CN111739983A - Apparatus and preparation method for preparing silicon dioxide and polysilicon thin films on the surface of silicon wafers - Google Patents

Abstract

The device for preparing the silicon dioxide and the polycrystalline silicon film on the surface of the silicon wafer comprises an inlet pre-pumping chamber, an inlet transition chamber, at least one oxidation chamber, at least one process chamber, a tempering chamber, a cooling chamber, an outlet buffer chamber and an outlet chamber which are sequentially connected in series from front to back, wherein vacuum isolation gate valves are arranged at the joint between any two adjacent chambers, the inlet pre-pumping chamber and the outlet chamber are respectively provided with a flap valve, the inlet pre-pumping chamber and the outlet chamber are connected with vacuum pumps, the inlet transition chamber, the oxidation chamber, the process chamber, the tempering chamber, the cooling chamber and the outlet buffer chamber are respectively connected with a turbo molecular pump, the oxidation chamber is connected with a low-energy oxygen ion source, a silicon target and a gaseous doping source are arranged in the work chamber, the front part in the tempering chamber is provided with an infrared heating source, and the rear. When the device is used, the silicon wafer is placed on the graphite tray and sequentially reacts in each chamber, and the device is simple in structure, low in manufacturing cost and low in cost in the using process.

Description

Apparatus and preparation method for preparing silicon dioxide and polysilicon thin films on the surface of silicon wafers

technical field

The invention relates to a device and a preparation method for preparing silicon dioxide and polysilicon thin films on the surface of a silicon wafer.

Background technique

At present, grid parity requires the development of the photovoltaic industry to focus on higher photoelectric conversion efficiency. Existing high-efficiency crystalline silicon solar cell technology routes: P-PERC (Passivated Emitter and Rear Cell, passivated emitter back field point contact), N-PERT (Passivated Emitter Rear Totally-diffused cell, passivated emitter back surface full diffusion) ), HJT (Heterojunction, heterojunction), IBC (Inter-digitated back-contact, interdigitated back-contact), MWT (Metal Wrap Through, metal through-hole winding); TOPCon (Tunnel Oxide PassivatedContact, tunnel oxide passivation chemical contact).

The P-PERC cell limits the contact range of the backside to the opening area, which increases the complexity of the process. The high recombination rate at the opening still exists, and the problem of light-induced attenuation LID is not completely solved.

N-PERT is characterized by full coverage of the back surface diffusion to reduce and reduce the back contact resistance and recombination rate of the battery, but no tunnel oxide passivation layer.

Due to cost and yield problems, HJT and IBC technologies have not been invested on a large scale in the industry.

The solar cell manufactured according to the quantum tunneling effect is called TunnelOxide Passivated Contact, or TOPCon for short. TOPCon technology is to prepare an ultra-thin tunneling _SiO2 oxide layer and a highly doped polysilicon film layer on the back of the cell, which together form a passivation contact structure, which provides a good surface for the back of the silicon wafer. Surface passivation. Since the SiO2 oxide layer is very thin and the silicon thin layer is doped, the majority (electrons) can tunnel through the two passivation layers, while the minority (holes) are blocked. If you deposit metal on it, you can Passivated contacts are obtained without the need for openings. TOPCon technology, which can achieve full-surface passivation on the back without opening contact, is a technology that further reduces the recombination rate of the metal contact area on the back to realize the overall passivation contact on the back.

However, in the prior art, the technology for preparing a dense SiO ₂ film layer and a layer of highly doped polysilicon film layer on the surface of the silicon wafer is immature, and the cost is high, which affects the development of the industry.

SUMMARY OF THE INVENTION

The first technical problem to be solved by the present invention is to provide a device for preparing silicon dioxide and polysilicon thin films on the surface of a silicon wafer. The device has a simple structure, no diffraction and low cost.

The second technical problem to be solved by the present invention is to provide a preparation method for preparing silicon dioxide and polysilicon thin films on the surface of silicon wafers, which can prepare uniform and dense SiO ₂ thin films and doped polysilicon thin films with adjustable doping concentration, and The preparation process is energy-saving, the target material is cheap, and the cost is low.

