CN111676464A - Exhaust device of semiconductor processing equipment and semiconductor processing equipment - Google Patents
Exhaust device of semiconductor processing equipment and semiconductor processing equipment Download PDFInfo
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- CN111676464A CN111676464A CN202010553514.5A CN202010553514A CN111676464A CN 111676464 A CN111676464 A CN 111676464A CN 202010553514 A CN202010553514 A CN 202010553514A CN 111676464 A CN111676464 A CN 111676464A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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Abstract
The invention provides an exhaust device of semiconductor processing equipment and the semiconductor processing equipment, wherein the exhaust device comprises an exhaust pipeline, an air source, a heating pipeline and at least one first purging pipeline; the gas source and the purging pipeline are both communicated with the heating pipeline, the heating pipeline is used for heating the purging gas passing through the heating pipeline to a preset temperature, and the preset temperature meets the temperature capable of enabling the process byproduct particles to form a gas state; the first purge line is arranged between the heating line and the exhaust line and used for transmitting purge gas heated by the heating line into the exhaust line. The exhaust device of the semiconductor processing equipment and the semiconductor processing equipment can reduce the number of process by-product particles attached to the exhaust pipeline in the process, thereby improving the stability of the process result, prolonging the maintenance period of the semiconductor processing equipment and improving the process efficiency of the semiconductor processing equipment.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to an exhaust device of semiconductor processing equipment and the semiconductor processing equipment.
Background
The silicon nitride film fabrication technology is an important process in the fabrication of semiconductor integrated circuits, has good step coverage and high uniformity, and is generally prepared by a Low Pressure Chemical Vapor Deposition (LPCVD) process. In the process of preparing a silicon nitride film by adopting an LPCVD (low pressure chemical vapor deposition) process, the conventional vertical furnace equipment has the advantages that the original gas in the reaction chamber is pumped away by the vacuum pump through the exhaust pipeline before the process is started, conditions are created for introducing the reaction gas in the subsequent process steps, and a process by-product (ammonium chloride) generated in the reaction chamber is pumped away by the vacuum pump through the exhaust pipeline in the process, so that the process by-product is prevented from falling on a silicon wafer and affecting the process result of the silicon wafer.
Ammonium chloride is decomposed into ammonia gas and hydrogen chloride gas at the process reaction temperature (780 ℃) and is continuously pumped away by a vacuum pump, and because the wall thickness (6mm) and the inner diameter (80mm) of the exhaust pipeline are large, even if the outer wall of the exhaust pipeline wraps a heating layer, cold spots exist in the exhaust pipeline due to uneven temperature distribution, so that a small part of ammonia gas and hydrogen chloride gas can be spontaneously combined to form ammonium chloride crystals to be attached to the inner wall of the exhaust pipeline when passing through the exhaust pipeline, and the ammonium chloride crystals attached to the inner wall of the exhaust pipeline can be reversely poured into a reaction cavity when the pressure in the reaction cavity is smaller than the pressure in the exhaust pipeline, so that the surface particles of a silicon wafer are increased after the process is finished, and the process result is influenced.
In order to solve these problems, the conventional method is to periodically perform maintenance on the semiconductor processing equipment to reduce particle contamination during the production process, and this method will inevitably affect the number of silicon wafers that can be processed in a unit time of the semiconductor processing equipment, which results in a decrease in the efficiency of the semiconductor processing equipment.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides an exhaust device of semiconductor processing equipment and the semiconductor processing equipment, which can reduce the number of process by-product particles attached in an exhaust pipeline in the process, thereby improving the stability of process results, prolonging the maintenance period of the semiconductor processing equipment and improving the process efficiency of the semiconductor processing equipment.
