀性是影响镀膜均匀性的关键因素。
申请人已知的一种微波源工艺气体喷气装置如附图1所示，包括多组沿Y轴方向布置的微波离子源，每组离子源上有多根沿Y轴方向(也即石墨框的行进方向)布置的送气管，每根送气管上设置线性排列的喷气孔，喷气孔沿X轴方向(也即石墨框的宽度方向)均匀布置，每个微波离子源内相邻两排喷气孔错开布置(也即各孔中心的X轴坐标不同)，但由于使用了多个完全相同的微波源，每个离子源内同一功能的送气管上的喷气孔设置方式相同。这种喷气装置虽然保证了各排喷气孔沿X轴方向的均匀性，但由于孔间距的影响，两孔之间的气流密度会偏小，而且当承载硅片的石墨框沿着Y轴方向运动时，气流密度高的地方始终在硅片的同一X轴坐标处，气流密度低的地方也是始终在同一X坐标处，即硅片通过所有微波源时，接收气流密度高的地方始终是高的，接收气流密度低的地方始终是低的。这就会导致薄膜生长的不均匀性。
发明内容
本发明要解决的技术问题是克服现有技术的不足，提供一种结构简单、气氛均匀性好的平板式PECVD设备微波离子源工艺气体喷气装置。
为解决上述技术问题，本发明采用以下技术方案：
一种平板式PECVD设备微波离子源工艺气体喷气装置，包括多个沿Y轴方向布置的离子源，所述离子源中包含多根送气管，所述送气管上沿X轴方向设有多个喷气孔，所有离子源中输送相同工艺气体的喷气孔的X轴坐标各不相同且叠加后成等间距布置。
作为上述技术方案的进一步改进：各所述喷气孔均为圆孔。
作为上述技术方案的进一步改进：所述离子源中包括一根第一送气管和两根第二送气管，第一送气管和第二送气管输送的工艺气体不同，两根第二送气管输送的工艺气体相同且分设于第一送气管的两侧。
与现有技术相比，本发明的优点在于：本发明公开的平板式PECVD设备微波离子源工艺气体喷气装置，对所有离子源中相同功能的送气管上的喷气孔进行统筹安排，各相同功能的送气管叠加后，所有喷气孔在X方向坐标不一致且为等间距布置。由于同样长度上喷气孔的数量增加很多，也就是两个喷气点之间的间距很小，相当于在同样长度的喷气管上成倍的增加了喷气孔的数量，而且是等距分布，类似于整根送气管的喷气是一条线性状态，所以气体是非常均匀的，有利于保证微波源区域内等离子体的均匀性，工艺过程中石墨框装载硅片沿着Y轴方向经过所有的送气管后，可保证硅片的镀膜均匀性。
附图说明
图1是申请人已知的平板式PECVD设备微波离子源工艺气体喷气装置的结构示意图。
图2是本发明平板式PECVD设备微波离子源工艺气体喷气装置的结构示意图。
图中各标号表示：1、送气管；11、第一送气管；12、第二送气管；2、喷气孔；3、离子源。
具体实施方式
以下结合说明书附图和具体实施例对本发明作进一步详细说明。
如图2所示，本实施例的平板式PECVD设备微波离子源工艺气体喷气装置，包括多个个沿Y轴方向布置的离子源3，离子源3中包含多根送气管1，送气管1上沿X轴方向设有多个喷气孔2，若n个离子源3中相同功能的送气管1分别为A1...An且n≥2，A1上的各喷气孔2中心的X轴坐标为A11、A12...A1m且m≥2，A2上的各喷气孔2中心的X轴坐标为A21、A22...A2m，An上的各喷气孔2中心的X轴坐标为An1、An2...Anm，则所有离子源3中输送相同工艺气体的喷气孔2叠加后的X轴坐标A11、A12...A1m、A21、A22...A2m、An1、An2...Anm各不相同且成等间距布置。其中需要说明的是，A11、A12...A1m、A21、A22...A2m、An1、An2...Anm的大小关系并不限定，只要保证所有喷气孔2叠加后沿X轴方向均匀布置即可。
