CN111736370A - Thin-film lithium niobate-based integrated chip and preparation method thereof - Google Patents
Thin-film lithium niobate-based integrated chip and preparation method thereof Download PDFInfo
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 239000010409 thin film Substances 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 238000010168 coupling process Methods 0.000 claims abstract description 55
- 238000005859 coupling reaction Methods 0.000 claims abstract description 55
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 230000001105 regulatory effect Effects 0.000 claims abstract description 19
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000005253 cladding Methods 0.000 claims description 9
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- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 8
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- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 4
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 4
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 4
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/21—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour by interference
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
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Abstract
The invention discloses a thin film lithium niobate-based integrated chip and a preparation method thereof, wherein a substrate material is silicon-based thin film lithium niobate, a waveguide is a lithium niobate ridge waveguide, the structure of the thin film lithium niobate-based integrated chip comprises an input/output port, a Mach-Zehnder electro-optic intensity modulator and a coupling double-ring resonator, the Mach-Zehnder modulator comprises 2 1 multiplied by 2 multimode interference couplers, two modulation arms and a GSG electrode, two coupling areas of the coupling double-ring resonator adopt a coupling coefficient tuning unit based on a Mach-Zehnder interference structure, and the coupling areas and a cavity are internally provided with regulating electrodes; radio frequency signals are loaded on optical carriers through a modulator, then are processed through a resonator, and output signals are output to a detector or other unit chips through an output end, so that functions including filtering, time delay and the like are achieved. The invention realizes the functions of filtering and delaying by integrating the electro-optical modulator and the micro-ring resonator, and has the advantages of large bandwidth and quick tuning by adopting the all-silicon-based thin-film lithium niobate material.
Description
Technical Field
The invention belongs to the technical field of integrated photoelectric chips and preparation, and particularly relates to a thin-film lithium niobate-based integrated chip and a preparation method thereof.
Background
The photon technology has the outstanding advantages of large bandwidth, low transmission loss, electromagnetic interference resistance, tunability and the like, and the microwave photon technology is generated by fusing and crossing the photon technology and the radio frequency microwave technology. By modulating radio frequency microwave signals on laser, the functions of signal generation, modulation, processing, long-distance low-loss transmission and the like can be realized on the optical frequency, and the method is a key technology for leading the fields of future communication industry, radars, electronic warfare and the like. As one of the research hotspots, microwave photon signal processing has realized numerous photon signal processing functions, such as optical mixing, optical filtering, optical switching, optical delay, differentiation, integration, hilbert transform, and the like.
The traditional microwave photon signal processing is built by adopting discrete devices, so that the stability and the reliability are low, and the application is difficult to realize. With the development of silicon-based photonics, monolithic integration of an electro-optical modulator, a micro-ring filter, a photodetector, etc. (Weifeng Zhang and Jianping Yao, On-chip photonic integrated frequency-tunable band-pass photonic filter, opt.lett.43,3622-3625) has been realized by using a silicon-based photonic chip based On a CMOS process, and a band-pass filter is realized by using a principle based On phase modulation turning strength modulation, but the pass-band shape of the filter is poor, so that an ideal rectangular band-pass filtering effect cannot be realized, and the bandwidth performance of the silicon-based modulator is lower than that of a conventional bulk lithium niobate modulator. The lithium niobate material has excellent linear electro-optic effect and is the preferred material of the high-performance electro-optic modulator, wherein the thin-film lithium niobate modulator has the advantages of large bandwidth, high extinction ratio, high linearity and low insertion loss. In recent years, with the appearance of silicon-based lithium niobate thin film processing technology platforms and heterogeneous integration, it is possible to integrate a lithium niobate modulation and waveguide processing unit on a single chip.
Disclosure of Invention
The invention aims to provide a thin-film lithium niobate-based integrated chip and a preparation method thereof, which integrate an electro-optical modulator and a micro-ring resonator to obtain a filter chip with large bandwidth and better filter shape and an integrated delay chip.