The invention provides an exhaust device of semiconductor processing equipment, which comprises an exhaust pipeline connected with a reaction chamber of the semiconductor processing equipment, a gas source, a heating pipeline and at least one first purging pipeline, wherein,
the gas source is used for providing purge gas;
the gas source and the first purging pipeline are both communicated with the heating pipeline, the heating pipeline is used for heating the purging gas passing through the heating pipeline to a preset temperature, and the preset temperature meets the temperature capable of enabling the process byproduct particles to form a gas state;
the first purge line is disposed between the heating line and the exhaust line, and is used for transmitting the purge gas heated by the heating line to the exhaust line.
Preferably, the heating pipeline comprises a first inner layer pipeline and a first outer layer pipeline, the first outer layer pipeline is sleeved on the periphery of the first inner layer pipeline, a heating element is arranged between the first inner layer pipeline and the first outer layer pipeline, and the air source and the first blowing pipeline are communicated with the first inner layer pipeline.
Preferably, the heating element comprises a heating wire wound around the first inner layer pipeline.
Preferably, the exhaust device further comprises a cooling device, and the cooling device is arranged around the first outer layer pipeline and is used for cooling the pipe wall of the first outer layer pipeline.
Preferably, a temperature control element is arranged in the first inner layer pipeline, and the temperature control element is electrically connected with the heating element and used for detecting the real-time temperature of the purging gas in the first inner layer pipeline and controlling the heating temperature of the heating element according to the real-time temperature so as to reach the preset temperature.
Preferably, the first purge pipelines are both provided with a one-way valve and a flowmeter.
Preferably, the exhaust device further comprises a pressure measuring pipeline and a pressure measuring element, the pressure measuring pipeline is connected with the exhaust pipeline, and the pressure measuring element is arranged on the pressure measuring pipeline and used for detecting the pressure in the pressure measuring pipeline.
Preferably, the exhaust device further comprises at least one second purging line, and the second purging line is arranged between the heating line and the pressure measuring line and is used for conveying the purging gas heated by the heating line into the pressure measuring line.
Preferably, the exhaust device comprises two second purging pipelines, and an air outlet of one of the second purging pipelines is communicated with the head end of the pressure measuring pipeline, and an air outlet of the other second purging pipeline is communicated with the tail end of the pressure measuring pipeline;
and two second purging pipelines are provided with a one-way valve and a flowmeter.
The invention also provides semiconductor processing equipment which comprises a reaction chamber and an exhaust device, wherein the exhaust device is connected with the reaction chamber and used for exhausting gas in the reaction chamber, and the exhaust device provided by the invention is adopted.
The invention has the following beneficial effects:
the exhaust device of the semiconductor processing equipment provided by the invention heats the purge gas passing through the heating pipeline to the preset temperature which can enable process byproduct particles to form gas by means of the heating pipeline, transmits the purge gas heated by the heating pipeline to the exhaust pipeline by means of the first purge pipeline arranged between the heating pipeline and the exhaust pipeline, can introduce the purge gas which can enable the process byproduct particles to form gaseous state into the exhaust pipeline in the process, enables the interior of the exhaust pipeline to be maintained at the temperature which enables the process byproduct particles to form gaseous state, inhibits the process byproduct from forming particles in the exhaust pipeline, enables the process byproduct to be exhausted from the exhaust pipeline in the gaseous state, avoids the process byproduct particles from being attached in the exhaust pipeline, and can simultaneously purge the process byproduct particles which are generated immediately but are not attached, therefore, the quantity of process byproduct particles attached to the exhaust pipeline in the process can be reduced, the stability of the process result is improved, the maintenance period of the semiconductor processing equipment is prolonged, and the process efficiency of the semiconductor processing equipment is improved.
The semiconductor processing equipment provided by the invention exhausts the gas in the reaction chamber by virtue of the exhaust device of the semiconductor processing equipment provided by the invention, so that the number of process by-product particles attached in an exhaust pipeline in the process can be reduced, the stability of a process result is improved, the maintenance period of the semiconductor processing equipment is prolonged, and the process efficiency of the semiconductor processing equipment is improved.