In order to solve the above-mentioned first technical problem, the present invention provides a device for preparing silicon dioxide and polysilicon films on the surface of a silicon wafer, including an inlet pre-extraction chamber, an inlet transition chamber, at least one oxidation chamber, at least one The process chamber, tempering chamber, cooling chamber, outlet buffer chamber, outlet chamber, and any connection between two adjacent chambers are provided with vacuum isolation plug-in valves, and the front side of the inlet pre-extraction chamber is provided with The first flap valve, the second flap valve is arranged on the rear side of the outlet chamber, the inlet pre-extraction chamber and the outlet chamber are connected with a vacuum pump, the inlet transition chamber, oxidation chamber, process chamber, tempering chamber are A turbomolecular pump is connected to the chamber, the cooling chamber and the outlet buffer chamber. The oxidation chamber is connected to a low-energy oxygen ion source. At least one silicon target and at least one gaseous in-situ doping source are arranged in the working chamber. The front part is equipped with an infrared heating source, and the rear part is equipped with an ultraviolet laser tempering system with a wavelength of 200-300nm.

Preferably, the shape of the silicon target is a flat target, a cylindrical target, a cylindrical target, or a dogbone-shaped target that is large at both ends and small in the middle.

Preferably, the gaseous doping source is a phosphorus doping source or a boron doping source.

For the sake of simple description, the following devices for preparing silicon dioxide and polysilicon thin films on the surface of silicon wafers described in the present invention are referred to as the device for short.

Advantages of the device: the device has a simple structure, no diffraction, is suitable for compatible sizes, and has a low cost.

In order to solve the above-mentioned second technical problem, the present invention provides a preparation method for preparing silicon dioxide and polysilicon films on the surface of a silicon wafer, comprising the following steps:

(1) Arrange the silicon wafers on the graphite tray in a determinant manner;

(2) Open the first flap valve, the graphite tray carrying the silicon wafer first enters the inlet pre-extraction chamber, and the air pressure is reduced from normal pressure to 1pa under the action of the vacuum pump;

(3) Open the vacuum isolation plug valve between the inlet pre-extraction chamber and the inlet transition chamber to send the graphite tray loaded with silicon wafers into the inlet transition chamber, and then close the vacuum isolation plug between the inlet pre-extraction chamber and the inlet transition chamber The plate valve, under the action of the turbomolecular pump, reduces the air pressure to 10 ^-2 Pa;

(4) Open the vacuum isolation flapper valve between the inlet transition chamber and the oxidation chamber to send the graphite tray loaded with silicon wafers into the oxidation chamber, and continue to decompress to 10 ^-4 Pa under the action of the turbomolecular pump. At the same time, start the low energy Oxygen ion source, a layer of SiO ₂ film is formed on the silicon wafer with a thickness of 0.5-3nm, the parameters of low-energy oxygen ions are: oxygen ion energy range: 20eV-50eV, low-energy oxygen plasma working pressure 2*10 ^-1 pa- 5*10 ^-2 pa, RF frequency 13.56MHz, oxygen low-energy ion source width 10-100cm, silicon wafer transmission speed 1-10m/s, high-density silicon dioxide film growth rate 10-50nm/s;

(5) Open the vacuum isolation plug-in valve between the oxidation chamber and the process chamber, and send the graphite tray loaded with silicon wafers into the process chamber. The process chamber is kept at 10 ^-4 Pa under the action of the turbomolecular pump, and an inert gas is introduced into the process chamber. As the process gas for sputtering deposition of amorphous silicon films, the pressure of the inert gas ranges from 1pa to ^10-2pa , and the process chamber uses a silicon target and a gaseous doping source for physical vapor deposition. Among them, the magnetron sputtering target surface to the workpiece The distance is 90-150mm, the temperature of the magnetron sputtering process is 100-300℃, and the thickness of the deposition is 50nm-200nm;

(6) Open the vacuum isolation flapper valve between the process chamber and the tempering chamber, and send the graphite tray loaded with silicon wafers into the tempering chamber. The tempering chamber maintains a gas pressure of 10 ^-1 to 10 ^-4 under the action of a turbomolecular pump In the pa range, the silicon wafer is first heated by infrared in the tempering chamber to keep the temperature at 100-300℃, and then heated and tempered by ultraviolet laser to crystallize. The wavelength of the ultraviolet laser is 200-300nm, and the tempering temperature is 850-900℃ ;