The technical solution for realizing the purpose of the invention is as follows: a thin-film lithium niobate-based integrated chip is characterized in that a substrate material is silicon-based thin-film lithium niobate, an optical waveguide is a lithium niobate ridge waveguide, the structure of the chip comprises an input/output port, a Mach-Zehnder electro-optic intensity modulator and a coupling double-ring resonator, the Mach-Zehnder electro-optic intensity modulator comprises 2 1 x 2 multi-mode interference couplers, two modulation arms and a GSG electrode, two coupling regions of the coupling double-ring resonator adopt coupling coefficient tuning units based on the Mach-Zehnder interference structure, and the coupling regions and an intracavity waveguide are provided with regulating electrodes; radio frequency signals are loaded on an optical carrier through a Mach-Zehnder electro-optic intensity modulator, then are processed through a coupling double-ring resonator, and output signals are output through an output end.
Further, the thickness of lithium niobate of the silicon-based thin film lithium niobate substrate material is 600 nanometers, the thickness of the buried oxide layer is 2 micrometers or 3 micrometers, and the thickness of the silicon substrate is 500-650 nanometers.
Furthermore, the width of the lithium niobate ridge waveguide is 1-2 microns, and the upper ridge height is 250-350 nanometers.
Furthermore, the coupled double-ring resonator consists of an equivalent through waveguide, two coupling regions and two ring cavities; the two coupling areas adopt a coupling coefficient tuning unit based on a Mach-Zehnder interference structure;
the coupling coefficient tuning unit consists of 2 multiplied by 2 multimode interference couplers, two straight waveguide arms and an GS electrode, wherein the 2 multiplied by 2 multimode interference couplers are connected by the two straight waveguide arms, and the G electrode and the S electrode are respectively arranged on two sides of the upper arm and used for regulating and controlling the coupling state of the resonator;
the two ring cavities are respectively provided with a regulating electrode for regulating and controlling the in-ring phase shift of the first ring and the in-ring phase shift of the second ring, so as to regulate and control the resonance center wavelength of the resonator and realize the tuning of filtering and time delay.
Furthermore, the output end is coupled to a detector or other unit chips by adopting an end-face spot-size converter or a grating vertically.
The invention also provides a preparation method of the thin-film lithium niobate-based integrated chip, which comprises the following steps:
1) preparing a mask of a waveguide pattern on a silicon-based thin film lithium niobate substrate material by adopting a photoetching development technology;
2) etching the lithium niobate ridge waveguide by adopting a dry etching technology;
3) growing an upper cladding layer of the silicon oxide;
4) preparing a photoresist pattern of the dielectric hole by adopting a planar photoetching development technology, and etching an electrode dielectric hole;
5) and preparing the electrode by adopting an electroplating process.
Further, the waveguide mask pattern in the step 1) is prepared by adopting an electron beam exposure technology, the mask adopts HSQ electron beam negative glue, and the thickness is 500-800 nm; the waveguide etching in the step 2) adopts sulfur hexafluoride gas-based inductively coupled plasma etching, and the etching depth is 250-350 nm.
Further, the silicon oxide cladding in the step 3) grows by adopting plasma enhanced chemical vapor deposition, and the thickness of the silicon oxide is 1-3 microns.
Furthermore, the photoresist of the medium hole in the step 4) can be AZ 7908, AZ MIR 701 or AZ 4562, and the thickness is larger than the thickness of the silicon oxide cladding layer; the dielectric hole etching adopts inductively coupled plasma etching based on carbon tetrafluoride and trifluoromethane gas.
Further, the step 5) electroplating 1.5-3 micron gold on the electrode.
Compared with the prior art, the invention has the following remarkable advantages:
1) the electro-optical modulator and the micro-ring resonator are integrated to realize the functions of filtering and delaying, and the all-silicon-based thin-film lithium niobate material is adopted, so that the all-silicon-based thin-film lithium niobate modulator has the advantages of large bandwidth and quick tuning.
2) The modulator adopts a multi-mode interference coupler to carry out wave splitting and wave combining, and has more accurate splitting ratio and larger working bandwidth.