Drawings
Fig. 1 is a schematic structural diagram of an exhaust device of a semiconductor processing apparatus and the semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a purge line in an exhaust apparatus of a semiconductor processing apparatus according to an embodiment of the present invention;
description of reference numerals:
10-a reaction chamber; 11-an exhaust line; 111-a flexible tube section; 112-a rigid pipe section; 121-a first purge line; 122-a second purge line; 13-heating the pipeline; 131-a first inner layer pipeline; 132-a first outer layer of tubing; 133-a heating wire; 14-a gas source; 15-cooling the pipeline; 151-inner layer cooling circuit; 152-outer cooling pipe; 16-a temperature control element; 17-a pressure measuring pipeline; 18-a load cell; 19-a flow meter; 21-a collecting device; 22-an exhaust gas treatment device; 23-an air pump; 24-a pressure regulating valve; 25-a one-way valve; 26-on-off valve; 27-overpressure vent valve.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the exhaust device of a semiconductor processing apparatus and the semiconductor processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1 and 2, the present embodiment provides an exhaust apparatus of a semiconductor processing apparatus, comprising an exhaust line 11 connected to a reaction chamber 10 of the semiconductor processing apparatus, a gas source 14, a heating line 13, and at least one first purge line 121, wherein the gas source 14 is used for providing a purge gas; the gas source 14 and the first purge line 121 are both communicated with the heating line 13, the heating line 13 is used for heating the purge gas passing through the heating line 13 to a preset temperature, and the preset temperature meets the temperature capable of enabling the process byproduct particles to form a gas state; the first purge lines 121 are disposed between the heating line 13 and the exhaust line 11, and are used for transmitting the purge gas heated by the heating line 13 into the exhaust line 11.
The exhaust apparatus of the semiconductor processing equipment provided in this embodiment heats the purge gas passing through the heating line 13 to a preset temperature enabling particles of the process byproducts to form gas by means of the heating line 13, and transmits the purge gas heated by the heating line 13 to the exhaust line 11 by means of the first purge line 121 disposed between the heating line 13 and the exhaust line 11, so as to transmit the purge gas enabling the particles of the process byproducts to form gas into the exhaust line 11 during the process, so that the inside of the exhaust line 11 can be maintained at a temperature enabling the particles of the process byproducts to form gas, so as to inhibit the particles of the process byproducts from forming in the exhaust line 11, so that the process byproducts can be exhausted from the exhaust line 11 in a gas state, so as to prevent the particles of the process byproducts from attaching to the exhaust line 11, and simultaneously, the exhaust apparatus can purge the particles of the process byproducts which are generated but have not yet attached, therefore, the number of process byproduct particles attached to the exhaust pipeline 11 in the process can be reduced, the stability of the process result is improved, the maintenance period of the semiconductor processing equipment is prolonged, and the process efficiency of the semiconductor processing equipment is improved.
Specifically, the process byproduct is ammonium chloride, the heating line 13 is used to heat the purge gas passing through the heating line 13 to a preset temperature at which ammonium chloride crystal particles can form ammonia gas and hydrogen chloride gas, the first purge line 121 is used to transmit the purge gas reaching the preset temperature to the exhaust line 11, so that the inside of the exhaust line 11 can be maintained at a temperature at which ammonium chloride crystal particles can form ammonia gas and hydrogen chloride gas, thereby inhibiting ammonium chloride from forming particles in the exhaust line 11, and ammonium chloride can be exhausted from the exhaust line 11 in the form of ammonia gas and hydrogen chloride gas, thereby preventing ammonium chloride crystal forming particles from attaching to the exhaust line 11, and simultaneously, ammonium chloride crystal particles which are just generated but have not yet attached can be purged, thereby reducing the number of ammonium chloride crystal particles attaching to the exhaust line 11, and further, the stability of the process result is improved, the maintenance period of the semiconductor processing equipment is prolonged, and the process efficiency of the semiconductor processing equipment is improved.