(7) Open the vacuum isolation flapper valve between the tempering chamber and the cooling chamber to send the graphite tray loaded with silicon wafers into the cooling chamber, and the cooling chamber maintains the air pressure at 10 ^-1 to 10 ^-4 Pa under the action of the turbomolecular pump range, the silicon wafer is cooled to 300°C in the cooling chamber;

(8) Open the vacuum isolation flapper valve between the cooling chamber and the outlet buffer chamber to send the graphite tray loaded with silicon wafers into the outlet buffer chamber, and the outlet buffer chamber is gradually boosted to 1 to 10 ^-2 under the action of the turbomolecular pump pa range;

(9) Open the vacuum isolation plug-in valve between the outlet buffer chamber and the outlet chamber to send the graphite tray loaded with silicon wafers into the outlet chamber, gradually increase the pressure to normal pressure under the action of the vacuum pump of the outlet chamber, and finally open the second switch The plate valve can be discharged.

For the sake of simple description, the following methods for preparing silicon dioxide and polycrystalline silicon thin films on the surface of silicon wafers described in the present invention are referred to as this method.

The shape of the silicon wafer can be square, rectangle or other polygons. The size of the square ranges from 10mm*10mm to 250mm*250mm. For rectangular silicon wafers or other polygonal silicon wafers, the size range is calculated by the perimeter, and the sum of the perimeters is greater than 40mm. The thickness of the silicon wafer is 110-250μm, and the size of the graphite tray can be selected in the range of 1m*1m to 4m*4m. Each graphite tray can load more than 100 silicon wafers from 10mm*10mm to 210mm*210mm.

The generation of low-energy oxygen ions is to use the high-frequency discharge phenomenon in the rare gas to ionize the gas. It is generally used to generate positive ions in a low-charge state, and sometimes negative ions are also extracted from it, which is used as a negative ion source.

In a high-frequency electric field, free electrons collide with atoms (or molecules) in the gas and ionize them. The collision between the charged particles generates a large amount of plasma to form the plasma. The discharge tube of the high-frequency ion source is generally made of a quartz tube. The high-frequency field can be generated by a solenoid coil outside the tube or by a ring electrode sheathed outside the tube. The former is called inductive coupling and the latter is called capacitive coupling. The plasma excitation source can be a 13.56 MHz radio frequency power source or a 2.4 GHz microwave source, and the output power can be in the range of hundreds to several kilowatts. When a constant magnetic field is applied in the high-frequency discharge region, the ion concentration in the discharge region can be increased due to the resonance phenomenon.

German CCR Company can provide radio frequency inductively coupled plasma source (RF-ICP), and the ion source suitable for the present invention is COPRA LS-Series RF ion source of German CCR Company, LS 1300x201GRPE.

The RF-ICP ion source is mainly composed of a vacuum discharge chamber, an inductive coil (RF antenna), a gas introduction component, a RF power supply and a power matcher. When the RF-ICP is working, the high-frequency magnetic field generated by the coil current generates an induced electric field in the discharge chamber, and the electrons are accelerated by the electric field to complete the plasma excitation process.

When sputtering the silicon wafer on the graphite tray to deposit the in-situ doped amorphous silicon film, it can be deposited from the top of the silicon wafer or from the bottom of the silicon wafer. The silicon wafer on the graphite tray can also be mounted vertically or Installation at a certain angle can achieve the purpose of depositing in-situ doped amorphous silicon films from horizontal, vertical, or at a certain angle.

Advantages of the method: the method can prepare uniform and dense SiO ₂ thin films and doped polysilicon thin films with adjustable doping concentration, and the preparation process is energy-saving, the target material is cheap, pollution-free, and the cost is low.

Description of drawings

FIG. 1 is a schematic structural diagram of Embodiment 1 of the present invention.

FIG. 2 is a structural block diagram of Embodiment 2 of the present invention.

Detailed ways

Example 1:

Referring to Figure 1, the device for preparing silicon dioxide and polysilicon films on the surface of silicon wafers includes an inlet pre-extraction chamber 1, an inlet transition chamber 2, an oxidation chamber 3, a process chamber 4, a tempering chamber 5, a cooling chamber 5 connected in series from front to back Chamber 6, outlet buffer chamber 7, outlet chamber 8, the connection between any two adjacent chambers is provided with a vacuum isolation plug-in valve 31, and the front side of the inlet pre-extraction chamber 1 is provided with a first flap. Plate valve 11, a second flap valve 81 is provided on the rear side of the outlet chamber 8, the inlet pre-pumping chamber 1 and the outlet chamber 8 are connected with a vacuum pump 12, the inlet transition chamber 2, the oxidation chamber 3, The process chamber 4, the tempering chamber 5, the cooling chamber 6, and the outlet buffer chamber 7 are all connected with a turbomolecular pump 21, the oxidation chamber 3 is connected with a low-energy oxygen ion source 32, and two front and rear spaces are arranged in the working chamber The silicon target 41 and the gaseous doping source 42 are provided, the tempering chamber 5 is provided with an infrared heating source 51 at the front and an ultraviolet laser tempering device 52 with a wavelength of 260 nm at the rear.