3) The coupling double-ring resonator adopts a coupling coefficient tuning structure based on a multi-mode interference coupler, and has the coupling coefficient fast tuning in a full range (0-1), so that the integrated chip is suitable for wider application frequency bands and scenes.
Drawings
FIG. 1 is a schematic structural diagram of a silicon-based thin-film lithium niobate substrate material.
FIG. 2 is a schematic illustration of waveguide etch mask preparation.
Fig. 3 is a schematic diagram of lithium niobate ridge waveguide etching.
Figure 4 is a schematic illustration of the growth of a cladding layer on silicon oxide.
Fig. 5 is a schematic diagram of a silicon oxide dielectric hole etch.
Fig. 6 is a schematic of electrode preparation.
Fig. 7 is a schematic diagram of the composition structure of a thin-film lithium niobate-based integrated chip.
Fig. 8 is a schematic diagram of the operating principle of the integrated chip.
Fig. 9 is a filter bandwidth tunable filter response graph.
FIG. 10 is a graph of a filter center wavelength tunable filter response.
Fig. 11 is a delay function delay amount adjustable graph.
Fig. 12 is a graph of the center wavelength tunability of the delay function.
In fig. 7: a is an optical input port, b is a Mach-Zehnder electro-optic intensity modulator, c is a connecting waveguide, d is a coupling double-ring resonator, d.1 and d.2 are coupling regions of two rings, e is an optical output end, 1 is a 1 × 2 multimode interference coupler, 2 is two arms of the modulator, 3 is a modulator GSG electrode, 4 is a coupling double-ring resonant cavity waveguide, 5 is a first ring coupling coefficient regulating GS electrode, 6 is a second ring coupling coefficient regulating GS electrode, 7 is an in-ring phase regulating GS electrode of the first ring, 8 is an in-ring phase regulating GS electrode of the second ring, and 9 is a 2 × 2 multimode interference coupler.
Detailed Description
As shown in fig. 7, the thin film lithium niobate-based integrated chip has a substrate made of silicon-based thin film lithium niobate, an optical waveguide made of lithium niobate ridge optical waveguide, and a structure including an input port a, an output port e, a mach-zehnder electro-optic intensity modulator b, and a coupled double-ring resonator d, wherein the mach-zehnder electro-optic intensity modulator b and the coupled double-ring resonator d are connected by a connecting waveguide c; the Mach-Zehnder modulator b comprises 2 1 multiplied by 2 multi-mode interference couplers 1, two modulation arms 2 and GSG electrodes 3, wherein the 2 1 multiplied by 2 multi-mode interference couplers 1 are connected through the two modulation arms 2, and the GSG electrodes 3 are arranged on two sides of the two modulation arms 2; two coupling areas d.1 and d.2 of the coupling double-ring resonator d adopt a coupling coefficient tuning unit based on a Mach-Zehnder interference structure, the coupling areas and the intracavity waveguide 4 are provided with regulating electrodes 5, 6, 7 and 8, the coupling coefficient of the first ring, the coupling coefficient of the second ring, the in-ring phase shift of the first ring and the in-ring phase shift of the second ring are respectively regulated and controlled, the effects of regulating and controlling the coupling state (over-coupling, critical coupling and under-coupling) and the resonance center wavelength of the resonator are achieved, and finally the tuning of filtering and delaying is realized.
The radio frequency signal is loaded on the optical carrier through the modulator, then is processed by the resonator, and the output signal is output to the detector or other unit chips through the output end, thereby realizing the functions of filtering and delaying.
The substrate material is silicon-based thin film lithium niobate, the thickness of the lithium niobate is 600 nanometers, the thickness of the oxygen buried layer is 2 micrometers or 3 micrometers, and the thickness of the silicon substrate is 500-650 nanometers.
The width of the lithium niobate ridge optical waveguide is 1-2 microns, and the upper ridge height is 250-350 nanometers.