In the present embodiment, the preset temperature may be greater than or equal to 200 ℃.
In the present embodiment, nitrogen (N) may be used as the purge gas2). Preferably, high purity nitrogen (P-N) gas may be used2)。
Optionally, the exhaust apparatus of the semiconductor processing apparatus may further include a collecting device 21, and the collecting device 21 is connected to the exhaust line 11, and is configured to cool the gaseous process by-products exhausted from the exhaust line 11, so that the gaseous process by-products are crystallized into particles, thereby collecting the process by-products in the form of particles.
Optionally, the exhaust device of the semiconductor processing apparatus may further include an exhaust gas treatment device 22, where the exhaust gas treatment device 22 is connected to the exhaust pipe 11, and is configured to perform a combustion treatment on the gaseous process byproducts exhausted from the exhaust pipe 11 to remove harmful gases in the process byproducts, and then exhaust the treated process byproducts without harmful gases to avoid environmental pollution caused by the process byproducts.
Optionally, the exhaust apparatus of the semiconductor processing apparatus may further include an air pump 23 and a pressure regulating valve 24, wherein the air pump 23 is connected to the exhaust pipeline 11, and is configured to pump the exhaust pipeline 11 so as to continuously pump the process byproducts generated in the reaction chamber 10 during the process, and may perform a vacuum process on the reaction chamber 10 before the process starts; a pressure regulating valve 24 is provided on the exhaust line 11, and the pressure regulating valve 24 is used to regulate the flow rate of gas that the exhaust line 11 can pass through, so that the pressure in the reaction chamber 10 can be maintained at the process pressure during the process, and the pressure in the reaction chamber 10 can be regulated to the process pressure before the process starts.
As shown in fig. 2, in the present embodiment, the heating pipeline 13 includes a first inner pipeline 131 and a first outer pipeline 132, the first outer pipeline 132 is sleeved around the first inner pipeline 131, and a heating element is disposed between the first inner pipeline 131 and the first outer pipeline 132, and the gas source 14 and the ground purge pipeline 121 are both communicated with the first inner pipeline 131, so as to transmit the purge gas heated by the heating pipeline 13 to the exhaust pipeline 11 through the first inner pipeline 131.
The strength of the heating pipeline 13 can be improved by the first inner pipeline 131 and the first outer pipeline 132, so that the wall of the first inner pipeline 131 can be designed to be thinner, and the heating element arranged between the first outer pipeline 132 and the first inner pipeline 131 can improve the heating efficiency of the inside of the first inner pipeline 131, thereby improving the temperature rising speed of the purging gas passing through the first inner pipeline 131. Moreover, since the first outer layer pipeline 132 is sleeved around the first inner layer pipeline 131, the temperature dissipation speed of the first inner layer pipeline 131 can be reduced by means of the first outer layer pipeline 132, so that the temperature stability of the purge gas passing through the first inner layer pipeline 131 is improved, the number of process byproduct particles attached to the exhaust pipeline 11 in the process can be further reduced, the stability of the process result is further improved, the maintenance period of the semiconductor processing equipment is prolonged, and the process efficiency of the semiconductor processing equipment is improved.
As shown in fig. 2, in the present embodiment, the heating element includes a heating wire 133, and the heating wire 133 is wound around the first inner pipe 131 to heat the purge gas passing through the first inner pipe 131, so that the temperature of the purge gas passing through the first purge pipe 121 can reach a preset temperature.
In this embodiment, the exhaust apparatus further includes a cooling device, and the cooling device is disposed around the first outer layer pipeline 132 and is used for cooling the pipe wall of the first outer layer pipeline 132, so as to prevent the high temperature of the pipe wall of the first outer layer pipeline 132 from scalding the worker, thereby improving the safety of the exhaust apparatus.