The shape of the silicon target 41 is a flat target.

The gaseous doping source 42 is composed of phosphine.

Embodiment 2:

Referring to Figure 2, the device for preparing silicon dioxide and polysilicon thin films on the surface of silicon wafers includes an inlet pre-extraction chamber 1, an inlet transition chamber 2, two oxidation chambers 3, two process chambers 4, and tempering in series from front to back. Chamber 5, cooling chamber 6, outlet buffer chamber 7, outlet chamber 8, the connection between any two adjacent chambers is provided with a vacuum isolation flapper valve 31, and the front side of the inlet pre-extraction chamber 1 is provided with a vacuum isolation valve 31. There is a first flap valve 11, a second flap valve 81 is provided on the rear side of the outlet chamber 8, the inlet pre-extraction chamber 1 and the outlet chamber 8 are connected with a vacuum pump 12, the inlet transition chamber 2, The oxidation chamber 3, the process chamber 4, the tempering chamber 5, the cooling chamber 6, and the outlet buffer chamber 7 are all connected with a turbomolecular pump 21, the oxidation chamber 3 is connected with a low-energy oxygen ion source 32, and two are installed in the working chamber. A silicon target 41 and a gaseous doping source 42 are arranged at intervals in the front and rear, and the tempering chamber 5 is provided with an infrared heating source 51 at the front and an ultraviolet laser tempering device 52 with a wavelength of 260 nm at the rear.

The shape of the silicon target 41 is a cylindrical target.

The gaseous doping source 42 is composed of TMP.

Embodiment three:

The preparation method for preparing silicon dioxide and polysilicon films on the surface of silicon wafers includes the following steps:

(1) Arrange the silicon wafers on the graphite tray in a determinant manner;

(2) Open the first flap valve, the graphite tray carrying the silicon wafer first enters the inlet pre-extraction chamber, and the air pressure is reduced from normal pressure to 1pa under the action of the vacuum pump;

(3) Open the vacuum isolation plug valve between the inlet pre-extraction chamber and the inlet transition chamber to send the graphite tray loaded with silicon wafers into the inlet transition chamber, and then close the vacuum isolation plug between the inlet pre-extraction chamber and the inlet transition chamber The plate valve, under the action of the turbomolecular pump, reduces the air pressure to 10 ^-2 Pa;

(4) Open the vacuum isolation flapper valve between the inlet transition chamber and the oxidation chamber to send the graphite tray loaded with silicon wafers into the oxidation chamber, and continue to decompress to 10 ^-4 Pa under the action of the turbomolecular pump. At the same time, start the low energy Oxygen ion source, a layer of SiO ₂ film is formed on the silicon wafer with a thickness of 0.5nm. The low-energy oxygen ion parameters are: oxygen ion body energy range: 20eV, low-energy oxygen plasma working pressure 2*10 ^-1 Pa, RF frequency 13.56 MHz, oxygen low-energy ion source width 10cm, silicon wafer transmission speed 1-10m/s;

(5) Open the vacuum isolation flapper valve between the oxidation chamber and the process chamber, and send the graphite tray loaded with silicon wafers into the process chamber. The process chamber is kept at 10 ^-4 Pa under the action of the turbomolecular pump, and argon gas is introduced into the process chamber. As the process gas for sputtering and depositing amorphous silicon films, the pressure of the inert gas is in the range of 1pa, and the physical vapor deposition is carried out through the silicon target and the gaseous doping source in the process chamber. The distance from the magnetron sputtering target surface to the workpiece is 90mm, and the magnetic The sputtering process temperature is 100°C, and the deposition thickness is 50nm;