The coupling double-ring resonator consists of an equivalent through waveguide, two coupling regions and two ring cavities;
the coupling coefficient tuning unit is composed of 2 × 2 multimode interference couplers 9, two straight waveguide arms and an GS electrode, wherein the 2 × 2 multimode interference couplers are connected by the two straight waveguide arms, and the G electrode and the S electrode are respectively arranged on two sides of the upper arm and used for regulating and controlling the coupling state of the resonator.
The two ring cavities are respectively provided with a regulating electrode for regulating and controlling the in-ring phase shift of the first ring (corresponding electrode 7) and the in-ring phase shift of the second ring (corresponding electrode 8) so as to regulate and control the resonance center wavelength of the resonator and realize the tuning of filtering and time delay.
The output end can be coupled with a detector or other unit chips by adopting an end-face spot-size converter or a grating vertically.
The output end can integrate the InP/InGaAs detector on the integrated chip directly through heterogeneous integration technology, thereby realizing monolithic integration of filtering and time delay chips.
FIG. 8 is a schematic diagram showing the working principle of a thin-film lithium niobate-based integrated chip, in which a radio frequency signal is modulated onto an optical carrier, as shown by a modulation spectrum, the thin-film lithium niobate-based integrated chip has an upper sideband and a lower sideband, and fCIs the optical carrier frequency, feIs the frequency of the radio frequency signal; the coupling double-ring resonator is in notch response, the notch center is aligned to an upper sideband or a lower sideband, namely one sideband is filtered, the filter response of the notch is obtained after detection, as shown by an amplitude response curve, and meanwhile, the group delay can be obtained according to the phase response, and is the derivative of the phase response with respect to the angular frequency.
The resonator response can be tuned by arranging 4 electrodes, the voltages loaded on the electrodes 5, 6, 7 and 8 are respectively U1, U2, U3 and U4, then U1 regulates the coupling coefficient of a first ring, U2 regulates the coupling coefficient of a second ring, U3 regulates the intra-ring phase shift of the first ring, and U4 regulates the intra-ring phase shift of the second ring.
The preparation method specifically comprises the following steps:
1) preparing a mask of a waveguide pattern on a silicon-based thin film lithium niobate substrate material by adopting an electron beam exposure technology, wherein the electron beam glue adopts HSQ negative glue, and the thickness is 500-800 nm, as shown in figures 1 and 2;
2) preparing a lithium niobate waveguide by adopting sulfur hexafluoride gas-based inductively coupled plasma etching, wherein the etching depth is 250-350 nm, as shown in FIG. 3;
3) growing an upper cladding layer of silicon oxide with a thickness of 1-3 microns by plasma enhanced chemical vapor deposition, as shown in FIG. 4;
4) preparing a photoresist pattern of the dielectric hole by adopting a planar photoetching development technology, wherein the photoresist can be AZ 7908, AZMIR 701 or AZ 4562, the thickness of the photoresist is larger than the thickness of the silicon oxide coating, and the electrode dielectric hole is etched by adopting inductive coupling plasma based on carbon tetrafluoride and trifluoromethane gas, as shown in figure 5;
5) the chip is prepared by electroplating 1.5-3 μm gold as an electrode, as shown in fig. 6.
The filtering, delay and preparation method of the present invention will be described in detail with reference to the following embodiments and the accompanying drawings.
Example 1
The filtering and time delay implementation method comprises the following steps:
1) debugging in an initial state: first the U1 is adjusted to tune the first loop to the over-coupled state, then the U3 and U4 are adjusted to tune the resonant wavelengths of the two resonators to be the same, i.e., to a resonant peak, and the U2 is adjusted to tune the second loop to the over-coupled state.
2) And (3) filtering with adjustable bandwidth: in the initial state, changing U2 (in the over-coupled state) and tuning U1 accordingly achieves a center wavelength-invariant bandwidth-tunable filter response, as shown in fig. 9.
3) Center wavelength tunable filtering: in the initial state, U1 is changed to achieve a filter response with a tunable center wavelength with a constant bandwidth, as shown in fig. 10.
4) And (3) filtering with adjustable bandwidth and central wavelength simultaneously: in the initial state, changing U2 (in the over-coupled state) and changing U1 simultaneously achieves a filter response with adjustable bandwidth and center wavelength simultaneously.