As shown in fig. 2, in the present embodiment, the cooling device may employ a cooling pipeline 15, and the cooling pipeline 15 may include an inner layer cooling pipeline 151 and an outer layer cooling pipeline 152, wherein the inner layer cooling pipeline 151 is disposed around the first outer layer pipeline 132, and the outer layer cooling pipeline 152 is disposed around the inner layer cooling pipeline 151 and forms a cooling channel with the inner layer cooling pipeline 151, and the cooling channel is used for circulating a cooling medium.
Alternatively, the cooling medium may be cooling water.
As shown in fig. 2, in the embodiment, a temperature control element 16 is disposed in the first inner pipeline 131, and the temperature control element 16 is electrically connected to the heating element, and is configured to detect a real-time temperature of the purge gas in the first inner pipeline 131, and control a heating temperature of the heating element according to the real-time temperature to reach a preset temperature, so as to improve a stability of the temperature of the purge gas passing through the first inner pipeline 131, and further reduce a number of process byproduct particles attached to the exhaust pipeline 11 in a process, thereby further improving a stability of a process result, prolonging a maintenance period of the semiconductor processing equipment, and improving a process efficiency of the semiconductor processing equipment.
Alternatively, the temperature control element 16 may employ a temperature control thermocouple.
In the present embodiment, the check valve 25 and the flow meter 19 are provided on each of the first purge lines 121. The flow meter 19 is configured to control a flow rate of the purge gas that the first purge line 121 can pass through, and the check valve 25 is configured to prevent a process byproduct in the exhaust line 11 from entering the first purge line 121 and polluting the first purge line 121.
In this embodiment, the first purge lines 121 are each further provided with an on-off valve 26 to control on and off of the first purge lines 121.
As shown in fig. 1, in the present embodiment, the exhaust apparatus further includes a pressure measuring line 17 and a pressure measuring cell 18, the pressure measuring line 17 is connected to the exhaust line 11, and the pressure measuring cell 18 is disposed on the pressure measuring line 17 for detecting the pressure in the pressure measuring line 17.
In the process, the pressure measuring pipeline 17 is in a communication state with the exhaust pipeline 11, and the exhaust pipeline 11 is in a communication state with the inside of the reaction chamber 10, so that the pressure in the pressure measuring pipeline 17 is the same as the pressure in the reaction chamber 10, and the pressure in the pressure measuring pipeline 17 is detected by the pressure measuring element 18 arranged on the pressure measuring pipeline 17, so that the pressure in the reaction chamber 10 can be measured, and the pressure in the reaction chamber 10 can be controlled.
In this embodiment, the pressure measuring pipeline 17 is further provided with an overpressure vent valve 27, and when the pressure in the pressure measuring pipeline 17 is higher than the process normal pressure, that is, the pressure in the reaction chamber 10 is higher than the process normal pressure, the overpressure vent valve 27 is opened, so that the higher partial pressure can be released, thereby preventing the pressure in the reaction chamber 10 from being too high, and improving the stability of the process result.
As shown in fig. 1, the exhaust apparatus further includes at least one second purge line 122, and the second purge line 122 is disposed between the heating line 13 and the pressure measurement line 17, and is used to transfer the purge gas heated by the heating line 13 into the pressure measurement line 17.
Since the pressure measuring line 17 is in communication with the exhaust line 11 during the process, the process by-products discharged from the reaction chamber 10 into the exhaust line 11 enter the pressure measuring line 17 through the exhaust line 11, this requires at least one second purge line 122 to be connected to the pressure measurement line 17, and by placing the second purge line 122 between the heating line 13 and the pressure measurement line 17, so as to transmit the purge gas heated by the heating line 13 into the pressure measuring line 17, to inhibit the formation of particles of the process by-products in the pressure measuring line 17, to prevent the process by-products from flowing back into the reaction chamber 10 through the pressure measuring line 17 and the exhaust line 11, therefore, the number of process by-product particles attached to the exhaust pipeline 11 in the process is reduced, the stability of the process result is improved, the maintenance period of the semiconductor processing equipment is prolonged, and the process efficiency of the semiconductor processing equipment is improved.