(6) Open the vacuum isolation ^flapper valve between the process chamber and the tempering chamber, and send the graphite tray loaded with silicon wafers into the tempering chamber. In the tempering chamber, the temperature is kept at 100 °C by infrared heating, and then it is crystallized by heating and tempering by ultraviolet laser. The wavelength of the ultraviolet laser is 200 nm, and the tempering temperature is 850 °C;

(7) Open the vacuum isolation ^flapper valve between the tempering chamber and the cooling chamber, and send the graphite tray carrying the silicon wafers into the cooling chamber. Cool down to 300℃ in the cooling room;

(8) Open the vacuum isolation plug-in valve between the cooling chamber and the outlet buffer chamber to send the graphite tray loaded with silicon wafers into the outlet buffer chamber, and the outlet buffer chamber is gradually boosted to 1pa under the action of the turbomolecular pump;

(9) Open the vacuum isolation plug-in valve between the outlet buffer chamber and the outlet chamber to send the graphite tray loaded with silicon wafers into the outlet chamber, gradually increase the pressure to normal pressure under the action of the vacuum pump of the outlet chamber, and finally open the second switch The plate valve can be discharged.

Embodiment 4:

The preparation method for preparing silicon dioxide and polysilicon films on the surface of silicon wafers includes the following steps:

(1) Arrange the silicon wafers on the graphite tray in a determinant manner;

(2) Open the first flap valve, the graphite tray carrying the silicon wafer first enters the inlet pre-extraction chamber, and the air pressure is reduced from normal pressure to 1pa under the action of the vacuum pump;

(3) Open the vacuum isolation plug valve between the inlet pre-extraction chamber and the inlet transition chamber to send the graphite tray loaded with silicon wafers into the inlet transition chamber, and then close the vacuum isolation plug between the inlet pre-extraction chamber and the inlet transition chamber The plate valve, under the action of the turbomolecular pump, reduces the air pressure to 10 ^-2 Pa;

(4) Open the vacuum isolation flapper valve between the inlet transition chamber and the oxidation chamber to send the graphite tray loaded with silicon wafers into the oxidation chamber, and continue to decompress to 10 ^-4 Pa under the action of the turbomolecular pump. At the same time, start the low energy Oxygen ion source, a layer of SiO ₂ film is formed on the silicon wafer with a thickness of 2nm. The parameters of low-energy oxygen ions are: oxygen ion body energy range: 35eV, low-energy oxygen plasma working pressure 1*10 ^-1 Pa, RF frequency 13.56MHz , The width of the oxygen low-energy ion source is 55cm, and the transmission speed of the silicon wafer is 5m/s;

(5) Open the vacuum isolation flapper valve between the oxidation chamber and the process chamber, and send the graphite tray loaded with silicon wafers into the process chamber. The process chamber is kept at 10 ^-4 Pa under the action of the turbomolecular pump, and argon gas is introduced into the process chamber. As the process gas for sputtering and depositing amorphous silicon films, the pressure of the inert gas is 0.5pa, and the physical vapor deposition is performed through the silicon target and the gaseous doping source in the process chamber. The distance from the magnetron sputtering target surface to the workpiece is 120mm, and the magnetic The sputtering process temperature is 200°C, and the deposition thickness is 125nm;

(6) Open the vacuum isolation flapper valve between the process chamber and the tempering chamber, and send the graphite tray carrying the silicon wafers into the tempering chamber. In the fire chamber, the temperature is kept at 200 ℃ by infrared heating, and then it is heated and tempered by ultraviolet laser to make it crystallized. The wavelength of the ultraviolet laser is 260 nm, and the tempering temperature is 875 ℃;

(7) Open the vacuum isolation flapper valve between the tempering chamber and the cooling chamber, and send the graphite tray loaded with silicon wafers into the cooling chamber. The cooling chamber maintains the air pressure at 0.05pa under the action of the turbomolecular pump, and the silicon wafers are placed in the cooling chamber. Cool to 300℃;

(8) Open the vacuum isolation flapper valve between the cooling chamber and the outlet buffer chamber to send the graphite tray loaded with silicon wafers into the outlet buffer chamber, and the outlet buffer chamber is gradually boosted to 0.5pa under the action of the turbomolecular pump;

(9) Open the vacuum isolation plug-in valve between the outlet buffer chamber and the outlet chamber to send the graphite tray loaded with silicon wafers into the outlet chamber, gradually increase the pressure to normal pressure under the action of the vacuum pump of the outlet chamber, and finally open the second switch The plate valve can be discharged.