5) Adjustable delay of delay amount: in the initial state, changing U2 (in the over-coupled state) and tuning U1 accordingly achieves a center wavelength invariant delay amount adjustable delay, as shown in fig. 11.
6) Adjustable time delay of central wavelength: in the initial state, U1 is changed to achieve a center wavelength tunable delay, as shown in fig. 12.
6) The delay amount and the central wavelength can be simultaneously adjusted: in the initial state, U2 is changed (in the over-coupled state) and U1 is changed simultaneously, so that the delay time with the delay amount and the center wavelength adjustable simultaneously is realized.
The above-described embodiments of filtering and delaying are only preferred embodiments of the present invention, and it should be noted that those skilled in the art can make several improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be considered as the protection scope of the present invention.
Example 2
A preparation method of a thin film lithium niobate-based integrated chip specifically comprises the following steps:
1) preparing a mask with a waveguide pattern on a silicon-based thin film lithium niobate substrate material by adopting an electron beam exposure technology, wherein the electron beam glue adopts HSQ negative glue, and the thickness of the electron beam glue is 600 nanometers, as shown in figures 1 and 2;
2) preparing a lithium niobate waveguide by adopting inductive coupling plasma etching based on sulfur hexafluoride gas, wherein the etching depth is 300 nanometers, as shown in figure 3;
3) growing an upper cladding layer of silicon oxide with a thickness of 2 microns by plasma enhanced chemical vapor deposition, as shown in FIG. 4;
4) preparing a photoresist pattern of the dielectric hole by adopting a planar photoetching development technology, wherein the photoresist adopts AZ MIR 701 and has the thickness of 2.5 microns, and an electrode dielectric hole is etched by adopting inductive coupling plasma based on carbon tetrafluoride and trifluoromethane gas, as shown in figure 5;
5) the chip is prepared by electroplating 1.5-3 μm gold as an electrode, as shown in fig. 6.
Claims (10)
1. A thin film lithium niobate-based integrated chip is characterized in that a substrate material is silicon-based thin film lithium niobate, an optical waveguide is a lithium niobate ridge waveguide, and the structure of the thin film lithium niobate-based integrated chip comprises an input/output port, a Mach-Zehnder electro-optic intensity modulator and a coupling double-ring resonator, wherein the Mach-Zehnder electro-optic intensity modulator comprises 2 1 × 2 multimode interference couplers, two modulation arms and a GSG electrode, two coupling regions of the coupling double-ring resonator adopt a coupling coefficient tuning unit based on a Mach-Zehnder interference structure, and the coupling regions and an intracavity waveguide are provided with regulating electrodes; radio frequency signals are loaded on an optical carrier through a Mach-Zehnder electro-optic intensity modulator, then are processed through a coupling double-ring resonator, and output signals are output through an output end.
2. The thin-film lithium niobate-based integrated chip of claim 1, wherein the thickness of the lithium niobate of the silicon-based thin-film lithium niobate substrate material is 600 nm, the thickness of the buried oxide layer is 2 microns or 3 microns, and the thickness of the silicon substrate is 500-650 nm.
3. The thin-film lithium niobate-based integrated chip of claim 1, wherein the width of the lithium niobate ridge waveguide is 1-2 μm, and the upper ridge height is 250-350 nm.
4. The thin-film lithium niobate-based integrated chip of claim 1, wherein the coupled double-ring resonator is composed of an equivalent through waveguide, two coupling regions and two ring cavities; the two coupling areas adopt a coupling coefficient tuning unit based on a Mach-Zehnder interference structure;
the coupling coefficient tuning unit consists of 2 multiplied by 2 multimode interference couplers, two straight waveguide arms and an GS electrode, wherein the 2 multiplied by 2 multimode interference couplers are connected by the two straight waveguide arms, and the G electrode and the S electrode are respectively arranged on two sides of the upper arm and used for regulating and controlling the coupling state of the resonator;
the two ring cavities are respectively provided with a regulating electrode for regulating and controlling the in-ring phase shift of the first ring and the in-ring phase shift of the second ring, so as to regulate and control the resonance center wavelength of the resonator and realize the tuning of filtering and time delay.