该平板式PECVD设备微波离子源工艺气体喷气装置，对所有离子源3中相同功能的送气管1上的喷气孔2进行统筹安排，各相同功能的送气管1叠加后，所有喷气孔2在X方向坐标不一致且为等间距布置，即每个离子源3上同功能送气管上各喷气孔2的X方向坐标不一致，但叠加后整个X方向长度上的喷气孔2是均匀的。由于同样长度上喷气孔2的数量增加很多，也就是两个喷气点之间的间距很小，相当于在同样长度的喷气管1上成倍的增加了喷气孔2的数量，而且是等距分布，类似于整根送气管1的喷气是一条线性状态，所以气体是非常均匀的，有利于保证微波源区域内等离子体的均匀性，工艺过程中石墨框装载硅片沿着Y轴方向经过所有的送气管1后，可保证硅片的镀膜均匀性。
作为优选的技术方案，本实施例中，各喷气孔2均为圆孔。该种送气管1方便加工，降低制造难度和成本，只需要调整喷气孔2之间错开的间距即可实现叠加后各喷气孔2在X轴上是均匀分布的。当然在其他实施例中，喷气孔2的形状也可采用矩形、方形、椭圆形等其他非圆形，也可实现组合后X轴是均匀分布的。
作为优选的技术方案，离子源3中包括一根第一送气管11和两根第二送气管12，第一送气管11和第二送气管12输送的工艺气体不同，两根第二送气管12输送的工艺气体相同且分设于第一送气管11的两侧。
虽然本发明已以较佳实施例揭露如上，然而并非用以限定本发明。任何熟悉本领域的技术人员，在不脱离本发明技术方案范围的情况下，都可利用上述揭示的技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明技术实质对以上实施例所做的任何简单修改、等同变化及修饰，均应落在本发明技术方案保护的范围内。
Claims (1)
1.一种平板式PECVD设备微波离子源工艺气体喷气装置，包括多个沿Y轴方向布置的离子源（3），所述离子源（3）中包含多根送气管（1），所述送气管（1）上沿X轴方向设有多个喷气孔（2），其特征在于：所有离子源（3）中输送相同工艺气体的喷气孔（2）的X轴坐标各不相同且叠加后成等间距布置；所述离子源（3）中包括一根第一送气管（11）和两根第二送气管（12），第一送气管（11）和第二送气管（12）输送的工艺气体不同，两根第二送气管（12）输送的工艺气体相同且分设于第一送气管（11）的两侧；所述喷气孔（2）的形状为矩形、方形或椭圆形。
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| CN101155463A (zh) * | 2006-09-29 | 2008-04-02 | 东京毅力科创株式会社 | 微波等离子体处理装置、电介质窗制造方法和微波等离子体处理方法 |
| CN103370765A (zh) * | 2010-12-23 | 2013-10-23 | 六号元素有限公司 | 控制合成金刚石材料的掺杂 |
| CN210012901U (zh) * | 2019-03-29 | 2020-02-04 | 中国电子科技集团公司第四十八研究所 | 一种平板式pecvd设备微波离子源工艺气体喷气装置 |
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| CN101155463A (zh) * | 2006-09-29 | 2008-04-02 | 东京毅力科创株式会社 | 微波等离子体处理装置、电介质窗制造方法和微波等离子体处理方法 |
| CN103370765A (zh) * | 2010-12-23 | 2013-10-23 | 六号元素有限公司 | 控制合成金刚石材料的掺杂 |
| CN210012901U (zh) * | 2019-03-29 | 2020-02-04 | 中国电子科技集团公司第四十八研究所 | 一种平板式pecvd设备微波离子源工艺气体喷气装置 |
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