Embodiment 5:

The preparation method for preparing silicon dioxide and polysilicon films on the surface of silicon wafers includes the following steps:

(1) Arrange the silicon wafers on the graphite tray in a determinant manner;

(2) Open the first flap valve, the graphite tray carrying the silicon wafer first enters the inlet pre-extraction chamber, and the air pressure is reduced from normal pressure to 1pa under the action of the vacuum pump;

(3) Open the vacuum isolation plug valve between the inlet pre-extraction chamber and the inlet transition chamber to send the graphite tray loaded with silicon wafers into the inlet transition chamber, and then close the vacuum isolation plug between the inlet pre-extraction chamber and the inlet transition chamber The plate valve, under the action of the turbomolecular pump, reduces the air pressure to 10 ^-2 Pa;

(4) Open the vacuum isolation flapper valve between the inlet transition chamber and the oxidation chamber to send the graphite tray loaded with silicon wafers into the oxidation chamber, and continue to decompress to 10 ^-4 Pa under the action of the turbomolecular pump. At the same time, start the low energy Oxygen ion source, a layer of SiO ₂ film is formed on the silicon wafer, the thickness is 3nm, the parameters of low-energy oxygen ions are: oxygen ion body energy range: 50eV, low-energy oxygen plasma working pressure 5*10 ^-2 Pa, RF frequency 13.56MHz , The width of the oxygen low-energy ion source is 100cm, and the transmission speed of the silicon wafer is 10m/s;

(5) Open the vacuum isolation flapper valve between the oxidation chamber and the process chamber, and send the graphite tray loaded with silicon wafers into the process chamber. The process chamber is kept at 10 ^-4 Pa under the action of the turbomolecular pump, and argon gas is introduced into the process chamber. As the process gas for sputtering and depositing amorphous silicon films, the pressure of the inert gas is 10 ^-2 Pa. In the process chamber, the silicon target and the gaseous doping source are used for physical vapor deposition. The distance from the magnetron sputtering target surface to the workpiece is 150mm. , the magnetron sputtering process temperature is 300 ℃, and the deposition thickness is 200 nm;

(6) Open the vacuum isolation ^flapper valve between the process chamber and the tempering chamber, and send the graphite tray loaded with silicon wafers into the tempering chamber. In the tempering chamber, the temperature is kept at 300℃ by infrared heating, and then it is crystallized by heating and tempering by ultraviolet laser. The wavelength of the ultraviolet laser is 300nm, and the tempering temperature is 900℃;

(7) Open the vacuum isolation ^flapper valve between the tempering chamber and the cooling chamber, and send the graphite tray carrying the silicon wafers into the cooling chamber. Cool down to 300℃ in the cooling room;

(8) Open the vacuum isolation flapper valve between the cooling chamber and the outlet buffer chamber to send the graphite tray loaded with silicon wafers into the outlet buffer chamber, and the outlet buffer chamber is gradually boosted to 10 ^-2 Pa under the action of the turbomolecular pump;

(9) Open the vacuum isolation plug-in valve between the outlet buffer chamber and the outlet chamber to send the graphite tray loaded with silicon wafers into the outlet chamber, gradually increase the pressure to normal pressure under the action of the vacuum pump of the outlet chamber, and finally open the second switch The plate valve can be discharged.

Claims (4)