5. The thin-film lithium niobate-based integrated chip of claim 1, wherein the output terminal is coupled to a detector or other unit chip by using an end-face spot-size converter or a grating.
6. A method for preparing a thin-film lithium niobate-based integrated chip as claimed in any one of claims 1 to 5, comprising the steps of:
1) preparing a mask of a waveguide pattern on a silicon-based thin film lithium niobate substrate material by adopting a photoetching development technology;
2) etching the lithium niobate ridge waveguide by adopting a dry etching technology;
3) growing an upper cladding layer of the silicon oxide;
4) preparing a photoresist pattern of the dielectric hole by adopting a planar photoetching development technology, and etching an electrode dielectric hole;
5) and preparing the electrode by adopting an electroplating process.
7. The method for preparing a thin film lithium niobate-based integrated chip as claimed in claim 6, wherein the waveguide mask pattern in step 1) is prepared by electron beam exposure technology, the mask is made of HSQ electron beam negative resist with a thickness of 500-800 nm; the waveguide etching in the step 2) adopts sulfur hexafluoride gas-based inductively coupled plasma etching, and the etching depth is 250-350 nm.
8. The method for preparing the thin-film lithium niobate-based integrated chip according to claim 6, wherein the silicon oxide cladding growth in the step 3) is grown by plasma enhanced chemical vapor deposition, and the thickness of the silicon oxide is 1-3 μm.
9. The method for preparing the thin-film lithium niobate-based integrated chip according to claim 6, wherein the photoresist of the dielectric hole in the step 4) can be AZ 7908, AZ MIR 701 or AZ 4562, and the thickness is larger than the thickness of the silicon oxide cladding layer; the dielectric hole etching adopts inductively coupled plasma etching based on carbon tetrafluoride and trifluoromethane gas.
10. The method for preparing a thin-film lithium niobate-based integrated chip according to claim 6, wherein the electrode of step 5) is plated with 1.5-3 μm of gold.
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Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111781675A (en) * | 2020-06-30 | 2020-10-16 | 天津大学 | A convex multi-mode optical waveguide and multi-mode dispersion control method |
| CN112202048A (en) * | 2020-10-09 | 2021-01-08 | 联合微电子中心有限责任公司 | External cavity laser, preparation method thereof and wavelength tuning method |
| CN112859389A (en) * | 2021-01-14 | 2021-05-28 | 中国电子科技集团公司第五十五研究所 | Thin-film lithium niobate electro-optical switch |
| CN112965271A (en) * | 2021-02-05 | 2021-06-15 | 中国电子科技集团公司第四十四研究所 | Lithium niobate thin film double Y branch optical waveguide phase modulator |
| CN112965272A (en) * | 2021-02-05 | 2021-06-15 | 中国电子科技集团公司第四十四研究所 | Single-side output lithium niobate thin film double Y branch optical waveguide phase modulator |
| CN112965270A (en) * | 2021-02-05 | 2021-06-15 | 中国电子科技集团公司第四十四研究所 | Lithium niobate thin film double Y branch optical waveguide modulator adopting curve optical waveguide connection |
| CN113325518A (en) * | 2021-05-31 | 2021-08-31 | 吉林大学 | Silicon dioxide flat plate optical waveguide tunable micro-ring resonator with ultra-narrow line width and preparation method thereof |
| CN113419362A (en) * | 2021-07-09 | 2021-09-21 | 清华大学 | Lithium niobate modulator and passive compensation method for static bias point thereof |