As shown in fig. 1, the exhaust device includes two second purging pipelines 122, and an air outlet of one of the second purging pipelines 122 is communicated with a head end of the pressure measuring pipeline 17, and an air outlet of the other second purging pipeline 122 is communicated with a tail end of the pressure measuring pipeline 17; and the two second purge lines 122 are provided with a check valve 25 and a flow meter 19. The flow meter 19 is configured to control a flow rate of the purge gas that can pass through the second purge line 122, and the check valve 25 is configured to prevent a process byproduct in the exhaust line 11 from entering the second purge line 122 and polluting the second purge line 122.
Since the head and tail ends of the pressure measurement line 17 have a small gas flow and a low temperature relative to the intermediate components, the process by-products introduced into the pressure measurement line 17 through the gas exhaust line 11 are generally accumulated at the head and tail ends of the pressure measurement line 17 and are easily formed into particles at the head and tail ends of the pressure measurement line 17. In the exhaust apparatus provided in this embodiment, the gas outlet of one second purging line 122 is communicated with the head end of the pressure measuring line 17, and the gas outlet of the other second purging line 122 is communicated with the tail end of the pressure measuring line 17, so that the purging gas heated by the heating line 13 is directly transmitted to the head end and the tail end of the pressure measuring line 17 through the two second purging lines 122, respectively, so as to inhibit the formation of particles of the process byproducts at the head end and the tail end of the pressure measuring line 17, and prevent the process byproducts from flowing back into the reaction chamber 10 through the pressure measuring line 17 and the exhaust line 11, thereby reducing the number of the particles of the process byproducts attached to the exhaust line 11 in the process, improving the stability of the process result, prolonging the maintenance period of the semiconductor processing equipment, and improving the process efficiency of the semiconductor.
In the present embodiment, the inner diameter of the exhaust line 11 is larger than the inner diameter of the pressure measurement line 17, and the flow rate of the purge gas that can pass through the first purge line 121, which is controlled by the flow meter 19 provided on the first purge line 121, is larger than the flow rate of the purge gas that can pass through the second purge line 122, which is controlled by the flow meter 19 provided on the second purge line 122. This is because the inner diameter of the exhaust line 11 is larger than that of the pressure measurement line 17, and therefore, the exhaust line 11 needs more purge gas to purge than the pressure measurement line 17, which requires that the flow rate of the purge gas that can pass through the first purge line 121, which is controlled by the flow meter 19 disposed on the first purge line 121, is larger than that of the purge gas that can pass through the second purge line 122, which is controlled by the flow meter 19 disposed on the second purge line 122, so that more purge gas can enter the exhaust line 11 through the first purge line 121 than can enter the pressure measurement line 17 through the second purge line 122.
In this embodiment, the second purge lines 122 are each further provided with an on-off valve 26, so as to control on/off of the second purge lines 122.
As shown in fig. 1, in the present embodiment, the exhaust line 11 includes a flexible pipe section 111 and a rigid pipe section 112, wherein both ends of the flexible pipe section 111 are respectively communicated with the reaction chamber 10 and the rigid pipe section 112, and the flexible pipe section 111 and the rigid pipe section 112 are respectively communicated with at least one first purge line 121.
In practical applications, since the process by-products exhausted from the exhaust pipe 11 have a relatively high temperature, the exhaust pipe 11 can be provided with the rigid pipe section 112 to make the exhaust pipe 11 have sufficient strength, so as to reduce the probability of damage to the exhaust pipe 11, however, since the footprint of the semiconductor processing equipment is generally large, in order to make the installation of the exhaust pipe 11 and the reaction chamber 10 to meet the requirements of the site, the installation direction of the rigid pipe section 112 can be arbitrarily changed to meet the requirements of the site by providing the flexible pipe section 111 between the rigid pipe section 112 and the reaction chamber 10 and making both ends of the flexible pipe section 111 respectively communicate with the reaction chamber 10 and the rigid pipe section 112 to connect the reaction chamber 10 and the rigid pipe section 112 through the flexible pipe section 111.