1. The device for preparing silicon dioxide and polysilicon film on the surface of silicon wafer, it is characterized in that: comprising the inlet pre-pumping chamber, inlet transition chamber, at least one oxidation chamber, at least one process chamber, tempering chamber, The cooling chamber, the outlet buffer chamber, the outlet chamber, and the connection between any two adjacent chambers are provided with a vacuum isolation flapper valve, and the front side of the inlet pre-extraction chamber is provided with a first flap valve, and the outlet The rear side of the chamber is provided with a second flap valve, the inlet pre-pumping chamber and the outlet chamber are connected with a vacuum pump, the inlet transition chamber, oxidation chamber, process chamber, tempering chamber, cooling chamber, outlet buffer A turbo molecular pump is connected to the chamber, a low-energy oxygen ion source is connected to the oxidation chamber, at least one silicon target and at least one gaseous in-situ doping source are installed in the working chamber, and infrared heating is installed in the front of the tempering chamber. The source and the rear are equipped with an ultraviolet laser tempering system with a wavelength of 200-300nm. 2 . The device for preparing silicon dioxide and polysilicon films on the surface of a silicon wafer according to claim 1 , wherein the shape of the silicon target is a flat target, a cylindrical target, a cylindrical target, or two ends that are large in the middle and small in the middle. 3 . dogbone target. 3 . The device for preparing silicon dioxide and polysilicon films on the surface of a silicon wafer according to claim 1 , wherein the gaseous doping source is a phosphorus doping source or a boron doping source. 4 . 4. the preparation method for preparing silicon dioxide and polycrystalline silicon thin film using the device for preparing silicon dioxide and polycrystalline silicon thin film on the surface of silicon wafer described in any one of claims 1-3, is characterized in that, comprises the following steps: (1) Arrange the silicon wafers on the graphite tray in a determinant manner; (2) Open the first flap valve, the graphite tray carrying the silicon wafer first enters the inlet pre-extraction chamber, and the air pressure is reduced from normal pressure to 1pa under the action of the vacuum pump; (3) Open the vacuum isolation plug valve between the inlet pre-extraction chamber and the inlet transition chamber to send the graphite tray loaded with silicon wafers into the inlet transition chamber, and then close the vacuum isolation plug between the inlet pre-extraction chamber and the inlet transition chamber The plate valve, under the action of the turbomolecular pump, reduces the air pressure to 10 ^-2 Pa; (4) Open the vacuum isolation flapper valve between the inlet transition chamber and the oxidation chamber to send the graphite tray loaded with silicon wafers into the oxidation chamber, and continue to decompress to 10 ^-4 Pa under the action of the turbomolecular pump. At the same time, start the low energy Oxygen ion source, a layer of SiO ₂ film is formed on the silicon wafer with a thickness of 0.5-3nm. The parameters of low-energy oxygen ions are: oxygen ion energy range: 20eV-50eV, low-energy oxygen plasma working pressure 2*10 ^-1 pa- 5*10 ^-2 pa, RF frequency 13.56MHz, oxygen low-energy ion source width 10-100cm, silicon wafer transmission speed 1-10m/s, high-density silicon dioxide film growth rate 10-50nm/s; (5) Open the vacuum isolation plug-in valve between the oxidation chamber and the process chamber, and send the graphite tray loaded with silicon wafers into the process chamber. The process chamber is kept at 10 ^-4 Pa under the action of the turbomolecular pump, and an inert gas is introduced into the process chamber. As the process gas for sputtering deposition of amorphous silicon films, the pressure of the inert gas ranges from 1pa to ^10-2pa , and the process chamber uses a silicon target and a gaseous doping source for physical vapor deposition. Among them, the magnetron sputtering target surface to the workpiece The distance is 90-150mm, the temperature of the magnetron sputtering process is 100-300℃, and the thickness of the deposition is 50nm-200nm; (6) Open the vacuum isolation flapper valve between the process chamber and the tempering chamber, and send the graphite tray loaded with silicon wafers into the tempering chamber. The tempering chamber maintains a gas pressure of 10 ^-1 to 10 ^-4 under the action of a turbomolecular pump In the pa range, the silicon wafer is first heated by infrared in the tempering chamber to keep the temperature at 100-300℃, and then heated and tempered by ultraviolet laser to crystallize. The wavelength of the ultraviolet laser is 200-300nm, and the tempering temperature is 850-900℃ ; (7) Open the vacuum isolation flapper valve between the tempering chamber and the cooling chamber to send the graphite tray loaded with silicon wafers into the cooling chamber, and the cooling chamber maintains the air pressure at 10 ^-1 to 10 ^-4 Pa under the action of the turbomolecular pump range, the silicon wafer is cooled to 300°C in the cooling chamber; (8) Open the vacuum isolation flapper valve between the cooling chamber and the outlet buffer chamber to send the graphite tray loaded with silicon wafers into the outlet buffer chamber, and the outlet buffer chamber is gradually boosted to 1 to 10 ^-2 under the action of the turbomolecular pump pa range; (9) Open the vacuum isolation plug-in valve between the outlet buffer chamber and the outlet chamber to send the graphite tray loaded with silicon wafers into the outlet chamber, gradually increase the pressure to normal pressure under the action of the vacuum pump of the outlet chamber, and finally open the second switch The plate valve can be discharged.

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