| CN113534504A (en) * | 2021-07-27 | 2021-10-22 | 华中科技大学 | A method and device for electrically controllable polarization beam splitting based on thin-film lithium niobate |
| CN113641012A (en) * | 2021-08-20 | 2021-11-12 | 南京南智先进光电集成技术研究院有限公司 | On-chip integrated lithium niobate multi-wave composite processing device and preparation method thereof |
| CN114038923A (en) * | 2021-10-31 | 2022-02-11 | 南京中电芯谷高频器件产业技术研究院有限公司 | A thin-film lithium niobate optical waveguide and an InP-based photodetector hetero-integrated structure |
| CN114063212A (en) * | 2021-11-19 | 2022-02-18 | 上海安湃芯研科技有限公司 | Monolithic integrated beam splitting modulation chip based on thin-film lithium niobate |
| CN114124239A (en) * | 2021-11-12 | 2022-03-01 | 天津津航技术物理研究所 | Integrated photoelectric oscillator and system |
| CN114124225A (en) * | 2021-11-12 | 2022-03-01 | 天津津航技术物理研究所 | Tunable integrated photo-generated microwave source chip and system based on lithium niobate thin film |
| CN114371561A (en) * | 2021-12-31 | 2022-04-19 | 苏州易缆微半导体技术有限公司 | A method for fabricating a self-aligned high-precision modulator |
| CN114609726A (en) * | 2020-12-08 | 2022-06-10 | 军事科学院系统工程研究院网络信息研究所 | Ultra-narrow band filtering method based on-harmonic chip integrated cascade filter |
| CN114609808A (en) * | 2020-12-08 | 2022-06-10 | 军事科学院系统工程研究院网络信息研究所 | Chip-integrated electro-optical signal conversion method based on two-dimensional layered material film |
| CN114994960A (en) * | 2022-05-08 | 2022-09-02 | 上海图灵智算量子科技有限公司 | Electrode assembly, modulator and chip |
| CN116300151A (en) * | 2023-04-07 | 2023-06-23 | 武汉安湃光电有限公司 | Electro-optical frequency comb chip based on film lithium niobate |
| CN116466529A (en) * | 2023-04-19 | 2023-07-21 | 山东大学 | Optical cross-wavelength division multiplexer and method based on silicon and lithium niobate composite thin film |
| CN116841063A (en) * | 2022-03-24 | 2023-10-03 | 上海交通大学 | Silicon-silicon oxide-lithium niobate high-bandwidth electro-optic modulator and integration method |
| CN118883981A (en) * | 2024-07-26 | 2024-11-01 | 北京微厘光电技术有限公司 | A hybrid integrated laser Doppler velocimeter based on thin-film lithium niobate chip and its use method |
| CN119511600A (en) * | 2025-01-15 | 2025-02-25 | 华南理工大学 | A hybrid storage and computing architecture of lithium niobate photonic chip and its implementation method |
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| CN111781675A (en) * | 2020-06-30 | 2020-10-16 | 天津大学 | A convex multi-mode optical waveguide and multi-mode dispersion control method |
| CN112202048A (en) * | 2020-10-09 | 2021-01-08 | 联合微电子中心有限责任公司 | External cavity laser, preparation method thereof and wavelength tuning method |
| CN112202048B (en) * | 2020-10-09 | 2022-02-01 | 联合微电子中心有限责任公司 | External cavity laser, preparation method thereof and wavelength tuning method |
| CN114609726B (en) * | 2020-12-08 | 2023-12-12 | 军事科学院系统工程研究院网络信息研究所 | Ultra-narrow band filtering method based on harmonic chip integrated cascade filter |
| CN114609726A (en) * | 2020-12-08 | 2022-06-10 | 军事科学院系统工程研究院网络信息研究所 | Ultra-narrow band filtering method based on-harmonic chip integrated cascade filter |
| CN114609808A (en) * | 2020-12-08 | 2022-06-10 | 军事科学院系统工程研究院网络信息研究所 | Chip-integrated electro-optical signal conversion method based on two-dimensional layered material film |
| CN112859389A (en) * | 2021-01-14 | 2021-05-28 | 中国电子科技集团公司第五十五研究所 | Thin-film lithium niobate electro-optical switch |