As shown in fig. 1, the flexible pipe section 111 and the rigid pipe section 112 are respectively communicated with a first purge line 121, and this design is that two ends of the flexible pipe section 111 are respectively communicated with the reaction chamber 10 and the rigid pipe section 112, and the process by-product discharged from the reaction chamber 10 will first pass through the flexible pipe section 111 and then enter the rigid pipe section 112, so that two first purge lines 121 are required to be respectively communicated with the flexible pipe section 111 and the rigid pipe section 112, so as to introduce the purge gas heated by the heating line 13 into the flexible pipe section 111 and the rigid pipe section 112 through the two first purge lines 121, so as to inhibit the process by-product from forming particles in the flexible pipe section 111 and the rigid pipe section 112, avoid the process by-product from flowing back into the reaction chamber 10 through the flexible pipe section 111 and the rigid pipe section 112, and thereby reduce the amount of the process by-product particles attached to the exhaust pipe 11 during the process, the stability of the process result is improved, the maintenance period of the semiconductor processing equipment is prolonged, and the process efficiency of the semiconductor processing equipment is improved.
However, in practical applications, the number of the first purge lines 121 respectively communicated with the flexible pipe section 111 and the rigid pipe section 112 is not limited to one, and the flexible pipe section 111 and the rigid pipe section 112 can be respectively communicated with a plurality of first purge lines 121 to improve the effect and efficiency of purging the flexible pipe section 111 and the rigid pipe section 112.
In this embodiment, since the flexible pipe section 111 is connected closer to the reaction chamber 10 than the rigid pipe section 112, the purge gas introduced into the flexible pipe section 111 needs to be able to enter the rigid pipe section 112 to purge the rigid pipe section 112, and therefore, the amount of the purge gas introduced into the flexible pipe section 111 needs to be larger than that of the purge gas introduced into the rigid pipe section 112. Therefore, in the present embodiment, it is preferable that the flow rate of the purge gas that can be passed through the first purge line 121 communicating with the flexible pipe section 111, which is controlled by the flow meter 19 provided on the first purge line 121 communicating with the flexible pipe section 111, is greater than the flow rate of the purge gas that can be passed through the first purge line 121 communicating with the rigid pipe section 112, which is controlled by the flow meter 19 provided on the first purge line 121 communicating with the rigid pipe section 112, so that the amount of the purge gas entering the flexible pipe section 111 can be greater than the amount of the purge gas entering the rigid pipe section 112.
As another technical solution, as shown in fig. 1, this embodiment further provides a semiconductor processing apparatus, which includes a reaction chamber 10 and an exhaust device, the exhaust device is connected to the reaction chamber 10 and is used for exhausting gas in the reaction chamber 10, and the exhaust device is the exhaust device provided in this embodiment.
The semiconductor processing equipment provided by the embodiment exhausts the gas in the reaction chamber 10 by the exhaust device of the semiconductor processing equipment provided by the embodiment, so that the number of process byproduct particles attached to the exhaust pipeline 11 in the process can be reduced, the stability of the process result is improved, the maintenance period of the semiconductor processing equipment is prolonged, and the process efficiency of the semiconductor processing equipment is improved.
In summary, the exhaust apparatus of the semiconductor processing equipment and the semiconductor processing equipment provided by the embodiment of the invention can reduce the amount of process byproduct particles attached to the exhaust pipeline 11 in the process, thereby improving the stability of the process result, prolonging the maintenance period of the semiconductor processing equipment, and improving the process efficiency of the semiconductor processing equipment.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (11)
1. An exhaust device of a semiconductor processing device, comprising an exhaust pipeline connected with a reaction chamber of the semiconductor processing device, and being characterized by further comprising a gas source, a heating pipeline and at least one first purging pipeline, wherein,
the gas source is used for providing purge gas;
the gas source and the first purging pipeline are both communicated with the heating pipeline, the heating pipeline is used for heating the purging gas passing through the heating pipeline to a preset temperature, and the preset temperature meets the temperature capable of enabling the process byproduct particles to form a gas state;
the first purge line is disposed between the heating line and the exhaust line, and is used for transmitting the purge gas heated by the heating line to the exhaust line.