| CN112965271A (en) * | 2021-02-05 | 2021-06-15 | 中国电子科技集团公司第四十四研究所 | Lithium niobate thin film double Y branch optical waveguide phase modulator |
| CN112965272A (en) * | 2021-02-05 | 2021-06-15 | 中国电子科技集团公司第四十四研究所 | Single-side output lithium niobate thin film double Y branch optical waveguide phase modulator |
| CN112965270A (en) * | 2021-02-05 | 2021-06-15 | 中国电子科技集团公司第四十四研究所 | Lithium niobate thin film double Y branch optical waveguide modulator adopting curve optical waveguide connection |
| CN113325518A (en) * | 2021-05-31 | 2021-08-31 | 吉林大学 | Silicon dioxide flat plate optical waveguide tunable micro-ring resonator with ultra-narrow line width and preparation method thereof |
| CN113419362A (en) * | 2021-07-09 | 2021-09-21 | 清华大学 | Lithium niobate modulator and passive compensation method for static bias point thereof |
| CN113534504A (en) * | 2021-07-27 | 2021-10-22 | 华中科技大学 | A method and device for electrically controllable polarization beam splitting based on thin-film lithium niobate |
| CN113641012A (en) * | 2021-08-20 | 2021-11-12 | 南京南智先进光电集成技术研究院有限公司 | On-chip integrated lithium niobate multi-wave composite processing device and preparation method thereof |
| CN114038923B (en) * | 2021-10-31 | 2024-04-02 | 南京中电芯谷高频器件产业技术研究院有限公司 | A heterogeneous integrated structure of thin film lithium niobate optical waveguide and InP-based photodetector |
| CN114038923A (en) * | 2021-10-31 | 2022-02-11 | 南京中电芯谷高频器件产业技术研究院有限公司 | A thin-film lithium niobate optical waveguide and an InP-based photodetector hetero-integrated structure |
| CN114124225A (en) * | 2021-11-12 | 2022-03-01 | 天津津航技术物理研究所 | Tunable integrated photo-generated microwave source chip and system based on lithium niobate thin film |
| CN114124239A (en) * | 2021-11-12 | 2022-03-01 | 天津津航技术物理研究所 | Integrated photoelectric oscillator and system |
| CN114124225B (en) * | 2021-11-12 | 2024-03-22 | 天津津航技术物理研究所 | Tunable integrated photo-generated microwave source chip and system based on lithium niobate thin film |
| CN114063212B (en) * | 2021-11-19 | 2023-11-21 | 武汉安湃光电有限公司 | Monolithic integrated beam-splitting modulation chip based on film lithium niobate |
| CN114063212A (en) * | 2021-11-19 | 2022-02-18 | 上海安湃芯研科技有限公司 | Monolithic integrated beam splitting modulation chip based on thin-film lithium niobate |
| CN114371561B (en) * | 2021-12-31 | 2025-06-10 | 苏州易缆微半导体技术有限公司 | Preparation method of self-aligned high-precision modulator |
| CN114371561A (en) * | 2021-12-31 | 2022-04-19 | 苏州易缆微半导体技术有限公司 | A method for fabricating a self-aligned high-precision modulator |
| CN116841063A (en) * | 2022-03-24 | 2023-10-03 | 上海交通大学 | Silicon-silicon oxide-lithium niobate high-bandwidth electro-optic modulator and integration method |
| CN114994960A (en) * | 2022-05-08 | 2022-09-02 | 上海图灵智算量子科技有限公司 | Electrode assembly, modulator and chip |
| CN116300151A (en) * | 2023-04-07 | 2023-06-23 | 武汉安湃光电有限公司 | Electro-optical frequency comb chip based on film lithium niobate |
| CN116466529A (en) * | 2023-04-19 | 2023-07-21 | 山东大学 | Optical cross-wavelength division multiplexer and method based on silicon and lithium niobate composite thin film |
| CN118883981A (en) * | 2024-07-26 | 2024-11-01 | 北京微厘光电技术有限公司 | A hybrid integrated laser Doppler velocimeter based on thin-film lithium niobate chip and its use method |
| CN119511600A (en) * | 2025-01-15 | 2025-02-25 | 华南理工大学 | A hybrid storage and computing architecture of lithium niobate photonic chip and its implementation method |
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