2. The exhaust apparatus as claimed in claim 1, wherein the heating pipeline comprises a first inner layer pipeline and a first outer layer pipeline, the first outer layer pipeline is sleeved around the first inner layer pipeline, a heating element is arranged between the first inner layer pipeline and the first outer layer pipeline, and the gas source and the first purge pipeline are both communicated with the first inner layer pipeline.
3. An exhaust apparatus as claimed in claim 2, wherein the heating element comprises a heating wire wrapped around the first inner layer conduit.
4. An exhaust apparatus as claimed in claim 3, further comprising cooling means disposed about the first outer pipe for cooling the pipe wall of the first outer pipe.
5. The exhaust device according to claim 2, wherein a temperature control element is disposed in the first inner-layer pipeline, and the temperature control element is electrically connected to the heating element, and is configured to detect a real-time temperature of the purge gas in the first inner-layer pipeline, and control a heating temperature of the heating element according to the real-time temperature so as to reach the preset temperature.
6. The exhaust apparatus as claimed in claim 1, wherein a check valve and a flow meter are provided on each of the first purge pipes.
7. The exhaust apparatus according to claim 1, further comprising a pressure measurement line connected to the exhaust line and a pressure measurement cell disposed on the pressure measurement line for detecting a pressure in the pressure measurement line.
8. An exhaust apparatus as claimed in claim 7, further comprising at least one second purge line disposed between the heating line and the pressure measurement line for conveying the purge gas heated by the heating line into the pressure measurement line.
9. The exhaust device according to claim 8, wherein the exhaust device comprises two second purging pipelines, and the gas outlet of one of the second purging pipelines is communicated with the head end of the pressure measuring pipeline, and the gas outlet of the other second purging pipeline is communicated with the tail end of the pressure measuring pipeline;
and two second purging pipelines are provided with a one-way valve and a flowmeter.
10. The exhaust apparatus as claimed in claim 1, wherein the exhaust line comprises a flexible pipe section and a rigid pipe section, wherein both ends of the flexible pipe section are respectively communicated with the reaction chamber and the rigid pipe section, and the flexible pipe section and the rigid pipe section are respectively communicated with at least one first purge line.
11. A semiconductor processing apparatus comprising a reaction chamber and an exhaust device connected to the reaction chamber for exhausting gas in the reaction chamber, wherein the exhaust device is the exhaust device as claimed in any one of claims 1 to 10.
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| CN111933556A (en) * | 2020-09-22 | 2020-11-13 | 南京莉上网络科技有限公司 | Semiconductor chip manufacturing substrate processing equipment |
| CN112323042A (en) * | 2020-10-26 | 2021-02-05 | 北京北方华创微电子装备有限公司 | Air extractor, semiconductor process equipment and control method of air extractor |
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| CN113390557A (en) * | 2021-06-18 | 2021-09-14 | 湖南苍树航天科技有限公司 | Novel purging flow channel structure and pressure measuring instrument |
| CN113430501A (en) * | 2021-06-18 | 2021-09-24 | 长江先进存储产业创新中心有限责任公司 | Thin film deposition apparatus and thin film deposition method |
| CN114588762A (en) * | 2020-12-03 | 2022-06-07 | 中国科学院微电子研究所 | Semiconductor processing equipment exhaust device and method |
| CN115595559A (en) * | 2022-10-27 | 2023-01-13 | 拓荆科技股份有限公司（Cn） | Multi-chamber semiconductor equipment |
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